TW200822190A - Method of manufacturing semiconductor device - Google Patents

Abstract

The present invention provides a method of manufacturing a semiconductor device constituted with an epitaxial crystal containing group III-V nitrides by using a substrate for growing the epitaxial crystal, the method comprises a step of forming a separation groove for dividing the epitaxial crystal into plural regions and removing the epitaxial crystal from the substrate.

Description

200822190 IX. Description of the Invention: TECHNICAL FIELD The present invention relates to a method of manufacturing a semiconductor device. More specifically, the present invention relates to a simple manufacturing method of a semiconductor element having an improved light output. [Prior Art] A Group 3-5 nitride semiconductor represented by the formula InxGayAlzN (i.e., Bu 1,) has been widely used for blue LEDs and the like. When a semiconductor element such as a blue LED containing an epitaxial crystal of a bismuth nitride semiconductor is produced, the base (4) sapphire for the growth of a Group 3-5 nitride semiconductor, which has been widely used, is an organometallic vapor phase growth method (MOVPE method). A method of growing 3_5$ nitride semiconductor crystallites on a sapphire substrate has generally been used. Nongjin, Ik has used semiconductor light-emitting elements using Group 3-5 nitride semiconductors to be widely used. For this reason, a Group 3-5 nitride semiconductor light-emitting device having a high light-emitting output has been proposed as a Group 3-5 nitride semiconductor light-emitting device in which a substrate for growth is peeled off. And a sapphire semiconductor light-emitting device using a low-thermal conductivity and electrical insulating sapphire substrate as a substrate for growth, and a 3-5-nitride semiconductor-containing smear having a light-emitting layer is formed on the sapphire 2 Crystal crystallization. However, by removing the crystallite crystal containing the group 3-5 nitride semiconductor having the light-emitting layer from the growth sapphire substrate, in addition to the heat dissipation hindrance caused by the f-stone, the high-luminance output can be displayed. Outside the drive, the component damage associated with heat generation is reduced, and the reliability of the component is improved. The Group 3-5 nitride semiconductors which can be used for various semiconductor elements are reported to be difficult to grow by themselves, and the (IV) bulk crystal wires can be used as a practical self-supporting substrate. Therefore, conventionally, a nitride-containing nitride is formed on a substrate for growth. Various methods have been proposed for the method of producing a semiconductor device in which the crystal of the V body is crystallized and then peeled off the substrate for growth. In the method of producing a crystallization semiconductor crystal, a method of growing a group III nitride semiconductor crystal on a base substrate, and a step of growing the group III nitride semiconductor crystal, and The step of separating the group III nitride semiconductor crystal from the base substrate is such that the thickness of the group III nitride semiconductor crystal is 1 GG or more and 6 GGpm or less, and the width is 2 mm or more and 5 〇 mm or less. This method is to form a mask layer having one or more openings on the base substrate before growth, and the crystal of the group III nitride semiconductor is preferably selected on the opening surface of the base substrate located below the opening of the mask layer. The method of growing a 'group 3 nitride semiconductor crystal which is grown from the base substrate, and obtaining a group III nitride semiconductor crystal having a large half (four) element. ^ However, in order to form a mask layer on a base substrate in accordance with the method proposed by this method, it is necessary to use a lithography (four) technique, which requires a photoresist exposure step, etc., so that there is a problem of cost and processing time. Further, in the relatively thin Group 3 vaporized semiconductor crystals, it is known that in the process of forming each of the LEDs, there are problems such as occurrence of cracks such as cracks, deterioration in characteristics, or destruction of components, and it is necessary to improve such problems. . SUMMARY OF THE INVENTION 319508 6 200822190 (Problems to be Solved by the Invention) • The purpose of the description is to provide a simple manufacturing method for a light-emitting output of a semi-conductive body element. Another object of the present invention is to provide a method for producing a semiconductor device in which a semiconductor element composed of a crystal of a crystal of a group 3-5 nitride semiconductor is grown by peeling off the substrate. (Technical means for solving the problem) - In order to solve the above problems, the present inventors have completed the present invention by focusing on the results of the manufacturing method of the semiconductor element. That is, f is provided by the technician. A method for producing a semiconductor element of a month is a method of producing a semiconductor element composed of a crystal of a crystal of a group III nitride semiconductor using a growth substrate, and includes a step of forming a separation trench The method is to separate the crystals of the crystals into a plurality of regions and to peel off the growth plate. (2) The method for producing a ruthenium crystal according to the method of producing a semiconductor containing a Group 3-5 nitrogen-containing C=substance, and dividing the epitaxial crystal into a step of separating the grooves in the plurality of regions; and a step of obtaining a semiconductor element by peeling the growth substrate as described above from the stray crystal. (3) The method of manufacturing the epitaxial crystal containing the 3 5 /saride semiconductor on the growth substrate to form a buffer layer. a step of forming a knife-by-groove separating the buffer layer into a plurality of regions; a step of crystallizing the epitaxial crystal containing the group 3-5 nitride semiconductor; forming a functional layer on the buffer layer of the scalpel; and borrowing It is a step of obtaining a semiconductor element by peeling off the substrate for growth of 7 319508 200822190 uranium. In the above, the method of producing the above-mentioned &lt;4&gt;, and the method of the invention, wherein the thickness of the crystallite crystal is 1 〇 μ; &lt;5&gt; The method for producing any one of &lt;1&gt; to &lt;4&gt; is formed by growing MOVPE. The method of producing the above-mentioned epitaxial crystals in the order of HVPE/MOPVE, wherein the epitaxial crystals are grown in the order of HVPE/MOPVE. &lt;7&gt; The manufacturing method according to any one of <1> to <6>, wherein the separation groove is produced. And the manufacturing method of any one of <1> to <7>, wherein the epitaxial crystal is attached to the resin tape and the substrate for growth substrate. The manufacturing method of any one of the above-mentioned epitaxial crystals is carried out on a resin tape, as described in any one of the above-mentioned. The manufacturing method according to any one of <1> to <9>, wherein the processing of the epitaxial crystal of the I is carried out on a resin tape. The production method according to any one of the above-mentioned <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; &lt;12&gt; The method of producing &lt;1&gt;, wherein the inorganic particles are oxidized s. The production method according to any one of <1>, wherein the peeling surface of the epitaxial crystal is chemically and/or mechanically processed. The manufacturing method according to any one of <1>, wherein the semiconductor element is a light-emitting element. The manufacturing method according to any one of <1> to <14>, wherein the epitaxial crystal system comprises an n-type 3-5 group nitride semiconductor layer, _ As a 3-5 group nitride semiconductor layer of the light-emitting layer, ? A Group 3_5 nitride semiconductor having a double heterostructure of a Group 3_5 nitrided semi-conductor layer and an n+-type Group 3-5 nitride semiconductor layer. And &lt;16&gt;, a semiconductor element produced by the method of any one of the above-mentioned items. [Embodiment] f (Best Embodiment of the Invention) An embodiment of the present invention will be described with reference to the drawings. In the production method of the present invention, when a semiconductor constituting the epitaxial crystal containing a group 3-5 nitride semiconductor, which is formed by the substrate for delamination growth, is produced, the substrate for growth is separated from the epitaxial crystal. A step of making a separation trench for separating the crystallites of the crystal into a plurality of regions in advance. The area of the plurality of regions separated by the separation grooves can be formed, for example, by an area equal to or larger than the area of the target element wafer, but is not limited thereto. ^ The step of producing the separation groove is not particularly limited as long as the substrate for growth is peeled off from the crystal of the crystal, but includes: A1) growing the crystal of the crystal containing the 3 = family of the semiconductor semiconductor on the growth substrate. And separating the crystals of the crystals into a plurality of regions by the separation groove, and A3) forming a semiconductor element or the like by the steps of A1) to A3) by stripping the growth substrate; or including: including: 3. 5 The doped crystal of the group nitride semiconductor grows on the growth substrate to form a buffer layer, and the buffer layer 319508 9 200822190 is separated into a plurality of regions by the separation trench, B3) and then the vaporized semiconductor including the component operating portion is formed. It is preferable that the stupid crystal grows on the separated crystallized crystals to form the layer, and B4) the substrate for growth is peeled off to obtain the steps b1) to B4) of the semiconductor element or the like. Fig. 1 to Fig. 4 are diagrams for explaining the steps of an embodiment of the present invention including the above steps A1. Fig. 1(a) is a cross-sectional view schematically showing a layer structure of an epitaxial substrate for producing a light-emitting diode comprising an epitaxial crystal of a 3/5-nitride half-body. The epitaxial substrate 1 shown in Fig. 1(0) shows a state in which the step of laminating the desired epitaxial crystal of the group 3-5 nitride semiconductor on the growth substrate 101 is completed. Here, the substrate for growth 1〇1 is used as a window substrate. In the growth substrate used in the production method of the present invention, a substrate composed of Sic, Si, MgA1204, LiTa03, zrB, c2, GaN, A1N or the like can be used. When the growth substrate is peeled off by the light irradiation described later, the growth substrate can efficiently transmit energy to the vicinity of the interface between the growth substrate and the Group 3-5 nitride semiconductor. From this point of view, the preferred ones are sapphire, MgAl2〇4, LiTa〇3, and GaN A1N' are more preferably sapphire. From the viewpoints of the difference in the coefficient of thermal thermal expansion of the Group 3-5 nitride semiconductor, the stability at high temperature, and the ease of wafer acquisition, it is more preferable to be sapphire or Sic, and it is preferably sapphire. Considering the above two points, it is more suitable for sapphire. In the cat crystal substrate 100, the day-to-day crystal of the jade &quot; which is laminated on the growth substrate 1〇1 is necessary for constituting the semiconductor element, and has a buffer layer and a functional layer of 319508 10 200822190. The epitaxial substrate 1 (8) shown in Fig. 1(a) is intended to be used. The manufacturer of the light-emitting diode has a light-emitting layer as a functional layer. The growth method of the epitaxial crystal containing a Group 3-5 nitride semiconductor on the growth substrate may be, for example, an organometallic thermal decomposition method (MOVPE method), a hydrogenated vapor phase growth method (HVPE method), or an MBE method. Wait. When the 3-5-nitride semiconductor crystal is grown by the MOVPE method, the following compounds can be used as a starting material. Examples of the Group 3 material include trimethylgallium [(CH3)3Ga, and the following formula R]R2R3Ga (hereinafter, written as (TMG) triethylgallium [(C2H5)3Ga, hereinafter sometimes written as TEG] (here, , ruler 2, Rs represents a lower alkyl group, a trialkylgallium, dimethylaluminum [(CHsLAl, sometimes written as TMA], triethylaluminum [(Qhaai, sometimes written as TEA), three different Butyl aluminum...-C4H9)3A1] and the like RiR2R3A1 (here, &, &, & represents lower alkyl) is not a trialkylaluminum; trimethylamine aluminoxane [(CH3hN: A1Hd) , tridecyl indium [(CH3)3In, sometimes written as TMI], triethylindium [(c2H5)3In] (: isoform HHn (here, Ri, I, & represents lower alkyl) The trialkyl indium such as trialkyl indium or diethyl indium chloride is used to convert two alkyl groups into a halogen atom, and indium chloride [111 (^) and the like is a halogen atom) The indium ingots, etc. are shown. These may be used alone or in combination. Among the three types of raw materials, the source of gallium should be TMG, the source of aluminum should be τΜΑ, and the source of indium should be ΤΜΙ. Listed as, for example, ammonia, hydrazine, methyl hydrazine, hydrazine, hydrazine hydrazinylamine, 1 2-dimethyl cateamine, tert-butylamine, ethylenediamine, etc. This 11 319508 200822190, etc. can be used singly or in any combination. Among these raw materials, ammonia and hydrazine have no carbon in the molecule. Atoms, which are less suitable for carbon contamination in semiconductors, are more suitable from the point of view of high-purity products, and ammonia is more suitable. In MOVPE; in the middle, the carrier gases of environmental gases and organometallic materials can be separated. Alternatively, a gas such as nitrogen, hydrogen, argon or helium may be used in combination, and hydrogen or helium is preferably used. The above raw material gas is introduced into the reaction furnace to grow the nitride semiconductor layer. The reaction furnace is provided with a raw material gas supplied from the raw material supply device to the reaction furnace. The raw material supply line is provided with a support for heating the substrate in the reaction furnace. The support body is formed by uniformly growing the nitride semiconductor layer, and generally forms a structure that can be rotated by a rotating device. A heating device such as a body-infrared lamp, by which heating, the raw material gas supplied to the reaction furnace through the raw material "maintenance" is decomposed on the growth substrate, and the desired Compound vapor-grown on the substrate. Bu == feed raw material gas to the reaction unreacted (iv), the system is discharged from the exhaust line to the outside of the reaction furnace, it is supplied to the exhaust gas treatment device.

