TW200818428A - Electronic apparatus - Google Patents

Electronic apparatus Download PDF

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Publication number
TW200818428A
TW200818428A TW95137079A TW95137079A TW200818428A TW 200818428 A TW200818428 A TW 200818428A TW 95137079 A TW95137079 A TW 95137079A TW 95137079 A TW95137079 A TW 95137079A TW 200818428 A TW200818428 A TW 200818428A
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TW
Taiwan
Prior art keywords
component
electronic device
substrate
electrical connection
electrically connected
Prior art date
Application number
TW95137079A
Other languages
Chinese (zh)
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TWI389274B (en
Inventor
Kwun-Yao Ho
Moriss Kung
Chih-Long Ho
Ming-Lin Tsai
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Via Tech Inc
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Priority to TW95137079A priority Critical patent/TWI389274B/en
Publication of TW200818428A publication Critical patent/TW200818428A/en
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Publication of TWI389274B publication Critical patent/TWI389274B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Abstract

An electronic apparatus including a first substrate, a base-band component, a radio-frequency module, and at least one first electrical connection member is provided. The base-band component is electrically connected to the first substrate, and the radio-frequency module is electrically connected to the first substrate through the first electrical connection member.

Description

200818428 J〇98 21419twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種電子裝置，且特別是有關於一種 體積較小且元件配置密度較高的電子裝置。 【先前技術】 為了因應電子產品輕薄短小、高頻化、模組化與多功 _ 能的趨勢，電子元組件相對地被要求整合性與積集度 (integration)提高。因此，新世代高頻寬頻材料與元件技 術將是未來技術關鍵。透過新構裝（package)材料的突破、 新製程的開發及設計技術的整合，現今已達成系統化模組 構裝（system in package，SIP)的層次。此外，進一步開 發高頻晶片元件、整合型被動元件（integrated passive device ’ IPD )、微機電系統（micro-eieetro-mechanicai system，MEMS)及奈米材料技術，以建立整合型模組技 術並提昇高頻寬頻產品效能將是位來值得努力的方向。 * 請參考圖1，其繪示習知之一種電子裝置的立體示意 圖。習知電子裝置100包括一基板（substrate) 110、一基 頻元件（base-band component，BB component) 120、多個 被動元件（passive device ) 130、一射頻元件（radio-frequency component，RF component) 140、一天線（antenna) 150 與一通用串列匯流排槔（universal serial bus port，USB port) 160。基頻元件120、這些被動元件130與射頻元件 140皆是藉由表面黏著技術（surface mounting technology， 200818428〕98 21419twf.doc/n SMT)而配置且電性連接於基板110上。習知電子裝置100 可藉由天線150而與外界其他電子裴置（未繪示）進行無 線通訊（wireless communication )。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device, and more particularly to an electronic device having a small volume and a high component arrangement density. [Prior Art] In response to the trend of thin, high-frequency, modular, and multi-functional electronic products, electronic components are relatively required to be integrated and integrated. Therefore, the new generation of high frequency broadband materials and component technology will be the key to future technology. Through the breakthrough of new package materials, the development of new processes and the integration of design technologies, a system in package (SIP) hierarchy has been achieved. In addition, further development of high-frequency chip components, integrated passive device (IPD), micro-eieetro-mechanicai system (MEMS) and nanomaterial technology to establish integrated module technology and improve high Bandwidth product performance will be a worthwhile direction. * Please refer to FIG. 1, which is a perspective view of a conventional electronic device. The conventional electronic device 100 includes a substrate 110, a base-band component (BB component) 120, a plurality of passive devices 130, and a radio-frequency component (RF component). 140, an antenna 150 and a universal serial bus port (USB port) 160. The baseband component 120, the passive component 130 and the RF component 140 are all configured by surface mount technology (surface mounting technology, 200818428) 98 21419twf.doc/n SMT) and electrically connected to the substrate 110. The conventional electronic device 100 can perform wireless communication with other external electronic devices (not shown) through the antenna 150.

