200832016 九、發明說明 【發明所屬之技術領域】 本發明係關於發光裝置及面發光裝置,詳細而言,係 關於包含固體發光元件所構成之發光裝置等。 【先前技術】 近年來,例如於以液晶電視或液晶顯示器爲代表之液 晶顯不裝置等的顯示裝置中,爲了從顯示面板的背面或側 面等照射光線,係採用背光裝置作爲發光裝置。此背光裝 置係存在有端面光(側光)型式者,係於透明樹脂製之導 光板的兩邊或單邊設置光源,且藉由設置於導光板的內面 之反射部,將入射於導光板的光予以反射而照射至液晶面 板面。 此類的背光裝置,一般係使用熱陰極型或冷陰極型等 的螢光管。另一方面,作爲取代此類採用螢光管之背光裝 置者,近年來對於使用固體發光元件的一種之發光二極體 (LED : Light Emitting Diode )以作爲光源之背光裝置的 技術開發,乃積極的進行中。 使用發光二極體之側光型的背光裝置,爲人所知者有 ,將於基板上安裝有多數個發光二極體而成之光源,配置 於導光板的一側面者(例如參照專利文獻1 )。此外,爲 人所知者有,將於基板上裝設有多數個發光元件而成之發 光元件陣列模組,配置於以彎折方式形成有第1側壁、第 2側壁及底壁之金屬板的底壁,於此金屬板之第1側壁及 -4- 200832016 第2側壁形成反射板者(例如參照專利文獻2 )。 〔專利文獻1〕日本特開平6-3527號公報 〔專利文獻2〕曰本特開2006-310221號公報 【發明內容】 (發明所欲解決之課題) 於上述背光裝置中,係於基板上形成有用以連接各發 光二極體及電源之配線。尤其是,最近爲了因應顯示面板 的大型化及高畫質化之要求,係逐漸增加安裝於基板之發 光二極體的數目,而導致形成於基板之配線的數目隨著此 增加量而增加。一旦形成於基板之配線的數目增加,則會 使配線的佈線所需面積亦隨著增大。在此,用以增大配線 的佈線所需面積之手法,例如有擴大基板本身的面積,或 是增加基板中之配線的層數。 然而,例如於使用前者的手法時,基板的寬度,亦即 背光裝置之垂直於顯示面板的面之方向上的厚度增加,結 果使顯币裝置的厚度亦跟著增加。另一方面,例如於使用 後者的手法時,的確不易產生前者的問題,但配線層數的 增加亦會導致基板之製造成本的上升。 本發明係以上述技術爲背景而創作出之發明,目的在 於達成具備固體發光元件之發光裝置的薄型化。 (用以解決課題之手段) 根據該目的,適用本發明之發光裝置係包含:具有凹 -5- 200832016 狀剖面且形成有配線之配線基板;及直接安裝於配線基板 的凹部內側,且連接於配線之固體發光元件;及形成於配 線基板的凹部內側,且將從固體發光元件所射出的光予以 反射之反射構件。 於此發光裝置中,其特徵爲更包含,設置於配線基板 的凹部內側,且用以保護固體發光元件之保護構件。此外 ,其特徵爲配線基板爲彎曲。 此外,從其他觀點來看,本發明爲包含:使從側面所 入射的光往上面側射出之導光板;及從導光板的側面將光 照射至導光板之光源之面發光裝置,其特徵爲光源係具備 =沿著導光板的側面配列有多數個之固體發光元件;及具 有使與導光板的側面之對向部成爲山谷之方式地彎曲形成 之凹部,將多數個固體發光元件直接安裝於該凹部的內側 ,且具備用以對多數個該固體發光元件進行供電之配線之 基板;設置於基板上所形成之凹部的內側,且將從多數個 固體發光元件所射出的光,朝向導光板反射之反射層。 於此面發光裝置中,其特徵爲基板係具備:直接安裝 有多數個固體發光元件之基部;從基部的一端部側朝向導 光板的側面突出之第1側壁;及從基部的另一端部側朝向 導光板的側面突出之第2側壁;反射層係形成於第1側壁 及第2側壁。此外,其特徵爲基板係具備:直接安裝有多 數個固體發光元件之基部;從基部的一端部側朝向導光板 的側面突出之第1側壁;及從基部的另一端部側朝向導光 板的側面突出之第2側壁;將第2側壁的突出長度設定爲 -6 - 200832016 較第1側壁還大;於基邰及第2側壁形成配線,且不於第 1側壁形成配線。再者,其特徵爲多數個固體發光元件, 係由依下列順序配列有射出紅色光之紅色發光元件、射出 綠色光之綠色發光元件、及射出藍色光之藍色發光元件者 所構成。此外,其特徵爲配線係於每1個系統中對2個以 上的固體發光元件進行供電。再者,其特徵爲1個系統中 之由配線所供電之2個以上的固體發光元件,彼此未鄰接 。此外,其特徵爲配線係藉由組合串聯連接及並聯連接而 對多數個固體發光元件進行供電。 發明之效果: 根據本發明,可達成具備固體發光元件之發光裝置的 薄型化。 【實施方式】 以下係參照附加圖式,詳細說明用以實施本發明之最 佳型態(以下稱爲實施型態)。 第1圖係顯示適用本實施型態之液晶顯示裝置的全體 構成之圖式。適用本實施型態之液晶顯示裝置,係具備: 液晶顯示模組5 0 ;及設置於此液晶顯示模組5 0的背面側 (於第1圖中爲下部側)之背光裝置1 0。於本實施型態中 ,係使用側端面型的背光裝置1 0。 作爲面發光裝置之背光裝置1 〇係具備:發光模組1 1 ;導光板12 ;反射板1 3 ;擴散板14 ;稜鏡薄片:[5、16 ; 200832016 及亮度提升膜片1 7。 發光裝置或作爲光源之發光模組1 1,係對向配置於導 光板12之一邊(長邊)的側面。於本實施型態中,發光 模組1 1係配列有多數個射出紅(R )、綠(G )、藍(B )的各色光之LED晶片而構成。發光模組1 1的構成將於 之後詳細說明。 導光板1 2係具有對應於液晶面板5 1之長方形狀,且 例如由具有優良的光透射性之丙烯酸樹脂等所構成。於此 導光板1 2與液晶顯示模組5 0之對向面的相反面上,形成 有由凹凸或白色油墨等所構成之反射點(於圖示中均未顯 示)。 反射板1 3係密接地配置於導光板1 2的點形成面側。 此反射板1 3係由具有白色或金屬光澤之板(或膜片)所 構成。 擴散板1 4係密接地配置於導光板1 2之與反射板1 3 爲相反側的面。此擴散板1 4例如爲以光學膜片的層積體 所構成之板(或膜片)。 稜鏡薄片1 5、1 6係設置於反射板1 3的上部(接近於 液晶顯示模組5 0之一側)。此稜鏡薄片1 5、1 6係由具有 互呈直交的方向之繞射光柵膜片所構成。 亮度提升膜片17例如由具有偏光分離功能之PCF( Polafization Conversion Film :偏極轉換膜片)所構成。 另一方面,液晶顯示模組5 0係具備:以2片的玻璃 基板夾介液晶所構成之作爲顯示面板的一種之液晶面板5 1 -8- 200832016 ;及層積於此液晶面板5 1的各片玻璃基板,且將光波的 振動限制於某方向之偏光板5 2、5 3。此外,於液晶顯示裝 置中,亦裝設有圖中未顯示之驅動用L S I等周邊構件。 液晶面板5 1係包含圖中未顯示的各種構成要素而構 成。例如,於2片的玻璃基板中,係具有圖中未顯示的顯 不電極、薄膜電晶體(TFT: Thin Film Transistor)等之 主動元件、液晶、間隔材、密封劑、配向膜、共通電極、 保護膜、及彩色濾光片等。 背光裝置1 〇的構成單位可任意選擇。例如,亦有僅 將發光模組1 1及導光板1 2之單位稱爲「背光裝置(背光 )」,而構成一種不含反射板1 3、擴散板1 4、稜鏡薄片 15、16、及亮度提升膜片17等之光學補償薄片的層積體 之流通形態。 接著說明此背光裝置1 〇的動作。 於發光模組1 1中將RGB的各色LED晶片予以點燈, 則從各LED晶片所射出之RGB的各色光,係從導光板12 的一側面入射。如此,於導光板12中,係利用構成導光 板12之材料(例如丙烯酸樹脂)的全反射,將從發光模 組1 1被導引至導光板12內之光,導引至導光板12的全 面。此時,照射在導光板1 2的內面側所設置的反射點之 光,會改變其行進路徑,使成爲較全反射角更小的角度之 光線,從導光板12的表面(擴散板14側的面)射出。此 外,未照射在導光板1 2的反射點之光,係於反射板1 3產 生反射,再於導光板12的表面產生反射。藉由重覆此過 -9 - 200832016 程,係從導光板12的表面中,涵蓋全面而射出幾乎呈均 一的光。於此之間,RGB的各色光係形成混色而作爲白色 光射出。 如此從導光板1 2的表面所射出之光,係於擴散板1 4 產生散射·擴散,而在更達到均一化之狀態下射出。之後 ,從擴散板1 4所射出之光,係藉由稜鏡薄片1 5、1 6而朝 向前方,亦即朝向亮度提升膜片1 7 (液晶顯示模組5 0 ) 聚光。然後,從稜鏡薄片1 6所射出之光,係藉由亮度提 升膜片1 7產生偏光分離,藉此,於亮度被提升之狀態下 朝向液晶顯示模組5 0射出。因此,於液晶顯示模組5 0中 ,係入射有,形成充分的混色達到白色化且該強度涵蓋全 面達到均一化,並且該亮度涵蓋全面而更爲提升之光。 以下係詳細說明上述背光裝置1 〇中所使用之發光模 組1 1。 第2圖(a )係顯示發光模組1 1的構成之立體圖。此 發光模組1 1係具備,裝載LED晶之發光裝置21以及支 撐發光裝置21之支撐構件22。此外,第2圖(b)係顯示 將發光模組1 1分解爲發光裝置2 1及支撐構件22之狀態 〇 發光裝置2 1係具備配線基板3 0。於本實施型態中, 配線基板3 0係具有彎曲爲凹字狀之構造。因此,配線基 板3 0係具備:成爲所形成之凹部的底部之基部3 0a ;從基 部3 0 a的一端幾乎呈直角地突出之第1側壁3 0 b ;及從基 部3 0 a的另一端幾乎呈直角地突出之第2側壁3 0 c。在此 -10- 200832016 ,係將第2側壁3 0c的突出長度設定爲較第1側壁3 Ob的 突出長度還大。 此外,於配線基板3 0上所形成之凹部內側的基部3 0 a ,係沿著長邊方向配置有多數個圖中未顯示的LED晶片 ,用以保護這些LED晶片之透鏡3 3,係以塡入於配線基 板3 0的凹部之方式地形成。這些的詳細構造將於之後詳 述。 另一方面,爲了使配線基板3 0嵌入而保持,支撐構 件22係與配線基板3 0相同,具有彎曲爲凹字狀之構造。 因此,支撐構件22係具備:所形成之凹部的底部22a ;從 底部22a的一端往直角方向突出之第1側部22b ;及從底 部22a的另一端往與第1側部22b爲相同方向突出之第2 側部22c。在此,係將第2側部22c的突出長度設定爲較 第1側部22b的突出長度還大。此支撐構件22例如可由 不銹鋼等的金屬板所構成。 在此,設置於發光裝置21的配線基板3 0之第1側壁 3 0b的突出長度,係設定爲較設置於支撐構件22之第1側 部2 2b的突出長度還小。另一方面,設置於發光裝置21 的配線基板30之第2側壁30c的突出長度,係設定爲較 設置於支撐構件22之第2側部22c的突出長度還大。 因此,於以支撐構件22支撐發光裝置2 1之狀態下, 第1側部22b較第1側壁30b更突出,且第2側壁30c較 第2側部22c更突出。此外,於第2側壁30c之突出部的 下側(外側),設置有之後所述之對配線基板3 0進行供 -11 - 200832016 電之連接器墊。 第3圖係顯示發光裝置21的構成之圖式。在此,第3 圖(a )係顯示從第1圖所示的導光板1 2側觀看發光裝置 2 1之正視圖,第3圖(b )係顯示第3圖(a )的要部擴大 圖,第3圖(c)係顯示第3圖(b)之IIIC-IIIC剖面圖 〇 發光裝置21係以配線基板30、多數個LED晶片31 、透鏡3 3、及光阻層3 4,構成該主要部分。 配線基板3 0,係由例如以玻璃布基材環氧樹脂爲主體 之所謂的玻璃環氧基板所構成。除了玻璃環氧基板之外, 亦可使用例如具有可透性且可進行彎曲加工之可撓性印刷 電路基板(FPC : Flexible Printed Circuit)。此配線基板 3 0係具備用以對各LED晶片3 1進行供電之配線(圖中未 顯示)。於本實施型態中,係使用於配線基板3 0的雙面 上形成有配線之所謂的雙層基板。關於形成於配線基板3 0 之配線的詳細內容,將於之後詳述。 具有固體發光元件的功能之多數個LED晶片3 1,係 以直線狀直接安裝於配線基板30的凹部內側之基部30a 上。於本實施型態中,係於基部3 0 a上裝設有合計爲4 2 個LED晶片31。42個LED晶片31,係由作爲發出紅色 光的紅色發光元件之紅色L E D晶片R 1〜R 1 4、作爲發出綠 色光的綠色發光元件之綠色LED晶片G1〜G14、及作爲發 出藍色光的藍色發光元件之藍色LED晶片B1〜B14所構成 。各LED晶片3 1係依紅、綠、藍的順序,具體而言爲R1 -12- 200832016 、G1 、 B1 、 R2 、 G2 、 B2 、…、R14 、 G14 、 B14 的順 列。 此外,於配線基板3 0的凹部內側之基部3 0a ’係 別藉由2個而包夾各LED晶片31之方式地形成有合 84個電極墊32。各LED晶片3 1,係分別透過焊接線 連接於位於該兩端之電極墊3 2。此外,係透過形成於 基板3 0之配線,對各電極墊3 2進行供電。 具有保護構件的功能之透鏡3 3,係具備密封部3 透鏡部33b。透鏡33除了保護各LED晶片31之外, 具有可將從所對應的LED晶片31所射出之光,有效 幾乎呈均一地導引至第1圖所示的導光板1 2之功能。 在此,密封部3 3 a係以埋入彎曲加工後之配線基 的凹部之方式,亦即以與配線基板3 0的凹部內面接 方式地形成。此外,透鏡部3 3 b係以半圓狀形成於密 33a上。於本實施型態中,由於多數個LED晶片31 爲直線狀,因此密封部3 3 a全體係具有四角柱狀的形 透鏡部3 3 b全體具有半圓柱狀的形狀。此外,這些密 3 3 a及透鏡部3 3 b對於紅、綠、藍的各色光,具有幾 透明之光透射功能。 光阻層3 4係形成於配線基板3 0的雙面。惟光阻 並未形成於配線基板30的基部30a中安裝有LED晶 之位置及設置有電極墊3 2之位置等。此光阻層3 4係 配線基板3 0的雙面上所形成之配線及基板。