200829088 / 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種用來加工積體電路用的半導體基片或用來加工平板顯 示器用的玻璃平板的基片的裝置，尤其涉及一種等離子體處理裝置中的等 離子體約束裝置以及相關的等離子體約束方法。 【先前技術】 等離子處理裝置利用真空反應室的工作原理進行半導體基片和等離子 平板之基片的加工。真空反應室的工作原理是在真空反應室中通入含有適 當刻餘劑或澱積源氣體的反應氣體，然後再觸真空反應室進行射頻能量 輸入’以啟動反應氣體，來點燃和維持等離子體，以便分別刻餘基片表面 上的材料層或在基片表面上澱積材料層，進而對半導體基片和等離子平板 進行加工。舉例來說，電容性等離子體反應器已經被廣泛地用來加工半導 體基片和顯示器平板，在電容性等離子體反應財，#射頻功率被施加到 -個電極之-或二者時，就在—對平行電極之間形成電容性放電。 等離子體是擴散性的，雖然大部分等離子體會停留在一對電極之間的 處理區域中，但部分等離子體可能充滿整歡作室。舉例來說，等離子體 可能充滿真空反應室下方的處理區域外關區域。若轉子體到達這些區 域，則這些區域可能隨之發生腐钕、殿積或者·，這會造成反應彻部 2粒物’進崎低等離子處理裝置的重複使雜能，並可能會縮短反 j至或反應室轉件的工鱗命。如果稀等軒體齡在—定的工作區 2 ’ π電粒子將鮮未被髓_域，進而導致半導體基絲面雜 >可染。 τ 離不斷地致力於產生被約束在處理區域中更為穩定的等 離現有的-種思狄使用約束環來約鱗離子體，例如，美國專利 但窃，述;I—種使用水久磁鐵約束等離子體擴散的轉子體腔體。 咸疋杜二撩之在於永久磁體的磁場過強會導致被處理基片内部的敏 Ιί蓋如Γ場過弱又不能實現有效的約束等離子體擴散的目的。 子辦約Φ㈣國利US5534751描述了另一種等離子體約束裝置，該等離 子體約束裝置通過緊密排列形成窄縫隙的由絕緣材料製成的約束環抑止等 5 200829088200829088 / IX. OBJECTS OF THE INVENTION: 1. Field of the Invention The present invention relates to a device for processing a semiconductor substrate for an integrated circuit or a substrate for processing a glass plate for a flat panel display, and more particularly to a plasma A plasma confinement device in the processing device and associated plasma confinement methods. [Prior Art] The plasma processing apparatus performs processing of a substrate of a semiconductor substrate and a plasma flat plate by using the working principle of the vacuum reaction chamber. The working principle of the vacuum reaction chamber is to pass a reactive gas containing a suitable residual agent or a deposition source gas into the vacuum reaction chamber, and then touch the vacuum reaction chamber to perform RF energy input to start the reaction gas to ignite and maintain the plasma. The semiconductor substrate and the plasma plate are processed by separately depositing a layer of material on the surface of the substrate or depositing a layer of material on the surface of the substrate. For example, capacitive plasma reactors have been widely used to process semiconductor substrates and display panels, in the case of capacitive plasma reactions, when RF power is applied to - or both, - Form a capacitive discharge between the parallel electrodes. The plasma is diffusive, although most of the plasma will stay in the processing area between the pair of electrodes, but part of the plasma may fill the entire chamber. For example, the plasma may fill the outer closed area of the processing area below the vacuum reaction chamber. If the rotor body reaches these areas, these areas may become rotted, accumulate, or ·, which may cause the reaction of the 2 pieces of particles into the plasma processing device to make the repetitive energy, and may shorten the anti-j to Or the working scale of the reaction room. If the faint body is in the working area, the 2' π electro-particles will be freshly unimplanted, resulting in the semiconductor base surface miscellaneous > τ continually strives to produce a more stable isomorphism in the treatment area. The existing syllabus uses a confinement ring to squamous ion bodies, for example, the US patent but steals; A rotor body cavity that confines plasma diffusion. Salty Du Fu is based on the fact that the magnetic field of the permanent magnet is too strong, which may cause the sensitive inside of the substrate to be treated, such as the field too weak, to achieve effective constrained plasma diffusion. Sub-office Φ (4) Guoli US5534751 describes another plasma confinement device that suppresses a restraining ring made of an insulating material by closely arranging a narrow gap to form, etc. 5 200829088
子，如離子或者_過鶴時，他們中的大部 擊】約束％的表面進而防止等離子體的擴散。但該方 效地隔絕帶输刊露至處理區域外，不能完全隱電磁波顿露 法解決減岭的帶餘林處韻域料賴二絲敝電。 … 另外，美國專利US5"8932通過加入接地的導電延伸物來大大減少處 理=域外的等勢場線的密度，以減少處理區域外的電場在處理區域外誘發 =的帶電粒子與反應室壁發生加速碰撞，形成不希望有的等離子體。ς 疋這種方法並不能完全地阻止處理區域外的電場的形成。 【發明内容】 本發明的目的在於類-鮮軒翻束裝置，克服了财技術的不 足，解決因等離子體擴散而引起的等離子處理裝置的處理腔體污染問題。 本發明的另一目的在於提供一種等離子體約束裝置，其不僅能有效地 減少處理腔至内的處理區域外的能夠點燃和/或維持二次等離子體的電子的 密度，而且可以為等離子體處理裝置的處理區域提供電場遮罩，從而進一 步阻止等離子體污染等離子體處理裝置的腔體。 本發明是通過以下技術方法實現的·· 一種用於等離子體處理裝置的等離子體約束裝置，設置於所述等離子 體處理裝置的處理區域和排氣區域之間，所述等離子約束裝置包括：電氣 接地元件；及導電元件，所述導電元件位於所述電氣接地元件上方，且二 者相互電絕緣’該導電元件設置有若干個通道，以利於所述處理區域裏被 使用過的反應氣體及副產品氣體通過此通道，被使用過的反應氣體及副產 品氣體内包括帶電粒子及中性粒子，該通道的大小被設置成當等離子體内 的帶電粒子通過所述通道時可以使帶電粒子被中和，同時允許中性粒子通 過。 該電氣接地元件和該導電元件之間的電氣絕緣層，用以使該電氣接地 元件和該導電元件相互電絕緣。 該等離子體約束裝置，進一步包括：至少一個電氣絕緣隔塊，定位於 所述電氣接地元件和所述導電元件之間，使得該電氣接地元件和該導電元 件相互電絕緣。 6 200829088 . 在該等離子體處理裝置的處理區域中提供有射頻功率發射用以激發等 離子體’該m接地猶可购繼魏量發_達辦軒體處 的排氣區域。 衣i 所述的等離子體約束裝置，其中該電氣接地播麵述導電元 面至少有一部分經過陽極化處理。 ^ 該導電元件上塗覆有可以顯著抵抗所述處理區域内產生的等離 餘的材料。 在所述導電元件塗覆所述抗腐餘材料之前，所述導電元件或所述電氣 接地元件至少部分地經過陽極化處理。 φ 該電氣絕緣層經由導電元件或者魏接地元件的表面陽極化處理或者 表面塗敷絕緣塗層而形成。 該導電元件由若干個同心環構成。 該導電元件包含-個板，該板上開設有通槽&穿孔以形成所述的通道。 該導電元件浮地。 該導電元件包括第-部分和第二部分，所述第一部分和第二部分配合 形成所述若干個通道，其尺寸設定為可中和通過所述通道的帶電粒子而允 許電中性粒子通過。 此外，本發明還公開-種用於等離子體處理裝置的等離子體約束裝 Ϊ，設置於所述等離子體處理裝置的處理區域和排氣區域之間，該等離子 約束裝置包括··電驗地元件，其具有—絲面；魏、魏層，至少部分地 位於並覆蓋所述電氣接地元件的上表面；若干個相互間隔的導電元件，所 述右干個導電元件互相之㈣連接並設置於所述轉子體處理裝置的處理 區域和排氣區域之間，其中至少一個所述導電元件至少部分地與所述電氣 絕緣層相接觸。 該電氣接地讀形成有至少-鮮通的H該魏接地元件具有邊 緣部分，該電氣絕緣層置於所述邊緣部分的上表面。 所述若干個導電元件包含同心設置的多個環，環與環之間形成各自的 通道，母一所述通道的尺寸設定為可中和通過所述通道的帶電粒子而允許 電中性粒子通過。 7 200829088 *· 該導電元件由金屬製成，並隨後經過陽極化處理，或者由表面塗敷有 抗等離子體腐蝕塗層的金屬製成。 該導電元件由掺有雜質的半導體材料形成，該雜質為能使半導體材料 增加導電性能的各種元素或者各種元素的組合。 該等離子體處理裝置包括一形成所述處理區域的導電腔體以及一個安 裝，所述導電腔體上的陽極和陰極，其中該陰極被一導電外殼所包圍，該 電氣接地元件與所述陰極的導電外殼或與所述導電腔體相電連接。 再者，本發明還公開-種等離子體約束裝置，包括：電氣接地元件， $有至少-個貫穿的通道；電氣絕緣層，與該電氣接地元件呈至少部分覆 • 盖關係設置；第一組相互間隔的大致同心朝向的導電環，置於該電氣絕緣 層上，並與該電氣接地元件呈相互間隔關係設置；以及第二組相互間隔的 域同心躺的導«，與第-組Μ環交叉配合配置，以在第-組和第 ，組導電環之_财若干通道，顧道的財設絲可作通過所述通 道的帶電粒子而允許電中性粒子通過。 所述第-組和第二組導電環無航絕緣，並由經珊極域理的金 屬或表面塗覆有氧化紀(Υ203)的金屬製成。 本發明的等離子約束裝麵為脑軸有若干個通道的導電元件，因 此能夠將通過所述通道的帶電粒子中和，從而阻止了大部分的帶電粒子泡 • 綱所述處理區域外，基本解決了在處理區域外等離子體的二次放電問 題，同時也提高了處理區域内等離子體的利用率。此外，由於本發明的等 2子約束裝置有錄該導電元件下方並與之相互電絕緣的電氣接地元 :，從而為轉子體處观域提供了電場鮮，進而更加有效地將可能泡 漏到等離子體處理區域外的帶餘子群在處域之内，這也就進一步 =防止了獅子體在處職域相二次放電，改善了等離子體在處理區域 =利用率’並極佳地防止了等離子麟腔體可能造成的。 【實施方式】 =有關本發明之|^_容及技術細，現配合圖式說明如下： 清參閱第1目，為運用本發明等離子體約束裝置的等離子體處理裝置 、…構示,^^目如圖所示的等離子體處理裝置1具有一個處理腔體η，處 8 200829088 理腔體11基本上為細彡且其備基本上垂直，處理腔體U内具有相互平 行設置的-均極12a和一下電極12b。通常，在上電極12a與下電極12b 之間的區域為處理_2，該處理錢2將形成高頻能量以點燃和維持等離 子體4。在下電極12b上方放置待加工的工件（未圖示），虹件可以是待 X】钕，加JL的半導體基# ’或者4加卫成平板顯示器的玻璃平板。反應氣 體從氣體注人口（未圖示）被輸人至處理腔體n内，一個或多個射頻電源 Ma、Mb可以被單獨地施加在下電極版上或同時被分別地施加在上電極 l2a與下電極12b上，用以將射頻功率輪送到下電極必±或上電極仏與 I電極既上，從而在處理腔體n内部產生大的電場。大多數電場線被包 含在上電極12a和下電極丨沈之間的處理區域2内，此電場對少量存在於 處理腔體11内部的電子進行加速，使t子與輸入敝應氣體之分子碰撞。 這些碰撞導致反魏體_子化和轉子體驗發，㈣在處理腔體U内 產生等離子體4。反應氣體的中性氣體分子在經受這些強電場時失去了電 子，留下帶正電的離子。帶正電的離子向著下電極12b方向加速，與被處 理工件上的巾性物質結合，激發工件加工，即雜、澱稱。在等離子體 ，理裝置1的合適的某個位置處設置有排氣區域6，排氣區域6與外置的排 氣裝置（未圖示）相連接，用以在處理過程中將使用過的反應氣體及副產 品氣體抽出處理區域2。 根據本發明的發明目的，本發明的等離子體約束裝置7〇的一種實施方 式如第1圖中所示，其用於使處理腔體11内的等離子體4放電被基本約束 在上電極l2a和下電極既之間的處理區域2内，儘量減少處理區域2外 (例如’排氣區域6)產生不希望有的二次等離子體放電。 