然而’由於藉由表面黏著技術她置於基板11〇上的 基頻元件120、這些被動元件請與射頻元件刚所需的 接合面積（connection area)較大，通用串列匯流排埠15〇 的成本較為昂貴且需@定規格的低電壓來驅動，並且這些 被動元件130必須分別配置於基板11〇上以致於其製程較 為繁瑣，因此習知電子元件卿有其改進之必要。 【發明内容】 置，其體積較小且其 本發明之目的是提供一種電子裝 内部元件配置密度較高。 ^ 為達上述或疋其他目的，本發明提出—種電子裝置，However, due to the surface frequency component 120 placed on the substrate 11 by surface adhesion technology, the passive connection area of the passive components is larger than that required for the RF component, and the universal serial bus bar is 15 〇. The cost is relatively expensive and needs to be driven by a low voltage of a certain specification, and these passive components 130 must be respectively disposed on the substrate 11〇 so that the process thereof is cumbersome, and thus the conventional electronic component has its necessity for improvement. SUMMARY OF THE INVENTION The present invention is small in size and its object is to provide a high density of internal components of an electronic device. ^ For the above or other purposes, the present invention proposes an electronic device,

/、1一基板、一基頻元件與一電子組裝體（elec加nic assem y)。基板具有彼此相對的一第一表面與一第二表 m配置於第一表面且電性連接至基板。電子組 型被動元件與一射頻元件。整合型被動元 敕人创二一:面且電性連接至基板，而射頻元件配置於 整合=被動元件上且連接至整合型被動元件。 1 iff疋其他目的，本發明提出—種電子裝置， =尽I弟i板基頻元件、一射頻模組（RFmodule) 及至少一第一電性連接組件（“ -nW)。其中基頻元件連接至第—基板上，而射頻 200818428_ 21419twf.doc/n 模組經由這些第一電性連接組件而電性連接至第一基板。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 請參考圖2A，其繪示本發明第一實施例之一種電子 裝置的侧視示意圖。第一實施例之電子裝置2⑻包括一基 板210、一基頻元件22〇與一電子組裝體23(^基板 具有彼此相對的一第一表面212與一第二表面214。基頻 元件220配置於第一表面212且電性連接至基板21〇。電 子組裝體230包括一整合型被動元件232與一射頻元件 234。整合型被動元件232配置於第二表面214且電性連接 至基板210，而射頻元件234配置於整合型被動元件232 上且電性連接至整合型被動元件232。此外，電子裝置2㈨ 更包括-天線24G ’其電性連接至基板21()或整合型被動 元件232。 在此必須說明的是，基板210與基頻元件22〇構成 (compose) —基頻模組，而由整合型被動元件與射 頻元件234所構成的電子組裝體230可視為一射頻模組。 所明整合巧被動元件232是由數個被動元件⑷會示）整 合成-個單獨功能的電子元件。電子震置細的基本運作 ^式為’當天線24G接收高頻訊號時，高頻訊號的某一頻 π訊號（band signal)、經由整合型被動元件加的娜與 7 200818428)9δ 21419twf.doc/n 阻抗匹配（matching)後而傳輸給射頻元件234的低雜訊 放大器（low noise amplifier，LNA)(未繪示），之後再 將此頻帶訊號傳輸給基頻元件220作進一步的訊號處理。 反之，基頻元件220亦可將訊號傳輸給射頻元件234的功 率放大器（power amplifier，PA)(未繪示），之後所傳 輸的訊號經由整合型被動元件232的阻抗匹配與過滤 (filter)後而經由天線240傳輸出去。 • 在第一實施例中，天線240可為晶片天線（ chip antenna)，其可配置於整合型被動元件232上，但亦可配 置於基板210上。必須說明的是，天線240亦可為f型線 路天線（F-shaped circuit antenna)，其可由基板21〇或整 合型被動元件232的某一線路層（Wiring layer)(未繪示） 的F型線路圖案（wiring pattern)所構成。不論天線24〇 為晶片天線或F型線路天線，其即為一種内建式（built_in) 天線。 瞻在第一實施例中，電子裝置200更包括一天線連接器 (antenna Connect〇r ) 252、另一天線 254 與一膠體 (encapsulant) 260。天線連接器252設置於基板210上， 但亦可設置於整合型被動元件232上。天線254為外接式 天線，其可拆卸式地插入且固定於天線連接器252内並且 電性連接天線連接器252。天線254與天線連接器252構 成一通訊組件（communicati〇n c〇mp〇nent) 25〇，且膠體 260至少包覆電子組裝體23〇與基板21〇之部分第二表面 214以暴露出天線連接器252。當電子裝置2〇〇之天線連接 200818428幌 21419twf.doc/n 為252被插入外接式（externai)天線254時，上述内建式 天線240的功能可由外接式天線254所取代，以加強電子 裝置200的傳輸與接收訊號的功能。當然，設計者亦可將 兩種天線240、254設計為同時啟動，以達成多工的 (multifunctional)傳輸與接收訊號的需求。 圖2B繪示本發明第一實施例之另一種電子裝置的侧 視示意圖。請參考圖2A與圖2B，在此必須強調的是，設 計者亦可將電子裝置200’設計成不具有天線240與通訊組 件250。因此，電子裝置200,的體積將可更小，且當電子 裝置200’之基板210,電性連接至下一層級的電子裝置（未 繪示）時，電子裝置200,可以下一層級之電子裝置上的其 他天線作為傳輸與接收訊號的媒介。 請參考圖2A，第一實施例之電子裝置200更包括至 少一被動元件（passive device ) 270與一記憶體元件 (memory device) 280。記憶體元件280可配置於基板210 的第一表面212上，被動元件270則可配置於基板210的 弟^一表面上214’且兩者皆電性連接至基板21〇。進言之， 由圖2A的相對位置可知，記憶體元件280和基頻元件220 可配置於基板210的一側上，而被動元件270、電子組裝 體230 (射頻模組）和通訊組件250可配置於基板210的 另一側上。此外，基板210可具有至少一埋入式電子元件 (embedded electronic element) 216，其可為主動元件 (active element)或被動元件（passive eiement)。在此必 須說明的是，若設計者對於被動元件的數量要求增加但卻 9 ^ ^098 21419twf.doc/n 200818428 無法順利將此被動元件整合（integrate)至整合型被動元 件232時，設計者可於基板210上配置上述被動元件27〇， 或者可於基板210内部配置例如為被動元件的埋入式電子 元件216以滿足其設計需求。另外，被動元件27〇亦可配 置於整合型被動元件232上，端視設計者的需求而定，但 疋並未以圖面繪示。 請再參考圖2A，電子裝置200更包括多個電性連接 組件292、多個電性連接組件294、多個電性連接組件2% 兵夕個電性連接組件298。基頻元件220藉由這些電性連 接組件292電性連接至基板21〇，且整合型被動元件232 藉由這些電性連接組件294電性連接至基板21〇。射頻元 件234藉由這些電性連接組件296電性連接 元件说，且基板21〇藉由這些電性連接組件； 接至下-層級的電子裝置（未繪示）。本實施例中，電性 連接組件292可為焊接線（b〇ndingwire)，亦即基頻元件 220與基板210之間是藉由打線接合技術（偷6 technology)而彼此電性連接，且電性連接組件294可為焊 球（solder ball)，其材料可為錫、鉛或錫鉛合金。