TW200825385A - Structure of ultraviolet ray sensor - Google Patents

Structure of ultraviolet ray sensor Download PDF

Info

Publication number
TW200825385A
TW200825385A TW95147350A TW95147350A TW200825385A TW 200825385 A TW200825385 A TW 200825385A TW 95147350 A TW95147350 A TW 95147350A TW 95147350 A TW95147350 A TW 95147350A TW 200825385 A TW200825385 A TW 200825385A
Authority
TW
Taiwan
Prior art keywords
layer
ultraviolet
light
electrode layer
ultraviolet sensor
Prior art date
Application number
TW95147350A
Other languages
Chinese (zh)
Other versions
TWI312408B (en
Inventor
Jiun-Yuan Li
Original Assignee
Ghitron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ghitron Technology Inc filed Critical Ghitron Technology Inc
Priority to TW95147350A priority Critical patent/TW200825385A/en
Publication of TW200825385A publication Critical patent/TW200825385A/en
Application granted granted Critical
Publication of TWI312408B publication Critical patent/TWI312408B/zh

Links

Abstract

A structure of an ultraviolet ray sensor is to form an ultraviolet ray photo-sensing layer, a first electrode layer and a second electrode layer on the surface of a substrate main body. The ultraviolet ray photo-sensing layer is used to receive the external ultraviolet rays; the first and second electrode layers are staggered oppositely to be a comb structure; and surfaces of the ultraviolet ray photo-sensing layer, the first and second electrode layers are further formed with a transparent protection layer, which is used as the protection layer of the ultraviolet ray photo-sensing layer.

Description

V 200825385 九、發明說明: 【發明所屬孓技術領域】 特別是關於一種紫 麥明係關於一種紫外線感測器 外線感測器之結構。 【先前技術】 查目前科技產業發達,在我們曰常生活中,為了 常會用到感測器,從工廠的物品數量 π 口口貝測试,到 二,生活:冷氣的溫度測試(感溫)、電視的遙控器等,感測 為之應用範圍與用途是非常廣泛的。 么在眾多種類之感測器巾,光感測器是非常普遍的,其 係利用光敏元件將光訊號轉換為電訊號的感測器,铁而, ^觀目前常用綠元件的感應波長在可見光波長附近,如 :外線波長和紅外線波長,i光感測器不只是應用於光的 1測,更常用作為探測性元件,以組成其他類型的感測器。 π而目前典型的光感測器有紅外線感測器、紫外線感測 态、光纖感測器、色彩感測器、CCD圖像感測器等,近年 來,由於新需求的出現,紫外線探測引起了人們的極大關 2,不論是民生及軍用產業都需要有更好的紫外線探測儀 乂用方;引擎控制、太陽紫外線監測、光源校正、紫外 光天文學、火焰感測器、導彈羽流檢測以及空對空安全通 L寺應用。 备、外線感測器是一種專門用來檢測紫外線的光電元 件’他對紫外線特別敏感,尤其對木材、化纖織物、紙張、 200825385 油類、塑膠橡料和可然氣體等燃燒時產生的紫外線以及太 陽光經大氣層到達地面的紫外線反應特別強列,而常見之 i外線感測器又分為光激發電子型、阻抗型...等。 【發明内容】 本發明所欲解決之技術問題:V 200825385 IX. Description of the invention: [Technical field of invention] In particular, it relates to a structure of an ultraviolet sensor external line sensor of a purple wheat system. [Prior technology] Check that the current technology industry is developed. In our daily life, in order to use the sensor, the number of items from the factory is π mouth and mouth test, to the second, life: temperature test of air-conditioning (temperature sensing) The remote control of the TV, etc., is widely used for sensing applications and applications. In many types of sensor wipes, light sensors are very common, which use photosensitive elements to convert optical signals into electrical signals, iron, and the current sensing wavelength of commonly used green components is visible light. Near the wavelength, such as: external wavelength and infrared wavelength, i-light sensor is not only used for light measurement, but also used as a detector element to form other types of sensors. π Currently, typical photo sensors include infrared sensors, ultraviolet sensing states, fiber optic sensors, color sensors, CCD image sensors, etc. In recent years, due to the emergence of new demands, UV detection has caused People's great concern 2, both the people's livelihood and the military industry need better UV detectors; engine control, solar ultraviolet monitoring, light source correction, ultraviolet astronomy, flame sensor, missile plume detection and Air-to-air safety pass L Temple application. The external and external line sensor is a kind of photoelectric element specially used for detecting ultraviolet rays. He is particularly sensitive to ultraviolet rays, especially ultraviolet rays generated when burning wood, chemical fiber fabric, paper, 200825385 oil, plastic rubber and corona gas. The ultraviolet light that reaches the ground through the atmosphere is particularly strong, and the common external line sensor is divided into photo-excited electronic type, impedance type, and so on. SUMMARY OF THE INVENTION The technical problem to be solved by the present invention is as follows:

查目m €用之紫外線感測器大都係利用感光層接觸 正、負電極而形成電流迴路’以感測外界紫外線之強弱, 然=綜觀許多紫外線感測器皆係將感光層直接暴露於外 界核境中’如此不僅會使感光層本身之元件特性容易受到 外界溫度、澄度、氧氣及臭氧...等環境m素影響之外,亦 會因此減短該紫外線感測器之使用壽命。 然而,阻抗型之紫外線感測器係利用感光層之阻抗變 化而測得其所接收之紫外線強度,但綜觀目前市面上之紫 外線感測器皆無法有效改善m本身對於紫外線以外的 干擾如可見光、紅外光及水氣干擾等等。 緣此, 、再者,雖然目前市面上已有部分之紫外線感測器為了 避免感先層本身之元件祕㈣外界環境因素之影變而改 ,:因而在感光層上配置有一保護層,但此種紫外:感測 以係將保㈣以封裝之製成方式配置於該感光層上,以 達到保護作用’但此種封裝製程手續實在過於繁複,因此 會造成紫外線❹m製作上之不便,製造成本也高居不 下’感測器的體積也因此增加,造成使用上的障礙。 一種具有透光保護 本發明之主要目的即是提供 200825385 層之紫外線感測器,其係藉由該 紫外線感光叙保護層。 域^料感測器之 未發明之另-目的即是提供 藉由梳狀結構之第一、第—朽恩系外糾撕裔’其係 第一、笛弟一电極層而增加紫外線感光層與 層之购面積,以提高制11本身對於紫 卜、,泉感光層阻抗變化之靈敏度。 、/、 本《明之另-目的即是提供—種紫外線感測器 &供一保護層直接覆蓋於紫外線感光層與第—= 層之上方作為該感測器之料線感光叙賴層。电極 本發明解決問題之技術手段·· 本發明為解決f知技術之問題所採用之 供-種紫外線感測器之結構,係在—基材本體之表= :I外線感光層、一第一電極層及—第二電極層,爷紫 ^線感光層係用以接收外界之紫外線,該第胸 =電_料㈣之梳狀結構,且在該紫外線感光層。: 極層,該第二電極層之表面更形成有一透光保護 a以作為该紫外線感光層之保護層。 本發明之應用實施例中,該第一電極層與該第 層可同位於該基材本體與該紫外線感光層間、可 紫外線感光層與該透光保護層間,亦可㈣^ 體與該紫外線感光層間、以及該紫外以丄£…基材本 護層間。 31外線感光層與該透光保 7 200825385 本發明對照先前技術之功效: 相較於1現有技術,本發明之紫外線感測器係藉由透光 保4層來作為紫外線感光層之保護層,以避免該紫外線感 光層會因外界環境因素之影響而改變其本身之元件特性, 並ί曰加忒紫外線感測器之使用壽命,且該透光保護層之製 私相車又於習用技術係以簡易之塗佈方式形成,故可簡化其 製程之操作程序。 再者本發明係利用梳狀結構之第一、第二電極層而 〜加其與紫外線感光層之接觸面積,以提高該感測器本身 對於该紫外線感光層阻抗變化之靈敏度,因此展現本發明 極佳之商業附加價值。 电月所採用白勺具體貫施例,將藉由以下之實施例及 附王圖式作進一步之說明。 【實施方式】 • 明,閱第一圖所不,其係顯示本發明紫外線感測哭之 結構第一實施例之立體外觀圖。第二圖係顯示本發明紫外 線感測器之結構第一實施例之立體分解圖。如圖所示 紫外線感測器⑽包括有—基材本⑸、一第一電極層21: 一弟t電極層22、一紫外線感光層3及-透光保護層4。 ^ 極層21及該第二電極層22係形成於該基村 本肢i之表面’並位於[水平面,且該第—電 該第二電極層22係為對施、H 該第一電極層21更連接=亚第相互^錯排列之梳狀結構,而 接有—弟一導線51,該第二電極層22 200825385 連接有一第二導線52。 t明同%嘐閱第二圖所示,其係顯示第一圖中斷面 =斷面圖。如圖所示,該紫外線感光層3係形成於該第一 ^層21及該第二電極層22之表面,並接觸該基材本體! 之表面’且該紫料感光層3具有阻抗電性,以接收外界 某特定頻段之紫外線L’並以其所接收之紫外線^產生阻 抗變化。 該透光賴層4係形成於該第—電極層2ι、該第二電 ^ 22及该紫外線感光層3之表面,用以作為該紫外線感 、、田:、之保護層,以使該紫外線感光層3避免受到外界之 =太Γ度、氧氣及臭氧等環境因素而干擾該紫外線感光 層3本身之元件特性。 :透光保護層4更具有濾波之作用,其可藉由選擇添 ^同之材料’而使該紫外線感光層3接收不同頻段之紫 外綠。 !士椹^ 弟四圖所不’其係顯示本發明紫外線感測器之 =貫施例之斷面圖。如圖所示,該紫外線感測器職 匕-基材本體la、一第一電極層仏、一第二電極層 22a、一紫外線感光層3a及一透光保護層知。 且卞=外線感光層3a_成於該基材本體1&之表面, 頻光層有阻抗電性,並可接收外界某特定 收:紫外’且㈣外線感光層3&係依據其本身所接 之1外線L’而產生阻抗變化。 該第-電極層2la及該第二電極層瓜係形成於該紫 200825385 1感先層3a之表面’並接觸於該基材本體…且該第-a虽層24該第二電極層仏係位於同一水平面,並為相 列:梳狀結構(圖中未示),而該第一電極層^ 更連接有一第一導線51,該第—φ 導線52(圖中未示)。極層22a連接有-第二 4透光保4層4a係形成於該第—電極層21&、該 及該紫外線感光層3…面,用以作為該紫外 臾^層之保護層,以使該紫外線感光層3a避免受到外 川之溫度、沒度、氧氣及自气堂 感光層3a本身之元件特性Γ兄因素而干擾該紫外線 力不濩層更具有濾波之作用,其可藉由選擇添 外:而使該料線感光層3a接收不同頻段之紫 „五圖所示,其係顯示本發明紫外線感測器之 、勺。括Ϊ二貫施例之斷面圖。如圖所示,該紫外線感測器100b 包括有一基材本體lb、一第一帝托居,u 77h_,b L 弟屯極層21b、一第二電極層 ,、外線感光層3b及一透光保護層4b。 該第-電極層21b係形成於該基材本體b之表面,且 2:電_训係為梳狀結構(圖中未示)。該紫外線感 先曰允係形成於該基材本體lbA該第一電極層加之表 面且。亥I外線感光層3b具有阻抗電性,並可接收外界 之紫外線[,,且該紫外線感光層%係依據其:身 所接收之紫外線而產生阻抗變化。 而該第二電極層22b係形成於該紫外線感光層4b之表 10 200825385 接觸於該基材本體lb,且該第二 狀結構(圖中未示)。而哕干 曰 係為梳 導線5】,哕第—朽思 1"極層21b更連接有-第- 示)。極層細連接有-第二導線52(圖中未 二電^^^層/係形成於該紫外線感光们b及該第 以使4= 為該紫外線感先層3b之保護層,Most of the UV sensors used in the investigations are made by using the photosensitive layer to contact the positive and negative electrodes to form a current loop' to sense the intensity of the external ultraviolet light. However, many UV sensors expose the photosensitive layer directly to the outside world. In the nuclear environment, this will not only make the component characteristics of the photosensitive layer itself susceptible to environmental factors such as external temperature, stiffness, oxygen and ozone, but also shorten the service life of the UV sensor. However, the impedance type ultraviolet sensor measures the ultraviolet light intensity received by the change of the impedance of the photosensitive layer, but the ultraviolet sensor on the market currently cannot effectively improve the interference of m itself other than ultraviolet light, such as visible light. Infrared light and water vapor interference and so on. Therefore, in addition, although some UV sensors are currently available on the market in order to avoid the change of the component of the first layer itself (4) the external environmental factors change: therefore, a protective layer is disposed on the photosensitive layer, but Such ultraviolet: sensing is to be placed on the photosensitive layer in a packaged manner to achieve protection. However, such a packaging process is too complicated, which may cause inconvenience in the manufacture of ultraviolet rays. The cost is also high. The volume of the