TW200822980A - Atmosphere plasma cleaning and treating device - Google Patents

Atmosphere plasma cleaning and treating device Download PDF

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Publication number
TW200822980A
TW200822980A TW95142460A TW95142460A TW200822980A TW 200822980 A TW200822980 A TW 200822980A TW 95142460 A TW95142460 A TW 95142460A TW 95142460 A TW95142460 A TW 95142460A TW 200822980 A TW200822980 A TW 200822980A
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Taiwan
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electrode
gas
plasma cleaning
cavity
cleaning device
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TW95142460A
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Chinese (zh)
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TWI317657B (en
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zhi-ming Yan
Shiaw-Huei Chen
Ming-Song Yang
Meng-Han Huang
yong-zhi Chen
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Atomic Energy Council
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Abstract

This invention relates to an atmosphere plasma cleaning and treating device, comprising a gas vortex chamber having two or more gas input ports, a first electrode disposed in the gas chamber, a second electrode disposed in the gas chamber and opposite to the first electrode, an insulation spacing layer disposed between the first electrode and the second electrode, a magnetic field generating device disposed outside of the first electrode, an import buffering chamber disposed outside the gas vortex chamber, and a high pressure power source device electrically connected with the first electrode and the second electrode. This invention utilizes gaseous discharge to generate non-thermal plasma in the gas vortex chamber, moving along with the gas flow to the outlet for cleaning a surface of an article. The plasma cleaning device of this invention is easy in operation and can continuously apply plasma to clean article, thereby effectively achieving the efficacy of saving power and reducing costs.

Description

200822980 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種大氣電漿清潔處理裝置,尤 指運用-腔體内之-特定氣體放電產生電榮做清潔物 件表面之用,其操作簡單且可連續以電漿清潔物件者。 【先前技術】 傳統物件之清潔方式須耗費大量化學清潔溶劑, 以及後續需使用大量清水沖洗及烘乾,此清潔程 僅會產生揮發性有機氣體造成空污問題,且浪費水次 源及耗時。以台灣而言,環保署最近擬修改法規,貝 徵VOC空污費,對此將在國内造成清潔製程更改^ 力。另國際趨勢亦朝綠色製程之綠色產品方向前進, 相關法規亦在擬定或實施中。 大氣電漿清潔處理技術乃是利用氣體高壓放電方 5產生具有高動能的自由電子,經由此類電子與其他 氣體分子、原子碰撞轉移能量而形成自由活化基與激 發態分子等,再與物件表面之有機污染物發生反應如 氧化作用’將這些有機污染物轉變成無害或低污染物 質,達到清潔物件表面之目的。因為在此放電過程中, 主要外界能量均施加在電子上,原氣體分子能量並無 大幅變動,即平均電子溫度遠大於氣體溫度,故稱為 非熱電漿。此技術具有省能與高效率之優點,且可大 幅減少化學品使用量。 200822980 一般高壓放電電漿反應器的結構設計與其應用之 標的物有密切關聯。目前應用於清潔物件表面上之電 漿反應器的主要有採RF放電及介電質屏壁放電二 種。採RF放電主要以一金屬振盪腔體放電為主,因 大氣中起始放電不易,常須以它法辅助,另須有調諧 裝置以負載匹配減少反射,其系統較複雜及成本較 高。介電質屏壁放電起源自1857年德國Siemens製造 臭氧’且延用至今並無巨大變化,此法之反應器則有 一或二個介電質絕緣材質於放電金屬電極間作隔離, 避免短路’另此法使用一般交流高壓電源即可,故可 降低電源設置成本,因而應用層面較廣且普及。 另按中華民國專利公報公告第541614號之「電漿 清潔裝置」’此專利内容係為一種電漿清潔裝置,係於 支撐架内配合溝槽供放置數條平板狀的待清潔物於腔 體内,配合電源供應器及電極外側之磁鐵所提供之磁 場可對待清潔物提供一種電漿之清潔;其特徵在於該 支撐架内橫設有-傳動桿可與腔體的動力源連接並受 其驅動’使之在支撐架内可以上下作動同時將至少二 條待清潔物一推出支擇架;#此成為—種不會受支 撐架影響且使清潔效果更為均勻的電漿清潔裝置者。 雖然上述習用之電聚清潔裝置可清潔基板 構,雜’-次需裝置數個基板,錢清潔時間亦較長, 母二人清潔之基板數量有限,更換基板亦耗時,而電聚 200822980 閉電源即造成耗電,若 。故一般習用者係無法 需。 … 清潔裝置於更換過程中若不關 關閉又要浪費再次開啟之時間 符合使用者於實際使用時之所 【發明内容】 本發明之主要目的係在於,提供一操作簡單之大 氣電漿清潔處理裝置,只須將欲清潔之物件放置於電 ,喷射處’即可達到清潔之功m連續清潔物件, 達到省電及降低成本之功效。 理㈣並t 一種大氣電漿清潔處 ☆裝置、、包3-具兩個或多個氣體輸入埠之氣體漩 =空腔、一設置於該氣體璇流空腔内之第一電極、一 設置於該氣體璇流空腔内並與該第一電極相對應之第 ,電極、—設於該第—電極與該第二電極間之絕緣間 隔層,ί於該氣體m腔外之氣體輸人緩衝空腔 及一設於該第一電極外側之磁場產生裝置,另有一與 «•亥第-電極及該第二電極電性麵接之高壓電源装置, 用以提供氣體放電產生非熱電漿所需之高壓電源,而 本發明所產生之非熱電漿係由該第二電極之中空圓柱 通道喷射而出,且所欲清潔之物件只須放置於電衆喷 射出口處,即可以用電漿清潔。 