200829722 九、發明說明： 【發明所屬之技術領域】 ,本發明係關於-種導光板模仁製作方法，尤指一種可 :作出-種特徵之斷面呈梯形狀且特徵深度可準確控制的 導光板模仁’&既有技術所製作之模仁易產生尖端斷裂、 磨耗的情形之控制非等向性㈣之㈣深度的導光板 製作方法。 、一 【先前技術】 液晶顯示器係為近來蓬勃發展的一種平面顯示裝置， 其可分為被動矩陣驅動式液晶顯示器（包含TN_LCD、 STN-LCD )及主動矩陣驅動式液晶顯示器(包含、 tfT-LCD)，而其中，又以tft_lcd(薄膜電晶體液晶顯 不器）為技術發展趨勢主力。 TFT LCD並非自發光性顯示裝置，其光源係來自其内 所設計的背光模組，一般而言，肖背光模組主要係由稜鏡 二三導光板、外部發光源（包括發光二極體、冷陰極射線 管等）、擴散膜、反射膜及外框架等零件組裝而成，其中 又以導光板為最重要的零組件之一’目為該導光板係可將 外部發光源的光線均勻地引導到至整個發光面，以提供均 勻的平面光源。 導光板係為具一定折射率（約為15)的材質所製， 其表面遍佈形成有光擴散結構，該光擴散結構係可為四角 •隹狀、圓柱狀或圓點狀的擴散點，亦可為凹陷的長形溝槽； 其中，該擴散點的作用在於散射導光板板體内的入射光， 5 200829722 而長形溝槽則可破壞前述入射光位於導光板板體内的全反 射，使該入射光能夠從導光板的平面導出。 而前述導光板表面的長形溝槽的成形方式，乃藉由一 具v形凸體或凹槽的模仁，配合以射出成形方法，即以用 於製作導光板的塑料充填入模仁内來達到成形；而就目前 而吕，該導光板模仁的製作方法，係可採用高速鑽石刀， 直接在模仁基材上銳削出複數呈v形的溝槽，因而相對於 ::表面形成複數V形凸體或凹槽來達到成形，但刀具的磨 貝直接影響到V-CUT的製作精度，且機台與加工成本高， =溝槽深度與角度’需要特定的鑽石刀具，最小溝寬 人:二5(_，但加工技術困難’不易用在不同溝寬的組 合投計中。 =應用類微光刻電鑄模造（UGA]ike)的方式，將網點 面圖樣利用類似半導体之光罩曝光顯影方 =上，或者是再加熱至玻璃轉換溫度，使光阻表面敎 滑之半球狀或半圓柱結構，再濺鑛或蒸鍍—層金 乍為電鑄起始層，以電鑄方式在光阻圖案上 二板取代〜r)。以微影電鑄製 取二= 尺圖:表面光滑具光學鏡面的特性，可以光罩方式 :::分:在相當適合配合導光板設計進行輝度= 形溝槽與稜鏡面，阻網點的幾受： =性、光阻表面張力、微影厚度與回熱條件等影塑土材 易預測，因此在配合光學模擬軟體進行圖案分佈設^ 200829722 誤差大。 若以單晶㈣#向性濕㈣技術«作電#的中介 層，以梦基材非等向性姓刻製作v形溝槽，則可利用石夕晶 圓[ill]面#刻停止的特性，特徵大小由微影的精度決/ 可達微m且角度㈣準確’表面㈣度也可達到太 米等級。可製作高重複性與高精度的精密v形溝槽，該； 法由於加工成本低，相當具有應用潛力 '然而，前述模仁 實際製作及運用上仍然有—^的問題存在：因為模仁上的 V形凸體的尖端為次微米尺寸等級，&一般模仁製作完成 後’部份V形凸體尖端往往會有斷裂、脫落的情形產生， 經瞭解發現-部份原因仙為在模仁製作的電鑄势程中， 由於電鑄的沈積過程尖端不易堆積，《因模仁尖端的強产 不足’以致應用在在模具成形時，尖端容易變形*磨耗X 而在元件成形製作過程中，也容易造成塑料充填不完全· 是以，如此問題均會使得導光板的微特徵在成形後，產生 缺陷’無法完全反應原先的特徵幾何設計，或造成脫模問 題，而影響到該導光板的導光 兀苻性，而所製作的成品特徵 尖端也易受損壞。 【發明内容】 本發明之目的係在於提供一护制 ” ^ A… 、匕制非專向性蝕刻之蝕刻 殊度的導光板模仁製作方法，其掣 括撞L α j衣作出一種導光板模 仁’有效解決現有技術模仁實際製作及運用上所存在的缺 失。 為達前述目的，本發明之控制非等向性钱刻之姓刻深 200829722 度的v光板模仁製作方法係 蝕刻深产蚊卜妯4十如 夕日日圓非等向性濕蝕刻與 虫J木度終止技術來製作導光板 蜻妳八Μ々 、^一电鍀用基座，以供接 n孟屬薄膜沈積及電鑄製 /、爰 V先板杈仁電鑄用基座 、中该 、、隹# 表作方法包括有以下步驟： 準備一單晶矽基材； 於矽基材的上表面形成一 深声玖μ m j /衣度終止層’且該蝕刻 又、·、止層表面可形成—單晶妙特徵層，· 於該特徵層上表面形成一屏幕層； 再於5亥屏幕層表面覆笔 ^ 術 復现先阻層，並運用曝 對該光阻層予以圖案化，以形成圖案化光阻；支 刻 =圖案化光阻為㈣I幕’對下方屏幕層進行钱 將圖案化絲的目轉移至該 案化屏幕層； /、形成一圖 f夕除圖案化光阻，僅保留 上. 保遠忒圖案化屏幕層於該特徵層 以圖案化屏幕層為兹刻罩幕，對其下方的特徵層進行 寻向性濕蝕刻’令特徵層被蝕刻下凹處的側邊 ::⑴]斜面向下延伸，直到特徵層下方之钮刻深度終= 的錢表面外露而停止，與特徵層的兩相鄰❹】面呈―才曰, =斷面1由㈣屏幕層的圖案設計，完成特徵可為梯: 長溝或截頂角錐之圖案化特徵層； y 移除屏幕層案化的特徵層纟面經沈積如錢 蒸鍍一層金屬薄膜後，即為供電鑄用之基座。 又5 由上可知，本發明藉由該電鑄用基座，即能在經電鑄 200829722 衣私後，成形一具有斷面呈連續梯形凸體的導光板模仁， 疋以本發明藉由石夕晶圓非等向性濕蝕刻與蝕刻深度終止 技術，谷易成形一具有斷面呈連續梯形凸體結構特徵的電 “用基座，令後製出的導光板模仁具有相同的結構特徵， 而此杈仁所加工生產的模仁將不會有一尖端結構，因此 本發明同樣配合半導體製程所製出的模仁，在未來導光板 成升/日寸^忐有效避免尖端斷裂、脫落的情形產生，且便 方、脫板確保導光板品f，且成品尖端在運送、組裝也 損壞。 ⑺又上述達到控制非等向性蝕刻之蝕刻深度的方式，除 於單晶石夕基材上形成一兹刻深度終止層外，更可在不增加 半導體製程步驟的方-V、Β Θ 一， , 工/、有控制蝕刻深度的功效前提 下’省略此一蝕刻深度終止屛 日^ 不又、、止層的成形，意即，直接於該單 晶石夕基材上形成一盘兮置θ "" 日日夕基材呈相反載子材料特性之 一单晶石夕層，此一；置曰功既Β 1 層早日日矽層即為特徵層；如此，即可於 特徵層進行非等向性蝕刻前， ' 桩5 —、、，A # ^ °"早日日矽基材與特徵層連 4d, ^ a 马一極體，故單晶矽基材盥 特徵層之間的接面會產生柯” 7田f虫刻液到達此一拄 面時，會破壞該接面結構而產生 王乳化層’而令蝕刻液停止， 如此該氧化層即能作為控_刻深度停止之用。 【實施方式] 請參看第iA至1J圖所示，本發明控制非等向性㈣ 之钮刻深度的導光板模仁製作：刻 包括有·· J罕又I μ Μ例，其步驟 9 200829722 於一矽基材（1 ο )的表面形成一蝕刻深度終止層（工 1 )’該蝕刻深度終止I (丄丄）可能是高濃度摻雜層、 二氧化矽、氮化矽、富矽氮化矽、聚亞醯胺，甚至是金屬。 可利用熱擴散、離子佈植、熱氧化、化學氣相沉積或物理 氣相沉積的方式，來製作蝕刻深度終止層（丄丄）·而該 ;刻深，層（11)表面又形成-配合微特徵微幾何 :::特疋厚度的特徵層（1 2 )，該特徵層（1 2 )材 枓係為單晶矽； 於特徵層（1 2 )矣® $ ^ , 可以化風q )表面上再形成一屏幕層（！ 