本發明的等離子體約束裝置7〇被設置位於處理區域2的周圍，並位於 處理區域2與排氣區域6之間，用以控制被使用過的反應氣體的排出，並 且當反應氣體中的帶電粒子通過該等離子體約束裝置7〇時將它們電性中 和，從而將放電基本約束在處理區域2以内，以防止等離子處理裝置使用 過程中可能造成的腔體污染問題。優選的實施是，如第丨圖所示，等離子 體約束裝Ϊ 7G設置轉離子體處理裝置！巾的處理題u的_壁與下 電極12b的外周圍之間的間隙内。 9 200829088 .月多閱第2圖及第3圖’第2圖是本發明等離子體約束裝置7〇的一種 實施例的^®’第3目是第2 ®所述等離子體約束裝置7()的局部放大圖。 如Θ所示專離子約束裝置％包括：電氣接地元件η及導電元件励，其 中該導電元件_位於所述電氣接地元件71上方，且二者相互電絕緣 (deetrieally i_lated relative theret〇)，該導電元件ι〇〇設置有若干個通道 102 ’以=於該處理區域2裏被使用過的反應氣體及副產品氣體通過此通道 102。如前所述，等離子體4内包括帶電粒子及中性粒子，該通道1〇2的大 小被設置成當等離子體4内的帶電粒子通過所述通道1〇2時可以使帶電粒 子被中和，同時允許中性粒子通過。 繼績參照第2圖及第3圖所示，該導電元件觸包括一體形成的導電 支撐環90及若干個導電同心環1〇1。導電支撐環9〇可以方便地支撐於該電 氣接地元件71的上方。該導電同心環1〇1及導電支撐環9〇之間形成有該 通道1〇2 ’該通道102 -端面向等離子體處理裝置丨的處理區域2與等離子 體4處理相接觸«近，另一端與電氣接地元件71中形成的通道％相貫 通，再和轉子體處理裝置i耕設賭氣裝置（未圖示）相連通，以便 使等離子魏«置1的處珊域2巾朗過的反應氣體及副產品氣體能 夠從處理區域2排到排氣區域6。該通道1G2的尺寸設計，應當保證從處理 區域2内離開的來自等離子體4的帶電粒子在離開此通道搬時，必須移 動的距離大於該粒子的平均自由程。 該電氣接地兀件71具有上表面74;及與該上表面74相對的下表面75、 外邊緣72以及與該外邊緣72相對的内邊緣73。該電氣接地元件Ή形成有 一個或多個與導電元件100上的通道102相連通的通道76，該通道76貫穿 於電氣接地元件71的上表面74和下表面75，以使用過的反應氣體能夠由 此排出。電氣接地元件71採用業界熟知的方法與大地相連接或與共電位部 件相連接。比如，電氣接地元件71可以直接與大地相連接，也可以與等離 子體處理裝置1的導電腔體相電連接，或者，也可以與下電極12b上的導 電外殼（未圖示）相電連接，在後兩種接法中，分別以等離子體處理裝置i 的導電腔體和導電外殼為共同大地。 200829088 該導電元件1GG與電氣接地元件71二者相互電絕緣。為了實現二者相 互電絕緣，可以在導電元件1〇〇與電氣接地元件71的接觸面之間設置一電 氣絕緣層80(inSulativelayer)(如第3圖所示）。該電氣絕緣層⑽與電氣接 地兀件Ή或導電元件100的至少一部分1至少部分或全部覆蓋關係，以使 導電元件100與電氣接地元件Ή相互之間電絕緣。該電氣絕緣層80可以 設置在電氣接地元件71的上表面74之上，也可以設置在導電元件100上 的導電支撐環90的下表面。所述電氣絕緣層8〇可以至外邊緣72向内邊緣 73的方向徑向延伸。電氣絕緣層8〇可以通職冑氣接地元件71或導電元 件1〇〇的表面作陽極化處理而得（容後詳述）。所述電氣絕緣層8〇可以為 如第3圖所示的單層絕緣層，也可為用不同技術或同種技術形成的多層絕 # 緣層（未圖示），以實現更佳的絕緣效果。該導電支财％具有外邊緣91， 大體與電氣躺树71的外雜72共面，並糾具外雜91相對 的内邊緣92。該導電元件100為由若干個相互電連接的導電同心環1〇1與 所述導電支撐環90通過某種公知的連接方式相互連接成一個整體。由於導 電元件100與電氣接地元件71電絕緣，目此戶斤述導電同心環⑻、導電支 撐環90均舆電氣接地元件71電絕緣。於是在處理工件時，若干個導電同 心環101與導電讀環9G -難成稍地的或浮地(細咖卿flGated⑽ the ground)的導電單元。 本發明的等軒_束裝置7G補可暖被個反絲體和副產 • 品氣體能快速地離開處理腔體11的處理區域2，而且能有效地將等離子體 4放電約束在處理區域2内，接下來將說明其工作原理。 首先，等離子體約束裝置70的導電元件卿之間構成通道1〇2，由於 帶電粒子在處理區域2的電場中具有較快的速度和方向性，因而包含使用 過的反應氣體中的絕大多數帶電粒子在被排氣裝置抽吸時會由於其方向性 和速度碰撞到導電元件100的上表面上而無法通過，而一小部分沒有撞擊 至上表面的帶電粒子會通向通道撤，也由於通道1G2特定的尺寸設計，使 得從處理區域2内離開的來自等離子體4的帶餘子在離開通道⑴2時， 必須移動的距離大於該帶電粒子的平均自由程，使得從處理區域2中排出 的用過的反應氣體中的絕大部分帶電粒子在通過這些通道1〇2時至少要與 200829088 通道102的側壁碰撞一次，這些碰撞將帶電粒子上的電荷中和，使得碰撞 後離開通道102雜子都是中性的。結果是，使得在處理區域2以外的帶 電粒子數被大大減少’排出的氣體不會使等離子體的放電延伸到處理區域2 外的空間，處理區域2外的放電的趨勢將大大減少，從而基本上消除空間 以外的放電現象。 接著，經過前述導電元件100之間的通道1〇2的約束作用以後，仍然 會有少數的帶電粒子可能會從通道102逃逸出，並進入處理區外造成二次 等離子體放電，本發_雜子_束裝置7〇所包含的魏接地元件71 可以有效地解決此問題。電氣接地元件71為導電元件並且被接地，電氣接 地元件71設置於導電元件100下方，可以構成一個射頻電場遮罩，將本來 可能向下電極⑶外徑方向發散到處理區域2外_動射頻的電場（雜散 電場）被有效遮罩在鋪頻電場遮勒。為了實現更好騎頻電場遮罩效 果，一種實施方式是，電氣接地元件71可以被設置成網狀結構，形成一個 射頻電場遮罩殼，由於處理區外的雜散電場的密度的降低，可以大大減少 --人等_子體產生。因此，本發明的電氣接地元件71可以遮罩雜散電場， 以降低處魏域2外面的電場酸，從等離子體4產生的源社消除或降 低處理區域2外的二次轉子體產生。由上述說明可知，本發_等離子 體約束裝置70可以實現兩次約束作用，先透過通道1〇2實現第一次約束作 用，再透過該電氣接地元件71實現第二次約束作用，實現對帶電粒子的兩 次約束作用，有效地減少了處理區外的不希望有的等離子體的形成。 需要說明的是，由於電氣接地元件71接地，並且導電元件1〇〇與電氣 接地元件71二者相互電絕緣，因此，導電元件1〇〇相對於大地是電懸浮的 或浮地(electrically floated from the ground)的。因此，在處理裝置處理過程 中，導電元件100上的電勢與處理區域2内的等離子體4的電勢大致上相 等或為等電勢，這種設置可以使得處理裝置在處理的過程中，盡可能地減 少使用過的反應氣體及副產品tit巾鱗離子體4巾的帶電粒子加速衝向 導電元件100，並在導電元件100的表面產生麟或碰撞，從而減少由此漱 射或碰撞而產生的污染。 12 200829088When the ions, such as ions or _ over the crane, most of them hit the surface to restrain the diffusion of the plasma. However, the effective isolation belt is not exposed to the processing area, and it is impossible to completely solve the problem of the reduction of the forest. ... In addition, U.S. Patent 5 "8932 greatly reduces the density of the equipotential field lines outside the processing area by adding grounded conductive extensions to reduce the occurrence of electric fields outside the processing area induced by charged particles and reaction chamber walls. Accelerate the collision and form an undesired plasma.疋 疋 This method does not completely prevent the formation of an electric field outside the processing area. SUMMARY OF THE INVENTION The object of the present invention is to solve the problem of contamination of a processing chamber of a plasma processing apparatus caused by plasma diffusion by overcoming the shortage of financial technology. Another object of the present invention is to provide a plasma confinement device which can not only effectively reduce the density of electrons capable of igniting and/or maintaining a secondary plasma outside the processing region to the inside of the processing chamber, but also can be plasma treated. The processing area of the device provides an electric field mask to further prevent plasma from contaminating the cavity of the plasma processing apparatus. The present invention is achieved by the following technical method: A plasma confinement device for a plasma processing apparatus disposed between a processing region and an exhaust region of the plasma processing apparatus, the plasma confinement device comprising: electrical a grounding element; and a conductive element, the conductive element being located above the electrical grounding element and electrically insulated from each other. The conductive element is provided with a plurality of channels to facilitate the used reactive gases and by-products in the processing area The gas passes through the passage, and the used reaction gas and by-product gas include charged particles and neutral particles, and the passage is sized to neutralize the charged particles when the charged particles in the plasma pass through the passage. At the same time, neutral particles are allowed to pass. An electrically insulating layer between the electrical grounding element and the electrically conductive element for electrically isolating the electrical grounding element from the electrically conductive element. The plasma confinement device further includes: at least one electrically insulating spacer positioned between the electrical ground element and the electrically conductive element such that the electrical ground element and the electrically conductive element are electrically insulated from each other. 