TW200831236A - Method for producing long polishing pad - Google Patents
Method for producing long polishing pad Download PDFInfo
- Publication number
- TW200831236A TW200831236A TW096138447A TW96138447A TW200831236A TW 200831236 A TW200831236 A TW 200831236A TW 096138447 A TW096138447 A TW 096138447A TW 96138447 A TW96138447 A TW 96138447A TW 200831236 A TW200831236 A TW 200831236A
- Authority
- TW
- Taiwan
- Prior art keywords
- long
- field
- light
- bubble
- grinding
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C2793/00—Shaping techniques involving a cutting or machining operation
- B29C2793/0009—Cutting out
- B29C2793/0018—Cutting out for making a hole
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C2793/00—Shaping techniques involving a cutting or machining operation
- B29C2793/0027—Cutting off
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
- B29C65/50—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding using adhesive tape, e.g. thermoplastic tape; using threads or the like
- B29C65/5057—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding using adhesive tape, e.g. thermoplastic tape; using threads or the like positioned between the surfaces to be joined
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
- B29C65/50—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding using adhesive tape, e.g. thermoplastic tape; using threads or the like
- B29C65/5092—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding using adhesive tape, e.g. thermoplastic tape; using threads or the like characterised by the tape handling mechanisms, e.g. using vacuum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/40—General aspects of joining substantially flat articles, e.g. plates, sheets or web-like materials; Making flat seams in tubular or hollow articles; Joining single elements to substantially flat surfaces
- B29C66/41—Joining substantially flat articles ; Making flat seams in tubular or hollow articles
- B29C66/45—Joining of substantially the whole surface of the articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/40—General aspects of joining substantially flat articles, e.g. plates, sheets or web-like materials; Making flat seams in tubular or hollow articles; Joining single elements to substantially flat surfaces
- B29C66/47—Joining single elements to sheets, plates or other substantially flat surfaces
- B29C66/472—Joining single elements to sheets, plates or other substantially flat surfaces said single elements being substantially flat
- B29C66/4722—Fixing strips to surfaces other than edge faces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2001/00—Use of cellulose, modified cellulose or cellulose derivatives, e.g. viscose, as moulding material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2023/00—Use of polyalkenes or derivatives thereof as moulding material
- B29K2023/04—Polymers of ethylene
- B29K2023/06—PE, i.e. polyethylene
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2023/00—Use of polyalkenes or derivatives thereof as moulding material
- B29K2023/10—Polymers of propylene
- B29K2023/12—PP, i.e. polypropylene
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2025/00—Use of polymers of vinyl-aromatic compounds or derivatives thereof as moulding material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2027/00—Use of polyvinylhalogenides or derivatives thereof as moulding material
- B29K2027/06—PVC, i.e. polyvinylchloride
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2027/00—Use of polyvinylhalogenides or derivatives thereof as moulding material
- B29K2027/12—Use of polyvinylhalogenides or derivatives thereof as moulding material containing fluorine
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2029/00—Use of polyvinylalcohols, polyvinylethers, polyvinylaldehydes, polyvinylketones or polyvinylketals or derivatives thereof as moulding material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2067/00—Use of polyesters or derivatives thereof, as moulding material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2069/00—Use of PC, i.e. polycarbonates or derivatives thereof, as moulding material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2071/00—Use of polyethers, e.g. PEEK, i.e. polyether-etherketone or PEK, i.e. polyetherketone or derivatives thereof, as moulding material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2075/00—Use of PU, i.e. polyureas or polyurethanes or derivatives thereof, as moulding material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2077/00—Use of PA, i.e. polyamides, e.g. polyesteramides or derivatives thereof, as moulding material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
- B29K2079/08—PI, i.e. polyimides or derivatives thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
- B29K2079/08—PI, i.e. polyimides or derivatives thereof
- B29K2079/085—Thermoplastic polyimides, e.g. polyesterimides, PEI, i.e. polyetherimides, or polyamideimides; Derivatives thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2081/00—Use of polymers having sulfur, with or without nitrogen, oxygen or carbon only, in the main chain, as moulding material
- B29K2081/06—PSU, i.e. polysulfones; PES, i.e. polyethersulfones or derivatives thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0018—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular optical properties, e.g. fluorescent or phosphorescent
- B29K2995/0026—Transparent
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
200831236 、 41 九、發明說明: 【發明所屬之技術領域3 發明領域 本發明係有關於一種長研磨墊之製造方法,該長研磨 5 墊可安定且以高研磨效率進行透鏡、反射鏡等光學材料或 石夕晶圓、硬碟用玻璃基板、鋁基板及一般金屬研磨加工等 要求高度表面平坦性之材料的平坦化加工。藉由本發明之 製造方法所得到之長研磨墊特別適合使用在將矽晶圓及於 • 該矽晶圓上形成有氧化物層、金屬層等之元件於進一步地 10 積層、形成該等氧化物層或金屬層前進行平坦化之程序中。 發明背景 於製造半導體裝置時,係進行於晶圓表面形成導電性 膜且藉由微影成像、蝕刻等形成配線層之程序,或於配線 15 層上形成層間絕緣膜之程序等,藉由該等程序,於晶圓表 面會產生由金屬等之導電體或絕緣體所構成之凹凸。近年 來,以半導體積體電路之高密度化為目的而進行配線之微 細化或多層配線化,使晶圓表面之凹凸平坦化之技術隨之 變得重要。 20 使晶圓表面之凹凸平坦化之方法一般係採用化學機械 磨光(以後稱作CMP),CMP係一種在將晶圓之被研磨面抵 壓於研磨墊之研磨面之狀態下使用分散有磨料之漿液狀研 磨劑(以後稱作漿液)進行研磨之技術。舉例言之,如第1圖 所示,一般在CMP中所使用之研磨裝置包含有:研磨定盤 5 200831236 2,係用以支持研磨墊i者;支持台(磨光頭)5,係用以支持 被研磨材(半導體晶圓)4者;襯墊材料,係用以進行晶圓之 均一加壓者;及研磨劑之供給機構。又,舉例言之,研磨 墊1係藉由以雙面膠帶來黏貼而安裝於研磨定盤2上,又, 5研磨足盤2與支持台5係配置成所分別支持之研磨塾1與被 研磨材4呈相對狀態,且分別具有旋轉軸6、7,又,於支持 台5側没置有用以將被研磨材4抵壓於研磨墊丨之加壓機構。 以往此種研磨墊係藉由如下述方法等批次方式來製 造:1)使樹脂材料流入模具中而製作樹脂塊,並藉由切片 1〇機將該樹脂塊切片來製造;2)藉由使樹脂材料流入模具中 並按壓而作成薄片狀來製造;3)使構成原料之樹脂溶解, 並自T型模押出成形而直接作成片狀來製造。舉例言之,專 利文獻1係藉由反應射出成形法來製造研磨用墊。 又,於積層研磨墊時,由於係藉由以接著劑或雙面膠 15帶黏合利用前述方法所得到之研磨層或緩衝層等複數樹脂 片來製造,因此具有製造程序多且生產性差之問題。為了 解決該問題,於專利文獻2中使用押出機來製造積層研磨用 整0 又,為了防止起因於批次方式之製造方法所造成之硬 2〇度或氣泡大小等之誤差,揭示有一種連續地製造聚胺基曱 酸酯·聚脲研磨片材之方法(專利文獻3),詳而言之,其係 一種混合聚胺基甲酸酯原料與具有300μπι以下之粒子徑之 微粉末或有機發泡劑,且於一對履帶工作面皮帶間吐出該 混合物ϋ使其流延’然後藉由加熱機構進行該混合物之聚 6 200831236 合反應,並自工作面皮帶分離所生成之片狀成形物而得到 研磨片材之方法。 另一方面,於高精度研磨中所使用之研磨墊一般係使 用聚胺基甲酸酯發泡體片,然而,雖然聚胺基甲酸酯發泡 5 體片局部之平坦化能力優異,但是缓衝性卻不足,因此不 易賦予晶圓全面均一之壓力,故,通常會在聚胺基甲酸酯 發泡體片之背面另外設置柔軟之缓衝層,且作成積層研磨 墊來使用在研磨加工中,舉例言之,積層研磨墊已開發有 如下所述者。 10 目前揭示有一種研磨墊,該研磨墊係積層較硬之第一 層與較軟之第二層,且於該第一層之研磨面設置有預定間 距之溝或預定形狀之突起(專利文獻4)。 另有一種研磨布,該研磨布包含有:第1片狀構件,係 具有彈性且於表面形成凹凸者;及第2片狀構件,係設置於 15邊弟1片狀構件形成有凹凸之面上,且具有與被處理基板之 被研磨面相對之面者(專利文獻5)。 更有一種研磨墊,該研磨墊包含有:研磨層;及支持 層’係積層於該研磨層之一面,且為壓縮率大於該研磨層 之發泡體者(專利文獻6)。 20 然而,由於前述習知積層研磨墊係藉由雙面膠帶(黏著 劑層)黏合研磨層與緩衝層來製造,因此研磨中漿液會滲入 研磨層與緩衝層間而減弱雙面膠帶之黏著力.,結果,會有 研磨層與緩衝層剝離之問題。 又,在進行CMP時會有晶圓表面平坦度之判定問題, 7 200831236 即,必須偵測到達所希望之表面特性或平面狀 態之時間 •點。以往有關氧化膜之膜厚或研磨速度等係定期地處理測 試‘晶圓,且在確認結果後對構成製品之晶圓進行研磨處理。 然而,該方法會浪費用以處理測試晶圓之時間與成 5本,又,在完全未預先施行加工之測試晶圓與製品晶圓中, 研磨結果會因CMP特有之負荷效應而有所不同,若未實際 地加工製品晶圓,則將難以正確地預測加工結果。 故近來為了解決前述問題,要求一種於CMP處理時 可於當下债測出能得到所希望之表面特性或厚度之時間點 10的方法。此種偵測可使用各種方法,然而,若由測定精度 或於非接觸測定中之空間分辨能力之觀點來看,則以於旋 轉定盤内裝入利用雷射光之膜厚監測機構之光學摘測方法 (專利文獻7、專利文獻8)為主流。 具體而言’前述光學_方法係—種經由窗孔(透光領 15域)使光束越過研磨墊而照射到晶圓上,並藉由監測因該反 射所產生之干擾信號而偵測研磨終點之方法。 目前而言,一般係利用具有接近6〇〇11111之波長光的He —Ne雷射光或使用於38〇〜8〇〇11111具有波長光之鹵素燈的 白色光來作為光束。 20 此種方法係藉由監測晶圓表面層之厚度變化而得知表 面凹凸之近似深度來決定終點,並於此種厚度之變化與凹 凸之深度相等時結束CMP處理,又,亦揭示有各種利用此 種光學方法來進行之研磨終點偵測法及於該方法中所使用 之研磨墊。 8 200831236 舉例言之,目箭姐-士 則揭不有一種研磨墊,該研磨墊係至少 15刀,、有為111體且均質並可透過19Gnm至35GGnm之波長 光的透明χκ合物#(專利文獻9),另有—種插讀狀透明塞 研2墊(專利文獻1〇),且有_種具有與磨光面為同一面之 5透明塞的研磨塾(專利文獻U)。 目4也有用以使漿液不會自研磨領域與透 光=域之邊界(接縫)漏出之提案(專利文獻12、⑼,然而,BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a long polishing pad which can be stabilized and which is made of an optical material such as a lens or a mirror with high polishing efficiency. Or flattening processing of materials requiring high surface flatness such as Shihwa wafer, glass substrate for hard disk, aluminum substrate, and general metal polishing. The long polishing pad obtained by the manufacturing method of the present invention is particularly suitably used for forming an oxide layer, a metal layer or the like on a germanium wafer and a germanium wafer, and further layering the oxide to form the oxide. The process of planarization before the layer or metal layer. BACKGROUND OF THE INVENTION In the manufacture of a semiconductor device, a process of forming a conductive film on a surface of a wafer and forming a wiring layer by lithography, etching, or the like, or a process of forming an interlayer insulating film on the wiring 15 layer is performed by the method. In the program, irregularities made of a conductor or an insulator such as metal are generated on the surface of the wafer. In recent years, in order to increase the density of semiconductor integrated circuits, it is important to make wiring finer or multilayer wiring, and to flatten the unevenness on the surface of the wafer. 20 The method of flattening the unevenness on the surface of the wafer is generally a chemical mechanical polishing (hereinafter referred to as CMP), and the CMP is used in a state in which the polished surface of the wafer is pressed against the polishing surface of the polishing pad. Abrasive slurry abrasive (hereinafter referred to as slurry) is a technique for grinding. For example, as shown in FIG. 1 , the polishing apparatus generally used in CMP includes: a polishing plate 5 200831236 2 for supporting a polishing pad i; and a support table (buffing head) 5 for Supporting the material to be polished (semiconductor wafer); the spacer material is used to uniformly press the wafer; and the supply mechanism of the abrasive. Further, by way of example, the polishing pad 1 is attached to the polishing platen 2 by being adhered by a double-sided tape, and further, the polishing pad 2 and the support table 5 are arranged to be respectively supported by the polishing pad 1 and the quilt. The abrasive materials 4 are in a state of being opposed to each other and have rotation shafts 6 and 7, respectively, and a pressurizing mechanism for pressing the workpiece 4 against the polishing pad is not provided on the support table 5 side. Conventionally, such a polishing pad is manufactured by a batch method such as the following method: 1) a resin material is poured into a mold to form a resin block, and the resin block is sliced by a slicing machine; 2) The resin material is poured into a mold and pressed to form a sheet, and 3) is produced by dissolving a resin constituting the raw material, molding it from a T-die, and directly forming a sheet. For example, Patent Document 1 manufactures a polishing pad by a reaction injection molding method. Further, when the polishing pad is laminated, it is produced by bonding a plurality of resin sheets such as a polishing layer or a buffer layer obtained by the above method with an adhesive or a double-sided tape 15, so that there are many manufacturing processes and poor productivity. . In order to solve this problem, in Patent Document 2, an extruder is used to manufacture the integrated polishing 0, and in order to prevent errors due to the hardness of the batch method or the bubble size caused by the batch method, a continuous method is disclosed. A method for producing a polyamino phthalate-polyurea abrasive sheet (Patent Document 3), in detail, a mixed polyurethane material and a fine powder or organic having a particle diameter of 300 μm or less a foaming agent, and the mixture is spouted between a pair of crawler belts, and then cast, and then the mixture is reacted by a heating mechanism, and the sheet-like formed product is separated from the work surface belt. A method of obtaining a polished sheet is obtained. On the other hand, the polishing pad used in high-precision polishing generally uses a polyurethane foam sheet, however, although the polyurethane foam 5 body sheet has excellent localization ability, Since the cushioning property is insufficient, it is difficult to impart a uniform pressure to the wafer. Therefore, a soft buffer layer is usually provided on the back surface of the polyurethane foam sheet, and a laminated polishing pad is used for the polishing. In processing, for example, a laminated polishing pad has been developed as described below. 10 There is disclosed a polishing pad which is a hard first layer and a softer second layer, and is provided with a predetermined pitch groove or a predetermined shape protrusion on the ground surface of the first layer (Patent Document 4). Another type of polishing cloth comprising: a first sheet-like member having elasticity and having irregularities formed on a surface thereof; and a second sheet-like member provided on a side surface of the 15-sided member having a concave-convex surface In addition, it has a surface facing the surface to be polished of the substrate to be processed (Patent Document 5). Further, there is a polishing pad comprising: a polishing layer; and a support layer which is laminated on one surface of the polishing layer and which is a foam having a compression ratio larger than that of the polishing layer (Patent Document 6). 20 However, since the conventional laminated polishing pad is manufactured by bonding a polishing layer and a buffer layer by a double-sided tape (adhesive layer), the slurry in the polishing penetrates between the polishing layer and the buffer layer to weaken the adhesion of the double-sided tape. As a result, there is a problem that the polishing layer and the buffer layer are peeled off. Moreover, there is a problem of determining the flatness of the wafer surface when performing CMP, 7 200831236, that is, the time to reach the desired surface characteristic or planar state must be detected. Conventionally, the film thickness of the oxide film, the polishing rate, and the like are periodically processed to test the wafer, and after the result of the verification, the wafer constituting the product is polished. However, this method wastes time and processing of the test wafer, and in the test wafer and the product wafer which are not pre-processed at all, the grinding result will be different due to the CMP-specific load effect. If the product wafer is not actually processed, it will be difficult to accurately predict the processing result. Therefore, in order to solve the aforementioned problems, a method for measuring the time point 10 at which a desired surface characteristic or thickness can be obtained at the time of CMP processing is required. Various methods can be used for such detection. However, from the viewpoint of measurement accuracy or spatial resolution in non-contact measurement, an optical pickup for a film thickness monitoring mechanism using laser light is incorporated in a rotating fixed plate. The measurement method (Patent Document 7 and Patent Document 8) is the mainstream. Specifically, the aforementioned optical method is such that the light beam is irradiated onto the wafer through the window through the window (transmission collar 15 field), and the polishing end point is detected by monitoring the interference signal generated by the reflection. The method. At present, it is generally used as a light beam using He-Ne laser light having a wavelength of light of approximately 6〇〇11111 or white light of a halogen lamp having a wavelength of light of 38〇~8〇〇11111. 20 This method determines the end point by monitoring the thickness variation of the surface layer of the wafer to determine the approximate depth of the surface relief, and terminates the CMP treatment when the change in thickness is equal to the depth of the relief, and also discloses various A polishing endpoint detection method using such an optical method and a polishing pad used in the method. 8 200831236 For example, the eye-sister-shovel reveals that there is no polishing pad that is at least 15 knives, a transparent χ κ compound # which is 111-body and homogeneous and can transmit light of wavelengths from 19Gnm to 35GGnm. Patent Document 9) has another type of insert-like transparent plug 2 (patent document 1), and has a polishing crucible having 5 transparent plugs having the same surface as the polishing surface (Patent Document U). Item 4 is also useful in order to prevent the slurry from leaking out from the boundary between the polishing field and the light transmission field (Patent Document 12, (9), however,