3 )， 化于乳相沉積方法（C VD )於特彳呀居 積一第几A # J於符斂層（1 2 )表面沉 、虱化矽薄膜或二氧化矽薄膜，、片 —(Oxidation furnace )方法對該特徵‘“溫乳化爐 氣化作用’而形成二氧切薄膜，表面進行 的材質可為二氧切或氮切;、…屏幕層（13) 於屏幕層（1 3 )表面覆 先顯影技術，令光阻（14)轉換A(l4)，並運用曝 4，）； ）轉換為—圖案化光阻（1200829722 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for fabricating a light guide plate mold core, and more particularly to a guide for making a profile with a trapezoidal shape and an accurate depth of feature depth. The light plate mold core '& The mold made by the prior art is easy to produce the tip breakage, the wear condition is controlled by the isotropic (4) (4) depth of the light guide plate manufacturing method. [Previous Technology] Liquid crystal display is a kind of flat display device which has been flourishing recently. It can be divided into passive matrix driven liquid crystal display (including TN_LCD, STN-LCD) and active matrix driven liquid crystal display (including, tfT-LCD). ), and among them, tft_lcd (thin film transistor liquid crystal display) is the main trend of technology development. The TFT LCD is not a self-luminous display device, and the light source is from a backlight module designed therein. Generally, the backlight module is mainly composed of a second light guide plate and an external light source (including a light emitting diode, The components such as the cold cathode ray tube, the diffusion film, the reflective film, and the outer frame are assembled, and the light guide plate is one of the most important components. The light guide plate can uniformly light the external light source. Guide to the entire illuminated surface to provide a uniform planar light source. The light guide plate is made of a material having a certain refractive index (about 15), and a light diffusing structure is formed on the surface thereof, and the light diffusing structure can be a four-corner, a dome-shaped, a cylindrical or a dot-shaped diffusion point. The concave groove can be a concave groove; wherein the diffusion point acts to scatter the incident light in the light guide plate body, 5 200829722, and the elongated groove can destroy the total reflection of the incident light in the light guide plate body. The incident light can be led out from the plane of the light guide plate. The long groove of the surface of the light guide plate is formed by a mold having a v-shaped convex body or a groove, and is combined with an injection molding method, that is, a plastic for forming a light guide plate is filled into the mold core. To achieve the forming; and now, Lu, the light guide plate mold is made by using a high-speed diamond knife to sharply cut a plurality of v-shaped grooves on the base of the mold, thus relative to:: surface Forming a complex V-shaped protrusion or groove to achieve the forming, but the grinding of the tool directly affects the production accuracy of the V-CUT, and the machine and processing cost is high, = the groove depth and angle 'requires a specific diamond tool, the minimum Ditch wide people: two 5 (_, but the processing technology is difficult 'not easy to use in the combination of different groove widths. = Application of microlithography electroforming (UGA) ike), the dot pattern is similar to semiconductors