JP2004014899A - Series connection of light emitting diode chip - Google Patents

Series connection of light emitting diode chip Download PDF

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JP2004014899A
JP2004014899A JP2002168148A JP2002168148A JP2004014899A JP 2004014899 A JP2004014899 A JP 2004014899A JP 2002168148 A JP2002168148 A JP 2002168148A JP 2002168148 A JP2002168148 A JP 2002168148A JP 2004014899 A JP2004014899 A JP 2004014899A
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emitting diode
light emitting
light
series
substrate
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JP2002168148A
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Ming-De Lin
林明徳
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Para Light Electronics Co Ltd
光鼎電子股▲ふん▼有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

PROBLEM TO BE SOLVED: To improve light emission brightness from a single chip by assuring the use of high operation voltage per a single chip of a light emitting diode.
SOLUTION: A plurality of light emitting diodes are arranged in a two dimensional array on a single substrate as a unit, and voltage between the opposite ends of the light emitting diode formed on the substrate is raised by connecting unit chips in series to assure the use of high operation voltage and improve light emission brightness. The use of a commercial power supply is assured by increasing the number of units of the light emitting diodes connected in series, and hence power supply equipment can be simplified.
COPYRIGHT: (C)2004,JPO

Description

【0001】 [0001]
【発明の属する技術分野】 BACKGROUND OF THE INVENTION
本発明は、発光ダイオードチップの直列構造に関し、特に発光ダイオード内部で等価直列方式を利用して単一チップ(LED)の発光輝度および動作電圧を高めるとともに、外部の電源システムに取り付ける外部電源回路の使用を省略することができる技術に関する。 The present invention relates to a series configuration of a light emitting diode chip, to increase the light emission luminance and an operating voltage of a single chip (LED), especially by using the equivalent series system with light-emitting diodes inside, the external power supply circuit attached to an external power system technique can be omitted use.
【0002】 [0002]
【従来の技術】 BACKGROUND OF THE INVENTION
一般の発光ダイオードチップにおいて単一チップの輝度を高める方式は、チップサイズを増大させることであり、そのサイズは9mm×9mmから25mm×25mmへとなり、最近2年間においては40mm×40mmまで発展してきている。 Schemes in a general light emitting diode chips increase the brightness of a single chip is to increase the chip size, its size is made 9 mm × 9 mm to 25 mm × 25 mm, in the last two years evolved to 40 mm × 40 mm there. そして一つのチップの動作電流は20mAから50mAへ、そして500mAへとなり、一般照明用電源は交流(AC)110Vあるいは220Vであり、発光ダイオード(LED)の電流は20mAから500mAとなっている。 And a chip operating current to 50mA from 20mA of, and become to 500mA, for general lighting source is an alternating current (AC) 110V or 220V, the current of the light emitting diode (LED) has a 500mA from 20mA. 電圧は2Vから4Vの間の直流(DC)であり、中間の電流は大きければ大きいほど電源の供給が困難となった。 Voltage is a direct current between a 2V 4V (DC), the intermediate current became difficult power supply larger. そのため、交流(AC)の110Vあるいは220Vと直流(DC)パワーの2V×500mAから4V×1Aの整流設備、変圧回路設備のコストと困難度は相対的に高まった。 Therefore, the AC rectification facilities, cost and difficulty of the transformer circuit equipment 110V or 220V direct current (DC) 4V × 1A from 2V × 500mA of power (AC) is increased relatively. 長期間使用すると、非常に多くの電力を消耗するとともに電源設備は負荷に耐えることが難しくなった。 A long period of use, become the power supply equipment with consumes very much power it is difficult to withstand the load. 上で述べた発光ダイオードの等価回路を図7および図8に示す。 The equivalent circuit of the light-emitting diode mentioned above is shown in FIGS.
【0003】 [0003]
【発明が解決しようとする課題】 [Problems that the Invention is to Solve