此外, 層3 4當中形成於配線基板3 0的凹部內側者,亦具有 序排 :以分 計爲 :電性 配線 3a及 並且 率且 板30 觸之 封部 配列 狀, 封部 乎爲 層34 片31 保護 光阻 將從 -13- 200832016 LED晶片31所射出的光予以反射之反射構件或反射層之 功能。 第4圖係顯示形成於配線基板3 0之配線圖案之圖式 。在此,第4圖(a )係顯示安裝有LED晶片3 1之配線基 板30的表面之配線圖案之圖式。第4圖(b)係顯示與表 面爲相反側之配線基板3 0的內面之配線圖案之圖式。第4 圖爲表示出於配線基板3 0進行彎曲加工或光阻層3 4的形 成之前的狀態。 如第4圖(a )所示般,於配線基板3 0的表面側形成 有表面配線3 5。於本實施型態中,表面配線3 5,係形成 於配線基板30的表面當中去除第1側壁30b後的基部30a 及第2側壁3 0c。於第4圖(a )所示之配線基板3 0中, 單點虛線爲之後進行彎曲加工(谷彎曲)之部位。 另一方面,如第4圖(b )所示般,於配線基板3 0的 內面側形成有內面配線3 6。於本實施型態中,內面配線 3 6,係形成於配線基板3 0的內面當中去除基部3 0a及第1 側壁30b後的第2側壁30c。因此,於配線基板30的第1 側壁3 Ob,均未形成表面配線3 5及內面配線3 6。於第4 圖(b )所示之配線基板3 0中,虛線爲之後進行彎曲加工 (山彎曲)之部位。 表面配線3 5及內面配線3 6係經由配線基板3 0上所 貫通形成之通孔而電性連接。 此外,於配線基板3 0的內面,係經由表面配線3 5及 內面配線36而設置有用以對各LED晶片31進行供電之 -14 - 200832016 第1連接器墊37及第2連接器墊38。在此,第丨連接 墊37係連接於電源。另一方面,第2連接器墊38爲接 。於第1連接器墊3 7及第2連接器墊3 8,係分別形成 2 1個電極墊,各電極墊係經由配線基板3 0上所貫通形 之通孔,而與表面配線3 5電性連接。 此第1連接器墊37及第2連接器墊38,於具有第 圖所示的配線基板3 0之發光裝置2 1被安裝於支撐構件 時,係配置於較第2側部22c更爲突出之位置上。藉此 可容易對配線基板3 0進行供電。 第5圖係顯示用以說明根據形成於配線基板3 0之 線圖案的供電系統之圖式。第1連接器墊3 7係具備2 1 電極墊37a〜37u。此外,第2連接器墊38係具備21個 極墊38a〜38uo 於本實施型態中,係使用2 1個系統的供電線將合 爲42個LED晶片31予以連接。因此,1個系統的供電 係分別連接於2個L E D晶片3 1。亦即,於此供電系統 ,爲串聯連接的2個LED晶片3 1,係並聯連接有21個 例如,設置於第1連接器墊37之電極墊37a,係經由紅 LED晶片R1及R8而連接於第2連接器墊38上所設置 電極墊3 8 a。此外,例如設置於第1連接器墊3 7之電極 3 7b,係經由綠色LED晶片G1及G8而連接於第2連接 墊3 8上所設置之電極墊3 8b。再者,例如設置於第1連 器墊37之電極墊37c,係經由藍色LED晶片B1及B8 連接於第2連接器墊38上所設置之電極墊38c。亦即, 器 地 有 成 2 22 配 個 電 計 線 中 〇 色 之 墊 器 接 而 於 -15- 200832016 本實施型態中,係藉由1個系統的供電線對同色的2個 L E D晶片31進行供電。此外,1個系統的供電線,係一 邊跨越6個同色的LED晶片3 1,且同時連接同色的2個 LED晶片3 1。相反的,1個系統的供電線並不對鄰接之同 色的LED晶片31進行供電。 接下來參照第6圖及第7圖,說明發光裝置21的製 造方法。第6圖係顯示本實施型態之發光裝置2 1的製程 之流程圖。第7圖係顯示用以說明第6圖所示之流程圖中 的各項製程的具體程序之圖式。 首先製作配線基板3 0 (步驟1 〇 1 )。配線基板3 0的 製作可利用下列電鍍通孔法,亦即,例如以在表面雙面貼 附有銅箔之玻璃環氧基板或聚亞醯胺膜片等爲起始材料, 並藉由穿孔、電鍍、鈾刻等,形成表面配線3 5、內面配線 36、通孔、電極墊32、第1連接器墊37及第2連接器墊 3 8等。此外,亦可利用下列增層法,亦即,例如以藉由電 鍍通孔法等所製作之基板或絕緣基板等爲起始材料,並於 其上方形成絕緣層,製作導體圖案並進行層間連接而堆疊 導體層,藉此達到多層化之目的。第7圖(a )係顯示如 此製作之配線基板3 0。於第7圖(a )中,係省略配線等 的記載。 接著對所製作之配線基板3 0進行光阻處理(步驟1 〇2 )。具體而言,如第7圖(b )所示般,於配線基板3 0的 雙面形成由樹脂所構成之光阻層3 4。惟此時於基部3 〇 a當 中,於之後所述之安裝有LED晶片3 1之部位及形成有電 -16- 200832016 極墊3 2之部位上,不予形成光阻層3 4。此外,於第 壁30c當中,於之後所述之形成有電極墊37a〜37 3 8a〜3 8u之部位上,亦同樣不予形成光阻層34。於本 型態中,例如可藉由網版印刷的手法,而選擇地於配 板3 0上形成光阻層3 4。光阻層3 4例如可由熱硬化性 或紫外線硬化(UV Cure )型光阻所形成。此外,光 34例如可由白色等之於可見光區域中具有較高的光反 之材料所構成。 對於進行光阻處理後的配線基板3 0,例如可藉由 解銀電鍍,對暴露於基部30a的表面側之電極墊32 露於第2側壁30c的內面側之電極墊37a〜37u及電 3 8a〜3 8U進行表面處理。此外,亦可加入下列製程, 於光阻層3 4上,例如以絲印形成構件記號或構件位 或是完成後之配線基板3 0的名稱等之製程。 接下來,於形成有光阻層3 4之配線基板3 0的 30a上,裝設所需個數(此例中爲42個)的LED晶J (步驟103 )。具體而言,如第7圖(c)所示般,各 晶片3 1例如藉由使用有環氧樹脂、矽樹脂或丙烯酸 等之黏著,安裝於基部30a上所對應之位置(第3 g )所示之電極墊32之間)。之後以焊接線將各LED 3 1與所對應的電極墊3 2予以電性連接(步驟1 04 )。 之後進行LED晶片31的裝設以及對形成有焊接 配線基板3 0進行彎曲加工(步驟1 0 5 )。具體而言, 7圖(d )所示般,係使用模框等,對配線基板3 0的 2側 u及 實施 線基 光阻 阻層 射率 無電 及暴 極墊 亦即 址, 基部 t 31 LED 樹脂 0 ( b 晶片 線之 如第 基部 -17- 200832016 3〇a與第1側壁30b之交界部及基部30a與第2側壁30c 之交界部進行彎曲加工。結果使配線基板3 0變形爲凹字 狀’且由基部30a及第1側壁30b及第2側壁30c形成凹 部。於配線基板3 0上所形成之凹部內側的基部3 0a上, 成爲以直線狀排列有42個LED晶片3 1之狀態。 接下來安裝LED晶片3 1,且以樹脂將彎曲加工後之 配線基板3 0的凹部予以密封(步驟1 〇 6 )。具體而言,如 第7圖(e)所示般,以覆蓋各LED晶片3 1之方式地將液 狀樹脂注入至第1側壁30b的高度爲止,之後進行固化而 藉此形成密封部3 3 a。構成密封部3 3 a之樹脂,例如可使 用環氧樹脂、聚碳酸酯樹脂、矽樹脂或丙烯酸樹脂等之於 可見光區域中具有較局的光透射率之材料。 之後,於密封部33a上裝設透鏡部33b (步驟107 ) 。具體而言,如第7圖(f)所示般,使用透明樹脂等, 將由樹脂所構成之半圓柱狀的透鏡部3 3 b裝設於密封部 3 3 a上。構成透鏡部3 3 b之樹脂,與密封部3 3 a相同,例 如可使用環氧樹脂、聚碳酸酯樹脂、矽樹脂或丙烯酸樹脂 等之於可見光區域中具有較高的光透射率之材料。藉由以 上製程,可完成發光裝置21。[Technical Field] The present invention relates to a light-emitting device and a surface-emitting device, and more particularly to a light-emitting device including a solid-state light-emitting device. [Prior Art] In recent years, for example, in a display device such as a liquid crystal display device such as a liquid crystal television or a liquid crystal display, a backlight device is used as a light-emitting device in order to irradiate light from the back surface or the side surface of the display panel. The backlight device is provided with an end face light (side light) type, and is provided on both sides or a single side of the light guide plate made of a transparent resin, and is incident on the light guide plate by a reflection portion provided on the inner surface of the light guide plate. The light is reflected and irradiated to the surface of the liquid crystal panel. Such a backlight device generally uses a fluorescent tube such as a hot cathode type or a cold cathode type. On the other hand, in recent years, in order to replace such a backlight device using a fluorescent tube, in recent years, a light-emitting diode (LED) using a solid-state light-emitting element has been actively developed as a light source backlight device. In progress. A backlight device using a side light type of a light-emitting diode is known as a light source in which a plurality of light-emitting diodes are mounted on a substrate, and is disposed on one side of the light guide plate (for example, refer to the patent document) 1 ). Further, as known, a light-emitting element array module in which a plurality of light-emitting elements are mounted on a substrate is disposed on a metal plate in which a first side wall, a second side wall, and a bottom wall are formed by bending The bottom wall is a reflector on the first side wall of the metal plate and the second side wall of the -4-200832016 (see, for example, Patent Document 2). [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. 