TW200824058A - Semiconductor element mounting member, semiconductor device, imaging device, light emitting diode constituting member, and light emitting diode - Google Patents

Abstract

A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles θ1, &thgr2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL). A light emitting diode component (LE2) includes a light emitting element (LE1) mounted on the main surface (21) of the insulative member (2) with the minimum size hole portion (11a) of the through-hole being filled with an electrically conductive material (33a), the light emitting element being sealed with a fluorescent material and/or a protective resin (FR). A light emitting diode (LE3) includes the light emitting diode component (LE2) mounted in a package (7).

Description

200824058 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to the simultaneous application of a plurality of plate-shaped insulating members

a V-made collective substrate; a semiconductor element mounting member formed by dividing the member of the collective substrate 3; an imaging device formed of the carrier member, a light-emitting diode, and a member formed of the light-emitting diode. Light-emitting diode. [Prior Art] In recent years, the demand for video components such as digital cameras and camera phones is rapidly expanding. The trend is that the number of pixels is large, and the number of pixels is the same as that of the camera. Day exhibition. In addition, in recent years, in terms of a light-emitting element, since white light can be emitted by a large light=first and a combination of a glare body or the like, the above-mentioned camera 2 flashing lamp or the like is widely used, and the light-emitting element is widely used as follows: The high-transmission and dispersion of the semiconductor element such as a light-emitting element is fully exerted, and the use of == which constitutes a flat material member by, for example, a secondary heat 2__ increases. In the semiconductor element mounting member, the surface of one surface is set to the main L for mounting the semiconductor element, and the back surface is connected to the external connection surface for the other member, and the plurality of electrode layers for mounting the semiconductor element are formed on the surface. A plurality of electrode layers for connection to other members are formed on the external connection surface, and the 326\total file\94\94145509VTF968049 200824058 pole layer is formed in a plurality of through holes penetrating the insulating member

V

Bu, f main road - | 曰 hole ¥ body special, forming the structure of individual connections. In the above-mentioned +¥ body element mounting member, it is conventionally known that the ceramic body piece of the I body is used for the purpose of re-use the 胚 仵 駆 駆 駆 駆 共 共 共 共 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ...the ceramic green sheet is formed to correspond to the planar shape of the extinct member (four), and at the predetermined position thereof, a pendulum conductor is formed, which will be the same as the ceramic embryonic sheet. The electric paste is filled in the through hole, and the ceramic green sheet and the conductive paste are simultaneously loaded on the member. The π wind has the convenience of the clothing and the conductor element, for example, on the surface of the ceramic element 1 which is formed into a predetermined planar shape, and the surface which will become the external connection surface, the conductivity: printing or The main surface is formed by coating a predetermined planar shape corresponding to the shape of the electrode layer, and sintering the green sheet while sintering (4) to form the base metal layer, and then using the layer of the metal plating layer on the base metal layer. The electrode layer of the external connection surface. [Patent Document 1: Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 2002-232017 [Patent Document] [Problems to be Solved by the Invention] ♦ However, in order to utilize the co-firing method When a semiconductor element mounting member is manufactured, V has a problem that productivity is lowered and manufacturing cost is improved. Therefore, there is a ceramic collective substrate in which a plurality of plate-shaped insulating members are integrally formed on the same plane, and formed according to the above-mentioned co-firing method, and then used to cut 326\total file\94\94145509\TF968049, 200824058 2D :c: ng) or the like is a technique in which the above-mentioned collective substrate is formed into respective regions =, ! However, the area containing a plurality of insulating members: = the amount of shrinkage when the ceramic is large, and the whole cannot be out]: ί 二ί. For example, the rectangular ceramic tile is nearly shrinking toward the inner side of the rectangular corner. The plurality of areas forming the insulating member are win-win = row = each hole of the through hole is contracted to cause the through hole to be two-normal two-state: still due to burning, it is difficult to form from the 夕 之 ^ ' ' The base plate, using the cutting and other side of the 3 male sword ::: 斤,, in order to make the areas are not neatly arranged, shrinking and sending two states: consider the prior estimate because of the wider, but ==; = The number of areas is reduced, and there is a problem of more material waste. The film has a large pottery embryo that will cover the area of the plurality of insulating members, and is formed into a collective substrate, and in the plural region of the upper = insulating member, after each region '+, the shell, the hole, and then The insulating member is manufactured by dividing the area. On the main surface side and the external connection surface side of the insulating member, respectively, the steps of forming the electrode layer by reading, electrolytic plating, etc. are simultaneously performed:): the inner surface of the through-hole formed is metallized to form a connection , ^ Through the through hole formed by the laser processing, because the formation of the laser from the laser, the shell 1 toward the exit side, the diameter gradually becomes smaller, so in the laser 326 \ | ii | \ 94 \ 94145509 \ TF968049 ? 200824058 The surface of the exit side, the above surface intersects the inner surface of the through hole at an acute angle, and because of the corner portion of the father of the corner, the metallization formed by physical distillation, printing, electric ore, etc. is weak, and the film thickness is weak. It is easy to be in an uneven state, and when the electrode layer and the conductive layer are formed on the edge of the bar member, problems such as poor connection between the electrode sound and the conductive layer occur. θ The purpose of the present invention is to provide a collective substrate, which is manufactured by the step of forming a through hole after firing the ceramic green sheet, and the conductive layer formed on the surface of the conductive layer and the main surface or the external connecting surface can be formed. The formed electrode "' is surely connected without causing connection + good or the like. (4) The present invention provides a semiconductor element mounting member which is formed by dividing the above-mentioned collective substrate into insulating members of the respective regions. And a semiconductor device such as an imaging device formed by the semiconductor element mounting member and a light-emitting diode f-constituting member, and a light-emitting diode formed by using the light-emitting diode constituent member. In view of the above, the #合板板 of the present invention has a plurality of plate-shaped insulating structures in the early morning, and is also used as a main surface for mounting semiconductor elements, and the back surface is set as an external connection surface for connection with other members. , using the side of the ceramics in the same (four) neatly arranged shape 'and at least in the area of each of the insulating members, or the position of the boundary line of the 揣, etc. In addition, the inner surface of each of the through holes is formed to open from the side of the above-mentioned == money junction side, and the minimum hole portion ' provided at one of the thickness directions of the insulating member is formed in a push-out shape in which the opening size is gradually reduced. 326\总枪\94\94145509卿 968049 8 200824058 The thermal conductivity of the collective substrate of the present invention is preferably rain/mK or higher, preferably 10/<10-7. 〇 or less. It is preferable that the collective substrate is produced by firing a plate-shaped precursor of the base material and then through-holes. The collective substrate of the present invention preferably includes an electrode layer for mounting a conductor element (which is formed as an insulating member). a main surface side of the region, a connection electrode layer (which is formed on the external connection surface side and used for connecting the fish and the member), and a conductive layer (which is formed in the through hole and connected to the main surface side electrode layer) The semiconductor element mounting member of the invention is obtained by dividing the semiconductor substrate mounting member of the present invention including the electrode layer and the conductive layer, and dividing the respective regions into regions. In the semiconductor element mounting member of the present invention, it is preferable that the surface of the electrode layer of the external connection surface is provided with an insulating member in which the semiconductor element mounting region is set, and on the upper surface. The frame is laminated on the surface so as to surround the above-mentioned area; the thermal expansion coefficient of the above-mentioned insulation = frame is less than 10χ1〇_6/ΐ, and the difference between the thermal expansion coefficient of the frame and the thermal expansion coefficient of the insulating member is best. In the semiconductor device mounting member of the present invention, the semiconductor element mounting member of the present invention is surrounded by the housing and is provided in the area for mounting the semiconductor element mounting region. The imaging device of the present invention is provided with the semiconductor device of the present invention described above, and the semiconductor device 70 is mounted on the main surface of the member of the semiconductor element mounting member, and is provided by the housing. In the enclosed area), and the cover 326\total gun\94\94145509VTF968049 〇200824058 (which is composed of the above-mentioned frame top material). In the semiconductor device of the present invention, the semiconductor device of the present invention includes the semiconductor device of the present invention, the semiconductor device mounting member, and the semiconductor device (which is mounted on the semiconductor device) The main surface of the insulating member in the member, and the above semiconductor element is sealed with a sealing material. Further, the semiconductor device of the present invention includes the electrode layer and the conductive layer, and the smallest hole portion of the through hole is filled with a conductive material forming a conductive layer, and is formed in a collective substrate in which the through hole is closed in the thickness direction. A semiconductor element is mounted on the main surface of each of the insulating members, and the entire surface of the main surface of the semiconductor element is mounted on the collective substrate, and the package is sealed with the sealing material after sealing with a mountain sealing material. According to the division of each region, at least a part of the divided through-holes are open to the side of the main surface and the external connection surface of the insulating member. The light-emitting diode constituent member of the present invention is the present invention. The semiconductor device is a light-emitting element, and the sealing material is at least a light-emitting body or a protective resin. Further, in the above-described light-emitting diode constituent member of the present invention, at least a part of the outermost surface of the electrode layer on the main surface of the insulating member is formed of Ag, Α1 or Al alloy. Further, the present invention (4) includes a package (having a concave portion), the above-described light-emitting member 2 of the present invention (which is mounted on the bottom surface of the concave portion of the package), and a sealing cover or lens (which is The recessed opening is formed by sealing the recessed portion and is made of a material 326\||^\94\94145509\TF968049 10 200824058 which can penetrate the light from the light-emitting diode constituent member. (Effect of the invention) In the collective substrate of the present invention, the inner surface of the through hole is formed, and the minimum hole portion is formed in one place in the thickness direction of the insulating member from the opening on the main surface side of the insulating member and the outer connecting surface side. Since the opening size is gradually reduced, the main surface and the outer connecting surface are formed, and the inner surface of the through hole is formed, and any one side faces at an obtuse angle. Therefore, according to the assembly f plate of the present invention, when the electrode layer and the conductive layer are formed by physical vapor deposition, printing, plating, or the like, the metallization peeling of the corner portion and the uneven thickness of the film thickness can be greatly reduced. The electrode layer and the conductive layer are not connected to each other, and the connection can be ensured, and the reliability of the semiconductor device is further improved. Further, the thermal conductivity of the above-described collective substrate of the present invention is set to the heat dissipation property of the 丨(10)/sec 2 m semiconductor element-mounted member, and the output of the half-moon guar element can be increased. In addition, setting the thermal expansion coefficient of the Huahe board μ substrate below 10x10 /C can be surely prevented when the thermal efficiency of the solar cell is driven by *^^^^ ne 70仟, "expansion and contraction, the semiconductor If the component is applied too much, the joint displacement between the package and the cladding layer may occur, and the bonding failure may occur. ※Wang Yi, the assembly substrate of the present invention is fired after the ceramic substrate of the base material is fired. The through hole is formed and the film is shrunk, and the through hole position is shifted. It is necessary to estimate in advance that the interval formed by the shrinkage is set to be wider, and the interval between the regions is set to be wider: The number of regions, and can reduce the material wave # / add the early film collection 326\||it\94\94145509\TF968049 π 200824058 Furthermore, the electrode layer is formed on the main surface and the external connection surface of the insulating member of the collective substrate of the present invention And forming a conductive layer on the inner surface of the through-hole, the electrode layer and the conductive layer can be connected and connected without causing connection failure. Therefore, according to the division of the above-mentioned collective substrate of the present invention. Semiconductor of the invention The member-mounted member can transmit the conductor member mounted on the main surface through the two-electrode layer and the conductive layer, and can be surely connected to other members without causing connection failure. The external connection surface of the member, at least the surface of the electrode layer is formed at least, and the electrode layer can be soldered, soldered, or the like by various conventional connection methods, and between the electrode layers of other components. In the main surface of the insulating member of the semiconductor element mounting member of the present invention, a region for mounting the semiconductor element is set, and a frame is formed on the main surface of the insulating member by surrounding the region. After the semiconductor element is mounted in the above region, the lid body is joined to the frame body to seal the unit, the half load, and the half (four) element. (4) When the semiconductor element is an image pickup element, the image pickup element is sealed in a state in which the image pickup element is exposed to the cover by using a cover made of a light-transmitting material. The thermal expansion coefficients of the insulating member and the crucible of the above-described semiconductor element mounting member of the present invention are both set to 丨0xl -6 / < 3c or less, and the difference in thermal expansion coefficient is set to 3 <1. -6/. . Hereinafter, the 埶 expansion coefficient of the frame can be made close to the insulating member ′ to prevent the joint of the two from being in a tortuous state: and it is possible to prevent a joint failure or the like from occurring due to a thermal effect. In the insulating member main surface 326 of the above-described semiconductor element mounting member of the present invention, the area of the semiconductor element mounting region is 〇% or more surrounded by the housing: at least the semiconductor element is mounted on the surface of the insulating member main surface 326 聪 \ 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 When the semiconductor element is an image pickup element, for example, when the semiconductor element is an image pickup element, the metal layer can be made to function as a light shielding layer, and the light incident from the back of the image pickup element by the insulating member can be blocked, thereby improving the sensitivity of the image pickup element. . Further, when the semiconductor element is a light-emitting element, the above-mentioned metal layer can be made to function as a reflective layer, and the light-emitting efficiency of the light-emitting diode can be improved.