6 200829088 . A radio frequency power emission is provided in the processing region of the plasma processing apparatus to excite the plasma. The m ground is still available to purchase the exhaust region at the body. The plasma confinement device of claim i, wherein at least a portion of the electrically conductive ground surface of the conductive element is anodized. ^ The conductive element is coated with a material that is significantly resistant to the resulting separation in the processing region. The electrically conductive element or the electrically grounded element is at least partially anodized prior to application of the anti-corrosion material to the electrically conductive element. φ The electrically insulating layer is formed by surface anodization of the conductive element or the Wei ground element or surface coating of an insulating coating. The conductive element is composed of a number of concentric rings. The conductive element comprises a plate having a through slot & perforation to form the channel. The conductive element floats. The electrically conductive element includes a first portion and a second portion that cooperate to form the plurality of channels sized to neutralize charged particles passing through the passage to permit passage of electrically neutral particles. In addition, the present invention also discloses a plasma confinement device for a plasma processing apparatus disposed between a processing region and an exhaust region of the plasma processing apparatus, the plasma confinement device including an electrophoretic component , having a silk surface; a Wei, Wei layer, at least partially located and covering the upper surface of the electrical grounding element; a plurality of mutually spaced conductive elements, the right dry conductive elements being connected to each other and disposed at the Between the processing region and the exhaust region of the rotor body treatment device, at least one of the electrically conductive elements is at least partially in contact with the electrically insulating layer. The electrical ground read is formed with at least a fresh pass. The Wei ground element has a rim portion, and the electrically insulating layer is placed on the upper surface of the edge portion. The plurality of electrically conductive elements comprise a plurality of concentrically arranged rings, the rings forming a respective channel therebetween, the channels of the parent being sized to neutralize charged particles passing through the channels to allow passage of electrically neutral particles . 7 200829088 *· The conductive element is made of metal and subsequently anodized or made of metal coated with a plasma corrosion resistant coating. The conductive member is formed of a semiconductor material doped with impurities, which are various elements or combinations of various elements that enable the semiconductor material to increase electrical conductivity. The plasma processing apparatus includes a conductive cavity forming the processing region and an anode and a cathode mounted on the conductive cavity, wherein the cathode is surrounded by a conductive outer casing, the electrical grounding element and the cathode The electrically conductive outer casing is electrically connected to the electrically conductive cavity. Furthermore, the present invention also discloses a plasma confinement device comprising: an electrical grounding element having at least one through passage; an electrically insulating layer disposed at least partially in a cover relationship with the electrical grounding member; Arranging substantially concentrically oriented conductive rings disposed on the electrically insulating layer and disposed in spaced relation to the electrical grounding member; and a second set of mutually spaced domains concentrically lying, and the first set of turns The cross-fit configuration allows for the passage of electrically neutral particles through the charged particles of the channel in the first group and the first group of conductive rings. The first and second sets of conductive rings are unseaworthy and are made of a metal that is smear-coated or a metal coated with an oxidized (Υ203) surface. The plasma confinement mounting surface of the invention is a conductive element having a plurality of channels on the brain axis, so that the charged particles passing through the channel can be neutralized, thereby preventing most of the charged particle bubbles from being treated outside the processing area, and basically solving the problem. The problem of secondary discharge of plasma outside the processing area also increases the utilization of plasma in the processing area. In addition, since the equal-sub-constraining device of the present invention has an electrical grounding element underlying and electrically insulated from the conductive element: thereby providing an electric field fresh to the field of view of the rotor body, thereby more effectively leaking the bubble to The remaining subgroup outside the plasma treatment area is within the domain, which further prevents the lion's body from being discharged in the secondary phase, improving the plasma in the treatment area = utilization rate and excellently preventing it. Plasma lining may be caused. [Embodiment] = The details of the technology and the details of the present invention will now be described with reference to the following drawings: Refer to Item 1 for the purpose of constructing a plasma processing apparatus using the plasma confinement device of the present invention, ...^ The plasma processing apparatus 1 as shown in the figure has a processing chamber η, where the chambers 11 200829088 are substantially fine and substantially vertical, and the processing chamber U has parallel-parallel 12a and the lower electrode 12b. Generally, the area between the upper electrode 12a and the lower electrode 12b is Process_2, which will form high frequency energy to ignite and sustain the plasma 4. A workpiece (not shown) to be processed is placed above the lower electrode 12b, and the rainbow member may be a glass plate to be replaced by a JL semiconductor substrate or a flat panel display. The reaction gas is input from the gas injection population (not shown) into the processing chamber n, and the one or more RF power sources Ma, Mb may be separately applied to the lower electrode plate or simultaneously applied to the upper electrode 12a and The lower electrode 12b is used to send the RF power to the lower electrode or to the upper electrode and the I electrode, thereby generating a large electric field inside the processing chamber n. Most of the electric field lines are contained in the processing region 2 between the upper electrode 12a and the lower electrode sinker. This electric field accelerates a small amount of electrons existing inside the processing chamber 11, causing the t-substance to collide with the molecules of the input gas. . These collisions result in an anti-Weitronization and a rotor experience, and (iv) a plasma 4 is generated in the processing chamber U. The neutral gas molecules of the reactive gas lose electrons when subjected to these strong electric fields, leaving positively charged ions. The positively charged ions are accelerated toward the lower electrode 12b, and are combined with the material on