The reticle is exposed to the developer side = upper, or reheated to the glass transition temperature, so that the surface of the photoresist is smoothed by a hemispherical or semi-cylindrical structure, and then splashed or evaporated - the layer of gold is the electroforming starting layer, The electroforming method replaces the second plate on the photoresist pattern ~r). Take lithography electroforming to take two = ruler: smooth surface with optical mirror characteristics, can be reticle mode::: points: in a suitable fit with the light guide plate design for brightness = shaped groove and 稜鏡 face, a few points Accepted by: = sex, photoresist surface tension, lithography thickness and regenerative conditions, etc., it is easy to predict, so the pattern distribution with the optical simulation software is high. If you use the interposer of single crystal (four) #向性湿(四)技术«作电#, and make the v-shaped groove by the non-isotropic surname of the dream substrate, you can use the Shixi wafer [ill] surface to stop. Characteristics, feature size by the precision of lithography / up to micro m and angle (four) accurate 'surface (four) degrees can also reach the level of the meter. It can produce high-repetition and high-precision precision v-grooves. This method has considerable application potential due to low processing cost. However, there are still problems in the actual production and operation of the above-mentioned molds: The tip of the V-shaped convex body is of the sub-micron size grade. & After the general mold core is finished, the 'part of the V-shaped convex body tip tends to be broken and peeled off. It is found that some of the reasons are in the mold. In the electroforming potential of Ren's production, the tip of the electroforming process is not easy to accumulate. "Because of the strong production of the tip of the mold", the tip is easily deformed when the mold is formed. * The wear X is in the process of forming the component. It is also easy to cause the plastic filling to be incomplete. Therefore, the problem will cause the micro-features of the light guide plate to be defective after forming. The original feature geometric design cannot be completely reflected, or the demoulding problem is caused, and the light guide plate is affected. The light guiding properties of the finished product are also susceptible to damage. SUMMARY OF THE INVENTION The object of the present invention is to provide a method for manufacturing a light guide plate mold core which is protected by a non-specific etching etch, and which comprises a light guide plate. Mould's effectively solves the shortcomings in the actual production and application of the prior art mold. In order to achieve the above purpose, the method for controlling the anisotropy of the invention is to etch the depth of the v-plate mold in the depth of 200829722 degrees.