本発明の主な目的は、発光ダイオードチップの内部を直列方式の等価回路によりチップ面積を増大させる方式で、単一発光ダイオード(LED)の輝度を高める際に、チップ動作電圧を高めて動作電流を維持し、従来の大型チップが大電流と低電圧を使用しなければならないという動作上の欠点を改善する。 The main purpose of the present invention, light emitting diodes inside the chip by the equivalent circuit of the serial type in a manner to increase the chip area, in increasing the brightness of a single light-emitting diode (LED), the operating current increases the chip operation voltage maintaining, conventional large chip improves the disadvantages of the operation and must use high current and low voltage. そして、発光ダイオードが2V×500mA、4V×1Aの直流(DC)パワーではなく、10V、24V、110V、…など、或いは20mA、50mA、…など、或いは10Vで2mAなど多くの選択肢を持たせることができる。 The light emitting diode is 2V × 500mA, rather than a direct current (DC) power of 4V × 1A, 10V, 24V, 110V, ... etc., or 20 mA, 50 mA, ... etc., or be provided with many choices, such as 2mA at 10V can. 本発明は異なる動作条件下で同様あるいは更に高いパワーを発生させて、発光ダイオード(LED)と外部電源の動作回路の複雑性を改善する。 The present invention is by generating the same or higher power in different operating conditions, to improve the complexity of the light-emitting diode (LED) and the operation circuit of the external power supply.
【0004】 [0004]
【課題を解決するための手段】 In order to solve the problems]
上で述べた目的を達成するために、本発明の発光ダイオードチップの直列構造は、二次元アレイの方式により複数の発光ダイオードを単一の基板上に配置して、 複数の発光ダイオードのP型半導層とN型半導層が導電体により電気的に接続されて、複数の発光ダイオードのP、N型半導層を直列状態にするとともに、導電体と電気的に接続していないP、N型半導層がそれぞれ導電部と電気的に接続されて、導電部を外部電源に接続するのに使用する。 In order to achieve the object mentioned above, the series structure of a light-emitting diode chip of the present invention, by arranging a plurality of light emitting diodes on a single substrate by method a two-dimensional array, P-type of the plurality of light emitting diodes Hanshirubeso and by N-type semiconductor layer are electrically connected by conductors, not connected P of the plurality of light emitting diodes, the N-type semiconductor layer as well as in series state, conductor and electrically P , N-type semiconductive layer is connected to the conductive portion and electrically, respectively, used to connect the conductive part to an external power source. このようにして、単一発光ダイオードを高輝度の光源として発光させるとともに、それに取り付ける電源設備を省略することができる。 In this manner, the light emission of a single light-emitting diode as a high brightness light source, it is possible to omit the power supply equipment to be attached to it.
【0005】 [0005]
【発明実施の形態】 [Form of invention implementation]
図1から図3はそれぞれ、本発明における発光ダイオードの平面図、基板の配置図および基板の側面図である。 Respectively, from Figure 1. Figure 3 is a plan view of a light emitting diode in the present invention, is a side view of the layout and the substrate of the substrate. 図示するように、本発明の発光ダイオードチップの直列構造において、発光ダイオード1は、P型半導層11および電気的に基板2上に接続されたN型半導層12からなる。 As illustrated, in the serial structure of the light-emitting diode chip of the present invention, the light emitting diode 1 is composed of a P-type semiconductive layer 11 and electrically N-type semiconductor layer 12 connected on the substrate 2. 基板2上には二次元アレイ方式により複数の発光ダイオード1が配置されて、基板2は絶縁材質からなる。 On the substrate 2 is disposed a plurality of light emitting diodes 1 by a two-dimensional array type, the substrate 2 is made of an insulating material. 基板2は透明体あるいは不透明体でもよく、複数の発光ダイオード1のP型半導層11およびN型半導層12は導電体3により電気的に接続される。 Substrate 2 may be a transparent body or an opaque material, P-type semiconductive layer 11 and the N-type semiconductor layer 12 of a plurality of light emitting diodes 1 are electrically connected by a conductor 3. 導電体3は透明体あるいは不透明体であり、ワイヤーボンディングあるいはチップメッキコーティングの方式により、導電体3からなる所定の回路を基板2上に設けて、複数の発光ダイオード1のP型半導層11およびN型半導層12を通電状態にするとともに、導電体3と電気的に接続されていないP型半導層11およびN型半導層12をそれぞれ導電部4および導電部5と電気的に接続する。 Conductor 3 is a transparent body or an opaque material, the method of wire bonding or chip plating coating, a predetermined circuit consisting of the conductor 3 provided on the substrate 2, P type of the plurality of light emitting diodes 1 semiconductive layer 11 and N-type semiconductive layer 12 while energized, the conductor 3 is electrically connected to the P-type semiconductor layer is not 11 and N-type semiconductor layer 12 respectively conductive portion 4 and the conductive portion 5 and the electrical to connect to. 導電部4および導電部5を外部電源(図示しない)に接続することにより、導電部4および導電部5を、ワイヤーボンディング、チップメッキコーティングあるいはプリント回路板(PCB)の導電体の方式により外部電源と接続して、発光ダイオード1を点灯させる。 By connecting the conductive portion 4 and the conductive portion 5 to an external power source (not shown), the conductive portion 4 and the conductive portion 5, the external power source through a system of conductor wire bonding, the chip plating coating or printed circuit board (PCB) connected to the turns on the light emitting diode 1. 