2006-310221. There are wirings for connecting the LEDs and the power supply. In particular, in recent years, in response to the demand for enlargement and high image quality of display panels, the number of light-emitting diodes mounted on the substrate has been gradually increased, and the number of wirings formed on the substrate has increased with this increase. Once the number of wirings formed on the substrate is increased, the area required for wiring wiring is also increased. Here, the method for increasing the area required for the wiring of the wiring may be, for example, enlarging the area of the substrate itself or increasing the number of layers of the wiring in the substrate. However, for example, when the former method is used, the width of the substrate, that is, the thickness of the backlight device in the direction perpendicular to the face of the display panel is increased, and as a result, the thickness of the coin device is also increased. On the other hand, for example, when the latter method is used, the former problem is not easily generated, but an increase in the number of wiring layers also causes an increase in the manufacturing cost of the substrate. The present invention has been made in view of the above-described technology, and aims to achieve a reduction in thickness of a light-emitting device having a solid-state light-emitting element. (Means for Solving the Problem) According to the above aspect, a light-emitting device to which the present invention is applied includes a wiring board having a concave -5 - 200832016-shaped cross section and having wiring formed thereon, and a direct mounting on the inner side of the concave portion of the wiring substrate, and is connected to a solid-state light-emitting element that is wired; and a reflection member that is formed inside the concave portion of the wiring substrate and that reflects light emitted from the solid-state light-emitting element. In the light-emitting device, the light-emitting device further includes a protective member that is provided inside the concave portion of the wiring substrate and that protects the solid-state light-emitting element. Further, it is characterized in that the wiring substrate is curved. Further, from another viewpoint, the present invention includes a light guide plate that emits light incident from a side surface toward an upper surface side, and a surface light-emitting device that emits light from a side surface of the light guide plate to a light source of the light guide plate, and is characterized in that The light source includes a plurality of solid-state light-emitting elements arranged along the side surface of the light guide plate, and a concave portion that is curved so as to face the side surface of the light guide plate, and a plurality of solid-state light-emitting elements are directly mounted on the light source. The inside of the concave portion includes a substrate for supplying wiring for supplying a plurality of the solid-state light-emitting elements, and is disposed inside the concave portion formed on the substrate, and the light emitted from the plurality of solid-state light-emitting elements is directed toward the light guide plate. Reflective layer of reflection. In the above-described light-emitting device, the substrate includes a base portion on which a plurality of solid-state light-emitting elements are directly mounted, a first side wall protruding from one end side of the base portion toward a side surface of the light guide plate, and the other end portion side from the base portion. a second side wall that protrudes toward a side surface of the light guide plate; and a reflective layer is formed on the first side wall and the second side wall. Further, the substrate includes a base portion to which a plurality of solid-state light-emitting elements are directly mounted, a first side wall projecting from one end side of the base portion toward a side surface of the light guide plate, and a side surface from the other end portion side of the base portion toward the light guide plate. The second side wall is protruded; the protruding length of the second side wall is set to -6 - 200832016, which is larger than the first side wall; the wiring is formed on the base and the second side wall, and wiring is not formed in the first side wall. Further, it is characterized in that a plurality of solid-state light-emitting elements are composed of a red light-emitting element that emits red light, a green light-emitting element that emits green light, and a blue light-emitting element that emits blue light in the following order. Further, it is characterized in that the wiring is supplied to two or more solid-state light-emitting elements per system. Further, it is characterized in that two or more solid-state light-emitting elements supplied by wiring in one system are not adjacent to each other. Further, it is characterized in that the wiring system supplies power to a plurality of solid-state light-emitting elements by combining series connection and parallel connection. Advantageous Effects of Invention According to the present invention, it is possible to achieve a reduction in thickness of a light-emitting device including a solid-state light-emitting element. [Embodiment] Hereinafter, the best mode for carrying out the invention (hereinafter referred to as an embodiment) will be described in detail with reference to the accompanying drawings. Fig. 1 is a view showing the overall configuration of a liquid crystal display device to which the present embodiment is applied. A liquid crystal display device of the present embodiment is provided with a liquid crystal display module 50 and a backlight device 10 provided on the back side (lower side in Fig. 1) of the liquid crystal display module 50. In the present embodiment, a side end type backlight device 10 is used. The backlight device 1 as a surface light-emitting device includes a light-emitting module 1 1 , a light guide plate 12 , a reflection plate 13 , a diffusion plate 14 , and a thin film: [5, 16; 200832016 and a brightness enhancement film 17 . The light-emitting device or the light-emitting module 1 1 as a light source is disposed on the side surface disposed on one side (long side) of the light guide plate 12. In the present embodiment, the light-emitting module 11 is configured by arranging a plurality of LED chips emitting light of respective colors of red (R), green (G), and blue (B). The configuration of the light-emitting module 1 1 will be described