^Please make E-methods semi-conductive (four) junctions using the following compounds as starting materials. Examples of the T-based raw material include a gallium gas in which a gallium metal and a hydrogen chloride gas are reversed at a high temperature, or an indium chloride gas obtained by causing a steel metal and a hydrogen chloride gas to be formed. Group 5 original: The system can be used alone or in combination with nitrogen, hydrogen, and 'carrier chyle. The raw material gas is introduced into the anti-cavity and rolling_, and is grown and grown. In the reactor, a Group 3-5 nitride semiconductor 319508 12 200822190 can be used as a raw material such as gallium, indium or indium. The $ family of raw materials can be listed as cattle or (iv) gas. The above raw material gas is introduced into the reactor to grow the nitride semiconductor. The structure of the epitaxial crystal containing the group 3-5 nitride semiconductor on the growth substrate 101 shown in Fig. 1 (a) is shown in Fig. 1 (a).

The dormant crystal structure is a layer 3-5 nitride semiconductor layer which is sequentially and has an n-type 3-5-nitride semiconductor layer as a light-emitting layer. A type 3-5 nitride semiconductor having a double heterostructure of a type 3 collar nitride half layer. Preferably, the light-emitting output is sequentially increased. η-type 3_5 $ nitride semiconductor layer 2 is used as the light-emitting layer of the group 3-5 nitride semiconductor layer, the p-type group 3-5 nitride semiconductor layer, and the n+ layer 3_5 group A Group 3-5 nitride semiconductor of a double heterostructure of a nitride semiconductor layer. An undoped Group 3-5 nitride semiconductor layer may be provided under the Group 3-5 nitride semiconductor layer as needed. In such a semiconductor system, a buffer layer made of InGaN, GaN, AlGaN, AlN or the like, an n-type layer made of n-GaN, n-A1GaN, or the like, and InGaN and GaN are sequentially arranged on a substrate such as sapphire. A light-emitting layer composed of AlInGaN or the like, a cover layer made of undoped GaN, undoped AlGaN, or the like, a P-type layer made of Mg-doped AlGaN, Mg-doped GaN, or the like, and n+-GaN The n+ type layer is a layered structure for performing epitaxial growth. If necessary, an undoped Group 3-5 nitride semiconductor layer composed of InGaN, GaN, AlGaN, lanthanum or the like may be provided under the n-type Group 3-5 nitride semiconductor layer. 13 319508 200822190 The n-type layer is generally doped with Si, yttrium, lanthanum, c, or a group nitriding .t semiconductor, preferably doped with a high concentration of Si &lt; Ge 3 -5 nitride semi-conductor. ? The type layer is generally doped with Μ§, Zn, Cd, Be, C, Ca or Hg, and is preferably a nitride semiconductor having a high concentration of ton. The effect of increasing the crystal growth of the crystals containing the 3-5-nitride + conductor and the shifting of the lateral direction f is large, so that the inclusion of the W-type nitride (the epitaxial crystal of the semiconductor is long and thick, Reducing the crystal defects. - In the epitaxial crystal structure shown in Fig. (a), 1 is the buffer layer, 103 is the n-GaN layer, and 1〇4 is the Ιη(} & layers 〇4a to 104E and GaN layers 〇4F to 〇4J are repeatedly grown into five sets of multiple quantum well layers. The multiple quantum well layers 1〇4 are connected to form a cap layer 1〇5, thereby The light-emitting layer can be shaped. 106 is a p-type layer, and 1〇7 is an n+-type layer. The epitaxial group, 1〇〇 is as described above, and has the epitaxial structure of the epitaxial layer formed by the semiconductor light-emitting element. The epitaxial substrate 100 is diced as described later, and a plurality of semiconductor element wafers can be obtained. It is known that the group 3-5-containing nitride semiconductor is included in the first graph (a). After n-type substrate 100 having grown on a daily basis, n + electrification 108 is provided on n + type layer 1 〇 7 (Fig. 1 (8)). In Fig. 1 (8), simplification of 'n+electrode 108 for the sake of explanation The number is 2 However, the number of n+ electrodes 1〇8 is actually set to the number of semiconductor element wafers fabricated using the epitaxial substrate 100. ^ Next, the mesa (the mesa which leaves the η-GaN layer 103 under the epitaxial crystal layer) is performed. Processing, n electrode 14 319508 200822190 109 (Fig. 1 (c)) is formed on the GaN layer 103. These n electrodes 1 〇 9 are corresponding to the η electrode 1 provided in the step of the printing step 第Then, η+electrode pads η〇 (Fig. 2(a)) are respectively disposed on the η+ electrode 108. Thereby, the epitaxial substrate 1 is formed on the growth substrate (sapphire substrate) ιοι The buffer layer 102 and the n-GaN layer 1〇3 formed on the upper surface are provided with a pair of electrodes, and are provided in a state in which a functional layer is provided. In the electrode formation step, first, growth is included. The epitaxial crystal surface of the succeeding Group 3-5 nitride semiconductor is washed as needed, and is used as an ohmic electrode composed of Ni/Au, Ni/Au/Pt, Ni/IT〇, Au particle milk, or the like. Or an ohmic η electrode composed of Tick, A1, IT〇, Ζη〇, or the like, or a surface micro by dry (four) Wei (10)), and an ohmic n-electrode composed of Μ Bu Bu Bu V/A; 1, ITO, ZnO, etc., is formed on the n-type surface which is located on the lower layer of the crystallite crystal. Then, the second diagram is entered. (b) The step shown is to produce a separation groove ηι i. The groove for separating the crystallite crystal formed on the growth substrate 1Q1 into a predetermined unit. Separation, cover, n A plate, κη production, peeling In the step of growing the plate 101, here, the stray crystal separation groove (1) is partitioned to have a surface area equal to or larger than the target element wafer area. However, the separation unit separated by the separation groove 111 is not limited to this. For example, it is also possible to form the target element wafer separation trench (1), and it is preferable to use a plurality of times of lasers to produce the separation trench ηι. Moreover, the separation groove ιπ=, but the use of the buffer layer 102 and the η_ 〇 层 layer 1 〇 3 may also be the only layer 〇 3 of the car, as shown in Figure 2 (b), 15 319508 200822190 with a knife When the bottom surface 111a of the groove 111 reaches the growth substrate 101, the separation groove is formed so that the bottom surface 111a of the separation groove 111 reaches the growth substrate 101 as shown in Fig. 2(b). m, when the stray crystal is laminated in the step described later, the crystal growth can be prevented from growing on the bottom surface 111 a ' of the sub-channel 111, and the separation of the stray crystal into a plurality of regions and separation from the growth substrate can be prevented. The purpose of the trench U1. Further, the fabrication of the separation trenches 111 can reduce the warpage of the epitaxial substrate 1 and make the crystal growth step or processing step of the wafers easy to implement, and also has the effect of improving the in-plane uniformity of each of the properties. In the present invention, in the present invention, a method of manufacturing a semiconductor element having extremely little thermal damage and having a high light-emitting output has been found by various conditions of laser processing during inspection. The wavelength of the laser to be irradiated may be a short wavelength which can be absorbed by the group 3-5 nitride semiconductor. For example, when the energy is large, the energy is large, so the main 3-5-group nitride semiconductor is (10), (10) is about 3.4 eV, and as long as it is shorter than 365 nm, the wave is 'in: The shots are listed as 3 times higher harmonics of YAG and YV4 (wavelength KF:: 4 times 'harmonic (wavelength Μ6-), - (wavelength 193nm), 248η,). XeCl〇^ 〇 Μ Μ - 性 性 性Consideration should be for a thorough or complete 4 lasers. The light to be irradiated is not limited to the above, and for example, introduction of impurities, defects, and the like into the W-type nitride body causes formation of an energy band gap, etc., because the reading of the W-type nitride semiconductor is increased. ^ f is less than the energy of the band gap. For this purpose, 319508 16 200822190. The oscillation form when using laser light can be enumerated, for example, continuous oscillation, positive pulse, oscillation, and Q-switched pulse oscillation. From the viewpoint of reducing heat influence, it is desirable to use a short pulse of ns level. Cw with high peak power excites the Q switch, pulse oscillation. The laser energy to be irradiated is not particularly limited, but if it is too large, it may cause damage to the group 3-5 nitride semiconductor. Further, the thicker the thickness of the epitaxial crystal containing the group 3-5 nitride semiconductor, the more the chips generated by the field processing will increase, which may affect the yield. In order to prevent the re-adhesion of the chips, a protective material such as a photoresist or a f-surface protective material may be applied before the laser processing to remove the chips. In particular, in the case of another embodiment described later, on the crystal layer having a thickness of the separated crystallites other than (4) or more, the second crystal growth is made to contain the group 3-5 nitride containing the action portion of the element. The epitaxial crystal of a semiconductor is particularly effective when grown. The size of the element wafer is not particularly limited, but may be, for example, ι〇〇#ν to 100 mm2, preferably 10000 #m2 to 25 mm2, more preferably 4 m2 to l〇mm2. After the separation groove (1) is produced in the above manner, the substrate 101 is peeled off from the insect crystal layer (Fig. 2(C)). In order to peel the growth substrate 101 from the crystallite crystal containing the group 3-5 nitride semiconductor, there is a method of peeling off the growth substrate by light irradiation, a method of removing the growth substrate by polishing, a peeling method using interface stress, and 0 for growth. A method of engraving a substrate for growth by chemical money near the interface between the substrate and the crystal crystal. In the present embodiment, the method of light irradiation is used. Next, a method of peeling the growth substrate by light irradiation will be described. The growth substrate H)0 is sapphire, and the 3-5 group nitride semiconductor is (4)_, 319508 17 200822190 First, light is irradiated from the growth substrate side. When the light is 3 俨 high-wavelength (wavelength 355·) of the Υν〇4 laser, the growth substrate does not substantially absorb the light absorbed by the 3-5-group nitride semiconductor. Thereby, the growth substrate can be selectively peeled off from the group 3-5 nitride semiconductor. After the light irradiation, the Group 3 material and the nitrogen are precipitated in the region where the Group 3-5 nitride semiconductor is decomposed. The bismuth nitride semiconductor is a Ga material, and Ga is precipitated. Therefore, by setting the temperature to a melting point of Ga (30 C) or more, the growth substrate can be easily peeled off. The large amount of energy which decomposes the group 3-5 nitride semiconductor can be effectively &quot;rately absorbed by the group 3-5 nitride semiconductor, and the light to be irradiated is preferably laser light. The wavelength of the light may be a short wavelength that can be absorbed by the Group 3-5 nitride semiconductor. For example, when the energy is larger than the band gap, the absorption of the 3-5-nitride semiconductor is GaN. Because the band gap of GaN is about 3.4 eV, as long as the wavelength is shorter than 365 nm, the laser can be scaled. YAG, YV〇4 3 times high spectral (wavelength 355nm) field or 4 times higher harmonic (wavelength 266nm), ArF (wavelength l93nm), palpitations (wavelength 248nm), XeC1 (wavelength 3〇8nm) Molecular lasers, etc. From the viewpoint of energy uniformity described later, it is preferable to use a YAG or γν〇4 laser. The light to be irradiated is not limited to the above, and for example, in the case where a dopant of a group 3-5 nitride semiconductor is introduced into an impurity, a defect or the like to generate an intra-band gap level, etc., the absorption of the group 3-5 nitride semiconductor is increased. It can also be light with energy less than the band gap. The oscillation form when using laser light can be exemplified by continuous oscillation, positive pulse oscillation, and Q-switched pulse oscillation, and is considered from the viewpoint of reducing heat influence, and is a short pulse of ns level and an excitation q with high bee power 319508. 18 200822190 Off pulse is exhausted. In order to efficiently decompose the group 3-5 nitride semiconductor in the group 3-5 nitride semiconductor in the vicinity of the interface on the growth substrate, it is preferable that the absorption is larger and the absorption region is appropriately larger. It is also preferable to introduce a low-temperature growth buffer layer made of InGaN or GaN, such as ionization or defects. Regarding the thickness of the appropriate absorption region, the buffer layer also has an optimum value from the viewpoint of growing the ternary nitride semiconductor. From the viewpoint of both, the case of GaN is preferably about 5 〇〇A.