本発明は複数の発光ダイオード1のP型半導層11およびN型半導層12を直列の単一発光ダイオードにするため、比較的小さい電流で動作電圧を高めて、輝度を向上させることができる。 The present invention is for a plurality of light emitting diodes P-type semiconductive layer 11 of 1 and N-type semiconductor layer 12 in series of a single light emitting diode, to increase the operating voltage with a relatively small current, is possible to improve the brightness it can. そのため、一般家庭用電源に適用させることができるとともに、単一発光ダイオード1を、高輝度発光の光源とすることができる。 Therefore, it is possible to apply to a general household power source, a single light-emitting diode 1 can be a high-intensity light emission of the light source. このようにして、別途新たな電源設備を付け加えることを省略することができる。 In this way, it is possible to omit the adding separately new power supply equipment. そのため、未来の発光ダイオード(LED)は、2、3V、20〜500mAのパワーに制限されることなく、10Vあるいは100Vで、10mA、20mAのパワーとなる可能性がある。 Therefore, future light-emitting diode (LED), 2,3V, without being limited to the power of 20~500MA, at 10V or 100 V, may become 10 mA, and 20mA power. そして異なる動作条件下で、発光ダイオードに同様あるいは更に高いパワーを発生させることにより、発光ダイオード(LED)と外部電源設備の動作回路の複雑性を改善することができる。 And under different operating conditions, by generating the same or higher power to the light emitting diode can be improved and the light-emitting diode (LED) the complexity of the operation circuit of the external power supply equipment.
【0006】 [0006]
上で述べた複数の発光ダイオード1のP型半導層およびN型半導層は、基板の上方に設けることができる他、実際状況の必要に応じて基板の下方にも設けることができる(図4に示す)。 A plurality of P-type semiconductive layer of the light emitting diodes 1 and N type semi Shirubeso discussed above, in addition can be provided above the substrate can also be provided below the substrate according to the actual situation requires ( shown in FIG. 4). P型半導層11およびN型半導層12は直列方式で電気的に接続しても良く(図5に示す)、あるいは並列にしてから直列方式により電気的に接続しても良い(図6に示す)。 P-type semiconductive layer 11 and the N-type semiconductor layer 12 may be electrically connected in a serial fashion (shown in FIG. 5), or by a serial fashion from the parallel may be electrically connected (FIG. shown in 6).
【0007】 [0007]
以上のごとく、この発明を好適な実施形態により開示したが、もとより、この発明を限定するためのものではなく、同業者であれば容易に理解できるように、この発明の技術思想の範囲において、適当な変更ならびに修正が当然なされうるものであるから、その特許の権利保護の範囲は、請求の範囲および、それと均等な領域を基準として定めなければならない。 As described above, has been disclosed the invention in a preferred embodiment, as well, not intended to limit the invention, as can be readily appreciated by those skilled in the art, in view of the foregoing, since the appropriate changes and modifications are those that can be naturally made, the scope of protection of the rights of the patent shall be determined claims and their equivalents.
【0008】 [0008]
【発明の効果】 【Effect of the invention】
発光ダイオードチップの直列構造を提供して、発光ダイオード内部で等価直列方式を利用することにより、単一チップ(LED)の発光輝度および動作電圧を高めることができる。 Providing a serial structure of a light-emitting diode chips, by utilizing an equivalent series manner within the light emitting diode, it is possible to enhance the emission luminance and an operating voltage of a single chip (LED).
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】本発明にかかる、封入された発光ダイオードの平面図である。 [1] according to the present invention, it is a plan view of the encapsulated light emitting diode.
【図2】本発明にかかる、基板の配置図である。 [2] according to the present invention, a layout view of a substrate.
【図3】本発明にかかる、基板の側面図である。 [3] according to the present invention, it is a side view of the substrate.
【図4】本発明のもう一つの実施例にかかる、基板の側面図である。 According to another embodiment of the present invention; FIG is a side view of the substrate.
【図5】本発明にかかる、直列状態の等価回路を示す回路図である。 [5] according to the present invention, it is a circuit diagram showing an equivalent circuit of a series state.
【図6】本発明にかかる、直列および並列状態の等価回路を示す回路図である。 [6] according to the present invention, it is a circuit diagram showing an equivalent circuit of the series and parallel states.
【図7】一般の大型チップを示す平面図である。 7 is a plan view showing a general large chips.
【図8】一般の大型チップの等価回路を示す回路図である。 8 is a circuit diagram showing an equivalent circuit of a general large chips.
【符号の説明】 DESCRIPTION OF SYMBOLS
1 発光ダイオード11 P型半導層12 N型半導層2 基板3 導電体4 導電部5 導電部 1 light-emitting diodes 11 P-type semiconductive layer 12 N-type semiconductor layer 2 substrate 3 conductor 4 conductor 5 conductive portion