;k等翻防漏片時漿液亦會自研磨領域與透光領域 之邊界(接縫)朝研磨層下部漏出,且槳液會堆積在該防漏片 10上而使光學終點偵測產生問題。 一 方法°亥方法係將第一樹脂棒或塞配置於液 15 20 狀第二樹脂中’並使前述第二翻旨硬化而製作成形物,且 將該成形物切片而製造透光領域與研磨領域—體化之研磨 塾(專利讀14),“,於前述製造方法巾,由於成形時起 口於兩材料間之熱收縮差之應力會殘留於兩材料之接著界 面’且於賴著界面容易_,因此會㈣料漏之虞。 尚有種方法,該方法係於將業經— 冷至預定溫«於前«經—錢火之窗孔外周供 墊材料’並將㈣窗孔與前述研料材料同時地進行二次 退火、錢將該成形物切片而製造研磨墊(專利文獻⑸,然 而,於前述製造方法中,在研磨墊材料硬化收縮時過度之 應力會施加於窗孔,且會有於窗孔中產生殘留應力變形或 因此’會損害窗孔之平坦性且有光學_精度 降低之虞。 9 200831236 又,為了防止漿液外漏,揭示有一種於上層墊與下層 塾間配置在上下面塗布有接著劑之透明膜的方法(專利文 獻16),然而’若於透光領域與透明膜間具有接著層,則由 於透光率會降低,因此光學偵測精度亦會有降低之虞。 專利文獻1 :日本專利特開2004 —42189號公報 專利文獻2:日本專利特開2003一220550號公報 專利文獻3 :曰本專利特開2〇〇4一169〇38號公報 專利文獻4:日本專利特開2〇〇3_53657號公報 專利文獻5:日本專利特開平1〇_329〇〇5號公報 專利文獻6:日本專利特開2〇〇4一254〇7號公報 專利文獻7 ··美國專利第5069002號說明書 專利文獻8 :美國專利第5〇81421號說明書 專利文獻9:曰本專利特表— 號公報 專利文獻10:日本專利特開平9 —7985號公報 專利文獻11:日本專利特開平1()一83977號公報 專利文獻12 :日本專利特開2〇〇1_291686號公報 專利文獻13 :日本專利特表2〇〇3_51〇826號公報 專利文獻Η :日本專利特開2005 — 210143號公報 專利文獻15 :日本專利特開2〇〇5 —354〇77號公報 專利文獻16 ··日本專利特開2〇〇3一68686號公報 【發明内容3 發明之揭示 發明所欲解決之課題 本發明之目的係提供一種可生產性良好地製造能防止 10 200831236 漿液外漏且光學彳貞測精度優異之長研磨墊之方法。 解決課題之手段 本發明人為了解決前述問題反覆銳意檢討之結果,& 現藉由以下所示之長研磨墊之製造方法可達成前述目發 5 致完成本發明。 、以 即,第1 — A之本發明之長研磨墊之製造方法包含有r 下程序:製作由聚胺基甲酸酯發泡體所構成之長研磨= 域,於前述長研磨領域形成由貫通孔與架部所構成之門、 部,製作比前述長研磨領域薄之凸狀長透光領域;將前述 10長透光領域設置於前述長研磨領域之開口部内;及將透; 支持膜黏合於前述長研磨領域之研磨裡面側。 第1 — B之本發明之長研磨墊之製造方法包含有以下浐 序:製作由聚胺基甲酸酯發泡體所構成之長研磨領域;= 長研磨領域之單侧且朝長度方向連續地形成架部;製作比 15前述長研磨領域薄之凸狀長透光領域;平行地配置二個前 述長研磨領域,使架部與架部相對,並形成開口部以插入 W述長透光領域;將前述長透光領域設置於前述開口部 内;及將透明支持膜黏合於前述長研磨領域之研磨裡面側。 若藉由前述製造方法,則可輕易地製造具有長透光領 2〇域之長研磨墊,又,由於透光領域及研磨領域係成形於透 明支持膜上,因此研磨時漿液不會自透明支持膜向下漏 出。又,由於本發明之長研磨墊係於長透光領域與透明支 持膜間具有空間部,因此,相較於使用接著劑黏合透光領 域與支持膜者,可具有優異之光學偵測精度,又,本發明 11 200831236 之長研磨墊亦可於透明支持膜之單面上積層緩衝層。 曰前述長透光領域最厚之部分的厚度宜為長研磨領域之 厚度的5〇〜9〇%。右小於5〇%,則會由於長研磨塾長時間之 使用而使長透光領域因磨損而消失或變得過薄,且無法構 .5成光學_或是„液外漏而有光學侧精度降低之傾 < 肖m若大㈣%,料有製造時紐光領域之 裡面與用以黏合透明支持膜之接著層接觸之虞,且於製造 上較不理想。 _ 第2本發明之長研純之製造方法包含有以下程序:藉 10由機械發泡法調製氣泡分散胺基甲酸醋組成物者;將透明 支持膜配置於長模内,並將具有注入孔及注入壁之透光領 域形成用模框配置於該支持膜上之預定位置者;於前述注 入孔内吐出透光領域形成材料,並使該透光領域形成材料 硬化而形成透光領域者;於前述注入孔外之前述透明支持 15膜上吐出前述氣泡分散胺基甲酸醋組成物,並使該氣泡分 • 冑胺基甲酸酯組成物硬化而形成研磨領域者;及將前述透 光領域形成用模框及長模脫模而製作於透光領域與研磨領 — 域間具有間隙之長研磨層者。 • 絲㈣述製造方法,則可_地製造具有透光領域 20之長研磨層,且可生產性良好地製造長研磨塾。又,由於 透光領域及研磨領域係成形於透明支持膜上,因此研磨時 漿液不會自透明支持膜向下漏出。又,由於本發明之透光 領域係直接形成(自接著)於透明支持膜上,因此,相較於使 用接著劑黏合透光領域與支持膜者,可具有優異之光學偵 12 200831236 測精度。再者,由於本發明之製造方法係形成為於透光領 域與研磨領域間設置有間隙,因此兩材料間不會殘存起因 於熱收缩差之應力,藉此,可解決如習知研磨塾般於研磨 兩構件目殘存應力㈣】離且使研磨特性㈣影響之缺 5點。所得到之長研磨層可本身單獨地作成長研磨塾曰,亦可 _ 於透明支持膜之單面上積層緩衝層而作成積層式長研磨 ^1 〇 爾述透光領域宜由熱硬化性樹脂所構成,特別是以熱 ^ *化性聚胺基曱酸_脂為佳,此時,由於可使透光領域 1〇形成材料及氣泡分散胺基甲酸醋組成物同時地熱硬化,因 此製造程序簡便。 丽述透光領域形成用模框之注入壁厚度宜為lmm以 下。庄入壁之厚度大於lmm時,透光領域與研磨領域間之 間隙會變得過寬且間隙容易積存漿液,因此會有容易產生 15 别痕之傾向。 第3~A之本發明之長研磨墊之製造方法包含有以下程 # 序··藉由機械發泡法調製氣泡分散胺基甲酸酯組成物;以 積層狀態將分隔件與透光領域配置於長模内;於未配置有 - 前述分隔件及透光領域之領域吐出前述氣泡分散胺基甲酸 - 2〇酿組成物’並使該氣泡分散胺基甲酸酯組成物硬化而製作 由聚胺基甲酸酯發泡體所構成之長研磨領域;自前述長研 磨領域剝離分隔件;及於前述長研磨領域業已剝離分隔件 之面側積層透明支持膜,並製作於透光領域與透明支持膜 間具有空間部之長研磨層。 13 200831236 若藉由前述製造方法,則可輕易地製造具有透光領域 之長研磨墊,又,由於長研磨領域係自接著於透光領域, 因此漿液不會滲入兩領域之界面。又,由於本發明之長研 磨塾係於透光領域與透明支持膜間具有空間部,因此,相 5較於使用接著劑黏合透光領域與支持膜者,可具有優異之 光學偵測精度。 w述分隔件及透光領域宜呈長形,藉由使用長形分隔 件及透光領域,不僅可使長研磨墊之製造更加簡便,且於 長研磨塾之長度方向可常時形成透光領域,因此由光學偵 10測之觀點來看亦較為理想。 , 為了防止研磨時因加壓所造成之透光領域之變形,前 述刀&件之見度宜為透光領域之寬度以下。 刖述透光領域之厚度宜為長研磨領域之厚度的50〜 90/〇若小於50% ’則會由於長研磨墊長時間之使用而使透 15光領域因磨損而消失或變得過薄,且無法構成光學價測或 疋因漿液外漏而有光學偵測精度降低之傾向。另 一方面, 若大於90% ’則會有製造時透光領域之裡面與用以黏合透 月支持膜之接著層接觸之虞,且於製造上較不理想。 第3 — B之本發明之長研磨墊之製造方法包含有以下程 20序:藉由機械發泡法調製氣泡分散胺基甲酸醋組成物;將 凹型透光領域配置於長模内,且使凹部形成於下侧 ;於未 配置有前述透光領域之領域吐出前述氣泡分散胺基甲酸酿 =物,並使該氣泡分散胺基甲酸㉚組餘硬化而製作由 κ胺基甲酸㈣續所構成之長研磨領域;及於前述透光 14 200831236 領域具有凹部之面侧積層透明支持膜,並製作於透光領域 與透明支持膜間具有空間部之長研磨層。 若藉由前述製造方法,則可輕易地製造具有透光領域 之長研磨墊’又,由於長研磨領域係自接著於透光領域, 5因此漿液不會滲入兩領域之界面,特別是由於第2本發明之 製造方法係使用與研磨領域相同厚度之凹型透光領域,因 此可抑制研磨時透光領域之變形,且不僅可提升光學偵測 精度’更可藉由與長研磨領域之接著面積之增加而進一步 地防止漿液之滲入。又,由於本發明之長研磨墊係於透光 10領域與透明支持膜間具有空間部,因此,相較於使用接著 劑黏合透光領域與支持膜者,可具有優異之光學偵測精度。 依據與4述相同之理由,前述透光領域宜呈長形。 月(J述凹部之深度宜為透光領域之厚度的1〇〜5〇%。若 小於10%,則會有製造時凹部之底面與用以黏合透明支持 15膜之接著層接觸之虞,且於製造上較不理想。另一方面, 若大於50%,則會由於長研磨墊長時間之使用而使透光領 域因磨損而肖失錢得㈣,且無法構絲學_或是因 漿液外漏而有光學偵測精度降低之傾向。 第3 — C之本發明之長研磨墊之製造方法包含有以下程 2〇序:藉由機械泡沫法調製氣泡分散胺基甲酸酯組成物丨送 出面材並以積層狀態將分隔件與透光領域配置於該面材之 内部;於未配置有分隔件及透光領域之前述面材上連續地 吐出刖述氣泡分散胺基甲酸酯組成物;於所吐出之前述氣 /包分散胺基甲酸酯組成物上積層其他面材;均勻地調整厚 15 200831236 度,並使氣泡分散胺基甲酸顆組成物硬化而製作麟 曱酸醋發泡體所構成之長研磨領域;自前述長研磨領_ 離面材及分隔件;及於前述長研磨領域業已剝離分隔件之 面側積層透明支持膜,並製作於透光領域與透明支持膜間 5 具有空間部之長研磨層。 依據與前述相同之理由,前述分隔件及透光領域宜呈 長形,又,依據與前述相同之理由,分隔件之寬度宜為透 光領域之寬度以下,又,依據與前述相同之理由,透光領 域之厚度宜為長研磨領域之厚度的%〜。 1〇 第3 —D之本發明之長研磨墊之製造方法包含有以下程 序:藉由機械泡珠法調製氣泡分散胺基甲酸醋組成物;= 出面材並將凹型透光領域配置於該面材之内部,且使凹部 形成於下侧,於未配置有前述透光領域之前述面材上連蟑 地吐出前述氣泡分散胺基甲酸酯組成物;於所吐出之前= 15氣泡分散胺基甲酸酯組成物上積層其他面材;均勻地,敕 厚度,並使氣泡分散胺基甲酸酯組成物硬化而製作由浐胺 基甲酸酯發泡體所構成之長研磨領域;自前述長研磨領域 剝離面材;及於前述透光領域具有凹部之面側積層透明支 持膜,並製作於透光領域與透明支持膜間具有空間部之長 20 研磨層。 第3 — E之本發明之長研磨墊之製造方法包含有以下^ 序:藉由機械泡沫法調製氣泡分散胺基曱酸酯組成物·,送 出透明支持膜並將凹型透光領域配置於該透明支持膜之0 部,且使凹部形成於下侧;於未配置有前述透光領域之前 16 200831236 述透明支持膜上連續地吐出前述氣泡分散胺基甲酸能組成 物;於所吐出之前述氣泡分散胺基甲酸酯組成物上積層面 材;均勻地調整厚度,並使氣泡分散胺基甲酸醋組成物硬 化而形成由聚胺基曱酸酯發泡體所構成之長研磨領域,並 5製作於透光領域與透明支持膜間具有空間部之長研磨層; 及自前述長研磨領域剝離面材。 依據與前述相同之理由,前述透光領域宜呈長形,又, 依據與前述相同之理由,凹部之深度宜為透光領域之厚度 的10〜50%。 1〇 若藉由前述製造方法,則可連續地製造長研磨層,且 可生產性良好地製造長研磨墊,又,所得到之長研磨墊具 有與前述相同之優異的機能。· 圖式簡單說明 弟1圖係顯示於CMP研磨中所使用之研磨裝置之一例 15之示意構造圖。 第2圖係顯示弟1本發明之長研磨墊截面之一例之示意 圖。 第3圖係顯示以預定間隔形成有多數溝之樹脂片例之 思圖。 2〇 第4圖係顯示以寬度方向切斷樹脂片時截面之一例之 示意圖。 第5圖係顯示第2本發明之長研磨墊截面之一例之示意 圖。 第6圖係顯示第2本發明之長研磨墊之製造程序例之示 17 200831236 5 意圖。 第7圖係顯示透光領域形成用模框之結構之一例之示 意圖。 第8圖係顯示第3本發明之長研磨墊截面之一例之示意 圖。 第9圖係顯示第3本發明之長研磨墊截面之一例之示意 % 圖。 第10圖係顯示以預定間隔形成有多數凹部之樹脂片例 之不意圖。 10 第11圖係顯示以寬度方向切斷樹脂片時截面之一例之 不意圖。 第12圖係顯示第3本發明之長研磨墊之製造程序示意 圖。 第13圖係顯示第3本發明之長研磨墊之製造程序示意 15 圖。 • 第14圖係顯示使用腹板型研磨裝置研磨半導體晶圓之 方法之示意圖。 第15圖係顯示使用直線型研磨裝置研磨半導體晶圓之 方法之示意圖。 20 第16圖係顯示使用往復型研磨裝置研磨半導體晶圓之 方法之示意圖。 1:實施方式3 發明之較佳實施形態 第2圖係第1本發明之長研磨墊之截面圖。長研磨領域9 18 200831236 係由具有微細氣泡之聚胺基甲酸賴發泡體所構成,由於聚 胺基曱酸醋具有優異之耐磨損性,且可藉由改變各種原料 組成而輕易地得到具有所期望物性之聚合物,因此作為研 磨領域之形成材料為理想的#剩_ 5 前述雜基甲酸s旨係由異氰―成分、多元醇成分(高 分子直多讀、低分子量乡元醇)及鏈延伸劑所構成。 異氰酸醋成分並無特殊之限制,可使用聚胺基甲酸醋 領域中公知之化合物,異氰酸酿成分可列舉如:2,4—甲苯 —異氰酸酯、2,6—甲苯二異氰酸酯、2,2,—二苯曱烷二異 〇氰酸酯、2,4’ —二笨甲烷二異氰酸酯、4,4,一二苯甲烷二異 氰酸酯、1,5—萘二異氰酸酯、p—伸苯基二異氰酸酯、 伸笨基二異氰酸酯、p—苯二甲基二異氰酸酯、苯二甲 基二異氰酸酯等芳族二異氰酸酯;伸乙基二異氰酸酯、2,2,4 〜三甲基六亞甲二異氰酸酯、1,6—六亞甲二異氰酸酯等脂 15肪族二異氰酸酯;丨,4—環己烧二異氰酸酯、4,4,一二環己 基甲烷二異氰酸酯、異佛爾酮二異氰酸酯、降冰片燒二異 氰酸酯等脂環族二異氰酸酯,又,該等異氰酸酯成分可使 用1種,亦可混合2種以上。 除了前述二異氰酸酯化合物外,異氰酸酯成分亦可使 20用3官能以上之多官能聚異氰酸酯化合物。多官能異氰酸酉旨 化合物有市售之德斯模都(DESMODUR) — N(拜耳公司製造) 或商品名多奈德(DURANATE)(旭化成工業公司製造)之一 系列二異氰酸醋加成體化合物。 前述異氰酸酯成分中,宜併用芳族二異氰酸酯與脂環 19 200831236 族二異氰酸酯,特別是宜併 甲烷二異氰酸酯。 用甲苯二異氰酸酯與二環己基 高分子量多元醇可列舉如:聚四亞甲細二醇所代表 之水醚夕7L醇’聚己二酸丁二醇⑽代表之㈣多元醇; 聚己内醋多元醇;以如聚己内醋之聚醋二醇與碳酸亞煙醋 之反應物等為例之聚料魏S旨多元醇 ;使碳酸次乙醋與 夕疋醇反應’接著使所得到之反應混合物與有機二綾酸反 應之聚_聚碳酸酉旨多元醇;及藉由聚經基化合物與芳基碳 西文商日之i旨置換反應所得到之聚碳酸酯多元醇等,又,該等 10尚分子量多元醇可單獨使用,亦可併用2種以上。When k is turned over, the slurry will leak from the boundary between the grinding field and the light-transmitting field (seam) toward the lower part of the polishing layer, and the slurry will accumulate on the leakage preventing sheet 10 to cause problems in optical end point detection. . In one method, the first resin rod or the plug is placed in the second resin of the liquid 15 20 shape, and the second compact is cured to form a molded product, and the molded product is sliced to produce a light-transmitting field and polishing. Field-body-grinding grinding 塾 (Patent Reading 14), "In the above-mentioned manufacturing method towel, the stress of the difference in heat shrinkage between the two materials during the forming will remain at the interface of the two materials" and the interface It is easy _, so it will (4) leaking. There is still a method, which is to pass the industry--cooling to the predetermined temperature «in front of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The material of the material is simultaneously subjected to secondary annealing, and the molded article is sliced to produce a polishing pad (Patent Document (5). However, in the above manufacturing method, excessive stress is applied to the window hole when the polishing pad material hardens and shrinks, and There will be residual stress deformation in the window hole or the result that the flatness of the window hole will be impaired and the optical precision will be reduced. 9 200831236 Moreover, in order to prevent leakage of the slurry, a configuration between the upper layer and the lower layer is disclosed. above A method of applying a transparent film of an adhesive to a surface (Patent Document 16), however, if there is an adhesive layer between the light-transmitting field and the transparent film, since the light transmittance is lowered, the optical detection accuracy is also lowered. Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-42189 (Patent Document 2) Japanese Patent Laid-Open Publication No. Hei No. Hei. No. Hei. No. Hei. Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. U.S. Patent No. 5,609,902, Patent Document 8: U.S. Patent No. 5,814,421, Patent Document 9: Japanese Patent Application Laid-Open Publication No. JP-A No. Hei 9-9985 Patent Document 11: Japanese Patent Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Gazette [Patent 15] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. It is an object of the present invention to provide a method for producing a long polishing pad which can prevent the leakage of 10 200831236 slurry and which is excellent in optical measurement accuracy. The means for solving the problem is the result of the intensive review by the present inventors in order to solve the above problems. The present invention can be achieved by the above-described method of manufacturing a long polishing pad as shown below. That is, the method for producing the long polishing pad of the first aspect of the present invention includes the following procedure: producing a long polishing = domain composed of a polyurethane foam, which is formed in the long-grinding field described above. a door and a portion formed by the through hole and the frame portion are formed in a convex long light transmission field which is thinner than the long polishing field; the 10 long light transmission region is disposed in the opening portion of the long polishing field; and the transparent film is supported; Adhesive to the inner side of the grinding in the long-grinding field. The method for producing a long polishing pad of the present invention according to the first to the sixth aspect includes the following steps: producing a long-grinding field composed of a polyurethane foam; = one side of the long-grinding field and continuous in the longitudinal direction Forming a frame portion; forming a convex long light-transmissive field thinner than the long-grinding field of 15; arranging two of the long-grinding fields in parallel so that the frame portion faces the frame portion, and forming an opening portion for inserting the long-length light transmission a field in which the long light transmission region is provided in the opening portion; and a transparent support film is bonded to the polishing inner side of the long polishing field. According to the above manufacturing method, the long polishing pad having the long light-transmitting collar can be easily manufactured, and since the light-transmitting field and the polishing field are formed on the transparent supporting film, the slurry is not transparent when ground. The support film leaks downward. Moreover, since the long polishing pad of the present invention has a space portion between the long light-transmitting field and the transparent support film, it can have excellent optical detection accuracy as compared with the use of an adhesive to bond the light-transmitting field and the support film. Further, the long polishing pad of the present invention 11 200831236 may also have a buffer layer laminated on one side of the transparent support film. The thickness of the thickest portion of the long light transmission field is preferably 5 〇 to 9 〇% of the thickness of the long abrasive field. If the right side is less than 5〇%, the long light transmission field will disappear or become too thin due to wear due to long-term use, and it is impossible to construct a 50% optical _ or „liquid leakage and optical side precision. The lowering of the tilt < mm if the large (four)%, is expected to be in contact with the adhesive layer of the transparent support film during the manufacture of the New Light field, and is less desirable in manufacturing. _ 2nd invention The pure manufacturing method comprises the following steps: the foam-dispersed urethane composition is prepared by mechanical foaming method; the transparent support film is disposed in the long mold, and the transparent field having the injection hole and the injection wall is provided. Forming a mold frame at a predetermined position on the support film; discharging a light-transmitting region forming material in the injection hole, and curing the light-transmitting region forming material to form a light-transmitting region; and the aforementioned outside the injection hole Dissolving the bubble-dispersed urethane composition on the transparent support 15 film, and curing the bubble-based urethane composition to form a polishing field; and forming a pattern and a long mold for forming the light-transmitting field Demoulding For the long-grinding layer with a gap between the light-transmitting field and the grinding collar--the field. • The wire (4) describes the manufacturing method, and the long-grinding layer having the light-transmitting field 20 can be manufactured, and the long-grinding boring can be manufactured with good productivity. Moreover, since the light-transmitting field and the grinding field are formed on the transparent support film, the slurry does not leak downward from the transparent support film during polishing. Moreover, since the light-transmitting field of the present invention is directly formed (self-adhesive) in the transparent Supporting the film, therefore, compared with the use of an adhesive to bond the light-transmitting field and the support film, it can have excellent optical detection 12 200831236. Further, since the manufacturing method of the present invention is formed in the field of light transmission and grinding There is a gap between the fields, so that the stress caused by the difference in heat shrinkage does not remain between the two materials, thereby solving the problem of the residual stress of the two components as in the conventional grinding process (4). At 5 o'clock, the obtained long polishing layer can be separately grown and polished, or a laminated buffer layer can be formed on one side of the transparent support film to form a laminated long-length polishing ^1 The light field is preferably composed of a thermosetting resin, in particular, a heat-reducing polyamine phthalic acid _lipid. In this case, since the light-transmitting material can be formed into a material and the bubble-dispersed amino carboxylic acid vinegar can be composed. The material is simultaneously thermally hardened, so the manufacturing process is simple. The thickness of the injection wall of the mold frame for forming the light-transmissive field is preferably less than 1 mm. When the thickness of the wall is greater than 1 mm, the gap between the light-transmitting field and the grinding field may become The slurry is easy to accumulate in the width and the gap, so there is a tendency to easily generate 15 marks. The manufacturing method of the long polishing pad of the present invention according to the third to third embodiments includes the following procedure: [Preparation of bubble-dispersed amine by mechanical foaming method] a urethane composition; the separator and the light-transmitting region are disposed in the long mold in a laminated state; and the bubble-dispersed urethane- 2 brewing composition is discharged in a field in which the separator and the light-transmitting region are not disposed 'The cell-dispersed urethane composition is cured to form a long-grinding field composed of a polyurethane foam; the separator is peeled off from the long-grinding field; and the long-grinding field has been stripped Side surface of the spacer member of the transparent support film is laminated, and produced a long film having a space between the portion of the polishing layer and the transparent support of the light-transmitting art. 13 200831236 By the above manufacturing method, a long polishing pad having a light-transmitting field can be easily manufactured, and since the long-polishing field is followed by the light-transmitting field, the slurry does not penetrate into the interface between the two fields. Further, since the long-grinding honing method of the present invention has a space portion between the light-transmitting field and the transparent supporting film, the phase 5 can have excellent optical detection accuracy as compared with the use of an adhesive for bonding the light-transmitting field and the supporting film. w The partition and the light-transmissive area should be long. By using the long-shaped partition and the light-transmissive field, not only the long polishing pad can be manufactured more easily, but also the light-transmitting field can be formed in the long-length direction of the long-grinding crucible. Therefore, it is also ideal from the point of view of optical detection. In order to prevent deformation of the light-transmitting field caused by pressurization during grinding, the visibility of the above-mentioned knife & parts should be below the width of the light-transmitting field. It should be noted that the thickness of the light-transmissive field should be 50~90/〇 if less than 50% of the thickness of the long-grinding field, and the surface of the 15-light field will disappear or become too thin due to wear for a long time. However, it is not possible to constitute an optical price measurement or a tendency to reduce the optical detection accuracy due to leakage of the slurry. On the other hand, if it is more than 90%, there is a possibility that the inside of the light-transmitting field at the time of manufacture is in contact with the adhesive layer for bonding the moon-supporting film, and it is not preferable in terms of manufacturing. The method for manufacturing the long polishing pad of the present invention according to the third to fourth invention includes the following steps: modulating the bubble-dispersed urethane composition by a mechanical foaming method; arranging the concave light-transmitting region in the long mold, and The concave portion is formed on the lower side; the bubble-dispersed urethane-based material is discharged in a region where the light-transmitting region is not disposed, and the bubble-dispersed aminocarboxylic acid 30 group is hardened to form a κ-aminoformic acid (IV). The long-grinding field; and the surface-side transparent support film having a concave portion in the field of the light transmission 14 200831236, and a long polishing layer having a space portion between the light-transmitting region and the transparent support film. According to the above manufacturing method, a long polishing pad having a light-transmitting field can be easily manufactured. Further, since the long-polishing field is followed by the light-transmitting field, 5 the slurry does not penetrate into the interface between the two fields, especially due to the 2 The manufacturing method of the present invention uses the concave light-transmitting field of the same thickness as the polishing field, thereby suppressing the deformation of the light-transmitting field during polishing, and not only improving the optical detection accuracy but also by the area of the long-grinding field. The increase further prevents the penetration of the slurry. Further, since the long polishing pad of the present invention has a space portion between the light-transmitting 10 field and the transparent support film, it can have excellent optical detection accuracy as compared with the use of an adhesive for bonding the light-transmitting field and the support film. According to the same reason as described in the above, the light-transmitting field is preferably elongated. The depth of the recessed portion is preferably 1〇~5〇% of the thickness of the light-transmitting field. If it is less than 10%, there is a contact between the bottom surface of the concave portion and the adhesive layer for bonding the transparent support 15 film during manufacture. On the other hand, if it is more than 50%, the long-term use of the long polishing pad will cause the light-transmissive field to be lost due to wear and tear (4), and it is impossible to construct the wire _ or The leakage of the slurry has a tendency to reduce the optical detection accuracy. The method for manufacturing the long polishing pad of the present invention according to the third to third embodiments includes the following procedure: modulating the bubble-dispersed urethane composition by a mechanical foam method丨 丨 丨 并 并 并 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨a composition; laminating other face materials on the gas/package-dispersed urethane composition discharged; uniformly adjusting the thickness of 15 200831236 degrees, and hardening the bubble-dispersed amino acid composition to prepare linoleic acid vinegar Long grinding field composed of foam; The long-grinding collar _ separating surface material and the separator; and the surface-side transparent support film in which the separator is peeled off in the long-grinding field, and a long-grinding layer having a space portion between the light-transmitting region and the transparent support film. For the same reason as described above, the partition member and the light-transmitting region are preferably elongated, and the width of the partition member is preferably less than the width of the light-transmitting region for the same reason as described above, and for the same reason as described above. The thickness of the light-transmissive field is preferably % of the thickness of the long-grinding field. The manufacturing method of the long-type polishing pad of the present invention includes the following procedure: modulating the bubble-dispersed amino carboxylic acid vinegar by the mechanical bubble method a composition; the surface material is disposed, and the concave light-transmissive region is disposed inside the surface material, and the concave portion is formed on the lower side, and the bubble-dispersed amine group is discharged continuously on the surface material not disposed in the light-transmitting region a formate composition; prior to the discharge = 15 bubble-dispersed urethane composition, another layer of material is laminated; uniformly, the thickness of the crucible, and the bubble-dispersed urethane composition is hardened a long-grinding field composed of a urethane foam; a surface material peeled off from the long-grinding field; and a transparent support film having a concave side on the surface of the light-transmitting field, and is formed in the light-transmitting field and The transparent support film has a length of 20 polishing layers in the space portion. The method for producing the long polishing pad of the present invention according to the third to sixth includes the following steps: modulating the bubble-dispersed amino phthalate composition by a mechanical foam method, Sending a transparent support film and disposing the concave light-transmissive field in the 0 portion of the transparent support film, and forming the concave portion on the lower side; and continuously discharging the bubble dispersion on the transparent support film before the light-transmissive field is not disposed 16 200831236 An amine carboxylic acid composition; a layered material on the bubble-dispersed urethane composition discharged; uniformly adjusting the thickness, and hardening the bubble-dispersed urethane composition to form a polyamine citric acid A long polishing field composed of an ester foam, and a long polishing layer having a space portion between the light transmitting region and the transparent supporting film; and a surface material peeled off from the long polishing region. For the same reason as described above, the light-transmitting field is preferably elongated, and the depth of the concave portion is preferably 10 to 50% of the thickness of the light-transmitting field for the same reason as described above. According to the above manufacturing method, the long polishing layer can be continuously produced, and the long polishing pad can be produced with good productivity, and the long polishing pad obtained has the same excellent functions as described above. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic structural view showing an example 15 of a polishing apparatus used for CMP polishing. Fig. 2 is a schematic view showing an example of a cross section of the long polishing pad of the present invention. Fig. 3 is a view showing an example of a resin sheet in which a plurality of grooves are formed at predetermined intervals. 2〇 Fig. 4 is a view showing an example of a cross section when the resin sheet is cut in the width direction. Fig. 5 is a schematic view showing an example of a cross section of the long polishing pad of the second invention. Fig. 6 is a view showing an example of a manufacturing procedure of the long polishing pad of the second invention. Fig. 7 is a view showing an example of a structure of a mold frame for forming a light-transmitting region. Fig. 8 is a schematic view showing an example of a section of the long polishing pad of the third invention. Fig. 9 is a schematic view showing an example of a section of the long polishing pad of the third invention. Fig. 10 is a view showing an example of a resin sheet in which a plurality of concave portions are formed at predetermined intervals. 10 Fig. 11 is a view showing an example of a cross section when the resin sheet is cut in the width direction. Fig. 12 is a view showing the manufacturing procedure of the long polishing pad of the third invention. Fig. 13 is a view showing the manufacturing procedure of the long polishing pad of the third invention. • Fig. 14 is a schematic view showing a method of grinding a semiconductor wafer using a web type polishing apparatus. Fig. 15 is a view showing a method of grinding a semiconductor wafer using a linear type polishing apparatus. 20 Fig. 16 is a schematic view showing a method of polishing a semiconductor wafer using a reciprocating type polishing apparatus. 1: Embodiment 3 BEST MODE FOR CARRYING OUT THE INVENTION Fig. 2 is a cross-sectional view showing a long polishing pad of the first invention. The long-grinding field 9 18 200831236 is composed of a polyurethane foam having fine bubbles, which is easily obtained by changing various raw material compositions because of the excellent abrasion resistance of polyamine phthalic acid vinegar. The polymer having the desired physical properties is ideal as a material for forming the polishing field. #余_5 The above heteroformic acid s is intended to be composed of an isocyanide-component, a polyol component (polymer direct reading, low molecular weight domestic alcohol) And a chain extender. The isocyanuric acid component is not particularly limited, and a compound known in the field of polyurethane vinegar can be used. Examples of the isocyanate-growing component include 2,4-toluene-isocyanate, 2,6-toluene diisocyanate, and 2 , 2,-diphenylnonane diisocyanate, 2,4'-di-methane methane diisocyanate, 4,4, diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene Aromatic diisocyanate such as diisocyanate, benzoyl diisocyanate, p-phthaldimethyl diisocyanate, benzodimethyl diisocyanate; ethyl diisocyanate, 2,2,4~trimethylhexamethylene diisocyanate , 1,6-hexamethylene diisocyanate, etc. 15 aliphatic diisocyanate; 丨, 4-cyclohexene diisocyanate, 4,4, dicyclohexylmethane diisocyanate, isophorone diisocyanate, norbornene An alicyclic diisocyanate such as a diisocyanate may be used alone or in combination of two or more. In addition to the aforementioned diisocyanate compound, the isocyanate component may be a compound having a trifunctional or higher polyfunctional polyisocyanate compound. The polyfunctional isocyanate compound is commercially available as DESMODUR - N (manufactured by Bayer) or trade name DURANATE (manufactured by Asahi Kasei Industrial Co., Ltd.). Adult compound. Among the above isocyanate components, it is preferred to use an aromatic diisocyanate together with an alicyclic 19 200831236 diisocyanate, particularly a methane diisocyanate. Examples of the toluene diisocyanate and the dicyclohexyl high molecular weight polyol include, for example, a water ether represented by polytetramethylene fine glycol, a 7L alcohol, a polybutylene adipate (10) represented by (iv) a polyhydric alcohol; a polyhydric alcohol; a polymer such as a polyacetic acid vinegar and a reaction product of a cigarette of propylene carbonate, etc., for example, a poly-alcohol; a reaction of a reaction of a sub-glycolic acid with a succinyl alcohol; and then obtaining the obtained a poly-polycarbonate-reactive polyol in which a reaction mixture is reacted with an organic dicarboxylic acid; and a polycarbonate polyol obtained by a displacement reaction of a poly-based compound and an aryl-based carbon These 10 molecular weight polyols may be used singly or in combination of two or more.
而分子量多元醇之數量平均分子量並無特殊之限制, τη ’若由所得到聚胺基甲酸酯樹脂之彈性特性等觀點來 看’則宜為500〜2000。若數量平均分子量小於5〇〇,則使 用該多元醇之聚胺基甲酸酯樹脂未具有充分之彈性特性而 15變成脆弱之聚合物,因此,藉由該聚胺基甲酸酯樹脂所製 造之研磨領域會變得過硬,旅成為晶圓表面刮痕之原因, 又’由於變得容易磨損,因此由研磨墊使用壽命之觀點來 看亦不理想。另一方面,若數量平均分子量大於2000,則 使用該多元醇之聚胺基甲酸酯樹脂會變得過軟,因此,藉 2〇 由該聚胺基甲酸酯樹脂所製造之研磨領域會有平坦化特性 差之傾向。 除了前述高分子量多元酵外’多元醇成分宜併用如後 述之低分子量多元醇,即:乙二醇、1,2—丙二醇、1,3〜丙 二醇、1,4一丁二醇、1,6—己一醇、新戊二醇、1,4 —環己 20 200831236 烷二甲醇、3—甲基一1,5—戊二醇、一縮二乙二醇、二縮 三乙二醇、1,4一雙(2—羥乙氧基)苯等。又,亦可使用乙二 胺、曱苯二胺、二笨曱烷二胺、二伸乙三胺等低分子量聚 胺。 5 多元醇成分中之高分子量多元醇與低分子量多元醇等 之比可依據由該等多元醇製造之研磨領域所要求之特性來 決定。 藉由預聚合物法製造聚胺基甲酸酯發泡體時,預聚合 • 物之硬化係使用鏈延伸劑,鏈延伸劑係至少具有2個以上活 10 性氫基之有機化合物,且活性氫基可列舉如:羥基、一級 或二級胺基、硫醇基(SH)等。具體而言,可列舉如:以4,4’ 一亞甲雙(〇—氯苯胺)(MOCA)、2,6—二氯一p—苯二胺、4,4’ —亞甲雙(2,3—二氯苯胺)、3,5—雙(甲硫基)一2,4一甲苯二 胺、3,5 —雙(甲硫基)一2,6—甲苯二胺、3,5—二乙基曱苯一 15 2,4 —二胺、3,5 —二乙基甲苯一2,6 —二胺、丙二醇一二一ρ 一胺基苯甲酸酯、1,2—雙(2—胺苯基硫)乙烷、4,4’一二胺 ® 基一3,3 ’ 一二乙基一5,5’ 一 二甲基二苯甲烷、N,N’ 一二一sec —丁基一 4,4’一二胺基二苯曱烷、3,3’一二乙基一 4,4’一二 胺基二苯甲烷、間苯二甲胺、N,N’一二一 sec—丁基一ρ — — 20 苯二胺、間苯二胺及對苯二甲胺等為例之聚胺類;或前述 低分子量多元醇或低分子量聚胺等,又,該等鏈延伸劑可 使用1種,亦可混合2種以上。 異氰酸酯成分、多元醇成分及鏈延伸劑之比可依照各 自之分子量或研磨領域之所期望物性等進行各種變更。為 21 200831236 了得到具有所期望研磨特性之研磨領域,異氰酸酯成分之 異氰酸酯基數相對於多元醇成分與鏈延伸劑之合計活性氫 基(經基+胺基)數宜為0.80〜1.2〇,且更為理想的是〇 99〜 1 · 15。異氣fee S曰基數為别述範圍外時,會產生硬化不良而 5無法得到所要求之比重及硬度,且會有研磨特性降低之傾 向0 聚胺基甲酸酯發泡體之製造可採用預聚合物法、一次 形成法中之任一者,然而,預先自異氰酸酯成分與多元醇 成分合成異氰酸酯末端預聚合物且使鏈延伸劑與其反應之 10預聚合物法,所得到之聚胺基曱酸酯之物理特性優異而較 為適合。 聚胺基甲酸酉旨發泡體之製造方法可列舉如:添加空心 珠之方法、機械發泡法(包含機械泡沫法)、化學發泡法等。 特別疋以使用為聚炫基矽氧燒與聚醚之共聚物且未含 15有活性氮基的石夕系界面活性劑之機械發泡法為佳。前述石夕 系界面活性劑可列舉如sh—192及L— 5340(東麗道康寧 (TORAYDOW CORMNG)矽公司製造)等適當之化合物。 以下說明製造由聚胺基曱酸6旨發泡體所構成之長研磨 領域之方法例,前述長研磨領域之製造方法包含有以下程 20 序。 1)製作異氰義末端縣合物之氣泡分餘之發泡程序 於異氰酸醋末端預聚合物(第1成分)中添加石夕系界面活 2劑,並於非反舰之存在下進行麟,同時使非反 應性氣體以微細氣泡分散而作成氣泡分散液。前述預聚合 22 200831236 物於常溫下為固體時,可預熱至適當溫度並熔融後使用。 2)硬化劑(鏈延伸劑)混合程序 於蝻述氣泡分散液中添加鏈延伸劑(第2成分),並混 合、攪拌而作成發泡反應液。 5 3)澆鱗程序 使前述發泡反應液流入長模中。 4)硬化程序 將業已流入長模中的發泡反應液加熱並使其反應硬 化。 1〇 用以形成前述微細氣泡之非反應性氣體宜為非可燃性 者,具體而言,可列舉如:氮、氧、二氧化碳、氮或氮等 稀有氣體或該等氣體之混合氣體,成本上最為理想的是使 用乾燥後除去水分之空氣。 將非反應性氣體作成微細氣泡狀而使其分散在含有矽 15系界面活性劑之第1成分中的授拌裝置並無特殊之限制,可 使用公知攪拌裝置,具體而言,可列舉如:高速攪拌器、 溶解器、雙軸行星型混合器(周轉混合器)等。攪拌裝置之攪 摔翼形狀亦無特殊之限制,然而,使用攪打器型授掉翼時 可得到微細氣泡且較為理想。 2〇 另’於發泡程序中作成氣泡分散液之攪拌及混合程序 中添加、混合鏈延伸劑之授拌使用不同之攪拌裝置亦為理 想之實施態樣。特別是混合程序中之擾拌亦可不是形成氣 泡之攪拌,且宜使用不會捲入大氣泡之攪拌裝置,又,此 種攪拌裝置宜為行星型混合器。發泡程序與混合程序之搜 23 200831236 摔裝置使用相同之攪拌裝置亦不成問題,且亦適合依需要 進订调整檀拌翼之旋轉速度等攪拌條件之調整而加以使 用。 1於聚胺基甲—發泡體之製造方法中,將使發泡反應 ⑨机人模中而反應至不會流動為止之發泡體進行加熱、後 . 固化係具有提升發泡體之誠特性之效果且極為適合。 又亦可作成使發泡反應液流入長模中而直接放入加熱烘 _ 纟目中來進行後固化之條件,由於在此種條件下熱亦不會立 刻傳送至反應成分,因此氣泡徑不會變大,又,若於常壓 10下進行硬化反應,則由於氣泡形狀安定,因此較為理想。 又,亦可藉由機械泡沫法調製發泡反應液,且送出面 材並於該面材上連續地吐出發泡反應液,同時均勻地調整 厚度,並藉由使發泡反應液硬化而連續地製作由聚胺基甲 酸酯發泡體所構成之長研磨領域。藉由機械泡沫法製作聚 15胺基甲酸酯發泡體時,吐出時之發泡反應液黏度宜為5〜 0 l〇Pa · s ° 又,前述聚胺基甲酸酯發泡體之平均氣泡徑宜為3〇〜 - 80μιη,且更為理想的是3〇〜60μηι。若脫離該範圍,則會有 • 研磨速度降低或研磨後之被研磨材(晶圓)的可平面性(平妇 20 性)降低之傾向。 前述聚胺基甲酸酯發泡體之比重宜為以〜丨·3。若比重 小於0.5,則研磨領域之表面強度會降低,且會有被研磨材 之可平面性降低之傾向,又,若大於1>3,則於研磨領域表 面之氣泡數會減少,且雖然可平面性良好,然而卻有研磨 24 200831236 速度降低之傾向。 前述聚胺基曱酸醋心包體之硬度藉&亞斯卡 (ASKER)D硬度計宜為45〜7G度。若亞斯卡d硬度小_ 度,則被研磨材之可平面性會降低,又,若大於7〇度,則 5雖然可平面性良好,然而卻有被研磨材之一致性(均一性) 降低之傾向。 '魏純域與被研歸接觸之研磨表面宜具有用以保 #、更新黎液之凹凸結構。雖然由發泡體所構成之研磨領 域於研磨表面具有許多開口且具有可保持、更新聚液之作 10用’然而,藉由於研磨表面形成凹凸結構,可進一步有效 地進行漿液之保持與更新,且可防止因與被研磨材間之吸 附所造成之被研磨材之破壞。凹凸結構係只要是可保持、 更新漿液之形狀者則無特殊之限制,舉例言之,可列舉如: X溝、XY格子溝、同心圓㈣、貫通孔、未貫通之孔、多 15角挺、圓柱、螺旋狀溝、偏心圓狀溝、放射狀溝及組合該 • 切者。又,該等凹凸結構一般為具有規則性者,然而, 為了構成理想之漿液保持性、更新性,亦可每在一定範圍 - 即改變溝間距、溝寬度'溝深度等。 π 長研磨領域之厚度並無特殊之限制,然而通常為0.8〜 且以1 2.5mm為佳。製作前述厚度之研磨領域的方 >可列舉如:使用帶鑛式或鉋式切片機將前述發泡體塊作 2預定厚度之方法;使樹織人具有預定厚度之模孔的長 Γ並使其硬狀枝;及使㈣布倾或片成形技術之 25 200831236 又,長研磨領域之厚度誤差宜為ΙΟΟμιη以下,厚度誤 差大於100_者會構成長研磨領域具有大幅起伏者,且會 產生對被研磨材之接觸狀態不同之部分,並對研磨特性造 成不良衫響。又,為了消除長研磨領域之厚度誤差,一般 5係於研磨初期使用業已電沈積、溶合有鑽石磨料之修整器 來修整研磨表面’然而,若大於前述範圍,則修整時間會 增長且會降低生產效率。 抑制長研磨領域之厚度誤差的方法可列舉如:藉由撤 光機將其表面進行拋光之方法。又,抛光時宜藉由粒度等 10不同之研磨材階段性地進行。 一長研磨領域之長度或寬度可依照所使用之研磨裝置適 當地調整,然而,長度通常為5〜15m,寬度通常為6〇〜 250cm。 於第1-A本發明之製造方法中,然後,於前述長研磨 Η領域9形成由貫通孔12與架部13所構成之開口部^。開口部 之形成位置或個數並無特殊之限制,然而,宜於長研磨領 域之寬度方向中央形成-個且於長度方向連續地形成。 開口部14之形成方法可列舉如:u藉由湯姆森刀等將 預定位置之聚胺基曱酸醋發泡體穿通而形成貫通孔12,並 2〇使用切削刀等切削該貫通孔12之兩侧而形成架部13之方 法,2)以開口部14之寬度將預定位置之聚胺基甲酸醋發泡 體切削至架部13之深度而形成溝,然後以貫通孔12之寬度 穿通溝内部之聚胺基甲酸賴發泡體而形成貫通孔12及架部 13之方法;3)使用具有開口部14之形狀的長模之方法等。 26 200831236 另,使用溝加工機來形成開口部14時,亦可採用將長研磨 領域9盤繞錢子上且-面送出-面崎穿I心削,然後 再將業經加工之長研磨領域9捲繞至輥子上之方法。 貫通孔12之寬度並無特殊之限制,然而通常為5〜 5 15職,又,架部13之寬度及高度亦無特殊之限制,然而, 通常寬度為2〜5mm,且高度為0.3〜〇 5mm。 另一方面,於第1 — B本發明之製造方法中,然後,自 長研磨領域之單侧且朝長度方向連續地形成架部,並製作 二個具有架部之長研磨領域,又,舉例言之,其製作方法 1〇可列舉如])以架部13之深度且以架部13之2倍寬^切削預 定位置之聚胺基甲酸酯發泡體而朝長度方向形成連續之 溝’並沿著該溝之中央部分將聚胺基甲酸酯發泡體切=為 二個之方法;2)朝長度方向連續地切削二個所個別製作之 聚胺基甲酸酯發泡體之單側而分別形成架部13之方法;3) 15朝長度方向將一個聚胺基甲酸酯發泡體裁切為二個,且朝 長度方向連續地切削各聚胺基甲酸酯發泡體之單側而分別 形成架部13之方法等。 於第1 一B本發明之製造方法中,各長研磨領域9之寬度 並無特殊之限制,然而通常為30〜125cm,又,架部13之寬 20 度及高度係與前述相同。 長透光領域10之形成材料並無特殊之限制,然而,宜 使用於進行研磨之狀態下可進行高精度之光學終點债測且 於波長300〜800nm之全範圍中透光率為4〇%以上之材料, 更為理想的是透光率為50%以上之材料,舉例言之,此種 27 200831236 材料可列舉如:聚胺基甲酸s旨樹脂、聚醋樹脂、苯酴樹脂、 脲树知、二聚氰胺樹脂、環氧樹脂及丙烯酸樹脂等熱硬化 1±树知,聚胺基甲酸酯樹脂、聚酯樹脂、聚醯胺樹脂、纖 維素系樹脂、丙烯酸樹脂、聚碳酸酯樹脂、鹵素系樹脂(聚 5氯乙烯、聚四氟乙烯、聚偏氟乙烯等)、聚苯乙烯及烯烴系 树月曰(來乙烯、聚丙烯等)等熱可塑性樹脂;藉由紫外線或電 子射線等光線進行硬化之光硬化性樹脂;及感光性樹脂 等,又,該等樹脂可單獨使用,亦可併用2種以上。另,熱 硬化性樹脂宜為利用較低溫來進行硬化者,又,使用光硬 10化丨生树脂時,宜併用光聚合引發劑。於該等樹脂中,宜使 用熱硬化性樹脂,特別是宜使用熱硬化性聚胺基甲酸酯樹 脂° 舉例言之,凸狀長透光領域10可藉由押出成形法或澆 鑄成形法來製作,又,如第3圖所示,以預定間隔於樹脂片 5 15上化行多數溝加工,然後朝長度方向切斷溝16之中央 部’藉此,可有效地製作凸狀長透光領域1〇。第4圖係以寬 度方向切斷樹脂片15之截面圖,長透光領域1〇之肩部17之 見度及高度宜對應於長研磨領域之架部13之寬度及深度, 又’頭部18之寬度亦宜對應於長研磨領域9之貫通孔12之寬 20度’又,長透光領域1〇最厚之部分的厚度(h)至少必須比長 研磨領域9之厚度薄,且宜為長研磨領域之厚度的50〜 90% ’更為理想的是60〜85%。 於第1本發明中所使用之透明支持膜並無特殊之限 制’然而·,宜為透明性高且具有耐熱性同時具有可撓性之 28 200831236 樹脂膜,舉例言之,兮糾炉腊* ^ r.4祕之材料可贿如:聚酯;聚 一丙細;聚笨乙稀;聚酿亞胺;聚乙烯醇;聚氣乙 :;聚=含氣樹脂;尼龍;纖維素;_等通 工程:r” ♦嶋亞胺、㈣_及㈣颯 塑膠等。 狂 透明支持膜之厚度並無特殊之限制,然而,若由強度 或捲繞等觀點來看,則宜職〜扇师,又,透明支持膜The number average molecular weight of the molecular weight polyol is not particularly limited, and τη' is preferably 500 to 2,000 from the viewpoint of the elastic properties of the obtained polyurethane resin. If the number average molecular weight is less than 5 Å, the polyurethane resin using the polyol does not have sufficient elastic properties and 15 becomes a weak polymer, and therefore, it is produced by the polyurethane resin. The field of grinding will become too hard, and brigade will be the cause of scratches on the surface of the wafer, and it will not be ideal from the viewpoint of the service life of the polishing pad because it is easily worn. On the other hand, if the number average molecular weight is more than 2,000, the polyurethane resin using the polyol may become too soft, and therefore, the grinding field produced by the polyurethane resin may There is a tendency to have poor flattening characteristics. In addition to the aforementioned high molecular weight multi-fermented yeast, the polyol component is preferably used in combination with a low molecular weight polyol such as ethylene glycol, 1,2-propylene glycol, 1,3 to propylene glycol, 1,4-butanediol, 1,6. —Hexyl alcohol, neopentyl glycol, 1,4—cyclohexene 20 200831236 alkane dimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, 1 , 4 bis (2-hydroxyethoxy) benzene and the like. Further, a low molecular weight polyamine such as ethylenediamine, indolediamine, dimethanediamine or diamethylenetriamine may also be used. The ratio of the high molecular weight polyol to the low molecular weight polyol in the polyol component can be determined depending on the characteristics required in the field of polishing made of the polyol. When the polyurethane foam is produced by the prepolymer method, the prepolymerization is cured by using a chain extender, and the chain extender is an organic compound having at least two active 10-hydrogen groups, and is active. Examples of the hydrogen group include a hydroxyl group, a primary or secondary amine group, a thiol group (SH), and the like. Specifically, for example, 4,4'-methylenebis(indole-chloroaniline) (MOCA), 2,6-dichloro-p-phenylenediamine, 4,4'-methylene double (2) , 3-dichloroaniline), 3,5-bis(methylthio)- 2,4-toluenediamine, 3,5-bis(methylthio)- 2,6-toluenediamine, 3,5- Diethylsulfonyl-15 2,4-diamine, 3,5-diethyltoluene-2,6-diamine, propylene glycol-1-2 ρ-amino benzoate, 1,2-bis (2 -Aminophenylthio)ethane, 4,4'-diamine®-based 3,3'-diethyl-5,5'-dimethyldiphenylmethane, N,N'-1-2 sec-butyl Base 4,4'-diaminodiphenyl decane, 3,3'-diethyl- 4,4'-diaminodiphenylmethane, m-xylylenediamine, N,N'-1-2 sec —butyl ρ — 20 phenylenediamine, m-phenylenediamine, and p-xylylenediamine, etc., as an example of a polyamine; or the aforementioned low molecular weight polyol or low molecular weight polyamine, etc., and the chain extenders One type may be used, or two or more types may be mixed. The ratio of the isocyanate component, the polyol component, and the chain extender can be variously changed depending on the molecular weight of each molecule or the desired physical properties in the polishing field. 21 201131236 The field of grinding having the desired polishing characteristics is obtained. The number of isocyanate groups of the isocyanate component is preferably 0.80 to 1.2 Å with respect to the total active hydrogen group (base group + amine group) of the polyol component and the chain extender. Ideally it is 〇99~1 · 15. When the number of foreign gas feel S曰 is outside the range, hardening failure occurs, 5 the required specific gravity and hardness are not obtained, and the polishing property is lowered. 0 Polyurethane foam can be produced. Any of a prepolymer method and a primary formation method, however, a prepolymer method in which an isocyanate terminal prepolymer is synthesized from an isocyanate component and a polyol component in advance and a chain extender is reacted therewith, and the obtained polyamino group is obtained. The phthalic acid ester is excellent in physical properties and is suitable. The method for producing the polyurethane foam may, for example, be a method of adding hollow beads, a mechanical foaming method (including a mechanical foam method), a chemical foaming method, or the like. In particular, it is preferred to use a mechanical foaming method which is a copolymer of a polyorgano oxime and a polyether and which does not contain a reactive nitrogen group. Examples of the above-mentioned Shiyue surfactant include suitable compounds such as sh-192 and L-5340 (manufactured by TORAYDOW CORMNG Co., Ltd.). Hereinafter, an example of a method for producing a long-grinding field composed of a foam of a polyamino phthalic acid 6 will be described. The method for producing the long-grinding field includes the following procedure. 1) The foaming procedure for making the bubble residue of the isocyanide terminal compound is added to the isocyanate end prepolymer (the first component), and the agent is added in the presence of a non-anti-ship. The lining is carried out, and the non-reactive gas is dispersed in the fine bubbles to form a bubble dispersion. The foregoing prepolymerization 22 200831236 When the material is a solid at normal temperature, it can be preheated to a suitable temperature and used after melting. 2) Mixing agent of a curing agent (chain extender) A chain extender (second component) is added to the above-mentioned bubble dispersion, and the mixture is stirred and stirred to prepare a foaming reaction liquid. 5 3) Scaling procedure The aforementioned foaming reaction solution is allowed to flow into the long mold. 4) Hardening procedure The foaming reaction liquid which has flowed into the long mold is heated and the reaction is hardened. The non-reactive gas for forming the fine bubbles is preferably non-flammable, and specific examples thereof include a rare gas such as nitrogen, oxygen, carbon dioxide, nitrogen or nitrogen, or a mixed gas of the gases, and the cost is It is most desirable to use air that removes moisture after drying. The mixing device in which the non-reactive gas is formed into a fine bubble and dispersed in the first component containing the quinone 15-based surfactant is not particularly limited, and a known stirring device can be used. Specifically, for example, High-speed agitator, dissolver, twin-shaft planetary mixer (turnover mixer), etc. There is no particular limitation on the shape of the agitating wing of the agitating device. However, it is preferable to obtain fine bubbles when the wing is given by the beater type. 2 〇 Another mixing and mixing procedure for forming a bubble dispersion in a foaming process. It is also an ideal embodiment to use a mixing device in which a chain extender is added and mixed. In particular, the agitation in the mixing process may not be the agitation of the formation of the bubble, and it is preferable to use a stirring device which does not entrap large bubbles, and such a stirring device is preferably a planetary mixer. Searching for foaming and mixing procedures 23 200831236 The same mixing device is not a problem for the throwing device, and it is also suitable for adjusting the mixing conditions such as the rotation speed of the sandalwood wing as needed. (1) In the method for producing a polyaminomethyl-foam, the foam is heated in a foaming reaction in a human mold, and the foam is heated until it flows. The effect of the feature is extremely suitable. Further, it is also possible to form a condition in which the foaming reaction liquid is poured into a long mold and directly placed in a heating oven to perform post-cure. Since heat is not immediately transferred to the reaction component under such conditions, the bubble diameter is not When the hardening reaction is carried out at a normal pressure of 10, it is preferable because the shape of the bubble is stable. Further, the foaming reaction liquid can be prepared by a mechanical foaming method, and the surface material can be sent out, and the foaming reaction liquid can be continuously discharged onto the surface material, and the thickness can be uniformly adjusted, and the foaming reaction liquid can be continuously cured. A long-grinding field composed of a polyurethane foam is produced. When the poly 15 urethane foam is produced by the mechanical foaming method, the viscosity of the foaming reaction liquid at the time of discharge is preferably 5 to 0 l 〇 Pa · s °, and the polyurethane foam is The average bubble diameter is preferably from 3 Å to 80 μm, and more preferably from 3 Å to 60 μm. If it is out of this range, there is a tendency that the polishing rate is lowered or the flatness of the material to be polished (wafer) is lowered. The specific gravity of the polyurethane foam is preferably -3. If the specific gravity is less than 0.5, the surface strength of the polishing field is lowered, and the flatness of the material to be polished tends to be lowered. If it is more than 1 > 3, the number of bubbles on the surface of the polishing field is reduced, and although The flatness is good, but there is a tendency for the grinding 24 200831236 to decrease in speed. The hardness of the polyamine bismuth citrate pericardium is preferably 45 to 7 G degrees by & Asker D hardness meter. If the hardness of the sub-scott d is small _ degrees, the flatness of the material to be polished will be lowered, and if it is greater than 7 degrees, the flatness of the material 5 is good, but the consistency of the material to be polished (uniformity) Reduce the tendency. 