in detail later. The light guide plate 12 has a rectangular shape corresponding to the liquid crystal panel 51, and is made of, for example, an acrylic resin having excellent light transmittance. On the opposite surface of the light guide plate 12 and the opposite surface of the liquid crystal display module 50, reflection points (not shown in the drawings) including irregularities or white ink are formed. The reflectors 13 are disposed in close contact with each other on the dot formation surface side of the light guide plate 12. This reflecting plate 13 is composed of a plate (or diaphragm) having a white or metallic luster. The diffusion plate 14 is placed in close contact with the surface of the light guide plate 12 opposite to the reflection plate 13 . The diffusion plate 14 is, for example, a plate (or a diaphragm) composed of a laminate of optical films. The crucible sheets 15 and 16 are provided on the upper portion of the reflector 13 (close to one side of the liquid crystal display module 50). The tantalum sheets 15 and 16 are composed of a diffraction grating film having mutually orthogonal directions. The brightness enhancement film 17 is composed of, for example, a PCF (Polarization Conversion Film) having a polarization separation function. On the other hand, the liquid crystal display module 50 includes a liquid crystal panel 5 1 -8 to 200832016 which is a display panel formed by sandwiching liquid crystal with two glass substrates, and a liquid crystal panel 5 1 laminated on the liquid crystal panel 51. Each of the glass substrates is limited to the polarizing plates 5 2, 5 3 in a certain direction. Further, in the liquid crystal display device, peripheral members such as the driving L S I which are not shown in the drawings are also mounted. The liquid crystal panel 51 is composed of various constituent elements not shown in the drawings. For example, in two glass substrates, there are a display electrode (not shown), an active device such as a thin film transistor (TFT: Thin Film Transistor), a liquid crystal, a spacer, a sealant, an alignment film, a common electrode, and the like. Protective film, color filter, etc. The constituent unit of the backlight unit 1 can be arbitrarily selected. For example, the unit of the light-emitting module 1 1 and the light guide plate 12 is simply referred to as a "backlight device (backlight)", and the reflector plate 13 is not included, the diffusion plate 14 is formed, and the thin plates 15 and 16 are And a flow pattern of the laminate of the optical compensation sheets such as the brightness enhancement film 17 or the like. Next, the operation of this backlight device 1 。 will be described. When the RGB LED chips of the respective colors are turned on in the light-emitting module 1 1 , the RGB light beams emitted from the respective LED chips are incident from one side surface of the light guide plate 12 . In this manner, in the light guide plate 12, the light guided from the light-emitting module 11 to the light guide plate 12 is guided to the light guide plate 12 by total reflection of a material (for example, acrylic resin) constituting the light guide plate 12. comprehensive. At this time, the light irradiated to the reflection point provided on the inner surface side of the light guide plate 12 changes its traveling path so that the light having a smaller angle than the total reflection angle is emitted from the surface of the light guide plate 12 (diffusion plate 14). The side of the side) is shot. Further, light that is not irradiated on the reflection point of the light guide plate 12 is reflected by the reflection plate 13 and is reflected on the surface of the light guide plate 12. By repeating this -9 - 200832016, from the surface of the light guide plate 12, it covers a comprehensive and emits almost uniform light. In the meantime, the RGB color lights are mixed and emitted as white light. The light emitted from the surface of the light guide plate 12 in this manner is scattered and diffused by the diffusion plate 14 and is emitted in a state of being more uniform. Thereafter, the light emitted from the diffusing plate 14 is focused toward the front by the enamel sheets 15 and 16, that is, condensed toward the brightness enhancement film 17 (the liquid crystal display module 50). Then, the light emitted from the enamel sheet 16 is polarized and separated by the brightness enhancement film 17 to be emitted toward the liquid crystal display module 50 while the brightness is raised. Therefore, in the liquid crystal display module 50, it is incident, and a sufficient color mixture is formed to achieve whitening and the intensity covers the entire surface to be uniform, and the brightness covers the overall and improved light. Hereinafter, the light-emitting module 11 used in the above backlight device 1 will be described in detail. Fig. 2(a) is a perspective view showing the configuration of the light-emitting module 1 1. The light-emitting module 11 includes a light-emitting device 21 on which LED crystals are mounted, and a support member 22 that supports the light-emitting device 21. Further, Fig. 2(b) shows a state in which the light-emitting module 1 1 is decomposed into the light-emitting device 2 1 and the support member 22 〇 The light-emitting device 2 1 includes the wiring substrate 30. In the present embodiment, the wiring board 30 has a structure that is curved in a concave shape. Therefore, the wiring board 30 has a base portion 30a which is a bottom portion of the formed recessed portion, a first side wall 3 0b which protrudes at a substantially right angle from one end of the base portion 30a, and the other end portion from the base portion 30a. The second side wall 3 0 c protrudes at a right angle. Here, in -10-200832016, the protruding length of the second side wall 30c is set to be larger than