200832581 九、發明說明·· 【發明所屬之技術領域】 本發明是有關於一種偵測方法與量測器，特別是指一 種多孔隙超低介電質材料即時損害㈣方法與量測器。 【先前技術】 在積體電路製造中，隨著元件尺寸不斷的縮小，電阻一 電容遲滯效應（R-C delay)也曰益嚴重，在9〇奈米之後的後 段製程’已經到了不得不引進多孔隙超低介電質材料 二⑽us LoW-k material)來降低電容與遲滯效應。然而，在 刚述後段製程中，有許多製程步驟會對多孔隙超低介電質 材料造成損壞，例如在電漿沈積介電質保護層（cap)蝕刻 、光阻灰化(Ash)、原子層級（ALD)方式沈積銅擴散阻 障層（Copper Diffusion Barrier)或是沈積銅線上方之介電質 阻障層（Dielectric Barrier).··等製程，在這些製程中，反應 氣體或先驅物（Precursor)都可能會滲透進多孔隙超低介電質 2料中，*造成超低介電質材料損壞（Damage)，使得介電 質材料之電容值（亦即介電係數）升高，進而又造成延遲 效應。 但因在製程過程中，造成多孔隙超低介電質材料損壞 的因素很複雜，氣體、電漿、洗驅物、水氣等都是損壞原 因，難以判定其個別影響以解決問題。傳統上，若要了解 多孔隙超低介電質材料的損害，是在完成所有製程步驟之 ?才測量多孔隙超低介電質材料製程之薄膜的總體介電 爷數（K effective Value)或電容值，當發現多孔隙低介電質 200832581 材料損壞後’亦即介電常數值電 的去嘗試尋找哪—道製程損壞了材料=，才後知後覺 製程對多孔隙介2: 製程影響’而找不出個別 了夕札隙介電材料的破壞力， 方法，無形中也增加了研發的時間與成本易有效的想出改進 【發明内容】 f 哪：氣之目的，即在提供—種可用_偵測 害體或先驅物會對多孔隙超低介電質刪 本發明之再—目的，在於提供一 俛測哪些製程氣體或先驅物，會對 述量測器預先 造成損害的價測方法。 對鹰超低介電質材料 ，包=2 =孔：?介電質材料即時損害量測器 被覆固定於第一二孔隙超低介電麵製成且 門p妯” 緣層’及一與第-導電層相 間^地被覆固定於絕緣層上之第二導電層。 質材^宝7明以上述量測器即時痛測多孔隙超低介電 貝材料害的方法，包含以下步驟：⑴在—已知條件 Γ環量測紀錄該量測器之電容值，·⑴將步驟⑷之 里心置於—充滿製程氣體及/或先驅物之製程環境中；及 一驟⑴之製程壞境中即時量測該量测器隨時間變 化之電容值。 π ^ 【實施方式】 有關本毛明之則述及其他技術内容、特點與功效，在 6 200832581 以下配合參考圖式之一個較佳 清楚的呈現。 實施例的詳細說明中 將可 旦、/ 1所不，本發明多孔隙超低介電質材料即時損害 里測态之較佳實施例，適用於Μ ,、ρι丨夕a旭、 、α 、用於預測多孔隙超低介電質材料200832581 IX. INSTRUCTION DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a detection method and a measuring device, and more particularly to a method and a measuring device for instantaneous damage (4) of a porous ultra-low dielectric material. [Prior Art] In the fabrication of integrated circuits, as the size of components continues to shrink, the resistance-capacitance hysteresis effect (RC delay) is also very serious. After the 9-inch nanometer, the post-process has been introduced to have to introduce multi-porosity. Ultra-low dielectric material (2)us LoW-k material) to reduce capacitance and hysteresis. However, in the latter stage of the process, there are many process steps that can cause damage to the porous ultra-low dielectric material, such as plasma deposition of dielectric cap (cap) etching, photoresist ashing (Ash), and atomic Layer-by-layer (ALD) deposition of a copper diffusion barrier (Copper Diffusion Barrier) or deposition of a dielectric barrier (Dielectric Barrier) above the copper wire, etc., in these processes, reactive gases or precursors ( Precursor) may penetrate into the porous ultra-low dielectric material, causing damage to the ultra-low dielectric material, causing the capacitance value (ie, dielectric constant) of the dielectric material to rise. It also causes a delay effect. However, due to the complexity of the damage caused by the porous ultra-low dielectric material during the process, gas, plasma, washing, water and gas are all causes of damage, and it is difficult to determine the individual influence to solve the problem. Traditionally, to understand the damage of porous ultra-low dielectric materials, it is the K effective Value of the film that measures the process of the porous ultra-low dielectric material process after all the process steps are completed. Capacitance value, when it is found that the porous low dielectric 200832581 material is damaged, that is, the dielectric constant value is used to find out which process has damaged the material =, then the process is known to the porous layer 2: process influence 'And can not find the destructive power of individual dielectric materials, the method, invisibly increases the time and cost of research and development, and effectively thinks about improvement. [Inventive content] f Which: the purpose of gas, that is, is provided - A useful _detection of a poison or precursor to delete a porous ultra-low dielectric. The purpose of the invention is to provide a measure of which process gases or precursors will prematurely damage the meter. Test method. For Eagle ultra-low dielectric material, package = 2 = hole: ? dielectric material instant damage measuring device is coated and fixed on the first two-pore ultra-low dielectric surface and the gate p妯 "edge layer" and one The first conductive layer is coated on the second conductive layer fixed on the insulating layer. The material is characterized by the above-mentioned measuring device for instantly measuring the damage of the porous ultra-low dielectric shell material, and comprises the following steps: (1) Recording the capacitance value of the measuring device in a known condition, (1) placing the center of step (4) in the process environment of the process gas and/or precursor; and the process of the process of (1) Instantly measure the capacitance value of the measuring device with time. π ^ [Embodiment] For the description of the other technical contents, features and effects of this document, a better and clearer reference to the reference pattern below 6 200832581 In the detailed description of the embodiments, the preferred embodiments of the porous ultra-low dielectric material of the present invention are immediately applicable to the measurement state, and are applicable to Μ, ρι丨夕 a,, α, used to predict porous ultra-low dielectric materials
(圖未不）在積體電路實際製程條件下，受各製程中之每 一種氣體、電漿、先驅物、水氣...的損害程度。該量測器3 包含一第一導電層31、-沉積被覆於第-導電層31頂面之 絕緣層32’及一沉積被覆於絕緣層32頂面之第二導電層 33，而構成『導電層_絕緣層-導電層』結構。 " 該第一導電層31是由半導體材料製成，例如矽基板。 該絕緣層32是由有連結性多孔隙超低介電質材料製成，例 如JSR公司之產品編號為LKD51〇9的產品，且具有多數才歹目 互連結性之孔隙320。該第二導電層33則是由導電金屬材 料製成，例如鈕/氮化鈕（Ta/TaN)或鋁（A1)。且上述層大 導電層31、33與絕緣層32相配合構成一『丰邋 午V體-絕緣體- 金屬』結構的量測器3。 但實施時’第一導電層3i亦可以由導電金屬材料製成 ，而使該量測器3變成『金屬-絕緣體_金屬』結構，且1等 導電層31、33與絕緣層32之材質皆不以上述為限。^無 施例之量測器3的該等層狀結構是藉由沉積方式製成，= 因製作方式相當多，且非本發明之創作重點，田 4 u此不再詳 述0 配合圖2、3，以下則繼續說明以本發明景。 奴η里刿态3即時 地债測多孔隙超低介電質材料受製程氣體或先驅物損害的 200832581 方法，該方法依序包含以下步驟： / ^ ( $測該量測器3之基準電容。將 置於一已知條件之預設環境他中，本實施例為真空_:境 ，並將一電容量測梦f 5夕-邋括e 第-導電声： *線51分別電連接於第-與 弟广電！ 31、33，以該電容量測裝置5量測該量測器3 在名預叹%“兄4〇1中的整體電容值（或介電係數)，並以該 電容值（或介電係數）作為參考標準值。 步驟(二）量測該量測器3於製程環境中之電容值。 於該預設環境4 0〗, _ 卜充真預疋使用之單-種或多種相混 。 或先驅物，並使該環境處於-製程壓力與溫度 條件下’而構成—製程環境術’同時以該電容量測褒置5 即時地偵測該量測哭3名备卩士卩,# 3在母一蚪間之整體電容（或介電係 數）受化。且實施時，亦可於在該製程觀術中加入電 漿，並偵測在有無電襞情況下，量測器3 <整體電容變化 *所偵測到之量測器3電容值（或介電係數）比彔考 標準值大時’便表示在該製程壓力或電漿條件下，困於多 ㈣超低介電質材料製成之絕緣層32的孔隙32〇中的製程 氣體或先驅物，已損壞該絕緣層32。 因此’可藉由該量測器3之電容值變化情況，得知單 一種或多種相混合之製程氣體及/或先驅物，在每一時間對 多隙超低介電質材料的破壞程度，所以可更快❹直接地 預測多孔隙超低介電質材料在實際積體電路製程環境術 中可月&遭文製程氣體、先驅物或電聚破壞的情況。 200832581 a 3外’該量測S 3除了可用於實際製程前的各種製程 ^與先驅物之預先測試外，亦可將該量測器3應用於實 驅物產製私中用以即時監控各個製程所使用之氣體或先 ^勿’對積體電路所採用之多孔隙超低介電質材料的破壞 滑況’以避免突發情況發生。 歸納上述’透過該量測器3之該等導電層Η、”與絕 32所構成之『半導體'絕緣體_金屬』或『金屬'絕緣體_ :材二結！的設計:广及該絕緣層32即為多孔隙超低介電 二设計’可藉由預先偵測該量測器3在積體電路製 二=:整體電容值變化，而事先預測與評估出多孔隙 破材料在實際製程中’可能受製程氣體或先驅物 八二王又’且^早—種或多種混合的氣體及/或先驅物 ^判斷多孔隙超低介電質材料之損壞程度，進而可方便 善選擇更好的製程用氣體或先驅物，除了有助於改 。王’避免或降低積體電路損壞率外’還可節省晶片研 ，成本、縮短研發時間m來即㈣ 防止具大損失。