、 【實施方式】 明參閱『第1及第2圖』所示,係分別為本發明 使用狀態之侧視剖面示意圖及本發明使用狀態之側視 200822980 剖面示意圖。如圖所示:本發明之大氣電漿清潔處理 裝置1係包含一氣艟漩流空腔11、一第一電極1 2、一第二電極1 3、一絕緣間隔層1 4、一磁場產 生裝置1 5及一氣體輸入緩衝空腔1 6,另有一高壓 電源裝置1 2 2與該第一電極1 2及該第二電極1 3 電性耦接,用以提供氣體放電產生非熱電漿所需之高 壓電源。 該第一電極1 2係設於該氣體漩流空腔丄i内之 一端’該第二電極1 3係與該第一電極! 2相對應設 置於該氣體璇流空腔i!内之另一端,而該第一電極 W之-側係覆蓋有一第一絕緣層121,其另一側 係設有一磁場產线置1 5與該第-絕緣層i 2工相 對應’且該第一電極1 2係連接該高壓電源装置1 2 ό亥第^一電極1 3 3 1,該第二電極工 覆蓋有一第二絕緣層 地電極。 之中心係設有一中空圓柱通道1 3靠近該第一電極12之一側係 1 3 2,且該第二電極1 3係接 間隔層1 4。該第—與第二電極1 3間係設有該絕 金屬導電材質所製成電極12與第二電極13係由 金,且該電極之該金屬材質可為不導磁之鋼 3〜5麵。該第—絕 里之厚度可. i J 1與該第二絕緣層1 3 200822980 ^材質可為鐵弗龍(PTFE)、聚芳趟酮(PEEK)、 聚乙稀_、陶究、玻璃、石英等,厚度可為〇5〜3·。 l ikHz)父流電源裝置。 ☆當使用本發明時,-工作氣體係先進人該氣體輸 入:衝空腔16後,經由該兩個或多個細小之氣體輸 广二1 1 1 ’加快流速進入該氣體漩流空腔工i中。 體旋流空腔i U設有兩個或多個氣體輸入淳1 11,該氣體輸入埠1 η係採圓對稱設置,以近切 線角度鑽孔穿透該絕緣間隔層14,其口徑極細,約 在1 mm左右,當该工作氣體從該氣體輸入淳1 1 1通 入寺係於該絕緣間隔層工4、該第—絕緣層1 ^ 1 ’、該第一絕緣層1 3 2所構成之氣體旋流空腔1 1内 之放電工間形成向速旋流,以加長該工作氣體在該放 電工間内的流動路控,增加碰撞次數產生更多活性自 纟$。f中’該工作氣體係可為氧氣、氮氣、空氣、 氛氣、、一氬氣、四氟化碳等乾燥氣體,亦可視欲清潔物 件之污染性質而添加水氣調整混合之。該絕緣間隔層 1 4之材質可為鐵弗龍(pTFE)、聚乙烯(pE)等, 且該絕緣間隔層1 4之厚度可視實際高壓運作及放電 間隙距離考量之,該絕緣間隔層1 4之厚度可為 0·5〜3mm’而在該第_電極1 2側邊之該第—絕緣層 1 2 1與該第二電極1 3側邊之第二絕緣層1 3 2間 9 200822980 所形成之實際放電間隙距離係可為0.3〜lcm。 …當工作氣體在進入該氣體輸入緩衝空腔1 6後, 係藉由該氣體輸入埠1 1 1加速進入該氣體璇流空腔 1 1内形成高速旋流,此時該高壓電源裝置1 2 2係 輸出高壓電源至該第一電極12,因而使在該氣體璇 流空腔1 1内之氣體因高壓放電游離而產生電漿,且 該磁場產生裝置1 5係因位在該氣體旋流空腔1 1之 中央而產生一對稱軸向磁力線,可協助導引控制游離 氣體喷射之方向且增加喷射速度,故該電漿係由該第 二電極1 3間之該中空圓柱通道χ 3丄噴射而出。該 中空圓柱通道1 3 1之管壁係為電絕緣材質,可為鐵 弗龍(PTFE)、聚芳醚酮(PEEK)、聚乙烯(pE)等 絕緣材質,其通道内之直徑可為〇 5〜15cm,而該中空 圓柱通道1 3 1之出口亦可逐漸縮小成一噴嘴狀,以 提昇氣體於出口端之流速,其喷嘴口之直徑可為 〇·3〜0.8cm。本發明之欲清潔物件2只須放置於該中空 圓柱通道1 3 1下方,即可以電漿達到清潔之功/效了 該磁場產生裝置1 5可為一永久磁鐵,或一可由電流 控制磁場大小之通電線圈磁鐵。該氣體輸人緩衝空腔匕 1 6之作用除提供一氣體輸入緩衝空間外,更作為聯 結該第-電極1 2、該第二電極工3及該磁場產生裝 置15之絕緣固絲置’其材質可為鐵弗龍(P丁㈤ 或聚芳醚酮(PEEK)等可機械加工製作之絕緣材料。 200822980 故本發明可在大氣壓下工作,且極易配合輸送平 台的程序㈣,對欲清潔之物件進行清潔。又因採先 進電漿清潔方式’大幅減少傳統化學清潔溶劑之使 用,為一綠色技術。 ▲综上所述,本發明之大氣電漿清潔處理裝置可有 效改善客用之種種缺點,操作簡單,並只須將欲清潔 之物件放置於電漿喷射處,即可達到清潔之功效,且 可連續清潔物件,達到省電及降低成本之功效,進而 使本發明之產生能更進步、更實用、更符合使用者之 所須’確已符合發明專利申請之要件,練法提出專 利申請。 冬惟以上所述者,僅為本發明之較佳實施例而已, S =能以此限定本發明實施之範圍;故,凡依本發明 申請專利範圍及發明說明書内容所作之簡單的等效變 化與修飾’皆應仍屬本發明專利涵蓋之範圍内。 200822980 f圖式簡單說明】 第1圖,係本發明使用狀態之側視剖面示意圖 第2圖,係本發明使用狀態之俯視剖面示意圖 【主要元件符號說明】 電漿清潔裝置1 氣體旋流空腔1 1 氣體輸入璋111 "第一電極12 第一絕緣層1 2 1 高壓電源裝置1 2 2 第二電極1 3 中空圓柱通道131 第二絕緣層1 3 2 絕緣間隔層1 4 磁場產生裝置1 5 氣體輸入緩衝空腔16 欲清潔之物件2 12200822980 IX. Description of the Invention: [Technical Field] The present invention relates to an atmospheric plasma cleaning treatment device, and more particularly to the use of a specific gas discharge in a cavity to generate a surface for cleaning an object, the operation thereof Simple and continuous cleaning of objects with plasma. [Prior Art] The cleaning method of traditional objects requires a large amount of chemical cleaning solvent, and the subsequent use of a large amount of water to rinse and dry. This cleaning process only generates air pollution caused by volatile organic gases, and wastes water source and time. . In the case of Taiwan, the EPA recently proposed to amend the regulations and levy VOC air pollution fees, which will cause cleaning process changes in the country. In addition, international trends are also moving towards the green products of green processes, and relevant regulations are being drafted or implemented. Atmospheric plasma cleaning treatment technology is to use the high-pressure discharge side of the gas to generate free electrons with high kinetic energy. The electrons collide with other gas molecules and atoms to transfer energy to form free activating groups and excited state molecules, and then with the surface of the object. Organic pollutants react, such as