the treated workpiece to excite the workpiece to be processed, i.e., miscellaneous or symmetrical. At a suitable location of the plasma, the device 1 is provided with an exhaust region 6 which is connected to an external exhaust device (not shown) for use during processing. The reaction gas and the by-product gas are extracted from the treatment region 2. According to an object of the present invention, an embodiment of the plasma confinement device 7 of the present invention is as shown in Fig. 1 for discharging the plasma 4 in the processing chamber 11 to be substantially confined to the upper electrode 12a and In the processing region 2 between the lower electrodes, an undesirable secondary plasma discharge is generated as much as possible outside the processing region 2 (e.g., 'exhaust region 6'). The plasma confinement device 7 of the present invention is disposed around the processing region 2 and between the processing region 2 and the exhaust region 6 for controlling the discharge of the used reaction gas, and is charged in the reaction gas. The particles are electrically neutralized as they pass through the plasma confinement device 7 to substantially confine the discharge within the processing region 2 to prevent cavity contamination problems that may result from the use of the plasma processing device. A preferred implementation is that, as shown in the figure, the plasma confinement device 7G is provided with a trans-ion processing device! The towel is treated in the gap between the wall of the problem u and the outer periphery of the lower electrode 12b. 9 200829088 .More than 2 and 3 of the month 'Fig. 2 is an embodiment of the plasma confinement device 7 of the present invention. The third object is the plasma confinement device 7 (2) Partial enlarged view. The specific ion confinement device % as shown in FIG. 2 includes: an electrical grounding element η and a conductive element excitation, wherein the conductive element _ is located above the electrical grounding element 71 and is electrically insulated from each other (deetrieally i_lated relative the ret) The component ι is provided with a plurality of channels 102' to pass the reactive gas and by-product gas used in the processing region 2 through the channel 102. As described above, the plasma 4 includes charged particles and neutral particles, and the channel 1〇2 is sized such that charged particles are neutralized when charged particles in the plasma 4 pass through the channel 1〇2. While allowing neutral particles to pass. Referring to Figures 2 and 3, the conductive member contacts include an integrally formed conductive support ring 90 and a plurality of conductive concentric rings 1〇1. The conductive support ring 9A can be conveniently supported above the electrical grounding element 71. The conductive concentric ring 1〇1 and the conductive support ring 9〇 are formed with the channel 1〇2'. The processing region 2 of the channel 102-end facing the plasma processing device is in contact with the plasma 4 treatment «near, the other end It is connected to the channel % formed in the electrical grounding element 71, and is connected to the rotor body processing device i for cultivating a gas-picking device (not shown) so that the plasma gas is set to be in the vicinity of the gas. The by-product gas can be discharged from the treatment zone 2 to the exhaust zone 6. The channel 1G2 is sized to ensure that charged particles from the plasma 4 exiting the processing zone 2 must move more than the mean free path of the particle as it leaves the channel. The electrical grounding element 71 has an upper surface 74; a lower surface 75 opposite the upper surface 74, an outer edge 72, and an inner edge 73 opposite the outer edge 72. The electrical grounding element Ή is formed with one or more passages 76 that communicate with the passages 102 on the electrically conductive elements 100. The passages 76 extend through the upper surface 74 and the lower surface 75 of the electrical grounding elements 71 to enable the used reactive gases to This is discharged. The electrical ground element 71 is connected to ground or to a common potential component by methods well known in the art. For example, the electrical grounding element 71 may be directly connected to the ground, or may be electrically connected to the conductive cavity of the plasma processing apparatus 1, or may be electrically connected to a conductive outer casing (not shown) on the lower electrode 12b. In the latter two connections, the conductive cavity of the plasma processing apparatus i and the conductive outer casing are respectively common ground. 200829088 The conductive element 1GG and the electrical ground element 71 are electrically insulated from each other. In order to achieve electrical insulation between the two, an insulative layer (as shown in Fig. 3) may be disposed between the contact faces of the conductive member 1A and the electrical ground member 71. The electrically insulating layer (10) is at least partially or fully covered with the electrical grounding member or at least a portion 1 of the electrically conductive member 100 to electrically insulate the electrically conductive member 100 from the electrically grounded member. The electrically insulating layer 80 can be disposed over the upper surface 74 of the electrical grounding element 71 or can be disposed on the lower surface of the electrically conductive support ring 90 on the electrically conductive component 100. The electrically insulating layer 8 can extend radially to the outer edge 72 in the direction of the inner edge 73. The electrically insulating layer 8 can be anodized by the surface of the xenon grounding element 71 or the conductive element 1A (described in detail later). The electrical insulating layer 8 can be a single-layer insulating layer as shown in FIG. 3, or a multilayer insulating layer (not shown) formed by different techniques or the same technology to achieve better insulation effect. . The conductive support % has an outer edge 91 that is substantially coplanar with the outer fuse 72 of the electrical lie tree 71 and that aligns the inner edge 92 opposite the outer rim 91. The conductive member 100 is integrally connected to each other by a plurality of electrically conductive concentric rings 1〇1 electrically connected to each other and the conductive support ring 90 by a known connection. Since the conductive element 100 is electrically insulated from the electrical grounding element 71, the conductive concentric ring (8) and the conductive support ring 90 are electrically insulated