sensor is also increased, causing obstacles in use. A light-transmitting protection The main object of the present invention is to provide a UV-sensing sensor of the layer 200825385, which is protected by the ultraviolet ray. The invention of the domain sensor is not invented. The purpose is to provide an ultraviolet sensitization by the first and the first fascinating body of the comb structure. The purchase area of the layer and the layer is to improve the sensitivity of the system 11 itself to the change of the impedance of the photosensitive layer of the purple and the spring. / /, The "Ming of the other - the purpose is to provide a kind of UV sensor & a protective layer directly over the UV photosensitive layer and the -= layer as the sensor line of the photosensitive layer. Electrode The technical means for solving the problem of the present invention · The structure of the ultraviolet sensor for use in solving the problem of the prior art is based on the surface of the substrate body: : I external photosensitive layer, a first An electrode layer and a second electrode layer are used to receive ultraviolet rays from the outside, and the first chest is a comb-like structure of the electric material (four), and is in the ultraviolet photosensitive layer. : a pole layer, the surface of the second electrode layer is further formed with a light transmission protection a as a protective layer of the ultraviolet photosensitive layer. In an application example of the present invention, the first electrode layer and the first layer may be located between the substrate body and the ultraviolet photosensitive layer, between the ultraviolet light sensitive layer and the light transparent protective layer, or may be (4) and the ultraviolet light sensitive Between the layers, and the UV is between the substrate and the substrate. 31 external photosensitive layer and the transparent transmission 7 200825385 The present invention compares the efficacy of the prior art: Compared with the prior art, the ultraviolet sensor of the present invention serves as a protective layer of the ultraviolet photosensitive layer by transparently protecting 4 layers. To avoid the ultraviolet photosensitive layer changing its own component characteristics due to external environmental factors, and to increase the service life of the ultraviolet sensor, and the private phase car of the transparent protective layer is also in the conventional technology system. It is formed by simple coating method, which simplifies the operation procedure of the process. Furthermore, the present invention utilizes the first and second electrode layers of the comb structure and the contact area with the ultraviolet photosensitive layer to improve the sensitivity of the sensor itself to the impedance change of the ultraviolet photosensitive layer, thereby exhibiting the present invention. Excellent business added value. The specific examples used in the electricity month will be further explained by the following examples and the accompanying drawings. [Embodiment] It is to be understood that the first embodiment of the present invention is a three-dimensional appearance of the structure of the ultraviolet ray sensing crying of the present invention. The second drawing shows an exploded perspective view of the first embodiment of the structure of the ultraviolet sensor of the present invention. As shown in the figure, the ultraviolet sensor (10) includes a substrate (5), a first electrode layer 21: a t electrode layer 22, an ultraviolet photosensitive layer 3, and a light transmissive protective layer 4. The pole layer 21 and the second electrode layer 22 are formed on the surface of the base limb i of the base village and are located in the [horizontal plane, and the first electrode layer 22 is the opposite electrode layer. 