Light can be supplied to the vicinity of the interface between the growth substrate and the tantalum-substance semiconductor in the form of dots, lines, and surfaces. In order to reduce the sapphire stripping step time from the viewpoint of shortening the sapphire stripping step time, it is preferable to shift the focus of the laser light from the growth substrate and the 3-5 group nitride half V body interface when the laser beam is incident on the growth substrate. To the 3-5 family nitride semiconductor side (out of focus). There is a spatial distribution in the moon b of the field, and the substrate for growth is peeled off uniformly in the sa round surface of the left-foot diameter of 2 inches, so that the irradiation area is heavy = 吏! A uniform amount of communication to the interface is preferred. It is better if the substrate is used in the invading area of the laser light. More efficient and lower energy stripping growth When the inorganic particles are blended with 3, the crystals separated from the growth substrate are 35. The crystals of the crystals contain inorganic particles, and the back surface of the vaporized semiconductor may be physically processed. After processing error = chemical, or grinding or grinding: long substrate 舆3_5 nitride semi-conductive is adjacent to the interface or near the peeling, and is arranged to absorb the aforementioned 319508 19 200822190 light, and contains 3 - 5 of inorganic particles The nitride semiconductor can also be stripped of, for example, a different Group 3-5 nitride semiconductor. For example, in a stacked structure of GaN/InGaN/GaN, it contains inorganic

When the region of the particle is in the vicinity of the InGaN or InGaN layer, if the light absorbed by InGaN is not absorbed by GaN (for example, a double harmonic of YV〇4 laser (wavelength 532 nm)), InGaN is thermally decomposed after light irradiation. In the same manner as described above, the Group 3 material and the nitrogen are precipitated, so that the temperature can be controlled from the melting point of the Group 3 material, and the Group 3-5 nitride semiconductor can be easily peeled off.

GaN. Thereby, the two different Group 3-5 nitrides can be selectively selected.