from the electrical grounding element 71. Thus, in the processing of the workpiece, a plurality of conductive concentric rings 101 and conductive read rings 9G - are difficult to form slightly or floating (10) the ground. The illuminating device 7G of the present invention can quickly warm away from the processing region 2 of the processing chamber 11 by a reverse filament and by-product gas, and can effectively restrain the plasma 4 discharge in the processing region 2 Inside, we will explain how it works. First, the conductive elements of the plasma confinement device 70 form a channel 1〇2, and since the charged particles have a relatively fast velocity and directivity in the electric field of the processing region 2, they contain the vast majority of the used reaction gases. When the charged particles are sucked by the exhaust device, they will not pass due to their directivity and velocity colliding with the upper surface of the conductive member 100, and a small portion of the charged particles that do not hit the upper surface will lead to the passage, and also because of the passage. 1G2 is specifically sized such that the band from the plasma 4 exiting the processing zone 2 must move a greater distance than the mean free path of the charged particle when leaving the channel (1) 2, such that it is discharged from the processing zone 2 Most of the charged particles in the passing reaction gas collide with the sidewall of the 200829088 channel 102 at least once through these channels, and these collisions neutralize the charge on the charged particles, so that the collisions leave the channel 102 after the collision. It is neutral. As a result, the number of charged particles outside the processing region 2 is greatly reduced. 'The discharged gas does not cause the discharge of the plasma to extend to the space outside the processing region 2, and the tendency of the discharge outside the processing region 2 is greatly reduced, thereby basically Eliminate the discharge phenomenon outside the space. Then, after the constraint of the channel 1〇2 between the conductive elements 100, a small number of charged particles may escape from the channel 102 and enter the processing area to cause a secondary plasma discharge. The Wei grounding element 71 included in the sub-beam device 7〇 can effectively solve this problem. The electrical grounding element 71 is a conductive element and is grounded. The electrical grounding element 71 is disposed under the conductive element 100 to form a radio frequency electric field mask, which may originally diverge toward the outer diameter of the lower electrode (3) to the outside of the processing area 2 The electric field (stray electric field) is effectively masked at the spreading electric field. In order to achieve a better riding frequency electric field masking effect, in one embodiment, the electrical grounding element 71 can be configured as a mesh structure to form a radio frequency electric field shielding shell, which can be reduced due to the density of the stray electric field outside the processing area. Significantly reduced -- people and so on _ child body. Therefore, the electrical grounding element 71 of the present invention can mask the stray electric field to reduce the electric field acid outside the Wei domain 2, and the source generated from the plasma 4 eliminates or reduces the generation of the secondary rotor body outside the processing region 2. It can be seen from the above description that the present invention _plasma restraint device 70 can realize two constraining effects, first realize the first constraint through the channel 1 〇 2, and then realize the second constraint through the electrical ground element 71 to realize the charging. The two confinement of the particles effectively reduces the formation of undesired plasma outside the processing zone. It should be noted that, since the electrical grounding element 71 is grounded, and the conductive element 1〇〇 and the electrical grounding element 71 are electrically insulated from each other, the conductive element 1〇〇 is electrically floating or floating relative to the earth (electrically floated from The ground) Therefore, during processing of the processing device, the potential on the conductive element 100 is substantially equal to or equal to the potential of the plasma 4 in the processing region 2, such an arrangement that the processing device can be as much as possible during processing The charged particles which reduce the used reaction gas and the by-product tit scales are accelerated toward the conductive member 100, and a lining or collision is generated on the surface of the conductive member 100, thereby reducing contamination caused by the smashing or collision. 12 200829088
用具中，導電元件和電氣接地元件71可以選 和電氣接地Jtf L i 、不銹鋼、鶴等）。優選地，導電元件_ 100和電氙接地 、成。為了形成電氣絕緣層80,可以將導電元件 71相互接觸的表面進行陽極化處理。陽極化處理是- 用於多^㈣W理可以使金4表_成—層氧化保護層。陽極化處理可 緣性，並且使金彡成堅硬的覆層，或者令金屬具有電氣絕 化層，与輯Sitr 财所述__⑼是銘陽極 地^; 撐環9g面域地耕71的麵或電氣接 地171 _導電支撐環％的表面進行陽極化處理而得到。 的戶=^本發明的另—實施方式中，導電元件觸和電氣接地元件？！ =化處理。更進—步地，在本發明的其他實施中， ^件100中的若干個導電環及通道1〇2朝向處理區域或接綱等離子 偏2區域可以首先進行陽極化處理，隨後再紐—雜止等離子體腐 、、、比如·塗覆-層氧化紀(Y2〇3)材料，以進一步防止等離子體腐餘。 乍為本發月的其他種實施方式，電氣絕緣層80可以經由所述導電元 卿或者電氣接地元件η的接觸表面塗敷一層絕緣塗層而形成。 作為本發明的其他_種實施方式，電氣絕緣層8G可用具有相同功能的 =絕緣隔塊（糊示）來械，該電氣絕緣隔塊可以使導電元件腦和 電乳接地70件71相互魏.，也可關時起連接或支撐作帛，使二者連 接更穩定。電氣絕緣隔塊可類似地使導電元件励處於浮地的狀態。 作為本發明的其他-種實齡式，所料電元件丨⑻也可以由捧有雜 質的具有導電性的轉體㈣形成，其巾所獅縣麟使轉體材料具 有導電性能的各種元素或者各種元雜合，優先地，在本實施方式中，所 述導電元件100由摻雜有硼元素或氮元素的矽半導體材料形成。 在第2圖及第3圖所示的實施方式中，導電元件1〇〇由若干個導電同 U環101及導電支樓環90 —起形成，導電同心環1〇1之間形成通道1〇2。 作為此實施方式的變形，導電元件應可以為一片一體形成的導電板（未 圖示）’該導電板圍繞下電極12b設置而大致成環狀，並設置於所述等離子 tl處理裝置1的處理區域2和排氣區域6之間，導電板上開設有通槽或穿 13 200829088 =以形撕述騎道1〇2。通道1G2的大小被設置成#雜子體4内的 帶電粒子通過所述通道1G2時可以使帶電粒子被中和，同時允許中性粒子 通過。 請參閲第4圖及第5圖，第4圖是本發明等離子體約束裝置的另—種 實施例的立齡賴。第5圖是第4騎述等離子體約束裝置安裝在等離 =體處理裝置中的局·面圖。如_示，等離子體約束裝置⑽包括電 氣接地元件in ’所述電紐地元件ηι具有—個不賴的義邊沿ιΐ2、 一個與所述外圈邊沿m相對的内邊緣⑴。除此之外，該電氣接地元件m 還具有-個上表面m以及-個與之相對的下表面115。另外，在電氣接地 兀件m中形成有右干個貫穿其上表面114和下表面⑴的通道ιΐ6。盥前 述者類似’該等離子體約束裝置110置於等離子體處理裝置⑽處理區域2 和排氣區域6之間(如第5圖所示），該區域在圖中僅部分示出，其中 離子體處理裝置如第5圖所示。 與第2圖和第3圖所示的等離子體約束裝置70類似，本實施例中的等 離子體約束裝置11G包含-個電氣絕緣層⑽，在第*圖巾僅部分顯示，其 與電氣接地元件111的上表面m呈至少部分覆蓋關係。設置於電氣絕緣層 120上的=第-部分(或第一組)相互間隔的、同心朝向的導電元件⑽。如 第4圖和第5 ®所示，該第—部峨第—組)相互間隔_心朝向的導電元 件130此處為同心環，其以預先確定關距相互間隔排列設置。其中所述 相互間隔並同’向的導電元件⑽具社邊沿131，以及—個與所述上邊 /口131相對的下邊沿132。所述相互間隔的同心朝向的元件之間具有若干個 33通道133可以各納將在隨後段落中詳述的第二部分導電元件。另 外如第4圖所*，在各個相互間隔的同心朝向的導電元件⑽的上邊沿 131上形成若干個相互間隔的鋸齒狀區域134。此外，可以看出若干個相^ 間隔的同心朝向的導電元件⑽被若干個支撐元件出定位，與電氣接地 元件111，成預先確定的間距。所述若干個支撐元件W通過電氣絕緣層 120與電氣接地树m保持相互電絕緣。因此，第—部分(或第_組)相二 間隔的同〜朝向的導電元件⑽與電氣接地元件⑴呈預先確定的相互間 隔關係’並相對於等離子體處理裝置處於浮地的狀態。 200829088 如第4圖所示，等離子體約束裝置11〇還具有第二部分（或第二 相互間隔的同心朝向的導電元件（或環）⑽，與導電元件⑽的第一 電環配合顧。