此外， 包性連接組件2%可為凸塊（bump)，其材料可為錫、錯 或s至亦即射頻元件與整合型被動元件Μ]之 間是藉由覆晶接合技術（flip chip b〇nding techn〇i〇gy)而 彼此電性連接，而電性連接組件观可為焊球。就圖2八 所繪不_對位置而言，射頻元件234位於整合型被動元 件232與基板21〇之間。 200818428 丨098 21419twf.doc/n 必^兒明的是’射頻元件234與整合型被動元件232 ^ Fal II ^ ^ ( surface mounting technology ) 而彼此電性連接’亦即兩者之間是藉祕膏（sGlderp她) (未繪示）+而彼此電性連接。此外，基頻元件22〇亦可藉 由表面黏著技術而電性連接至基板21〇，但是並未以圖面 繪示。 請參考圖3，其繪示本發明第二實施例之一種電子裝 置的侧視示意圖。第二實施例之電子裝置3〇〇與第一實施 例之電子裝置200的主要不同之處在於，電性連接基頻元 件320與基板310的這些電性連接組件392可為凸塊。 請參考圖4與圖5，其分別繪示本發明第三實施例之 種黾子裝置的侧視示意圖與本發明第四實施例之一種電 子裝置的側視示意圖。第三實施例之電子裝置4〇〇盥上述 實施例之電子裝置200、300的主要不同之處在於，電性連 接整合型被動元件432與基板410的這些電性連接组件 494可為凸塊，且外接式天線454與天線連接器452可配 置於整合型被動元件432上，而内建式天線44〇可配置於 基板410上。此外，就圖3所繪示的相對位置而言，整合 型被動元件432是位於射頻元件434與基板41〇之間。另 外，第四貫施例之電子裝置5〇〇與第三實施例之電子裝置 400的主要不同之處是和第二實施例之電子裝置3〇〇與第 一貝靶例之電子裝置200的主要不同之處相似，故於此不 再贅述。 請參考圖6與圖7,其分別繪示本發明第五實施例之 11 200818428)98 21419twf.doc/n 一種電子裝置的侧視示意圖與本發明第六實施例之一種電 子裝置的侧視示意圖。第五實施例之電子裝置6〇〇與上述 實施例之電子裝置400、500的主要不同之處在於，電性= 接射頻元件634與整合型被動元件632的這些電性連接組 件696可為焊接線。此外，第六實施例之電子裝置7〇〇與 第五實施例之電子裝置600的主要不同之處是和第四實施 例之電子裝置500與第三實施例之電子裝置4〇〇的主要不 同之處相似，故於此不再贅述。 應注思的是，在前述的實施例中，整合型被動元件即 將數個主動元件和數個被動元件，整合至一基板上，再利 用被動元件生產技術，製造出具有特定功能之整合元件模 組。除此，整合型被動元件亦可僅有至少一個被動元件， 而無主動元件。整合型被動元件内亦可設置主動或被動元 件以外的元件。進一步，製作整合型被動元件的方式至少 包括低溫陶瓷共燒製程（L〇w Temperature c〇 Fired Cer山amics ’ LTCC)、薄膜技術（Thin Film Techn〇1〇gy)、 内肷式製程（Embedded Passives)等等技術。 綜上所述，本發明之電子裝置至少具有以下優點： 由於本發明之電子裝置的這些元件可藉由表面黏 著技術以外的電性連接技術而彼此接合，所以本發明之電 子裝置的這些元件所需接合的面積較小，因此本發明之電 子裝置的體積較小且元件配置密度可較高。 二、由於本發明之電子裝置可藉由焊球而非通用串列 匯流排料紐連接至下—層級的電子裝置，因此本發明 12 200818428398 21419twf.doc/i 200818428398 21419twf.doc/i 之電^裝置所f的驅動電壓較為彈性且成本較低。 此本:明子裝置採用整合型被動元件，因 "士_、 衣置所鬲組裝的元件數目可較少，且製造 時間較短 此本二置可具有至少兩種天線，因 、％于衣置具有更多的功能選擇性。 限定Si發;月”較佳實施例揭露如上，然其並非用以 r任何賴技術領域巾具有通f知識者，在不 脱離本發明之精神和範_，當n :本發明之保護範圍當視後附之申請專二 【圖式簡單說明】 圖1不習知之—種電子裝置的立體示意圖。 =2A!會示本發明第一實施例之一種電子裝置的側視 不思圍。 繪示本發明第—實施例之另—種電子裝置的侧 祝不思圖。 圖3纟會示本發明第二實施例之—種電子裝置的侧視示 思圖。 立圖情林發明第三實施例之一種電子裝置的侧視示 思、圖。 圖5繪示本發明第四實施例之一種電子裝置的側視示 13 2008 1 8428_8 21419twf.doc/n 圖6繪示本發明第五實施例之一種電子裝置的側視示 意圖。 圖7繪示本發明第六實施例之一種電子裝置的侧視示 意圖。 【主要元件符號說明】 100、200、200,、300、400、500、600、700 ··電子裝 置 110、210、210,、310、410 :基板 120、220、320 :基頻元件 130、270 :被動元件 140、234、434、634 ··射頻元件 150、240、254、440、454 :天線 160 :通用串列匯流排埠 212、214 ··表面 216 :埋入式電子元件 • 230 :電子組裝體 232、432、632 :整合型被動元件 250 :通訊組件 252、452 :天線連接器 260 :膠體 280 :記憶體元件 292、294、296、298、392、494、696 :電性連接組 件 14/, 1 substrate, a baseband component and an electronic assembly (elec plus nic assem y). The substrate has a first surface opposite to each other and a second surface m disposed on the first surface and electrically connected to the substrate. An electronic component passive component and a radio frequency component. The integrated passive element creates a two-sided surface that is electrically connected to the substrate, while the RF component is placed on the integrated = passive component and connected to the integrated passive component. 1 iff 疋 other purposes, the present invention proposes an electronic device, = I brother i board baseband component, a radio frequency module (RFmodule) and at least a first electrical connection component ("-nW". Connected to the first substrate, and the RF 200818428_21419twf.doc/n module is electrically connected to the first substrate via the first electrical connection components. The above and other objects, features and advantages of the present invention are more apparent. The following is a detailed description of the preferred embodiment and the following description of the accompanying drawings. [Embodiment] Referring to FIG. 2A, a side view of an electronic device according to a first embodiment of the present invention is shown. The electronic device 2 (8) of the first embodiment includes a substrate 210, a baseband component 22 and an electronic assembly 23 (the substrate has a first surface 212 and a second surface 214 opposite to each other. The baseband component 220 is disposed on The first surface 212 is electrically connected to the substrate 