The bulk GaN is peeled off by irradiation with low energy light. When the GaN is used as the substrate for growth, the substrate can be reused as a substrate for growth after the surface is polished.士 = 人人 Detailed 5 children have an epitaxial crystal containing 3-5 group nitride semiconductors with inorganic particles in the vicinity of the peeling interface. It is preferable to teach the crystals of the crystals of the early j 3_5 μ compound semiconductor to be crystallized with the inorganic crystals, and it is preferable to use the substrate for growth. Preferably, the particles of the crystal contain a compound such as an oxide or a nitride. Carbonization: The content of inorganic substances such as petide, sulfide, coded, and metal is generally Α"', (4) or more, and more preferably 95% or more with respect to inorganic particles. Machine: Heavy above 'better' credit cup The composition of the inorganic particles and the inorganic particles may be determined by analyzing the fs light, etc. The oxide may be, for example, cerium oxide, cerium oxide oxide, cerium oxide, cerium emulsified titanium, or emulsified tin. And indium shale (YAG). The bismuth compound is, for example, tantalum nitride or boron nitride. 319508 20 200822190 Carbides are, for example, bismuth carbide (sic), boron carbide, diamond, graphite, fullerene. The boride is, for example, lanthanum boride (ZrB2) or chromium boride (CrB2). Sulfides such as zinc sulfide, cadmium sulfide, calcium sulfide, and strontium sulfide. The lithosparin is, for example, zinc chlorinated zinc, bismuth oxide, oxide, nitrogen. Compounds, carbides, sulphides, sulfides, The element contained in the telluride may be partially substituted by other elements. Examples in which the element contained in the oxide is partially substituted by other elements may, for example, be a sulphuric acid or a sulphuric acid containing ruthenium or osmium as an inert agent. a phosphor of a salt. Examples of the metal include bismuth (Si), nickel (Ni), tungsten (W), button (Ta), chromium (Cr), titanium (Ti), magnesium (Mg), calcium (Ca), Aluminum (A1), gold (Au), silver (Ag), zinc (Zn). The inorganic particles may also be formed by heating to form the aforementioned oxides, nitrides, carbides, borides, sulfides, selenides. For the metal material, for example, it may be silie_. The polyoxyl system is a polymer having an inorganic bond of S1(5) as a main skeleton and an organic substituent in Si. If it is heat-treated to about 5 (8), c is a oxidized stone. The inorganic particles may be one of the above-mentioned inorganic substances, or any of these: or an inorganic substance: The emulsion is more preferably composed of cerium oxide. The mixture is better than the combination of the milk-cut particles and the oxide particles other than the oxygen cut, and more preferably the combination of the dream particles and the titanium oxide particles. The composite may be exemplified by an oxide having particles on a particle composed of a disorder. Plate shape? The shape may be spherical (for example, a circle or an ellipse), a plate shape (length L/th length L/T is 15 phantom 00), and a needle 319508 21 200822190 (for example, width W and length L) L/ is 15 to! (The particles containing various shapes have a shape that is irregular or indefinite. Therefore, the inorganic particles are more preferably spherical oxidized stones, preferably the balls are dispersed and the particle size can be easily compared. The viewpoint of the tidy is the colloidal oxidized stone eve. The oxidized oxidized stone of the oxidized stone of the corpus callosum is dispersed into a colloidal form in the recommended use, and can be separated from the 1 (water) by a salt such as tetraethyl hydride. The acid (TE0S) has (4) the compound solution: = clothing. In addition, the average particle size of the inorganic particles is generally: ― above, more preferably (U... above; and preferably l〇#m or less, more preferably For the range of 5 〇 "m or less, the inorganic particles in the range described above can be "stripped particles: the average particle size is determined by the centrifugal precipitation method. The volume average particle diameter can also be determined by two methods other than centrifugal precipitation. , Kotku Shiyan, such as the dynamic light scattering + Coulter eounter method, laser diffraction method, audition, etc. For the determination, the volume average particle diameter measured by the method of sinking can be determined. For example, the average particle size as the standard particle is determined by the method of centrifugation: method: particle size measurement: The correlation coefficient is determined by calculating the phase of the average particle diameter measured by the centrifugal pedestal method with respect to the complex standard particle of the particle size, and preparing a calibration curve. The volume average particle diameter can be determined from the average particle diameter determined by a measurement method other than the centrifugal precipitation method. The arrangement of the inorganic particles can be carried out, for example, by impregnating the substrate with the inorganic particles and the solvent 319508 99 200822190. The method comprises the steps of: coating or spraying the slurry on the substrate and drying. The solvent comprises water, methanol, ethanol, isopropanol, n-butanol, ethylene glycol, dimethylacetamide, methyl ethyl ketone, A The isobutyl ketone-etc. is preferably water. The coating method is preferably carried out by spin coating. According to this method, the arrangement density of the inorganic particles can be made uniform. Drying can also be carried out using a spinner. Coverage rate When the surface of the substrate on which the inorganic particles are disposed is observed from above by a scanning electron microscope (SEM), the number of particles P in the field (area S) and the average particle diameter d of the particles are measured, and the following formula is obtained. % ) =(((1/2)2χπ · P· l〇〇)/s The coverage of the inorganic particles on the substrate is generally 1% or more, preferably / or more, more preferably 50% or more; generally 95% In the following, it is preferable that the following is more preferably 80% or less. From the viewpoint of easy planarization after epitaxial growth of the semiconductor layer, the inorganic particles are generally disposed on the substrate, for example, 9 % by mass of the inorganic particles = upper alignment device Although it is one layer, if the semiconductor layer can be epitaxially grown and planarized, it may be two or more layers. It is also possible to arrange at least two layers of a single type of inorganic particles, or to arrange at least two kinds of inorganic particles in a single layer. When at least two kinds of inorganic particles are disposed in combination with the oxidized crystal particles and the oxidized stone particles, the coverage of the inorganic particles (for example, titanium oxide) disposed on the substrate is preferably 1% or more, preferably 30% or more. Generally, it is 95% or less, preferably 9 % or less, more preferably 80% or less. The coverage of the inorganic particles (for example, oxygen chopping) disposed on the second and subsequent substrates is generally 1% or more, preferably 3% by weight or more, more preferably 50% or more, and generally 95% or less, preferably 319,508. 23 200822190 The next 'more suitable is less than 80%. Next, a step of growing a W crystal containing a Group 3-5 nitride semiconductor on a long substrate by embedding inorganic particles to form epitaxial crystals containing inorganic particles will be described with reference to Fig. 5. In the first place, the inorganic particles 302 are disposed on the surface 3〇1A of the growth substrate 3〇1, and the inorganic particles 302 disposed on the surface 3〇ia of the growth substrate 3〇1 are grown in the growth of the Group 3-5 nitride semiconductor. The function is a mask, and when there is no inorganic particle 302, it becomes a growth region 301B. Further, after the inorganic particles 3〇2 are disposed on the surface 301A of the growth substrate 3〇1, the growth of the sharp convex structure is performed in the growth region 301B (Fig. 5(b)). Then, if the 3-5-group nitride semiconductor 3 〇3 is grown in such a manner as to promote the lateral growth and bury the convex structure and make the flat soil (苐5 (c)), the sharp convex shift is achieved. Since the bit can be bent in the lateral direction, the inorganic particles 302 can be buried in the group 3-5 nitride semiconductor layer 303. At this time, the crystal defects can be greatly reduced. When the buffer layer 1〇2 is laminated on the growth substrate 1〇1 in the laminated structure shown in FIG. 1(a), the inorganic particles are placed on the rising surface according to the description of FIG. In the peeling step shown in Fig. 3(b) to be described later, the advantage that the peeling of the growth substrate 101 can be easily performed can be obtained. Next, the steps after the steps shown in Fig. 2(c) will be described with reference to Figs. 3 and 4. The step of Fig. 3(a) is to adhere the resin tape 112 to the epitaxial substrate 1A. Specifically, the resin tape 112 is adhered to the surface opposite to the growth substrate 101. That is, the adhesive surface of the resin tape 112 is adhered to the η+ electrode pad 110 or/and the η electrode 108, and the like, whereby the component wafers separated by the trenches 319508 and 200822190 are adhered to the resin tape 112, respectively. It can be supported by the resin tape 112. In the case where the epitaxial crystal of the growth substrate 101 仉3 is separated from the growth substrate 101 by using the resin tape 112, the tape 112 is peeled off from the growth substrate 1〇1, and the damage is caused by the damage of the second (four) crack. Better. When the light extraction surface is a tree, the component surface must be reversed. Such a grade of crystallization::= = when it is carried out on the resin tape 112, it is preferable to reduce the damage such as cracks. In the next day, the turtle is peeled off, and the substrate for the growth of the substrate is removed. The processing of the crystallized crystal is carried out, and it is carried out on the resin tape 112, and it is preferably processed at one time. Moreover, it is preferable to improve the characteristics of the components obtained by processing the mites at the insect mites. f 1, can be wet _, dry (four), grinding [, the effect of candidization, steaming bells have the effect of removing the damage layer, flat. , "Finance" removal of reflected light, and prevention of cracking The type of resin tape m is not limited, but the substrate is Pvcv acrylic acid tape. In particular, when the component wafer is left in a state of being damaged by a loop or the like, and the damage is reduced, the crack is preferably (4) stretched, and the damage can be caused by the low crack of the beautiful material. Considering the thickness of the base film of the resin tape m, it is preferable to use the _μιη or less. Resin tape is suitable for thinner ones. It is better to be better than the thinner ones of 319508 25 200822190. From Defeng (four), it is better to be weaker, and more suitable for carrying; : The film will be in the step shown by 3 L(b), and the appropriate method is used to crystallize each component from the component ^:(4)^^Fig. 