产 妯 妯 妯 妯 妯 妯 妯 妯 妯 妯 妯 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非 非The casting method, the 爰V first plate, the susceptor, the middle, the 隹# table method includes the following steps: preparing a single crystal ruthenium substrate; forming a deep sound 矽 on the upper surface of the ruthenium substrate μ mj / clothing termination layer 'and the etching, the surface of the stop layer can form a single crystal layer, forming a screen layer on the upper surface of the feature layer; Reproducing the first resist layer and patterning the photoresist layer by exposure to Patterned photoresist; stencil = patterned photoresist is (four) I screen 'to the lower screen layer to transfer the shadow of the patterned silk to the screen layer; /, forming a picture f eve except the patterned photoresist, Only the upper layer is preserved. The pattern layer is patterned on the feature layer to pattern the screen layer as a mask, and the underlying feature layer is subjected to a directional wet etching to enable the feature layer to be etched to the side of the recess. ::(1)] The slanting face extends downward until the surface of the button below the feature layer is finished, and the surface of the money is stopped, and the two adjacent 特征 faces of the feature layer are “― 曰, = Section 1 by (4) the screen layer The pattern design, the finished feature can be a ladder: a patterned feature layer of a long groove or a truncated pyramid; y removes the layered feature layer of the screen layer, and deposits a metal film after deposition, such as money, which is the basis of power supply casting. Further, it can be seen from the above that the present invention can form a light guide plate mold having a continuous trapezoidal shape with a cross section by electroforming a base of electroforming 200829722. Through the non-isotropic wet etching and etch depth termination technology of Shixi wafer, Gu Yicheng An electric "base" having a continuous trapezoidal convex structure, the post-made light guide plate mold has the same structural features, and the mold produced by the coix seed will not have a pointed structure. Therefore, the present invention also cooperates with the mold core produced by the semiconductor process, and in the future, the light guide plate is formed in a rising/decreasing manner, thereby effectively preventing the tip from being broken and falling off, and the sheet is removed, the light guide plate is ensured, and the finished product tip is obtained. It is also damaged during transportation and assembly. (7) In addition to the above-mentioned manner of controlling the etching depth of the anisotropic etching, in addition to forming a deep-cut layer on the single crystal substrate, the square-V, Β Θ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , θ "" The substrate of the day and night is one of the characteristics of the opposite carrier material, this one; the first layer of the layer is the characteristic layer; therefore, it can be performed on the feature layer Before the anisotropic etching, 'pile 5 —, , , A # ^ °" early day, the base material and the feature layer are connected 4d, ^ a horse one pole, so the single crystal 矽 substrate 盥 between the feature layers When the junction is made, the "King" insect solution will break the junction structure and create a king emulsion layer, and the etching solution will