21. The electronic assembly 230 includes an integrated passive component 232 and a radio frequency component 234. The integrated passive component 232 is disposed on the second surface 214 and electrically connected to the substrate 210. Shoot The component 234 is disposed on the integrated passive component 232 and electrically connected to the integrated passive component 232. In addition, the electronic device 2 (9) further includes an antenna 24G' electrically connected to the substrate 21 () or the integrated passive component 232. It should be noted that the substrate 210 and the baseband component 22 are composing a baseband module, and the electronic assembly 230 composed of the integrated passive component and the RF component 234 can be regarded as a radio frequency module. The passive component 232 is an electronic component that is integrated into a single function by a plurality of passive components (4). The basic operation of the electronic shock is [When the antenna 24G receives the high frequency signal, a certain high frequency signal A low noise amplifier (LNA) that is transmitted to the RF component 234 after the band signal is added to the RF component 234 by the integrated passive component plus N and 7 200818428) 9δ 21419twf.doc/n impedance matching. (not shown), then the frequency band signal is transmitted to the baseband component 220 for further signal processing. Conversely, the baseband component 220 can also transmit the signal to the power amplifier of the RF component 234 (power) Amplifier, PA) (not shown), after which the transmitted signal is transmitted through the antenna 240 via impedance matching and filtering of the integrated passive component 232. • In the first embodiment, the antenna 240 may be a wafer. The chip antenna can be disposed on the integrated passive component 232, but can also be disposed on the substrate 210. It should be noted that the antenna 240 can also be an F-shaped circuit antenna, which can be The substrate 21 is formed of an F-type wiring pattern of a Wiring layer (not shown) of the integrated passive component 232. Regardless of whether the antenna 24 is a wafer antenna or an F-type line antenna, it is a built-in antenna. In the first embodiment, the electronic device 200 further includes an antenna connector (252), another antenna 254, and an encapsulant 260. The antenna connector 252 is disposed on the substrate 210, but may be disposed on the integrated passive component 232. The antenna 254 is an external antenna that is detachably inserted and fixed in the antenna connector 252 and electrically connected to the antenna connector 252. The antenna 254 and the antenna connector 252 form a communication component (communicati 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 260 252. When the antenna connection 200818428幌21419twf.doc/n of the electronic device 2 is inserted into the external antenna 254, the function of the built-in antenna 240 can be replaced by the external antenna 254 to strengthen the electronic device 200. The function of transmitting and receiving signals. Of course, the designer can also design both antennas 240, 254 to be activated simultaneously to achieve the need for multi-functional transmission and reception of signals. 2B is a schematic side view of another electronic device according to the first embodiment of the present invention. Referring to Figures 2A and 2B, it must be emphasized that the designer can also design the electronic device 200' to have no antenna 240 and communication component 250. Therefore, the volume of the electronic device 200 can be smaller, and when the substrate 210 of the electronic device 200' is electrically connected to the electronic device (not shown) of the next level, the electronic device 200 can be the next level of electronic The other antennas on the device act as a medium for