21 is more connected = a sub-parallel arrangement of comb-like structures, and a second conductor layer 51 is connected to the second electrode layer 22 200825385. t Ming and 嘐% are shown in the second figure, which shows the section = section view in the first figure. As shown in the figure, the ultraviolet light-sensitive layer 3 is formed on the surfaces of the first layer 21 and the second electrode layer 22, and contacts the substrate body! The surface of the purple material photosensitive layer 3 is electrically resistive to receive ultraviolet rays L' of a specific frequency band of the outside and to generate an impedance change by the ultraviolet rays received therefrom. The light-transmitting layer 4 is formed on the surface of the first electrode layer 2, the second electrode 22 and the ultraviolet light-sensitive layer 3, and serves as a protective layer for the ultraviolet light, the field, and the ultraviolet light. The photosensitive layer 3 is prevented from interfering with the element characteristics of the ultraviolet photosensitive layer 3 itself by environmental factors such as excessive irration, oxygen, and ozone. The light-transmitting protective layer 4 has a filtering effect, and the ultraviolet light-sensitive photosensitive layer 3 can receive the ultraviolet green of different frequency bands by selecting the same material. !士椹^ The four diagrams of the brothers do not show the cross-sectional view of the ultraviolet sensor of the present invention. As shown in the figure, the ultraviolet sensor is a substrate body la, a first electrode layer, a second electrode layer 22a, an ultraviolet photosensitive layer 3a, and a light-transmissive protective layer. And 卞 = the outer line photosensitive layer 3a_ is formed on the surface of the substrate body 1 & the frequency layer has impedance electrical properties, and can receive a certain external receiving ultraviolet: and (4) the external photosensitive layer 3 & The outer line L' of 1 causes an impedance change. The first electrode layer 231a and the second electrode layer are formed on the surface of the purple layer 200825385 first layer 3a and are in contact with the substrate body... and the first-a layer 24 is the second electrode layer They are located on the same horizontal plane and are in a phase-like structure: a comb-like structure (not shown), and the first electrode layer is further connected with a first wire 51, the first-φ wire 52 (not shown). The second layer 4a is connected to the second electrode 4 layer 4a formed on the surface of the first electrode layer 21&, the ultraviolet light sensitive layer 3, and serves as a protective layer of the ultraviolet layer to enable The ultraviolet ray-sensitive layer 3a is protected from the temperature, the degree of oxygen, and the component characteristics of the gas-sensing layer 3a itself, and interferes with the ultraviolet ray-free layer to have a filtering effect, which can be selected by adding : The photosensitive layer 3a of the strand receives the purple color of different frequency bands, which is shown in the figure of the fifth embodiment, which is a cross-sectional view of the ultraviolet sensor of the present invention. The ultraviolet sensor 100b includes a substrate body lb, a first emperor, a u 77h_, b L dipole layer 21b, a second electrode layer, an outer photosensitive layer 3b and a light transmissive protective layer 4b. The first electrode layer 21b is formed on the surface of the substrate body b, and 2: the electric system is a comb structure (not shown). The ultraviolet ray is first formed on the substrate body lbA. An electrode layer is added to the surface and the outer photosensitive layer 3b of the outer layer has impedance electrical properties and can receive ultraviolet rays from the outside. [, and the ultraviolet light-sensitive photosensitive layer% is subjected to an impedance change according to the ultraviolet light received by the body. The second electrode layer 22b is formed on the ultraviolet light-sensitive photosensitive layer 4b, and the substrate 10b is contacted with the substrate body 1b. And the second structure (not shown), and the 哕 曰 is the comb wire 5], the 哕 — 朽 朽 & & & & 极 极 极 极 21 21 21 极 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Two wires 52 (not shown in the figure) are formed in the ultraviolet light sensitive b and the fourth layer is a protective layer of the ultraviolet light first layer 3b.

