200829133 九、發明說明： •【發明所屬之技術領域】 • 本發明係有關一種提昇電器設備内部溫度之技術 領域，尤指一種可散發出適當之熱量而使電器設備内之 溫度提昇至可工作範圍内，進而使該電器設備能於低溫 環境中運轉之電路板之加熱模組者。 【先前技術】 • 一般電器設備内部控制電路板上的電子元件，其正 常運轉的溫度約在於0°C〜75°C之間，因此在一些溫度 常為零度以下的寒冷地區，欲使電器設備中之電路板上 的各種電子元件能正常的運作，則便須使該電器設備内 部維持在一適當的溫度範圍内。 而早期維持電器設備内部適當溫度方法，主要是以 保溫材料將該電器設備包覆於内，然而電器設備通常具 有非常多的接頭及控制按鍵，因此要將其完全包覆不太 ⑩ 可能實現，所以其維持溫度的效果非常的有限。而目前 則是利用於該電器設備中增設一加熱裝置來改善上述 之問題，如註冊號數M265900號之專利所示，利用該加 熱裝置產生熱量使電器設備内的整體溫度提昇至一定 值或是靠近電路板上的電子元件，以避免電子元件溫度 過低。然而，目前的加熱裝置，如電熱片等，其皆係設 在電路板之外部，因此係會較為佔用電器設備的空間， 進行會使該電蒸設備的體積因此而須設成較大。 200829133 【發明内容】 本I明&土要目的在提供一種可提昇電器設備内 部之溫度，使於低溫環境中電嚣設備内部之電路板上的 電子元件仍可正常運轉之電路板之加熱模組者。、 具體而言，本發明所述電路板之加熱模組，其結構 包括一金屬氧化物半導體場效電晶體、一直流電^' 一電流感測器及一通態電阻控制器，其中該金屬氧化 物半導體場效電晶體具有一散熱片供將該金屬氧化物 半導體場效電晶體通電時所產生之熱量散發至外部， 该直流電源係提供一穩定電壓予該金屬氧化物半導體 場效電晶體，該電流感測器係串接於該金屬氧化物半 導體場效電晶體與直流電源之間5供偵測流入該金屬 氧化物半導體場效電晶體的電流強度，該通態電阻控 制器係並聯於該金屬氧化物半導體場效電晶體與電^ 感測器之間，可依據該電流感測器所偵測之電流強度 調整該金屬氧化物半導體場效電晶體的通態電阻值， 以使該金屬氧化物半導體場效電晶體恆處於將導通而 未導通之臨界狀態，以藉此使該金屬氧化物半導體場 效電晶體持續產生熱量。 如此’便可藉由該加熱模組提昇電器設備内之溫 度’以使於低溫環境中該電器備内電路板上之電子元 =仍可維持正常運轉，而且由於該加熱模組係直接組 裝於該電路板上，因此係較為不佔空間，所以便可使 200829133 該電器設備之體積及重量大幅縮小，而使其符合現今 / 電器設備輕、薄、短、小的趨勢。 【實施方式】 請參閱第--三圖所示，係本發明之第一實施例， 其係指出該加熱模組（1)設於一電路板（2)上，其 中該加熱模組（1 )包括： 一金屬氧化物半導體場效電晶體（1 0 )，英文簡 ⑩稱為 M0SFET ;全名為 METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR，其係具有一散熱片（工 〇 0 )供將該MOSFET ( 1 〇 )通電時所產生之熱量散發 至外部； 一直流電源（1 1 )，係提供一穩定電壓予該 MOSFET (10)； 一電流感測器（1 2 )，係串接於該MOSFET ( 1 Φ 0 )與直流電源之間，供偵測流入該MOSFET ( 1 〇 ) 的電流強度；以及 一通態電阻控制器（1 3 )，即4控制器，其係並 聯於該MOSFET ( 1 〇 )與電流感測器（1 2 )之間， 可依據該電流感測器（1 2 )所偵測之電流強度調整 該M0SFET( 1 〇 )的通態電阻值（4)，以使該MOSFET (1 0)恆處於將導通而未導通之臨界狀態，藉此使 該MOSFET ( 1 〇 )持續產生熱量。 由於本發明之加熱模組（1 )係以該MOSFET ( 1 200829133 0)作為加熱主體，其係藉由&控制器（1 3 )控制4 電壓調整該M0SFET ( 1 0 )的通態電阻值~。因此當 直流電源（1 1 )供應該M0SFET ( 1 〇 ) 的電壓值 為4時，則該M0SFET所產生的熱功率P係可由以下公 式得知： R〇s 請參閱第四圖所示，以N type M0SFET為例，在 一般的使用狀況下，該4控制器（1 3 )會控制f⑶大 於心撕以使該M0SFET( 1 〇 )導通，此時的I值最小， 形同短路狀態，且該M0SFET ( 1 〇 )工作在Area B。 而如该M0SFET ( 1 〇 )工作在Area A時，便可得到 一較大4值使該M0SFET ( 1 〇 )不會導通，此時該 M0SFET ( 1 〇)便可作為一加熱元件使用。 根據上述特性，當該加熱模組（i )之直流電源 (1 1 )提供予該M0SFET ( 1 0 )的穩定電壓為v， 電流為I，該電流感測1 ( ：L 2 )可_到該電流I 並回授給心控制器（1 3 )，該心控制器會依據回授 的電流調整該4，使電流^保持在設定值。此時該 M0SFET ( 1 〇 )所產生的熱功率p，若不計電流感測 器（1 2 )損失，則會同時滿足上述公式及以下之公 式： 200829133 。 請參閱第五圖所示，係為本發明之第二實施例，其 結構係大致與該第一實施例相同’而差別僅在於該第二 實施例之電路板（2)上係可依須要增加該加熱模組 (1 )的數量，以供提高昇溫之效率。 明參閱弟六圖所示，係為本發明之第三實施例，其 結構係大致與該第—實施例相同，而差别僅在於該第三 實施例之加熱模組（卫）係可藉由增加該M0SFET ( 1 0 )的數1，以供提高昇溫之效率，且該些M〇SFET (工 ’ 0 )係呈並聯狀態。 明參閱弟七圖所示，係為本發明之第四實施例，其 結構係大致與該第一實施例相同，而差別僅在於該第四 實施例之加熱模組（1 )更包括至少一導埶片（i 4) 供與該M0SFET(10)之散熱片（100)結合，以 供將散熱片（100)之熱量導引至須提昇溫度之地 方。 • 請參閱第八圖所示，係為本發明之第五實施例，其 結構係大致與該第一實施例相同，而差別僅在於該第五 實施例之電路板（2)係設於一電器設備（3 )内， 且該電路板（2 )為該電器設備（3)之主機板，其 中該電路板（2 )具有一電源電路（2 〇 ),該電源電 路（2 0 )於該電器設備（3 )的電源線連接至電源 (3 0)時即通電，該加熱模組（i )係並聯於該電 源電路（2 0 )，且其直流電源係由該電源電路（2 〇 ) 之電源所轉換提供，以使該加熱模組（1 )於該電器 200829133 設備（3 )的電源線連接至電源（3 0 )時即開使產 生熱量。 請參閱第九圖所示，係為本發明之第六實施例，其 結構係大致與該第五實施例相同，而差別僅在於該第六 實施例之電路板（2 )更具有一啟動電路（2 1 )，該 啟動電路（2 1 )通電時該電器設備（3)之作業系 統（2 2 )才啟動，而加熱模組（1 )係並聯於該啟 動電路（2 1 )，且其直流電源係由該啟動電路（2 1 ) 之電源所轉換提供，使該加熱模組（1 )於該電器設 備（3 )的作業系統（2 2 )開始運轉時才開使產生 熱量。 請參閱第十圖所示，係為本發明之第七實施例，其 結構係大致與該第一實施例相同，而差別僅在於該第七 實施例之電路板（2 )係為一介面卡，且並與該電器 設備（3)内之主機板連通。 綜上所述，當知本發明具有產業上之利用性及進步 性，而且在同類產品中均未見有類似之產品或發表而具 有新穎性，故已符合發明專利之申請要件。 200829133 【圖式簡單說明] 第一圖’係本發明第一實施例之系統方塊圖。 第二圖，係本發明第一實施例之電路圖。 第三圖’係本發明第一實施例之立體示意圖。 第四圖，係N type肋SFet的特性曲線圖。 第五圖，係本發明第二實施例之系統方塊圖。 第六圖’係本發明第三實施例之電路圖。 第七圖，係本發明第四實施例之立體示意圖。 第八圖，係本發明第五實施例之系統方塊圖。 第九圖，係本發明第六實施例之系統方塊圖。 第十圖，係本發明第七實施例之系統方塊圖。 