oxidation, to convert these organic pollutants into harmless or low-pollution substances for the purpose of cleaning the surface of objects. Because the main external energy is applied to the electrons during the discharge process, the energy of the original gas molecules does not change greatly, that is, the average electron temperature is much larger than the gas temperature, so it is called non-thermal plasma. This technology has the advantages of energy saving and high efficiency, and can greatly reduce the amount of chemicals used. 200822980 The structural design of a general high-pressure discharge plasma reactor is closely related to its application. At present, there are two types of plasma reactors used for cleaning the surface of cleaning objects: RF discharge and dielectric screen discharge. The discharge of RF is mainly based on the discharge of a metal oscillating cavity. Because the initial discharge in the atmosphere is not easy, it is often necessary to assist it by the method. The tuning device is required to load-match and reduce the reflection. The system is complicated and costly. The dielectric screen wall discharge originated from the ozone produced by Siemens in Germany in 1857 and has not changed greatly since its use. The reactor of this method has one or two dielectric insulating materials to isolate between the discharge metal electrodes to avoid short circuit. In addition, the general AC high-voltage power supply can be used in this method, so that the power supply setting cost can be reduced, and the application level is wider and more popular. According to the "Pure Cleaning Device" of the Republic of China Patent Gazette No. 541614, this patent is a plasma cleaning device, which is equipped with a groove in the support frame for placing a plurality of flat objects to be cleaned in the cavity. The magnetic field provided by the power supply and the magnet outside the electrode can provide a plasma cleaning for the cleaning object; the utility model is characterized in that the supporting rod is horizontally connected with the transmission rod to be connected with the power source of the cavity and subjected to the same The drive 'move it up and down in the support frame while pushing at least two items to be cleaned out of the support frame; # this becomes a kind of plasma cleaning device that is not affected by the support frame and makes the cleaning effect more uniform. Although the above-mentioned electro-convergence cleaning device can clean the substrate structure, the number of substrates required for the miscellaneous '-times is small, the cleaning time is long, the number of substrates cleaned by the mother is limited, and the replacement of the substrate is also time consuming, and the electro-polymerization 200822980 is closed. The power supply causes power consumption, if. Therefore, the general practitioners are not required. ... The cleaning device is not turned off during the replacement process and wastes the time of re-opening in accordance with the user's actual use. [The present invention] The main object of the present invention is to provide a simple operation of the atmospheric plasma cleaning treatment device. It is only necessary to place the object to be cleaned in electricity, and the spray point can achieve the cleaning work m to continuously clean the object, thereby achieving the effect of saving electricity and reducing cost. (4) and t an atmospheric plasma cleaning station ☆ device, package 3 with two or more gas input 埠 gas swirl = cavity, a first electrode