正如在下文巾會提_，在第—或第二組導電元件或環之 間具有若干俩道133，魏向財被設定為可姊通過舰财⑶的 =粒=而允許電中性粒子通過1於這—考慮，第二部分或组相互間隔的 ϋ ，件140具有—個上邊沿14卜以及—個與之相對的下邊 沿142。母個環的下邊沿142的一部分應與對應的安裝其上的—組支撐元件 135相接觸，或鱗應的第—組相互間__朝向轉 沿Β2整合為-體。參閱第5圖可清晰地看到，第二組同心朝向 -個相互間1¾陳挺伸的支撐元件143，該讀元件14 的相互間隔_心躺的環處於基本固定的相對位置上。在第 看出’每個支撐元件143都可以與上邊沿131上渺 … 透1上軸的對餘互間隔的鋸 _&域m相匹配。進-步地，如第4圖所示，若干個通道144在對應 =相互間關心、躺的導電元件⑽之間形成。通道144 _向或尺找 疋為可以允許對應的相互間隔的同心朝向的環可匹^^嵌套並放在相互間隔 的同心朝向的第-部分相互間隔的同心朝向的導電元件13 f B3中。參_ 4可以看出’一旦如圖中所示形成匹配關係，即在^ 第和第二組相互間隔的同心朝向的導電環導電元件⑽和導電元件⑽In the appliance, the conductive element and the electrical grounding element 71 can be selected and electrically grounded by Jtf L i , stainless steel, crane, etc.). Preferably, the conductive element _ 100 and the electric 氙 are grounded, formed. In order to form the electrically insulating layer 80, the surfaces of the conductive members 71 in contact with each other may be anodized. The anodizing treatment is - for the use of more than (4) W, the gold 4 can be made into a layer of oxidized protective layer. The anodizing treatment can be used to make the gold crucible into a hard coating, or the metal has an electrical extinction layer, as described in the series Sitr Cai __(9) is the Ming anode ground; the support ring 9g area is cultivated 71 Or the surface of the electrical ground 171 _ conductive support ring % is obtained by anodizing. Household = ^ In another embodiment of the invention, the conductive element touches the electrical ground element? ! = processing. Further, in other embodiments of the present invention, a plurality of conductive rings and channels 1〇2 in the member 100 may be anodized first toward the processing region or the junction plasma 2 region, and then A plasma rot, such as a coating-layer oxide (Y2〇3) material is used to further prevent plasma rot. In other embodiments of the present month, the electrically insulating layer 80 may be formed by applying an insulating coating via the contact surface of the conductive element or electrical ground element η. As another embodiment of the present invention, the electrical insulating layer 8G can be mechanically protected by an insulating spacer (paste) having the same function, and the electrically insulating spacer can make the conductive element brain and the electric milk ground 70 pieces 71 mutually. It can also be connected or supported as a connection when it is closed, so that the connection between the two is more stable. The electrically insulating spacers similarly energize the electrically conductive elements in a floating state. As another age-type of the present invention, the electrical component 丨(8) may also be formed of a conductive rotating body (4) holding an impurity, and the lion's lion can make the rotating material have various elements of electrical conductivity or The various elements are hybridized. Preferably, in the present embodiment, the conductive element 100 is formed of a germanium semiconductor material doped with a boron element or a nitrogen element. In the embodiment shown in FIG. 2 and FIG. 3, the conductive element 1 is formed by a plurality of conductive and U-rings 101 and a conductive branch ring 90, and a channel 1 is formed between the conductive concentric rings 1〇1. 2. As a modification of this embodiment, the conductive member should be a one-piece conductive plate (not shown) integrally formed. The conductive plate is disposed substantially annularly around the lower electrode 12b, and is disposed in the processing of the plasma t1 processing apparatus 1. Between the area 2 and the exhaust area 6, the conductive plate is provided with a through groove or through 13 200829088 = the shape of the rideway 1 〇 2 is torn. The size of the channel 1G2 is set such that the charged particles in the heterosome 4 pass through the channel 1G2 to neutralize the charged particles while allowing the neutral particles to pass. Referring to Figures 4 and 5, Figure 4 is a perspective view of another embodiment of the plasma confinement apparatus of the present invention. Fig. 5 is a plan view showing the mounting of the fourth riding plasma restraining device in the plasma processing device. As shown, the plasma confinement device (10) includes an electrical grounding element in which the electrically conductive element η has a non-defective edge ι2, an inner edge (1) opposite the outer rim m. In addition to this, the electrical grounding element m also has an upper surface m and a lower surface 115 opposite thereto. Further, in the electrical grounding member m, a right-handed passage ι 6 penetrating the upper surface 114 and the lower surface (1) thereof is formed. The foregoing is similar to 'the plasma confinement device 110 is placed between the processing region 2 of the plasma processing device (10) and the exhaust region 6 (as shown in FIG. 5), which is only partially shown in the figure, wherein the ion body The processing device is shown in Figure 5. Similar to the plasma confinement device 70 shown in FIGS. 2 and 3, the plasma confinement device 11G of the present embodiment includes an electrically insulating layer (10), which is only partially shown in the FIG. The upper surface m of 111 has an at least partial covering relationship. The first-part (or first group) of mutually spaced, concentrically oriented conductive elements (10) disposed on the electrically insulating layer 120. As shown in Figs. 4 and 5®, the first-part group---the core-oriented conductive members 130 are concentric rings, which are arranged at a predetermined interval. The conductive members (10) spaced apart from each other have a social edge 131, and a lower edge 132 opposite the upper edge/port 131. The mutually spaced concentrically oriented elements have a plurality of 33 channels 133 that can each accommodate a second portion of the conductive elements that will be detailed in subsequent paragraphs. Further, as shown in Fig. 4, a plurality of mutually spaced zigzag regions 134 are formed on the upper edges 131 of the mutually spaced concentrically oriented conductive members (10). Furthermore, it can be seen that a plurality of spaced apart concentrically oriented conductive elements (10) are positioned by a plurality of support elements at a predetermined spacing from the electrical ground elements 111. The plurality of support members W are electrically insulated from each other by the electrically insulating layer 120 and the electrical grounding tree m. Therefore, the first-part (or the _-group) phase-spaced conductive element (10) and the electrical ground element (1) are in a predetermined mutual relationship ' and are in a floating state with respect to the plasma processing apparatus. 