TW200818103A - Analogue buffer, compensating operation method thereof, and display therewith - Google Patents

Analogue buffer, compensating operation method thereof, and display therewith Download PDF

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Publication number
TW200818103A
TW200818103A TW96124495A TW96124495A TW200818103A TW 200818103 A TW200818103 A TW 200818103A TW 96124495 A TW96124495 A TW 96124495A TW 96124495 A TW96124495 A TW 96124495A TW 200818103 A TW200818103 A TW 200818103A
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Taiwan
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source
terminal
voltage
transistor
switch
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TW96124495A
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Chinese (zh)
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TWI371023B (en
Inventor
Cheng-Ho Yu
Fu-Yuan Hsueh
Wei-Cheng Lin
Keiichi Sano
Ya-Hsiang Tai
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Tpo Displays Corp
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Priority claimed from US11/546,161 external-priority patent/US7742044B2/en
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Publication of TWI371023B publication Critical patent/TWI371023B/en

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  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
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Abstract

A source-follower-type analogue buffer with an active load, a new compensating operation and a display with the source-follower-type analogue buffers are developed to reduce an error voltage which is the difference between an input voltage and an output voltage of the analogue buffer. The source-follower type analogue buffer can also minimize the variation from both the charging time and the device characteristics and maximize the range of the input voltage.