'Lines; ^ 70 70-face adhesive reversal with resin tape 113 ° used in the yuan resin ribbon, if transferred to the adhesion of the same way Lu W calcium 5 grease tape, can reduce cracking It is better to wait for damage. In the figure: r = r, the stalk is peeled off by the resin tape 112, and the element surface is reversed. In such a step, the manufactured in the resin tape n is, for example, a thin piece of 〇 左右 左右 , , , , , , , , , , , , , , , , 针 针 针 针 针 针 针 针 针 针 针 针 针 针 ; ; ; ; ; Break through the destruction of the wafer, etc.; and: 2: C, the implementation of the subsequent inspection, packaging and other steps. In the case of the sealing step, the individual ligament tapes 113 are attached to the tree material of the Japanese priest 3 (d) by the needle TF. After installation, the package or sub-mounting, etc., and then sealed with resin, etc., that is: ^ ^ ^ ^ 仃 仃 绿 绿 绿 绿 如此 如此 如此 如此 如此 如此 如此 如此 如此 如此 如此 如此 如此 如此 如此 ; ; ; ; ; ; ; ; ; The mounting type can be applied to the light-extracting surface of the body. However, the sealing member of the component and the light-removing surface are present on the side of the electrode-side electrode. In the case of the flip-chip type light-emitting element on the turn side and the light-emitting element, the area is reduced, and the heat dissipation property is improved. Aa U ’ 因 因 可 因 因 因 因 因 弟 弟 弟 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 First, as shown in Fig. 6 (4), the buffer layer 202 f is made long on the growth substrate 201. Here, the growth substrate 2〇1 is a sapphire substrate. Next, a separation groove 221 is formed. The separation groove 221 is provided in the same manner as the separation groove 111 in the embodiment shown in Figs. i to 4 . In the substrate 201 for growth, the epitaxial crystal containing the group 3-5 nitride semiconductor grown and grown as described later is brought to the growth substrate 201 before being peeled off from the growth substrate 1 . The separation groove 221 is formed in the buffer layer 202 as a crystal layer of the insect crystal. The system of the separation groove 221 can be exemplified by dry etching, wet etching, laser processing, and cutting: ^: In order not to use the lithography technique, the process is simplified, and the processing is simplified, processing, and processing. Preferably, it is capable of preparing a fine separation trench and a laser processing efficiency of π. For example, even if the cat crystal is relatively thick at i (four) or more, the processing width can be reduced, and productivity can be improved. The bottom surface 221a of the separation groove 221 is formed on the growth substrate 2 (n. Here, in the step shown in Fig. 4 (4), another insect growth is performed on the buffer layer 2G2 (the second crystal growth) In the case where the crystal growth is carried out in the separation groove 22, the surface of the bottom surface 221 &amp; Processing the surface of the stone, so it will produce a stone that inhibits the growth of the epitaxial crystal = that is, by the growth of the second crystal, the first half of the nitride semiconductor is contained, and the separation of the semiconductor is included. Since there is crystallization in the separation groove due to 彳, from the viewpoint of (4) from the substrate for growth, not only the epitaxial crystal of the conductor containing the 3-5 group nitrogen 319508 27 200822190, but also the sapphire is about the second = 曰 成, thickness The above separation groove is better. When cutting and adding I, laser processing _ clothing as a separation groove, 'because the gentleman in the separation groove is a flaw! - The point is also good, and the better one is laser processed 曰曰Do not grow, so from this point of view, in the next step, as shown in the 6th, in the buffer When the epitaxial crystal is grown in the step, it is possible to suppress the inner filament of the separation groove 221. In the sixth embodiment, the buffer layer is followed by the stupid crystal and the layer of the layer is the same as that shown in Fig. 1 (4). That is, the 2〇3 series n-GaN layer. The 204 series repeats (4) the multiple quantum well layers formed by the layer stacking to the (4) to 304J growth group 5. The connection is formed in the Xiulizi well layer 204 to form the cover layer 2〇5. Thereby, a light-emitting layer can be formed. 206-type p-type layer, 207-type n+-type layer; human; as shown in Fig. 7 (4), formed on the η+-type layer 2〇7 and then subjected to epitaxial crystallization of the lower layer The surface on which the separation groove 221 is exposed is formed on each of the separation grooves 221 to form an n electrode 209 (Fig. 7(b)), and an electrode pad 21 is formed on each of the n electrodes 2A (Fig. 7 (4)). This state corresponds to the state of Fig. 2(b). In the step (a) of Fig. 8, the irradiation of f from the side of the growth substrate 2〇1 is performed in the step of Fig. 8 (8). The substrate fine-adhesive resin T 211 resin tape 211 is adhered to the surface opposite to the growth substrate 2〇1, that is, the adhesive surface of the resin tape 211 is adhered to the n+ electrode pad 2=or/and the n-electrode 2〇8 Wait, In this way, the slabs of the slabs separated by the separation grooves π! are in the state of the resin tape 211. In the step shown in Fig. 8(c), the growth substrate 2〇1 is used. 28 319508 200822190 The component wafer is peeled off by an appropriate method. In the step of Fig. 9 (3), the component surface inversion resin of the component wafer is wound with the resin 212. In the second step of Fig. 9 (8), the resin tape 211 is peeled off. Next, in the encapsulation step, each element wafer is mounted by moving it to the package or the sub-mount by means of a needle ejecting from the resin tape 212 on the ninth drawing. After the mounting, the wiring is lapped on the component wafer as needed, and then sealed with a resin or the like to form a light-emitting diode. (Embodiment) The present invention will be specifically described by way of examples, but the invention is not limited thereto. Implementing 丨1 The growth substrate is a mirror-polished 430μιη thick sapphire (0001). On the substrate for growth, a Group 3-5 nitride semiconductor is grown. The growth system uses the MO VPE method. The temperature of the support (suscept〇r) was 485 t at 1 atm, and hydrogen was used as a carrier gas, and carrier gas, ammonia, and T/G were supplied to grow into a low-temperature growth QaN buffer layer having a thickness of about 5 Å. The two made the support temperature 1 〇 4 〇. The furnace pressure is reduced to 1/4 atmosphere for the carrier emulsion, ammonia and TMG to form a high temperature grown undoped GaN buffer layer. Then, a carrier gas, ammonia, TMG, and a siloxane are supplied to form an n-type layer composed of GaN of Cezan Si. From the growth temperature of 1〇4〇. 〇 Slowly cool to room temperature. ▲ By re-growth, an n-type layer composed of GaN doped with GaN, a double-heterostructure barrier layer made of GaN and InGaN, an electric well layer (multiple sub-well structure), and GaN are sequentially formed. And a cover layer composed of A1GaN 29 319508 200822190, a p-type layer made of Mg-doped GaN, and a layer formed of doped InGaN, and the thickness of the crystal is 2〇μηη, showing blue light emission 3 - Group 5 nitride semiconductor. (Preparation of ohmic η + electrode) The grown 3-5-nitride semiconductor is subjected to 〇〇2 〇〇2 〇〇2〇 heat treatment to form a p-type layer with low resistance ρ Then, in order to form an ohmic η+ electrode on the surface of the 3-5-nitride semiconductor, the surface of the arsenic nitride semiconductor is first washed, which is washed with an ultrasonic solution of acetone to make 6 (TC nitric acid). This is carried out in the order of washing with a solution of hydrochloric acid at a ratio of 1:3 (hot aqua regia) and ultrasonic cleaning of ultrapure water. Then, in order to form an IT crucible electrode constituting an ohmic n+ electrode, vacuum evaporation is performed. The shovel device plugs the ITO 140nm and sequentially performs photoresist coating on the surface. After the photoresist is baked, the pattern is exposed, and the pattern is developed, the solution is prepared by dissolving the aqueous solution of ferrous chloride and hydrochloric acid in a ratio of 1:1, and forming an electrode of the ιτ〇 electrode pattern After that, the remaining photoresist is peeled off. (# (Production of ohmic η electrode) Next, 'lighting is performed on the n-type layer to perform n-type layering' etching epitaxy (mesa shape). CH2C12, Ar ink An ohmic n-electrode of a group 3-5 nitride semiconductor is formed at a force of 0.8 Pa, and the exposed region is patterned. Specifically, the surface resist coating, photoresist baking, pattern exposure, and pattern imaging are performed. The patterning of the exposed area. Secondly, the surface of the n-type layer is exposed by ICP dry etching to the depth of the exposed type 11 layer, and the gas is used in the ICP dry-type engraving system Cl2, the mixed gas, and the gas flow rate is 20, respectively. L〇, 4〇sccm, ICP power is 200W, bias power is 1〇〇w. Dry 319508 30 200822190 After the end of the etching, remove the excess mask with organic solvent. Secondly, on the exposed surface of the n-type layer, In order to form an ohmic η electrode V/A1 (vanadium/aluminum) ~ electrode, and here After the photoresist coating, photoresist baking, pattern-exposure, and pattern development were sequentially performed on the surface, V (vanadium) was deposited by a vacuum evaporation apparatus to 10 nm, and then A1 (aluminum) was evaporated to 100 nm. The V/A1 electrode pattern is formed by Lift-off. (Formation of electrode pad) Next, on the surface of the IT0 electrode, in order to form an i Ti/Au (titanium/gold) electrode pad as an electrode pad, On this surface, photoresist coating, photoresist baking, pattern exposure, and pattern development were sequentially performed, and then Ti 50 nm was deposited by a vacuum evaporation apparatus, followed by vapor deposition of Au 200 nm. Secondly, the Ti/Au electrode pad pattern is formed by the removal method. (Separation of grooves by laser processing) A separation trench of a Group 3-5 nitride semiconductor is produced by laser light. The irradiated laser light system uses a CW-excited YV04 laser 3 times higher harmonic (wavelength / 355nm) to form a pulse with a frequency of 35KHz by a chopper. The Q-switch pulse width is about 8 ns, and the oscillation mode is TEMoo, 3 times higher. The output of the harmonics is approximately 0.2W on the sample side. This laser light is incident from the side of the surface of the group 3-5 nitride semiconductor, and is irradiated so that the focus position comes to the surface. The separation groove width is 20 μm or less. The console was scanned at 10 mm/sec, and after one line scan was completed five times, the console was moved in parallel depending on the component size (i.e., 420 μm). By repeating this operation, the 3-5-group nitride semiconductor is irradiated with laser light in a mesh shape, and is divided into a plurality of regions having an area of the element wafer of about 420 μπι 420 μm. 31 319508 200822190 (Laser irradiation for substrate stripping)