disposed in the gas turbulent cavity, a setting a first electrode corresponding to the first electrode in the gas turbulent cavity, an insulating spacer disposed between the first electrode and the second electrode, and a gas input outside the gas cavity a buffer cavity and a magnetic field generating device disposed outside the first electrode, and a high voltage power supply device electrically connected to the electrode and the second electrode for providing a gas discharge to generate a non-thermal plasma A high-voltage power source is required, and the non-thermal plasma generated by the present invention is ejected from the hollow cylindrical passage of the second electrode, and the object to be cleaned only needs to be placed at the outlet of the electric person, that is, it can be cleaned by plasma . [Embodiment] Referring to the "1st and 2nd drawings", it is a side cross-sectional view showing the state of use of the present invention and a side view of the side view of the present invention in 200822980. As shown in the figure, the atmospheric plasma cleaning treatment device 1 of the present invention comprises a gas swirling cavity 11, a first electrode 1, a second electrode 13, an insulating spacer 14, and a magnetic field generating device. 1 5 and a gas input buffer cavity 166, and a high voltage power supply device 1 2 2 is electrically coupled to the first electrode 12 and the second electrode 13 for providing a gas discharge to generate non-thermal plasma High voltage power supply. The first electrode 12 is disposed at one end of the gas swirling cavity 丄i. The second electrode 13 is coupled to the first electrode! 2 correspondingly disposed at the other end of the gas turbulent cavity i!, the first side of the first electrode W is covered with a first insulating layer 121, and the other side of the first electrode is provided with a magnetic field line set 15 and The first insulating layer is connected to the high voltage power supply device 1 2 , and the second electrode is covered with a second insulating layer. . The center of the system is provided with a hollow cylindrical passage 13 adjacent to one side of the first electrode 12, and the second electrode 13 is connected to the spacer layer 14. The electrode 12 and the second electrode 13 made of the metal-plated conductive material between the first electrode and the second electrode 13 are made of gold, and the metal material of the electrode may be a non-magnetic steel 3~5 surface. . The thickness of the first - the outer layer can be. i J 1 and the second insulating layer 1 3 200822980 ^ material can be Teflon (PTFE), polyaryl fluorenone (PEEK), polyethylene _, ceramics, glass, Quartz, etc., the thickness can be 〇5~3·. l ikHz) parent flow power unit. ☆When using the present invention, the working gas system advanced person enters the gas: after flushing the cavity 16, the two or more small gas is transported through the wide 21 1 ' to accelerate the flow rate into the gas swirling cavity i. The body swirling cavity i U is provided with two or more gas inlets 淳1, 11. The gas input 埠1 η is circularly symmetrically disposed, and the hole is drilled through the insulating spacer layer 14 at a near tangential angle, and the diameter thereof is extremely thin. At about 1 mm, when the working gas is passed from the gas input port 11 1 to the insulating spacer layer 4, the first insulating layer 1 ^ 1 ', and the first insulating layer 13 2 The discharge chamber in the gas swirling cavity 1 1 forms a velocity swirling flow to lengthen the flow