stop, so that the oxide layer can be used as a control stop. [Embodiment] Please refer to the figures iA to 1J, the invention controls the anisotropy (four) button depth The light guide plate mold is made: the engraving includes the J · Han and I μ example, and the step 9 200829722 forms an etch depth stop layer on the surface of the substrate (1 ο ) (the etching depth is terminated) I (丄丄) may be a high concentration doping layer, cerium oxide, cerium nitride, cerium-rich cerium nitride, polytheneamine, or even metal. Thermal diffusion, ion implantation, thermal oxidation, chemical gas may be utilized. Phase deposition or physical vapor deposition to form an etch depth stop layer (丄丄); and; depth, layer (11) surface is formed again - with micro-features micro-geometry:: feature layer of special thickness ( 1 2), the feature layer (1 2 ) is a single crystal germanium; on the feature layer (1 2 )矣® $ ^ , a screen layer (! 3 ) can be formed on the surface of the wind q), The emulsion phase deposition method (C VD ) is a special case of A. A. J J Fu Fu layer (1 2 ) surface sinking, bismuth telluride film or ruthenium dioxide film, and sheet-(Oxidation furnace) method The feature 'the warming furnace gasification' forms a dioxodenic film, and the surface material can be dioxodere or nitrogen cut; (13) the screen layer (13) overlying the first surface of the developing technology, the photoresist (14) into A (l4), and exposed using 4,);) into - patterned photoresist (1
以该圖案化光阻（ X 的钱刻罩幕，對屏幕層（1 3)進1為下方屏幕層（13) 案化光阻（1 4 ,彳 行蝕刻，如此即能將圖 发π上 ）的圖案轉移至該屝莫屏/ 其形成—圖案化屏幕層（13,）；屏幕層（13) ’令 去除圖案化光阻（χ 4，）； 岁ij a等向丨生濕蝕刻之特性來對特®With the patterned photoresist (X's money mask, the screen layer (1 3) enters 1 as the lower screen layer (13). The photoresist is cured (1 4, etched, so that the image can be π The pattern is transferred to the screen / it is formed - patterned screen layer (13,); the screen layer (13) 'to remove the patterned photoresist (χ 4,); aged ij a, etc. Features to the special ®
Tetra-methy 1_ 銨 …钱刻液包含四甲基氣氧：層（12)進行姓 200829722 ammonium hydroxide ; TMAH )、氫氧化鉀（卩咖以· hydroxide，KOH )、乙二胺鄰苯二酚（ pyr〇cat〇ch〇1; EDP)，蝕刻液之選擇須配合屏幕層（丄3 ) 與姓刻冰度終止層（i )之材料，例如TMAH姓刻石夕， 則可選擇氧化石夕（si02)或氮化石夕（sixNy)作為屏幕層（丄3) 或钱刻深度終止層（11)，而KQH_則建議採用氮 化石夕作為屏幕層（13)rn罙度終止層（11)，令 姓刻自然停止在n i u晶格面，且钱刻處側邊形成一斜面， :到姓刻深度終…η)露出；是以，特徵層即轉化 斷面呈梯形狀的圖案化特徵層（1 2,），其兩側斜 夾角在{100}矽基材（i 0 )約為7〇5、在矽基 材（1 0 )約為 109.5。； 去除圖案化屏幕層（13，）； 於圖案化特徵層f Ί 9， X . ^ Q 1 2 )表面以濺鍍或蒸鍍方法， 二习形成一覆蓋於圖案化 Λ ^ A ^ 以作為…“ ）的金屬薄膜， 马電起始層（15) · 置入電解槽中翻鑄， 沉積 ~ 起始層（1 5 )表面逐漸 或发他^ 屬，如Ni(録）、Ni-co(鎳始合金） ^他合金而形成模體（；[6); ^濕蝕刻技術去除握Μ 圖幸 无除杈體（1 β )之外的矽基材（；L 〇 )、 模體（ ^ )及蝕刻深度終止層（]_ ；L )，令 心所示)6:得以脫離成形為模仁（17)(請參看第1 °月參看第2A $ 2 J圖所示，本發明控制非等向性蝕刻 11 200829722 之敍刻深度的導光板模仁製作方法之另一較Tetra-methy 1_ ammonium... money engraving contains tetramethyl oxy-oxygen: layer (12) carries the name 200829722 ammonium hydroxide; TMAH), potassium hydroxide (卩 以 、 hydroxide, KOH), ethylenediamine catechol ( Pyr〇cat〇ch〇1; EDP), the choice of etchant must match the screen layer (丄3) and the material of the last name of the ice stop layer (i), for example, TMAH surnamed Shi Xi, then you can choose Oxide Xi ( Si02) or