Claims (9)

  1. 発光ダイオードチップが、基板上に形成されたP型半導層とN型半導層とからなり、 Emitting diode chip, composed of a P-type semiconductive layer and the N-type semiconductor layer formed on a substrate,
    前記基板上に二次元アレイの方式により複数の発光ダイオードが配置されて、前記複数の発光ダイオードのP型半導層とN型半導層が、導電体により電気的に接続されて、前記した複数の発光ダイオードのP、N型半導層を直列方式により導通状態にするとともに、該導電体と電気的に接続していない端末のP、N型半導層をそれぞれ導電部と電気的に接続して外部電源に接続し、このようにして、前記発光ダイオードの単一チップの高輝度化と共に、高電圧、低電流による作動を可能として電源設備の負荷を低減した、発光ダイオードチップの直列構造。 Are arranged a plurality of light emitting diodes by method of the two-dimensional array on the substrate, P-type semiconductive layer and the N-type semiconductor layer of the plurality of light emitting diodes, are electrically connected by a conductor, and the P of the plurality of light emitting diodes, as well as in a conducting state by a serial manner the N-type semiconductor layer, P of the terminal that is not the electrically conductor electrically connected, N-type semiconductor layer and electrically each conductive portion connected to an external power source connected, in this way, together with the high brightness of the single chip of the light emitting diode, a high voltage, and reducing the load of the power supply equipment as permit operation with low current, the series of light-emitting diode chips Construction.
  2. 前記基板が絶縁材質からなるものである、請求項1記載の発光ダイオードチップの直列構造。 Series configuration of the substrate is made of an insulating material, the light emitting diode chip according to claim 1, wherein.
  3. 前記基板が透明体あるいは不透明体である、請求項1記載の発光ダイオードチップの直列構造。 Series configuration of the substrate is a transparent body or an opaque, light-emitting diode chip according to claim 1, wherein.
  4. 前記した複数の発光ダイオードのP型半導層およびN型半導層は、チップメッキコーティング方式により直列の電気的接続が行われるものである、請求項1記載の発光ダイオードチップの直列構造。 Said plurality of P-type semiconductive layer and N type semi Shirubeso emitting diode is one in which the electrical connection of the series is carried out by chip plating coating method, the series structure of a light-emitting diode chip according to claim 1, wherein.
  5. 前記した複数の発光ダイオードのP型半導層およびN型半導層を、並列にしてから直列の電気的接続を行うものである、請求項1記載の発光ダイオードチップの直列構造。 P-type semiconductive layer and N-type semiconductor layer, and performs series electrical connection from the parallel, serial structure of a light-emitting diode chip according to claim 1, wherein the plurality of light emitting diodes described above.
  6. 前記導電体が透明体である、請求項1記載の発光ダイオードチップの直列構造。 Series configurations of the conductor is a transparent body, the light emitting diode chip according to claim 1, wherein.
  7. 前記導電体が不透明体である、請求項1記載の発光ダイオードチップの直列構造。 Series configurations of the conductor is opaque, the light emitting diode chip according to claim 1, wherein.
  8. 前記導電体が、ワイヤーボンディング方式あるいはチップ製造工程のメッキコーティング方式により、所定回路を前記チップ基板上に設けるものである、請求項1記載の発光ダイオードチップの直列構造。 The conductor, the plating coating method of the wire bonding method or chip manufacturing process, in which providing a predetermined circuit on the chip substrate, the series structure of a light-emitting diode chip according to claim 1, wherein.
  9. 前記したP型半導層およびN型半導層を、実際状況の必要に応じて基板の上あるいは基板の下に設けるものである、請求項1記載の発光ダイオードチップの直列構造。 Wherein the P-type semiconductor layer and an N-type semiconductor layer, but if the actual situation needs to be provided under the top or the substrate of the substrate, the series structure of a light-emitting diode chip according to claim 1, wherein.
JP2002168148A 2002-06-10 2002-06-10 Series connection of light emitting diode chip Pending JP2004014899A (en)

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WO2007018360A1 (en) * 2005-08-09 2007-02-15 Seoul Opto Device Co., Ltd. Ac light emitting diode and method for fabricating the same
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US7560738B2 (en) 2003-07-04 2009-07-14 Epistar Corporation Light-emitting diode array having an adhesive layer
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US9391118B2 (en) 2007-01-22 2016-07-12 Cree, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
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