'Wei Chunyu and the ground surface that is in contact with the research should have the structure to protect # and update the concave and convex structure of the liquid. Although the polishing field composed of the foam has a plurality of openings on the polishing surface and has the ability to hold and renew the liquid to be used 10, however, since the polishing surface forms the uneven structure, the slurry can be further effectively maintained and renewed. Moreover, the destruction of the material to be polished due to the adsorption between the material to be polished can be prevented. The concave-convex structure is not particularly limited as long as it can maintain and update the shape of the slurry. For example, X-channel, XY lattice groove, concentric circle (four), through-hole, non-through hole, and more than 15 angles are mentioned. , cylindrical, spiral groove, eccentric circular groove, radial groove and combination. Further, the uneven structure is generally regular. However, in order to constitute an ideal slurry retainability and renewability, the groove pitch, the groove width, and the groove depth may be changed every certain range. There is no particular limitation on the thickness of the π long abrasive field, but it is usually 0.8 to 1 and preferably 1 2.5 mm. The method of producing the above-mentioned polishing field of thickness can be exemplified by a method of using the ore-type or planer to make the above-mentioned foam block to have a predetermined thickness; the tree weaver has a long hole of a predetermined thickness of the die hole and It is made of hard branches; and (4) fabric tilting or sheet forming technology 25 200831236 Moreover, the thickness error of the long grinding field should be below ΙΟΟμιη, and the thickness error is greater than 100_, which will constitute a large fluctuation in the long grinding field, and will produce The part in which the contact state of the material to be polished differs, and causes a bad squeak to the grinding characteristics. Moreover, in order to eliminate the thickness error in the field of long grinding, generally, the trimming device which has been electrodeposited and fused with diamond abrasive is used to trim the grinding surface at the initial stage of grinding. However, if it is larger than the above range, the dressing time will increase and decrease. Productivity. A method of suppressing the thickness error in the field of long grinding can be exemplified by a method of polishing the surface by a light eliminator. Further, it is preferable to carry out the polishing stepwise by using a polishing material having a different particle size or the like. The length or width of a long abrasive field can be suitably adjusted depending on the grinding device used, however, the length is usually 5 to 15 m and the width is usually 6 to 250 cm. In the manufacturing method of the first aspect of the invention, an opening portion formed by the through hole 12 and the frame portion 13 is formed in the long polishing field 9 . The position or the number of the openings to be formed is not particularly limited. However, it is preferable to form one in the center in the width direction of the long polishing field and to form continuously in the longitudinal direction. In the method of forming the opening portion 14, a through-hole 12 is formed by punching a polyamine-based tantalum vinegar foam at a predetermined position by a Thomson knife or the like, and the through-hole 12 is cut by a cutter or the like. a method of forming the frame portion 13 on both sides, 2) cutting the polyurethane foam of a predetermined position to the depth of the frame portion 13 by the width of the opening portion 14 to form a groove, and then penetrating the groove with the width of the through hole 12 A method of forming the through hole 12 and the frame portion 13 by using the inside of the polycarbamic acid lysate foam; 3) a method of using a long mold having the shape of the opening portion 14 or the like. 26 200831236 In addition, when using the groove processing machine to form the opening portion 14, it is also possible to use the long-grinding field 9 to be wound around the money and the - surface to be sent out - the surface is I-cut, and then the processed long-grinding field is 9 rolls. The method of winding onto the roller. The width of the through hole 12 is not particularly limited, but is usually 5 to 5 15 positions. Further, the width and height of the frame portion 13 are not particularly limited. However, the width is usually 2 to 5 mm and the height is 0.3 to 〇. 5mm. On the other hand, in the manufacturing method of the first to the fourth aspect of the invention, the frame portion is continuously formed from one side of the long grinding field and continuously in the longitudinal direction, and two long grinding fields having the frame portion are produced, and, for example, In other words, the manufacturing method 1 〇 如 ) ) ) ) ) ) ) ) ) ) ) 连续 连续 连续 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚'And cut the polyurethane foam along the central portion of the groove to two; 2) continuously cut two individually fabricated polyurethane foams in the longitudinal direction a method of forming the frame portion 13 on one side; 3) 15 cutting a polyurethane foam into two in the longitudinal direction, and continuously cutting each polyurethane foam in the longitudinal direction The method of forming the frame portion 13 on one side and the like. In the manufacturing method of the first aspect of the invention, the width of each of the long polishing fields 9 is not particularly limited, but is usually 30 to 125 cm, and the width of the frame portion 13 is 20 degrees and the height is the same as described above. The material for forming the long light-transmitting field 10 is not particularly limited. However, it is preferably used for performing high-precision optical end point measurement in the state of being polished, and the light transmittance is 4% in the entire range of wavelengths of 300 to 800 nm. For the above materials, a material having a light transmittance of 50% or more is more preferable. For example, such a material of 2008, 2008, 236, for example, a polyamino carboxylic acid resin, a polyester resin, a benzoquinone resin, a urea tree. Known, melamine resin, epoxy resin, acrylic resin and other thermosetting 1± tree, polyurethane resin, polyester resin, polyamide resin, cellulose resin, acrylic resin, polycarbonate Thermoplastic resin such as resin, halogen resin (poly 5 vinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, and olefinic resin (such as ethylene, polypropylene, etc.); by ultraviolet light or electron A photocurable resin which is cured by light such as rays, a photosensitive resin, or the like, and these resins may be used singly or in combination of two or more kinds. Further, it is preferable that the thermosetting resin is cured by using a relatively low temperature, and when a photohardening resin is used, it is preferred to use a photopolymerization initiator in combination. Among these resins, a thermosetting resin is preferably used, and in particular, a thermosetting polyurethane resin is preferably used. For example, the convex long light transmitting field 10 can be formed by extrusion molding or casting molding. Further, as shown in Fig. 3, most of the groove processing is performed on the resin sheet 5 15 at predetermined intervals, and then the central portion of the groove 16 is cut in the longitudinal direction, whereby the convex long light can be efficiently produced. Field 1〇. Fig. 4 is a cross-sectional view of the resin sheet 15 cut in the width direction, and the visibility and height of the shoulder portion 17 of the long light-transmitting field should correspond to the width and depth of the frame portion 13 of the long-polishing field, and The width of 18 should also correspond to the width of the through hole 12 of the long grinding field 9 by 20 degrees'. The thickness (h) of the thickest part of the long light transmission area must be at least thinner than the thickness of the long grinding field 9, and preferably For the length of the long grinding field of 50 to 90% 'more ideally 60 to 85%. The transparent support film used in the first invention is not particularly limited. However, it is preferably a resin film having high transparency, heat resistance and flexibility. 200831236 resin film, for example, 兮 炉 furnace wax* ^ r.4 Secret material can be bribed as: polyester; poly-propene; polystyrene; poly-imine; polyvinyl alcohol; polyethylene B;; poly = gas-containing resin; nylon; cellulose; Waiting for the project: r" ♦ 嶋 imine, (four) _ and (four) 飒 plastic, etc. The thickness of the mad transparent support film is not particularly limited, however, if it is from the point of view of strength or winding, it is suitable for the fan , again, transparent support film
之寬度亦無特殊之限制,然而,若考慮所要求之研磨層之 大小,則宜為60〜25()em,又,透明支持膜之長度可配合所 要求之研磨層錢適當較^ H由於導料分(前後 各2m)疋必要的’因此通常為9〜,且較為理想的是1〇 〜15m 〇 第1—A本發明之長研磨墊之製造方法包含有:將前述 長透光領域10設置於前述長研磨領域9之開口部14内之程 序,及將透明支持膜11黏合於前述長研磨領域9之研磨裡面 鲁 側之程序。另,别述各程序中何者先進行皆可,且亦可同 時地進行。 - 第1 — B本發明之長研磨墊之製造方法包含有··程序 A ’係平行地配置二個前述長研磨領域9,使架部與架部相 ° 對’並形成開口部14以插入前述長透光領域1〇者;程序B, 係將前述長透光領域10設置於前述開口部14内者;及程序 C ’係將透明支持膜11黏合於前述長研磨領域9之研磨裡面 侧者。另,可於進行過程序A及程序B後再進行程序C,亦 可於進行過程序A及程序C後再進行程序B。 29 200831236 於前述程序A中,二個長研磨領域9之間隔宜對應於長 透光領域10之頭部18之寬度。 將長透光領域10设置於開口部14内時,宜透過接著層 20接著架部13與肩部17,藉此,可完全地防止漿液之滲入。 為接著層20之原料的接著劑並無特殊之限制,可使用公知 接著劑,然而,若由作業程序之自動化、高速化及省力化 之觀點來看,則宜使用熱熔接著劑,特別是宜使用接著性 優異且軟化點低之EVA系或合成橡膠系熱熔接著劑。 接著方法並無特殊之限制,舉例言之,可藉由下述方 10 15 20 法來進行,即:使長研磨領域9於輸㈣上㈣,並於架部 13上塗布齡接著劑,χ,在將長透光領域職置於開口 内後’制具有加熱11之軋㈣長透光領域進行加熱 ρ ’、、、瓶度可考慮熱熔接著劑之軟化點而適當地調 整熱熔接著趣可塗布於長透光領域之肩部上。 彳σ之將透明支持膜11黏合於前述長研磨領 域9之研磨裡面側之方法 Μ 卢音敁盥、悉歹〗牛如·精由雙面膠帶將長研磨 項域/、透明支持膜夾住並 磨裡面側塗布接㈣^ 法;於長研磨領域之研 於透明^ 透明场膜之方法等,不過, ; 膜上對應於貫通孔12之部八必項夫π晉右雔& 膠帶或接著劑。 刀必/頁未6又置有又面 另方面,於第2本發明中之研磨芦之研磨1域#ibJL 有微細氣泡之聚胺基 =:研磨_:具 酸醋之原料係與前述相同。體所構H聚胺基甲 别返聚胺基甲酸酿發泡體係藉由使氣泡分散胺基甲酸 30 200831236 酉曰、、且成物硬化而製造,且前述 旅、日人目士人田斤 义虱/包刀散胺基甲酸酯組成物 係此β具有^異氰酸s|基化合物之 氮基化合物之第2成分所得到者1 s:末端預聚合物係構成含異氰酸輪心鏈延伸= 5 =!氫Γ合物,—次形成法中,異_分 係構成含異氰酸酯基化合物, 成含活性氫基化合物。 伸劑及多元醇成分則構 (勺人機^ /散絲甲K组成物係藉由機械發泡法 (=機械錄法)來婦,㈣是以使㈣粒基魏燒盘 =共聚物且未含有活性氫基的㈣界面活性劑之機械 叙泡法為佳。前述石夕系界面活性劑可列舉如SH-192、i_ 5340(東麗道康寧衫司製造)等適當之化合物,又,於聚胺 基泡體中,㈣界面活性劑之添加量宜為〇〇5〜5 重量#界面活性劑量小於㈣5重量%時,會有無法得 Μ到微細氣泡發泡體之傾向,另一方面,若大於5重量%,則 由於矽系界面活性劑之可塑效果,會有不易得到高硬度之 聚胺基甲酸酯發泡體之傾向。 另,亦可依需要添加抗氧化劑等安定劑、潤滑劑、顏 料、填充劑、去靜電劑、其他添加劑。 20 以下說明調製氣泡分散胺基甲酸酯組成物之方法例, 刚述氣泡分散胺基甲酸酯組成物之調製方法包含有後述程 序。 ^製作異氰酸醋末端預聚合物之氣泡分散液之發泡程序 於異氰酸醋末端預聚合物(第1成分)中添加矽系界面活 31 200831236 性劑,並於非反應性氣體之存在下進行攪拌,同時使非反 應性氣體以微細氣泡分散而作成氣泡分散液。前述預聚合 物於常溫下為固體時,可預熱至適當溫度並熔融後使用。 2)硬化劑(鏈延伸劑)混合程序 5 於前述氣泡分散液中添加鏈延伸劑(第2成分),並混 合、攪拌而調製氣泡分散胺基甲酸酯組成物。 用以形成前述微細氣泡之非反應性氣體及攪拌裝置係 與前述相同。 於氣泡分散胺基甲酸酯組成物中亦可添加三級胺系等 10公知可促進聚胺基甲酸酯反應之觸媒,觸媒之種類、添加 量可考慮混合程序後流入預定形狀之模中的流動時間而加 以選擇。 於第2本發明中所使用之透明支持膜並無特殊之限 制’可列舉如與前述相同者。There is no particular limitation on the width. However, if the size of the required polishing layer is considered, it is preferably 60 to 25 () em, and the length of the transparent support film can be matched with the required polishing layer. The guide material (2m before and after) 疋 necessary 'thus usually 9~, and preferably 1〇~15m 〇 1st - A manufacturing method of the long polishing pad of the present invention includes: the aforementioned long light transmission field 10 is a program provided in the opening portion 14 of the long polishing field 9 and a procedure for bonding the transparent support film 11 to the polishing side of the long polishing field 9. In addition, it is not necessary to describe which of the procedures can be performed first, and can also be performed simultaneously. - 1st - B The method for manufacturing a long polishing pad according to the present invention includes the program A' in which two long polishing fields 9 are arranged in parallel, and the frame portion and the frame portion are opposed to each other, and the opening portion 14 is formed to be inserted. In the long light transmission field, the program B is configured such that the long light transmission region 10 is disposed in the opening portion 14; and the program C' is to adhere the transparent support film 11 to the polishing inner side of the long polishing field 9 By. Alternatively, the program C may be executed after the program A and the program B have been performed, or the program B may be performed after the program A and the program C have been performed. 29 200831236 In the aforementioned procedure A, the spacing of the two long abrasive fields 9 corresponds to the width of the head 18 of the long light transmitting field 10. When the long light-transmitting region 10 is placed in the opening portion 14, it is preferable to pass the adhesive layer 20 to the frame portion 13 and the shoulder portion 17, whereby the penetration of the slurry can be completely prevented. The adhesive for the raw material of the adhesive layer 20 is not particularly limited, and a known adhesive can be used. However, from the viewpoint of automation, high speed, and labor saving of the working procedure, it is preferable to use a hot melt adhesive, in particular, It is preferable to use an EVA-based or synthetic rubber-based hot-melt adhesive which is excellent in adhesion and has a low softening point. The method is not particularly limited. For example, it can be carried out by the following method: 10 15 20, that is, the long grinding field 9 is applied to the fourth (four), and the age of the adhesive is applied to the frame portion 13, After the long light transmission field is placed in the opening, the heating is performed in the field of heating (11) long light transmission, and the bottle degree can be appropriately adjusted according to the softening point of the hot melt adhesive. Interest can be applied to the shoulders of the long light field.彳σ The method of bonding the transparent support film 11 to the inner side of the long-grinding field 9 is Μ Lu Yin敁盥, 歹 歹 牛 如 · 精 精 由 由 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精 精And grinding the inner side of the coating (four) ^ method; in the field of long grinding in the transparent ^ transparent field film method, etc., however, the film corresponds to the through hole 12 of the eight VIII 夫 晋 晋 晋 雔 amp amp amp 胶带Agent. The knife must be/the page is not provided with another aspect. In the second invention, the grinding of the reed 1 field #ibJL has a fine bubble polyamine group =: grinding_: the raw material with the acid vinegar is the same as the above . The H-polyaminomethyl-poly-glycolic acid brewing foaming system of the body is produced by dispersing the bubble-dispersed carbamic acid 30 200831236 and hardening the object, and the aforementioned traveler and Japanese person, Tian Jinyi, The tartaric acid ester composition is obtained by the second component of the nitrogen-based compound of the β-isocyanate s|based compound. The s: terminal prepolymer system constitutes an isocyanate-containing chain extension. = 5 =! Hydrogen condensate, in the secondary formation method, the hetero- ary system constitutes an isocyanate-containing compound to form an active hydrogen-containing compound. Stretching agent and polyol component structure (spooning machine ^ / loose wire K composition by mechanical foaming method (= mechanical recording method) to women, (four) is to make (four) grain based Wei burning plate = copolymer and A mechanical foaming method of the (IV) surfactant which does not contain an active hydrogen group is preferred. The above-mentioned Shishi surfactant may, for example, be an appropriate compound such as SH-192, i_ 5340 (manufactured by Toray Dow Corning), and In the polyamine-based foam, (4) the surfactant is preferably added in an amount of 〇〇5 to 5 by weight. When the surfactant is less than (4) 5% by weight, there is a tendency that the fine bubble foam cannot be obtained. On the other hand, When it is more than 5% by weight, there is a tendency that it is difficult to obtain a high-hardness polyurethane foam due to the plasticizing effect of the lanthanoid surfactant. Further, a stabilizer such as an antioxidant or a lubricant may be added as needed. Agent, pigment, filler, destaticizing agent, and other additives. 20 Hereinafter, a method of preparing a bubble-dispersed urethane composition will be described. The preparation method of the bubble-dispersed urethane composition is described below. ^Making isocyanate end prepolymer gas The foaming procedure of the dispersion is carried out by adding a lanthanide interface activity 31 200831236 agent to the isocyanate end prepolymer (the first component), and stirring in the presence of a non-reactive gas, while making the non-reactive gas The fine bubbles are dispersed to form a bubble dispersion. When the prepolymer is solid at normal temperature, it can be preheated to an appropriate temperature and melted, and then used. 2) A curing agent (chain extender) mixing procedure 5 is added to the bubble dispersion described above. The chain extender (second component) was mixed and stirred to prepare a bubble-dispersed urethane composition. The non-reactive gas and the stirring device for forming the above-mentioned fine bubbles are the same as described above. In the bubble-dispersed urethane composition, a tertiary amine-based catalyst or the like may be added, and a catalyst which promotes the reaction of the polyurethane may be added. The type and amount of the catalyst may be considered to flow into a predetermined shape after the mixing procedure. The flow time in the mold is chosen. The transparent support film used in the second invention is not particularly limited, and the same as the above may be mentioned.