J氧=^3b避免受到外界之溫度、達度、氧氣 性料兄因素而干擾該紫外線感先層3b本身之元件特 該透光保護層4b更具有濾波之作用,其可藉由、天 =同之材料’而使該紫外線感光層^接收不同頻段之Ϊ έ 士禮六圖所示’其係、顯示本發明紫外線感測器之 :構:四貫施例之立體外觀圖。如圖所示,本實施例與第 、二把例之差異係、在於該透光保護層&係為—局部之透光 視窗’、且其大小、形狀亦可依據該紫外線感測H 1·之應 用領域不同而有所改變。 /經由上述實施例可知,在本發明中,該基材本體丨、 係為玻璃、或陶£之—,且其製成材料亦可依據該感測 m 0 100a、l〇〇b、100C之應用領域而使用其他適合之材 料。 。亥第包極層21、21 a、21 b可為正極電極層,該第二 電極層22、22a、22b可為負極電極層,且該第一電極層21、 21a、21b更可依據該紫外線感測器100、l〇〇a、100b、100c 200825385 之需求不同而改變為負極電極層’該第二電極I 22、22a、 22b亦可改變為正極電極層。該第—導線5i及該第二導線 52係為導電材料,且該第—導線51及該第二導線η可分 別依據該第-電極層W、21a、21b及該第二電極層 22b之正、負極性而改變其本身之導電極性。 該透光保護層4、4a、4b可為高分子材料(例如壓克 力、,聚丙稀碳酸_、聚乙稀、聚丙烯.·.等)、石夕膠或玻璃等 透光材料’而其製成材料更可依據該紫外線感測器100、 l〇〇a lGGb、lGGe之應用領域而使用其他適合之材料。 該透光保護層4、4a、4b形成於該第一電極層2卜2U、 训、第二電極層22、22a、22b及該紫外線感光層3、3a、 3b表面,方法可為網印塗佈、浸潰塗佈、注射塗佈或旋轉 塗佈…等,其更可依據該紫外線感測器100、l〇〇a、1()%、 100c之應用領域而使用其他合適之方法。 在實際應用時,該第一電極層21、21a、21b與該第二 WM22、22a、22b^^^^Ml、la、ib_ 兔外線感光層3、3a、3b間、可同位於該紫外線感光層3、 %、3b與該透光保護層4、如、朴、4(間,亦可分別位於 。亥基材本體1、la、lb與該紫外線感光層3、允、%間、以 及該紫外線感光層3、3a、3b與該透光保護層4、如、仆、 乜間。且該第一電極層21、21a、21b與該第二電極層u、 22a、22b之結構亦可依據該紫外線感測器〗〇〇、〗〇〇a、牝、 100c之應用領域而使用其他合適之形狀,如平板結構等。 藉由上述之本發明實施例可知,本發明確具商業上之 12 200825385 施例說明而作其它種種之改良及變化。然 明實施例所作的種種改良及變化,當仍屬 精神及界定之專利範圍内。 利用價值。惟以上之實施例說明,.僅為本發明之第一具體 實施例說明‘,凡習於此項技術者當可依據本發明之上述實 而這些依據本發 於本發明之發明 【圖式簡單說明】J oxygen = ^ 3b to avoid the external temperature, the degree of reach, the oxygen-induced material brothers interfere with the ultraviolet ray first layer 3b itself, the light-transmissive protective layer 4b has a filtering effect, which can be used, day = The same material 'and the ultraviolet light-sensitive layer ^ receives different frequency bands έ 礼 礼 六 图 图 ' ' ' ' ' ' ' ' ' ' ' ' ' ' 。 。 。 。 。 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线 紫外线As shown in the figure, the difference between the embodiment and the second and second examples is that the light-transmissive protective layer & is a partial light-transmitting window, and the size and shape thereof can also be based on the ultraviolet sensing H 1 · The application areas vary and vary. According to the above embodiment, in the present invention, the substrate body is made of glass or ceramic, and the material thereof can also be based on the sensing of m 0 100a, l〇〇b, 100C. Use other suitable materials for the application field. . The second electrode layer 21, 21a, 21b may be a positive electrode layer, the second electrode layer 22, 22a, 22b may be a negative electrode layer, and the first electrode layer 21, 21a, 21b may further be based on the ultraviolet The requirements of the sensors 100, 10a, 100b, 100c 200825385 are changed to the negative electrode layer 'the second electrode I 22, 22a, 22b can also be changed to the positive electrode layer. The first wire 5i and the second wire 52 are electrically conductive materials, and the first wire 51 and the second wire η can be positive according to the first electrode layer W, 21a, 21b and the second electrode layer 22b, respectively. The negative polarity changes its own conductivity polarity. The light-transmissive protective layer 4, 4a, 4b may be a high-molecular material (for example, acrylic, polypropylene carbonate, polyethylene, polypropylene, etc.), or a light-transmitting material such as glass or glass. The material to be made can use other suitable materials according to the application fields of the ultraviolet sensor 100, l〇〇a lGGb, and lGGe. The transparent protective layer 4, 4a, 4b is formed on the surface of the first electrode layer 2, the second electrode layer 22, 22a, 22b and the ultraviolet photosensitive layer 3, 3a, 3b, and the method can be screen printing Cloth, dip coating, injection coating or spin coating, etc., may further use other suitable methods depending on the application field of the ultraviolet sensor 100, l〇〇a, 1 ()%, 100c. In practical applications, the first electrode layer 21, 21a, 21b and the second WM22, 22a, 22b^^^^Ml, la, ib_ rabbit outer line photosensitive layer 3, 3a, 3b may be located in the ultraviolet light sensitive The layers 3, %, 3b and the light transmissive protective layer 4, such as Pak, 4, may also be located respectively. The substrate body 1, la, lb and the ultraviolet photosensitive layer 3, between, %, and The ultraviolet light-sensitive layer 3, 3a, 3b and the light-transmissive protective layer 4, such as a servant, and the second electrode layer 21, 21a, 21b and the second electrode layer u, 22a, 22b may also be The UV sensor 〇〇, 〇〇 牝 a, 牝, 100c uses other suitable shapes, such as a flat structure, etc. As can be seen from the above embodiments of the present invention, the present invention is commercially available. 200825385 The following examples illustrate various modifications and variations of the present invention. The various modifications and variations of the embodiments are still within the scope of the spirit and the scope of the definition. The value of the application is only the present invention. The first specific embodiment illustrates that any person skilled in the art can be based on the present invention. Solid which occurs in accordance with the present invention, the present invention] [Brief Description of the drawings