nitrite (sixNy) as the screen layer (丄3) or the money engraved depth stop layer (11), while KQH_ suggests the use of nitrite as the screen layer (13) rn 终止 degree termination layer (11), The surname is naturally stopped at the niu lattice plane, and a bevel is formed on the side of the money, and the depth of the surname is η) exposed; that is, the characteristic layer is a patterned feature layer with a ladder-shaped transformation section ( 1 2,), the diagonal angle between the two sides is {100}, the substrate (i 0 ) is about 7〇5, and the substrate (10) is about 109.5. Removing the patterned screen layer (13,); on the patterned feature layer f Ί 9, X . ^ Q 1 2 ) the surface is sputtered or evaporated, and the second is formed by patterning Λ ^ A ^ ..." metal film, horse electricity starting layer (15) · placed in the electrolytic cell to cast, deposition ~ starting layer (15) surface gradually or genus, such as Ni (record), Ni-co (nickel alloy) ^ alloy to form the phantom (; [6); ^ wet etching technology to remove the grip Μ Figure fortunately no 杈 substrate (1 β) other than the 矽 substrate (; L 〇), phantom ( ^ ) and the etched depth stop layer (] _ ; L ), the heart shown) 6: can be formed into a mold (17) (see the 1 ° month see the 2A $ 2 J diagram, the invention controls Another comparison of the method of making a light guide plate mold with a non-isotropic etching 11 200829722
步驟包括有： $ U σ 土材（2〇)上用磊晶方式成長一層與矽基材 -相反載子摻雜材料之單晶矽作為特徵層（2丄”例如： 於一 Ρ型之石夕基材上蟲晶成長一層Ν型之單晶石夕’或於Ν 型之珍基材上羞Β 士、且 風PNi^日日成長—層Ρ型之單晶石夕，然後藉由電化 :接面敍刻終止（electrochemicalp_Njunctione㈣ 秒基材（20)與特徵層（21)… )達成蝕刻深度終止；亦 0)與-不與蝕刻液反/夕基材（2 〇)則透過此電極連接；V p型發基材（2 、極，7 N型磊晶特徵層（2 1 ) 斤在之區域變成為正極， 低陳 ^成泛個大型的二極體承受逆向 2…石夕基材（2〇)與特徵層⑴）之P_N接面（2 2 )之間產生壓_，以 〇)與特徵層（21)0ΡΝ1進仃到切基材（2 (⑴與特剛川…：⑴””該石夕基材 勺p N接面（2 2 )合姑石古土韦 而產生氧化層來達龍刻停止之目的. 日被破壞， 於特徵層（2i)表面上再形 可以化學氣相沉積方法（CVD ) / ^ 23)， 積-氮化矽薄膜戋-氧仆々"寺徵層（2 1 )表面沉 y辱朕次_虱化矽薄 (Option furnace)彳法對者直接以南溫氧化爐 孔化作用’而形成二氧化秒薄 =)表面心 的材質可為二氧切或氮化石夕.…屏幕層（”） 並運用曝 於屏幕層⑴）表面覆蓋光随（24) 12 200829722 光顯影技術’令光阻（24 4，）； 巧圖案化先阻（2 以該圖案化光阻（24’）可作 的蝕刻罩暮，斜p # 方屏幕層（2 3 ) d皁秦，對屏幕層（2 3 )進行蝕 案化光阻（9 /1， 、 A 如此即能將圖 Γ 4 )的圖案轉移至該屏幕層…… /、形成一圖案化屏幕層（2 3^ 去除圖案化光阻（24，); 以非等向性濕蝕刻之特性來對特徵芦 刻，兮名占方，丨老* 曰〔2 1 )進行钱 a蝕刻處側邊形成一斜面， 美姑Γ ο η、 褙铖刻冰度終止而令矽 (2 ◦)與特徵層（2 1 )的Ρ-Ν接面（ 霞屮· Β 、， 牧®2 2 )逐漸 ^出，疋以，前述特徵層（2 1 ) 狀的图安几好# Ρ轉化為一斷面呈梯形 美材二木、欲層（2 1 )’其兩側斜面爽角在{100}石夕 土材（20)約為70.5。；在⑴〇}石夕基材（2〇)約為⑽5。； 去除圖案化屏幕層（23,); ^案化特徵層（21’）纟面以濺鑛或蒸鑛方法， :成-覆蓋於圖案化特徵層（21，）的金屬薄膜， 乂作為電鑄起始層（2 5 ); 置人電解槽中翻鑄，令電鑄起始I(25)表面逐漸 :貝又厚度的金屬，如Ni (鎳）、Ni-Co (鎳钻合金） 5、其他合金而形成模體（2 6 ); 以濕蝕刻技術去除模體（2 6 )之外的矽基材（2 〇 及圖案化特徵層（2 1，)，令楹M f 9 β、π -杈體（2 6 )得以脫離成 為杈仁（2 7 )(請參看第2K圖所示）。 請參看第三圖所示，前述製成的模仁（17,27)， 200829722 可擺設於一模且广〇 出成m 〃 3 〇)的模穴（3 1 )之中，配合以射 J /即以用於製作導光板的塑料充填入模穴（？ 1 )内，而憑葬装> ^ 、，错者拉仁（1 7,2 7 )的梯形凸體而達到 直：的成形；或可利用熱壓印方式成形，成形後的導光板， 溝==斷面呈一梯形的長溝槽或截頂角•，該長形 彳8 "、角錐同樣能夠破壞光線的全反射，使該導光拓 内的入射光由導氺把从上&, 尤坂 板的平面導出，或設置在導光板出 面’取代稜鏡膜片，改變出光角度，以增加正面出光輝度。 於本發明之控制非等向性蝕刻之蝕刻深度的 導光板模仁製作方法’係於利用碎基電鑄用基座之钱刻特 试’具有高幾何形狀精度、重複性與光滑之表面特性；又 因電鑄的沉積過程中，由原子逐漸堆積形成模仁（ι 口此，、具有良好的轉寫性，可供操作者依照所需而 自由調整模仁（1 7，2 7 )、特徵形狀與分佈等設定條件； :外’其實施所需的設備便宜，可以較低的成本，來製作 N知度之導光板模仁，以利導光板的量產。 【圖式簡單說明】 第圖A〜K係本發明之較佳實施例實施步驟示意圖。 第二圖Α〜κ係本發明之另一較佳實施例實施步驟示意 圖。 第二圖係導光板模仁實施狀態示意圖。 