20 於第2本發明中所使用之透光領域形成材料並無特殊 之限制,可列舉如與前述相同者。 以下說明製造第2本發明之長研磨墊之方法,第5圖係 第2本發明之長研磨塾之載面圖,第6圖係顯示第2本發明^ 長研磨墊之製造程序例之示意圖。 後2m比長模框大一點,又 長杈24係由底盤及長模框所構成。首先,於底盤上配 置前述透明支制η,並於該透明切助上配 樞’又’進行絲與長難之合模,錢鑄之材料不= 透明支持膜與長模框之間隙漏出。透明支持臈宜設置^吁 ·— ’長模框之長度可考慮所要求: 32 200831236 研磨躲度而適當地設定,然而通常為5〜15m,且較為理 想的疋7〜l〇m,長模框之寬度亦無特殊之限制,然而,若 考慮所要求之研磨層大小,則宜為〜25Gem,又,長模框 之间度亦無特殊之限制,然而,若由所要求之研磨領域之 5厚度及洗鱗時防止溢流之觀點來看,則宜為H)〜60麵。 然後,如第6圖所揭示,於透明支持膜11上之預定位置 配置透光領域形成用模框25。 第7 (a)圖係顯示透光領域形成用模框於又方向之截 面結構之示意圖,第7 —(b)圖係顯示透光領域形成用模框之 上面結構之示意圖’第7 —⑷圖係顯示透光領域形成用模框 之下面結構之示意圖。 舉例言之,透光領域形成用模框25可將金屬或塑膠等 作為原料而藉由洗鑄成形法來製作,如第6圖所揭示,若透 光領域形成用模框之長度為可設置於長模上之長度則無特 15殊之限制。透光領域形成用模框具有注入孔26及注入壁 27 ’注入孔係用以注入透光領域形成材料以而形成透光領 域10之孔,注入壁則用以使透光領域形成材料28與氣泡胺 基甲酸醋組成物23不會混雜之壁,且為用以於透光領域川 與研磨領域9間形成一定間隙之壁。 20 注入孔26之長度可配合長模之内壁長度適當地調整, 又,注入孔26之寬度可配合所要求之透光領域之寬度適當 地设疋,然而宜為0·5〜2cm,又,注入孔%可如第7 —(b) 圖般連續地設置一個,亦可以預定間隔間歇地設置複數個。 若由所要求之研磨領域之厚度及洗鑄時防止溢流之觀 33 200831236 點來看,則注入壁27之高度通常為1〇〜6〇mm,且較為理想 的疋20〜50mm,又,注入壁27之厚度可考慮透光領域與研 磨領域間之空間寬度而適當地設定,然而宜為lmm以下, 且更為理想的是0.9mm以下。另,注入壁27之表面宜施行 5 脫模處理。 然後,於前述注入孔26内吐出透光領域形成材料28, 並使該透光領域形成材料28硬化而形成透光領域1〇。又, 於月il述注入孔26外之前述透明支持膜n上吐出前述氣泡分 散胺基甲酸醋組成物23,並使該氣泡分散胺基甲酸醋組成 10物23硬化而形成研磨領域9。前述二個程序中何者先進行皆 可,或者亦可同時地進行,若考慮作業效率,則前述二個 程序宜同時地進行。透光領域形成材料28及氣泡分散胺基 甲酸I组成物23之吐出量可考慮透光領域之厚度及面積、 研磨領域之厚度及面積而適當地調整。 15 舉例言之,透光領域形成材料28及氣泡分散胺基甲酸 醋組成物23之硬化係於均勻地調整厚度後藉由使其通過設 置於輸送機上之加熱烘箱内來進行,加熱溫度係4〇〜1〇〇 C,加熱時間則為5〜10分鐘。將反應至不會流動為止之氣 泡分散胺基曱酸酯組成物進行加熱、後固化係具有提升聚 20胺基曱酸醋發泡體之物理特性之效果。另,透光領域形成 材料為熱可塑性樹脂時,可使氣泡分散胺基甲酸i旨組成物 熱硬化後藉由將透光領域形成材料冷卻而使其硬化,又, 透光領域形成材料為光硬化性樹脂時,則可照射紫外線或 電子射線等光線而使其硬化。若由提高透光率之觀點來 34 200831236 看’則w述透光領域宜盡可能地未含有氣泡。 然後’將透光領域形成用模框及長模脫模而製作於透 光領域與研磨領域間具有間隙之長研磨層。所得到之長研 磨層可進行後固化或依照所使用之研磨裝置適當地調整長 5度,,再者,長研磨層係經過於研磨表面形成凹凸結構之程 序專而構成長研磨墊。The material for forming a light-transmitting region used in the second invention is not particularly limited, and the same as the above may be mentioned. Hereinafter, a method of manufacturing the long polishing pad of the second aspect of the present invention will be described. Fig. 5 is a plan view showing the long grinding boring of the second invention, and Fig. 6 is a view showing a manufacturing procedure of the second long polishing pad of the second invention. . The rear 2m is larger than the long mold frame, and the long 杈24 series is composed of the chassis and the long mold frame. First, the transparent support η is disposed on the chassis, and the transparent cleavage is performed on the transparent shackle to perform the mold clamping of the wire and the long difficulty. The material of the money casting does not leak out of the gap between the transparent support film and the long mold frame. Transparent support 臈 设置 ^ 吁 — — ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 The width of the frame is also not particularly limited. However, if the required size of the polishing layer is considered, it is preferably ~25 Gem, and there is no particular limitation on the degree of the long mold frame. However, if it is required by the grinding field, 5 Thickness and the prevention of overflow when washing scales, it should be H) ~ 60 faces. Then, as disclosed in Fig. 6, a transparent field forming mold frame 25 is disposed at a predetermined position on the transparent supporting film 11. Fig. 7(a) is a schematic view showing a cross-sectional structure of a frame for forming a light-transmitting region in a direction, and Fig. 7-(b) is a schematic view showing a structure of a frame for forming a light-transmitting region. [7-(4) The figure shows a schematic view of the underlying structure of the mold frame for forming a light-transmitting field. For example, the transparent frame forming frame 25 can be made by using a metal or plastic material as a raw material by a die-casting method. As disclosed in FIG. 6, if the length of the transparent frame is set, the length can be set. There is no special limit on the length of the long model. The transparent frame forming frame has an injection hole 26 and an injection wall 27. The injection hole is used to inject a light-transmitting field forming material to form a hole of the light-transmitting field 10, and the injection wall is used to form the light-transmitting field forming material 28 and The bubble urethane hydrate composition 23 does not mix the wall, and is a wall for forming a certain gap between the transparent field and the polishing field 9 . 20 The length of the injection hole 26 can be appropriately adjusted according to the length of the inner wall of the long mold, and the width of the injection hole 26 can be appropriately set to match the width of the required light-transmitting field, but it is preferably 0·5~2 cm, and The injection hole % may be continuously provided as in the case of Fig. 7 - (b), or a plurality of intervals may be intermittently set at predetermined intervals. The height of the injection wall 27 is usually 1〇~6〇mm, and the ideal height is 20~50mm, depending on the thickness of the required grinding field and the view of preventing the overflow during the washing. The thickness of the injection wall 27 can be appropriately set in consideration of the space width between the light-transmitting field and the polishing field, but is preferably 1 mm or less, and more preferably 0.9 mm or less. Alternatively, the surface of the injection wall 27 should be subjected to a 5 release treatment. Then, the light-transmitting-domain forming material 28 is ejected into the injection hole 26, and the light-transmitting-domain forming material 28 is hardened to form a light-transmitting region. Further, the bubble-dispersed urethane composition 23 is discharged onto the transparent support film n outside the injection hole 26, and the bubble-distributed urethane composition 10 is cured to form a polishing field 9. Which of the above two procedures can be performed first or simultaneously, and if the work efficiency is considered, the above two procedures should be performed simultaneously. The amount of discharge of the light-transmitting region forming material 28 and the bubble-dispersed amine-based formic acid I composition 23 can be appropriately adjusted in consideration of the thickness and area of the light-transmitting field and the thickness and area of the polishing field. For example, the curing of the light-transmitting region forming material 28 and the bubble-dispersing urethane composition 23 is performed by uniformly adjusting the thickness by passing it through a heating oven provided on the conveyor, and heating the temperature system. 4〇~1〇〇C, heating time is 5~10 minutes. The reaction of the bubble-dispersed amino phthalate composition which does not flow until it is heated is carried out, and the post-curing has an effect of improving the physical properties of the poly 20-amino phthalic acid vinegar foam. In addition, when the light-transmitting field forming material is a thermoplastic resin, the bubble-dispersed amine-formic acid composition may be thermally cured, and then cured by cooling the light-transmitting region forming material, and the light-transmitting region forming material is light. In the case of a curable resin, it can be cured by irradiation with light such as ultraviolet rays or electron beams. If it is seen from the viewpoint of increasing the light transmittance, it is preferable to say that the light-transmitting field does not contain bubbles as much as possible. Then, the light-transmissive field was formed by demolding the mold frame and the long mold to form a long polishing layer having a gap between the light-transmitting field and the polishing field. The obtained long-grinding layer can be post-cured or appropriately adjusted to a length of 5 degrees in accordance with the polishing apparatus to be used. Further, the long-grinding layer is formed by a process of forming a textured structure on the polished surface to constitute a long polishing pad.
研磨領域之平均氣泡徑宜為3〇〜8〇叫,且更為理想的 是3卜60阿。若脫離該範圍,則會有研磨速度降低或研磨 後之被研磨材(晶圓)的可平面性(平坦性)降低之傾向。 研磨領域之厚度並無特殊之限制, 4mm,且以1〜2.5mm為佳。 然而通常為0.8 研磨領域之比重宜為〇.5〜u。若比重小於〇5,則研 磨表面之強度會降低,且會有被研磨材之可平面性(平坦性) ϋ肖3方面’若大於13,則於研磨表面之微細 氣泡數會減少,且雖然平坦化特性良好,然而卻有研磨速 度惡化之傾向。 研磨領域之硬度藉由亞斯卡D硬度計宜為45 〜70度。若 D硬度錢45度,齡有被研料之可平錄(平坦性)惡化 之傾向3丨面,右大於7〇度,則雖然可平面性良好, 20然而卻有被研磨材之-致性(均—性)惡化之傾向。 又,依據與前述相同之理由,研磨領域之厚度誤差宜 為ΙΟΟμηι以下。 透光領域之厚度並無特殊之限制,然而,宜作成與研 磨領域之厚度相同的厚度或該厚度以下。透光領域比研磨 35 200831236 領域厚時,會有研磨中因突出之部分而刮傷被研磨體之虞。 於第2本發明之長研磨射,與被研磨材(晶圓)接觸之 研磨表面宜與前述相同地具有用以保持、更新漿液之凹凸 結構。 5 另一方面,第8及9圖係第3本發明之長研磨墊8之截面 圖。長研磨領域9係由具有微細氣泡之聚胺基甲酸_發泡體 所構成,又,聚胺基甲酸酯之原料係與前述相同。 im聚胺基甲酸酿發泡體係藉由使氣泡分散胺基甲酸 i组成物硬化而製造,且前述氣泡分散胺基甲酸i组成物 10係混合具有含異純酉旨基化合物之第1成分及具有含活性 氯基化合物之第2成分所得到者。前述氣泡分散胺基甲酸酿 組成物可藉由與前述相同之方法來調製。 於第3本發明中所使用之分隔件原料並無特殊之限 制,舉例言之,可列舉如:聚胺基甲酸酯樹脂、聚酯樹脂、 b聚醯胺樹脂、纖維素系樹脂、丙烯酸樹脂、聚碳酸醋樹脂、 故樹脂、聚苯乙烯及烯烴系樹脂等熱可塑性樹脂;丙稀酸 樹脂、聚胺基甲酸醋樹脂、丙烯酸胺基甲酸酯樹脂、苯酚 樹脂及環氧樹脂等熱硬化性樹脂;天然橡膠、異戊二歸橡 膠、丁二烯橡膠、氯丁二稀橡黟、苯乙稀—丁二婦橡膠、 2〇再生橡膠及聚異丁烯橡膠等橡膠;二甲基聚石夕氧燒及二苯 基聚石夕氧烧等石夕樹脂等。藉由使用熱可塑性樹脂,而可於 捲繞狀態下保存及供給至面材上,因此較為理相,特別S 若由可撓似賴性之魅來看,靠使料_。、*疋 分隔件之形狀並無特殊之限制,然而宜為截面呈㈣ 36 200831236 者’此時’兔度可考慮形狀安定性而宜為5〜1,且更 為理想的是透光領域之寬度以下,又,高度宜為長研磨領 域之厚度的10〜50%,且更為理想的是15〜40%。分隔件之 長度並無特殊之限制,可為長形(數m),亦可為短形(數cm 5〜數十cm),又,舉例言之,分隔件可藉由下述方法等來製 造,即:藉由押出成形來形成;將業已押出成形為圓筒狀 之樹脂塊切成螺旋狀而形成為帶狀;及以預定寬度及長度 將樹脂片切斷。 透光領域10a及l〇b之形成材料並無特殊之限制,可列 10舉如與前述相同者。若使用具有芳族烴基之樹脂,則由於 會有短波長側之透光率降低之傾向,因此不宜使用此種樹 脂,又,宜使用熱可塑性樹脂,特別是宜使用熱可塑性聚 胺基甲酸酯樹脂。 舉例言之,透光領域l〇a可藉由押出成形法或澆鑄成形 15法來製作,又,透光領域l〇a之截面形狀並無特殊之限制, 然而宜呈矩形,此時,透光領域1〇&之寬度可考慮形狀安定 性及擴大、確保研磨領域而宜為5〜15mm,又,為了防止 研磨時因加壓所造成之透光領域之變形,透光領域1〇a之寬 度宜為分隔件之寬度以上。透光領域l〇a之厚度宜為長研磨 20領域9之厚度的50〜90%,且更為理想的是60〜85%,又, 透光領域10a之長度並無特殊之限制,可為長形(數,亦 可為短形(數cm〜數十cm),又,宜配合前述分隔件之長度。 另一方面,舉例言之,凹型透光領域l〇b可藉由押出成 形法或澆鑄成形法來製作,又,如第1〇圖所示,以預定間 37 200831236 隔於樹脂片29上施行多數溝加工,然後朝長度方向切斷凸 部之中央,藉此,可有效地製作具有凹部30之長(數m)透光 領域10b。第11圖係以寬度方向切斷樹脂片29之截面圖,透 光領域10b之寬度(W)可考慮形狀安定性及擴大、確保研磨 5 領域而宜為1〇〜15mm,又,透光領域10b之厚度(H)可考慮 長研磨領域9之厚度而適當地調整。凹部3〇之寬度(w)可考 慮形狀安定性及雷射光之入射領域而宜為5〜10mm,凹部 30之深度⑻宜為透光領域之厚度(H)的1〇〜5〇%,且更為理 # 想的是15〜40%。 10 又,以預定間隔於樹脂片29上形成多數凹部30,然後 將凸部之中央切斷成格子狀,藉此,可有效地製作具有凹 部30之短(數cm〜數十cm)透光領域丨〇b。另,短透光領域勘 之寬度(W)與厚度(H)及凹部30之寬度(w)與深度(h)係與前 述相同。 15 於第3本發明中所使用之透明支持膜11並無特殊之限 制,可列舉如與前述相同者。 以下况明製造第3本發明之長研磨墊之方法,第12圖係 . _示第3本發明之長研耗之製造程序例之示意圖。 • 、右考慮所要求之長研磨領域之長度,則長模24之長度 L系為5 l5m,且較為理想的是7〜i〇m,若考慮所要求之 、研磨員域之大小’則見度宜為6〇〜㈣⑽,又,若由所要 二長研磨7員域之厚度及洗鑄時防止溢流之觀點來看,則 回度且為1 〇〜6〇mm 0 百先,以積層狀態將分隔件與透光領域1〇a配置、固定 38 200831236 於長模24之預定位置,此時,可先將分隔件配置於模内再 於該分隔件上積層透光領域10a,或者亦可相反。又,長形 分隔件及透光領域l〇a可僅於模内設置一個,或者亦可設置 複數個,然而,為了增加研磨領域之面積以提高研磨效率, 且僅於模之寬度方向中央設置一個,又,使用短形分隔件 及透光領域10a時’宜以預定間隔於模之寬度方向中央設置 複數個。The average bubble diameter in the field of grinding is preferably 3 〇 8 〇 ,, and more ideally 3 卜 60 Å. When it is out of this range, the polishing rate is lowered or the flatness (flatness) of the material to be polished (wafer) after polishing tends to decrease. The thickness of the grinding field is not particularly limited, 4 mm, and preferably 1 to 2.5 mm. However, the proportion of the 0.8 grinding field is usually 〇.5~u. If the specific gravity is less than 〇5, the strength of the polished surface will be lowered, and the flatness (flatness) of the material to be polished will be improved. If it is greater than 13, the number of fine bubbles on the polished surface will decrease, and although The flattening property is good, but there is a tendency that the polishing speed is deteriorated. The hardness in the field of grinding is preferably from 45 to 70 degrees by means of an Askar D hardness tester. If the D hardness is 45 degrees, the age of the material can be flattened (flatness), the tendency to deteriorate is 3 ,, and the right is greater than 7 ,, although the flatness is good, 20 has the material to be polished. Sexuality (homogeneity) tends to deteriorate. Further, for the same reason as described above, the thickness error in the polishing field is preferably ΙΟΟμηι or less. The thickness of the light-transmitting field is not particularly limited, however, it is preferable to form the same thickness as the thickness of the grinding field or less. Transparency field specific grinding 35 200831236 When the field is thick, there is a possibility that the object to be polished is scratched due to the protruding portion during the grinding. In the long polishing shot of the second aspect of the invention, the polishing surface which is in contact with the material to be polished (wafer) preferably has a concavo-convex structure for holding and renewing the slurry as described above. On the other hand, Figs. 8 and 9 are cross-sectional views of the long polishing pad 8 of the third invention. The long-polishing field 9 is composed of a polyaminocarbamic acid-foam having fine bubbles, and the raw material of the polyurethane is the same as described above. The im polyaminic acid brewing foaming system is produced by curing the bubble-dispersed urethane composition, and the bubble-dispersed urethane composition 10 is mixed with the first component containing the iso-purine-based compound and A compound having a second component containing an active chlorine-based compound. The above-mentioned bubble-dispersed ureidocarboxylic acid brewing composition can be prepared by the same method as described above. The separator raw material used in the third invention is not particularly limited, and examples thereof include, for example, a polyurethane resin, a polyester resin, a b-polyamide resin, a cellulose resin, and acrylic acid. Thermoplastic resin such as resin, polycarbonate resin, resin, polystyrene and olefin resin; heat of acrylic resin, polyurethane resin, urethane resin, phenol resin and epoxy resin Curing resin; rubber such as natural rubber, isoprene rubber, butadiene rubber, neoprene rubber, styrene-butadiene rubber, 2-inch recycled rubber and polyisobutylene rubber; dimethyl polystone Oxygen-fired, diphenyl poly-stone, etc., such as Shixia resin. By using a thermoplastic resin, it can be stored and supplied to the face material in a wound state. Therefore, it is more reasonable, and in particular, S is made of a flexible material. The shape of the * 疋 partition is not particularly limited, but it should be a cross section (4) 36 200831236. At this time, the rabbit degree can be considered to be 5 to 1 in shape stability, and more preferably in the field of light transmission. Below the width, the height is preferably 10 to 50% of the thickness of the long abrasive field, and more desirably 15 to 40%. The length of the separator is not particularly limited, and may be an elongated shape (several m) or a short shape (a few cm 5 to several tens of cm). Further, for example, the separator may be obtained by the following method or the like. Manufactured, that is, formed by extrusion molding; a resin block which has been extruded into a cylindrical shape is cut into a spiral shape to form a strip shape; and the resin sheet is cut at a predetermined width and length. The material for forming the light-transmitting regions 10a and 10b is not particularly limited, and may be the same as described above. When a resin having an aromatic hydrocarbon group is used, since the light transmittance on the short-wavelength side tends to decrease, it is not preferable to use such a resin, and a thermoplastic resin is preferably used, and in particular, a thermoplastic polyamic acid is preferably used. Ester resin. For example, the light-transmitting field l〇a can be produced by the extrusion forming method or the casting forming method, and the cross-sectional shape of the light-transmitting field l〇a is not particularly limited, but it is preferably rectangular. The width of the light field 1〇& can be considered to be 5 to 15 mm in shape stability and expansion, and to ensure the grinding field. In order to prevent deformation in the light transmission field caused by pressurization during polishing, the light transmission field is 1〇a. The width should preferably be greater than the width of the divider. The thickness of the light-transmitting field l〇a is preferably 50 to 90% of the thickness of the long-grinding 20 field 9, and more preferably 60 to 85%. Further, the length of the light-transmitting field 10a is not particularly limited, and The elongated shape (the number may also be a short shape (several cm to several tens of cm), and it is preferable to match the length of the aforementioned partition member. On the other hand, for example, the concave light-transmitting field l〇b may be formed by extrusion molding Alternatively, it can be produced by a casting method, and as shown in FIG. 1 , a plurality of groove processing is performed on the resin sheet 29 in a predetermined space 37 200831236, and then the center of the convex portion is cut in the longitudinal direction, thereby effectively A long (several m) light-transmitting field 10b having a concave portion 30 is formed. Fig. 11 is a cross-sectional view of the resin sheet 29 cut in the width direction, and the width (W) of the light-transmitting field 10b can be considered for shape stability and expansion to ensure grinding. 