【主要元件符號說明】 (1 )加熱模組 (100)散熱片 (1 2 )電流感測器 (14)導熱片 (2)電路板 (21)啟動電路 (3 )電器設備200829133 IX. Description of the invention: • [Technical field to which the invention pertains] The present invention relates to a technical field for improving the internal temperature of electrical equipment, in particular to a method in which an appropriate amount of heat can be dissipated to raise the temperature in the electrical equipment to a workable range. The heating module of the circuit board that enables the electrical equipment to operate in a low temperature environment. [Prior Art] • The electronic components on the internal control circuit board of general electrical equipment have a normal operating temperature of between 0 °C and 75 °C. Therefore, in some cold areas where the temperature is often below zero, the electrical equipment is required. In the normal operation of various electronic components on the circuit board, the internals of the electrical device must be maintained within an appropriate temperature range. In the early stage, the proper temperature method for maintaining electrical equipment was mainly to cover the electrical equipment with thermal insulation materials. However, electrical equipment usually has a lot of joints and control buttons, so it is possible to completely cover it. Therefore, its effect on maintaining temperature is very limited. At present, a heating device is added to the electrical device to improve the above problem. As shown in the patent number of registration No. M265900, the heating device is used to generate heat to raise the overall temperature in the electrical device to a certain value or Keep the electronics on the board close to the electronics. However, the current heating devices, such as electric heating sheets, are all disposed outside the circuit board, so that the space of the electrical equipment is occupied, and the volume of the electric steaming apparatus must be made larger. 200829133 [Invention] The purpose of the present invention is to provide a heating mold for a circuit board that can improve the temperature inside the electrical equipment and enable the electronic components on the circuit board inside the electric equipment to operate normally in a low temperature environment. Group of people. Specifically, the heating module of the circuit board of the present invention comprises a metal oxide semiconductor field effect transistor, a current source, a current sensor, and an on-state resistance controller, wherein the metal oxide The semiconductor field effect transistor has a heat sink for dissipating heat generated when the metal oxide semiconductor field effect transistor is energized to the outside, and the DC power source supplies a stable voltage to the metal oxide semiconductor field effect transistor. a current sensor is connected in series between the MOSFET and the DC power source for detecting a current intensity flowing into the MOSFET, and the on-resistance controller is connected in parallel Between the metal oxide semiconductor field effect transistor and the electric sensor, the on-resistance value of the metal oxide semiconductor field effect transistor can be adjusted according to the current intensity detected by the current sensor, so that the metal The oxide semiconductor field effect transistor is always in a critical state that will be turned on but not turned on, thereby causing the metal oxide semiconductor field effect transistor to continuously generate heat the amount. Thus, the temperature in the electrical device can be increased by the heating module so that the electronic component on the circuit board of the electrical device in the low temperature environment can still maintain normal operation, and since the heating module is directly assembled The circuit board is therefore relatively small in space, so that the size and weight of the electrical