transmitting and receiving signals. Referring to FIG. 2A, the electronic device 200 of the first embodiment further includes at least one passive device 270 and a memory device 280. The memory component 280 can be disposed on the first surface 212 of the substrate 210, and the passive component 270 can be disposed on the surface 214' of the substrate 210 and both are electrically connected to the substrate 21A. In other words, from the relative position of FIG. 2A, the memory component 280 and the baseband component 220 can be disposed on one side of the substrate 210, and the passive component 270, the electronic assembly 230 (radio frequency module), and the communication component 250 can be configured. On the other side of the substrate 210. Additionally, substrate 210 can have at least one embedded electronic element 216, which can be an active element or a passive eiment. It must be noted here that if the designer increases the number of passive components but 9 ^ ^098 21419twf.doc/n 200818428 can not smoothly integrate this passive component into the integrated passive component 232, the designer can The passive component 27A is disposed on the substrate 210, or the embedded electronic component 216, such as a passive component, can be disposed inside the substrate 210 to meet its design requirements. In addition, the passive component 27 can also be placed on the integrated passive component 232 depending on the designer's needs, but is not shown in the drawings. Referring to FIG. 2A again, the electronic device 200 further includes a plurality of electrical connection components 292, a plurality of electrical connection components 294, and a plurality of electrical connection components 2% electrical connection components 298. The baseband component 220 is electrically connected to the substrate 21 by these electrical connection components 292, and the integrated passive component 232 is electrically connected to the substrate 21 by these electrical connection components 294. The RF component 234 is electrically connected to the component by the electrical connection component 296, and the substrate 21 is connected to the lower-level electronic device (not shown) by the electrical connection component. In this embodiment, the electrical connection component 292 can be a bonding wire, that is, the groundband component 220 and the substrate 210 are electrically connected to each other by wire bonding technology (stealing 6 technology), and the electricity is electrically connected. The sexual connection component 294 can be a solder ball, the material of which can be tin, lead or tin-lead alloy. In addition, the package connection component 2% can be a bump, the material of which can be tin, wrong or s to, that is, the RF component and the integrated passive component Μ] is by flip chip bonding technology (flip chip b) 〇nding techn〇i〇gy) is electrically connected to each other, and the electrical connection component can be a solder ball. The RF component 234 is located between the integrated passive component 232 and the substrate 21A as depicted in Figure 2-8. 200818428 丨098 21419twf.doc/n It must be 'RF component 234 and integrated passive component 232 ^ Fal II ^ ^ ( surface mounting technology ) and electrically connected to each other 'that is, between the two is a secret paste (sGlderp her) (not shown) + and electrically connected to each other. In addition, the baseband component 22 can also be electrically connected to the substrate 21 by surface adhesion techniques, but is not shown in the drawings. Please refer to FIG. 3, which is a side elevational view of an electronic device according to a second embodiment of the present invention. The main difference between the electronic device 3 of the second embodiment and the electronic device 200 of the first embodiment is that the electrical connection