In order to remove the substrate for growing gemstones, eight people irradiate the sapphire with laser light. The light that is irradiated emits a pulse of 3 times higher harmonics (wavelength 355ηπι) of the CV-excited YV〇4 laser by a chopper to form a pulse of 15 kHz. The Q-switch pulse width is about 8 ns, and the vibration mode is τ gas, 3 times. The output of the high-spectrum wave is about A 〇.42w on the sample surface. This light was incident from the side of the blue f-stone substrate so that the focus position was defocused from the sapphire/3-5 nitride semiconductor interface to the position of the GaN side 45 〇 μηη. The sample was vacuum-adsorbed and fixed in operation, and the linear scanning was performed at 35 〇/sec, and after one line scanning was completed, the parallel movement operation was carried out by 15 _. Repeat the line scan to fully illuminate the sapphire. The sample after the light irradiation was placed on the center of the resin tape which was fixed to the ring of about 4 inches. The resin tape was placed on a PVC/acrylic base film of about 70 μ thick and placed on a layer of about 1 inch thick. It is a thin film with a force of 18gf/25mm. /Special film adhesive layer is a sample with a thin thickness and adhesive light after the end of the irradiation. If viewed from the sapphire side, it can be seen that the blue-stone and the 3_5-nitride semiconductor interface are all in the vicinity of the interface. gray. The discoloration near this interface was mainly analyzed by investigation. (Step of peeling off the substrate and resin tape for reversing the surface of the component)