Description

200818103 P2005138 16232-op-twf.doc/n 九、發明說明: 【發明所屬之技術領域】 本發明關於一種類比緩衝器。更具體地說,本發明關 於一種主動矩陣顯示器使用多矽薄膜電晶體(TFT)的源 極跟隨型類比緩衝器。 • 【先前技術】 • 低溫多晶石夕(LTPS,low temperature poly-Si)薄膜電 晶體(TFT,thin film transistor )允許歸因於高電流驅動能 《 力的驅動電路與主動矩陣顯示器的晝素面板的週邊整合。 然而,眾所周知,由於多晶矽薄膜電晶體與單晶矽大尺寸 積體電路(LSI,large scale integrated circuit)相比具有相 當差的特性和非均一性,整個驅動電路與多晶矽薄膜電晶 體(TFT)整合是非常困難的。多晶石夕在使用多晶石夕薄膜 電晶體(TFT)的多個驅動電路中,類比緩衝器對於驅動 面,中資料匯流排的負載電容是不可缺少的。由於源極隨 耦态的簡單性和低功率消耗,其被視為用於“面板上系統,, 〇 (s〇p,SystemonPanel)應用之類比緩衝器電路的極佳候 選者。 圖1A中緣示主動矩陣顯示器使用LTpS薄膜電晶體的 • 典型源極隨耦器100。源極隨耦器100中的薄膜電晶體110 的閘極耦合到輸入電壓Vin,且薄膜電晶體110的漏極耦 ^到操作電壓Vdd。薄膜電晶體110的源極經由負載電容 时jfload)輕合到接地。圖1B繪示源極隨輕器1⑻的輸 出電壓Vcmt的波形。可觀測到,最終輸出電壓v〇ut並不 5 200818103 P2005138 16232-op-twf.doc/n 保持恒定,而是會超過原則上所預期的vin_vth的值,其 中Vth是TFT 110的臨界值電壓。其歸因於次臨界值電流。 如圖ic所示’其繪示漏極電流(Id)和薄膜電晶體11〇 的閘極與源極之間的電壓(Vgs)曲線,LTps薄膜電晶體 的次臨界健_為G.3V/dee,這比金屬氧化物半導體場 效電晶體(MOSFET,metal-oxide_semic〇nduct〇r field 范⑽ c (j transistor)的次臨界值擺幅(〇〇6v/dec)大得多。因而, 典型源極隨翻1(H)作為主動矩陣顯示器_比緩衝器, 將對於各種產品規格(例如主動轉顯示器義框率)的 充電時間較為敏感’且不能具有恒定輸出電壓。 圖2A緣示習知液晶顯示器中使用多晶石夕薄膜電晶體 的另-源極隨減。源極包 和碰、電容器α和多個„_84。體= 合到輸入電壓Vin的節點N1 i ^ 輕 即N1在開關S2的控制下連接到節 點N2,且逛連接到薄膜電晶體組 關S3的控制下連接到節 m2在開 筋點ϋ 且進一步連接到節點N4。 的閉極端子。」包合益C1的一個端子和薄膜電晶體M2 ^ Ψ 卽點Ν4在開關S4的控制下連接到資料繞 節點Ν4 #電壓電位是 ^賴貝科線。 薄膜電晶魏的:200的輸出電壓_。 漏極連接到節點⑽(輪出姓早曰曰體奶的 電晶體,且m2“子)。箱電晶體Μ2是pM〇s 點N4。u極連接到操作碰Vdd且為極連接到節 之 麥看圖2β,其緣示輸入電麗Vin與輪出電虔ν_ 6 200818103 P2005138 16232-op-twf.doc/n 間的關係,如芩考元件符號210所示。在源極隨耦器的理 想情況下,輸出電壓Vout應與輸入電壓Vin相同。然而, 在實際情況中存在誤差電壓,即輸入電壓Vin與輸出電壓 Vout之間的差值。如參考元件符號22〇所示,其繪示當輸 入電壓Vin增加時,輸出電壓v〇ut與輸入電壓wn不相 同,且如果輸入Vin從2·5ν變化到8V,那麼誤差電壓在 =iV到175 mV之間浮動。如果源極隨麵器的輸出電壓 對於顯示器的驅動而言較大(例如1〇 V) 對驅動操作造成嚴重影響。然而, ^對於顯示器電壓的驅動而言較小(例如w =)’職誤差電壓可献於—做階電壓,而 I將對顯示品質造成嚴重影響。 【發明内容】 隨耦:型類目:在提供-種具有有效負载的源極 化,並使輸入電壓』X:設備特徵兩者的變化最小 以用於驅動顯示器中;:資:器型,緩衝器 比緩衝器包含儲存電叙=、、载電容。所述類 電容p的第一:驅動電晶體和有效負載。儲在 電容哭的μ ΐ !由弟—開關連接到操作電I源,儲广 7 200818103 P2005138 ΐ6232-〇ρ^ά〇ε/η 器的第一 ::’._電晶體的漏極端 pa «a ^ ^兒芏"、且驅動電晶體的源極端子經由第二 連接到驅電谷益的第二端子。有效負載的第一端子 隨麵哭型畔:晶體ϋ源極端子且經由第四開關連接到源極 連接i接=,ί衝器的輪出端子,且有效負载的第二端子 比緩衝哭祕有^負载由偏壓控制’其中源極隨輕器型類 比緩衝ϊ的二=經由第五開關連接到源極隨輕器型類 電壓降儲存開關和第二開關被接通,因而 _移位到中第且=入侧 且第三開關和第四拉弟一開關和弟二開關被斷開, 施加輪入電壓和伴二驅動電晶體的閘極端子被 輪哭持在儲存電容器中的電壓差,因而類土 在本發明的一個實施例中, Ο 償操作方法。類比緩衝器包含驅動:曰緩衝器的補 儲存電容器和第—開關安¥/=心曰體和負载電容器。 :’負载電容器安置在開關和源電虔 間。源極隨轉器型類比緩衝 、接‘核接地之 j到源極隨耦器型類比緩衝;的‘端子=第,開關連 方法包含在補償週期期 斤述補償操作 被轉合到操作電麵 4被接通讀存電容器 t。在資料於入拥/、 免壓降被儲存在儲存 爾入週期期間,在資料輸入週期的 8200818103 P2005138 16232-op-twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to an analog buffer. More specifically, the present invention relates to a source follower analog buffer using a multi-turn thin film transistor (TFT) for an active matrix display. • [Prior Art] • LTPS (low temperature poly-Si) thin film transistor (TFT, thin film transistor) allows the high-current drive energy to drive the circuit and the active matrix display. The perimeter of the panel is integrated. However, it is well known that since the polycrystalline germanium thin film transistor has relatively poor characteristics and non-uniformity compared to a single scale large scale integrated circuit (LSI), the entire driving circuit is integrated with a polycrystalline germanium thin film transistor (TFT). is very difficult. In the multiple drive circuits of polycrystalline magnets (TFTs), the analog buffer is indispensable for the load capacitance of the data bus in the drive surface. Due to the simplicity of the source-dependent coupling state and low power consumption, it is considered an excellent candidate for analog-like buffer circuits for "on-panel systems, 〇(s〇p, SystemonPanel) applications. Figure 1A The active matrix display uses a typical source follower 100 of the LTpS thin film transistor. The gate of the thin film transistor 110 in the source follower 100 is coupled to the input voltage Vin, and the drain of the thin film transistor 110 is coupled. To the operating voltage Vdd, the source of the thin film transistor 110 is lightly coupled to ground via the load capacitance jfload). Figure 1B shows the waveform of the output voltage Vcmt of the source with the lighter 1 (8). Observable, the final output voltage v〇ut Not 5 200818103 P2005138 16232-op-twf.doc/n remains constant, but will exceed the value of vin_vth expected in principle, where Vth is the threshold voltage of TFT 110. It is attributed to the sub-threshold current. Figure ic shows 'the drain current (Id) and the voltage (Vgs) curve between the gate and the source of the thin film transistor 11 ,, the subcritical _ of the LTps thin film transistor is G.3V/dee This is more than a metal oxide semiconductor field effect transistor (MOSFET, met The sub-threshold swing of the al-oxide_semic〇nduct〇r field (10) c (j transistor) is much larger (〇〇6v/dec). Thus, the typical source is turned over with 1(H) as the active matrix display. , will be sensitive to the charging time of various product specifications (such as active turn-to-display frame rate) 'and can not have a constant output voltage. Figure 2A shows the other source of the use of polycrystalline silicon thin film transistor in the conventional liquid crystal display The pole is reduced. The source package and the bump, the capacitor α and the plurality of „_84. body= the node N1 i ^ which is connected to the input voltage Vin is light, that is, N1 is connected to the node N2 under the control of the switch S2, and is connected to the thin film electricity. Under the control of the crystal group off S3, it is connected to the closed end of the node m2 at the opening point 进一步 and further connected to the node N4." One terminal of the package and the thin film transistor M2 ^ Ψ 卽 point Ν 4 at the switch S4 Controlled to connect to the data around the node Ν4 # voltage potential is ^ Lai Beike line. Thin film electro-crystal Wei: 200 output voltage _. The drain is connected to the node (10) (rounded the last surname milk crystal, and M2 "sub". Box transistor Μ 2 is pM 〇s point N4. u pole connection The operation touches Vdd and is connected to the section of the section. See Figure 2β for the relationship between the input and the output of the battery 虔ν_ 6 200818103 P2005138 16232-op-twf.doc/n, such as the reference symbol 210. As shown in the ideal case of the source follower, the output voltage Vout should be the same as the input voltage Vin. However, in the actual case, there is an error voltage, that is, a difference between the input voltage Vin and the output voltage Vout. As shown by the reference component symbol 22A, it is shown that when the input voltage Vin increases, the output voltage v〇ut is not the same as the input voltage wn, and if the input Vin changes from 2·5ν to 8V, the error voltage is at =iV to Floating between 175 mV. If the output voltage of the source follower is large for the drive of the display (eg 1 〇 V), the drive operation is severely affected. However, ^ is small for the drive of the display voltage (for example, w =). The job error voltage can be applied to the step voltage, and I will have a serious impact on the display quality. SUMMARY OF THE INVENTION: Coupling: Type: providing source polarization with a payload and minimizing changes in input voltage "X: device characteristics" for driving a display; The buffer ratio buffer includes a storage capacitor, and a load capacitor. The first of the capacitances p: drive the transistor and the payload. Stored in the capacitor crying μ ΐ! By the brother-switch connected to the operating power I source, Chu Guang 7 200818103 P2005138 ΐ6232-〇ρ^ά〇ε/η The first of the device:: '. a ^ ^儿芏", and the source terminal of the driving transistor is connected to the second terminal of the drive valley via the second. The first terminal of the payload is on the face of the crying type: the crystal source terminal is connected to the source connection via the fourth switch, the wheel terminal of the buffer, and the second terminal of the payload is crying than the buffer There is a load controlled by the bias voltage, where the source is connected to the source of the lighter type analog buffer = = via the fifth switch to the source with the light type voltage drop storage switch and the second switch is turned on, thus _ shift To the middle and = input side and the third switch and the fourth pull-up switch and the second switch are disconnected, applying the wheel-in voltage and the voltage of the gate terminal of the second drive transistor being held in the storage capacitor by the wheel Poor, and thus soil, in one embodiment of the invention, compensates for the method of operation. The analog buffer contains the driver: the 储存 buffer's complement storage capacitor and the first-to-switch ampere-free and load-capacitor. : 'The load capacitor is placed between the switch and the source. The source is versatile with the converter type buffer, and the 'core to ground' to the source follower type analog buffer; the 'terminal = the first, the switch connection method is included in the compensation period, the compensation operation is transferred to the operating surface 4 is turned on to read the capacitor t. In the data entry cycle, the voltage-free drop is stored during the storage entry cycle, during the data entry cycle 8