5 The field is preferably 1 to 15 mm, and the thickness (H) of the light-transmitting field 10b can be appropriately adjusted in consideration of the thickness of the long-polishing field 9. The width (w) of the concave portion 3 can take shape stability and laser light. The incident field is preferably 5 to 10 mm, and the depth (8) of the recess 30 is preferably 1 to 5 厚度 of the thickness (H) of the light transmission field. %, and more is considered to be 15 to 40%. 10 Further, a plurality of concave portions 30 are formed on the resin sheet 29 at predetermined intervals, and then the center of the convex portion is cut into a lattice shape, whereby it can be efficiently produced. There is a short (number of cm to tens of cm) light transmission field 凹b of the concave portion 30. In addition, the width (W) and the thickness (H) of the short light transmission field and the width (w) and depth (h) of the concave portion 30 The transparent support film 11 used in the third aspect of the invention is not particularly limited, and the same as the above may be mentioned. The method for producing the long polishing pad of the third invention is as follows. Fig. _ shows a schematic diagram of a manufacturing procedure example of the third invention of the present invention. • The length of the long mold 24 is 5 l5 m, and it is desirable to consider the length of the long grinding field required by the right. 7~i〇m, if considering the size of the required grinding field, then the degree should be 6〇~(4)(10), and if the thickness of the 7-member field is to be polished by the desired length and the overflow prevention during washing, In view of the degree, the degree of return is 1 〇~6〇mm 0 百先, and the partition and the light-transmitting area 1〇a are arranged and fixed in a laminated state. 38 200831236 In the predetermined position of the long mold 24, at this time, the partition member may be disposed in the mold and then the light-transmitting field 10a may be laminated on the partition member, or vice versa. Moreover, the elongated partition member and the transparent field l〇a It may be provided only in the mold, or may be provided in plural. However, in order to increase the area of the grinding field to improve the grinding efficiency, and only one of the centers in the width direction of the mold is used, and the short partition and the transparent field are used. At 10a, it is preferable to set plural numbers at the center in the width direction of the mold at predetermined intervals.
另一方面,使用凹型透光領域1〇b時,係配置、固定於 模之預定位置且使凹部3〇形成於下侧,又,與前述相同, 宜僅於杈之寬度方向中央設置一個,又,使用短形凹型透 光領域10 b時,宜以預定間隔於模之寬度方向中央且朝長度 方向設置複數個。 固定之方法並無特殊之限制,舉例言之,可列舉如: 使用雙面膠帶來黏合之方法;自分隔件及透光領域上施加 15 壓力而抵壓於模底面之方法等。 然後,於未配置有分隔件及透光領域1〇a或凹型透光領 域10b之領域吐出前述氣泡分散胺基甲酸酯組成物23,並使 該氣泡分散胺基甲酸酯組成物硬化而製作由聚胺基甲酸酯 發泡體所構成之長研磨領域9。氣泡分散胺基曱酸酯組成物 20 23之吐出里可考慮長研磨領域之厚度及面積而適當地調 整。 舉例&之’氣泡分散胺基甲酸酯組成物23之硬化係於 均勻地調整厚度後藉由使其通過設置於輸送機上之加熱烘 箱内來進行,加熱溫度係40〜l〇〇t:,加熱時間則為5〜1〇 39 200831236 分鐘。將反應至不會流動為止之氣泡分散胺基甲酸酯組成 物進行加熱、後固化係具有提升聚胺基甲酸酯發泡體之物 理特性之效果。 然後,將業已一體成形之透光領域及長研磨領域自長 5 模脫模,且於第3 — A本發明之製造方法時自長研磨領域剝 離分隔件。 另一方面,第13圖係顯示第3本發明之長研磨墊其他製 造例之示意圖。 氣泡分散胺基曱酸酯組成物23係藉由機械泡沫法來調 10 製,所謂機械泡沫法係如下述之方法,即:將原料成分放 入混合頭32之混合室内,同時混入前述非反應性氣體,並 藉由以奥克斯(OAKS)混合器等混合器進行混合攪拌,而將 非反應性氣體作成微細氣泡狀態且使其分散於原料混合物 中。由於機械泡沫法可藉由調節非反應性氣體之混入量而 15 輕易地調整聚胺基甲酸酯發泡體之密度,因此為理想之方 法。 自輥子所送出之面材33係於輸送機34上移動,首先, 藉由自輥子等送出,以積層狀態將分隔件及透光領域10a配 置、固定於該面材33之内部預定位置,此時,可先將分隔 20件配置於面材33上再於該分隔件上積層透光領域i〇a,或者 亦可相反。又,長形分隔件及透光領域1〇a可僅於面材33上 設置一個,或者亦可設置複數個,然而,依據與前述相同 之理由,宜僅於面材33之寬度方向中央設置一個,又,使 用短形分隔件及透光領域1(^時,宜以預定間隔於面材33之 40 200831236 寬度方向中央且朝長度方向設置複數個。 另一方面,使用凹型透光領域10b時,係配置、固定於 面材33或透明支持膜!丨之預定位置且使凹部邛形成於下 側,又,與前述相同,宜僅於面材33或透明支持膜丨丨之寬 5度方向中央設置一個,又,使用短形凹型透光領域1〇b時, 宜以預定間隔於面材33或透明支持膜u之寬度方向中央且 朝長度方向設置複數個。藉由使用透明支持膜丨丨以取代面 材33,在製作過長研磨領域後可省略於具有前述凹部邓之 面侧積層透明支持膜之程序,因此在製造效率之觀點上較 10 為理想。 所使用之面材並無特殊之限制,舉例言之,可列舉如: 紙、布、不織布及樹脂膜等,然而,特別是以具有^熱性 同時具有可撓性之樹脂膜為佳。 舉例言之,形成面材之樹脂可列舉如:聚對苯二甲酸 15乙二醋、?«'聚乙稀、聚丙烯、聚苯乙烯、聚酿亞胺、 聚乙烯醇、聚氯乙烯、聚說乙烯等含氣樹脂、尼龍、纖維 素等。 面材之厚度並無特殊之限制,然而,若由強度或捲繞 等觀點來看,則宜為20〜200μηι,又,面材之寬度亦無特 2〇殊之限制’然而,若考慮所要求之長研磨領域之大小,則 宜為60〜250cm。 另,面材之表面宜施行脫模處理,藉此,於製作過長 研磨領域後可輕易地進行面材之剝離操作。 然後,於未配置有分隔件及透光領域1〇a或凹型透光領 200831236 朗b±之特33或透明讀膜11上,自混合㈣之吐出噴 嘴連續地吐出前述氣泡分散胺基甲酸醋組成物23。面材33 或透明切膜11之移動速度或氣泡分散胺基甲酸醋組成 物23之吐出量可考慮長研磨領域之厚度及面積而適當地調 5 整。 後,於所吐出之前述氣泡分散胺基甲酸酯組成物Μ 上積層面材33,同時均勻地調整厚度,並藉由使氣泡分散 fe基曱酉欠酉曰組成物23硬化而製作由聚胺基曱酸酯發泡體所 構成之長研磨領域9。舉例言之,均勻地調整厚度之機構可 1〇列舉如··軋輥、塗料輥等輥子35、刮刀片等,又,舉例言 之,氣泡分散胺基甲酸酯組成物23之硬化係於均勻地調整 厚度後藉由使其通過設置於輸送機上之加熱烘箱(未圖示) 内來進行,加熱溫度係4〇〜i〇〇°c,加熱時間則為5〜1〇分 鐘。 15 然後’自業已一體成形之透光領域及長研磨領域剝離 面材,且於第3 —A及第3 —C本發明之製造方法時自長研磨 領域剝離分隔件。 舉例言之,所得到之透光領域及長研磨領域係藉由裁 切機裁切成數米之布匹狀,長度可依照所使用之研磨裝置 20 適當地調整,然而通常為5〜15m,且較為理想的是7〜 10m。另,亦可於剝離面材前進行後固化,且亦可於剝離面 材後進行後固化,然而,通常由於面材與研磨頜域之熱收 縮率不同,因此,若由防止研磨領域變形之觀點來看’則 宜於剝離面材後進行後固化。於後固化後,為了調整長度 42 200831236 及使厚度均勻,亦可裁姆去長研磨領域之端部 氣泡徑、比重及硬度 前述聚胺基甲酸酯發泡體之平均_ 係與前述相同。 與被研磨材(晶圓)接觸之 以保持、更新漿液之凹凸 於第3本發明之長研磨墊中, 5研磨表面宜與前述相同地具有用 結構。On the other hand, when the concave light-transmissive field 1〇b is used, it is disposed at a predetermined position of the mold and the concave portion 3〇 is formed on the lower side, and, as described above, it is preferable to provide only one in the center in the width direction of the crucible. Further, when the short concave light-transmissive field 10b is used, it is preferable to provide a plurality of holes in the center in the width direction of the mold at a predetermined interval and in the longitudinal direction. The method of fixing is not particularly limited, and examples thereof include a method of bonding using a double-sided tape, and a method of applying 15 pressure from the separator and the light-transmitting field to press against the bottom surface of the mold. Then, the bubble-dispersed urethane composition 23 is discharged in a region where the separator and the light-transmitting region 1a or the concave-type light-transmitting region 10b are not disposed, and the bubble-dispersed urethane composition is cured. A long-grinding field 9 composed of a polyurethane foam was produced. The discharge of the bubble-dispersed amino phthalate composition 20 23 can be appropriately adjusted in consideration of the thickness and area of the long-grinding field. For example, the hardening of the bubble-dispersed urethane composition 23 is carried out by uniformly adjusting the thickness and then passing it through a heating oven provided on a conveyor, and the heating temperature is 40 to l〇〇t :, heating time is 5~1〇39 200831236 minutes. The bubble-dispersed urethane composition which has been reacted until it does not flow is heated and post-cured has an effect of improving the physical properties of the polyurethane foam. Then, the light-transmissive field and the long-grinding field which have been integrally formed are demolded from the long mold, and the separator is peeled off from the long-grinding field in the manufacturing method of the third invention. On the other hand, Fig. 13 is a view showing another example of the manufacture of the long polishing pad of the third invention. The bubble-dispersed amino phthalate composition 23 is prepared by a mechanical foaming method, and the so-called mechanical foaming method is a method in which a raw material component is placed in a mixing chamber of the mixing head 32 while being mixed with the aforementioned non-reactive reaction. The gas is mixed and stirred by a mixer such as an OAKS mixer, and the non-reactive gas is made into a fine bubble state and dispersed in the raw material mixture. Since the mechanical foam method can easily adjust the density of the polyurethane foam by adjusting the amount of the non-reactive gas to be mixed, it is an ideal method. The surface material 33 sent from the roller is moved by the conveyor 34. First, the separator and the light-transmitting region 10a are placed and fixed in a predetermined state inside the surface material 33 by being fed from a roller or the like. In this case, the partition 20 may be first disposed on the face material 33 and then the light-transmitting field i〇a may be laminated on the partition member, or vice versa. Further, the elongated partition member and the light-transmitting region 1a may be provided only on the face member 33, or may be provided in plural. However, for the same reason as described above, it is preferable to set only in the center of the width direction of the face member 33. One, in addition, when using the short partition and the light-transmissive field 1 (^, it is preferable to set the plural in the center of the width direction at a predetermined interval from the surface of the face material 33, 200831236. On the other hand, the concave light-transmissive field 10b is used. When it is disposed, it is fixed to the predetermined position of the face material 33 or the transparent support film! 且 and the concave portion 邛 is formed on the lower side, and, as described above, it is preferable that only the width of the face material 33 or the transparent support film is 5 degrees. One of the center of the direction is provided, and when the short concave-type light-transmissive field 1 〇b is used, it is preferable to set a plurality of the longitudinal direction of the face material 33 or the transparent support film u at a predetermined interval in the longitudinal direction. In place of the surface material 33, the surface material 33 can be omitted from the surface of the transparent support film having the surface of the recessed portion. Therefore, it is preferable to use 10 in terms of manufacturing efficiency. The specific limitation is, for example, a paper, a cloth, a non-woven fabric, a resin film, etc., however, it is preferable to use a resin film having heat and flexibility, for example, a resin for forming a face material. For example, polybutylene terephthalate, ethylene glycol, polystyrene, polystyrene, polyvinyl alcohol, polyvinyl chloride, polystyrene, gas-containing resin, nylon , cellulose, etc. The thickness of the face material is not particularly limited. However, from the viewpoint of strength or winding, it is preferably 20 to 200 μm, and the width of the face material is not particularly limited. However, in consideration of the size of the long grinding field required, it is preferably 60 to 250 cm. In addition, the surface of the face material should be subjected to a mold release treatment, whereby the peeling of the face material can be easily performed after the long grinding field is produced. Then, the bubble-dispersing amine group is continuously discharged from the mixing nozzle of the mixing (4) without being disposed with the separator and the light-transmitting field 1〇a or the concave-shaped light-transmissive beam 200831236 朗b±33 or the transparent reading film 11. Formic acid hydrate composition 23. Surface material 33 or transparent The moving speed of the film 11 or the discharge amount of the bubble-dispersed urethane composition 23 can be appropriately adjusted in consideration of the thickness and area of the long-grinding field. Thereafter, the bubble-dispersed urethane composition is discharged.层面 The layer material 33 is stacked, and the thickness is uniformly adjusted, and the bubble-dispersed composition is hardened to form a long-polishing field 9 composed of a polyamino phthalate foam. For example, a mechanism for uniformly adjusting the thickness may be exemplified by a roller 35 such as a roll or a coating roller, a doctor blade, etc., and, for example, the hardening of the bubble-dispersed urethane composition 23 is uniform. The thickness is adjusted and then passed through a heating oven (not shown) provided on the conveyor. The heating temperature is 4 〇 to i 〇〇 ° c, and the heating time is 5 to 1 〇 minutes. 15 Then, the self-contained light-transmissive field and the long-polishing field are peeled off from the surface material, and the separators are peeled off from the long-grinding field in the manufacturing methods of the third to third and third to third embodiments. For example, the obtained light-transmitting field and the long-grinding field are cut into a number of meters by a cutting machine, and the length can be appropriately adjusted according to the grinding device 20 used, but usually 5 to 15 m, and More ideally 7 to 10m. In addition, post-curing may be performed before the surface material is peeled off, and post-curing may be performed after the surface material is peeled off. However, since the heat shrinkage rate of the surface material and the abrasive jaw region is usually different, if it is prevented from being deformed by the grinding field, From the point of view, it is appropriate to post-cure after peeling off the facestock. After the post-curing, in order to adjust the length of 42 200831236 and make the thickness uniform, it is also possible to cut the end of the long grinding field. The cell diameter, specific gravity and hardness The average of the polyurethane foam is the same as described above. It is in contact with the material to be polished (wafer) to hold and renew the unevenness of the slurry. In the long polishing pad of the third aspect of the invention, it is preferable that the polishing surface has the same structure as described above.
1515
長研磨摘之厚度亚無特殊之限制,然而通常為〜 4rnm,且以1〜2.5mm為佳。 …又,依據與前述相同之理由,長研磨領域之厚度誤差 且為ΙΟΟμηι以下。 、 知然後,於長研磨領域業已剝離分隔件之面側或透光領 或具有凹部之面側積層透明支持膜,並製作於透光領域與 透月支持膜間具有空間部36之長研磨層。 、舉例言之,於前述長研磨領域9積層透明支持膜11之方 务可列舉如··藉由雙面膠帶37將長研磨領域9與透明支持膜 爽住並加壓之方法;於長研磨領域9之前述面侧塗布接著 d而黏合透明支持膜丨丨之方法等,不過,於透明支持膜^ 上對應於空間部36之部分必須未設置有雙面膠帶37或接著 劑。 長研磨層之長度或寬度可依照所使用之研磨裝置適當 地调整,然而長度通常為5〜15m,寬度通常為60〜25〇cm。 第1〜第3本發明之長研磨墊亦玎為黏合有前述長研磨 層與緩衝片(緩衝層)者。The thickness of the long grinding is not particularly limited, but is usually 〜4rnm, and preferably 1 to 2.5 mm. ... Again, for the same reason as described above, the thickness error in the long grinding field is ΙΟΟμηι or less. It is known that in the field of long grinding, the surface of the separator has been peeled off or the transparent collar or the surface of the separator has a transparent support film, and a long abrasive layer having a space portion 36 between the light-transmitting field and the moon-receiving film is produced. . For example, in the above-mentioned long-polishing field, the method of laminating the transparent support film 11 can be exemplified by a method of cooling and pressurizing the long-polished field 9 and the transparent support film by the double-sided tape 37; The surface of the field 9 is coated with the transparent support film 接着 followed by d, but the double-sided tape 37 or the adhesive must not be provided on the portion of the transparent support film corresponding to the space portion 36. The length or width of the long abrasive layer can be suitably adjusted in accordance with the polishing apparatus used, but the length is usually 5 to 15 m and the width is usually 60 to 25 cm. The long polishing pad of the first to third aspects of the present invention is also characterized in that the long polishing layer and the buffer sheet (buffer layer) are bonded together.