device of 200829133 can be greatly reduced, so that it is in line with the trend of light, thin, short and small in today's / electrical equipment. [Embodiment] Please refer to the first embodiment of the present invention, which is shown in Fig. 3, which indicates that the heating module (1) is disposed on a circuit board (2), wherein the heating module (1) ) includes: a metal oxide semiconductor field effect transistor (10), English 10 is called M0SFET; the full name is METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR, which has a heat sink (Working 0) for the MOSFET ( 1 〇) The heat generated during power-on is radiated to the outside; a DC power supply (1 1 ) provides a stable voltage to the MOSFET (10); a current sensor (1 2 ) is connected in series to the MOSFET ( 1 Φ 0 ) between DC power supply for detecting the current intensity flowing into the MOSFET ( 1 〇); and an on-state resistance controller (1 3 ), ie 4 controller, connected in parallel to the MOSFET (1 〇) Between the current sensor (1 2 ), the on-resistance value (4) of the MOSFET (1 〇) can be adjusted according to the current intensity detected by the current sensor (1 2 ), so that the MOSFET ( 1 0) is in a critical state that will be turned on but not turned on, thereby causing the MOSFET (1 〇) to continuously generate heatSince the heating module (1) of the present invention uses the MOSFET (1 200829133 0) as a heating body, the on-resistance value of the MOSFET (10) is adjusted by controlling the voltage of the controller (1 3). ~. Therefore, when the voltage value of the MOSFET (1 〇) supplied by the DC power source (1 1 ) is 4, the thermal power P generated by the MOSFET can be obtained by the following formula: R〇s, as shown in the fourth figure, The N type M0SFET is taken as an example. Under normal use conditions, the 4 controller (1 3 ) controls f(3) to be larger than the core tear to turn on the MOSFET (1 〇), and the I value is the smallest, and the short-circuit state is the same. The MOSFET (1 〇) operates in Area B. If the MOSFET (1 〇 ) is operating in Area A, a larger value of 4 is obtained so that the MOSFET (1 〇 ) does not turn on, and the MOSFET (1 〇) can be used as a heating element. According to the above characteristics, when the DC power supply (1 1 ) of the heating module (i) supplies the stable voltage of the MOSFET (10) to v, the current is I, and the current sensing 1 (:L 2 ) can be _ The current I is fed back to the heart controller (13), which adjusts the current according to the feedback current to keep the current at the set value. At this time, the thermal power p generated by the M0SFET (1 〇 ), if the loss of the current sensor (1 2 ) is not counted, will satisfy the above formula and the following formula: 200829133. Referring to FIG. 5, it is a second embodiment of the present invention, and its structure is substantially the same as that of the first embodiment. The only difference is that the circuit board (2) of the second embodiment can be used as needed. The number of the heating modules (1) is increased to increase the efficiency of the temperature rise. Referring to the sixth embodiment of the present invention, it is a third embodiment of the present invention, and its structure is substantially the same as that of the first embodiment, but the difference is only that the heating module (wei) of the third embodiment can be used. The number 1 of the MOSFET (10) is increased to increase the efficiency of the temperature rise, and the M〇SFETs are in a parallel state. 