components 392 electrically connected to the baseband element 320 and the substrate 310 can be bumps. Referring to FIG. 4 and FIG. 5, respectively, a side view of a tweezers device according to a third embodiment of the present invention and a side view of an electronic device according to a fourth embodiment of the present invention are shown. The electronic device 4 of the third embodiment is different from the electronic device 200, 300 of the above embodiment in that the electrical connection components 494 electrically connecting the integrated passive component 432 and the substrate 410 can be bumps. The external antenna 454 and the antenna connector 452 can be disposed on the integrated passive component 432, and the built-in antenna 44 can be disposed on the substrate 410. Moreover, with respect to the relative position depicted in Figure 3, the integrated passive component 432 is located between the RF component 434 and the substrate 41A. In addition, the main difference between the electronic device 5 of the fourth embodiment and the electronic device 400 of the third embodiment is the electronic device 3 of the second embodiment and the electronic device 200 of the first target embodiment. The main differences are similar, so I won't go into details here. Please refer to FIG. 6 and FIG. 7 , which are respectively a side view of an electronic device according to a fifth embodiment of the present invention, and a side view of an electronic device according to a sixth embodiment of the present invention. . The main difference between the electronic device 6 of the fifth embodiment and the electronic device 400, 500 of the above embodiment is that the electrical connection components 696 of the radio frequency component 634 and the integrated passive component 632 can be soldered. line. In addition, the main difference between the electronic device 7 of the sixth embodiment and the electronic device 600 of the fifth embodiment is that the electronic device 500 of the fourth embodiment is different from the electronic device 4 of the third embodiment. The same is true, so I will not repeat them here. It should be noted that in the foregoing embodiments, the integrated passive component integrates several active components and several passive components onto one substrate, and then uses passive component production technology to manufacture an integrated component module with specific functions. group. In addition, the integrated passive component may have only at least one passive component and no active component. Components other than active or passive components can also be placed in the integrated passive component. Further, the method for fabricating the integrated passive component includes at least a low temperature ceramic co-firing process (L〇w Temperature c〇Fired Cer mountain amics 'LTCC), a thin film technology (Thin Film Techn〇1〇gy), and an internal passivation process (Embedded Passives). ) and so on. In summary, the electronic device of the present invention has at least the following advantages: Since the components of the electronic device of the present invention can be bonded to each other by electrical connection techniques other than surface bonding techniques, these components of the electronic device of the present invention The area to be joined is small, so the electronic device of the present invention is small in size and the component arrangement density can be high. 2. Since the electronic device of the present invention can be connected to the lower-level electronic device by solder balls instead of the universal serial bus bar, the present invention is 12 12 18 18 428 398 21419 twf.doc/i 200818428398 21419 tw. The driving voltage of the device f is relatively flexible and low in cost. This book: Mingzi device adopts integrated passive components, because the number of components assembled