path of the working gas in the discharge chamber, increasing the number of collisions to generate more activity. The working gas system in f can be a dry gas such as oxygen, nitrogen, air, atmosphere, argon gas, carbon tetrafluoride or the like, and can also be added and adjusted according to the pollution property of the object to be cleaned. The material of the insulating spacer layer 14 may be Teflon (pTFE), polyethylene (pE), etc., and the thickness of the insulating spacer layer 14 can be considered according to actual high voltage operation and discharge gap distance, and the insulating spacer layer 14 The thickness of the first insulating layer 1 2 1 on the side of the first electrode 1 2 and the second insulating layer 1 3 2 on the side of the second electrode 13 are 9 200822980 The actual discharge gap distance formed may be 0.3 to 1 cm. When the working gas enters the gas input buffer cavity 16 , the gas input 埠 11 1 is accelerated into the gas turbulent cavity 1 1 to form a high-speed swirling flow. At this time, the high-voltage power supply device 1 2 The 2 series outputs a high voltage power supply to the first electrode 12, thereby causing the gas in the gas turbulent cavity 1 1 to be free due to high voltage discharge, and the magnetic field generating device 15 is in the gas swirling flow. A symmetric axial magnetic field line is generated at the center of the cavity 1 1 to assist in guiding and controlling the direction of the free gas injection and increasing the ejection speed. Therefore, the plasma is formed by the hollow cylindrical channel between the second electrodes 13 Spray out. The wall of the hollow cylindrical channel 133 is electrically insulated and can be insulated materials such as Teflon (PTFE), polyaryletherketone (PEEK), polyethylene (pE), etc., and the diameter in the channel can be 〇 5~15cm, and the outlet of the hollow cylindrical passage 133 can be gradually reduced into a nozzle shape to increase the flow rate of the gas at the outlet end, and the diameter of the nozzle opening can be 〇3~0.8cm. The object to be cleaned 2 of the present invention only needs to be placed under the hollow cylindrical passage 133, that is, the plasma can be cleaned/effective. The magnetic field generating device 15 can be a permanent magnet, or a current can control the magnitude of the magnetic field. The energized coil magnet. The gas input buffer cavity 匕16 functions to provide a gas input buffer space, and is also used as an insulating wire for connecting the first electrode 1, the second electrode 3 and the magnetic field generating device 15 The material can be a mechanically processed insulating material such as Teflon (P-(5) or polyaryletherketone (PEEK). 200822980 Therefore, the invention can work under atmospheric pressure, and is easy to cooperate with the conveying platform program (4), for cleaning The object is cleaned, and the use of advanced plasma cleaning method to greatly reduce the use of traditional chemical cleaning solvents is a green technology. ▲ In summary, the atmospheric plasma cleaning treatment device of the present invention can effectively improve various types of customers. Disadvantages, simple operation, and only need to place the object to be cleaned at the plasma spray point, the cleaning effect can be achieved, and the object can be continuously cleaned, thereby achieving the functions of power saving and cost reduction, thereby making the invention more capable. Progress, more practical, and more in line with the user's requirements must have met the requirements