To strip the sapphire, the sapphire placed on the resin tape is facing up, and the 3-5 nitride-free semiconductor surface faces the sapphire. At this stage, 1 = 4 is heated to the window of the semiconductor semiconductor 5 轫崎 on the resin tape of the 5 group nitriding - I shell 丨 丨 面 / / / 文 缓冲 缓冲 缓冲 buffered hydrofluoric acid (BHF) 10 minutes , 319508 32 200822190 Remove the residual Ga when sapphire separation. The resin tape of the same kind was placed from the above-mentioned resin tape on which the sample having the sapphire peeling surface upward was placed, and the surface side of the group 3-5 nitride semiconductor was turned up one by one. (Package) Next, the component wafer of 420 μm is picked up by means of a pin-out method, and is packaged on a surface package having an Ag contactor by a Α1 Ν ceramic, and adhered to the wafer by Ag adhesive. Then, the wafer is sealed by a step of coating, defoaming, and hardening with a polyoxyalkylene resin to form a surface-mounting lamp. (Element evaluation) By the above steps, a 20 μπ thick thickened substrate can be obtained. A light-emitting element of a group 3-5 nitride semiconductor. When the light-emitting element is driven at 20 mA, a clear blue light emission is displayed, and the total radiation beam is measured by an integrating sphere to be 13 mW. When driving at a high current, the light output is up to 300 mA. (Increased. The element was not broken until 960 mA. Examples 2 to 5 were prepared in the same manner as in Example 1 except that the thickness of the Group 3-5 nitride semiconductor was 15 μm, 25 μm, 30 μm, and 3 5 μm. A light-emitting element of a group nitride semiconductor. When the light-emitting element is driven at 20 mA, a clear blue light emission is displayed, and the total radiation beam is measured by an integrating sphere, which is the same as in the first embodiment. When driving at a high current, the light output is up to 300 mA. Increased. The component has not been destroyed until 960 mA. 33 319508 200822190 Comparative Example 1 ^ The same as Λf except that the thickness of the 3-5-nitride semiconductor is 5 μm A light-emitting element of a group 3-5 nitride semiconductor is formed. When the substrate for growth is peeled off by the above steps, a crack phenomenon occurs, and when the light-emitting element is driven at 20 mA, almost no light is emitted. Comparative Examples 2 to 6 3-5 The thickness of the nitride semiconductor was 15 μm, 20 μm, 25 μm, 30 μm, and 35 μm, and the light-emitting device of the group 3-5 nitride semiconductor was produced in the same manner as in Example except that the separation trench was not formed. In the case of the substrate, cracking occurred, and when the light-emitting device was driven at 20 mA, almost no light was emitted. Example 6 Except that the peeled surface was polished in a state where the resin tape was placed on the sample with the sapphire peeling surface facing up, the rest and Example 1 In the same manner, a light-emitting element of a Group 3-5 nitride semiconductor was produced. The peeled surface of the Group 3-5 nitride semiconductor was polished to a depth of about 100 nm. When the surface of the polished surface was evaluated by a stylus step, it was found that the surface was flattened. When the light-emitting element is driven at 20 mA, a clear blue light emission is displayed, and the total radiation beam result is measured by an integrating sphere, which is the same as in the embodiment 。. In the case of the movement, the output of the light is increased to 300 mA. The number of the elements is not broken until 96 〇 111 八. Example 7 Except that the peeled surface is dry etched while the resin tape is placed on the sample with the sapphire peeling surface facing up, The rest is carried out in the same manner as in the example, 319508 34 200822190. A light-emitting element of a group 3-5 nitride semiconductor is formed. The epitaxial crystal is etched to a depth of about 100 nm by ICP dry etching. The etching gas used for ICP dry etching is Cl2. The mixed gas of CH2C12 and Ar is gas flow rate of 20, 10, 40 sccm, pressure of 0.8 Pa, ICP power of 200 W, and bias power of 100 W. When the light-emitting element was driven at 20 mA, a clear blue light emission was displayed, and the total radiation beam measurement was measured with an integrating sphere, which was the same as in the first embodiment. When driven at high current, the light output increases up to 300 mA. In the case of 960 mA (the component was not broken. Example 8) The same procedure as in Example 1 was carried out except that the sample was deposited on the resin tape with the sapphire peeling surface facing up. A light-emitting element of a group nitride semiconductor. When the light-emitting element is driven at 20 mA, a clear blue light emission is displayed, and the result of measuring the total radiation beam by the integrating sphere is the same as in the first embodiment. When the current is driven by the south current, the light output is up to 300 mA. With the increase of 960 mA, the parts have not been destroyed. Examples 9 to 11 except that the resin tape used for peeling sapphire has an adhesive force of about 70 μm/25 mm, 70 gf/25 mm on a PVC/acrylic base film of about 70 μ thick. The adhesive layer of about 10 μ thick or the adhesive layer of about 10 μ thick having an adhesive force of 130 gf/25 mm on a PVC/acrylic base film of about 65 μm was prepared in the same manner as in Example 1 to prepare 3- Light-emitting element of Group 5 nitride semiconductor. 35 319508 200822190 When eight components are produced, the blue light is displayed (four), and the total beam of the ball is measured, which is the same as in the first embodiment. The high current = two MOOmA is The light output was increased. The 70 explosions were not broken. Comparative Example 7 A light-emitting element made of a Group 3-5 nitride semiconductor was carried out in the same manner as in the Example except that the resin tape was not used for the sapphire removal. When the substrate for growth was peeled off, a crack phenomenon occurred, and when the light-emitting element was driven at 20 mA, almost no light was emitted. Example 12 Before the separation trench of the group 3-5 nitride semiconductor was formed by laser light, the group 3-5 nitride semiconductor was used. The surface of the disk was coated with the surface protective material in the same manner as in Example 1, except that the light-emitting element of the group 3-5 nitride semiconductor was formed in the same manner. The coated surface protective material was removed by acetone. On the surface of the nitride semiconductor, the chips on the entire wafer are found (all have been removed. By the above procedure, the light-emitting elements of the thick galvanic nitride semiconductor which has been stripped of the growth substrate can be transferred to the other. The illuminating element=%, the insignificant blue illuminating is given, and the whole beam is measured by the integrating sphere. The soldier is only the same as the example 1. When driving with high current, the light output is up to 3 mA. The component was not destroyed until 960 mA. The same procedure as in Example 1 and 36 319508 200822190 was carried out except that a 3 nitrite semiconductor device in which inorganic particles were disposed and a laser irradiation condition for changing the substrate peeling were used. A light-emitting element of a -5-nitride semiconductor. The inorganic particles are cerium oxide particles contained in a colloidal cerium oxide slurry (manufactured by Nippon Shokubai Co., Ltd., Seahostar KE-W50 (trade name), average particle diameter: 550 nm). The growth substrate was attached to a spinner, and 20% by weight of a colloidal cerium oxide slurry was applied thereon, followed by spin drying. When observed by SEM, it was found that the colloidal cerium oxide particle coverage on the surface of the growth substrate was 60%. Then, the 3 - 5 family of vaporized semiconductor crystals are grown to make the colloidal oxide dream particles buried in the nitride semiconductor layer. The epitaxial growth system uses M0VPE (method. The temperature of the support is 485 ° C at 1 atmosphere, hydrogen is used as a carrier gas, and carrier gas, ammonia, and TMG are supplied to grow a low temperature growth GaN buffer layer having a thickness of about 500 Å. Secondly, after the temperature of the support is 900 ° C, the carrier gas, ammonia and TMG are supplied to form a high-temperature-grown undoped GaN buffer layer, and then the support temperature is 1040 ° C and the furnace pressure is lowered to 1. /4 gas pressure, supply carrier gas, ammonia and TMG to form a high-temperature-grown undoped GaN buffer layer. Then, supply carrier gas, ammonia and TMG, and xenon oxide f to form η composed of GaN doped with Si After the thickness of the full layer is 20 μm, the layer is gradually cooled from room temperature to 1040 ° C to room temperature. Then, an n-type layer made of GaN doped with GaN is sequentially formed in the same manner as in the first embodiment, and GaN is formed. And a barrier layer and an electric well layer (multiple quantum well structure) composed of InGaN, a cladding layer composed of GaN and AlGaN, a p-type layer composed of Mg-doped GaN, and a Si-doped InGaN The n+ type layer is made of a Group 3-5 nitride semiconductor that exhibits blue light emission. The irradiation conditions of the laser light for the substrate peeling are 37 319508 200822190 outputted at 3 times higher harmonics on the sample surface at 0 26w. Therefore, if the light is taken from the "stone two" "&quot; fΓ Ν κ ^ The sample after the light irradiation is visible, and it can be seen that the blue, the inch, and the king face are uniformly changed from transparent to gray. The above steps are taken from the blending system, and the growth substrate is stripped. ^ Telluride + ¥ The body of the light-emitting element. 2 a thick 3_5 nitride semi-conductive