ϋ 200818103 P2005138 16232>op.twf.d〇c/n 輸入電壓被施加到儲存雷& 因而驅動電晶體的閘極d弟二開關之間的接點處, 电谷„„中的电壓差’且類比緩衝 :,存 存電容器中的電壓補償,且 ^I '由儲存在儲 第二開關被接通且源極隨耦器型類^衝=二二週期, 連接到源極隨編_比緩魅的輸;端子被 【實施方式】口所附圖式’作詳細說明如下。 衛哭本Πί:種具有有效負載的源極隨耦器型類比緩 衝^,及-種新翻償操作方法經發展以降低類比緩衝哭 的輸入電壓與輸出電壓之間誤差電壓的差值。源極隨^ 型類比緩衝H射使充電_和設備特㈣者的變化最^ 化,並使輸入電壓範圍最大化。 在2006年2月16日申請名稱為ϋ 200818103 P2005138 16232>op.twf.d〇c/n The input voltage is applied to the junction between the gate of the storage diode and thus the gate of the transistor, the voltage difference in the valley 'And analog buffer: the voltage compensation in the storage capacitor, and ^I ' is stored in the second switch is turned on and the source follower type is ^ 2 = two cycles, connected to the source with _ The transmission is slower than the enchantment; the terminal is described in detail in the [Embodiment] port description. Wei Cry Ben ί: A source-slave type analog buffer with a payload, and a new reconciliation operation method developed to reduce the difference between the error voltage between the input voltage and the output voltage of the analog buffer. The source is matched with the analog buffer H to maximize the variation of the charge_ and device (4) and maximize the input voltage range. On February 16, 2006, the application name was