200829088 As shown in Fig. 4, the plasma confinement device 11 has a second portion (or a second mutually spaced concentrically oriented conductive element (or ring) (10) that mates with the first electrical ring of the conductive element (10). In the following, it will be mentioned that there are a number of two paths 133 between the first or second group of conductive elements or rings, and Wei Xiangcai is set to pass the ship's (3) = grain = allow the electrically neutral particles to pass through 1 Considering that the second portion or group of mutually spaced turns, the member 140 has an upper edge 14b and a lower edge 142 opposite thereto. A portion of the lower edge 142 of the parent ring should be mounted corresponding thereto - the group of support members 135 are in contact, or the first group of scales are mutually integrated __ towards the turn along the Β 2 into a body. As can be clearly seen in Figure 5, the second group of concentric directions - each other 13⁄4 Stretching support members 143, the mutually spaced apart loops of the read members 14 are in substantially fixed relative positions. In the first description, each of the support members 143 can be attached to the upper edge 131. Matching the saw _& field m of the mutual interval. As shown in Fig. 4, a plurality of channels 144 are formed between the conductive elements (10) corresponding to each other and lying down. The channel 144 _ or the ruler is located to allow the corresponding mutually spaced concentrically oriented rings to be provided. ^ Nested and placed in concentrically oriented conductive elements 13 f B3 spaced apart from each other by concentrically oriented first-parts. See _ 4 to see 'once the matching relationship is formed as shown in the figure, ie in ^ and a second set of mutually spaced concentrically oriented conductive ring conductive elements (10) and conductive elements (10)
If ϊγ個通道145。這些通道145，如前面曾經提過，各自的縱向尺寸都 破叹定為可中和通過所述通道的帶電粒子而允許電中性粒子通過。 ，從上述討論中可以得知，第-和第二個環是不接地的，並可以用金屬 製成，並對絲面進满極化歧，或者在進爾極域理後塗敷等 離子體抗腐钮塗層，例如氧化紀(AO3)塗層。與前一實施例中的導電元件 議的材料類似，其中所述金屬可以是銘、不銹鋼、僞中的一種或者多種， 或者也可以是其他可以雜製作所述第_和第二個_金屬材料或半導體 材料。在本實施方式中，所述第一和第二個環優選地由銘材料製成。其中 所述電氣絕騎120齡導電元件13G或者軌接地元件m的表面陽極 處理或者表面塗敷絕緣塗層而形成。 15 200829088 ·· 與前一實施例類似，其中所述導電元件130也可以由掺有雜質的半導 體材料形成，其中所述雜質為能夠使半導體材料導電的各種元素或者各種 兀素組合’優先地，在本實施方式中，所述導電元件13〇由摻雜有硼元素 或氮元素的矽半導體材料形成。 ’ 本發明的等離子約束裝置因為具有形成有若干個通道的導電元件，因 此能夠將通顧述通道鱗電粒子巾和，從祕止了大部分崎電粒子逃 逸或浪_職處職，基本触了錢_域料離子體的二次放 電問題’同時也提高了處理區域内等離子體的利用率。此外，由於本發明 的等離子約束裝置有位於所科電元件下方並與之魏緣的電氣接地 讀’從而為等離子體處理區域提供了電場遮罩，進而更加有效地將可能 浪漏到等離子體處_料的帶餘子遮罩在處賴域之内，這也就進一 步地防止了轉子體在處題域外的二:欠放電，改善了等離子體在處理區 域内的利用率，並極佳地防止了等離子體對腔體可能造成的污染。 …本發賴說的獅子體處理裝置包括·製造轉片、平面顯示 器或者液晶顯示器的使用等離子體處理半導體基片的各種設備，例如，等 離子體處理的沉積設備、等離子體餘刻設備等。 本發明還涉及-種將等軒體關在等離子體處理裝置的處理區域中 的方法。所述方法包括以下步驛: φ 第步驟’提供一個如第5圖所示的等離子體處理腔117，所述等離子 處理Jk 117具有接收並處理半導體工藝件的處理區域以及與所述處理區域 相貫通的排氣區域； 第一步驟，在等離子體處理裝置的處理區域和排氣區域之間，提供並 ^有如標號71或m所示的電驗地元件，並且摘述電祕地元件上 提供並放置有如標號⑽或13G與⑽所示稱電元件，其中所述導電元 件與電氣接地元件之間相互電絕緣； 广第二步驟，形成如標號102和144的若干個通道，以使被用過的反應 氣體及剎產Μ氣體能夠從等離子體處理裝置的處理區域到達排氣區域。 嫌其中第二步驟所述的若干個通道的縱向尺寸為可中和通過所述通道的 帶電粒子而允許電中性粒子通過所需的尺寸大小。 16 200829088 ** 此外，在上述方法中的所述第二步射的導電元件與電氣接地元件之 間相互電絕緣的方法是，還包含這—步驟，分別在電氣接地元件71或出， 和導電元件如1〇〇或13〇和14〇之間，提供並放置—個如標號8〇或12〇的 電乳絕緣層。其中在如第2圖或第4圖的實施例子中，所述第二步的導電 讀與電氣接地it件之間相互電絕緣的方法包含—個步驟，提供一個可以 通過電氣絕緣的隔塊（未圖示）來實現，從而使魏接地元件7’丨和導電元 件10=之間保持電絕緣。其中在如第3圖和第4圖的實施例中，一個導電 支撐環使導電元件1GG和電紐地元件71之間彌電絕緣。 另外，如前所述，本發明中的方法還包括對如1〇〇、13〇或14〇的導電 • 元件進行陽極化處理的步驟，或利用抗等離子體腐姓的材料進行塗層處理 的步驟。所驗層為抗等離子體雜的塗層，例如包括如氧化記(秘曰 層。 其中，提供並放置導電元件的步驟還包括另一步驟，提供若干個相互 間隔的’整體同心的導電環或⑽和⑽，相互之間以聽確定的相 互間隔排列。進一步地，提供並放置導電元件的步驟，在發明的另一形式 中，也可能包含提供導電板，以及在導電板上開槽或打孔的步驟。如第4 P和第5圖所示，提供並放置導電元件的步驟也可能還包括提 部 導電το件130，提供匹配的第二部分導電元件14()，並裝人第分，其中 • 在第一和第二部分之間形成若干個通道145。在如第5圖所示的裝置中二、提 供第-和第二部分導電元件13〇和14〇的步驟，還包括提供第一和第二组 =互間隔的同心朝向的，可以互相匹配嵌入的環。另外，在當前方法中， 提供第-和第二組相賴隔的_朝向的導電環的步驟，還包括製作金屬 製的（如銘製的）第-和第二組相互間隔的同心朝向的導f：環；並在製作 好後、’對第-和第二組相互間隔的同心朝向的導電環進行陽極化處理。 以上介紹的健是基於本發明的幾個較佳實施例，並不能以此來限定 =明，圍。任何對本發_裝置作本技術躺嶋知的部件的替換、 組合、分立’以及對本發明實施步驟作本技術躺内熟知的制改變或替 換均不超出本發明的揭露以及保護範圍。 17 200829088 【圖式簡單說明】 =圖：她她_儀嫩賴爾繼的結構示意 士叫厂/m雕卞體約束裝置的局部放大圖； ^發崎離^體約綠置㈣_種實施働立體分解圖； |。目所述輯子體約錢置絲轉離子體處魏置中的局部 =發明等離子體約束裝置的-種實施例的剖面 圖所述等離子體約束裝置的局部放大圖； 弟4圖疋本發明望魅工艘丛土# _ . _ 第5圖 剖面圖 【主要元件符號說明】If ϊ γ channels 145. These channels 145, as previously mentioned, each have a longitudinal dimension that is determined to neutralize charged particles passing through the channels to allow passage of electrically neutral particles. It can be known from the above discussion that the first and second rings are ungrounded and can be made of metal, and the surface of the wire is filled with polarization, or the plasma is coated after the pole is processed. Anti-corrosion button coating, such as oxidized (AO3) coating. Similar to the material of the conductive element in the previous embodiment, wherein the metal may be one or more of Ming, stainless steel, and pseudo, or may be other materials that can be made of the first and second metal materials. Or semiconductor material. In the present embodiment, the first and second rings are preferably made of inscription material. Wherein the surface of the 120-inch conductive element 13G or the rail grounding element m is anodically treated or surface-coated with an insulating coating. 15 200829088 - similar to the previous embodiment, wherein the conductive element 130 may also be formed of a semiconductor material doped with impurities, wherein the impurities are various elements or various halogen combinations capable of making the semiconductor material conductive, 'preferentially, In the present embodiment, the conductive element 13 is formed of a germanium semiconductor material doped with a boron element or a nitrogen element. Since the plasma confinement device of the present invention has a conductive member formed with a plurality of channels, it is possible to pass through the channel-scale electric particle towel and to prevent most of the electric particles from escaping or wave. The problem of secondary discharge of money_domain ion bodies also increases the utilization of plasma in the processing area. In addition, since the plasma confinement device of the present invention has an electrical grounding read under the electrical component and with the germane edge, thereby providing an electric field mask for the plasma processing region, thereby more effectively leaking to the plasma The residual mask of the material is in the area of the landscaping, which further prevents the rotor body from being outside the domain of the problem: under-discharge, improving the utilization of the plasma in the processing area, and excellently The possible contamination of the cavity by the