When the light-emitting element is driven by a good eight, and the second light-emitting element is driven, a clear blue light is emitted, and the result of the shell knife radiation beam is an example! The light output is about u: When driving at a local current, the light output increases as it reaches 300 mA. The component has not been destroyed up to 960 mA. Example 1 4 Except for the growth of the substrate! The growth of the crystal grows the buffer layer containing the 3_5 group + conductor, and the buffer layer is separated by the separation trench, and has a plurality of regions of the same area as the area of the target wafer, and then the buffer layer is separated. In the same manner as in the first embodiment, the L5-group nitride semiconductor light-emitting device was formed in the same manner as in the first embodiment except that the functional layer of the metal semiconductor was grown by the growth of the second crystal. The HVPE method was used to grow the undoped GaN buffer layer to a full layer thickness of 2 μm on the growth substrate. Secondly, the separation trench of the 3-5-nitride semiconductor is fabricated by laser light. The illuminating light system CW excites 3 times the length of the 4 lasers.) By the wave, the pulse wave with a frequency of 3 OKHz is formed. The Q-switch pulse width is about 8 ns. The output of the 3x high-spectrum wave is about 0.2W on the sample surface. This laser light is incident from the surface side of the buffer layer, and is irradiated to the crystal surface at the focal position of 319508 38 200822190. The separation groove width is less than or equal to 1 channel. Operation fine 10mm/sec scanning, 1 i line sub-scanning 5 - After the end of the owing, according to the component size 42 -, move the operation in parallel. Repeat this operation: the buffer layer is irradiated with the mesh-like laser light' A multi-region of the area of the component wafer, which is about 420 μm, is formed by 再, and then grown to form an n-type layer made of doped GaN, a double-heterostructure barrier layer composed of GaN and InGaN, and a well layer. (Multiple quantum well structure), the layer consisting of _ and the edge is electrically formed by a p-type layer composed of GaN mixed with M+g, and an n-type layer formed by the ground of the junction si is made to have a thickness of 25 μm. , showing blue-emitting 3 family nitride semiconductors. The growth of the first crystal is performed on the growth substrate, and the buffer layer containing the 3·5 Wei compound half (four) is grown, and the buffer layer is separated into a plurality of regions having the same area as the target device wafer by the separation groove, and then On the separated crystal layer of the insect crystal, the second crystal is grown by a crystal of a Group 3-5 nitride semiconductor containing a nitride layer and grown in the same manner as in Example i, and the composition can be obtained in the same manner as in Example i. A light-emitting element of a 25-th thick group of a nitride semiconductor of a thickness of 25 mm is peeled off from the substrate for growth. When the light-emitting element is driven at 20 mA, a clear blue light emission is displayed, and the result of collecting the total radiation beam by the integrating sphere is the same as that of #_丨. When the drive is 'from 30 () mA, the light output increases. The component is not destroyed until 96QmA. (Industrial use possibility) 319508 39 200822190 According to the manufacturing method of the present invention, the body element can be obtained. Manufacturing method: The semi-conductor of the second is greatly relaxed, and the productivity such as yield is improved. The manufacturing method of the second limit of ^^ can be obtained by crystallized crystals containing independent 3_5, ^, x Ming. The semiconductor element is composed of the independent flow density of the semi-object, and displays a high-luminous output. Therefore, it is not only used for high-intensity, but also for the use of the DT7 J for the purpose of lighting. For the purpose of high-brightness, such as the outside of the house, etc. ”, 贞^, and the signal lamp [simplified description of the drawing] The system (4) is a partial step diagram for explaining the consistent configuration of the manufacturing method of the semiconductor device of the present invention. The graphs of the method 2) to (4) are partial step diagrams for explaining the consistent embodiment of the coating &amp; method of the semiconductor device of the present invention. = 3 _ to (4) are partial step diagrams for explaining one embodiment of the method for producing a semiconductor device of the present invention. / A partial step diagram for explaining the method of manufacturing the semiconductor device of the present invention is shown in the drawings. =5 (a) to (4) are step diagrams showing a method of laminating a buffer layer for elongating the growth substrate and the buffer layer. Fig. 4 (4) to (4) show partial step diagrams for explaining another embodiment of the method of manufacturing the semiconductor device of the present invention. Fig. 7 (a) to (c) are partial step views for explaining another embodiment of the method of manufacturing the semiconductor device of the present invention. Fig. 4 (4) to (4) show partial step diagrams for explaining another method of manufacturing the semiconductor device of the present invention, 319508 40 200822190. Fig. 9 (a) to (C) are partial step views showing another embodiment of the manufacturing method of the semiconductor device of the present invention. ~ [Main component symbol description] f 100 Amorphous substrate 101, 201, 301 Growth substrate 102, 202, 203 Buffer layer 103, 203 η - GaN layer 104, 204 Multiple quantum well layers 104A to 104E InGaN layer 104F to 104J GaN Layer 105, 205 cap layer 106, 206 p-type layer 107, 207 n+ type layer 108 - 208 n + electrode 109, 209 n electrode 110, 210 n + electrode pad 111, 221 separation groove 112, 211 resin tape 113, 212 Resin tape 301A for component surface reversal Surface 301B Growth region 302 Inorganic particles 319508 41

Claims (1)

200822190 X. Patent Application Range: 1 . A method of manufacturing a semiconductor device using a substrate for growth to fabricate a semiconductor device comprising epitaxial crystals of a group 3-5 nitride semiconductor, characterized in that a separation trench is formed. In the step, the separation groove is a separation groove that separates the epitaxial crystal into a plurality of regions and is detachable from the growth substrate. 2. The manufacturing method according to claim 1, wherein the epitaxial crystal containing the group 3-5 nitride semiconductor is grown on the growth substrate; and the epitaxial crystal is separated into a plurality a step of separating the grooves in the regions; and a step of obtaining the semiconductor elements by peeling the growth substrate as described above from the remote crystals. 3. The method of manufacturing the ninth aspect of the invention, comprising: forming a buffer layer by growing an epitaxial crystal containing a group 3-5 nitride semiconductor on the growth substrate; a step of forming a plurality of regions of separation trenches; a step of growing an epitaxial crystal containing a group 3-5 nitride semiconductor on the separated buffer layer to form a functional layer; and obtaining a semiconductor by stripping the growth substrate The steps of the component. 4. The manufacturing method according to any one of claims 1 to 3, wherein the thickness of the epitaxial crystal is 1 〇μηη or more. The manufacturing method according to any one of the items 1 to 4, wherein the epitaxial crystal is grown by MOVPE. The manufacturing method according to any one of the above-mentioned claims, wherein the epitaxial crystal is grown in the order of HVpE/M〇pVE. The manufacturing method according to any one of claims 1 to 3, wherein the separation groove is made by laser. The manufacturing method according to any one of claims 1 to 7, wherein the epitaxial crystal is bonded to a growth substrate on a resin tape to form a target device wafer. The manufacturing method according to any one of claims 1 to 8, wherein the inversion of the element surface of the epitaxial crystal is carried out on a resin tape. The manufacturing method of any one of the items 1 to 9 of the patent application, wherein the processing of the epitaxial crystal is performed on a resin tape. The manufacturing method according to any one of the preceding claims, wherein the epitaxial crystal is configured by the epitaxial crystal of the inorganic particles. In the method of manufacturing, the inorganic particles are cerium oxide. The method of any one of the above claims, wherein the detached surface of the eutectic crystal is chemically and/or mechanically The method of any one of claims 1 to 13, wherein the semiconductor element is a light-emitting element. 319508 43 200822190 1 5 · As claimed in any of claims 1 to 14 The method of the present invention, wherein the epitaxial crystal system comprises an n-type group 3-5 nitride semiconductor layer, a group 3-5 nitride semiconductor layer as a light-emitting layer, and a p-type 3-5-nitride semiconductor layer. And a bis-type 3 -5-nitride semiconductor layer having a double heterostructure of a group 3 - 5 nitride semiconductor. 16 - A semiconductor device, the manufacturing method of any one of claims 1 to 15 Produced by 319508 44