the protruding length of the first side wall 3B1. Further, a plurality of LED chips (not shown) are disposed along the longitudinal direction of the base portion 30a on the inner side of the concave portion formed on the wiring substrate 30, and the lens 3 3 for protecting the LED chips is used to protect the lens 3 3 of the LED chip. It is formed so as to be inserted into the concave portion of the wiring board 30. The detailed construction of these will be detailed later. On the other hand, in order to allow the wiring board 30 to be embedded and held, the support member 22 has the same structure as the wiring board 30, and has a structure that is curved in a concave shape. Therefore, the support member 22 is provided with the bottom portion 22a of the recessed portion formed, the first side portion 22b that protrudes from the one end of the bottom portion 22a in the right-angle direction, and the other end from the other end of the bottom portion 22a to protrude in the same direction as the first side portion 22b. The second side portion 22c. Here, the protruding length of the second side portion 22c is set to be larger than the protruding length of the first side portion 22b. This support member 22 can be made of, for example, a metal plate of stainless steel or the like. Here, the protruding length of the first side wall 30b of the wiring board 30 provided in the light-emitting device 21 is set to be smaller than the protruding length of the first side portion 2bb provided on the support member 22. On the other hand, the protruding length of the second side wall 30c of the wiring board 30 provided in the light-emitting device 21 is set to be larger than the protruding length of the second side portion 22c provided in the support member 22. Therefore, in a state where the light-emitting device 21 is supported by the support member 22, the first side portion 22b protrudes more than the first side wall 30b, and the second side wall 30c protrudes more than the second side portion 22c. Further, on the lower side (outer side) of the protruding portion of the second side wall 30c, a connector pad for supplying the wiring substrate 30 to the above-mentioned -11 - 200832016 is provided. Fig. 3 is a view showing the configuration of the light-emitting device 21. Here, Fig. 3(a) shows a front view of the light-emitting device 21 as viewed from the side of the light guide plate 1 shown in Fig. 1, and Fig. 3(b) shows an enlarged portion of the main part of Fig. 3(a). 3(c) is a cross-sectional view taken along line IIIC-IIIC of FIG. 3(b). The light-emitting device 21 is composed of a wiring substrate 30, a plurality of LED chips 31, a lens 33, and a photoresist layer 34. The main part. The wiring board 30 is made of, for example, a so-called glass epoxy board mainly composed of a glass cloth base epoxy resin. In addition to the glass epoxy substrate, for example, a flexible printed circuit board (FPC: Flexible Printed Circuit) which is permeable and bendable can be used. The wiring board 30 is provided with wiring (not shown) for supplying power to each of the LED chips 31. In the present embodiment, a so-called two-layer substrate in which wiring is formed on both sides of the wiring substrate 30 is used. The details of the wiring formed on the wiring substrate 30 will be described in detail later. A plurality of LED chips 31 having a function of a solid-state light-emitting element are directly attached to the base portion 30a inside the concave portion of the wiring substrate 30 in a straight line. In this embodiment, a total of 42 LED chips 31 are mounted on the base 30 a. 42 LED chips 31 are red LED chips R 1 R R as red light emitting elements emitting red light. 14. The green LED chips G1 to G14 which are green light-emitting elements that emit green light, and the blue LED chips B1 to B14 which are blue light-emitting elements that emit blue light. Each of the LED chips 31 is in the order of red, green, and blue, specifically, R1 -12-200832016, G1, B1, R2, G2, B2, ..., R14, G14, and B14. Further, 84 electrode pads 32 are formed so as to sandwich the LED chips 31 by the base portion 30a' inside the concave portion of the wiring substrate 30. Each of the LED chips 31 is connected to the electrode pads 32 at both ends through a bonding wire. Further, power is supplied to each of the electrode pads 32 through the wiring formed on the substrate 30. The lens 3 3 having the function of the protective member is provided with the sealing portion 3 lens portion 33b. In addition to protecting each of the LED chips 31, the lens 33 has a function of efficiently and almost uniformly guiding the light emitted from the corresponding LED chip 31 to the light guide plate 12 shown in Fig. 1. Here, the sealing portion 3 3 a is formed so as to be embedded in the concave portion of the wiring substrate after the bending process, that is, in contact with the inner surface of the concave portion of the wiring substrate 30. Further, the lens portion 3 3 b is formed in a semicircular shape on the dense 33a. In the present embodiment, since a plurality of LED chips 31 are linear, the entire sealing portion 3 3 a has a quadrangular prism shape, and the entire lens portion 3 3 b has a semi-cylindrical shape. Further, these dense portions 3 3 a and the lens portion 3 3 b have a plurality of transparent light transmission functions for the respective colors of red, green and blue. The photoresist layer 34 is formed on both sides of the wiring substrate 30. The photoresist is not formed in the position where the LED crystal is mounted on the base portion 30a of the wiring substrate 30, and the position where the electrode pad 32 is provided. The photoresist layer 34 is a wiring and a substrate formed on both sides of the wiring substrate 30. Further, among the layers 34, which are formed inside the concave portion