第一圖係顯示本發明紫外線感測器之結構第 體外觀圖; 實施例之立 第二圖係顯示本發明紫外線感測器之結構第 體分解圖; 實施例之立 第三圖係顯示第一圖中3-3斷面之斷面圖; 第四圖係顯示本發明紫外線感測器之結構第 面圖; 二實施例之斷The first drawing shows the structure of the first embodiment of the ultraviolet sensor of the present invention; the second figure of the embodiment shows the first exploded view of the structure of the ultraviolet sensor of the present invention; Figure 3-3 is a cross-sectional view of the section; the fourth figure shows the structure of the ultraviolet sensor of the present invention;

第五圖係顯示本發明紫外線感測器之結構第 面圖; 三實施例之斷 苐六圖係顯示本發明紫外線感測器之結構裳 再弟四實施例之立 體外觀圖。 【主要元件符號說明】 100、100a、100b、100c紫外線感測器 1、1 a、1 b 基材本體 21、 21a、21b 第一電極層 22、 22a、22b 第二電極層 200825385 3、 3a、3b 4、 4a、4b K 4c 51 52 L、L,、L,, 紫外線感光層 透光保護層 第一導線 第二導線 紫外線Fig. 5 is a plan view showing the structure of the ultraviolet sensor of the present invention; Fig. 6 is a perspective view showing the structure of the ultraviolet sensor of the present invention. [Description of main component symbols] 100, 100a, 100b, 100c ultraviolet sensor 1, 1 a, 1 b substrate body 21, 21a, 21b first electrode layer 22, 22a, 22b second electrode layer 200825385 3, 3a, 3b 4, 4a, 4b K 4c 51 52 L, L, L,, UV-sensitive layer, light-transmissive protective layer, first wire, second wire, ultraviolet light