因此，確實可以逹到本發明之目的 不处！·隹以上所述者，僅為本發明之一較佳實施例而已，當 :咖說明_作之簡單:= 仍屬本發明專利涵蓋之範圍内。 、七飾白 【圖式簡單說明】 之一較佳實施例的結構示意圖； 200832581 圖2Λ以1容量測裝置量測該較佳實施例於-已知 條件之預a又％境中之電容值的示意圖；及 、，圖3是類似圖2之視圖，說明該較佳實施例置於一充 滿製程氣體或先驅物之製程環境中進行電容值量測的情況 η 10 200832581 【主要元件符號說明】 3 ....... ...量測器 401 .... …預設環境 31...... …第一導電層 402 .... ...製程環境 32...... 5 …··.. ...電容量測裝置 320.... ...孔隙 51...... ...導線 33...... …第二導電層(Figure is not) under the actual process conditions of the integrated circuit, the degree of damage to each of the gases, plasma, precursors, water and gas in each process. The measuring device 3 includes a first conductive layer 31, an insulating layer 32' deposited on the top surface of the first conductive layer 31, and a second conductive layer 33 deposited on the top surface of the insulating layer 32 to form a conductive Layer_insulating layer-conductive layer structure. " The first conductive layer 31 is made of a semiconductor material, such as a germanium substrate. The insulating layer 32 is made of a bonded porous ultra-low dielectric material such as that of JSR Corporation under the product number LKD51〇9, and has a plurality of pores 320 which are interconnected. The second conductive layer 33 is made of a conductive metal material such as a button/nitride button (Ta/TaN) or aluminum (A1). Further, the above-mentioned large-layer conductive layers 31, 33 and the insulating layer 32 are combined to form a measuring device 3 of a "Fengwuwu V-insulator-metal" structure. However, when implemented, the first conductive layer 3i may also be made of a conductive metal material, and the measuring device 3 is changed to a "metal-insulator-metal" structure, and the materials of the first conductive layers 31, 33 and the insulating layer 32 are Not limited to the above. ^The layered structure of the measuring device 3 without the embodiment is made by deposition method, = because the production method is quite large, and the focus of the invention is not the focus of the invention, the field is no longer detailed 0 3, the following continues to illustrate the present invention. The method of 200832581, which measures the damage of porous gas or precursor material, is described in the following steps: / ^ (Measure the reference capacitance of the measuring device 3) It will be placed in a preset environment of a known condition, this embodiment is a vacuum _: environment, and a capacitance measurement dream 5 - 邋 e - first conductive sound: * line 51 is electrically connected to The first and the brothers and televisions! 31, 33, the capacitance measuring device 5 measures the overall capacitance value (or dielectric coefficient) of the measuring device 3 in the name pre-sighing "" brother 4〇1, and The capacitance value (or dielectric coefficient) is used as the reference standard value. Step (2) Measure the capacitance value of the measuring device 3 in the process environment. In the preset environment 4 0〗, _ 卜 充 真 疋- or a mixture of precursors or precursors, and the environment is under - process pressure and temperature conditions - and constitute - process environment technology - while using the capacitance measurement device 5 to immediately detect the measurement of crying 3备卩士卩, #3 The total capacitance (or dielectric coefficient) between the