前述緩衝片係彌補研磨層之特性者,又,緩衝片係C Μ P 43 200831236 中2以兼顧呈互償關係之可平面性與__致_ % 所谓可:面性係指研磨過具有於圖案形成時所產生之微小 凹凸的晶圓時於圖案部之平坦性, μ 所明一致性則指晶圓全 體之均—性。稭由發泡體片之特性改善 緩衝片之特性改善一致性,又’且猎由 缓於本發明之長研磨墊中, 綾衝片且使用比研磨領域柔軟者。 舉例言之,前述緩衝片可列舉如: 不織布⑯丙稀酸不織布等纖維錢布;如科過聚胺^ 10 15 不織布之樹脂浸潰不織布;聚胺基甲酸醋泡 、承乙細泡體等高分子樹脂發泡體;丁二歸橡膠、显戊 二烯橡膠等橡雜或感光性樹脂等。,、 —舉例言之,黏合長研磨層與緩衝片之方法可列舉如: 藉由雙面膠帶將長研磨層與緩衝片夾住並加壓之方法。 第1〜第3本發明之長研磨墊亦可在長研磨層或緩衝層 與層板接著之面側設置雙面膠帶。 20研磨 半導體元件係經過使用前述長研磨墊研磨半導體晶圓 之表面之程序來製造,又,所謂半導體晶圓一般係於矽曰 圓上積層配線金屬及氧化膜者。半導體晶圓之研磨方法、 研磨裝置並無特殊之限制,舉例言之,可藉由下述方法來 石if麻。 第14圖係顯示使用腹板型研磨裝置研磨半導體晶圓之 方法之示意圖。起初,長研磨墊8主要是盤繞在供給輥2la 上,又,若研磨多數半導體晶圓4,則使用完之領域之研磨 墊會藉由回收輥2lb來捲繞,同時未使用領域之研磨墊會隨 44 200831236 之自供給輥21a送出。 第15圖係顯示使用直線型研磨裝置研磨半導體晶圓之 方法之不意圖。長研磨墊8係配置成帶狀且可環繞輕子辦 轉,又,於直線式移動之研磨塾上_個接_㈣研 5 體晶圓4。 ' ㈣圖細讀職㈣研錢置研料導體晶圓之 紐之^®。長研錢8舰置絲狀且可於輥子22間往 i移動’又’於左右往復運動之研㈣上-個接—個地研 磨半導體晶圓4。 1〇 $,圖中雖未顯示,然而,通常前述研磨裝置係包含 有:研磨定盤(層板),係用以支持長研磨墊者;支持台(磨 ,頭),係用以支持半導體晶圓者;襯墊材料,係用以進行 2圓之均-加壓者;及研磨劑(漿液)之供給機構。研磨定盤 15 一支持台係配置成所分別支持之長研磨墊與半導體晶圓呈 、,狀心,且支持台具有旋轉軸。研磨時,使支持台旋轉 • =將半導體晶圓抵壓於長研磨墊,且一面供給漿液一面進 行研磨 ,又,漿液之流量、研磨負載及晶圓旋轉數等並無 • 特殊之限制,可適當地調整後進行。 ' 2〇 '此,可除去半導體晶圓表面突出之部分並研磨成平 以後,藉由切粒、接合、封裝等來製造半導體元件, 半;體元件係運用在運算處理裝置或記憶體等。 實施例 、後列舉實施例說明本發明,然而本發明並不限於 等實施例。 、 45 200831236 〔第1發明〕 實施例1 於容器内添加、混合溫度調整為7(TC之異氰酸酯末端 預聚合物(優耐陸(UNIROYAL)公司製造,亞次普雷 5 (ADIPRENE)L—325)100重量份、矽系界面活性劑(東麗道 康寧矽公司製造,SH—192)3重量份,並調整為80°C而進行 減壓脫泡,然後,使用雙軸混合器以旋轉數900rpm激烈地The above-mentioned buffer sheet compensates for the characteristics of the polishing layer, and the buffer sheet system C Μ P 43 200831236 2 can take into consideration the planarity of the mutual compensation relationship and the __ _ %. The flatness of the wafer at the time of the formation of the fine concavities and convexities generated during pattern formation, and the uniformity of μ means the uniformity of the entire wafer. The characteristics of the straw are improved by the characteristics of the foam sheet, and the characteristics of the cushion sheet are improved, and the slab is made of a long polishing pad which is slower than the present invention, and is used in a field which is softer than the polishing field. For example, the buffer sheet may be, for example, a fiber cloth such as a non-woven fabric 16 acrylic acid non-woven fabric; a resin impregnated non-woven fabric such as a polyamine/10 15 non-woven fabric; a polyurethane foam, a fine cellulose foam, etc. A polymer resin foam; a rubber or a photosensitive resin such as a butyl rubber or a pentamer rubber. For example, a method of bonding the long abrasive layer and the buffer sheet may be, for example, a method of sandwiching and pressurizing the long abrasive layer and the buffer sheet by a double-sided tape. The long polishing pad of the first to third inventions may be provided with a double-sided tape on the side of the long abrasive layer or the buffer layer and the back surface of the laminate. 20 Polishing The semiconductor element is manufactured by a process of polishing the surface of the semiconductor wafer using the long polishing pad. Further, the semiconductor wafer is generally formed by laminating a wiring metal and an oxide film on a circular circle. The polishing method and the polishing apparatus of the semiconductor wafer are not particularly limited. For example, the following method can be used. Figure 14 is a schematic view showing a method of polishing a semiconductor wafer using a web type polishing apparatus. Initially, the long polishing pad 8 is mainly wound on the supply roller 2la. Further, if a plurality of semiconductor wafers 4 are polished, the polishing pad of the used field is wound by the recovery roller 2lb, and the polishing pad of the unused field is used. It will be sent from the supply roller 21a with 44 200831236. Fig. 15 is a view showing a method of polishing a semiconductor wafer using a linear type polishing apparatus. The long polishing pad 8 is arranged in a strip shape and can be rotated around the lepton, and is further applied to the linearly moving polishing pad. ' (4) Figure carefully read (4) research money to set up the material of the conductor wafer ^ ^. The Changyan Qian 8 ship is placed in a wire shape and can be moved between the rollers 22 to i, and then the semiconductor wafer 4 is grounded on the ground (respectively). 1〇$, although not shown in the figure, however, the above-mentioned polishing apparatus generally includes: a polishing plate (layer) for supporting a long polishing pad; a support table (grinding head) for supporting a semiconductor The waferr; the gasket material is used to perform the two-round uniform-pressurization; and the abrasive (slurry) supply mechanism. The polishing platen 15 is provided with a support pad configured to support a long polishing pad and a semiconductor wafer, and has a center of rotation, and the support table has a rotating shaft. During polishing, the support table is rotated. • The semiconductor wafer is pressed against the long polishing pad, and the slurry is supplied while polishing. The flow rate of the slurry, the polishing load, and the number of wafer rotations are not limited. Properly adjusted. '2' This allows the semiconductor device to be removed from the surface of the semiconductor wafer and polished to a flat surface. The semiconductor device is fabricated by dicing, bonding, packaging, etc., and the body element is used in an arithmetic processing device or a memory. EXAMPLES The following examples are given to illustrate the invention, but the invention is not limited to the examples. 45 200831236 [1st invention] Example 1 was added to a container, and the mixing temperature was adjusted to 7 (TC isocyanate terminal prepolymer (UNIROYAL Co., Ltd., ADIPRENE L-325) 100 parts by weight of a lanthanoid surfactant (manufactured by Toray Dow Corning Co., Ltd., SH-192), 3 parts by weight, adjusted to 80 ° C for defoaming under reduced pressure, and then rotated at 900 rpm using a biaxial mixer Fiercely
攪拌約4分鐘’以於容器内取入氣泡。又,於其中添加業已 預先熔融至120°C之4,4,一亞甲雙(〇—氣苯胺)(井原(IHARA) 10 化學公司製造,居安明(CUAMINE)MT)26.2重量份,並將 該混合液攪拌約70秒鐘而調製發泡反應液。使該發泡反應 15 20 液流入長模(寬度80cm、長度520cm、高度3cm)中,且於該 混合液之流動性消失之時間點放入烘箱内,並以8〇〜85^ 進行12小時之後固化,同時得到聚胺基曱酸酯發泡體片(平 均氣泡徑:50μιη,比重:〇·86,硬度:55度)。 其次,使用拋光機(阿米特克(AMITEC)公司製造)進行 該聚胺基甲酸酯發泡體片之表面拋光處理,直到構成严产 1.1mm為止,並作成調整過厚度精度之聚胺基甲酸酯發、、包 體片。又,使用溝加工機(鐵克諾(TECHN〇y;司製迕),於 該聚胺基甲酸酯發泡體片之寬度方向中央部分進行溝+戶 6mm、溝深度0.7mm、溝長度5〇〇cm之架部用溝加上,/又 沿著所形成之溝之中央部分,藉由Ν1Ί^刀將前述聚胺1甲 酸酯發泡體片切斷成二個,然後,使用溝加工機(鐵克二: 司製造),於各聚胺基甲酸酯發泡體片表面進行、、籌=二 46 200831236 5 • 1mm、溝間距6mm、溝深度0.4mm之漿液用χ溝加工,並製 作二個具有架部之長研磨領域。 混合溫度調整為8 0 °C之異氰酸酯末端預聚合物(日本 聚胺基甲酸酯公司製造,C一2612)70重量份、三經甲基丙 烷9重量份及數量平均分子量650之聚四亞甲基_二醇21重 量份,並進行脫泡而調製透光領域形成材料。使該透光領 域形成材料流入長模(寬度80cm、長度5〇〇em、高度3mm) 中,且於材料之流動性消失之時間點放入烘箱内,並以1〇〇 〜105°C進行12小時之後固化,同時得到無發泡片。其次, 10 使用拋光機(阿米特克公司製造)進行該無發泡片之表面拋 光處理,直到構成厚度0.9mm為止,並作成調整過厚度精 度之無發泡片。又,使用溝加工機(鐵克諾公司製造),於無 發泡片之全面形成溝寬度6mm、溝長度5〇〇cm、溝間距 12mm、溝深度0.2mm之溝,然後,沿著溝之中央部分將全 15 • 部的溝切斷而製作多數高度(h)0.9mm、長度500cm之長透光 領域(肩部··寬度3mm、高度(X7mm,頭部:寬度6mm)。 於所製作之長透光領域之肩部塗布熱熔接著劑(岡本 中商事(股)’思博泰克(SUPERTECH)1942,EVA系,軟化 點88°C,於177°C下4000cps),並於常溫下放置約1小時。 20 將所製作之二個長研磨領域配置、固定於帶式輸送機 上’且如第2圖所揭示’使貫通孔以一定寬度(約6mm)形成 於架部與架部間,然後,將前述長透光領域配置於長研磨 領域之開口部内,並藉由膠帶暫時固定,使長透光領域不 會偏移而得到長片。又,使該長片移動,並使用溫度調節 47 200831236 為100°C之軋輥將長透光領域加熱按壓,並接著長透光領域 與長研磨領域而得到研磨片,然後,將暫時固定膠帶剝離, 並使用層壓機將雙面膠帶(積水化學工業公司製造,# 5782W)黏貼在研磨片與溝加工面相對側之面上。又,藉由 5 NT切刀將對應於長透光領域之位置之前述雙面膠帶切 下,又,使用層壓機,將透明支持膜(東洋紡織公司製造, E5001,PET膜,厚度75μπι)黏合於前述雙面膠帶上而製作 長研磨墊。 〔第2發明〕 10 實施例1 於容益内添加、混合溫度調整為7〇°c之異氰酸酯末端 預聚合物(優耐陸公司製造,亞次普雷L—325)100重量份、 碎糸界面活性劑(東麗道康卞碎公司製造,SH — 192)3重量 份,並調整為8〇°C而進行減壓脫泡,然後,使用雙軸混合 15 器以旋轉數9〇〇rpm激烈地攪拌約4分鐘,以於容器内取入氣 泡。又,於其中添加業已預先炼融至12〇°c之4 4,一亞曱雙 (〇—氯苯胺)(井原化學公司製造,居安明Μτ)26·2重量份, 並將該混合液授拌約7〇秒鐘而調製氣泡分散胺基曱酸醋組 成物。 20 混合溫度調整為80 ◦之異氰酸酯末端預聚合物(日本 聚胺基甲酸酯公司製造,C —2612)100重量份、三羥曱基丙 烧9重ΐ伤及數1平均分子量650之聚四亞甲基醚二醇21重 量份,並進行脫泡而調製透光領域形成材料。 於表面塗布有鐵氟龍(注冊商標)之鋁所構成之底盤上 48 200831236 鋪上透明支持膜(PET,東洋紡織公司製造,E5001,厚度: 75μιη) ’並將表面塗布有鐵氟龍(註冊商標)之鋁所構成之長 模框(内部長度:520cm,内部寬度:80cm,内部高度:30mm) 配置於該透明支持膜上,然後,進行底盤與長模框之合模。 5透明支持膜係設置為前後2m比長模框大一點,然後,將第7 圖所示之形狀之脫模處理完的透光領域形成用模框(SUS 製’注入孔之長度:520cm,注入孔之寬度:I2mm,注入 壁之南度:30mm,注入壁之厚度:lmm)配置於長模框之 寬度方向中央。 10 又,於前述注入孔外之透明支持膜上吐出氣泡分散胺 基曱酸組成物,並於前述注入孔内之透明支持膜上吐出 透光領域形成材料,然後,將該長模放入溫度調節為8〇〜 85°C之烘箱中10小時而使氣泡分散胺基甲酸酯組成物及透 光領域形成材料硬化,並形成研磨領域及透光領域,然後, 15將透光領域形成用模框及長模框脫模而製作於透光領域與 研磨領域間具有間隙(1mm)之長研磨層(厚度:約2mm)。其 次,使用拋光機(阿米特克公司製造)將長研磨層之表面進行 拋光處理而將厚度調整為Mmm,又,使用溝加工機(東邦 鋼機公司製造),於該長研磨層之研磨領域表面施行溝加工 2〇 而製作長研磨墊。 〔第3發明〕 實施例1 於容器内添加、混合溫度調整為7(rc之異氮酸醋末端 預聚合物(優咖公司製造,亞次普雷L—325)⑽重量份、 49 200831236 矽系界面活性劑(東麗道康寧矽公司製造,SH—192)3重量 伤,並調整為80C而進行減壓脫泡,然後,使用雙軸混合 器以旋轉數900rpm激烈地攪拌約4分鐘,以於容器内取入氣 泡。又,於其中添加業已預先熔融至12〇。匸之4,4,一亞甲雙 5 (〇氯笨胺)(井原化學公司製造,居安明ΜΤ)26·2重量份, 並將該混合液攪拌約7〇秒鐘而調製氣泡分散胺基甲酸酯組 成物。 混合溫度調整為80。(:之異氰酸酯末端預聚合物(日本 聚胺基甲酸酯公司製造,C —2612)70重量份、三羥甲基丙 1〇燒9重量份及數量平均分子量650之聚四亞甲基醚二醇重 量份,並進行脫泡而調製透光領域形成材料。使該透光領 域形成材料流入長模(内部寬度8〇cm、内部長度52〇cm、内 部高度30mm)中,且於材料之流動性消失之時間點放入烘 箱内,並以100〜105°C進行12小時之後固化,同時得到無 15發泡片。其次,使用拋光機(阿米特克公司製造)進行該無發 /包片之表面拋光處理’直到構成厚度O gmni為止,並作成 調整過厚度精度之無發泡片。又,藉由切割機裁切該無發 泡片’並製作多數長透光領域(長度520cm、寬度i0mm、厚 度〇.6mm)。 20 將鐵氣龍(註冊商標)製長分隔件(長度520cm、寬度 10mm、厚度〇.5mm)配置於長模(内部寬度80cm、内部長度 520cm、内部高度30mm)之寬度方向中央,並藉由雙面膠帶 來固定,又,將前述長透光領域配置於該分隔件上,並藉 由雙面膠帶來固定。 50 200831236 又,於未配置有前述長分隔件及長透光領域之長模上 吐出前述氣泡分散胺基甲酸酯組成物並靜置約10分鐘,然 後,將該長模放入溫度調節為80〜85。〇之供箱中12小時而 使氣泡分散胺基曱酸酯組成物硬化並形成長研磨領域,然 5後,將長模脫模而自長研磨領域剝離鐵氟龍(註冊商標)製長 分隔件及雙面膠帶。其次,使用拋光機(阿米特克公司製造) 將長研磨領域之表面進行拋光處理而將厚度調整為 _ 1.1mm,又,使用溝加工機(東邦鋼機公司製造),於該長研 磨領域之表面施行X溝加工,然後,使用層壓機將雙面膠帶 10 (積水化學工業公司製造,#5782W)黏貼在長研磨領域與溝 加工面相對側之面上。又,藉*NT切刀將對應於長透光領 域之位置之前述雙面膠帶切下,又,使用層壓機,將透明 支持膜(東洋紡織公司製造,E5001,PET膜,厚度75μηι)黏 合於前述雙面膠帶上而製作長研磨塾。 15實施例2 • 混合溫度調整為80°C之異氰酸酯末端預聚合物(曰本 聚胺基甲酸酯公司製造,C —2612)70重量份、三羥甲基丙 、 燒9重量份及數量平均分子量650之聚四亞曱基醚二醇21重 ^ 量份,並進行脫泡而調製透光領域形成材料。使該透光領 2〇 域形成材料流入長模(内部寬度80cm、内部長度520cm、内 部而度30mm)中,且於材料之流動性消失之時間點放入烘 箱内,並以100〜105^進行12小時之後固化,同時得到無 發泡片。其次,使用拋光機(阿米特克公司製造)進行該無發 /包片之表面拋光處理,直到構成厚度1.1 mm為止,並作成 51 200831236 調整過厚度精度之無發泡片。又,使用溝加工機(鐵克諾公 司製造),於無發泡片之全面形成溝寬度6mm、溝長度 520cm、溝間距10mm、溝深度0.5mm之溝,然後,沿著凸 部之中央全部裁切而製作多數具有凹部(寬度6mm、深度 5 〇.5mm)之凹型長透光領域(長度520cm、寬度l〇mm、厚度 1.1mm) 〇 將前述長透光領域配置於長模(内部寬度8〇cm、内部長 度520cm、内部高度30mm)之寬度方向中央,且使凹部形成 於下侧,並藉由雙面膠帶來固定。 10 又’於未配置有前述長透光領域之長模上吐出前述氣 泡分散胺基甲酸酯組成物並靜置約1〇分鐘,然後,將該長 模放入溫度調節為80〜85°C之烘箱中12小時而使氣泡分散 胺基曱酸酯組成物硬化並形成長研磨領域,然後,將長模 脫模而自長研磨領域剝離雙面膠帶。其次,使用拋光機(阿 15米特克公司製造)將長研磨領域之表面進行拋光處理而將 厚度調整為Llmm,又,使用溝加1機(東邦鋼機公司製 造),於該長研磨領域之表面施行χ溝加工,然後,使用層 壓機將雙面膠帶(積水化學工業公司製造,#5782W)黏貼在 長研磨領域與溝加工面相對側之面上。又,藉*NT切刀將 2〇對應於凹部之位置之前述雙面膠帶切下,又,使用層壓機, 將透明支持膜(東洋紡織公司製造,E5〇〇1,pET膜,厚度 75μιη)黏合於前述雙面膠帶上而製作長研磨墊。 實施例3 (利用機械泡沫法之氣泡分散胺基甲酸酯組成物之調 52 200831236 製) 混合異氰酸酯末端預聚合物(優耐陸公司製造,亞次普 雷L—325)100重量份、矽系界面活性劑(東麗道康寧矽公司 製造,SF2938F)3重量份而溫度調節為80°C之混合物,及業 5已熔融至120°C之4,4’一亞甲雙(〇 —氯苯胺)(井原化學公司 製造,井原居安明Μ T) 2 6 · 2重量份係於吐出前在混合室内進 行混合,同時藉由機械式攪拌使空氣分散於該混合物中而 調製氣泡分散胺基甲酸酯組成物。 藉由雙面膠帶黏合於實施例1中所製作之長透光領域 10 與前述鐵氟龍(註冊商標)製長分隔件,再將雙面膠帶黏合於 該分隔件之單面上而得到積層構件。 送出由聚對苯二甲酸乙二酯(PET)所構成之面材(厚度 50μπι、寬度100cm),並於該面材之中央部連續地黏合前述 積層構件而以積層狀態連續地配置長分隔件與長透光領 15域,然後,於未配置有積層構件之面材上,自混合頭連續 地吐出前述氣泡分散胺基曱酸酯組成物。又,藉由其他由 PET所構成之面材(厚度5〇μΠι、寬度1〇〇cm)覆蓋氣泡分散胺 基甲酸酯組成物,並使用軋輥均勻地調整厚度,然後,藉 由加熱至80〜85°C而使該組成物硬化,並製作由聚胺基甲 20酸酯發泡體所構成之長研磨領域,然後,以520cm之長度裁 切該長研磨領域,並將面材、長分隔件及雙面膠帶剝離, 同時以8〇 C進行6小時之後固化而得到由長研磨領域與長 透光領域所構成之長研磨片。其次,使用拋光機(阿米特克 公司製造)將長研磨領域之表面進行拋光處理而將厚度調 53 200831236 5 • 10 整為1.1mm,又,使用溝加工機(東邦鋼機公司製造),於該 長研磨領域之表面施行X溝加工,然後,使用層壓機將雙面 膠帶(積水化學工業公司製造,# 57 82W)黏貼在長研磨領域 與溝加工面相對侧之面上。又,藉由NT切刀將對應於長透 光領域之位置之前述雙面膠帶切下,又,使用層壓機,將 透明支持膜(東洋紡織公司製造,E5001,PET膜,厚度75μπι) 黏合於前述雙面膠帶上而製作長研磨墊。 L圖式簡單說明J 第1圖係顯示於CMP研磨中所使用之研磨裝置之一例 之不意構造圖。 第2圖係顯示第1本發明之長研磨墊截面之一例之示意 圖。 第3圖係顯示以預定間隔形成有多數溝之樹脂片例之 示意圖。 15 第4圖係顯示以寬度方向切斷樹脂片時截面之一例之 • 示意圖。 第5圖係顯示第2本發明之長研磨墊截面之一例之示意 圖。 第6圖係顯示第2本發明之長研磨墊之製造程序例之示 20 意圖。 第7圖係顯示透光領域形成用模框之結構之一例之示 意圖。 第8圖係顯示第3本發明之長研磨墊截面之一例之示意 圖0 54 200831236 第9圖係顯示第3本發明之長研磨塾截面之一例之示意 圖。 第10圖係顯示以預定間隔形成有多數四部之樹脂片例 之示意圖。 5 第η圖係顯示以寬度方向切斷樹脂片晴截面之一例之 示意圖。 第12圖係顯示第3本發明之長研磨墊之製造程序示意 圖。Stir for about 4 minutes to take air bubbles into the container. Further, 26.2 parts by weight of 4,4, a monomethylene bis(anthraceneline aniline) (manufactured by IHARA 10 Chemical Co., Ltd., CUAMINE MT), which has been previously melted to 120 ° C, was added thereto, and The mixture was stirred for about 70 seconds to prepare a foaming reaction liquid. The foaming reaction 15 20 was poured into a long mold (width: 80 cm, length: 520 cm, height: 3 cm), and placed in an oven at a time when the fluidity of the mixed solution disappeared, and was carried out for 12 hours at 8 〇 to 85 °. Thereafter, it was cured, and a polyamino phthalate foam sheet (average bubble diameter: 50 μm, specific gravity: 〇·86, hardness: 55 degrees) was obtained. Next, the surface of the polyurethane foam sheet was subjected to surface polishing treatment using a polishing machine (manufactured by AMITEC Co., Ltd.) until a composition of 1.1 mm was strictly produced, and a polyamine having an adjusted thickness precision was prepared. Carbamate hair, coated tablets. Further, a groove processing machine (TECHN〇y; 迕制迕) was used to carry out a groove + household 6 mm, a groove depth of 0.7 mm, and a groove length in the central portion in the width direction of the polyurethane foam sheet. The 5 〇〇 cm frame is grooved, and/or along the central portion of the formed groove, the polyamine urethane foam sheet is cut into two pieces by a Ν1Ί^ knife, and then used. Ditch processing machine (Tieke II: manufactured by Siji), which is used for the surface of each polyurethane foam sheet, and is prepared for the sulcus of the slurry with a thickness of 6 mm 200831236 5 • 1 mm, a groove spacing of 6 mm, and a groove depth of 0.4 mm. Processing and making two long grinding fields with a frame. The isocyanate-terminated prepolymer with a mixing temperature of 80 °C (manufactured by Nippon Polyurethane Co., Ltd., C-2612) 70 parts by weight, three armor 9 parts by weight of a propane and 21 parts by weight of a polytetramethylene glycol of a number average molecular weight of 650, and defoaming to prepare a material for forming a light-transmitting region. The material for forming the light-transmitting region flows into a long mold (width 80 cm, length) 5〇〇em, height 3mm), and put into the oven at the time when the fluidity of the material disappears, and 1 After curing for 12 hours at 〇~105 ° C, a non-foamed sheet was obtained. Next, 10 the surface of the non-foamed sheet was polished using a polishing machine (manufactured by Amitoc) until a thickness of 0.9 mm was formed. And made a non-foamed sheet with adjusted thickness accuracy. Also, using a groove processing machine (manufactured by Tecno Corporation), the groove width is 6 mm, the groove length is 5 〇〇cm, the groove spacing is 12 mm, and the groove is formed in the entire non-foamed sheet. A groove having a depth of 0.2 mm, and then cutting all the grooves of the 15th portion along the central portion of the groove to produce a long light transmission field with a maximum height (h) of 0.9 mm and a length of 500 cm (shoulder width, width 3 mm, height ( X7mm, head: width 6mm). Apply hot-melt adhesive to the shoulder of the long light-transparent field (Okamoto, Ltd.), SUPERTECH 1942, EVA, softening point 88 °C, At 177 ° C, 4000 cps), and placed at room temperature for about 1 hour. 20 The two long grinding fields were placed and fixed on the belt conveyor 'and as shown in Figure 2, the through hole is fixed. The width (about 6 mm) is formed between the frame portion and the frame portion, and then the length is The light field is disposed in the opening portion of the long-grinding field, and is temporarily fixed by the tape so that the long light-transmitting field is not offset to obtain a long piece. Further, the long piece is moved, and the temperature adjustment 47 is used, and the temperature is adjusted to 100 ° C. The roll heats and presses the long light-transmitting field, and then obtains the abrasive sheet in the long-transparent field and the long-grinding field, and then peels off the temporary fixing tape, and uses a laminating machine to make the double-sided tape (made by Sekisui Chemical Co., Ltd., # 5782W) adhered to the opposite side of the abrasive sheet and the groove processing surface. Further, the double-sided tape corresponding to the position of the long light-transmitting field is cut by a 5 NT cutter, and the laminate is used to be transparent. A support film (manufactured by Toyobo Co., Ltd., E5001, PET film, thickness 75 μm) was bonded to the above-mentioned double-sided tape to prepare a long polishing pad. [Second invention] 10 Example 1 An isocyanate terminal prepolymer (manufactured by U.S.A., sub-Pulsing L-325) having a temperature adjusted to 7 〇 ° C in 100% by weight and broken 3 parts by weight of a surfactant (manufactured by Toray Dow Cornedew Co., Ltd., SH-192), and adjusted to 8 ° C for degassing under reduced pressure, and then using a biaxial mixing 15 to rotate a number of 9 rpm Stir vigorously for about 4 minutes to take in air bubbles in the container. In addition, 26 2 parts by weight of a mixture of 14 , 曱 (〇-chloroaniline) (manufactured by Iorihara Chemical Co., Ltd.), which has been pre-refined to 12 ° C, is added thereto, and the mixture is added. The bubble-dispersed amino phthalic acid vinegar composition was prepared by mixing for about 7 seconds. 