1414

Claims (1)

200825385 十、申請專利範園: 】·二種紫外_㈣之結構,包括有: 一·基材本體; 電 基材本體之表面,且該第 極層係為一梳狀結構; 弟-電極層’形成於該基材本體之表面,並 極層位於间_ 士巫二 〇。亥弟電 、 尺千面,且該第二電極層係為一盥200825385 X. Application for Patent Park: 】·Two kinds of UV_(4) structures, including: 1. The substrate body; the surface of the electric substrate body, and the first layer is a comb structure; 'Formed on the surface of the substrate body, and the pole layer is located in the room. Haidi electric, tens of thousands of faces, and the second electrode layer is a 盥 一:電極層相對應’並相互交錯排列之梳狀結構… -紫夕卜線感光層,形成於該第一,極層與該第二電極居 之表面,用以接收外界之紫外線; 9 透光保濩層,其係形成於該紫外線感光層、第一電極 層、及該第二電極層之表面’用以作為該紫外線^光 層之保護層。 2·如申請範圍第1項所述之紫外線感测器之結構,其中該 透光保瘦層形成於該紫外線感光層與該電極層表面之方 法,係網印塗佈、浸潰塗佈、注射塗佈、旋轉塗佈之一。 3·如申請範圍第1項所述之紫外線感測器之結構,其中該 透光保護層係為高分子材料、矽膠、玻璃之一。 4·如申請範圍第3項所述之紫外線感測器之結構,其中該 高分子材料係為壓克力、聚丙烯碳酸酯、聚乙烯、聚丙 稀之一。 15 200825385 5·如申請範圍第i項所述之紫外線感測器之結構,其中1 第:一電極層係為導電材料,並連接有一第一導線。人 6·=申請㈣第1項所述之紫外線感測器之結構,其中該 第二電極層係為導電材料,並連接有一第二導線。^ • 7·如申請範圍第1項所述之紫外線感測器之結構,其㈣ 透光保護層係為一局部之透光視窗。 一種紫外線感測器之結構,包括有: 一基材本體; m光層,形成於該基材本體之表面,用以接收 外界之紫外線; 一成於該紫外線感光層之表面,且該第 V層係為一梳狀結構; 一第二電極層,形成於該 第-電極層位於同一水平面ttf之表面,亚與該 與該第一♦朽思 。Λ弟一電極層係為一 構;’極層相對應,並相互交錯排列之梳狀結 成於該紫外線感光層、第-電極層、 保護層。。層之表面’用以作為該紫外線感光層之 16 200825385 士申’範圍第8項所述之紫外線感測器之結構,其中兮 透光保護層形成於該紫外線感光層與該電極層表面之方 係,印塗佈、浸潰塗佈、注射塗佈、旋轉塗佈之一。 士申明範圍第8項所述之紫外線感測器之結構,其中兮 匕光保濩層係為高分子材料、石夕膝、玻璃之一。 _ 中請範圍第1G項所述之紫外線感測器之結構,其中^ 回分子材料係為壓克力、聚丙烯碳酸酯、聚乙 取Λ 烯之一。 ’來丙 申請範圍帛8項所述之紫外線感測器之結構,其初 第私極層係為導電材料,並連接有一第一導線。 人 13·^申4耗圍第8項所述之紫外線感測器之結構,其 • 帛二電極層係為導電材料,並連接有-第二導線。… 14·如申凊乾圍第8項所述之紫外線感測器之結構, 透光保護層係為-局部之透光視f。 b·—種紫外線感測器之結構,包括有: 一基材本體; —第-電極層’形成於該基材本體之表面,且 + 極層係為一梳狀結構; ^ ^ 17 200825385 極層及該基材本體之 光層之表面,且該第 一紫外線感光層,形成於該第—電 表面,|用以接收外界之紫外線; 一第二電極層,形成於該紫外線感 二電極層係為梳狀結構; 一透光保護層, 層之表面,用 係形成於該紫外線感光層及該第二電極 以作為該紫外線感光層之保護層。 如申請_第15項所述之紫外線感測器之結構, 透先保護層形成於該紫外線感光層與該第二電極層表面Λ 之方法,係網印塗佈、浸潰塗佈、注射塗佈、旋;塗 17·如申請範圍第15項所述之紫外線感測器之結構,其中該 透光保護層係為高分子材料、玻璃之一。 /、 =申请fell第17項所述之紫外線感測器之結構,其中$ 高分子材料係為壓克力、丙烯碳酸酯、聚丙烯之一 '。μ 19’如申請範圍第15項所述之紫外線感測器之結構,其中該 第~電極層係為導電材料,並連接有一第一導線。 2()·如申請範圍第15項所述之紫外線感測器之結構,其中該 第二電極層係為導電材料,並連接有一第二導線。 18 200825385 21.如申請範圍第15項所述之紫外線感测器之結構,其中該 透光保護層係為一局部之透光視窗。a: the electrode layer corresponds to the 'comb-like structure of the staggered arrangement... - the purple ray line photosensitive layer is formed on the surface of the first, the second layer and the second electrode for receiving external ultraviolet rays; The photoprotective layer is formed on the surface of the ultraviolet photosensitive layer, the first electrode layer, and the second electrode layer to serve as a protective layer for the ultraviolet light layer. 2. The structure of the ultraviolet sensor according to claim 1, wherein the transparent thin layer is formed on the ultraviolet photosensitive layer and the surface of the electrode layer, which is screen printing, dipping coating, One of injection coating and spin coating. 3. The structure of the ultraviolet sensor according to claim 1, wherein the light-transmissive protective layer is one of a polymer material, a silicone rubber, and a glass. 4. The structure of the ultraviolet sensor according to claim 3, wherein the polymer material is one of acrylic, polypropylene carbonate, polyethylene, and polypropylene. 15 200825385 5. The structure of the ultraviolet sensor according to item i of the application, wherein the first electrode layer is a conductive material and a first wire is connected. (4) The structure of the ultraviolet sensor according to Item 1, wherein the second electrode layer is a conductive material and is connected to a second wire. ^ • 7. The structure of the ultraviolet sensor as described in item 1 of the application scope, wherein (4) the light-transmissive protective layer is a partial light-transmitting window. A structure of a UV sensor, comprising: a substrate body; an m-light layer formed on a surface of the substrate body for receiving ultraviolet rays from the outside; a surface of the ultraviolet photosensitive layer, and the Vth The layer is a comb-like structure; a second electrode layer is formed on the surface of the first electrode layer at the same horizontal plane ttf, and the first and the first imaginary. The electrode layer of the brother-in-law is a structure; the hair layers corresponding to the pole layers are arranged in a staggered manner to form the ultraviolet light-sensitive layer, the first electrode layer, and the protective layer. . The surface of the layer is used as the ultraviolet sensor of the ultraviolet light-sensitive layer, wherein the light-transmitting protective layer is formed on the surface of the ultraviolet light-sensitive layer and the surface of the electrode layer. One of printing, dipping coating, injection coating, and spin coating. The structure of the ultraviolet sensor described in item 8 of the scope of the invention, wherein the 兮 匕 濩 濩 之一 layer is one of a polymer material, a stone knee, and a glass. _ The structure of the ultraviolet sensor described in the scope of the 1G item, wherein the molecular material is one of acrylic, polypropylene carbonate, and polyethylene. The structure of the ultraviolet sensor described in the application of pp. 8 is characterized in that the initial private layer is a conductive material and is connected to a first wire. The structure of the ultraviolet sensor described in Item 8 of the present invention is characterized in that the second electrode layer is made of a conductive material and is connected with a second wire. 14· As for the structure of the ultraviolet sensor described in Item 8 of Shenshangweiwei, the light-transmissive protective layer is a partial light-transmissive view f. The structure of the ultraviolet sensor includes: a substrate body; a first electrode layer formed on the surface of the substrate body, and the + pole layer is a comb structure; ^ ^ 17 200825385 a layer and a surface of the light layer of the substrate body, wherein the first ultraviolet light-sensitive layer is formed on the first electrical surface, to receive ultraviolet rays from the outside; and a second electrode layer is formed on the ultraviolet light-sensitive two-electrode layer The structure is a comb structure; a light transmissive protective layer, the surface of the layer is formed on the ultraviolet photosensitive layer and the second electrode as a protective layer of the ultraviolet photosensitive layer. The structure of the ultraviolet sensor according to claim 15, wherein the transparent protective layer is formed on the surface of the ultraviolet photosensitive layer and the second electrode layer, and is screen printing, dip coating, and injection coating. The structure of the ultraviolet sensor according to the fifteenth aspect of the invention, wherein the light-transmissive protective layer is one of a polymer material and a glass. /, = apply for the structure of the ultraviolet sensor described in item 17, wherein the polymer material is one of acrylic, propylene carbonate, and polypropylene. The structure of the ultraviolet sensor according to claim 15, wherein the first electrode layer is a conductive material and is connected to a first wire. 2) The structure of the ultraviolet sensor according to claim 15, wherein the second electrode layer is a conductive material and is connected to a second wire. The structure of the ultraviolet sensor of claim 15, wherein the light transmissive protective layer is a partially transparent window. 1919
TW95147350A 2006-12-15 2006-12-15 Structure of ultraviolet ray sensor TW200825385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95147350A TW200825385A (en) 2006-12-15 2006-12-15 Structure of ultraviolet ray sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95147350A TW200825385A (en) 2006-12-15 2006-12-15 Structure of ultraviolet ray sensor