【主要元件符號說明】 (1 0 )矽基材 (1 1 )蝕刻深度終止層 14 200829722 (12) 特徵層 (12’ ）圖案化特徵層 (13) 屏幕層 (13’ ）圖案化屏幕層 (1 4 )光阻 (14’ ）圖案化光阻 (15)電鑄起始層 (1 6 )模體 (1 7 )模仁 (2 0 )矽基材 (21)特徵層 (21’ ）圖案化特徵層 (2 2 ) P-N 接面 (2 3 )屏幕層 (23’ ）圖案化屏幕層 (24’ ）圖案化光阻 (2 5 )電鑄起始層 (2 6 )模體 (2 7 )模仁 (3 0 )模具 (3 1 )模穴 15The steps include: $ U σ soil material (2 〇) on the epitaxial layer to grow a layer of tantalum substrate - the opposite carrier dopant material of the single crystal germanium as a feature layer (2 丄", for example: On the substrate of the eve, the larvae grow a layer of 单晶-shaped single crystal 夕 夕 or on the Ν type of the precious substrate on the substrate, and the wind PNi^ grows day by day - the layered 单晶 single crystal eve, and then by electrolysis : junction termination (electrochemicalp_Njunctione (four) seconds substrate (20) and feature layer (21)...) to achieve etch depth termination; also 0) and - not with the etching solution / 夕 substrate (2 〇) through this electrode connection ; V p-type hair substrate (2, pole, 7 N-type epitaxial feature layer (2 1 ) jin in the area becomes positive, low Chen ^ into a large large diode to withstand reverse 2... Shi Xi substrate (2〇) generates a pressure _ between the P_N junction (2 2 ) of the feature layer (1)), and 特征) and the characteristic layer (21) 0ΡΝ1 into the cutting substrate (2 ((1) and Tegangchuan...:(1) "The stone enamel substrate spoon p N junction (2 2) combined with Gu Shi Gu Tuwei to produce an oxide layer to achieve the purpose of stopping the dragon. The day is destroyed, and the shape can be reshaped on the surface of the characteristic layer (2i). Vapor Deposition Method (CVD) / ^ 23), product-tantalum nitride film 戋-oxygen servant" temple layer (2 1) surface sinking y insults 虱 虱 矽 矽 ( ( ( ( ( Option Option Option Option Option Option Option Option Option Directly to the south temperature oxidation furnace pores 'to form a second oxidation thin =) surface material can be dioxane or nitrite eve .... screen layer (") and exposed to the screen layer (1)) surface coverage light With (24) 12 200829722 light development technology 'resistance of photoresist (24 4,); skillful patterning first resistance (2 with the patterned photoresist (24') can be used as an etching mask, oblique p # side screen layer ( 2 3 ) d soap, the pattern of the screen layer (2 3 ) is etched (9 / 1, , A can transfer the pattern of Figure 4) to the screen layer ... /, forming a pattern Screen layer (2 3^ remove patterned photoresist (24,); feature eclipse with non-isotropic wet etching, 兮名占方, 丨老* 曰[2 1 ) Forming a bevel, the nucleus ο η, the engraving of the ice is terminated, and the Ρ-Ν junction of the 矽 (2 ◦) and the feature layer (2 1 ) (Xia 屮 Β , , 牧 о 2 ^出,疋以,前The characteristic layer (2 1 ) is shown in Figure 2. The Ρ is transformed into a section of trapezoidal material, two woods, and the layer (2 1 ) is slanted at both sides of the {100} Shixi soil (20 ) is about 70.5.; in (1) 〇} Shi Xi substrate (2 〇) is about (10) 5; remove the patterned screen layer (23,); ^ case feature layer (21 ') 纟 face to splash or steam The method comprises: forming a metal film covering the patterned