of the wiring substrate 30, there are also a sequence: the electrical wiring 3a and the ratio of the sealing portion of the panel 30 are arranged in a division, and the sealing portion is a layer 34. The sheet 31 protects the function of the reflective member or the reflective layer from which the light emitted from the LED chip 31 is reflected from the -13-200832016. Fig. 4 is a view showing a wiring pattern formed on the wiring substrate 30. Here, Fig. 4(a) is a view showing a wiring pattern of the surface of the wiring substrate 30 on which the LED chip 31 is mounted. Fig. 4(b) is a view showing a wiring pattern of the inner surface of the wiring substrate 30 on the opposite side to the surface. Fig. 4 is a view showing a state before the wiring substrate 30 is bent or the photoresist layer 34 is formed. As shown in Fig. 4(a), a surface wiring 35 is formed on the surface side of the wiring substrate 30. In the present embodiment, the surface wiring 35 is formed on the base portion 30a and the second side wall 30c after the first side wall 30b is removed from the surface of the wiring substrate 30. In the wiring board 30 shown in Fig. 4(a), the one-dot chain line is a portion where the bending process (valley bending) is performed later. On the other hand, as shown in Fig. 4(b), the inner surface wiring 36 is formed on the inner surface side of the wiring board 30. In the present embodiment, the inner surface wiring 36 is formed on the inner surface of the wiring board 30, and the second side wall 30c after the base portion 30a and the first side wall 30b are removed. Therefore, the surface wiring 35 and the inner surface wiring 36 are not formed on the first side wall 3 Ob of the wiring board 30. In the wiring board 30 shown in Fig. 4(b), the broken line is a portion where the bending process (mountain bending) is performed later. The surface wiring 35 and the inner surface wiring 36 are electrically connected via through holes formed through the wiring substrate 30. Further, on the inner surface of the wiring board 30, a first connector pad 37 and a second connector pad for supplying power to the respective LED chips 31 are provided via the surface wiring 35 and the inner surface wiring 36. 38. Here, the second connection pad 37 is connected to the power source. On the other hand, the second connector pad 38 is connected. The first connector pad 3 7 and the second connector pad 38 are respectively formed with 21 electrode pads, and each electrode pad is electrically connected to the surface wiring through the through hole formed through the wiring substrate 30. Sexual connection. When the light-emitting device 2 1 having the wiring board 30 shown in the figure is attached to the support member, the first connector pad 37 and the second connector pad 38 are disposed more prominently than the second side portion 22c. In the position. Thereby, it is possible to easily supply power to the wiring substrate 30. Fig. 5 is a view for explaining a power supply system according to a line pattern formed on the wiring substrate 30. The first connector pad 3 7 is provided with 2 1 electrode pads 37a to 37u. Further, the second connector pad 38 is provided with 21 electrode pads 38a to 38uo. In the present embodiment, 42 LED chips 31 are connected by using a power supply line of 21 systems. Therefore, the power supply of one system is connected to the two L E D chips 31, respectively. That is, in the power supply system, two LED chips 31 connected in series are connected in parallel, for example, 21 electrode pads 37a provided on the first connector pad 37 are connected via red LED chips R1 and R8. An electrode pad 38 a is disposed on the second connector pad 38. Further, for example, the electrode 3 7b provided on the first connector pad 37 is connected to the electrode pad 38b provided on the second connection pad 38 via the green LED chips G1 and G8. Further, for example, the electrode pad 37c provided in the first connector pad 37 is connected to the electrode pad 38c provided on the second connector pad 38 via the blue LED chips B1 and B8. That is to say, the device has a 2 22 with a black pad in the electric meter line. In the embodiment -15- 200832016, in the present embodiment, the two LED chips 31 of the same color are supplied by one system. Power is supplied. Further, the power supply line of one system is one across the six LED chips 3 of the same color and simultaneously connected to two LED chips 31 of the same color. Conversely, the power supply lines of one system do not supply power to adjacent LED chips 31 of the same color. Next, a method of manufacturing the light-emitting device 21 will be described with reference to Figs. 6 and 7. Fig. 6 is a flow chart showing the process of the light-emitting device 21 of the present embodiment. Fig. 7 is a view showing a specific procedure for explaining various processes in the flowchart shown in Fig. 6. First, the wiring substrate 30 is produced (step 1 〇 1 ). For the fabrication of the wiring substrate 30, the following plating via method can be used, that is, for example, a glass epoxy substrate or a polyimide film having a copper foil attached to both surfaces of the surface as a starting material, and perforated by perforation The surface wiring 35, the inner surface wiring 36, the via hole, the electrode pad 32, the first connector pad 37, the second connector pad 38, and the like are formed by plating, uranium etching, or the like. Further, the following layering method may be used, that is, for example, a substrate or an insulating substrate produced by a plated through hole method or the like is used as a starting material, and an insulating layer is formed thereon to form a conductor pattern and perform interlayer connection. The conductor layers are stacked to achieve the purpose of multi-layering. Fig. 7(a) shows