In the image sensor of the present invention, the semiconductor element mounting member including the above-described housing is mounted on the main surface of the insulating member in a region surrounded by the housing, and the imaging element mounted on the semiconductor element is then placed on the housing. The cover body formed of the light-transmissive enamel plate is configured to be 'closed to the image pickup element in a state in which it can be exposed through the cover body. In the semiconductor device of the present invention, the semiconductor element is mounted on the main surface of the semiconductor element mounting member which is divided by the respective regions, and the structure is sealed by the sealing material, so that the same treatment as the semiconductor element crystal can be performed. 'Installed in a mounting part of another member such as a wiring board. In addition, it is also possible to check whether there is any defect or not in the front of the spare part: I/Please carry out the work, etc. 'Because it is not directly in contact with (10), it is possible to suppress component damage due to static electricity and the like. The situation. X dry guide ^ ^ ^ 明 ( 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四Then, the assembly substrate "sealing material" is obtained by dividing the respective regions, and when the sealing 326\main gear \94\94145509 VTF968049 13 200824058 is applied, the sealing material is prevented from leaking through the through hole and leaking on the back side. Therefore, for example, it is possible to omit the trouble of limiting the size of the single-sided side of the semiconductor element mounted on the collective substrate, and it is possible to use the sealing material to protect the entire surface of the semiconductor device. Further, at least a part of the through-holes divided from the collective substrate is set to be open on the side surface of the insulating member, and a conductive layer formed on the inner surface of the exposed through-hole can be formed to form a solder filu Therefore, when the semiconductor device is mounted on the mounting portion of the other member by soldering, the electrode layer for external connection can be assisted by the formed tin filling, and the electrode layer can be lifted. In the semiconductor device of the present invention, the semiconductor device is a light-emitting device, and the sealing material is one of a light-keeping body or a protective resin. With the configuration, the mounting portion of the light-emitting diode package or the surface light-emitting body (which is configured by arranging a plurality of light-emitting elements in a planar shape) can be mounted in the same manner as the conventional light-emitting device wafer. In addition, before the mounting of the mounting unit, the quality of the light-emitting device can be determined in advance, and the luminescent color can be checked. In addition, when the mounting operation or the like is performed, the light-emitting element can be prevented from being directly contacted. In the case of the above-described light-emitting diode constituent member of the present invention, at least a part of the outermost surface of the electrode layer of the insulating member is made of Ag, A1 or Ai alloy, or the like. Forming, as much as possible, light from the light-emitting element (especially light having a preferred wavelength of 6 〇〇ηηη emitting white light in combination with the phosphor) 326\|§^\94\94145509\TF968049 14 200824058 The rate is reflected toward the front side of the light-emitting diode constituent member, and the light-emitting efficiency can be improved. Further, since the light-emitting diode of the present invention uses the above-described light-emitting body of the present invention In addition, it is possible to manufacture a high-yield light-emitting diode package, and it can be manufactured with high efficiency. [Embodiment] FIG. 1 is an example of an embodiment of the collective substrate 1 of the present invention, and the insulating member 2 for imaging element mounting is used. FIG. 2 is a partially enlarged cross-sectional view of the through-hole 11 in the collective substrate 1 shown in FIG. 2, and the through-hole n is formed in the insulating member 2 in which the collective substrate 1 is divided as shown in FIG. FIG. 6 is a plan view of the semiconductor element mounting member 接合 formed by bonding the frame body 4 to the main surface 21, as shown in FIG. A bottom view of the outer connecting surface 22 side of the insulating member 2 is shown. In the element mounting region 21a on the main surface 21 of the insulating member 2 of the semiconductor element mounting member BL, the imaging element in which the imaging element of the semiconductor element is mounted and the translucent cover FL is bonded to the housing 4 is shown in FIG. Set the cross-sectional view of PE2. Referring to the collective substrate of this example, the entire Xiangtao silk is in the form of a flat plate, and includes a plurality of regions la and a region of a certain width. The region la has a predetermined planar shape (a rectangular shape in the drawing) forming the plate-shaped insulating member 2; the region lb is for partitioning the plurality of regions 3, and a vertical and horizontal matrix is provided between each la for removal during cutting. use. The dotted line in the figure indicates the boundary line l for the partition areas la and lb. In addition, each area la corresponds to the position of the two long sides parallel to each other, respectively, spanning 326 聪 files \94\94145509\TF968049 15 200824058, etc.) burning ^ 3 shape; (4) (four) (Tao Jing belly pieces forming through holes u. 〇 /, Referring to Fig. 2, the accuracy of the south position which is difficult to reach is formed by 2 ♦, s ′′, and the like, and the two faces of the push and pull claws are two: the faces are the side of the main surface 21 of the first and second slave insulating members 2, respectively. The second and second pushes of the insulating member 2 are thicker and the upper side is lifted, and the weight is placed on the smallest hole portion 11a, and the opening is made into a door. The ancient square is circular toward the main surface 2! The conical shape is pushed out and a circular opening is formed at the main surface 21. Further, the outer connecting surface of the edge member 2 is formed toward the outer portion _22 toward the lower side of the opening of the minimum hole portion 11a _=^ becomes smaller _ push-pull' and the shape of the through hole u shown in the shape of the through-hole u is formed by the use of the following: = 2:, __ (SandBlast) method is formed as face 22 The side of the ^^ 1 and FIG. 2 'the outer surface of the collective substrate 1 is connected to the opening of the passhole hole 11 of the J. The tooth hole is formed in the thickness direction to form the 2nd push-out surface llc. At the same time, the main surface 21 is also exposed to the circular area corresponding to the opening of the Beton-hole U, and the other areas are In the state of protection by the photoresist film, sandblasting 326\|I^\94\94145509\TF968049 16 200824058 is used to selectively expose the exposed region of the collective substrate to the first push-out surface 11b. The feature of the perforation by the cutting method is gradually smaller as the perforation advances, so that the two push-out faces form a conical push-out/two push-pull surface llb, and the connection portion of the llc forms a minimum push=1 through-hole 11 In the above method, by adjusting the depth of the perforation and the diameter of the perforation, the diameter of the opening of the most 11 a can be arbitrarily controlled, and the position of the small hole portion 11 & 1 in the thickness direction of the insulating member 2 can be selected. The through hole n is intersected by the first push-out surface 11b, and the angle 2 of the main push surface 21 is at an obtuse angle, and the second push-out surface 11c is also an angle of the obtuse angle Θ. The corpse/r does not include the pole layer 31, 32, the mine guide μ μ, the break 1 pushes the face m and the main face two The corner layer portion 33 is two-way; the metallization can be greatly reduced at the corner portion of the first connecting surface 22: push-out: llc and the external condition, which can be prevented from being connected, and the earth is not uniform. It is connected to the conductive layer 33. Because of the search, the reliability of the electrode layer is surely obtained. In addition, in the through-hole u, the corners intersect, and the rightmost corners of the two corners Pushing / Ub, llc is sharp or all of the film is strictly: the part of the two small holes is interrupted, = ... the state of the uneven sentence. The conductive layer 1 which is well connected to form the upper and lower portions of the thickness is preferably pushed twice = 326\total file\94\94145509VTF968049 17 200824058 m, nc also intersects at an obtuse angle ι. In order to be able to push the two sides. The angle Θ 3 of the lie forms an obtuse angle. As long as the perforation conditions such as the blasting method are adjusted, 'the angle of pushing and pushing the two plucking faces lib and lie can be adjusted. 8. The collector substrate 1 preferably has a thermal conductivity of above lOW/mK. When the thermal conductivity is 1 〇 w/mK or more, the heat dissipation of the semiconductor element mounting member BL can be improved, and the output of the image pickup element PE1 can be increased. Further, the collective substrate i preferably has a thermal expansion coefficient of 10 x 10 V C or less. The thermal expansion coefficient is less than 1 〇χι, and it is prevented from being expanded or contracted due to thermal effects during driving of the element, and the Z imaging element PE1 is subjected to excessive stress, which causes the above-mentioned element ρΕι to break off. The material which can form the aggregate substrate 满足 which satisfies these conditions is, for example, AW, AUSiC'SilBeO'M or the like, and is preferably Ah 〇 3 in terms of cost. However, in consideration of the heat dissipation property, the thermal conductivity of the collective substrate 1 is in the above range, preferably set to 8 〇 w/mK or more, particularly preferably 150 W/mK or more, in order to achieve higher heat. Conductivity, the best use of A1N or SiC. Further, in consideration of narrowing the difference between the thermal expansion coefficients and the imaging element pE1, it is preferable to use A1N or . = Therefore, if the thermal power is specifically set as the most important component, it is preferable to form the collective substrate 1 using A1N. However, when the heat dissipation function is not highly required, it is preferable to form the collective substrate by using Ah3. In addition, the thermal conductivity of the collective substrate 1 is preferably within 300 W/mK, and the thermal expansion coefficient is as described above, taking into consideration the other physical properties of the collective substrate 1 such as mechanical strength, or the manufacturing cost. The best setting in the range is 4xl〇-6~7xl〇'V〇C 〇326\total file\94\94145509\TF968049 18 200824058 80% or more. Thereby, the electrode layer 31 and the metal layer 5 can be made to have a sufficient function as a light shielding layer. However, the plurality of electrode layers 31 must be spaced apart from each other, and the metal layer 5 must also be spaced apart from each electrode layer 31. Therefore, a gap g must be provided between the electrode layer metal layers 5, and the (4) other area (i.e., the entire surface of the region 21a) cannot be covered by the electrode layer 31 and the metal layer 5. Between the electrode layer 31 and the metal layer 5, it is preferable to prevent the occurrence of short-circuiting between the plurality of electrode layers 31, and the electrode layer w and the metal layer 5 are preferably formed to have a coverage area (four) or less. Further, the electrode layer 31 is enlarged to form a (10) to a clear area covering the area of the region (1), and the metal layer 5 can be omitted. The electrode layer 3b and the conductive layer 33 can be formed by a metal material or the like which is known by known ==. Further, each of the above layers may be formed by a single method such as a single layer structure or a multilayer structure of two or more layers, such as a physical vapor deposition method such as a vacuum method or a vacuum method. Wet ^ can be used to form a metal with a sufficient thickness: i = 31, 32, the conductive layer 33 can also form a single, 疋! The bottom layer sound of a single layer or a double layer composed of CU and Ni can be known, and the layer is composed of a gold having excellent conductivity such as Ag and AU, and a multilayer structure of a surface layer of 90.H0 (four). In addition to the thickness of the genus, the physical vapor deposition method preferably forms an example in which the electrode layer 31 and the nozzle 33 are formed by laminating a plurality of functionally separated plural layers, for example, from the vicinity of the collective substrate k: : The side-by-sequence product (I) consists of Ti, Cr, NiCr, Ta, and continuation of several people and metal compounds, 326V total weight: \94\94145509\TF968049 2〇200824058 1 The adhesion layer with excellent adhesion; ) is formed by Bu Yi, (: 1 ^ Bu 1 {〇, coffee, etc., which forms a metal layer that forms the following surface layer, and has a barrier layer); and diffusion prevention of the force (I(1) The thickness of the surface layer uk formed by the composition of Ag, Abu Auf, etc., is preferably set to be the thickness of the prevention layer of the left and right scattering factories. The thickness of the left and right surface layers is preferably set to ^ ~...j Furthermore, it is also possible to use a combination of the physical vapor deposition method layer 3 and the conductive layer 33 to form a multilayer structure. Example H, under the premise that the electrode ore method forms the adhesion layer and the diffusion prevention layer, 3 uses the physical vapor deposition method. After forming a bottom layer composed of Cu and Ni, 2 wet electric surface layers. The conductivity is excellent on the surface of the sub-31, and the reliability of the solder joint (4) is connected to the external connection surface 22, and the reliability of the f is mounted on the substrate of the two-position camera or the like. The machine f is connected to the bonding layer by 4%. The solder is composed of Au#. However, as described above, when the conductive material is used, for example, the electrode layer 3 is 32, or is disposed in a multi-layered early layer structure. The electrode layer 31, 32 is formed on the surface of the main surface 21 of the base 2, and the semiconductor element is mounted on the connecting surface 22 of the semiconductor element. Connection door 2 between other members: 2' A conductive layer 33 (Fig. 1 to Fig. 6) for connecting the two electrode layers 3 and 32 is formed on the inner surface of the through hole U. The electrode layer 31 on the side of the main surface 21 of the vertical surface Each of the through holes is formed in a rectangular shape extending from the through hole 11 formed at a position where the I: : electrode layer 31 of the insulating member 2 is formed, and the outer surface of the surface 22 is extended in the longitudinal direction. The electrode layer 32 on the side also forms a plurality of independent through-holes η, and each electrode layer 32 is formed. The area la of the edge member 2 = the position of one of the two long sides parallel to each other: the rectangle which is extended toward the long side of the other side, and the conductive layer 33 is formed. It covers the entire inner surface of the through hole η and is connected to the electrode layer 31 on the main surface 21 side of the wood δ substrate i, and is connected to the electrode layer 32 on the side of the external connection surface 22. Further, the main surface 21 is not In a state in which the respective electrode layers are contacted, the metal layer 5 is formed. The metal layer 5 and the electrode layer are formed in a state in which the region 2ia is formed in the main surface 21 and is surrounded by the frame 4· for mounting + The area of the conductor π piece) covers the function of the light shielding layer. In other words, the metal layer 5 is used to block the sensitivity of passing through the insulating member 2 and carrying the image pickup element pε 1 from the above-mentioned region 21a. When the light incident after 1 month is increased, the image electrode layer 31 and the metal layer 5 preferably form a layer of 326\|I®\94\94145509\TF968049 19 200824058 covering the area of the area 2la, and the pad may be omitted. , solder mating bonding layer. Further, since the metal layer 5 and the electrode layer 31 are formed on the same surface, it is only necessary to form the structure having the same layer while forming the electrode layer 31. However, since the metal layer 5 has a function as a light shielding layer, for example, even when the electrode layer 31 is formed in the above-described multilayer structure, the metal layer 5 can have a single layer structure having only one layer having a sufficient thickness. f. For pattern formation of the electrode layer 3 and the metal layer 5, for example, a metal mask or a lithography mask or the like is used, and the surface of the collective substrate covered and exposed by the cover is used by == Selective metallization can be carried out by law or physical mineralization. Further, in order to form the multilayer structure by the electric power transfer 31 32, metallization by using different metals may be repeated on the exposed surface of the collective substrate}. Further, when the conductive layer 33 forms the electrode layer 31 and the metal layer 5 on the main surface 21, when the electrode layer 32 is formed on the external connection Φ 22, or when the above-mentioned operation is performed, it is set to be continuous. In a state in which the opening of the hole n is not covered by the mask, the two electrode layers 31 and 32 are formed, and the two electrode layers 31 and 32 are connected to each other. In order to manufacture the imaging element PE1 for mounting the semiconductor element and the semiconductor element mounting member for mounting the semiconductor element, the semiconductor substrate mounting member, in which the electrode layer 3, the conductive layer 33, and the metal layer 5 are formed, the assembly substrate is used. The area 1 b partitioned by the boundary line L is removed by cutting or the like. Accordingly, the remaining regions la are separated to form a plurality of insulating members 2. Then, on the main surface 21 of each of the formed insulating members 2, the frame 326\total file\94\94145509\TF968049 200824058 body 4 is joined by a bonding layer B composed of, for example, a resin, a low-melting glass, or the like. The region 21a exposed on the main surface 21 through the through hole 41 of the casing 4 is set to the element mounting portion 'for the imaging element pE1 on which the semiconductor element is mounted', and the semiconductor element mounting member bl is obtained (FIG. 4 to FIG. 7). The bonding substrate is bonded to the side of the main surface of the collective substrate on which the electrode layers 31 and 32, the conductive layer 33, and the metal layer 5 have been formed by the bonding layer B1. Further, the inclusion is made into a plurality of frames 4 (the system) The region la of the collective substrate is formed with a space, and the set of the plurality of through holes 41) is arranged.

Then, the region lb in the collective substrate 1 and the region of the assembly substrate which is the frame 4 are superimposed on the region of the region lb, and are removed by dicing or the like, and a plurality of insulating members 2 and the frame 4 can be laminated. The semiconductor device mounting member BL. The frame 4 is considered to prevent deformation of the tortoise in a state of being laminated with the insulating member 2, or to reduce the difference in thermal expansion coefficient between the semiconductor element and the semiconductor element. It is preferable to use a thermal expansion coefficient of 1〇xl〇_6/ t^ 4xl (T6~7xl (T6/°c is preferred), and the edge of the 盥 缘 〇 ^ ) and the thermal expansion coefficient of the edge member 2 of the ^, ,, and the edge member 2 is 3x10 /. 〇The following (especially) η-"". Further into the upper...c is better than the material shape H', and the same material as the insulating member 2 is used to form the frame 4, which can completely eliminate the swelling of the eye. Batch, tf ^ , , , ..., v expansion coefficient is. For example, when the insulating member 2 is formed of A1N, the frame 4 can be formed by Α1Ν, when the insulating member 2 is made of A12〇3 At the time of formation, the frame 44+丄 frame η* main road contact is also formed by Ah〇3. In addition, the C body 4* semiconductor element is a dull 4 -l Λ .,, 卞, for which the above-mentioned frame body will be passed To block light, it is preferable to use a light-shielding material. Referring to FIG. 7, the image-cracking PE2 of the present invention is provided with an image pickup device in the region 21" of the above-mentioned semiconductor 326\total file\94\94M5509\TF968049 23 200824058. pE The terminal (not shown) of the image sensor PE1 and the electrode layer 31 are bare == the tip end portion in the upper region 21a is connected to the welding wire wb, and the resin 4 and the low melting point glass are used on the frame 4. The connection sound composed of the like is composed of a cover body FL composed of a light material. The root "image pickup device PE2 can be used for the image pickup unit. pE1 in a state where the lid body fl by exposure, and the imaging element PE1 seal. Each of the image pickup device pEi is connected to an electrode layer or the like provided on a substrate of a digital camera or the like by the bonding wire WB, the electrode layer 3, the conductive layer 33, and the electrode layer. In the embodiment of the collective substrate 1 of the present invention, a partial view of the collective substrate based on the insulating member 2 for mounting the light-emitting element is shown in Fig. 8. Fig. 9 is an enlarged cross-sectional view showing a portion of the through-hole n in the collective substrate i, and Fig. 9 is a partially enlarged cross-sectional view showing the through-hole u in the insulating member 2 in which the collective substrate 1 is divided. Fig. u is a plan view showing the main surface 21 side of the "邑" member, and the bottom view of the outer connecting surface 22 side is shown in Fig. 12. The insulating member 2 of the semiconductor element mounting member BL is shown in Fig. 13. In the main surface 21, a light-emitting element LE1 on which a semiconductor element is mounted, a cross-sectional view of a light-emitting diode structure member LE2 sealed with a phosphor of a sealing material and/or a protective resin, and a light-emitting diode are shown in FIG. A cross-sectional view of the light-emitting diodes 3 mounted on the package 7 in the package member LE2. As shown in Fig. 8, the collective substrate 1 of this example is still formed entirely of ceramics to form a plate-shaped % edge member 2, and includes a plurality of regions 1 a, and a fixed width zone or lb. The region la has a predetermined planar shape (Fig. 326\H^f\94\94145509\TF968049 24 200824058 is rectangular); the region lb is separated by The square of the above-mentioned plural area is arranged in a vertical and horizontal matrix between the respective regions 1a, and is used for cutting by ☆. The dotted line in the figure indicates the side L of the partition areas la and lb. The area la corresponds to the two long sides of the two parallel sides at position 1 respectively. A plurality of dots are formed in the vicinity of the boundary line L (three holes 11 in the figure). The above-mentioned collective substrate 1 is preferably the same as the former example, and the precursor of the base material (the ceramic tile, etc.) is sintered to form a flat plate shape. It is produced by processing the through-holes 11 and then it is difficult to form the through-holes u by the conventional co-firing method. Further, the electrode layers 31 and 32 and the two layers 33 are preferably formed. On the surface of the assembled substrate after firing, in the case of p, the underlying layer composed of m〇 and ^ formed by the co-firing method can also form a crucible which is difficult to form by electroplating. The layer "made as the electrode layer 31" is used as the electrode layer 31. The inner surface of each of the through holes u is formed by the completion of 2 t::=llb and 11C, respectively. The side of the main surface 21 (the upper side in the drawing) of the edge member 2 is provided at one of the thickness directions of p, and is the most circular shape toward the plane shape: a cone push which gradually becomes smaller in diameter σ In addition, the second push-out surface is from the side of the insulating joint surface 22 (the lower side in the figure). Forming a conical push-out shape that is upward toward the mountain and gradually decreasing in diameter of the opening, and forming a circular opening at the outer connecting surface 22. The push surface 11b and the main surface 21 continuing therewith are at a pure angle 326, a total length \94\941455〇9\TF968〇49 25 The angle θ of 200824058 intersects, and the second push-out surface llc intersects with the continuation of the outer joint surface 2 2 at an angle 0 2 of the obtuse angle, thus, when utilizing, for example, physics When the electrode layers 31 and 32 and the conductive layer 33 are formed by methods such as vapor deposition, printing, plating, etc., the corners of the first push surface lib and the main surface 21, and the first push surface 11 c and the outside can be greatly reduced. At the corners of the joint surface 22, metallization peeling and uneven film thickness occur. Therefore, it is possible to reliably connect the electrode layers 31 and 32 to the conductive layer 33 without causing connection failure or the like, and it is possible to improve the reliability of the light-emitting diode constituent member LE2 and the light-emitting diode 1E3. In the case where the through hole η is formed with the conductive layer 33 on the inner surface thereof, the portion where the small hole portion 11a is taken is filled with the conductive material 33a forming the conductive layer 33, and is filled toward the set before the division. The thickness of the substrate ι is closed. Therefore, as described above, the phosphor illuminating member LE1 mounted on the main surface 21 of each insulating member 2 of the collective substrate 1 is irradiated with a phosphor and/or a protective resin of the sealing material. When the FR is sealed, the phosphor and/or the protective resin can be prevented from leaking through the through hole 11 to the back surface of the collective substrate. However, when the conductive layer 33 is formed, in the through hole u, the portion of the smallest hole Ua of the corner portion of the 11b 11c is pushed out, and if metallization peeling or uneven film thickness occurs, the conductive material may not be used. 33& fills the smallest orifice P 11a well. In the case where the minimum hole portion is well filled with the conductive material 33a, it is preferable that the two push pins 11b and 11c intersect at an angle 0 3 of the obtuse angle. In order to form an obtuse angle between the two extraction faces (10) and the angle HC 3 of the HC, /, adjust the conditions for the perforation performed by the sand blasting method, or adjust the 326\ total file\94\94145509\TF968049 200824058. The push angle can be. With reference to Fig. 9, in the through hole 11, the second push-out surface is a position where the boundary line object is between the region la which is the insulating f in the collective substrate 1 and the region lb between the regions la: 'The area ib is removed by dicing or the like to divide each area ^, ::Up 0: 'On the side surface 23 of the insulating member 2 constituting the semiconductor element mounting member BL, as shown in FIG. 12, within the second push surface Uc The formed conductive layer 33 is exposed by the opening 11d. Therefore, the exposed conductive layer 33 functions as a tin-filled portion, and the light-emitting diode constituent member LE2 is mounted on another member (for example, the core of the photodiode, the crack of the photodiode LE3, etc.) by soldering. At the same time, the reliability of the wire can be improved by the formation of the tin-filled auxiliary external electrode layer 32. A method of forming a flat-shaped collective substrate i by pre-sintering and forming a through-hole U having such a shape after use is preferably a method of forming a sandblasting method as described above. The above method can arbitrarily control the opening diameter of the minimum hole portion Ua and the formation position of the minimum hole portion Ua in the thickness direction of the insulating member 2 by (4) pushing the surface of the lib, lie, and the diameter of the hole. Referring to Fig. 9, the minimum hole portion controlled as described above is formed in the thickness direction of the insulating member 2 'in terms of the distance h from the main hole 21 to the smallest hole portion mountain', preferably exceeding the thickness of the above-mentioned insulating member 2 (four) Double, and within 2/3 times the range. Thereby, it is ensured that the push surface (10) and the mountain are located at the minimum hole portion; lla is above and below, and the first push surface m can be intersected with the angle ～ of the main surface 2 at an obtuse angle, and the second push surface Uc can be made. The outer joint surface 22 is also intersected by the angle θ2 of the obtuse angle, and the electrode layer 3 formed by the bismuth 32 is surely connected to the conductive layer 33. In contrast, it is possible to ensure the area from the smallest hole portion & the continuation of the outer connecting surface 22, and the opening of the conductive layer 33, and the function of filling the tin forming portion. In addition, use the material = the method of formation that is performed, by using the substrate from the collection! The first and second push surfaces 11b and Uc of the two sides are connected to each other, and can be formed without deformation of the hole η or the like. Further, it is considered that the surface 1 1 c is sufficiently removed before the exposed area of the tin-filled portion 33 is formed, and the distance h is preferably 1/2 or less times the insulating strength (four). In order to form the through-hole η ' by the above-described forming method, the above-mentioned distance h is preferably set to the left-and-right direction. Further, referring to Fig. 9, the opening diameter d of the smallest hole portion Ua is preferably 1 〇 / /m or more. The minimum hole portion ua having an opening diameter d of 1 〇//m or more, when the through hole u is formed by a general processing method such as the above-described sand blasting method, a state in which the precision is better can be formed. The minimum ^ ^ 11a = hole diameter d of the hole u is formed in a state in which the port diameter d is uniform, since no other processing steps or the like are required for forming the minimum hole portion 11a, so that the productivity of the semiconductor element mounting member BL can be improved, and the defect can be reduced. Further, the opening diameter d of the minimum hole portion 11a is preferably 2 〇〇# m or less. The opening diameter 4 is 2 〇〇//m or less, and the conductive layer 33 is formed on the inner surface of the through hole u. In the meantime, the minimum hole portion 11a can be filled more efficiently by using the conductive material 33a, so that it is possible to more reliably prevent leakage of the phosphor and/or the protective resin FR of the fluorescent body and/or the protective device FR \ 94 94 94 94 94 94 94 94 94 94 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 Condition. In addition, when the pair of through holes 11 The small hole portion 11a is more reliably penetrated by a common processing method such as a sandblasting method, and when the through hole 11 is surface-formed into the conductive layer 33, it is considered that the minimum hole portion 11a is more efficiently utilized with the conductive material. It is preferable that the opening diameter of the smallest hole mountain is 50 to 150 #m, preferably 75 to 125 #m. The collective substrate 1 is considered to improve the heat dissipation of the semiconductor element mounting member BL, and the corresponding On the premise that the light-emitting element LE1 has a high output, it is preferable to set the thermal conductivity to be lOW/inK or more, preferably 8 〇w/mK or more, more preferably 150 W/mK or more, and consider both mechanical strength and the like. In the case of other physical properties, manufacturing costs, and the like, the thermal conductivity of the collective substrate 最好 is preferably set to be 300 W/mK or less. Further, the collective substrate 1 is considered to prevent expansion or contraction due to thermal effects such as driving of the element. When excessive stress is applied to the light-emitting element LE1, and