4 is a fourth embodiment of the present invention, and its structure is substantially the same as that of the first embodiment, except that the heating module (1) of the fourth embodiment further includes at least one. A guide piece (i 4) is provided for bonding with the heat sink (100) of the MOSFET (10) for guiding the heat of the heat sink (100) to a place where the temperature is raised. Please refer to the eighth embodiment, which is a fifth embodiment of the present invention, and its structure is substantially the same as that of the first embodiment, except that the circuit board (2) of the fifth embodiment is provided in a In the electrical device (3), and the circuit board (2) is a motherboard of the electrical device (3), wherein the circuit board (2) has a power circuit (2 〇), and the power circuit (20) When the power cord of the electrical device (3) is connected to the power source (30), the power module (i) is connected in parallel to the power circuit (20), and the DC power source is powered by the power circuit (2) The power supply is switched so that the heating module (1) is turned on to generate heat when the power cord of the appliance 200829133 device (3) is connected to the power source (30). Referring to FIG. 9 , it is a sixth embodiment of the present invention, and its structure is substantially the same as that of the fifth embodiment, except that the circuit board ( 2 ) of the sixth embodiment further has a starting circuit. (2 1 ), when the starting circuit (2 1 ) is energized, the operating system (2 2 ) of the electrical device (3) is activated, and the heating module (1) is connected in parallel to the starting circuit (2 1 ), and The DC power source is provided by the power supply of the starting circuit (2 1 ), so that the heating module (1) is turned on to generate heat when the operating system (2 2 ) of the electrical device (3) starts to operate. Referring to FIG. 10, it is a seventh embodiment of the present invention, and its structure is substantially the same as that of the first embodiment, except that the circuit board (2) of the seventh embodiment is an interface card. And connected to the motherboard in the electrical device (3). In summary, it is known that the present invention has industrial applicability and progress, and has no similar products or publications in the same kind of products and has novelty, so it has met the application requirements of the invention patent. 200829133 [Simplified description of the drawings] The first figure is a block diagram of the system of the first embodiment of the present invention. The second drawing is a circuit diagram of the first embodiment of the present invention. The third figure is a perspective view of a first embodiment of the present invention. The fourth figure is a characteristic diagram of the N type rib SFet. Figure 5 is a block diagram of a system of a second embodiment of the present invention. Fig. 6 is a circuit diagram of a third embodiment of the present invention. Figure 7 is a perspective view of a fourth embodiment of the present invention. Figure 8 is a block diagram of a system according to a fifth embodiment of the present invention. Figure 9 is a block diagram of a system of a sixth embodiment of the present invention. Figure 10 is a block diagram of a system according to a seventh embodiment of the present invention. [Main component symbol description] (1) Heating module (100) Heat sink (1 2 ) Current sensor (14) Thermal pad (2) Circuit board (21) Start circuit (3) Electrical equipment
(10) M0SFET (11) 直流電源 (13)4控制器 (2 0)電源電路 (2 2 )作業系統 (3 0 )電源(10) M0SFET (11) DC power supply (13)4 controller (2 0) power supply circuit (2 2 ) operating system (3 0 ) power supply