CN101324465A - Multi-direction received ultraviolet ray sensor - Google Patents
Multi-direction received ultraviolet ray sensor Download PDFInfo
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- CN101324465A CN101324465A CNA2007101084377A CN200710108437A CN101324465A CN 101324465 A CN101324465 A CN 101324465A CN A2007101084377 A CNA2007101084377 A CN A2007101084377A CN 200710108437 A CN200710108437 A CN 200710108437A CN 101324465 A CN101324465 A CN 101324465A
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Abstract
A multidirectional receiving UV sensor comprises a base material main body and a UV sensitive layer, wherein the UV sensitive layer includes a nanometer or micrometer particle powder sensitive material; the particle powder sensitive material is attached to the surface of the base material main body in a sintering process; the UV sensitive layer can receive the external UV ray from a plurality of directions and keep contact with a first electrode layer and a second electrode layer; and the first and the second electrode layers are arranged on the same horizontal plane on or below the UV sensitive layer or on different sides of the UV sensitive layer. When the UV sensitive layer receives external UV rays, the sensor can sense the intensity of the UV ray entering the sensor based on the impedance change of the UV sensitive layer.
Description
Technical field
The invention relates to a kind of UV sensor, particularly about a kind of UV sensor of multi-direction reception.
Background technology
Scientific and technological industry prosperity at present; in our daily life, for convenient regular meeting uses sensor, from number of articles calculating, the attribute test of factory; the temperature test (temperature-sensitive) of cold air, telepilot of TV etc. in the daily life, the range of application of sensor and purposes are very widely.
In the sensor of numerous kinds, optical sensor is very general, it is to utilize light activated element light signal to be converted to the sensor of electric signal, yet, the induction wavelength of taking a broad view of light activated element at present commonly used is near visible wavelength, and as ultraviolet wavelength and Infrared wavelength, and optical sensor just is not applied to the measurement of light, more commonly used as the property surveyed element, to form the sensor of other type.
And at present typical optical sensor has infrared ray sensor, UV sensor, Fibre Optical Sensor, color sensor, ccd image sensor etc., in recent years, because the appearance of new demand, ultraviolet detection has caused people's very big concern, no matter be that the people's livelihood and military estate all need better ultraviolet detection instrument, to be used for that engine control, solar ultraviolet monitoring, Light source correction, ultraviolet light uranology, flame sensor, guided missile plume detect and air to air application such as secure communication.
UV sensor is a kind of ultraviolet photovalve that is used for specially detecting, and he is responsive especially to ultraviolet ray, especially timber, chemical ﹠ blended fabric, paper, oils, plastics rubber material and the ultraviolet light that so produces during burning such as gas is reacted strong especially.
See also shown in Figure 1ly, it is the sectional drawing that shows existing UV sensor.As shown in the figure, this UV sensor 1 has a material main body 11, on this material main body 11, be formed with one first electrode layer 12, a photographic layer 13 and a second electrode lay 14 in regular turn, wherein, this first electrode layer 12 is to be a light transmission conductive layer, so that this photographic layer 13 can receive the ultraviolet L of extraneous irradiation, this photographic layer 13 is to be one deck P-type semiconductor film and the formation of one deck N-type semiconductor film storehouse.
First electrode layer 12, photographic layer 13 and this second electrode lay 14 of this UV sensor 1 is to form a current return, when this photographic layer 13 receives the ultraviolet L of extraneous irradiation is ejected electron, and form an electric current with the conducting of this second electrode lay 14 by this first electrode layer 12, and, can push away drawing the uitraviolet intensity that this sensor 1 is received by the current value power that measures this current return.
The technical matters that institute of the present invention desire solves:
Taking a broad view of existing UV sensor all is to utilize photographic layer to receive extraneous ultraviolet ray, but it mostly is to be the plane formula structure that its photographic layer receives extraneous ultraviolet surface, yet, the photographic layer of this kind structure only can have reaction preferably to the ultraviolet ray of single direction incident, its can't multi-direction reception by the ultraviolet ray of irradiation from all directions, and again because the plane formula structure can be because of the deviation of ultraviolet irradiating angle, and the ultraviolet ray that is incident to this photographic layer is produced reflection, thereby reduce the efficient that sensor receives ultraviolet ray.
Moreover the photographic layer of existing UV sensor mostly is to be the diode film, because its voltage withstand capability is very poor, thus very influence the voltage tolerance level of UV sensor, thereby shorten the serviceable life of UV sensor.
Summary of the invention
Therefore, fundamental purpose of the present invention promptly provides a kind of UV sensor of multi-direction reception, and it is by one with particulate powder photosensitive material formed UV-radiation-sensitive layer behind sintering process, and receives the ultraviolet ray by all directions incident.
Another object of the present invention promptly provides a kind of impedance type UV sensor, and it is to make through sintering process with particulate powder photosensitive material by one, and it is electrical to have an impedance.
Another object of the present invention promptly provides a kind of UV sensor that can be high voltage withstanding, and it is to make through sintering with particulate powder photosensitive material and form the UV-radiation-sensitive layer of granular structure by one, promotes the tolerance level of this UV sensor to voltage.
The technological means that the present invention deals with problems:
The present invention solves the UV sensor that the technological means that problem adopted of known technology provides a kind of multi-direction reception,, it is characterized in that it is to comprise in order to the ultraviolet ray in the sensing external world:
One material main body;
One UV-radiation-sensitive layer, be formed at the surface of this material main body, this UV-radiation-sensitive layer is to include particulate powder photosensitive material, and this particulate powder photosensitive material is after being coated on this material main body, with the surface of sintering process attached to this material main body, this UV-radiation-sensitive layer also has a predetermined initial impedance value, and this initial impedance value is to change with the ultraviolet intensity that receives;
One first electrode layer is the pre-position that is formed at this UV-radiation-sensitive layer of contact;
One the second electrode lay is the pre-position that is formed at this UV-radiation-sensitive layer of contact.
Wherein the structure of this UV-radiation-sensitive layer is for one of granular, bar-shaped, irregular.
Wherein this particulate powder photosensitive material be in wire mark after this material main body, with the surface of sintering process attached to this material main body.
Wherein this particulate powder photosensitive material is to include zinc oxide composition.
Wherein this particulate powder photosensitive material is to include the titania composition.
Wherein this particulate powder photosensitive material is to include the silit composition.
Wherein this particulate powder photosensitive material is to be added with solid in sintering process.
Wherein this solid is to be glass material.
Wherein this particulate powder photosensitive material is to be nanoparticle powder photosensitive material.
Wherein the particle diameter of this nanoparticle powder photosensitive material is less than 100 nanometers.
Wherein this particulate powder photosensitive material is a microparticles powder photosensitive material.
Wherein the particle diameter of this microparticles powder photosensitive material is less than 30 microns.
Wherein this first electrode layer is to be a conductive material.
Wherein this second electrode lay is to be a conductive material.
Wherein this first electrode layer is to be a corresponding pectination with the second electrode lay.
Wherein this material main body is to be one of glass, pottery.
Wherein this first electrode layer and this second electrode lay are the surfaces that is formed at this UV-radiation-sensitive layer, and are positioned at same surface level.
Wherein this first electrode layer and this second electrode lay are the surfaces that is formed at this material main body, and are positioned at same surface level, and by this UV-radiation-sensitive layer this first electrode layer and this second electrode lay are covered and to cover.
Wherein this first electrode layer is the heteropleural mutually that is formed at the UV-radiation-sensitive layer with this second electrode lay.
The present invention contrasts the effect of prior art:
Compared to prior art, UV sensor of the present invention is that multi-directionally receives the ultraviolet ray of extraneous incident by a UV-radiation-sensitive layer, its sensed layer that not only can solve existing UV sensor mostly only can have reaction preferably to the ultraviolet ray of single direction incident, and existing sensed layer can be because of the deviation of ultraviolet irradiating angle, and the ultraviolet ray that is incident to this photographic layer is produced reflection.In addition, this UV-radiation-sensitive layer is to form an impedance type UV sensor with nanometer or microparticles powder photosensitive material behind the coating sintering, electrically can be applicable to general circuit application by its impedance.And this impedance type UV sensor has preferable voltage tolerance level aspect circuit application, thereby shows splendid commercial surcharge.
Description of drawings
Specific embodiment of the present invention will be further described by following embodiment and the attached accompanying drawing that is, wherein:
Fig. 1 is the sectional drawing that shows existing UV sensor;
Fig. 2 is the stereo appearance figure that shows UV sensor first embodiment of the multi-direction reception of the present invention;
Fig. 3 is the sectional drawing of 3-3 section in the displayed map 2;
Fig. 4 is the sectional drawing that shows UV sensor second embodiment of the multi-direction reception of the present invention;
Fig. 5 is the sectional drawing that shows UV sensor the 3rd embodiment of the multi-direction reception of the present invention.
Embodiment
See also shown in Figure 2ly, it is the stereo appearance figure that shows UV sensor first embodiment of the multi-direction reception of the present invention.As shown in the figure, this UV sensor 100 includes a material main body 2, be formed with a UV-radiation-sensitive layer 3 on the surface of this material main body 2, wherein, this material main body 2 is to be one of glass or pottery, and it makes the material that material also can use other to be fit to according to the application of this sensor 100.
The initial impedance value that these UV-radiation-sensitive layer 3 tools one are scheduled to, and be formed with one first electrode layer 4 and a second electrode lay 5 on the surface of this UV-radiation-sensitive layer 3, so that this first electrode layer 4 and this second electrode lay 5 are contacted with this UV-radiation-sensitive layer 3, and be positioned at same surface level.
This first electrode layer 4 and this second electrode lay 5 are the pectinations for a correspondence, and the interlaced surface that is arranged in this UV-radiation-sensitive layer 3, it also can change its structure according to the application of this sensor 100, as slab construction etc., and this first electrode layer 4 and this second electrode lay 5 all are to be conductive material, so that this UV-radiation-sensitive layer 3, first electrode layer 4 and this second electrode lay 5 form a current return.
See also shown in Figure 3ly, it is the sectional drawing of 3-3 section in the displayed map 2.As shown in the figure, this UV-radiation-sensitive layer 3 is to include particulate powder photosensitive material, and this particulate powder photosensitive material is after being coated on this material main body 2, makes surface attached to this material main body 2 with sintering, and makes this UV-radiation-sensitive layer 3 can receive extraneous ultraviolet L.This particulate powder photosensitive material can be and contains zinc paste, titania or be arbitrary composition of silit, and it makes the material that material also can use other to be fit to according to the application of this sensor 100.And this particulate powder photosensitive material can be nanometer or microparticles powder photosensitive material, and wherein, the particle diameter of this nanoparticle powder photosensitive material can be less than 100 nanometers, and the particle diameter of this microparticles powder photosensitive material can be less than 30 microns.
Change because the resistance value of this UV-radiation-sensitive layer 3 is the intensity of the ultraviolet L that receives with it, promptly when more weak ultraviolet of these UV-radiation-sensitive layer 3 receiving intensities, its resistance value can oneself bigger initial impedance value reduce for this; And during stronger ultraviolet of these UV-radiation-sensitive layer 3 receiving intensities, it is littler that its resistance value can reduce to.At this moment, apply a voltage in 5 of this first electrode layer 4 and this second electrode lays, and after this first electrode layer 4, UV-radiation-sensitive layer 3 form current return with this second electrode lay 5, can change (its current value is that the resistance value with this UV-radiation-sensitive layer 3 changes) by the current value that measures this current return, and then learn the ultraviolet intensity of 100 sensings of this sensor.
See also shown in Figure 4ly, it is the sectional drawing that shows UV sensor second embodiment of the multi-direction reception of the present invention.As shown in the figure, the UV sensor 100a of present embodiment and the first embodiment difference are to be that this first electrode layer 4a and this second electrode lay 5a are the surfaces that is formed at this material main body 2a, and be positioned at same surface level, and by this UV-radiation-sensitive layer 3a this first electrode layer 4a and this second electrode lay 5a covered and to cover.
See also shown in Figure 5ly, it is the sectional drawing that shows UV sensor the 3rd embodiment of the multi-direction reception of the present invention.As shown in the figure, the UV sensor 100b of present embodiment and the second embodiment difference are to be that this first electrode layer 4b is the surface that is formed at this material main body 2a, and this second electrode lay 5b is the surface that is formed at this UV-radiation-sensitive layer 3b.
When practical application, this first electrode layer 4,4a, 4b and this second electrode lay 5,5a, 5b can be according to the application of this UV sensor 100,100a, 100b and demands and are changed its various formation position.And the granular structure of this UV-radiation- sensitive layer 3,3a, 3b can be according to the application of this UV sensor 100,100a, 100b changes to some extent, and is for example bar-shaped or be irregular etc.And this UV-radiation- sensitive layer 3,3a, 3b also can with this nanometer or micro-powder photosensitive material in wire mark after this material main body, with the surface of sintering process attached to this material main body.
In addition, all habit in this operator all known, this nanometer or micro-powder photosensitive material more can add suitable solid in sintering process, to increase the hardness of material itself, as adding an amount of glass material (glass dust) when the sintering process, this glass dust in 500 degree to 600 degree can with this nanometer or micro-powder photosensitive material bond, and have good then effect.And in nanometer or micro-powder photosensitive material, add suitable solid and more can change the engineering properties (as toughness, hardness, rigidity etc.) of this UV-radiation- sensitive layer 3,3a, 3b, and can not influence the ultraviolet receiving feature of UV-radiation-sensitive layer 3 of the present invention, 3a, 3b.
As seen from the above embodiment, UV sensor multi-directionally of the present invention receives the ultraviolet ray of incident, except solve existing UV sensor only can shortcoming to the ultraviolet ray of single direction incident reaction, the structure of the UV-radiation-sensitive layer of this UV sensor more can promote itself and the UV sensor tolerance level to pressure, thereby shows splendid commercial surcharge.
By the above-mentioned embodiment of the invention as can be known, the true tool coml of the present invention value.Only above embodiment explanation only is first specific embodiment explanation of the present invention, all habit in this operator when doing other all improvement and variation according to the above embodiment of the present invention explanation.Yet all improvement and variation that these are done according to the embodiment of the invention are in the claim that still belongs to invention spirit of the present invention and define.
Claims (19)
1. the UV sensor of a multi-direction reception, the ultraviolet ray in order to the sensing external world is characterized in that, it is to comprise:
One material main body;
One UV-radiation-sensitive layer, be formed at the surface of this material main body, this UV-radiation-sensitive layer is to include particulate powder photosensitive material, and this particulate powder photosensitive material is after being coated on this material main body, with the surface of sintering process attached to this material main body, this UV-radiation-sensitive layer also has a predetermined initial impedance value, and this initial impedance value is to change with the ultraviolet intensity that receives;
One first electrode layer is the pre-position that is formed at this UV-radiation-sensitive layer of contact;
One the second electrode lay is the pre-position that is formed at this UV-radiation-sensitive layer of contact.
2. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein the structure of this UV-radiation-sensitive layer is for one of granular, bar-shaped, irregular.
3. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this particulate powder photosensitive material be in wire mark after this material main body, with the surface of sintering process attached to this material main body.
4. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this particulate powder photosensitive material is to include zinc oxide composition.
5. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this particulate powder photosensitive material is to include the titania composition.
6. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this particulate powder photosensitive material is to include the silit composition.
7. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this particulate powder photosensitive material is to be added with solid in sintering process.
8. the UV sensor of multi-direction reception as claimed in claim 7 is characterized in that, wherein this solid is to be glass material.
9. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this particulate powder photosensitive material is to be nanoparticle powder photosensitive material.
10. the UV sensor of multi-direction reception as claimed in claim 9 is characterized in that, wherein the particle diameter of this nanoparticle powder photosensitive material is less than 100 nanometers.
11. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this particulate powder photosensitive material is a microparticles powder photosensitive material.
12. the UV sensor of multi-direction reception as claimed in claim 11 is characterized in that, wherein the particle diameter of this microparticles powder photosensitive material is less than 30 microns.
13. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this first electrode layer is to be a conductive material.
14. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this second electrode lay is to be a conductive material.
15. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this first electrode layer is to be a corresponding pectination with the second electrode lay.
16. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this material main body is to be one of glass, pottery.
17. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this first electrode layer and this second electrode lay are the surfaces that is formed at this UV-radiation-sensitive layer, and are positioned at same surface level.
18. the UV sensor of multi-direction reception as claimed in claim 1, it is characterized in that, wherein this first electrode layer and this second electrode lay are the surfaces that is formed at this material main body, and be positioned at same surface level, and by this UV-radiation-sensitive layer this first electrode layer and this second electrode lay covered and to cover.
19. the UV sensor of multi-direction reception as claimed in claim 1 is characterized in that, wherein this first electrode layer is the heteropleural mutually that is formed at the UV-radiation-sensitive layer with this second electrode lay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101084377A CN101324465A (en) | 2007-06-14 | 2007-06-14 | Multi-direction received ultraviolet ray sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101084377A CN101324465A (en) | 2007-06-14 | 2007-06-14 | Multi-direction received ultraviolet ray sensor |
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| CN101324465A true CN101324465A (en) | 2008-12-17 |
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| CNA2007101084377A Pending CN101324465A (en) | 2007-06-14 | 2007-06-14 | Multi-direction received ultraviolet ray sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103713472A (en) * | 2013-12-18 | 2014-04-09 | 合肥京东方光电科技有限公司 | System for automatically installing mask |
| CN103884423A (en) * | 2012-12-20 | 2014-06-25 | 国家纳米科学中心 | Zinc oxide/ reduced graphene oxide composite nanomaterial and preparation method thereof and ultraviolet light detector |
| CN108279496A (en) * | 2018-02-09 | 2018-07-13 | 京东方科技集团股份有限公司 | A kind of the eyeball tracking module and its method, video glass of video glass |
-
2007
- 2007-06-14 CN CNA2007101084377A patent/CN101324465A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103884423A (en) * | 2012-12-20 | 2014-06-25 | 国家纳米科学中心 | Zinc oxide/ reduced graphene oxide composite nanomaterial and preparation method thereof and ultraviolet light detector |
| CN103884423B (en) * | 2012-12-20 | 2016-01-20 | 国家纳米科学中心 | Zinc paste/redox graphene composite nano materials and preparation method thereof and ultraviolet light detector |
| CN103713472A (en) * | 2013-12-18 | 2014-04-09 | 合肥京东方光电科技有限公司 | System for automatically installing mask |
| CN108279496A (en) * | 2018-02-09 | 2018-07-13 | 京东方科技集团股份有限公司 | A kind of the eyeball tracking module and its method, video glass of video glass |
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Open date: 20081217 |