Publications (2)

Publication Number Publication Date
TW200825385A true TW200825385A (en) 2008-06-16
TWI312408B TWI312408B (en) 2009-07-21

Family

ID=44771884

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95147350A TW200825385A (en) 2006-12-15 2006-12-15 Structure of ultraviolet ray sensor

Country Status (1)

Country Link
TW (1) TW200825385A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114597268A (en) * 2022-03-07 2022-06-07 中国科学院半导体研究所 Photoelectric detector and preparation method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807562B (en) 2017-04-28 2021-01-05 清华大学 Photoelectric detector and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114597268A (en) * 2022-03-07 2022-06-07 中国科学院半导体研究所 Photoelectric detector and preparation method thereof

Also Published As

Publication number Publication date
TWI312408B (en) 2009-07-21

Similar Documents

Publication Publication Date Title
US11150505B2 (en) Display panel and display device
Tsai et al. Band tunable microcavity perovskite artificial human photoreceptors
Kim et al. Wearable UV sensor based on carbon nanotube-coated cotton thread
US8294141B2 (en) Super sensitive UV detector using polymer functionalized nanobelts
US20150031158A1 (en) Integrated circuit and manufacturing method
CN106461388A (en) Detector for determining position of at least one object
CN109313120B (en) Humidity sensor and use thereof
US20210066396A1 (en) Self-powered organometallic halide perovskite photodetector with high detectivity
CN107078146A (en) Equipment for obtaining digital finger-print
Li et al. Achieving humidity-insensitive ammonia sensor based on Poly (3, 4-ethylene dioxythiophene): Poly (styrenesulfonate)
Song et al. Perovskite Solar Cell‐Gated Organic Electrochemical Transistors for Flexible Photodetectors with Ultrahigh Sensitivity and Fast Response
Saleem et al. Cu (II) 5, 10, 15, 20-tetrakis (4′-isopropylphenyl) porphyrin based surface-type resistive–capacitive multifunctional sensor
CN109326724B (en) Photosensitive sensor based on organic field effect transistor and preparation method thereof
KR20010068853A (en) Fingerprint recognition sensor and a manufacturing method thereof
TW200825385A (en) Structure of ultraviolet ray sensor
Patel et al. All‐Metal Oxide Transparent Photovoltaic for High‐Speed Binary UV Communication Window
CN109416279B (en) UV dosimeter with color change
Pu et al. A Flexible Sensitive Visible‐NIR Organic Photodetector with High Durability
TWI288234B (en) Multi-directional-absorbing ultraviolet sensor
Reissig et al. A differential photodetector: detecting light modulations using transient photocurrents
Bai et al. Advanced stretchable photodetectors: Strategies, materials and devices
JP2020531901A (en) Liquid crystal spatial light modulator
US20050179031A1 (en) Organic semiconductor photodetector
CN208736561U (en) A kind of anti-WIFI pyroelectric infrared sensor
CN101324465A (en) Multi-direction received ultraviolet ray sensor

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees