TW200823313A - Method of coating carbon film on metal substrate surface at low temperature - Google Patents

Method of coating carbon film on metal substrate surface at low temperature Download PDF

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TW200823313A
TW200823313A TW095143215A TW95143215A TW200823313A TW 200823313 A TW200823313 A TW 200823313A TW 095143215 A TW095143215 A TW 095143215A TW 95143215 A TW95143215 A TW 95143215A TW 200823313 A TW200823313 A TW 200823313A
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Taiwan
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carbon film
vapor deposition
chemical vapor
metal substrate
carbon
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TW095143215A
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Chinese (zh)
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Shr-Kuen Chen
zhi-ye Zhong
Bo-Ren Zhu
zheng-hao Huang
Tse-Hao Ko
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Univ Feng Chia
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Publication of TW200823313A publication Critical patent/TW200823313A/en

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/50Fuel cells

Abstract

A method of coating carbon film on metal substrate surface at low temperature that consists the following steps: (a) metal substrate preparation: choosing a metal substrate whose soften temperature is higher than that of the afterward carbon film covering process. (b) catalyst layer pre-coating: pre-coating a catalyst layer of thicker than 0.01μm on the metal substrate surface. (c) carbon film coverage : using chemical vapor deposition process (CVD) to degrade and dehydrogenate carbon raw material at reaction temperature of 300DEG C to 900 DEG C and to coat a carbon film of 0.1 μm to 10 μm thick on the catalyst layer. Through pre-coating a catalyst layer on metal substrate, a highly graphitized and continuity compact carbon layer is prepared under low temperature. This method is suitable in producing metals of high electric conductivity and high corrosion inhibition such as metal diodes of polymeric electrolyte thin film in fuel battery and metal electrode of electrolytic cell.

Description

200823313 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種於金屬基材表面披覆碳膜之方 法,尤指一種於金屬基材表面低溫披覆碳膜之方法,其可 在低溫下利用一般的化學氣相沈積技術,在常用的金屬基 材表面成長高導電性、高抗蝕性、高黏著力及高彼覆率的 緻密碳膜。 【先前技術】200823313 IX. Description of the Invention: [Technical Field] The present invention relates to a method for coating a carbon film on a surface of a metal substrate, and more particularly to a method for coating a carbon film on a surface of a metal substrate at a low temperature. Using a general chemical vapor deposition technique at low temperatures, a dense carbon film having high conductivity, high corrosion resistance, high adhesion, and high coverage is grown on the surface of a commonly used metal substrate. [Prior Art]

根據日本民間市調公司富士經濟的調查(資料來源: 曰經產業新聞第13版,2006/3/10 ),2005年燃料電池主 要零件的市場規模是1 〇億元新台幣,預計到2020年,燃 料電池零件的市場規模將急速成長超越600億元新台幣(燃 料弘池發電系統的總市場規模將達3200億元新台幣); 其中燃料電池的雙極板約佔零件總成本的3〇%。調查結果 亦顯不,2015年後燃料電池車之需求將會擴大,2〇2〇年 之燃料電池市場將隨零件價格的降低而快速成長。 目4各式燃料電池(高溫型或低溫型)的雙極板(bip〇1w ^ 2 1或電解池之電極()板常用的材料包括商 二=墨、高分子7石墨粉複合材料、碳/碳複合材料與金屬 材料等,各種材料的說明如下·· 1 ·商用石墨 ^商用石墨為目前研發燃料 '用的雙極板和電解池電極材 在燃料雷、冰土 π 电池的使用歷史最悠久 電池原型(prototype )所最 質。由於石墨雙極板等元件 ,其實測數據、可靠度分析 5 200823313 及哥測等資料最為齊全,因此石墨的導電性、抗録、氣 社、性及機械性能仍被用來訂為雙極板等零件的技術規格。 但由於其製程繁複(必須在2〇〇〇〜25〇〇。。反覆燒結,且必 須逐片,用CNC車削精密之氣體流道),易於碎裂,故價 ^十刀叩貝’佔燃料電池材料成本的3G%左右,因此採用 價廉且堪用的替代性材料已是推廣燃料電池必經之路。 2 ·高分子/石墨粉複合材料 夕石墨粉與高分子之複合材料成纟比商用石墨低廉甚 可知用射出成型(injeetlGn molding)製作氣體流道, 不需採用CNC車床等眚會执供、仓> 一 \ 7 帝、 、重。又備進仃向为子電解質薄膜燃料 包池(polymer electr〇iyte membrane fuel ,pEMFc) 雙極板之氣體流道等精密加工,可大幅降低材料及加工之 成本’適用高尺寸精度及大量生產之製程,且抗钱性與石 :無異’目前已漸居質子交換膜燃料電池之雙極板的主 /;lL仁由於咼分子石墨複合材的電氣阻抗仍高於商用高资 2墨’故其發電效率等重要特性仍不及石墨雙極板燃料 “ ’另外,高分子石墨複合材的透氣率及機械性能仍不 、—人:可#及胥測數據仍需長時期建立,故高分子石墨 :合材是否為未來⑯㉟燃料電池雙極板的主流仍不確 定0 ^ ·碳/碳複合材 由於必須反覆進行浸滲及冑碳化的製程,因此價格 雖比商用石墨低廉,但較其他材料之製程昂貴 秋 箱Η哲认a ^ ^ 貝均與石墨相當,但亦不具大量推廣之潛力。 6 200823313 4 ·金屬材料According to the survey of the Fuji economy of the Japanese private market company (Source: The Economics News, 13th edition, 2006/3/10), the market size of the main parts of fuel cells in 2005 was NT$100 million, which is expected to be 2020. The market size of fuel cell parts will grow rapidly beyond NT$60 billion (the total market size of the fuel Hongchi power generation system will reach NT$320 billion); the fuel cell's bipolar plates account for about 3% of the total cost of parts. %. The results of the survey are also not obvious. The demand for fuel cell vehicles will expand after 2015. The fuel cell market in 2012 will grow rapidly as the price of parts decreases.目4All kinds of fuel cells (high temperature type or low temperature type) bipolar plates (bip〇1w ^ 2 1 or electrolytic cell electrode () electrode commonly used materials include Shang 2 = ink, polymer 7 graphite powder composite, carbon / Carbon composite materials and metal materials, etc., the description of various materials is as follows: · Commercial graphite ^ Commercial graphite is currently used in the development of fuel 'bipolar plate and electrolytic cell electrode material in the fuel mine, ice soil π battery has the longest history of use The prototype of the battery is the best. Because of the graphite bipolar plate and other components, the measured data, reliability analysis 5 200823313 and Ge test and other materials are the most complete, so the conductivity, anti-recording, gas, properties and mechanical properties of graphite It is still used as a technical specification for parts such as bipolar plates. However, due to its complicated process (must be 2〇〇〇~25〇〇.. Reverse sintering, and must be piece by piece, use CNC to turn the precision gas flow path) It is easy to break, so the price of the ten-knife mussels accounts for about 3G% of the cost of fuel cell materials. Therefore, the use of inexpensive and usable alternative materials is the only way to promote fuel cells. 2 · Polymer / graphite Powder composite The graphite composite powder and the polymer composite material are cheaper than the commercial graphite. It is known that the injection flow molding (injeetlGn molding) is used to make the gas flow channel, and it is not necessary to use a CNC lathe, etc., and it will be supplied, warehouse, and the like. It also prepares for the precise processing of gas channels such as polymer electr〇iyte membrane fuel (pEMFc) bipolar plates, which can greatly reduce the cost of materials and processing. The process, and the anti-money and stone: no different 'currently has been the protagonist of the proton exchange membrane fuel cell bipolar plate /; lL kernel because the electrical impedance of the bismuth molecular graphite composite is still higher than the commercial high-energy 2 ink ' Therefore, the important characteristics such as power generation efficiency are still inferior to those of graphite bipolar plate fuel. 'In addition, the gas permeability and mechanical properties of polymer graphite composites are still not good. - People: can be measured and data still needs to be established for a long time, so the polymer Graphite: Whether the composite material is the mainstream of the future 1635 fuel cell bipolar plate is still uncertain 0 ^ · Carbon/carbon composite material has to be repeatedly impregnated and carbonized, so the price is better than commercial stone Cheap, but more expensive to process other materials autumn box Η Zhe recognize a ^ ^ shellfish and graphite are pretty, but nor has a lot to promote the potential. 62008233134 · Metal Materials

般而。,金屬雙極板已被認為是未來燃料電池雙極 板的主流’因為其價格十分低廉,導電性、機械性能及氣 於石墨’且適合大量生產之加工製程,如氣體流 、“成型(stamping)等。然而金屬材料的抗蝕性不 :石例如不銹鋼、鎳合金、銘合金等金屬材料在燃料 电池嚴可的操作環境下,易於腐餘而釋放出金屬離子,進 而毒化質子傳導膜(如杜邦公㈣祕⑽)及奈米級的白 金觸媒’造成燃料電池發電效率逐漸衰退等壽測問題。As usual. Metal bipolar plates have been considered as the mainstream of future fuel cell bipolar plates 'because their price is very low, conductivity, mechanical properties and gas in graphite' and suitable for mass production processing, such as gas flow, "forming" However, the corrosion resistance of the metal material is not: the metal materials such as stainless steel, nickel alloy, and alloy are prone to spoil and release metal ions in the strict operating environment of the fuel cell, thereby poisoning the proton conductive membrane (such as DuPont (4) secret (10) and nano-scale platinum catalysts cause life-span problems such as the gradual decline in fuel cell power generation efficiency.

廣金屬雙極板等石墨替代材料之重要課題。 因此,目月IJ的金屬雙極板常披覆兼具有導電性及抗兹 性的氮化鈦(TiN)披覆膜。然而TiN的導電性不如石墨, 需在氮化鈦披覆膜上再鍍一層金(Au)或# (⑴等貴重 惰性金屬薄膜以降低雙極板之接觸電阻,但因而顯著提 间,、成本3外’披覆氮化鈦(或彼覆氮化欽/金)的金 屬雙極板其抗錄雖比原來的金屬基板大幅提高,但仍不 及石墨,石墨雙極板的使用壽命遠超過50⑻小時,但披 覆氮化鈦/金的金屬基板其壽命約僅2000小時。因此,如 何改善金屬雙極板之抗蝕性而又不減損其導電性,確是推 提高金屬抗姓性之研究由來已久,早期多採用惰性材 料被覆在金屬基材表面,例如將惰性金屬銀(Ag )、金、 拍、把(Pd)諸在-般金屬基材表面,這賴層除具防 敍效果之外,#具很高的導電率,適合電子元件相關之應 用。然而’使用這些貴重金屬將大幅增加材料成本。其: 7 200823313 披覆材料雖具優良之抗餘特性’但 不具備良好之導電 性,例如使用電漿誘發式化學氣相沈積法(plasma enhanced chemical vapor deposition;簡稱 PECVD )來披覆類鑽膜 (diamond like carbon film;簡稱 DLC film)或使用高分 , 子披覆層。 先前採用觸媒材料生長碳材的技藝多用在製作奈米碳 管(carbon nanotube ; CNT )粉體、奈米碳管顯示板或奈 _ 米碳管發光元件等,例如使用真空電弧法,利用碳電極和 鎳粉觸媒製作奈米碳管粉末、利用微影蝕刻技術預先製作 陣列式錄金屬塾(厚度僅〇·〇〇3〜〇·〇ι # m),爾後使用PECVD 4 ‘私在面 (>900 °C )下催化生長陣列式奈米碳管發 射電極,以供平面顯示板等領域使用。亦有製程方法是利 用電鐘法將多層石墨層的奈米碳球沈積於基材。 其他常見的碳膜製程之一是高分子塗佈熱裂解法,首 先將特定之高分子,如乙炔聚合物(acetylenic p〇lymer ) φ 等的有機溶液塗佈在金屬表面,再採用熱裂解法獲得含碳 畺起過9 0 /〇的披覆層,以保護金屬基材,但此一方法所製 備之碳膜的膜厚比化學氣相沈積披覆膜更厚,碳膜之黏著 力及膜厚均勻度都不及化學氣相沈積製程。 另外,亦有製程技術如下:先在鋁基板的表面進行射 出成型,以黏附一層導電性高分子複合材之氣體流道,但 4匕 ^射出成型之複合材層因為沒有完全氣密,以致無法阻 巴=作條件下的腐蝕環境,因此鋁板基材上面仍須使用濺 等方法披设貝重惰性金屬或氮化鈦、氮化鉻(CrN)等 8 200823313 保護層,製程更加繁複。 【發明内容】 有龜於現有製程技術尚無法在低溫下進行,並於金屬 •基材表面披復有咼導電性與高抗蝕性之碳膜,本發明之目 \的在於提供一種於金屬基材表面低溫披覆碳膜之方法,其 .可以在低溫下於金屬基材表面披覆碳膜,並且此碳膜具有 南導電性與面抗姓性。 善為達成上述的目的,本發明之於金屬基材表面低溫彼 覆碳膜之方法係包括以下步驟: 準備金屬基材:選用軟化度高於後續披覆碳膜步驟 之反應溫度的金屬為基材; 預鍍觸媒層:於金屬基材表面預鍍厚度超過〇〇1 # m 之觸媒層; 披復石反膜·利用化學氣相沈積(chemicai vap〇r deposition ; CVD )製程,使用承載氣體(carrier gas)將 φ 含碳原料送入化學氣相沈積反應腔體,使含碳原料在反應 温度300°C至900°C間裂解脫氫,而於觸媒層上披覆厚度 為〇·1μιη至1〇μπι之碳膜。 本發明可達成的具體功效包括: 1.提升金屬材料表面的抗蝕性 金屬材料雖比陶瓷材料(含石墨)更具「可加工成型 性j及「可大量生產性」,但其抗蝕性不如常見的陶瓷材 料,以惰性金屬(Pt、An、Pd等)為例,其抗蝕性仍不及 石墨等高惰性之陶瓷材料。對於技術規袼要求十分嚴苛的 9 200823313 領域’如燃料電池金屬雙極板等,其甚至不容許有微量的 至屬離子浴出而毒化質子傳導膜及奈米級白金觸媒,因此 知用石反膜將優於氮化鈦(TiN) &其他金屬碳化物、金屬 氧化物等保4膜。所以在金屬基材表面彼覆惰性之碳膜, 即可解決金屬腐I虫的問題。 2·提升抗蝕性保護碳膜的導電性An important topic for graphite replacement materials such as wide metal bipolar plates. Therefore, the metal bipolar plate of the IJ is often coated with a titanium nitride (TiN) coating film having conductivity and resistance. However, the conductivity of TiN is not as good as that of graphite. It is necessary to plate a layer of gold (Au) or # ((1) and other noble inert metal film on the titanium nitride coating film to reduce the contact resistance of the bipolar plate, but it significantly increases the cost and cost. The metal bipolar plates of the outer layer of titanium nitride (or Nitrix/gold) are significantly higher than the original metal substrate, but still not as good as graphite. The service life of graphite bipolar plates is far more than 50 (8). Hours, but the metal substrate coated with titanium nitride/gold has a life of only about 2,000 hours. Therefore, how to improve the corrosion resistance of the metal bipolar plate without degrading its conductivity is indeed a study to improve the resistance of the metal to the surname. It has been used for a long time. In the early days, it was coated with an inert material on the surface of the metal substrate. For example, the inert metal silver (Ag), gold, pat, and (Pd) were placed on the surface of the metal substrate. In addition, # has a high conductivity, suitable for electronic components related applications. However, 'the use of these precious metals will greatly increase the cost of materials. Its: 7 200823313 Although the coated material has excellent resistance to residual characteristics' but does not have good Conductivity, for example Plasma enhanced chemical vapor deposition (PECVD) to coat diamond like carbon film (DLC film) or use high-scoring, sub-coating layer. The technology of growing carbon materials is often used in the production of carbon nanotubes (CNT) powders, carbon nanotube display panels or carbon nanotubes, such as vacuum arc method, using carbon electrodes and nickel powder. The medium is made of carbon nanotube powder, and the array recording metal crucible (thickness only 〇·〇〇3~〇·〇ι # m) is pre-made by the lithography etching technique, and then PECVD 4 'private surface (>900 ° is used) C) Catalytic growth of arrayed carbon nanotube emitter electrodes for use in flat panel applications, etc. There are also methods for depositing nanometer carbon spheres of a multi-layer graphite layer on a substrate by means of an electric clock method. One of the membrane processes is a polymer coating pyrolysis method. First, a specific polymer, such as an organic solution such as acetylenic p〇lymer φ, is coated on a metal surface, and then carbon is obtained by thermal cracking. The coating layer of 90/〇 is used to protect the metal substrate, but the film thickness of the carbon film prepared by this method is thicker than that of the chemical vapor deposition coating film, and the adhesion of the carbon film and the uniformity of the film thickness It is not as good as the chemical vapor deposition process. In addition, the process technology is as follows: firstly, the surface of the aluminum substrate is injection-molded to adhere a gas flow path of a conductive polymer composite, but the composite layer is formed by 4匕^ Because it is not completely airtight, so it can not block the corrosive environment under the condition. Therefore, the aluminum plate substrate must be coated with shellfish inertia or titanium nitride, chromium nitride (CrN), etc. 8 200823313 Layers, the process is more complicated. SUMMARY OF THE INVENTION The present invention is not capable of being carried out at a low temperature, and a carbon film having a conductive property and a high corrosion resistance is applied to the surface of the metal substrate. The object of the present invention is to provide a metal. A method for coating a carbon film on a surface of a substrate at a low temperature, which can coat the surface of the metal substrate at a low temperature, and the carbon film has a south conductivity and a surface resistance. In order to achieve the above object, the method of the present invention for low-temperature carbon film on the surface of a metal substrate comprises the following steps: preparing a metal substrate: using a metal having a softening degree higher than a reaction temperature of a subsequent carbon film coating step Pre-plated catalyst layer: a pre-plated catalyst layer with a thickness exceeding 〇〇1 # m on the surface of the metal substrate; a smectite anti-film • using a chemical vapor deposition (chemicai vap〇r deposition; CVD) process, using The carrier gas feeds the φ carbonaceous raw material into the chemical vapor deposition reaction chamber, and the carbonaceous raw material is cracked and dehydrogenated at a reaction temperature of 300 ° C to 900 ° C, and the thickness of the catalyst layer is coated on the catalyst layer. 〇·1μιη to 1〇μπι carbon film. The specific efficiencies that can be achieved by the present invention include: 1. The corrosion-resistant metal material on the surface of the metal material is more "processable and formable" and "massable" than the ceramic material (including graphite), but its corrosion resistance Inferior metals (Pt, An, Pd, etc.) are not as good as common ceramic materials, and their corrosion resistance is still less than that of highly inert ceramic materials such as graphite. For the technical regulations that are very demanding, the 2008 20081313 field, such as fuel cell metal bipolar plates, does not even allow trace amounts of ions to be ionized and poison the proton conducting membrane and nano-scale platinum catalyst. The stone anti-film will be superior to Titanium Nitride (TiN) & other metal carbides, metal oxides and the like. Therefore, the surface of the metal substrate is covered with an inert carbon film to solve the problem of metal rot. 2. Improve the conductivity of the corrosion-resistant protective carbon film

倘右披覆保護碳膜的金屬材料是用以取代商用石墨塊 材(例如用於冑M、低㉟燃料電池等能源產業),則 反膜之導包率必須大幅提升。傳統而言,玉業用碳膜常屬 :潤耗型類鑽薄膜,電氣上是屬絕緣體,目此本發明必須 提高碳膜之石墨化程度,以提升保護膜之導電率。由於物 理Λ相沈積法等製程易於生成高電阻率之類鑽膜等材料結 構,因此本發明採熱裂解型化學氣相沈積製程、電漿誘發 ,學^目沈積製程(PECVD)、及微波電漿化學氣相沈積 製私等’以k向碳膜之石墨化程度。本發明適當的於觸媒 層上面進行低長時間的化學氣相沈積製程,以成長堆積 緻密且連續性之碳膜,該碳膜之材質包含石墨、#晶碳等 尚導電性結構,因此該碳膜兼具高導電性與高抗蝕性。 3·降低碳膜所需之化學氣相反應溫度 一般而言碳纖維製程及塊材石墨化製程的熱處理溫度 均在 1000°c以上,若千蓉铋夕古它奋rL t ’凰又 右卞寻、、及之回搶度石墨材料甚至必須加 熱至2 0 0 0 °C以上並進行多攻之至、兮:灸考 — 進仃夕人之再反滲處理,本發明則採用 觸媒薄膜技術,可降低碳膜生長溫度至9〇〇它以下,以丨 於對易於高溫軟化的金屬材料實施碳膜披覆製程。 利 10 200823313 4 ·形成連續而緻密性之碳膜 傳統製作高石墨化程度的碳纖維、碳布或碳膜之势 程’通常必須加熱i 以上,如欲獲得接近純石'If the metal material coated with the carbon film on the right is used to replace the commercial graphite block (for example, in the energy industry such as 胄M and low 35 fuel cells), the guide rate of the anti-membrane must be greatly increased. Conventionally, the carbon film used in jade industry is often a run-down type diamond-like film, which is electrically an insulator. Therefore, the present invention must increase the degree of graphitization of the carbon film to improve the conductivity of the protective film. Since the process such as the physical germanium deposition method is easy to generate a material structure such as a high resistivity drill film, the pyrolysis type chemical vapor deposition process, the plasma induction process, the PECVD process, and the microwave power are used in the present invention. The degree of graphitization of the k-direction carbon film by plasma chemical vapor deposition. The present invention suitably performs a low-temperature chemical vapor deposition process on the catalyst layer to grow a dense and continuous carbon film, and the material of the carbon film includes a conductive structure such as graphite or #crystalline carbon. The carbon film combines high electrical conductivity with high corrosion resistance. 3. The chemical vapor phase reaction temperature required to reduce the carbon film Generally, the heat treatment temperature of the carbon fiber process and the block graphitization process are above 1000 ° C. If the thousand 铋 铋 古 古 古 it r r r And, the grazing graphite material must even be heated to above 2000 °C and carry out multiple attacks, 兮: moxibustion test - re-infiltration treatment of the 仃 仃 人 person, the present invention uses catalytic thin film technology The carbon film growth temperature can be lowered to below 9 , to perform a carbon film coating process on a metal material which is easy to be softened at a high temperature.利 10 200823313 4 ·Formation of a continuous and dense carbon film The traditional process of producing a highly graphitized carbon fiber, carbon cloth or carbon film 'often must be heated above i, if you want to get close to pure stone'

的材料’則需力D i 1800t以上’而且這類材料都具空洞 孔隙’無法形成連續而緻密性之碳膜。至於奈米碳管等材 料雖亦可具備高石墨化程度,但其為堆疊蓬鬆之細管狀粉 體^料,亦不易在金屬表面成長緻密之碳膜,因此抗姓性 不佳。本發明係於金屬基材表面預鍍適當厚度的特定金屬 觸媒層爾後採用低氣相沈積製程,因此可以生長連續 而緻逾、之南抗餘性碳膜。 【實施方式】 清筝照第一圖所示,本發明於金屬基材表面低溫披覆 碳膜之方法係包括以下步驟: 準備金屬基材:選用軟化度高於後續披覆碳膜步驟 之反應度的金屬為基材;由於本發明的披覆碳膜步驟的 理想反應度為300°C至900°C間,因此必須選用軟化 度高於在該製程溫區的金屬為基材,如不銹鋼、鎳合金、 平碳鋼、鋁合金、銅合金以及鈦合金等。 預鍍觸媒層:於金屬基材表面預鍍厚度超過〇 〇1 # m 之觸媒層;為了在較低的化學氣相反應溫度成長高石墨化 私度之石反膜,必須使用適當的薄膜觸媒技術,研究發現鎳 (Ni )、姑(c〇 )、鐵(Fe )、鉑(pt) 、|巴(pd )、銀 (Ag )等過渡金屬及其合金具有催化碳膜「石墨化」的效 果’因此在金屬基材表面預鍍此類金屬觸媒層後,可顯著 11 200823313 降低後續被覆高石墨化碳膜步驟所需之 份之外,觸媒層的厚度亦顯著影二:1 了合金成 媒層的厚度小於〇.〇1心時,易造成孤^膜形態,當觸 爾後的化學氣相沈積製程 島狀的觸媒顆粒’ 等碳材而不易形成連續性二::=狀或獨立球體 於〜’只要不剝落,觸媒二: 觸媒層之鍵膜方式則可採用蒸鑛、賤鑛大至數心。 製程技術。 包鍍、無電鍍等 披覆碳膜:利用…相沈積(― 聰;㈣)製程,使用承載氣體(咖 p 含碳原料送人化學氣相沈積反應腔體,使含碳原料在反岸 溫度3,C至幫間裂解脫氯,而於觸媒層上披覆厚: 為〇加i 1()μιη之碳膜;碳膜厚度太薄無法阻絕腐㈣ 境,太厚則碳膜容易產生龜裂。 本發明採用化學氣相沈積技術而不採用物I氣相沈積 製私(PVD )’其原因是後者易於生成低導電度的類鑽結 構。本發明所採用的化學氣相沈積製程可為商用上常見的 熱裂解型化學氣相沈積法(thermally decomposed chemical vapor deposition )、電漿誘導型化學氣相沈積法(plasma enhanced chemical vapor deposition ·’ PECVD)或微波化學 氣相沈積法( microwave chemical vapor deposition)等製 程。 至於化學氣相沈積製程所通入的含碳原料為具有低溫 裂解脫氫特性之氣體、液體或固體等,氣體如曱烷(CH4 )、 12 200823313 w(C2H2)、乙烯(㈣)等’液體如甲醇(CH0H)、 乙轉(c2H5〇H)等’固體如石徵、掉二 必須使用承载氣體^心⑽…^叙原料 ^ ^ Φ ... 、化學氣相沈積反應腔 把之中’所使用的承載氣體可為氬 笪降从-遞/ 風乳(Ar)、氧氣(He) (lneri gas)、或氮氣(N2)、氫氣(H )、 氨氣(NH3 )等還原性氣體。適 2 〜田的含石反原料與承載氣體 的配比可獲得較佳之石墨化程度, ^ . y , ^ M乙炔和虱氣的混合氣 肢為例,體積濃度比值小到0.015而高到純C2H2,皆可# 高程度(〇)的碳膜,較佳的是乙炔嫩 的體積》辰度比為〇 · 〇 1 5至15間。下★士 、 間下式中,R值是拉曼光譜 儀(Ramanspectrometer)所測得之石墨化程度的指標值, R值為零則石墨化程度達⑽%,R值越大則石墨化程度越 R = RD/RG, 其中RD為拉曼光譜圖D-band的積分度;而rg為 拉哭光禮圖G-band的積分度。 上述含碳原料與承載氣體之濃度比例雖然改變,但總 氣體分壓仍維持略大於latm,因此這些混合氣體在化學氣 相沈積製程中是以恆定流率流過反應腔體。本發明化學氣 相沈積製程之總工作氣壓為1X 10-3torr至760t〇rr,本發明 發現’倘若使用真空抽氣系統將反應腔體内的混合氣體之 總氣壓降低至l0-2_10-3t〇rr (混合氣體之濃度比值維持不 13 200823313 交),則碳膜製程的反應度約可降低1 〇(Tc。 本發明使用的含碳原料可以混入特定之過渡金屬化合 物以適度改變碳膜中特定金屬元素的含量,進而調整碳 膜的導電率及機械性質等。這些過渡金屬化合物可為四^ 鈦("Π(ΝΗ2)4 )、四氣化鈦(Tici4)、六幾化|目(m〇(co)6)、 六羰化鎢(W(C0)6)、六羰化鉻(cr(co)6)及其他常見 的金屬化合物等C> 下列實施例用於示範說明本發明,而不意欲以任何方 式限制本發明的範圍。 實施例一 本實施例是選用AISI 304不銹鋼做為金屬基材,金屬 基材預先濺鍍不同膜厚之Ni觸媒層(0·4μιη至0·8 , 後進行熱4解型化學氣相沈積法,其熱處理製程之時間 :溫度關係如第二圖所示。首先管式化學氣相沈積爐抽真 二至10 torr ,其次在6〇分鐘之内升至700°c,期間反 [如必須抽真空亚通入latm氬氣,氬氣並以ι〇〇π㈣ (ndard cubic centimeter per minute )流率流出反應器; 反應器隨後在Utm氫氣之保護氣氛下進行i小時還原活 化熱處理,虱氣並以2〇〇 sccm流率流出反應器;最後反應 器通入總氣壓為1伽的3。%乙炔和66vol%氫氣之混 合氣體,進行3小時的化學氣相沈積製程。 反應完成後,關閉氫氣與乙快,並先通入氮氣l〇〇sccm 14 200823313 稀釋反應性c體以中止後續化學氣相沈積反應,並且防止 问’皿虱化產生’反應器冷卻至室溫後將其試片取出。這些 披覆:胰之試片採用四點探針法測量其片電阻值,並將數 值列方、表,肖用石墨塊材與未鐘碳膜之不錄鋼基材之 片電阻值亦列在表―,供對照比較。 " —比較 試片 片電阻值 ~~~---~Λΐ^ΐΩ/cm2 ) 不銹鋼7鎳層(〇·4μιη) /碳膜 (1 ·5μηι ) 4.805 不銹鋼/鎳層(〇·6μηι) /碳膜 (1 ·5μηι ) 4.901 不銹鋼/鎳層(〇·8μιη) /碳膜 (1.5μιη) 5.304 4.746 6.220 +銹鋼基材 商用石墨塊材 由表一可知,鍍碳不銹鋼基材的 鋼基材相f,提高鎳鍍層厚度會微幅 山幾乎與不銹 然可保有高導電 片電阻值,但仍低於商用石墨塊材,I、^不鎊鋼板的 法在不銹鋼基材表面彼覆碳膜後, 彳用本赉明之方 性 其導電性甚至較商用石墨材料為佳。 實施例二 15 200823313 本貝%例是在AISI 304不銹鋼基材預先濺鍍厚度〇.4 μηι的Νι觸媒層,爾後進行熱裂解型化學氣相沈積製程, 仁奴膜疋在6個不同的反應溫度進行沈積(5〇(rc、6〇〇〇c、 65〇°C、7〇〇°C、750°C、8〇〇。(:),化學氣相沈積反應氣氛 為60 v〇l%乙炔和4〇 v〇1%氫氣之混合氣體,沈積時間為3 J % 所得之碳膜試片進行光學顯微組織觀察。由觀察的 結果可知,碳膜之表面形態深受反應度等化學氣相沈積 條件之影響,當反應度為500Ϊ時,堆積在不銹鋼表面 之碳材疏鬆而未成膜。當反應度升至60(rc時,沈積之 碳層雖已成平整形態,惟並非連續性薄膜,就微觀而言, 有邛伤金屬表面未被碳膜遮蔽。當反應度在650°C〜700 °C度區域時,連續性碳膜則均勻平整的生長在鍍有鎳觸 媒層的不銹鋼試片上面。當反應度增至750°C,則碳膜 產生龜裂。當反應度高達800。(:時,則碳膜由不鏽鋼基 板剝離。 實施例三 本實施例是在兩片不銹鋼基材使用熱裂解型化學氣相 沈積法彼覆碳膜,其中一片不銹鋼基材預先濺鍍〇·6 ^瓜膜 厚之Νι觸媒層,另一片不銹鋼基材則未預鍍觸媒層,沈 積碳膜的反應溫度是70(rc,反應氣氛為5〇v〇1%乙炔和 50vol%氫氣之混合氣體,碳膜沈積時間為3小時。最後使 用恆定電位儀測量試片的腐蝕速率,電解液為〇·5μ之 16 200823313 Η风水溶液,參考電極採用a—, 掃描電位範圍為-0.6 v至 ^ ^ 極為Pt, 得之極化曲線如第三圖所示“速度是1〇·,所 當碳膜直接沈積在不銹鋼基材時(未 ^似〇,則後續化學氣相沈積製程所生長的石^!二 孔隙的碳材堆積而成,並無_得連續性的披覆碳膜,二 此酸液會滲人碳臈下而接觸到不錢鋼基材,故^抗 不:圭’其广線顯示典型之金屬性腐姓行為(塔弗:為; ltd腐姓電位約為WV。利㈣㈣合電 ,κλ.Μ (Inductively 〇〇upled plasma Spectr〇meter , ICp. MS)分析已進行完腐㈣試之A%水溶液所溶入的金屬 元素含量,發現不鏽鋼基板有的鐵(Fe)、鉻、鎳 ⑽等元素詩H2S〇4水溶液,而彼覆碳膜的不Γ銹鋼基 板及商用石墨(Poco AXF_5QCF)均無金屬元素溶入Η抓 水溶液的現象,如表二所示。 口口表一、完成腐餘測試之H2S〇4水溶液的金屬元素含量 (單位:ppm )The material 'requires a force D i 1800t or more' and these materials have voids and pores' cannot form a continuous and dense carbon film. As for the carbon nanotubes and other materials, although they can also have a high degree of graphitization, they are stacked fluffy thin tubular powders, and it is not easy to grow a dense carbon film on the metal surface, so the resistance to the surname is not good. The invention adopts a low-vapor deposition process after pre-plating a specific metal catalyst layer of a proper thickness on the surface of the metal substrate, so that a continuous and resistant south carbon residual carbon film can be grown. [Embodiment] As shown in the first figure, the method of the present invention for coating a carbon film on a surface of a metal substrate at a low temperature comprises the following steps: preparing a metal substrate: a reaction having a softening degree higher than that of a subsequent coated carbon film step The metal is a substrate; since the ideal reaction degree of the carbon film coating step of the present invention is between 300 ° C and 900 ° C, it is necessary to select a metal having a higher softness than the temperature in the process temperature, such as stainless steel. , nickel alloy, flat carbon steel, aluminum alloy, copper alloy and titanium alloy. Pre-plating catalyst layer: pre-plating a catalyst layer with a thickness exceeding 〇〇1 # m on the surface of the metal substrate; in order to grow a high-graphitization private stone anti-film at a lower chemical vapor reaction temperature, it is necessary to use an appropriate Thin film catalyst technology, found that nickel (Ni), gu (c), iron (Fe), platinum (pt), | bar (pd), silver (Ag) and other transition metals and their alloys have a catalytic carbon film "graphite Therefore, after pre-plating such a metal catalyst layer on the surface of the metal substrate, it is remarkable that the thickness of the catalyst layer is significantly reduced in addition to the portion required for the subsequent step of coating the highly graphitized carbon film. :1 When the thickness of the alloy-forming layer is less than 〇.〇1, it is easy to cause the shape of the membrane. When the catalyst is formed by the chemical vapor deposition process, the island-like catalyst particles are not easy to form continuity: := Shape or independent sphere in ~ ' As long as it does not peel off, catalyst 2: The membrane film of the catalyst layer can be used for steaming ore and strontium ore. Process technology. Coating, electroless plating, etc. coated carbon film: using ... phase deposition (― 聪; (d)) process, using carrier gas (coffee p carbon-containing raw materials to send chemical vapor deposition reaction chamber, so that carbon-containing raw materials in reverse shore temperature 3, C to cleavage dechlorination, and coating on the catalyst layer thick: for the addition of i 1 () μιη carbon film; carbon film thickness is too thin to resist rot (four), too thick carbon film is easy to produce The present invention adopts a chemical vapor deposition technique instead of the vapor deposition (PVD) of the material I because the latter is easy to generate a low-conductivity diamond-like structure. The chemical vapor deposition process used in the present invention can be It is a commercially available thermal decomposed chemical vapor deposition, plasma enhanced chemical vapor deposition (PECVD) or microwave chemical vapor deposition (microwave chemical vapor deposition). Vapor deposition, etc. The carbonaceous raw material introduced into the chemical vapor deposition process is a gas, a liquid or a solid having a low-temperature cracking dehydrogenation property, and a gas such as decane (CH4), 12 2008 23313 w(C2H2), ethylene ((iv)), etc. 'Liquid such as methanol (CH0H), E-trans (c2H5〇H), etc. 'Solids such as stone signs, and two must use carrier gas ^10 (...) ^^ Raw materials ^ ^ Φ . .. , in the chemical vapor deposition reaction chamber, the carrier gas used may be argon-helium drop-delivery/arc (Ar), oxygen (He) (ln), or nitrogen (N2), hydrogen ( H), ammonia gas (NH3) and other reducing gases. The ratio of the stone-containing anti-feedstock to the carrier gas of 2 to the field can obtain a better degree of graphitization, ^. y , ^ M mixed gas of acetylene and helium For example, the volume concentration ratio is as small as 0.015 and high to pure C2H2, both of which can be high (〇) carbon film, preferably the volume of acetylene is “》 〇 〇 5 5 5 5 下 下 下 下 下 下 下 下 下In the ± and sub-forms, the R value is the index value of the degree of graphitization measured by the Raman spectrometer. When the R value is zero, the graphitization degree is (10)%. The larger the R value, the more the graphitization degree is. = RD/RG, where RD is the integral of the D-band of the Raman spectrum; and rg is the integral of the G-band of the crying ritual. The above carbonaceous material and carrier gas Although the concentration ratio changes, the total gas partial pressure is still slightly larger than lamm, so these mixed gases flow through the reaction chamber at a constant flow rate in the chemical vapor deposition process. The total working pressure of the chemical vapor deposition process of the present invention is 1X 10-3torr to 760t〇rr, the present invention finds that 'if the vacuum pumping system is used, the total gas pressure of the mixed gas in the reaction chamber is reduced to l0-2_10-3t〇rr (the concentration ratio of the mixed gas is maintained at 13 200823313) ), the reactivity of the carbon film process can be reduced by about 1 〇 (Tc). The carbonaceous material used in the present invention may be mixed with a specific transition metal compound to appropriately change the content of a specific metal element in the carbon film, thereby adjusting the conductivity and mechanical properties of the carbon film. These transition metal compounds may be tetra-titanium ("Π(ΝΗ2)4), tetra-titanized titanium (Tici4), hexa-chemical (m〇(co)6), tungsten hexahydrate (W(C0)) 6), chromium hexacarbonyl (cr(co)6) and other common metal compounds, etc. C> The following examples are intended to illustrate the invention and are not intended to limit the scope of the invention in any way. Embodiment 1 In this embodiment, AISI 304 stainless steel is selected as the metal substrate, and the metal substrate is sputtered with different thicknesses of Ni catalyst layer (0·4μιη to 0·8, followed by thermal 4 decomposing chemical vapor deposition). Method, the time of the heat treatment process: the temperature relationship is as shown in the second figure. First, the tubular chemical vapor deposition furnace draws two to 10 torr, and then rises to 700 °c within 6 minutes, during the period [if necessary Vacuuming the sub-pass into lat argon, argon and flowing out of the reactor at a flow rate of nd cubic ( (d) (nd) cubic centimeter per minute; the reactor is then subjected to a reduction-activation heat treatment for 1 hour under the protective atmosphere of Utm hydrogen, helium gas and The reactor was discharged at a flow rate of 2 〇〇sccm; finally, the reactor was passed through a mixed gas of 3% acetylene and 66 vol% hydrogen at a total pressure of 1 gal, and a chemical vapor deposition process was carried out for 3 hours. After the reaction was completed, the hydrogen was turned off. Fasten with B, and first pass nitrogen gas 〇〇sccm 14 200823313 Dilute the reactive c body to stop the subsequent chemical vapor deposition reaction, and prevent the reactor from being cooled. These drape: pancreas The test piece is measured by the four-point probe method, and the resistance values of the column, the table, the graphite block and the non-recorded carbon film of the non-recorded carbon film are also listed in the table. Comparison. " —Compared test piece resistance value~~~---~Λΐ^ΐΩ/cm2) Stainless steel 7 nickel layer (〇·4μιη) / carbon film (1 ·5μηι ) 4.805 Stainless steel/nickel layer (〇·6μηι ) / carbon film (1 · 5μηι ) 4.901 stainless steel / nickel layer (〇 · 8μιη) / carbon film (1.5μιη) 5.304 4.746 6.220 + stainless steel substrate commercial graphite block from Table 1, the steel coated carbon stainless steel substrate Substrate phase f, increase the thickness of the nickel plating layer, the micro-mountain almost and stainless can retain the high conductive sheet resistance value, but still lower than the commercial graphite block, I, ^ not pound steel plate method on the surface of the stainless steel substrate After the carbon film, it is better to use the conductivity of the present invention than the commercial graphite material. Example 2 15 200823313 This example is a pre-sputtering Ν.4 μηι Νι catalyst layer on an AISI 304 stainless steel substrate, followed by a thermal cracking chemical vapor deposition process, and the Renlu membrane is in 6 different The reaction temperature is deposited (5 〇, rc, 6 〇〇〇 c, 65 〇 ° C, 7 〇〇 ° C, 750 ° C, 8 〇〇. (:), the chemical vapor deposition reaction atmosphere is 60 v〇l The carbon film obtained from the mixture of % acetylene and 4〇v〇1% hydrogen was deposited at a rate of 3 J %. The results of the observation showed that the surface morphology of the carbon film was deeply affected by the reactivity and other chemistry. Under the influence of vapor deposition conditions, when the reactivity is 500 ,, the carbon material deposited on the surface of the stainless steel is loose and not formed. When the degree of reaction rises to 60 (rc, the deposited carbon layer has a flat shape, but is not continuous. The film, microscopically, has a scratched metal surface that is not obscured by the carbon film. When the reactivity is in the range of 650 ° C to 700 ° C, the continuous carbon film is uniformly and evenly grown on the nickel-plated catalyst layer. On the stainless steel test piece. When the degree of reaction is increased to 750 ° C, the carbon film is cracked. When the reaction The degree is as high as 800. (: When the carbon film is peeled off from the stainless steel substrate. Embodiment 3 This embodiment is to use a thermal cracking type chemical vapor deposition method on a two-piece stainless steel substrate, and a piece of stainless steel substrate is splashed in advance. The ruthenium plating layer of the ruthenium coating is 6 ruthenium, and the other stainless steel substrate is not pre-plated with the catalyst layer. The reaction temperature for depositing the carbon film is 70 (rc, the reaction atmosphere is 5 〇v 〇 1% acetylene and 50 vol The mixture of hydrogen gas and carbon film deposition time is 3 hours. Finally, the corrosion rate of the test piece is measured by a constant potential meter, the electrolyte is 〇·5μ16, 200823313 hurricane aqueous solution, the reference electrode is a-, the scanning potential range is - 0.6 v to ^ ^ is extremely Pt, and the polarization curve is as shown in the third figure. “The speed is 1〇·, when the carbon film is directly deposited on the stainless steel substrate (not like 〇, the subsequent chemical vapor deposition process) The grown stone ^! two pores of carbon material are piled up, there is no continuous coating of carbon film, and the acid will infiltrate the carbon under the sputum and contact the steel substrate, so : 圭's wide line shows the typical metallic sexual rot behavior (Taver: for; ltd The surname potential is about WV. Li (4) (4), κλ.Μ (Inductively 〇〇upled plasma Spectr〇meter, ICp. MS) analysis of the metal element content of the A% aqueous solution that has been subjected to the rot (4) test, and the stainless steel substrate is found. Some iron (Fe), chromium, nickel (10) and other elements of the poem H2S〇4 aqueous solution, while the carbon film of the non-rust steel substrate and commercial graphite (Poco AXF_5QCF) are free of metal elements dissolved into the aqueous solution, such as Table 2 shows the content of metal elements in H2S〇4 aqueous solution (unit: ppm)

不銹鋼 不鎮鋼 /鎳(〇·6μιη ) /碳(1 ·5μηι ) 墨 POCO AXF-5QCF … CrStainless steel not steel / nickel (〇·6μιη) / carbon (1 ·5μηι ) ink POCO AXF-5QCF ... Cr

1.725 nil nil *感應搞合電槳光譜儀已無法偵測到該元素之光譜訊 倘若不銹鋼基材先鍍厚度0.6# m的鎳觸媒層,再進 17 200823313 行化學氣相沈積製程(即試片ss/06#mNi/c),則會生 長連績而緻密的碳膜,極化曲線已不具典型之金屬腐敍行 為:腐蝕電位並不存在,而其反應電流十分微弱,僅為 .1〇 A/Cm2的等級,電流值不論在低電位或高電位均呈定 •值,此訊號是氫離子在碳膜表面的吸附以及脫附反應所產 生的電流,並非金屬腐姓所造成的。分析已完成腐姓測試 ^ H2so4水溶&,發現並無金屬離子溶於腐餘液中,顯示 籲碳膜並未受到腐钱液的腐钱穿透,對不銹鋼表面的被覆保 持連續性與緻密性。此一極化曲線與商用石墨塊材(廢牌 poco,型號AXF_5QCF)的極化曲線相似,在至+ i麟 的掃描電位區間,i雷法Μ + #、匕_ ^ 八书机值亦接近寺定值,顯示試片表面 的%I 已具有與石墨近乎相等的抗蝕性。 實施例四 • 本實施例是在地购碳鋼(以-〇.4〇 wt% C)基材 上預先濺鐘不同膜厚之鎳觸媒層(〇4_ i Ο.— ),爾 後進行熱裂解型化學氣相沈積製程,碳膜的反應溫度是85〇 ^沈積時間為3小時,反應氣氛則為不同比例之甲烧和 2氣及f :¾和氬氣等混合氣體’所得之碳膜試片則使用拉 曼光譜儀(R嶋nspectr〇mete〇測量其石墨化程度,顯示 化學氣相沈積製程參數碳膜之石墨化程度(r幻影響甚 大,如表三所示。 由表三中數據得知,反應氣體的氣氛和觸媒鍵層的厚 18 200823313 度影響碳膜之石墨化程度甚巨,反應氣體採用甲烷和氫氣 的混合乳優於甲统和氬氣的混合氣(R值較小),所採用 取佳的氣體混合比例為33% f烧& 67%氫氣時,試片所測 得的R值接近令(〇 〇6〜〇1〇 ),可知碳膜之石墨化程度接 近 100% 〇 表三、在不同厚度的鎳層上沉積碳膜,並使用拉曼光譜儀 測里其石墨化程唐(p/古、 C:rfc 不度值),反應溫度為85(TC,反應時 間為3小時1.725 nil nil *Inductive electrospinning spectrometer has been unable to detect the spectral information of this element. If the stainless steel substrate is first plated with a 0.6# m nickel catalyst layer, then proceed to 17 200823313 for chemical vapor deposition process (ie test piece) Ss/06#mNi/c) will produce a dense and dense carbon film. The polarization curve has no typical metal rot behavior: the corrosion potential does not exist, and its reaction current is very weak, only .1〇 The level of A/Cm2, the current value is constant at any low or high potential. This signal is the current generated by the adsorption and desorption reaction of hydrogen ions on the surface of the carbon film, not caused by the metal rot. Analysis of the completed surname test ^ H2so4 water soluble &; found that no metal ions dissolved in the residual liquid, showing that the carbon film is not penetrated by the rot money, the coverage of the stainless steel surface to maintain continuity and compact Sex. This polarization curve is similar to the polarization curve of commercial graphite block (waste brand poco, model AXF_5QCF). In the scanning potential range to + i lin, i Leifa Μ + #, 匕 _ ^ eight book values are also close The temple setting shows that the %I of the surface of the test piece has almost the same corrosion resistance as graphite. Embodiment 4 • In this embodiment, a nickel catalyst layer of different film thickness (〇4_i Ο.-) is pre-splashed on a commercially available carbon steel (by -4. wt% C) substrate, and then heat is applied. In the pyrolysis chemical vapor deposition process, the reaction temperature of the carbon film is 85 〇, the deposition time is 3 hours, and the reaction atmosphere is a carbon film obtained by mixing gases of different ratios of methyl and 2 gas and f: 3⁄4 and argon. The test piece was measured by Raman spectrometer (R嶋nspectr〇mete〇), and the degree of graphitization of the carbon film of the chemical vapor deposition process parameter was shown (the effect of r is very large, as shown in Table 3. The data in Table 3 It is known that the atmosphere of the reaction gas and the thickness of the catalyst bond layer 18 200823313 degree influence the degree of graphitization of the carbon film is very large, and the mixed gas of methane and hydrogen is better than the mixed gas of the system of argon and argon. Small), the preferred gas mixing ratio is 33% f burning & 67% hydrogen, the R value measured on the test piece is close to the order (〇〇6~〇1〇), the degree of graphitization of the carbon film is known. Nearly 100% 〇 Table 3. Depositing carbon films on nickel layers of different thicknesses and using Raman spectroscopy Measured in graphitization processes Tang (p / Gu, C: rfc no value), the reaction temperature was 85 (TC, the reaction time was 3 hours

試片 vol% ) 5〇 CH4-50 Ar 33 CH4-67 Ar 33 CH4-67 H2 5〇 CH4_50 Ar 33 CH4-67 Ar 11^CIV67 1.11 1.01 0.06 1.06 0.80 0.10 碳鋼 / 鎳(0.4//m) /碳(15//m) 碳鋼 /錄(〇·4// m) /碳(15// m) 碳鋼 / 鎳(0.4/zrn) /碳(l5//m) 碳鋼/鎳(i.o#m) /碳(15#m) 碳鋼/鎳(1·〇# m) /碳(15#瓜)Test piece vol%) 5〇CH4-50 Ar 33 CH4-67 Ar 33 CH4-67 H2 5〇CH4_50 Ar 33 CH4-67 Ar 11^CIV67 1.11 1.01 0.06 1.06 0.80 0.10 Carbon steel / nickel (0.4//m) / Carbon (15//m) Carbon steel/recorded (〇·4// m) / carbon (15// m) Carbon steel / nickel (0.4/zrn) / carbon (l5//m) Carbon steel / nickel (io #m) /carbon (15#m) carbon steel / nickel (1·〇# m) / carbon (15# melon)

: ΓΤ ~~ ~_\L u ^拉曼光譜圖的積分度 g為拉哭光譜圖G-band的積分声 、 膜的石愛儿如命&山 度,R值越低代表碳 胲的石墨化程度越向,當R值接 100%的石墨化。 、於零日守,代表碳膜接近 為成長碳膜的氣源時, 顯示碳膜中的石墨含量 媒層較厚的試片(1·0/Ζ 當使用曱烷和氬氣混合氣體做 所測得的R值可增大至1 ·〇以上, 漸^ ’非晶碳等結構增多,而鎳觸 19 200823313 m Nl )其石墨化程度亦優於鎳觸媒層較薄的試片(0·4 // m N〇 。由本實施例可說明藉由化學氣相沈積製程參數的 最佺化,可製作高石墨化程度的碳膜,因而改善破膜的導 電率及接觸電阻等電氣特性。將反應氣體的成份配比最佳 化後’可得到接近100%石墨化程度之碳膜(即R值接近 零值)。 【圖式簡單說明】 $ —圖係為本發明之流程圖。 第二圖係為本發明實施例一之熱處理流程圖。 第二圖係為本發明實施例三之極化曲線圖。 【主要元件符號說明】 益 20: ΓΤ ~~ ~_\L u ^The integral degree of the Raman spectrum is the integral sound of the G-band of the crying spectrum, the stone of the membrane is like the life & mountain, the lower the R value is the carbon 胲The degree of graphitization is more, when the R value is 100% graphitized. When the carbon film is close to the gas source of the growing carbon film, the test piece showing a thick graphite layer in the carbon film is displayed (1·0/Ζ when using a mixture of decane and argon gas) The measured R value can be increased to more than 1 · ,, and the structure of the amorphous carbon is increased, while the nickel touch 19 200823313 m Nl ) is also superior to the thinner test piece of the nickel catalyst layer (0 4 / 4 m N. From the present embodiment, it can be explained that the carbon film having a high degree of graphitization can be produced by the finalization of the chemical vapor deposition process parameters, thereby improving electrical properties such as electrical conductivity and contact resistance of the film. After optimizing the composition ratio of the reaction gas, a carbon film close to 100% graphitization can be obtained (that is, the R value is close to zero value). [Simple description of the drawing] $ - The figure is a flow chart of the present invention. 2 is a heat treatment flow chart of the first embodiment of the present invention. The second figure is a polarization curve of the third embodiment of the present invention. [Description of main component symbols]

Claims (1)

200823313 十、申請專利範圍: 1 · 一種於金屬基材表面低溫披覆碳膜之方法,其係 包括以下步驟: 準備金屬基材:選用軟化度高於後續彼覆碳膜步驟 之反應溫度的金屬為基材; 預鍍觸媒層·於金屬基材表面預鐘厚度超過m 之觸媒層; 披覆碳膜:利用化學氣相沈積(chemical vapor deposition ; CVD )製程,使用承載氣體(carrier gas)將 含碳原料送入化學氣相沈積反應腔體,使含碳原料在反應 溫度300°C至900°C間裂解脫氫,而於觸媒層上披覆厚度 為Ο.ΙμίΉ至ΙΟμιη之碳膜。 2 ·如申請專利範圍第1項所述之方法,其中的化學 氣相沈積製程係為熱裂解型化學氣相沈積法( decomposed chemical vapor deposition ) 〇 3 ·如申請專利範圍第i項所述之方法,其中的化學 氣相沈積製程係為電漿誘導型化學氣相沈積法(plasma enhanced chemical vapor deposition ) o 4 ·如申請專利範圍第i項所述之方法,其中的化學 氣相沈積製程係為微波化學氣相沈積法(microwave chemical vapor deposition)。 5 ·如申請專利範圍第1項所述之方法,其中的金屬 基材係選自於由不銹鋼、鎳合金、平碳鋼、鋁合金、鋼合 金以及鈦合金所組成之群組。 21 200823313 如申請專利範圍第丄項 層材料係選自於㈣(NiWi(c^ =二其中的觸媒 鈀(P〇 、釦, )、鐵(Fe )、麵(Pt )、 7 · / (Ag)以及其合金所組成之群組。 σ申請專利範圍第^ 層預鑛方式係為蒸鍍。 μ之方法’其中的觸媒 8如申請專利範圍第1項所述之方法,1φ 層預鍍方式係為賤鍍。 以#中的觸媒 9如申請專利範圍第1項所述之方、、# 層預鐘方式係為電錢。 “之方法,其中的觸媒 10 .如申請專利範圍第i 媒層蘭方式係為無電I 11·如申請專利範圍第工項所述之方法,盆中於披 後㈣步驟前先進行氫氣還原活化觸媒層。 12 ·如申請專利範圍第1項所述之方法,並中的含 碳原:料係選自於由甲燒(ch4)、乙炔(c2h2)、乙稀⑷H4)、 甲% ( CH30H )、乙醇(c2H5〇h )、石虫鼠以及樟腦所組成 之群組。 •如申請專利範圍第1項所述之方法,其中的承 載氣體係選自於由嘉盏/ττ、 卜 、田虱乳(Ar)、氦氣(He)、氮氣(ν2)、 氫氣(Η2)、氨& (則3)以及其混合氣體。 1 4 ·如申請專利範圍第1項所述之方法,其中於含 碳原料中混合有過渡金屬化合物,過渡金屬化合物係選自 於由四氨化鈦(T^NH2)4)、四氯化鈦(Ticl4)、六羰化 鉬(Mo(CO)6)、六羰化鎢(w(c〇)6 )或六羰化鉻(Cr(c〇)6 )。 22 200823313 ,1 5 ·如申請專利範圍第i項所述之方法,其中的化 子氣相沈% 4程之總工作氣壓為k…气㈣至76〇t〇rr。 16如申請專利範圍第2項所述之方法,其中的承 載氣體係為氫氣。 如申凊專利範圍第1 6項所述之方法,其中的 含碳原料係為甲燒。 1 8 ·如申請專利範圍第丄7項所述之方法,其中 曱烧與氫氣的體積濃度比例為33%甲烧與67%氯氣。 9如申請專利範圍第1 8項所述之方法,直中的 披覆碳膜步驟之浐社s _ 。 ,、甲的 〈取佳反應溫度為800 C至90〇°c。 2 〇 ·如申請專利範圍第1 g項所述之方法 金屬基材係為不銹鋼。 2 1如申請專利範圍第2 0項所述之方法 觸媒層材料係為鎳。 2 2 ·如申請專利範圍第i 6項所述之 含碳原料係為乙炔。 无 3如申睛專利範圍第2 2項所述之方 乙炔與氫氣的體 檟,辰度比為0·01 5至1 5間。 ^ 4⑹申請專利範圍第2 3項所述之方法 錢膜步驟之最佳反應溫度為喊至75吖。 全屬1:孫1°申請專利範圍第2 4項所述之方法 至屬基材係為不銹鋼。 趨」6 .如申請專利範圍第25項所述之方、去 觸媒層材料係為鎳。 方去 其中的 其中的 其中的 其中的 其中的 其中的 其中的 23200823313 X. Patent application scope: 1 · A method for coating a carbon film on a surface of a metal substrate at a low temperature, comprising the steps of: preparing a metal substrate: selecting a metal having a softening degree higher than a reaction temperature of the subsequent carbon film step a substrate; a pre-plated catalyst layer; a catalyst layer having a thickness of more than m on the surface of the metal substrate; a coated carbon film: using a chemical vapor deposition (CVD) process, using a carrier gas The carbonaceous raw material is sent to the chemical vapor deposition reaction chamber, and the carbonaceous raw material is cracked and dehydrogenated at a reaction temperature of 300 ° C to 900 ° C, and the thickness of the catalyst layer is Ο.ΙμίΉ to ΙΟμιη Carbon film. [2] The method of claim 1, wherein the chemical vapor deposition process is a decomposed chemical vapor deposition process, as described in claim i. The method wherein the chemical vapor deposition process is plasma enhanced chemical vapor deposition o 4 · the method of claim i, wherein the chemical vapor deposition process system It is a microwave chemical vapor deposition. 5. The method of claim 1, wherein the metal substrate is selected from the group consisting of stainless steel, nickel alloy, flat carbon steel, aluminum alloy, steel alloy, and titanium alloy. 21 200823313 The material of the second layer of the patent application is selected from (4) (NiWi (c^ = two of the catalyst palladium (P〇, deduction, ), iron (Fe), surface (Pt), 7 · / ( Group of Ag) and its alloys. σ Application for the scope of the first layer of pre-mineralization is vapor deposition. μ method 'in which the catalyst 8 is as described in claim 1 of the patent scope, 1φ layer pre- The plating method is ruthenium plating. The catalyst 9 in #, as described in the first paragraph of the patent application scope, and the # layer pre-clock method are electric money. "The method, wherein the catalyst 10. If applying for a patent The range i-th layer blue mode is no electricity I 11 · As described in the patent application scope, the hydrogen reduction and activation catalyst layer is carried out in the pot before the step (4). 12 · If the patent application scope is 1 The method described in the above, wherein the carbonaceous material: is selected from the group consisting of a burnt (ch4), an acetylene (c2h2), an ethylene (4) H4), a methyl (CH30H), an ethanol (c2H5〇h), a stone insect. A group consisting of a rat and a camphor. The method of claim 1, wherein the carrier gas system is selected from the group consisting of盏/ττ, 卜, 虱 虱 (Ar), helium (He), nitrogen (ν2), hydrogen (Η2), ammonia & (then 3) and their mixed gases. 1 4 · If the scope of patent application is 1 The method according to the invention, wherein a transition metal compound is mixed in the carbonaceous raw material, and the transition metal compound is selected from titanium tetrachloride (T^NH2) 4), titanium tetrachloride (TiCl4), and molybdenum hexahydrate. (Mo(CO)6), tungsten hexahydrate (w(c〇)6) or chromium hexacarbonyl (Cr(c〇)6). 22 200823313 , 1 5 · as described in item i of the patent application The method wherein the total working pressure of the gas phase of the gas phase is from k... gas (4) to 76 〇t〇rr. The method of claim 2, wherein the carrier gas system is hydrogen. The method of claim 16, wherein the carbonaceous material is a methane. 1 8 · The method of claim 7, wherein the volume concentration ratio of xenon to hydrogen is 33. % A burnt with 67% chlorine. 9 As described in the patent scope of item 18, the straight-through coating of the carbon film step 浐 _ _, A, the preferred reaction temperature is 800 C 90 〇 °c. 2 〇 · The method of claim 1 g of the metal substrate is stainless steel. 2 1 The method of the catalyst layer according to the method of claim 20 is nickel. 2 · The carbonaceous raw material described in item i6 of the patent application scope is acetylene. No. 3, as in the case of the acetylene and hydrogen described in Item 2 of the scope of the patent application, the ratio of the elongation is 0·01 5 To 15 rooms. ^ 4 (6) The method described in claim 23, the optimum reaction temperature for the money film step is shouting to 75 吖. The method of the whole genus 1: Sun 1 ° patent application range No. 24 to the substrate is stainless steel. 6. The material of the de-catalytic layer is nickel as described in claim 25 of the patent application. Among them, one of them is 23 of them.
TW095143215A 2006-11-22 2006-11-22 Method of coating carbon film on metal substrate surface at low temperature TW200823313A (en)

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TWI411786B (en) * 2009-09-30 2013-10-11 Kobe Steel Ltd Electric contact member
TWI584358B (en) * 2011-12-13 2017-05-21 蘭姆研究公司 Electroless copper deposition
US11590568B2 (en) 2019-12-19 2023-02-28 6K Inc. Process for producing spheroidized powder from feedstock materials
US11633785B2 (en) 2019-04-30 2023-04-25 6K Inc. Mechanically alloyed powder feedstock
US11717886B2 (en) 2019-11-18 2023-08-08 6K Inc. Unique feedstocks for spherical powders and methods of manufacturing
US11839919B2 (en) 2015-12-16 2023-12-12 6K Inc. Spheroidal dehydrogenated metals and metal alloy particles
US11855278B2 (en) 2020-06-25 2023-12-26 6K, Inc. Microcomposite alloy structure
US11919071B2 (en) 2020-10-30 2024-03-05 6K Inc. Systems and methods for synthesis of spheroidized metal powders
US11963287B2 (en) 2020-09-24 2024-04-16 6K Inc. Systems, devices, and methods for starting plasma

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI411786B (en) * 2009-09-30 2013-10-11 Kobe Steel Ltd Electric contact member
TWI584358B (en) * 2011-12-13 2017-05-21 蘭姆研究公司 Electroless copper deposition
US11839919B2 (en) 2015-12-16 2023-12-12 6K Inc. Spheroidal dehydrogenated metals and metal alloy particles
US11633785B2 (en) 2019-04-30 2023-04-25 6K Inc. Mechanically alloyed powder feedstock
US11717886B2 (en) 2019-11-18 2023-08-08 6K Inc. Unique feedstocks for spherical powders and methods of manufacturing
US11590568B2 (en) 2019-12-19 2023-02-28 6K Inc. Process for producing spheroidized powder from feedstock materials
US11855278B2 (en) 2020-06-25 2023-12-26 6K, Inc. Microcomposite alloy structure
US11963287B2 (en) 2020-09-24 2024-04-16 6K Inc. Systems, devices, and methods for starting plasma
US11919071B2 (en) 2020-10-30 2024-03-05 6K Inc. Systems and methods for synthesis of spheroidized metal powders

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