by "士_, clothing store can be less, and the manufacturing time is shorter. The second set can have at least two kinds of antennas, because, Set to have more functional selectivity. The preferred embodiment of the present invention is disclosed above, but it is not intended to be used in any technical field, without departing from the spirit and scope of the invention, when n: the scope of protection of the present invention 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The side view of another electronic device according to the first embodiment of the present invention is not shown. Fig. 3A shows a side view of an electronic device according to a second embodiment of the present invention. FIG. 5 is a side view of an electronic device according to a fourth embodiment of the present invention. FIG. 5 is a side view of an electronic device according to a fourth embodiment of the present invention. 2008 1 8428_8 21419 twf.doc/n FIG. 6 illustrates a fifth embodiment of the present invention. Figure 7 is a side elevational view of an electronic device according to a sixth embodiment of the present invention. [Description of main components] 100, 200, 200, 300, 400, 500, 600, 700 · Electronic device 110, 210, 210, 310, 410: substrate 1 20, 220, 320: baseband components 130, 270: passive components 140, 234, 434, 634 · RF components 150, 240, 254, 440, 454: antenna 160: universal serial busbars 212, 214 · · Surface 216: Buried electronic component • 230: Electronic assembly 232, 432, 632: Integrated passive component 250: Communication component 252, 452: Antenna connector 260: Colloid 280: Memory component 292, 294, 296, 298 , 392, 494, 696: electrical connection component 14

Claims (1)

*098 21419twf.doc/n 200818428 申請專利範圍： 1·一種電子裝置，包括： 一基板’具有彼此相對的—第—表面與—第二表面； 板 一基頻元件’配置於該第—表面且電性連接至該基 以及 一電子組裝體，包括： 整合型被動元件，配置於該第二表面且電性連 接至該基板；以及 射頻元件，配置於該整合型被動元件上，且電 性連接至該整合型被動元件。 糾2.如申請專利範圍第i項所述之電子裝置，更包括多 個第電性連接組件，該基頻元件藉由該些第—電性連接 組件電性連接至該基板。 ^ 3·如申請專利範圍第2項所述之電子裝置，其中該些 第一電性連接組件為焊接線。 一 ^ 4.如申請專利範圍第2項所述之電子裝置，其中該些 弟一電性連接組件為凸塊。 # 5·如申請專利範圍第2項所述之電子裝置，其中該些 弟一電性連接組件為錫膏。 、 一 6·如申請專利範圍第1項所述之電子裝置， 電性連接_，錄合碰動元件藉㈣些第二電 生連接組件電性連接至該基板。 ^ 一 7·如申請專利範圍第6項所述之電子襞置，豆中該4b 弟二電性連接組件為凸塊。 /、 ^ 15 200818428 098 2l419twf.d〇c/n 8.如申凊專利範圍第6項所 弟二電性連接組件為焊球。 β衣置，射該些 個第圍第1項所述之電子裝置，更包括多 組件電性二:合=:藉 第三 第 第 她㈣置，其中該些 二申:專：圍膏第。9項所述之電子裝置’其中該些 少-1=^概，項所狀電子裝置，更包括至 14 A * ’，、配置於該基板上，且·連接至該基板。 板呈右請專利範圍第1項所述之電子裝置，其中該基 扳具有至少一埋入式電子元件。 15·如申請專利範圍第14項所述之電子裝置，豆 埋入式電子元件為絲元件或被動元件。 ^ 16·—種電子裝置，包括·· 一第一基板； 一基頻元件，電性連接至該第一基板上； 一射頻模組；以及 楚i少r第一電性連接組件，其中該射頻模組經由該些 弟一包性連接組件而電性連接至該第一基板。 如申請專利範圍第16項所述之電子裴置，其更包 16 )〇98 21 顿wfd〇c/n 200818428 括·二記憶體元件，電性連接至該第-基板上。 印㈣^1申5月專利乾圍第17項所述之電子裝置，其中該 ,二*和該射頻模組設置於該第-基板的不同側。 明專利範圍第16項所述之電子裝置，其更包 括·一被動元件，電性連接至該第—基板上。 被動元3=概圍第19項所述之電子裝置，其中該 被動=和該基頻元件設置於該第—基板的不同側。 第一其板專I利範圍第16項所述之電子裝置，其中該 弟基板具❹少m式電子元件。 埋入^^^範㈣21項所述之電子裝置，其中該 心子70件為主動元件或被動元件。 射頻==專侧第丨6項所述之電子裝置，其中該 一射頻元件； 一整合型被動元件；以及 第-性連接組件’其中該射頻元件經由祕 Hi件叫时接至該整合麵動元件。一 射頻=二二該整合型被動元件賴之ϊ 整合型被動之電子裝置，其中該 —專利===之二 第二電性連接組件是凸塊或焊球。、之-子衣置，其中該 π如申請專·圍第23項所述之電子裝置，其申該 17 ►098 21419twf.doc/n 200818428 第二電性連接組件是焊接線。 2&如申請專利範圍第23項所述之電子裝置，該 些第—電性連接組件設置於該整合型被動元 括彳範㈣16項所叙好U，其更包 第三電性連接組件元件經由該些 第三其中該 請專利範圍第16項所述之電子農置， 件二=====‘ 之㈣置，其中該 第—電性連接所叙電子裝置，其中該 18*098 21419twf.doc/n 200818428 Patent Application Range: 1. An electronic device comprising: a substrate 'having a first surface-to-surface and a second surface; a plate-based frequency component' disposed on the first surface and Electrically connected to the base and an electronic assembly, comprising: an integrated passive component disposed on the second surface and electrically connected to the substrate; and a radio frequency component disposed on the integrated passive component and electrically connected To the integrated passive component. The electronic device of claim i, further comprising a plurality of electrical connection components, the baseband component being electrically connected to the substrate by the first electrical connection components. The electronic device of claim 2, wherein the first electrical connection components are solder wires. The electronic device of claim 2, wherein the electrical connection components are bumps. #5. The electronic device of claim 2, wherein the electrical connection components are solder paste. 