the element LE1 is broken or the joint is detached, the thermal expansion coefficient is preferably set to 10 χ 10 - ν or less. In addition, other physical properties such as mechanical strength, manufacturing cost, and the like are considered. premise The thermal expansion coefficient of the collecting substrate j is preferably set to 4χ1 (Γδ~7xl (T6/°C.) The material of the collecting substrate 1 that satisfies these conditions is as follows: A1 n, Al2〇3, SiC, Si—, BeO Insulating ceramics such as BN. Among them, in particular, in order to achieve high thermal conductivity, it is preferable to use AlN and SiC, and it is preferable to use, for example, A1N, in order to reduce the difference in thermal expansion coefficient between the optical element and the light-emitting element LE1. A12〇3. If the cost is set as the top priority, it is best to use A 1 2〇3 〇326\i|^\94\94145509\TF968049 29 200824058 Referring to the above figures, the master of the above-mentioned collective substrate The semiconductor element mounting electrode layer 3 is formed on the surface 21, and the connection electrode layer 32 between the members of the fish is formed on the external connection surface 22, and the two 'Terminal layers 31 and 32 are connected to each other on the inner surface of the through hole u. Conductive layer 33. Then, the smallest hole portion 11a of the through hole 11 is filled by the deposition of the two electric materials 3 3 a forming the conductive layer 33, and the beacon hole 11 'the dynasty collective substrate thickness before the insulating member 2 is divided The state of the direction is closed. In this case, when the light-emitting element LE1 is mounted on the electrode layer 31 and sealed, the illuminant and/or the protective resin FR can be prevented from leaking through the through-hole u and leaking to the back side. For example, the main assembly of the light-emitting element LE1 on the collective substrate can be omitted. In the specific region on the side of the surface 21, a troublesome procedure for the limited sealing is applied, and the entire surface can be sealed by the above-mentioned phosphor and/or protective resin, so that the size of the photodiode constituting member 1-2 can be further reduced. The thickness of the collective substrate} in the thickness direction of the minimum hole portion 11a filled with the conductive material 33a is preferably set to 1/5 〇 to I" _ 2 of the thickness of the collective substrate 。 7. The right thickness t is the collective substrate (thickness t < When it is 1/5 inch or more, it is possible to prevent the closed through hole from falling off due to its own weight and the like, and the phosphor and/or the protective resin FR leak to the side of the external connection surface 22. In addition, if the thickness ti is 1/2 or less of the thickness t集合 of the collective substrate, the exposed area of the conductive layer 33 on the external connection 22 side can be ensured by the minimum hole portion 11a, and the tin can be sufficiently filled. In addition, it is considered to increase the exposed area of the conductive layer with the function of filling the tin-forming portion, and to prevent the weight of the tin-forming portion from being sealed, and to create a 326\$employee file\94\94145509VTF968049 200824058 = : The through hole n is detached, and the condition of the glory body and/or the protective resin / 6 'external connection surface 22 side occurs, and the minimum hole f 11a is filled with the material 31a. Seven, especially set as a collection base The thickness of the thickness of seven is better. The thickness t2 of the conductive layer 33 formed on the inner surface of the through hole 11 is preferably set to Q. 2]· G times of the opening diameter d of the hole portion 11a. The thickness t2 is up to the opening Ϊ2 2 times or more, when the inner surface of the through hole 11 is formed with a conductive layer 33, the name, the 'door, the small hole portion 11 & more efficiently, the material 31a is filled, etc.; 1 can more accurately prevent the phosphor And / or the protective resin FR is leaked, but if the thickness t2 exceeds the opening diameter d by 1 〇, the effect is better, and the excess conductivity is required, and the efficiency of the method name _ = mlla is reduced. Therefore, the thickness is reduced. ^ is preferably less than u times the size of the second. In addition, the main surface of the region la of the respective insulating members 2 in the conductive layer 2t#t substrate 1 is considered before considering that the minimum hole ratio is well filled with the conductive material. Each of the two semiconductor element mounting electrode layers 31 is formed in each of the two semiconductor element mounting layers, and is provided in an insulated state. Further, the collective substrate is also formed on the external connection surface 22 side of the domain U. The two external connections of the mother are powered on and set according to the insulation state. Therefore, the main / ^ faces in the direction of the face, so the main Two electrode layers 326 on the 21 side, the total file \94\94145509VTF968049 3 】 200824058 11, and the external connection surface 22 (four) two electric _ 32, the double-sided m of the substrate 1 is transmitted through the through hole; the D layer 3 32 will become The area Ia of the insulating member 2 is different from that of the inner surface of the insulating layer 2, and the conductive layer of the inner surface is connected to each other., ' ' ' / knife, say 'electrode layer 31 (the planar shape is formed into a slightly rectangular layer 3lb (From the side of the electrode layer 31 (1) ^1 = 1 square, and to the conductive layer 33 of the through hole n on the side of the main surface 21 and the inner surface of the beacon hole 11, forming an integral and mutually external 'electrode layer 32 (the planar shape is slightly rectangular, the hole U is partially overlapped on the side of the outer connecting surface 22), and the conductive layer 33 on the inner surface of the beacon hole 11 is also integrally formed and connected to each other. The total area of the electrode layers 32 provided on the external connection surface 22 is preferably set to be 3% or more in proportion to the area of the external connection surface 22. Thereby, the light-emitting diode constituting member LE2 is mounted on the semiconductor element. When the electrode layer 32 on the side of the connection surface 22 and the sealing layer 7 of the light-emitting diode LE3 (or the electrode layer provided on the substrate of the surface light-emitting body) are surface-mounted by soldering, the semiconductor element can be sufficiently ensured. Since the heat dissipation path between the component seals 7 (or the substrate) is mounted, the output of the light-emitting diode LE3 can be increased. In addition, the electrode layer 32 is considered on the premise that the heat dissipation path is further ensured. The total area is preferably 5 or more in terms of the area ratio of the outer connecting surface 22, and more preferably 70% or more. However, when it is considered that two or more of the 23⁄4 pole layers 32' are formed to face each other in the direction as described above, the moon-filled blade is lifted before the insulation between the two electrode layers 32 is ensured, and the electrode layer 32 is 3%. Total file\94\94145509\TF968049 200824058 r〇r;. The ratio of the area of the external connection surface 22 is preferably set to the electrode layer 3, and the conductive layer 33 is as follows: :r:r, etc. and may form a single layer structure, or a double layer 31, 32 may be patterned. The method of formation is also "the above method. In the electrode; A1 or A1 alloy, etc.: from::: set = 竑, ... short-length to short-wavelength light below 450nm and superior reflectivity' It helps to improve the luminous efficiency of the reverse-emitting element LE1 when combined with fluorescence. "Short wavelength when white light is emitted: layer = gold is placed: Λ is t-electric material: 'and forms a single-layer structure; When layer 31 is the outermost layer, 1 also has a slightly reflective layer. Further, on the surface of the electrode layer 32, a solder mating bonding layer composed of Au or the like as described above may be formed by using Au as a conductive material and forming an electrode layer of a single layer structure, and = The top layer of the electrode layer 32 of the ΐ structure can be omitted, and the pair of bonding materials can be omitted for use in the above-mentioned collective substrate! The semiconductor element mounting member 搭载 for mounting the light-emitting element LE1 for a semiconductor element is manufactured, and the light-emitting diode constituent member LE2 is manufactured at the same time, and the substrate can be assembled! The light-emitting element ui is mounted on each of the electrode layers 31 of the respective layers, and the entire surface of the collective substrate 1 is sealed with a phosphor and/or a protective resin FR of the sealing material, and then the assembly is removed by dicing or the like. The area lb of the substrate i. According to this, 326\||ig\94\94145509\TF968049 33 200824058 : = = The semiconductor element mounting member BL is formed by self-separation, and the light element: ": / 3 households 1 shows the light-emitting diode constituent member LE2. Mounted by the electric SL welding of the semiconductor element mounting member Μ + pole layer 31 and the 弁 弁 τ τ τ τ τ τ τ τ τ : : : : : : 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极When using the solder used in the subsequent step, it is preferable to use the Au-sn system and Au_Ge with a higher melting point under the rigid edge of the package body 7 or the substrate. In addition, the 'light-emitting element LE1 may be mounted on the semiconductor element mounting member BIj without using the 烊μ 吏 UB bump. Further, after the light-emitting element LE1 is soldered or connected to the semiconductor element mounting member BL, Further, the light-emitting element electrode layer 31 is connected by a soldering wire. / The protective resin for sealing the optical element LE1 can be used, for example, various protective resins known in the art, such as the diarrhea system. And the tolerance to ultraviolet light, etc., it is best to make In addition, the 'fluorescent body has a known fluorescent body that emits white light in combination with a light-emitting element LE1 that emits a wavelength of _four or less, particularly a short-wavelength light of 450 nm or less. When the phosphor and the protective resin are used, the light-emitting element (8) mounted on the electrode layer 31 is first sealed with a glare body, and then sealed with a protective resin so as to cover the glare body. In addition, a phosphor and a protective layer can also be used. The mixture of the resin is sealed. The area of the semiconductor element mounting member BL (in other words, the area of the main surface 21 and the outer connecting surface 22 of the insulating member 2 in this example) is preferably the main surface 326\total file\94\94145509\TF968049 34 In 200824058 21, the area of the light-emitting element LE1 mounted on the main surface 21 (1 to 1 to 4 times of the main surface 21. When the semiconductor element mounting member accumulates the scene = product) is four times larger than the area (8), the (4) aperture can be minimized: With this phenomenon, it is impossible to treat a wafer having a hair-emitting element formed by a semiconductor element mounting == two: illuminating element as a single component, and in a package 7 of an assembly or an xS one-pole LE3. Or mounted on; In addition, if the semiconductor element mounting member BL is too large: =: The material wave material generated when the element LE1 is defective is almost indistinguishable. The second part of the package is described by a material having a high thermal conductivity. It is preferable to reduce the area even if it is within the above range. In other words, under the premise that the semiconductor element mounting member 豇3 is less wasted, in the above range, special!: ί 2 light When the area of the LE1 is 3.5 times or less, it is preferably 3 times or less. If the area of the semiconductor element mounting member BL is smaller than 1.1 times the area of the light-emitting element, it is difficult to implement the light-emitting element! ^E1's carrying work. ί 1 卜 don't be able to use the protective resin apricot knife back seal on the side of the side of the light-emitting element L E1. In addition, in consideration of improving the workability of mounting, and more reliably sealing the light-emitting element LE1 with a protective resin or the like, the area of the semiconductor-mounting member BL is set to be the area of the light-emitting element LE1 in the above range.丨. 3 times or more is better, especially 15 times or more is better. The thickness of the insulating member 2 is preferably set to 〇·1 to 1 mm, especially 0.2 to 0, in consideration of sufficiently ensuring the strength and minimizing the volume of the semiconductor element mounting member BL of 326, the total file of the first file, and the volume of the semiconductor device mounting member BL. 5mm is preferred. A plurality of the above-described light-emitting diode constituent members LE2 are mounted on a substrate to form a surface light-emitting body. Further, the light-emitting diode constituent member LE I is used as the final form of the light-emitting diode element. For example, solder mounting may be performed by means of reflow or the like at a desired position on a circuit board such as a printed circuit board, a backlight constituent member of a liquid crystal, or the like, and may have a function as a light-emitting diode.

Further, referring to Fig. 14, the light-emitting diode constituent member is mounted on the two electrode layers 72 provided on the bottom surface of the concave portion 7a of the package 7 having the concave portion 7a, and the opening 7b of the concave portion 7a is covered with a seal or The lens LS (which is formed of a material through which the light emitted from the light-emitting diode constituent member LE2 can pass) is sealed, and the light-emitting diode LE3 can be obtained.

The mounting of the light-emitting diode constituent member LE2 is performed by soldering the electrode layer 32 of the semiconductor element mounting member BL and the electrode @72 of the package 7 through the solder layer SL1. At this time, part of the molten material is formed on the inner surface of the second push-out surface lle in the through hole ^, and is folded back to the conductive layer 33' exposed in the insulating member 2:3 to form the filled tin strip SL2. Improve the reliability of women's wear. The seal 7 is provided with a substrate 7Q (which forms the electrode layer 72 on the upper side in the drawing), and a reflection member 71 (which is laminated on the substrate 7 () and has a through hole of =). Further, the through hole (four) of the reflecting member 71 is formed from the side of the surface toward the side of the opening 7b toward the outside of the basin of the outside of the door, and the inner surface thereof is set to a so that the member is formed from the light emitting diode. The light emitted by the LE2 is reflected by the surface of the reflecting surface 71a toward the open "b direction, and 326 is visibly\94\94145509VTF968049 36 200824058 and passes through the lens LS to be more efficiently emitted outside the package 7. As the substrate 70, an insulating and heat-resistant substrate such as a ceramic substrate or a glass epoxy substrate is used. Further, the reflecting member 71 is preferably reflected by the light-receiving rate which is obtained from the light-emitting diode-constituting member LE2, and is formed of metal by using the entire or at least the reflecting surface 71a. The through hole u of the above-mentioned Fig. 9 may be entirely formed in a position into the region la of the collective substrate 1. In this case, since the push-out surface llc is not exposed to the side surface 23 of the insulating member 2, it is not necessary to have the function of filling the tin-forming portion of the conductive layer 33 formed on the push-out mountain. Therefore, the beacon hole 11 can also be completely filled with the conductive material 33a. - Figure, i5 household! Γ 半导体 半导体 半导体 半导体 半导体 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' Shaped money view. Fig. 17 is a plan view showing the side of the main surface 2 of the half-piece member of the above example; and Fig. 18 is a bottom view of the system. In the above-described example, the insulating member 2 of the base material is enlarged from the portion of the 基板 through hole 11 of the collective substrate 1 19 by the portion of the 匕丨 through hole 11 of the collective substrate 1 19 . Cutaway view. = "The semiconductor element mounting member of the present example is detached from the semiconductor guide η ^" with reference to Figs. 17 and 18, and the present example 2 (straight single-sided: fixed two-t member BL has a rectangular plate shape The insulating member is turned into the main ® 21 for the light-emitting element, and the back is 326\the total file\94\94145509VTF968049 200824058 _2^The external connection surface for connecting other components of the soldier 22), the light-emitting element, layer 31 (on the main surface 21 of the above-mentioned insulating member 2, he 5 = Γ direction is spaced apart and set to an insulating state), and the electrode layers 32 facing each other (which are opposite each other on the outer connecting surface 22) On, and set to insulation state). 4=, 2 electrode layers 3 and 2 on the outer connecting surface 22 side, and the θ knife passes through the through hole U (which is respectively danced between the corresponding electrode layers on the back surface of the insulating member 2: 2 watch month double μ The outer peripheral side is formed on the inner surface of the i-side member structure "conductive layer 33: = degree direction of a room:: 1 ΐ: the surface shape is slightly rectangular, and except 2 electrode layers 31 31: ΧΤ π ΓΒ 1 ^ ^^"" 21 The conductive layer 33 of the eve r 1 is formed into a body and connected to each other. 卜, /, the planar shape forms a slightly rectangular electrode layer 32, and the extension layer 32b (from the electrode layer 32) The conductive layer 33 is formed integrally with the conductive layer 33 on the inner surface of the beacon hole 11 and is connected to each other. BL and the light-emitting diodes constitute a dream device, and the light-emitting element LE1 is mounted on the main surface 21, and is sealed by a glazing body and/or a protective resin. As in the previous example, it is prepared to have a plurality of insulating members. The collective substrate of the size of 2 is divided into a plurality of regions of the insulating member 2 by the boundary line L. La, and a through hole η is formed at a predetermined position, and the electrode layer 31 is formed on one side and the electrode layer 32 is formed on the back surface, and an electric layer is formed on the surface of the through hole η 326 \ total file \94\94145509\TF968049 38 200824058 33' After the light-emitting element LE1 is mounted on the electrode layer 31, the phosphor and/or the protective resin of the enamel sealing material are used, and then the respective regions la are cut. After that, the image is further divided into Fig. 15, Fig. 16, Fig. 19 and Fig. 2〇, the inner surface of each of the through-holes is formed by the first and second two push-out surfaces Ub and n, respectively, and the first "• facet m is from the main surface 21 side of the insulating member 2 (: the upper surface of the middle Side) from the smallest hole portion 11a (which is disposed in the insulating structure)

One position of the direction, and the opening width d is set to be smaller than the through portion: the other portion of the '11 and the planar shape is an oblong shape), and the open-graded small state forms a push-out shape, and is formed at the main surface 21 The long circle is shaped like a mouth. Further, the "different 2 pull-out surface 11c" is formed from the side of the outer connecting surface 2 2 of the insulating member 2 (the lower side in the drawing) toward the above-mentioned minimum hole 胄 ii & and is formed in a state in which the opening width is gradually reduced. And an oblong opening is formed in the outer connecting surface 2. Further, the above-described beton hole 11 forms a spanning region ia (the two regions which are separated by the boundary line L on the collective substrate 1 and which are the semiconductor elementary members BL), and the region lb (which is attached to the two The state of the area removed by cutting or the like between the regions 1 & Therefore, when the conductive layer 33 is formed on the inner surface of the through hole u, the portion of the minimum hole portion Ua is filled with the deposition of the conductive material 33a forming the conductive layer 33, and the through hole n is not divided in FIGS. 19 and 20. In the state of Li, the thickness of the collective substrate i is closed. Therefore, when the light-emitting element LE1 is mounted on the electrode layer 31 and sealed, the phosphor and/or the protective resin FR can be prevented from leaking through the through-hole 丨1 to the back side 326\main file\94\94145509\TF968049 39 200824058 The situation occurs, for example, on the main surface 21 side of the LE1 = a slight 巿 & the substrate 1 is equipped with a light-emitting element, and the paralyzed bed of the region is limited to the entire surface. * , ^ First fat and / or protective resin FR seal, Και more promotes the light-emitting diode κ mountain seal and thus can constitute the structure #LE2 miniaturization. The Dan's side of the insulating member 2 of the respective regions is divided by the cutting 箄ft-FIG. 15 to FIG. 2T, and the conductive layer 33 formed by the conductor element mounting member , is divided by the gate 弟 2 The conductive layer 33 on the inner surface is exposed and exposed. Therefore, it is possible to make the function of the bare-faced <tin forming part, and the member LE2 is spliced and dialed #田, X-polar body m in the county 3 on other components (for example, the light-emitting diode The connection power (4) 32 is used to form the tin-assisted external I reverse electrode layer 32, which improves the mounting reliability. The through-holes having the shape shown in the figure are replaced by the ancient ones, and the intrusion is also formed by sandblasting. The face panel 1 is formed on the one-side side of the external connection surface 22 so as to correspond to the opening of the through-hole n, and the shape of the field which is exposed by the F m is also set to an oblong shape. The sand method applies a selective thickness to the bare exposed area: 1 door + no universal hole, forming a second push 'on the back side of the main surface 21'. Similarly, the pair is in the pass. The hole 11 is open and is not set to be oblong by the shape of the photoresist film. The etched sandblasting method is used to apply a selective thickness direction perforation to the aggregate: two: = ^ region to form the first! push I face b. The characteristics of the perforation by the sand blasting method are gradually dimmed with the advancement of the perforation, so that it can be shaped Forming 〖 (4) n. 326, 图 | | 图 图 图 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 326 贝 贝 贝 贝 贝 贝In other words, referring to the objects 15, 16 , the position where the minimum portion Ua is formed in the thickness direction of the insulating member 2 is expressed by the distance h of the main surface 21 from the minimum hole portion 11 a, preferably exceeding the thickness to of the insulating member 2 The range a of 2/3 times or less is preferably 1/2 or less of the thickness ^ of the insulating member 2. Further, it is preferably about 5#m to 5〇#m. Further, the opening of the smallest hole Ua The width d is preferably set to 1 〇 to 200, especially preferably 〜15 〇/Zm, and more preferably 75 to 125 (four). In addition, the swell: the opening degree d" refers to the two ends of the rectangular center portion. In the ellipse corresponding to the shape in which the semicircles are connected, the width in the direction orthogonal to the center line of the center point of the two end semicircles is connected. The thickness tl in the thickness direction of the insulating member 2 filled with the conductive material 33a in the minimum hole portion 11a is preferably It is set to 1/50 to 1/2 times the thickness t of the insulating member 2, particularly preferably 1/2 〇 to 1/5 times. It is preferable that the thickness of the conductive layer 33 formed on the inner surface of the through hole u is set to be the minimum hole portion ila, and the width d of the port is 〜·2 to 1·〇 times, preferably 〇·3 to 〇·5 times. The size of each portion other than the through hole 11 is preferably set in the same range for the same reason as exemplified above. In other words, the area of the main portion 21 and the outer connecting surface 22 of the insulating member 2 is preferably set to the main surface. 21: The area of the light-emitting element LE1 (the projected area on the main surface 21) is particularly preferably h 3~3·5 times, and more preferably 1. 5 to 3.0 times. Further, the thickness of the member, the bar, the barium member, and the crucible member 2 is preferably set to 〇· ι 〜ι_, and particularly preferably 〇 2 to 〇 5_. · The total area of the electrode layer 32 provided on the outer connecting surface 22 is 326\$i^f\94\94145509\TF968049 200824058 = the ratio of the area of the outer connecting surface 22, preferably set to 50% or more. Good, more on the 7卟μ helmet - preferably below m. _ is better. Further, the above-mentioned ratio-electrode layer 3b and the conductive layer 33 may be made of a known metal material such as a sapphire method, a sputtering method, or the like, or a vacuum. The vapor deposition or the two-layer or more of the grouping method 'forms a single layer structure from Ag, Α1 赤Α1 into the human beauty. Preferably, layer 31 is formed by at least its surface # & Meng, etc., and electrode layer 32 is preferably formed of at least a surface which is formed of Au. Preferably, the insulating member 2 is made of a thermal conductivity _κ or more and a number of 10 x 10 -6 /. 〇 〇 〇 〇 〇 , , 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷 陶瓷After the ceramic scorpion precursor (the ceramic slab-like collective substrate 1), via the above-mentioned collective substrate "moxibustion:: -32 edge = 7 = body constituent member LE2 as described above" will have a plurality of insulation, the size of the piece 2 The collecting substrate 1 partitions a plurality of regions la and forms a through-hole at the 疋 position. On the back surface, the electrode layer 3 is formed on the front surface, and the electrode layer 32 is formed on the moon surface. When the guide 33 1 is formed, the minimum hole portion 11a of the through hole 11 is divided into the respective regions la by mounting light on the electrode layer 31 in a state where the second hole is filled, and the semi-conductive element 2 can be formed. Second: 326\|lit\94\941455O9\TF968049 42 200824058 is produced at the same time. In addition, 'the above-mentioned light-emitting diode constituent member LE2 is plurally formed to form a surface light-emitting body. In addition, the light-emitting diode constitutes The member; ^ ' can be used as the final form of 70 pieces of the light-emitting diode. For example, in a circuit board such as a substrate, a liquid crystal backlight, or the like, a solder wire such as a solder wire, or a light-emitting diode (4), the light-emitting diode component (10) may be soldered. The dry grid is carried on the bottom surface of the package 7 shown in Fig. 14 on the bottom surface of the electrode layer 72 and the opening 7b of the recess 7a; 2, which is made of a light-emitting diode forming member L-heart By forming a seal through the material, a light-emitting diode can be obtained. The molten solder is formed on the inner surface in the through-hole u, and is folded back on the side of the insulating member 2 to form a layer 33, to form a fill-in SL2. Therefore, the reliable production of the installation is improved. As shown in FIG. 21 and FIG. 22, the inner surface of the through-hole u can also be in the shape of a cone which is the same as the ten-thickness, and the shape of the push-up shown in FIG. 19 and FIG. In other words, 2 = llb on the inner surface of the through-hole u of the pattern (which is respectively disposed in the two regions la which are to be connected to the semiconductor light-emitting element cover), and i second push-out:: adjacent = wide-faced 2 Areas " and their (between 2 and 2 b and the right set) are set through the above 2 The two smallest hole portions Ua are connected to the above-mentioned two 'ith i-th push-out surfaces 11b from the main surface 326V of the insulating member 2, respectively, the total groove \94\94145509\TF968049 43 200824058 21 'the two circular shapes that are circular in shape The hole portion na' is formed in a tapered shape in which the opening diameter is gradually reduced, and a circular opening is formed in the main surface 21 in the respective regions la. The second push-out surface 11c is connected from the outer surface of the insulating member 2. The lower side of the figure is oriented toward the two smallest holes... the planar shape is formed at the central end of the rectangular shape to form a concentric with the two smallest holes, respectively: semi-circularly long ovals and formed like The width of the long circular opening defined earlier is gradually becoming smaller and smaller. The initial 妒 门 + 叙 叙 〗 〖 〗 〖 〗 〖 〗 〖 〗 〖 〗 〖 〗 〖 〗 〖 Oval opening. In the external connection surface 22, it is preferable that the through-holes 11 are joined by the sandblasting method to form the external connection surface 22 of the substrate 1 (the wind is replaced by the 3' in the collector opening, and is not provided by the photoresist film: Naked: face:: corresponding to the through hole 11 =:= For the exposed area in the collective substrate 1, the Γ==perforation' is formed to form the oblong second push surface UC, and the same as the main surface 21 The side of the lunar surface of the crucible is in the shape of a region corresponding to the exposed portion which is not protected by the photoresist film, and the U ^ = selected in the collective substrate 1 by sandblasting. In the wide-angle direction, the perforations are formed on the second push, and each of them is formed by a total of two ❺ 固 固 固 施 施 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 = The opening size will gradually change the through hole U in the shape of the through hole η. The portion of the hole is formed by the guide;:::=33, the conductive material 33a of the smallest hole portion 33 is deposited and filled 326\ Total slot\94\94145509VTF968049 44 200824058 :, due to: the assembly base in the front of the split... in the thickness direction is closed, and the phosphor can be prevented. / or the protective resin (9) passes through the through hole u. Further, when the adjacent region 1 & or - lb is removed by cutting or the like, the second push surface n: = layer 33' is penetrated through W Since the enamel is exposed on the side surface 23 of the insulating member 2, the same reason as the function of the tin-filled portion can be set in the same range. It is preferable to set it in the same range. In the example of the embodiment of the present invention, an example of the embodiment of the collective substrate of the present invention is an enlarged plan view of the collective substrate portion based on the image sensor mounting I and the edge member. In the collective substrate, a cross-sectional view of a portion of the through hole is shown in an enlarged view. FIG. 4 is a plan view of the main surface side of the insulating member in the insulating member formed by the earth plate cutter. The semiconductor element mounting pattern 6 formed by bonding the frame on the main surface is a bottom view of the external connection surface of the insulating member. FIG. 7 is an image sensor in which the semiconductor element is mounted in the insulating surface region of the semiconductor element mounting member, and Frame ^ A cross-sectional view of an imaging device formed by a light-transmissive cover. 326\Total file\94\94145509VTF968049 45 200824058 FIG. 8 is another example of an embodiment of a collective substrate, and is used for mounting a light-emitting element, and an edge member. Fig. 9 is a partially enlarged cross-sectional view showing a through hole in the collective substrate. Fig. 1 is an enlarged cross-sectional view showing a portion of the through hole formed by the insulating member divided by the collective substrate. It is a top view of the main surface side of the insulating member. Fig. 12 is a side elevational view of the outer connecting surface of the insulating member. Reference numeral 13 denotes a cross-sectional view of a member of the insulating member of the semiconductor element mounting member, which is a member of the insulating member, and which is formed of a light-emitting body and/or a protective resin. In the extreme diagram, the light-emitting diode constituting member is mounted on the package, and the light-emitting two-way=two-book=two-conductor: the mounting member is _ (four) in a state in which it is penetrated. FIG. 17 is a plan view of the main surface side of the semiconductor element mounting member of the above-described example, and FIG. 18 is a bottom view of the external connection surface side. The insulation pattern of the mother seal of the sub-conductor element mounting member is constructed, and the second =:::r is used to enlarge the top view. Fig. 21 is an enlarged plan view showing a beton hole changing portion. Figure 22 is a cross-sectional view taken along the line β-β in Figure 2; 326\总档\94\94145509\TF968049 46 200824058