of the invention patent application, and the patent application is made by the practice method. For example, S = can limit the scope of implementation of the present invention; therefore, all equivalent changes and modifications made in accordance with the scope of the invention and the description of the invention should remain within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing the state of use of the present invention. Fig. 2 is a schematic plan view showing the state of use of the present invention. [Main component symbol description] Plasma cleaning device 1 Gas swirling Cavity 1 1 gas input 璋 111 " first electrode 12 first insulating layer 1 2 1 high voltage power supply device 1 2 2 second electrode 1 3 hollow cylindrical channel 131 second insulating layer 1 3 2 insulating spacer layer 1 4 magnetic field generating device 1 5 Gas input buffer cavity 16 Object to be cleaned 2 12

Claims (1)

200822980 十、申請專利範圍: 1 . 一—種大氣電漿清潔處理裝置,其至少包括有: 一高壓電源裝置; 一氣體輸入緩衝空腔; -氣體旋流空腔,該氣體璇流空腔係設置於該 氣體輸入緩衝空腔内,該氣體璇流空腔係包含兩個 或多個氣體輸入埠; 一第一電極,該第一電極係設置於該氣體璇流 空腔内,並與該高壓電源裝置電性耦接,且於其表 面覆蓋一第一絕緣層; 一第二電極,該第二電極係設置於該氣體漩流 空腔内,並與該第一電極相對應,且係接地電極, 而6亥第一電極之中心係設置有一中空圓柱通道,又 於第二電極表面覆蓋一第二絕緣層; 一絕緣間隔層,該絕緣間隔層係設置於該第一 電極與該第二電極之間;以及 磁琢產生裝置’该磁場產生裝置係設置於該 第一電極之一側,並與覆蓋於該第一電極之第一絕 緣層相對。 2 ·依申請專利範圍第1項所述之電漿清潔裝置,其 中’該兩個或多個氣體輸入埠係採圓對稱設置,以 13 200822980 近切線角度鑽孔穿透該絕緣間隔層,其口徑約在 1mm左右;而一工作氣體係從該兩個或多個氣體輸 入埠通入,於該絕緣間隔層與該第一、二電極所構 成之一放電空間内形成高速旋流,以加長該工作氣 體在該放電空間内的放電路徑,增加碰撞次數產生 更多活性自由基。 3 ·依申請專利範圍第2項所述之電漿清潔裝置,其 中,忒工作氣體係可為氧氣、氮氣、空氣 '氦氣、 氬氣或四氟化碳等乾燥氣體,也可視欲清潔物件之 污染性質而添加水氣調整混合之。 4 ·依申請專利範圍第1項所述之電漿清潔裝置,其 中,該第一電極與該第二電極係由一金屬導電材質 所製成,而該金屬材質可為不導磁之銅合金,且該 電極之厚度可視實際運作考量之,厚度可為 3〜5mm 〇 5·依申請專利範圍第1項所述之電漿清潔裝置,其 中,該絕緣間隔層之材質係可為鐵弗龍(PTFE)、 聚芳醚鲖(PEEK)或聚乙烯(PE)等,且該絕緣 間隔層之厚度可視實際高壓運作及放電間隙距離 考量之,而該絕緣間隔層之厚度可為〇 5〜3mm 3依申吻專利範圍第1項所述之電漿清潔裝置,其 中,該高壓電源裝置所產生之放電間隙距離可為 〇·3〜1 cm 〇 200822980 7 ·依申請專利範圍第1項所述之電漿清潔裝置,其 中,該中空圓柱通道係由電絕緣材質所組成,該電 絕緣材質可為鐵弗龍(PTFE )、聚芳醚酮 (PEEK)、聚乙烯(PE)或同類型絕緣材質,其通 道内直徑可為〇·5〜1.5cm,且該中空圓柱通道之出 口亦可逐漸縮小成一喷嘴狀,提昇氣體於出口端之 流速,其喷嘴口直徑可為〇.3〜〇 8cm。 8 ·依申請專利範圍第1項所述之電漿清潔裴置,其 中,該磁場產生裝置可為一永久磁鐵,或一可由電 流控制磁場大小之通電線圈磁鐵。 9 依申請專利範圍第i項所述之電漿清潔裝置,其 中,該氣體輸入緩衝空腔除提供一氣體輸入緩衝* 間外,更係為一聯結該第一電極、該第二電極蛊: 磁場產生緣固定裝置,其材f 弗= 作之絕緣㈣。 機械加工製 10·依申請專利範圍*1項所述之電漿清潔裝 中,該高壓電源裝置係為一高壓高頻(>1, ’其 流電源裝置。 z )交 15200822980 X. Patent application scope: 1. An atmospheric plasma cleaning treatment device, which comprises at least: a high voltage power supply device; a gas input buffer cavity; a gas swirl cavity, the gas turbulent cavity system Provided in the gas input buffer cavity, the gas turbulent cavity comprises two or more gas input ports; a first electrode, the first electrode is disposed in the gas turbulent cavity, and The high voltage power supply device is electrically coupled and covered with a first insulating layer on the surface thereof; a second electrode disposed in the gas swirling cavity and corresponding to the first electrode, and a grounding electrode, wherein a center of the first electrode of the 6H is provided with a hollow cylindrical channel, and a surface of the second electrode is covered with a second insulating layer; an insulating spacer layer is disposed on the first electrode and the first electrode The magnetic field generating device is disposed on one side of the first electrode and opposite to the first insulating layer covering the first electrode. 