the wiring substrate 30 thus fabricated. In the seventh diagram (a), the description of the wiring and the like is omitted. Next, the produced wiring substrate 30 is subjected to photoresist processing (step 1 〇 2 ). Specifically, as shown in Fig. 7(b), a photoresist layer 34 made of a resin is formed on both surfaces of the wiring substrate 30. However, at this time, in the base portion 3, the photoresist layer 34 is not formed on the portion where the LED wafer 31 is mounted and the portion where the electric-16-200832016 pole pad 3 2 is formed. Further, in the first wall 30c, the photoresist layer 34 is also not formed in the portions where the electrode pads 37a to 37 3 8a to 38u are formed later. In this form, the photoresist layer 34 is selectively formed on the board 30 by, for example, screen printing. The photoresist layer 34 can be formed, for example, of a thermosetting or UV curable photoresist. Further, the light 34 may be composed of, for example, a white material or the like having a high light reversal in the visible light region. For the wiring substrate 30 subjected to the photoresist treatment, for example, the electrode pads 32 exposed on the surface side of the base portion 30a are exposed on the inner surface side of the electrode pads 37a to 37u of the second side wall 30c by electroless silver plating. 3 8a~3 8U for surface treatment. Further, a process may be added to the photoresist layer 34, for example, by forming a member mark or a member position by silk screen or the name of the completed wiring substrate 30. Next, on the 30a of the wiring substrate 30 on which the photoresist layer 34 is formed, a desired number (42 in this example) of LED crystals J is mounted (step 103). Specifically, as shown in Fig. 7(c), each of the wafers 3 1 is attached to the base portion 30a by a bonding using epoxy resin, enamel resin, acrylic acid or the like (third g). Between the electrode pads 32 shown). Then, each LED 3 1 and the corresponding electrode pad 3 2 are electrically connected by a bonding wire (step 104). Thereafter, the LED chip 31 is mounted and the soldered wiring substrate 30 is formed to be bent (step 105). Specifically, as shown in FIG. (d), a mold frame or the like is used, and the two sides u of the wiring substrate 30 and the line-based photo-resistance layer have no electricity and the violent pad is also the site, and the base t 31 The LED resin 0 (b wafer line is bent at the boundary portion between the base portion -17-200832016 3〇a and the first side wall 30b and the boundary portion between the base portion 30a and the second side wall 30c. As a result, the wiring substrate 30 is deformed into a concave portion. A concave portion is formed by the base portion 30a, the first side wall 30b, and the second side wall 30c. The base portion 30a on the inner side of the concave portion formed on the wiring board 30 has 42 LED chips 31 arranged in a line. Next, the LED wafer 3 1 is mounted, and the concave portion of the wiring substrate 30 after the bending process is sealed with a resin (step 1 〇 6 ). Specifically, as shown in Fig. 7 (e), the cover is covered. Each of the LED chips 31 is filled with a liquid resin until the height of the first side wall 30b, and then cured to form a sealing portion 3 3 a. The resin constituting the sealing portion 3 3 a can be, for example, an epoxy resin. , polycarbonate resin, enamel resin or acrylic resin in the visible region The material having a relatively high light transmittance is provided. Thereafter, the lens portion 33b is attached to the sealing portion 33a (step 107). Specifically, as shown in Fig. 7(f), a transparent resin or the like is used. The semi-cylindrical lens portion 3 3 b is formed on the sealing portion 3 3 a. The resin constituting the lens portion 3 3 b is the same as the sealing portion 3 3 a, and for example, an epoxy resin or a polycarbonate resin can be used. A material having a high light transmittance in a visible light region, such as a enamel resin or an acrylic resin. The light-emitting device 21 can be completed by the above process.
之後,如此製作之發光裝置2 1,可進行如第7圖(g )所示般對支撐構件2 2進行嵌入,而可獲得發光模組j J ο 第8圖係顯示用以說明從如此製造之發光裝置2 1所 照射之光的路徑之圖式。 -18- 200832016 一旦經由第1連接器墊37及第2連接器墊38( 第4圖)使特定電流流通至LED晶片31,則使LED 3 1發光。從LED晶片3 1所射出的光會往各方向擴散 於所射出的光當中,例如於圖中往上方射出之光 經由透鏡3 3直接以該狀態朝向第1圖所示之導光板 進。 另一方面,於所射出的光當中,例如於圖中往斜 方射出之光,係入射至配線基板3 0的第1側壁3 Ob万 側壁3 0c上所設置之光阻層3 4。此時,光阻層對可見 有高反射特性,因此,入射於光阻層3 4之光,係一 具有反射層的功能之光阻層3 4所反射,同時朝向圖 上方前進。 如以上所說明般,於本實施型態中,係將安裝有 個LED晶片3 1之配線基板3 0予以彎曲。之後於配 板3 0上,橫跨彎曲部而形成配線。因此,即使隨著 晶片3 1之安裝數的增加或因串聯及並聯連接所導致 雜配線圖案的形成,而使配線所需的面積增大,於配 板3 0上亦可一邊抑制配線層數的增加,一邊抑制背 置1 〇於厚度方向之發光模組1 1的厚度增加。結果可 背光裝置1 〇的薄型化。在此,於本實施型態中,於 基板30當中,係不於突出長度較短的第1側壁30b 成配線。藉此,於使配線基板3 0彎曲時,可降低配 生斷線之風險。 此外,於本實施型態中,係於配線基板3 0上所 參照 晶片 〇 ,係 12前 向上 C第2 光具 邊由 中的 多數 線基 LED 之複 線基 光裝 達成 配線 上形 線產 形成 -19- 200832016 之凹部內側形成光阻層3 4,藉此可藉由反射,將從各 LED晶片31所射出的光導引至導光板12側。藉此,可提 高背光裝置1 〇的發光效率。 再者,於本實施型態中,係於配線基板3 0上所形成 之凹部內側形成密封部3 3 a,並於其上方形成透鏡部3 3 b 。在此,由於密封部3 3 a只需以配線基板3 0爲模框使樹 脂流入而形成,因此該形成較爲容易。 此外,於本實施型態中,係使設置於配線基板3 0的 凹部內側之光阻層3 4具有反射構件或反射層之功能,但 是並不限定於此。例如可預先於配線基板3 0的凹部內側 形成鋁膜等金屬反射膜,並以此作爲反射構件或反射層之 功能。 此外,於本實施型態中,係排列42個RGB的各色 LED晶片31而構成發光裝置21,但是配線基板30上所 安裝之LED晶片31的數目,例如亦可因應液晶面板51 的大小或所要求的光學特性等,而適當的進行設計變更。 再者,於本實施型態中,係說明將發光模組1 1適用 於液晶顯示模組50的背光裝置1 0之例子,但發光模組1 1 的適用對象並不限定於此,除了例如螢光燈等的照明器具 之外,亦可利用於室內或室外的照明機器等。 【圖式簡單說明】 第1圖係顯示適用本實施型態之液晶顯示裝置的全體 構成之圖式。 -20- 200832016 第2圖(a )係顯示用以說明發光模組之圖式,第2 圖(b )係顯示用以說明構成發光模組之發光裝置及支撐 構件之圖式。 第3圖(a )係顯示發光裝置的正視圖,第3圖(b ) 係顯示(a )的要部擴大圖,第3圖(c )係顯示(b )之 IIIC-IIIC 剖面圖。 第4圖(a)係顯示形成於配線基板的表面(LED晶 片的安裝面)之配線圖案之圖式,第4圖(b )係顯示形 成於配線基板的內面之配線圖案之圖式。 第5圖係顯示用以說明對各LED晶片之供電路徑之 圖式。 第6圖係顯示用以說明發光裝置的製程之流程圖。 第7圖係顯示用以說明發光裝置的製程之圖式。 第8圖係顯示用以說明從發光模組所照射之光的路徑 之圖式。 