feature layer (21,), and using ruthenium as an electroforming starting layer (25); casting the electrolysis cell to make the surface of the electroforming start I(25) gradually : a shell of a thickness of a metal such as Ni (nickel), Ni-Co (nickel diamond alloy) 5, other alloys to form a mold body (2 6 ); removal of the sulfhydryl group other than the phantom (2 6 ) by wet etching The material (2 〇 and the patterned feature layer (2 1,), allows the 楹M f 9 β, π-杈 body (26) to be detached into the coix seed (27) (see Figure 2K). Referring to the third figure, the above-mentioned mold cores (17, 27), 200829722 can be placed in a mold cavity (3 1 ) which is formed into a mold and is widely formed into m 〃 3 〇). / That is, the plastic used to make the light guide plate is filled into the cavity (? 1), and the trapezoidal convex body of the funeral > ^, the wrong person (1, 2 7 7) is used to achieve the formation of straight: Or can be formed by hot stamping, after forming the light guide plate, the groove == the section has a trapezoidal long groove or truncated angle•, the elongated shape 8 ", the pyramid can also destroy the total reflection of light, The incident light in the light guide is led out from the plane of the upper &, the 坂 plate, or is disposed on the exit surface of the light guide to replace the diaphragm, and the angle of light is changed to increase the brightness of the front surface. The method for fabricating a light guide plate mold for controlling the etching depth of an anisotropic etching of the present invention is based on the use of a base for the electroforming of a base for electroforming, having high geometric accuracy, repeatability and smooth surface characteristics. And due to the deposition process of electroforming, the atoms are gradually piled up to form the mold kernel (this is a good transferability, allowing the operator to freely adjust the mold core according to the needs (1 7, 2 7 ), Setting conditions such as feature shape and distribution; : Externally, the equipment required for its implementation is cheap, and the light guide plate mold of N-degree can be made at a lower cost to facilitate mass production of the light guide plate. [Simple description] Figures A to K are schematic diagrams showing the steps of the preferred embodiment of the present invention. The second diagram is a schematic diagram of the implementation steps of another preferred embodiment of the present invention. The second diagram is a schematic diagram of the implementation state of the light guide plate mold. Main component symbol description] (1 0 ) 矽 substrate (1 1 ) etched depth stop layer 14 200829722 (12) eigen layer (12') patterned feature layer (13) screen layer (13') patterned screen layer (1 4) Photoresist (14') patterned photoresist (15) electroforming Starting layer (1 6 ) phantom (17) mold core (20) 矽 substrate (21) feature layer (21') patterned feature layer (2 2 ) PN junction (2 3 ) screen layer (23 ' ) patterned screen layer (24') patterned photoresist (2 5 ) electroforming starting layer (2 6 ) phantom (2 7 ) mold core (3 0 ) mold (3 1 ) cavity 15