2. The plasma cleaning device according to claim 1, wherein the two or more gas input ports are circularly symmetrically disposed, and the insulating spacer layer is drilled through the near-tangential angle of 13 200822980. The caliber is about 1 mm; and a working gas system is introduced from the two or more gas inlets, forming a high-speed swirling flow in the insulating space formed by the insulating spacer and the first and second electrodes to lengthen The discharge path of the working gas in the discharge space increases the number of collisions to generate more active radicals. 3. The plasma cleaning device according to item 2 of the patent application scope, wherein the 忒 working gas system may be a dry gas such as oxygen, nitrogen, air, helium, argon or carbon tetrafluoride, and may also be used to clean the object. The nature of the pollution is added with water and gas to adjust the mixing. The plasma cleaning device of claim 1, wherein the first electrode and the second electrode are made of a metal conductive material, and the metal material is a non-magnetic copper alloy. And the thickness of the electrode can be regarded as the actual operation consideration, the thickness can be 3~5mm 〇5. The plasma cleaning device according to the first aspect of the patent application, wherein the material of the insulating spacer layer can be Teflon (PTFE), polyarylene ether (PEEK) or polyethylene (PE), etc., and the thickness of the insulating spacer layer can be considered according to the actual high voltage operation and the discharge gap distance, and the thickness of the insulating spacer layer can be 〇5~3mm The plasma cleaning device according to the first aspect of the invention, wherein the high-voltage power supply device generates a discharge gap distance of 〇·3~1 cm 〇 200822980 7 · according to the first item of the patent application scope The plasma cleaning device, wherein the hollow cylindrical channel is composed of an electrically insulating material, which may be Teflon (PTFE), polyaryletherketone (PEEK), polyethylene (PE) or the same type of insulation. Material, the inner diameter of the channel can be It is 5·5~1.5cm, and the outlet of the hollow cylindrical passage can be gradually reduced into a nozzle shape, and the flow velocity of the gas at the outlet end can be increased, and the diameter of the nozzle opening can be 〇.3~〇 8cm. 8. The plasma cleaning device of claim 1, wherein the magnetic field generating device can be a permanent magnet or an energized coil magnet that can be controlled by current to a magnetic field. The plasma cleaning device of claim i, wherein the gas input buffer cavity is connected to the first electrode and the second electrode, in addition to providing a gas input buffer*. The magnetic field produces a rim fixture that is made of insulation (4). Machining system 10. According to the plasma cleaning device described in the scope of application patent *1, the high-voltage power supply device is a high-voltage high-frequency (>1, 'the power supply device. z)
TW95142460A 2006-11-16 2006-11-16 Atmosphere plasma cleaning and treating device TW200822980A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397124B (en) * 2008-09-22 2013-05-21 Taiwan Semiconductor Mfg Method of fabricating semiconductor device
TWI472393B (en) * 2011-12-20 2015-02-11 Metal Ind Res & Dev Ct Method for surface cleaning of electrical discharge machining mold

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397124B (en) * 2008-09-22 2013-05-21 Taiwan Semiconductor Mfg Method of fabricating semiconductor device
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
TWI472393B (en) * 2011-12-20 2015-02-11 Metal Ind Res & Dev Ct Method for surface cleaning of electrical discharge machining mold

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