6. The electronic device of claim 1, wherein the electronic component is electrically connected to the substrate by a second electrical connection component. ^1. The electronic device according to claim 6, wherein the 4b brother and the second electrical connection component are bumps. /, ^ 15 200818428 098 2l419twf.d〇c/n 8. The second electrical connection component of the sixth paragraph of the application patent is a solder ball.衣 clothes, shoot the electronic devices described in the first item of the first paragraph, and more include multi-component electrical two: combined =: by the third first (four), which two of the two: special: . The electronic device of the above-mentioned item 9 includes a plurality of -1, and the electronic device of the item, further including 14 A*', is disposed on the substrate, and is connected to the substrate. The board is the electronic device of claim 1, wherein the base has at least one embedded electronic component. 15. The electronic device of claim 14, wherein the embedded electronic component is a silk component or a passive component. An electronic device comprising: a first substrate; a baseband component electrically connected to the first substrate; an RF module; and a first electrical connection component, wherein the The RF module is electrically connected to the first substrate via the splicing connection components. For example, the electronic device described in claim 16 further includes 16) 21 98 21 watts wfd 〇 c / n 200818 428 two memory elements electrically connected to the first substrate. The electronic device according to Item 17 of the Japanese Patent Application No. 17, wherein the second and the RF module are disposed on different sides of the first substrate. The electronic device of claim 16 further comprising: a passive component electrically connected to the first substrate. Passive element 3: The electronic device of claim 19, wherein the passive = and the baseband component are disposed on different sides of the first substrate. The electronic device of the first aspect of the invention, wherein the substrate has a reduced number of m-type electronic components. Embedded in the electronic device described in paragraph (4), wherein the core 70 is an active component or a passive component. Radio frequency == the electronic device of the above-mentioned item 6, wherein the one RF component; an integrated passive component; and the first-degree connection component, wherein the RF component is connected to the integrated surface via a secret device element. A radio frequency = 22 the integrated passive component depends on the integrated passive electronic device, wherein the patent === bis The second electrical connection component is a bump or a solder ball. And the sub-clothing, wherein the π is as claimed in the electronic device described in Item 23, which is applied to the 17:098 21419twf.doc/n 200818428 second electrical connection component is a welding wire. 2 & The electronic device according to claim 23, wherein the first electrical connection component is disposed in the integrated passive element (4), and the third electrical connection component And the electronic device according to the third aspect of the invention, wherein the electronic device is connected to the electronic device, wherein the electronic device is connected to the electronic device.
TW95137079A 2006-10-05 2006-10-05 Electronic apparatus TWI389274B (en)

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