【主要元件符號說明】 1 〇 :背光裝置 Π :發光模組 1 2 :導光板 .1 3 :反射板 1 4 :擴散板 21 :發光裝置 22 :支撐構件 -21 - 200832016 3 0 :配線基板 3 0 a :基部 3 0b :第1側壁 3 0 c :第2側壁 31 : LED晶片 3 2 :電極墊 3 3 :透鏡 3 4 :光阻層 3 5 :表面配線 3 6 :內面配線 3 7 :第1連接器墊 3 8 :第2連接器墊 5 0 :液晶顯示模組 R1〜R14 :紅色LED晶片 G 1〜G 1 4 :綠色L E D晶片 B1〜B14 :藍色LED晶片 -22Thereafter, the light-emitting device 2 1 thus fabricated can be embedded into the support member 22 as shown in FIG. 7(g), and the light-emitting module j J can be obtained. FIG. 8 is a view for explaining the manufacture from this. A diagram of the path of the light that is illuminated by the illumination device 21. -18- 200832016 When a specific current flows to the LED chip 31 via the first connector pad 37 and the second connector pad 38 (Fig. 4), the LED 31 emits light. The light emitted from the LED chip 31 is diffused into the emitted light in various directions. For example, the light emitted upward in the drawing is directly directed to the light guide plate shown in Fig. 1 via the lens 3 3 in this state. On the other hand, among the light emitted, for example, the light which is obliquely projected in the figure is incident on the photoresist layer 34 provided on the first side wall 3 of the wiring board 30. At this time, since the photoresist layer has high reflection characteristics, the light incident on the photoresist layer 34 is reflected by the photoresist layer 34 having a function of the reflective layer while advancing toward the upper side of the figure. As described above, in the present embodiment, the wiring substrate 30 to which the LED chips 31 are mounted is bent. Then, on the board 30, wiring is formed across the curved portion. Therefore, even if the number of mountings of the wafers 31 increases or the formation of the miscellaneous wiring patterns due to series and parallel connection increases the area required for wiring, the number of wiring layers can be suppressed on the wiring board 30. When the increase is made, the thickness of the light-emitting module 1 1 which suppresses the back side 1 in the thickness direction is increased. As a result, the backlight unit 1 can be made thinner. Here, in the present embodiment, in the substrate 30, wiring is not performed on the first side wall 30b having a short protruding length. Thereby, when the wiring board 30 is bent, the risk of occurrence of disconnection can be reduced. Further, in the present embodiment, the wafer 〇 is referred to on the wiring substrate 30, and the wiring is formed by the multi-line base light of the plurality of line-based LEDs in the front side of the second optical device. The photoresist layer 34 is formed inside the concave portion of -19-200832016, whereby the light emitted from each LED wafer 31 can be guided to the side of the light guide plate 12 by reflection. Thereby, the luminous efficiency of the backlight unit 1 can be improved. Further, in the present embodiment, the sealing portion 3 3 a is formed inside the concave portion formed on the wiring substrate 30, and the lens portion 3 3 b is formed thereon. Here, since the sealing portion 3 3 a is formed by allowing the resin to flow into the wiring substrate 30 as a mold frame, the formation is easy. Further, in the present embodiment, the photoresist layer 34 provided inside the concave portion of the wiring substrate 30 has a function of a reflecting member or a reflecting layer, but is not limited thereto. For example, a metal reflection film such as an aluminum film can be formed in advance on the inside of the concave portion of the wiring substrate 30, and this function as a reflection member or a reflection layer. Further, in the present embodiment, the RGB LED chips 31 of the RGB colors are arranged to form the light-emitting device 21, but the number of the LED chips 31 mounted on the wiring substrate 30 may be, for example, the size or the size of the liquid crystal panel 51. The required optical characteristics, etc., and appropriate design changes. In the present embodiment, an example in which the light-emitting module 1 1 is applied to the backlight device 10 of the liquid crystal display module 50 will be described. However, the applicable object of the light-emitting module 1 1 is not limited thereto, except for example. In addition to lighting fixtures such as fluorescent lamps, it can also be used in indoor or outdoor lighting equipment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the overall configuration of a liquid crystal display device to which the present embodiment is applied. -20- 200832016 Fig. 2(a) shows a diagram for explaining a light-emitting module, and Fig. 2(b) shows a diagram for explaining a light-emitting device and a supporting member constituting the light-emitting module. Fig. 3(a) shows a front view of the light-emitting device, Fig. 3(b) shows an enlarged view of the main part of (a), and Fig. 3(c) shows a cross-sectional view of IIIC-IIIC of (b). Fig. 4(a) is a view showing a wiring pattern formed on the surface of the wiring board (mounting surface of the LED wafer), and Fig. 4(b) is a diagram showing a wiring pattern formed on the inner surface of the wiring board. Figure 5 is a diagram showing the power supply path for each LED chip. Figure 6 is a flow chart showing the process of the illuminating device. Fig. 7 is a view showing a process for explaining the process of the light-emitting device. Fig. 8 is a view showing a path for explaining light irradiated from the light-emitting module. [Description of main component symbols] 1 〇: backlight device Π: light-emitting module 1 2 : light guide plate. 1 3 : reflector 1 4 : diffuser plate 21 : light-emitting device 22 : support member - 21 - 200832016 3 0 : wiring substrate 3 0 a : base portion 3 0b : first side wall 3 0 c : second side wall 31 : LED wafer 3 2 : electrode pad 3 3 : lens 3 4 : photoresist layer 3 5 : surface wiring 3 6 : inner surface wiring 3 7 : First connector pad 3 8 : 2nd connector pad 5 0 : Liquid crystal display module R1 to R14 : Red LED chip G 1 to G 1 4 : Green LED chip B1 to B14 : Blue LED chip-22