plasma is prevented. The lion body processing apparatus of the present invention includes various devices for manufacturing a semiconductor substrate using a plasma, a flat display or a liquid crystal display, for example, a plasma processing deposition apparatus, a plasma residual apparatus, or the like. The present invention also relates to a method of shutting a body into a processing region of a plasma processing apparatus. The method comprises the steps of: φ the first step of providing a plasma processing chamber 117 as shown in Fig. 5, the plasma processing Jk 117 having a processing region for receiving and processing a semiconductor process member and with the processing region a through-flow region; a first step, between the processing region and the exhaust region of the plasma processing apparatus, providing an electrical ground component as indicated by reference numeral 71 or m, and providing a summary on the electrical component And placed with electrical components as indicated by reference numerals (10) or 13G and (10), wherein the conductive elements and the electrical grounding elements are electrically insulated from each other; in a second step, a plurality of channels, such as numerals 102 and 144, are formed for use. The passing reaction gas and the brake gas can reach the exhaust region from the processing region of the plasma processing apparatus. The longitudinal dimension of the plurality of channels described in the second step is such that the charged particles passing through the channels are allowed to pass through the desired size of the electrically neutral particles. 16 200829088 ** In addition, the method of electrically insulating the electrically conductive element and the electrical grounding element of the second step in the above method is further comprising the steps of: respectively, electrically discharging the electrical grounding element 71, and conducting An element such as 1 〇〇 or 13 〇 and 14 , is provided and placed with an electric insulating layer such as 8 〇 or 12 。. Wherein in the embodiment as shown in FIG. 2 or FIG. 4, the method of electrically insulating the electrically conductive read and the electrical grounding member of the second step comprises a step of providing a spacer which can be electrically insulated ( Not shown) is implemented to maintain electrical insulation between the Wei grounding element 7'丨 and the conductive element 10=. In the embodiment as shown in Figs. 3 and 4, an electrically conductive support ring electrically insulates between the electrically conductive element 1GG and the electrically grounded element 71. In addition, as described above, the method of the present invention further includes the step of anodizing a conductive element such as 1 〇〇, 13 〇 or 14 ,, or coating with a material resistant to plasma rot. step. The layer to be treated is a plasma-resistant coating, for example comprising, for example, an oxidation layer. The step of providing and placing the conductive element further comprises the further step of providing a plurality of mutually spaced 'integral concentric conductive rings or (10) and (10) are arranged at a mutual interval with each other in a certain sense. Further, the step of providing and placing a conductive member, in another form of the invention, may also include providing a conductive plate, and grooving or hitting the conductive plate The steps of the holes. As shown in Figures 4P and 5, the step of providing and placing the conductive elements may also include a lift conductive member 130, providing a matching second partial conductive member 14(), and loading the first Wherein: a plurality of channels 145 are formed between the first and second portions. In the apparatus as shown in Figure 5, the steps of providing the first and second portions of the conductive elements 13A and 14A, further comprising providing The first and second groups = mutually spaced concentrically oriented, can mutually match the embedded ring. Additionally, in the current method, the steps of providing the first and second sets of spaced-apart conductive rings, including Metal The first and second sets of mutually concentrically oriented guides f: rings; and, after fabrication, are anodized to the first and second sets of mutually concentrically oriented conductive rings. The above description is based on several preferred embodiments of the present invention and is not intended to be limiting, any substitution, combination, and separation of the components of the present invention. The steps of the present invention are not limited to the disclosure and protection of the present invention. 17 200829088 [Simple description of the figure] = Picture: Her and her _Nen Nair's structure is called the factory / Partial enlargement of the m-shaped body restraint device; ^ 崎崎离^体的绿置(四) _ species implementation 働 stereo exploded view; |. The mesh body of the book is about the local part of the Wei settling body = Partial enlarged view of the plasma confinement device of the embodiment of the inventive plasma confinement device; 弟4图疋 The invention of the enchanting work ship plexus # _ . _ Fig. 5 sectional view [main component symbol Description]
1 馨馨鲁_ •.審 •等離子體處理裝置 2 ·參鲁藝· ·.參 •處理區域 4 ·····... •等離子體 6參馨《馨•馨 排氣區域 11 ·····... •處理腔體 .......... ••上電極 12b ······ · ••下電極 14a、14b..... 70、110 _ · · · · • ••射頻電源 •等離子體約束裝置 7卜 111 · · · · · 電氣接地元件 72 、 91 · · · · · · • · ·外邊緣 73 、 92 、 113 · · · · • · · ••内邊緣 74 、 114 · · · · · 上表面 75 、 115 · · · _ · 下表面 76、102、116、133、 144、145 · · ·通道 80 、 120 ..... • · · ·電氣絕緣層 90....... 100、130、140 · · ·······導電元件 101 ······ · 112....... 18 2008290881 馨馨鲁_ •. 验• Plasma treatment unit 2 · 参 鲁 艺 · · 参 · Processing area 4 ·····... • Plasma 6 ginxin “Xin • Xin exhaust area 11 ·· ···... •Processing chamber..........••Upper electrode 12b ·······•• Lower electrode 14a, 14b..... 70,110 _ · · · · • • • RF power supply • Plasma confinement device 7 · · · · · Electrical grounding elements 72, 91 · · · · · · · · · Outer edges 73, 92, 113 · · · · · · · • Inner edges 74, 114 · · · · · Upper surface 75, 115 · · · _ · Lower surface 76, 102, 116, 133, 144, 145 · · · Channels 80, 120 ..... • · · · Electrical Insulation Layer 90....... 100, 130, 140 · · ·······Conductive Element 101 ········ 112....... 18 200829088
117 ·········等離子處理腔 131、 141 · ......••上邊沿 132、 142 ·········下邊沿 134 ·········鋸齒狀區域 135、14 ·········支撐元件117 ··································································································· ·Zigzag areas 135, 14 ·········Support components
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