[Description of main components] 1 collective substrate la area lb area 2 insulating member 4 frame 5 metal layer 7 package 7a recess 11 through hole 11a minimum hole 11b" 11c push surface (inner surface) lid opening 21 main surface 21a component mounting Area 22 External connection surface 23 Side surface 31 Electrode layer 32 Electrode layer 33 Conductive layer 33a Conductive material 70 Substrate 71 Reflecting member 71a Reflecting surface 326\|»94\94145509\TF968049 47 200824058 72 Electrode layer BL Semiconductor component mounting member, FL cover FR phosphor and/or protective resin (sealing material) L boundary line LEI illuminating element (semiconductor element) LE2 illuminating diode constituting member LE3 illuminating diode • LS sealing cover or lens PEI imaging element (semiconductor element) PE2 Camera SL1 Solder layer SL2 Filled with tin 326\总档\94\94145509\TF%8049 48

Claims (1)

200824058 X. Patent application scope: 1. A semiconductor component mounting member characterized in that an insulating member integrally formed of ceramics forms a main surface for one side and a back surface for connection with other members; The inner surface of the thickness direction of the plate penetrates from the smallest surface portion provided at the side of the main surface side and the outer connecting surface side in the thickness direction, and is opened and reduced: the size gradually faces and the body element is mounted. The electrode layer formed on the insulating member is formed on the external connection surface; and the electrode layer connected to the main surface side and the electrode layer for connection to other members, and the conductive layer is formed on the inner surface of the through hole. Electrode layer. In the semiconductor element mounting member of the first application of the Japanese Patent Application No. 1, the thermal conductivity of the member of the center and the edge of the bar is 10 w/mK or more. - 3. In the semiconductor device mounting structure m of the patent range, the thermal expansion coefficient of the insulating member is 1〇xl〇_Vt or less, and the semiconductor component mounting member of the first application of the patent scope is 'The insulating member is formed of (4), Al2〇3, or Sic. - 5. In the body element of the application for the full-scale enclosure, the thickness of the insulation member is Ojq·. The semiconductor element mounting member is composed of the first extraction surface and the second extraction surface. 6. The semiconductor element mounting member is formed in the item i of the patent application scope; 326\|I^t\94\94145509 \TF968049 49 200824058 The first push-out surface is formed such that the inner surface of the through-hole forms a minimum hole portion which is provided at a position which is pushed toward the thickness direction of the insulating member; the port diameter gradually becomes smaller, and is opened at the main surface; The second second pushing surface forms a push-out shape so as to gradually decrease from the outer connecting surface toward the minimum hole portion, and intersects the outer surface of the outer connecting surface and the main surface connected thereto The angle of production, the angle of intersection of the 2nd face and the external connection face connected to the brother 2, 2, and the angle θ3 of the above two push faces are obtuse angles. In addition, the thickness of the semiconductor component mounting member of the first application of the patent range, the i-money member (four) edge member, the distance h, relative to the thickness of the fine-grained & m fine range Γ ○ lt;h 8. The patent range of the "member's semiconductor component mounting member, which = small hole 敎 planar shape to form a circle, at the same time, its opening straight Φ9:: 5# patent range of the first item of the semiconductor component In the mounting member, at least a portion of the beacon hole is open to the side surface of the main surface of the insulating member and the external connecting surface. For example, in the semiconductor element mounting member of the item i of the patent application, the smallest hole portion of the hole II is filled with a conductive material forming a conductive layer, and the through hole is closed in the direction of the degree. 11* As in the semiconductor component mounting member of the scope of claim i, the entirety of the beacon hole is closed to the side of the insulating member main surface and the external connecting surface 326\total rushing \94\94145509VTF968049 5〇 200824058. 12. In the first application of the patent specification, the through hole is entirely closed by the conductive mounting layer of the conductive layer. ^ 4 landfills, in thickness 13. As claimed in the patent scope! The result of the project. 4 Called Wang Shaozheng was shaped by Au 14. In the scope of the patent application, the outermost surface of the electrode layer or the A1 alloy is formed. In the semiconductor element mounting member of the first aspect, at least a portion of the surface is made of Ag, Au, or A1. The main component of the semiconductor element mounting member is the semiconductor element mounting member of the fourth aspect of the patent application, and the electrode layer of the surface is formed as a multilayer structure. Shun, in order to contain · 近 近 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( And a stop layer; and (ΠΙ) a surface layer composed of Ag, A1, or Au. In the semiconductor element of the 15th patent application scope, the thickness of the adhesion layer is the diffusion prevention cow ^ U1~1.5", the thickness of the surface layer is 01w. The degree is Π. The semiconductor of the first patent scope The component mounting member has an Au pad laminated on the electrode layer of the main surface. 18. The semiconductor component mounting member according to the first aspect of the patent application, wherein the main component of the insulating member is a region where the semiconductor element is mounted on the main surface of the insulating member, 326V, and the main surface of the insulating member is 5^• laminated on the main surface. There is a frame to surround the above area. 'For the semiconductor component mounting member of the 18th patent range, the thermal expansion coefficient of the G-edge member and the frame is 'below,' the difference between the thermal expansion coefficient of the body and the thermal expansion coefficient of the insulating member is & 1 ϋ / Below C. The semiconductor element mounting member of the present invention is used for mounting a semiconductor element surrounded by the semiconductor element. 20. In the ninth application patent, the main surface of the insulating member is covered by the metal layer of the electrode layer by the frame region '80% or more of the area. The present invention is characterized in that it has a feature: a semiconductor element mounting member; and a semiconductor element mounted on the main surface of the insulating member in the semiconductor element carrier member. μ. The semiconductor device of claim 61, wherein the body member is sealed by a sealing material. 23. The semiconductor component according to claim 21, wherein the semiconductor surface of the semiconductor component mounting member is hl to 4 times the projected area of the semiconductor. 'It is characterized in that at least one of the semiconductor elements of the semiconductor device is used for the illumination and protection of the semiconductor element, and the light-emitting diode constitutes a component of the semiconductor device of the second item, and the sealing material uses at least the firefly. Light body 0 25. A kind of light-emitting diode, which is characterized by: a package having a concave portion; 326\total file\94\94145509\TF968049 52 200824058 2: = item: light diode component, equipped The seal or lens is sealed, and is made of transmissive self-illuminating light. In the recessed-opening diode constituting member 'the material for illuminating the recessed light 26', the image-capturing device' is characterized in that the semiconductor element image sensor of the invention is applied as a semiconductor element. The above-mentioned: the region surrounded by the frame in the main surface of the insulating member of the body member; the body 'joined on the upper surface of the frame to seal the light-transmitting plate in the frame. Component lap and , and by 326\||^\94\94145509\TF968049 53