mother and the mother is normalized, and when implemented, it can also be added to the process. Slurry, and detect that in the presence or absence of power, the measuring device 3 < global capacitance change * detected by the measuring device 3 capacitance value (or dielectric coefficient) is greater than the reference standard value Under the process pressure or plasma condition, the process gas or precursor trapped in the pores 32 of the insulating layer 32 made of the (4) ultra-low dielectric material has damaged the insulating layer 32. Therefore, The change of the capacitance value of the measuring device 3, and the degree of damage to the multi-gap ultra-low dielectric material at each time by the process gas and/or the precursor of the single or multiple mixed process gases, so that the damage can be made more quickly and directly It is predicted that the porous ultra-low dielectric material can be destroyed by the process gas, precursor or electropolymer in the actual integrated circuit process environment. 200832581 a 3 External 'The measurement S 3 can be used in addition to the actual In addition to the pre-test of the precursors and the pre-test of the precursors, the measuring device 3 can also be applied to the actual production of the gas to be used for real-time monitoring of the gases used in each process or the first circuit. Destructive slippage of porous ultra-low dielectric materials 'To avoid sudden occurrences. Summarize the above-mentioned 'semiconductor's insulators through the measuring device 3', and the "semiconductor's insulator_metal" or "metal" insulator _: Design: The insulating layer 32 is a porous ultra-low dielectric two design' can be predicted and evaluated in advance by detecting the measuring device 3 in the integrated circuit 2: the overall capacitance value changes. In the actual process, the porous material may be judged to be damaged by the gas or the precursor of the process gas or the precursor of the gas and/or the precursor of the porous or low-dielectric material. In addition, it is convenient to choose a better process gas or precursor, in addition to help to change. Wang 'avoid or reduce the damage rate of integrated circuit' can also save wafer research, cost, shorten development time m (4) Great loss. Therefore, it is indeed possible to achieve the purpose of the present invention. The above description is only a preferred embodiment of the present invention, and it is still within the scope of the present invention. , seven ornaments white [schematic description of the drawings] a schematic diagram of a preferred embodiment; 200832581 Figure 2 Λ measured by a 1 capacity measuring device in the pre-a and % of the known conditions 3, and FIG. 3 is a view similar to FIG. 2, illustrating the case where the preferred embodiment is placed in a process environment filled with a process gas or a precursor for capacitance measurement η 10 200832581 [Description of main component symbols] 3 ....... ...measuring device 401 .... ...preset environment 31 ... ... first conductive layer 402 .... ... process environment 32.... . . 5 ...··.. ...capacitance measuring device 320.... aperture 51 ... ... wire 33 ... ... second conductive layer
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