20 100 parts by weight of an isocyanate-terminated prepolymer (manufactured by Nippon Polyurethane Co., Ltd., C-2612) with a mixing temperature of 80 100, 100 parts by weight of trishydroxypropyl propyl ketone, and 9 lumps of average weight of 650 21 parts by weight of tetramethylene ether glycol was defoamed to prepare a material for forming a light-transmitting region. On the chassis with aluminum coated with Teflon (registered trademark) on the surface 48 200831236 Laminated transparent support film (PET, manufactured by Toyobo Co., Ltd., E5001, thickness: 75μιη) 'and coated with Teflon (registered) The long mold frame (internal length: 520 cm, inner width: 80 cm, internal height: 30 mm) made of aluminum of the trademark) is placed on the transparent support film, and then the mold and the long mold frame are clamped. (5) The thickness of the transparent support film is set to be 2 m larger than the long mold frame, and then the shape of the transparent region formed by the release of the shape shown in Fig. 7 is formed (the length of the injection hole of SUS ': 520 cm, The width of the injection hole: I2 mm, the south of the injection wall: 30 mm, the thickness of the injection wall: 1 mm) is placed in the center of the width direction of the long mold frame. 10, a bubble-dispersed amino phthalic acid composition is discharged onto the transparent support film outside the injection hole, and a transparent field forming material is sputtered on the transparent support film in the injection hole, and then the long mold is placed in a temperature Adjusted to 8 〇 to 85 ° C in an oven for 10 hours to make the bubble-dispersed urethane composition and the light-transmitting field forming material harden, and form the field of polishing and light transmission, and then, 15 to form the light-transmitting field The mold frame and the long mold frame were demolded to produce a long abrasive layer (thickness: about 2 mm) having a gap (1 mm) between the light transmitting field and the polishing field. Next, the surface of the long polishing layer was polished by a polishing machine (manufactured by Amitoc) to adjust the thickness to Mmm, and a groove processing machine (manufactured by Toho Steel Co., Ltd.) was used to grind the long polishing layer. A long polishing pad is produced by performing a groove processing on the surface of the field. [3rd invention] Example 1 was added to a container, and the mixing temperature was adjusted to 7 (rc isocyanuric acid terminal prepolymer (manufactured by Yosemite Co., Ltd., sub-pree L-325) (10) parts by weight, 49 200831236 矽The surfactant (manufactured by Toray Dow Corning Co., Ltd., SH-192) was damaged by 3 weights and adjusted to 80 C, and then degassed under reduced pressure. Then, the mixture was vigorously stirred at a rotation number of 900 rpm for about 4 minutes using a biaxial mixer. Air bubbles were taken in the container. In addition, the addition was pre-melted to 12 〇. 4,4, 亚 双 5 5 (〇 笨 笨 )) (manufactured by Iorihara Chemical Co., Ltd., Kuantan) 26·2 The mixture was stirred for about 7 sec to prepare a bubble-dispersed urethane composition. The mixing temperature was adjusted to 80. (: Isocyanate-terminated prepolymer (manufactured by Japan Polyurethane Co., Ltd.) , C—2612) 70 parts by weight, 9 parts by weight of trimethylolpropane hydride and a weight fraction of polytetramethylene ether glycol having a number average molecular weight of 650, and defoaming to prepare a light-transmitting domain forming material. The light-transmitting field forms a material that flows into the long mold (internal width 8 〇 cm, internal The temperature is 52 〇cm, the internal height is 30 mm), and it is placed in an oven at the time when the fluidity of the material disappears, and is cured at 100 to 105 ° C for 12 hours, and at the same time, a 15 foam-free sheet is obtained. Secondly, it is used. The polishing machine (manufactured by Amitoc) performs the surface polishing treatment of the non-hair/package sheet until the thickness O gmni is formed, and the non-foamed sheet having the thickness precision adjusted is formed. Further, the cutter is cut by the cutter. Non-foamed sheet' and made most long-light transmission areas (length 520cm, width i0mm, thickness 〇.6mm). 20 Tielong (registered trademark) long separator (length 520cm, width 10mm, thickness 〇.5mm) Arranged in the center of the width direction of the long mold (internal width 80cm, inner length 520cm, inner height 30mm), and fixed by double-sided tape, and the long light transmission area is disposed on the partition, and by double 50 200831236 Further, the bubble-dispersed urethane composition is discharged from a long mold which is not provided with the long separator and the long light-transmitting field, and is left to stand for about 10 minutes, and then the long mold is placed. Put the temperature adjustment to 80~ 85. The bubble-dispersed amino phthalate composition is hardened in the supply box for 12 hours to form a long-grinding field, and after 5, the long mold is released and the long-grinding field is peeled off by Teflon (registered trademark). Long separator and double-sided tape. Secondly, the surface of the long grinding field was polished by a polishing machine (manufactured by Amitoc) to adjust the thickness to _ 1.1 mm, and a groove processing machine (Dongbang Steel Machinery Co., Ltd.) was used. (manufacturing), X-groove processing is performed on the surface of the long-grinding field, and then a double-sided tape 10 (manufactured by Sekisui Chemical Co., Ltd., #5782W) is pasted on the surface opposite to the groove processing surface by a laminator . Further, the above-mentioned double-sided tape corresponding to the position in the long light-transmitting field was cut by a *NT cutter, and a transparent support film (manufactured by Toyobo Co., Ltd., E5001, PET film, thickness 75 μηι) was bonded using a laminator. A long grinding burr was produced on the double-sided tape described above. 15 Example 2: Isocyanate-terminated prepolymer (manufactured by Sigma Polyurethane Co., Ltd., C-2612) having a mixing temperature adjusted to 80 ° C, 70 parts by weight, trimethylolpropane, 9 parts by weight, and amount The polytetramethylene ether glycol having an average molecular weight of 650 was used in an amount of 21 parts by weight, and defoaming was carried out to prepare a material for forming a light-transmitting region. The light-transmitting collar 2 〇 domain forming material is poured into a long mold (internal width 80 cm, inner length 520 cm, internal length 30 mm), and placed in an oven at a time when the fluidity of the material disappears, and is 100 to 105^ Curing was carried out after 12 hours while obtaining a non-foamed sheet. Next, the non-hair/pack sheet surface polishing treatment was carried out using a polishing machine (manufactured by Amitoc) until a thickness of 1.1 mm was formed, and a non-foamed sheet having a thickness precision adjusted in 51 200831236 was prepared. Further, a groove processing machine (manufactured by Tecno Corporation) was used to form a groove having a groove width of 6 mm, a groove length of 520 cm, a groove pitch of 10 mm, and a groove depth of 0.5 mm in the entire non-foamed sheet, and then along the center of the convex portion. A large concave light-transmissive field (length 520 cm, width l〇mm, thickness 1.1 mm) having a concave portion (width: 6 mm, depth: 5 〇.5 mm) is produced by cutting, and the long light-transmitting field is disposed in the long mold (internal width) A center of the width direction of 8 〇cm, an inner length of 520 cm, and an inner height of 30 mm), and a concave portion was formed on the lower side, and fixed by a double-sided tape. 10 and 'dissolving the bubble-dispersed urethane composition on the long mold not disposed in the long light-transmitting field and standing for about 1 minute, and then placing the long mold in a temperature adjustment of 80 to 85° The bubble-dispersed amine phthalate composition was hardened in an oven of C for 12 hours to form a long-grinding field, and then the long mold was released to peel off the double-sided tape from the long-grinding field. Next, the surface of the long-grinding field was polished by a polishing machine (manufactured by A 15 Mitex Co., Ltd.) to adjust the thickness to L1mm, and a groove addition machine (manufactured by Toho Steel Co., Ltd.) was used in the field of long grinding. The surface was subjected to grooving, and then a double-sided tape (manufactured by Sekisui Chemical Co., Ltd., #5782W) was adhered to the surface on the opposite side of the long-ground area from the groove-processed surface using a laminator. In addition, the double-sided tape which is corresponding to the position of the concave portion is cut by a *NT cutter, and a transparent support film (manufactured by Toyobo Co., Ltd., E5〇〇1, pET film, thickness 75 μm) is used. A long polishing pad is formed by bonding to the above double-sided tape. Example 3 (Adjustment of bubble-dispersed urethane composition by mechanical foaming method 52, 200831236) Mixed isocyanate terminal prepolymer (manufactured by Youli Company, sub-Puri L-325) 100 parts by weight, 矽It is a mixture of 3 parts by weight of a surfactant (made by Toray Dow Corning Co., Ltd., SF2938F) and a temperature of 80 ° C, and 4,4'-methylene bis(indole-chloroaniline) which has been melted to 120 ° C. (manufactured by Ihara Chemical Co., Ltd., Iharahara A) 2 6 · 2 parts by weight is mixed in a mixing chamber before discharge, and air is dispersed in the mixture by mechanical stirring to prepare a bubble-dispersed amine group. Acidate composition. The long light-transmitting field 10 produced in the first embodiment is bonded to the long-term separator of the Teflon (registered trademark) by a double-sided tape, and the double-sided tape is bonded to one side of the separator to obtain a laminate. member. A surface material (thickness: 50 μm, width: 100 cm) made of polyethylene terephthalate (PET) is supplied, and the laminated member is continuously bonded to the central portion of the surface material, and the long separator is continuously disposed in a laminated state. The bubble-dispersed amine phthalate composition is continuously discharged from the mixing head on the face material to which the laminated member is not disposed, and then the surface of the long light-transmitting collar 15 is not disposed. Further, the bubble-dispersed urethane composition was covered with another face material (thickness: 5 μμm, width: 1 cm) composed of PET, and the thickness was uniformly adjusted using a roll, and then heated to 80 by heating. The composition was hardened at ~85 ° C, and a long-grinding field composed of a polyaminomethane 20 ester foam was produced, and then the long-grinding field was cut at a length of 520 cm, and the face material was long. The separator and the double-sided tape were peeled off, and cured at 8 ° C for 6 hours to obtain a long abrasive sheet composed of a long-grinding field and a long-light-transmitting field. Next, the surface of the long-grinding field was polished by a polishing machine (manufactured by Amitoc) to adjust the thickness to a thickness of 53 200831236 5 • 10 to 1.1 mm, and a groove processing machine (manufactured by Toho Steel Co., Ltd.) was used. X-groove processing was performed on the surface of the long-grinding field, and then a double-sided tape (manufactured by Sekisui Chemical Co., Ltd., #57 82W) was adhered to the surface on the side opposite to the groove processing surface by a laminator. Further, the above-mentioned double-sided tape corresponding to the position in the long light-transmitting field was cut by an NT cutter, and a transparent support film (manufactured by Toyobo Co., Ltd., E5001, PET film, thickness: 75 μm) was bonded using a laminator. A long polishing pad was formed on the double-sided tape described above. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an example of a polishing apparatus used in CMP polishing. Fig. 2 is a schematic view showing an example of a cross section of the long polishing pad of the first invention. Fig. 3 is a view showing an example of a resin sheet in which a plurality of grooves are formed at predetermined intervals. 15 Fig. 4 is a schematic view showing an example of a cross section when the resin sheet is cut in the width direction. Fig. 5 is a schematic view showing an example of a cross section of the long polishing pad of the second invention. Fig. 6 is a view showing an example of a manufacturing procedure of the long polishing pad of the second invention. Fig. 7 is a view showing an example of a structure of a mold frame for forming a light-transmitting region. Fig. 8 is a view showing an example of a section of the long polishing pad of the third invention. Fig. 0 54 200831236 Fig. 9 is a schematic view showing an example of the section of the long grinding crucible of the third invention. Fig. 10 is a view showing an example of a resin sheet in which a plurality of four portions are formed at predetermined intervals. 5 The nth figure shows a schematic view of an example of cutting the resin sheet in the width direction. Fig. 12 is a view showing the manufacturing procedure of the long polishing pad of the third invention.
第13圖係顯示第3本發明之長研磨墊之製造程序示意 10 圖。 第14圖係顯示使用腹板型研磨裝置研磨半導體晶圓之 方法之示意圖。 第15圖係顯示使用直線型研磨裝置研磨半導體晶圓之 方法之示意圖。 15 第16圖係顯示使用往復型研磨裝置研磨丰導體晶圓之 方法之不意圖。 【主要元件符號說明】 1.. .研磨墊 2.. .研磨定盤 3···研磨劑(漿液) 4··.被研磨材(半導體晶圓) 5···支持台(磨光頭) 6 ’ 7···旋轉軸 8…長研磨墊(長研磨層) 9…(長)研磨頜威 10(10a,10b)···(長)透光領域 11…透明支持膜 12···貫通孔 13…架部 14··.開口部 15 ’ 29···樹脂片 55Fig. 13 is a view showing the manufacturing procedure of the long polishing pad of the third invention. Figure 14 is a schematic view showing a method of polishing a semiconductor wafer using a web type polishing apparatus. Fig. 15 is a view showing a method of grinding a semiconductor wafer using a linear type polishing apparatus. 15 Fig. 16 is a schematic view showing a method of polishing a conductor wafer using a reciprocating type polishing apparatus. [Explanation of main component symbols] 1.. Polishing pad 2.. Polishing plate 3···Abrasive agent (slurry) 4··. Material to be polished (semiconductor wafer) 5···Support table (buffing head) 6 ' 7···Rotary shaft 8...long polishing pad (long polishing layer) 9...(long) grinding jaw 10 (10a,10b)···(long) light transmission field 11...transparent support film 12··· Through hole 13...frame portion 14·.. opening portion 15 '29···resin sheet 55
200831236 16"·溝 17…肩部 18.. .頭部 19,31…切斷位置 20.. .接著層 21a...供給輥 21b...回收輥 22,35...輥子 23.. .氣泡分散胺基曱酸酯組成物 24…長模 y 25.. .透光領域形成用模框 26.. .注入孔 27.. .注入壁 28.. .透光領域形成材料 30.. .凹部 32.. .混合頭 33··.面材 34.. .輸送機 36.. .空間部 37···雙面膠帶(接著層) 56200831236 16"·Ditch 17...shoulder 18..head 19,31...cutting position 20..subsequent layer 21a...feeding roller 21b...recycling roller 22,35...roller 23.. Bubble-dispersed amino phthalate composition 24...long mold y 25.. Light-transmissive field forming mold frame 26.. injection hole 27.. injection wall 28.. light-transmitting field forming material 30.. .Concave 32.. Mixing head 33··. Face material 34.. Conveyor 36.. Space part 37···Double-sided tape (adhesive layer) 56
Claims (1)
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JP2006284048A JP5146927B2 (en) | 2006-10-18 | 2006-10-18 | Manufacturing method of long polishing pad |
JP2006286462A JP2008100331A (en) | 2006-10-20 | 2006-10-20 | Method for manufacturing long polishing pad |
JP2006286457A JP4869017B2 (en) | 2006-10-20 | 2006-10-20 | Manufacturing method of long polishing pad |
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TW200831236A true TW200831236A (en) | 2008-08-01 |
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TWI494191B (en) * | 2009-04-23 | 2015-08-01 | Applied Materials Inc | Treatment of polishing pad window |
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CN101966697B (en) | 2006-04-19 | 2015-04-22 | 东洋橡胶工业株式会社 | Manufacturing method of polishing pad |
JP4943233B2 (en) * | 2007-05-31 | 2012-05-30 | 東洋ゴム工業株式会社 | Polishing pad manufacturing method |
US8961266B2 (en) | 2013-03-15 | 2015-02-24 | Applied Materials, Inc. | Polishing pad with secondary window seal |
CN112157857A (en) * | 2020-08-06 | 2021-01-01 | 河南平高电气股份有限公司 | Mold closing device and mold closing method for three-pillar insulator mold |
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JPH07178739A (en) * | 1993-12-24 | 1995-07-18 | Sekisui Chem Co Ltd | Device and method for continuous production of shaped body |
JP2003133270A (en) * | 2001-10-26 | 2003-05-09 | Jsr Corp | Window material for chemical mechanical polishing and polishing pad |
JP2004327974A (en) * | 2003-04-09 | 2004-11-18 | Jsr Corp | Polishing pad, its manufacturing method and die, and polishing method of semiconductor wafer |
JP2004343090A (en) * | 2003-04-22 | 2004-12-02 | Jsr Corp | Polishing pad and method for polishing semiconductor wafer |
JP4859109B2 (en) * | 2006-03-27 | 2012-01-25 | 東洋ゴム工業株式会社 | Polishing pad manufacturing method |
JP2007260827A (en) * | 2006-03-28 | 2007-10-11 | Toyo Tire & Rubber Co Ltd | Method of manufacturing polishing pad |
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TWI494191B (en) * | 2009-04-23 | 2015-08-01 | Applied Materials Inc | Treatment of polishing pad window |
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