“SOURCE-FOLLOWER TYPE ANALOGUE BUFFER COMPENSATING OPERATION METHOD THEREOf! AND DISPLAY THEREWITH”的第 11/356,160 號專利申請 案中提出一種源極隨耦器,其中上述專利申請案的全文以 引用的方式併入本文中且成為本說明書的一部分。如圖3A 中所示,加入有效負載320,其為薄膜電晶體。有效負載 320經設計以具有較大通道長度(L)以使得直流(DC) 電流最小化且降低扭結效應(kink effect)。圖3B中緣示 輸出電壓Vout波形。顯然,減少了輸出電壓vout的非飽 9 200818103 P2005138 16232-op-twf.doc/n 和現象。結果,具有有效負载的源極隨輕器、300優先擁有 耐充電時間變化特徵。 然而,如果將圖3A的所提議的源極隨耗器直接應用 到主動矩陣顯示器的類比緩衝器中,那麼對於應用來說要 考慮LTPS薄膜電晶體的變化(例如臨界值電壓或遷移率 接著,請參看圖3C ’其緣示源極隨輕器的類比輸出 形與操作時間’其中對其施加相同輸入電 Ϊ二i ί6V。顯然,典型源極隨耗器受到因LTPS 薄膜龟晶體變化導致的巨大變化。 =看圖4A,本文介紹—種具有有效 :戶== 衝1 400 ’其也在上述專利申請案中提 出所述源極酼耦器型類比緩衝器 、有效負載420、負載電容器 》體 艚,日山2 + 貞戟420是溥膜電晶 o 體且·&子在電壓電位Vbias下恒定偏壓。 接到Vin的節點N1在開關S3的控制下連 N2連接到儲存電容器物的一個端A source follower is proposed in the "SOURCE-FOLLOWER TYPE ANALOGUE BUFFER COMPENSATING OPERATION METHOD THEREOF! AND DISPLAY THEREWITH" patent application No. 11/356,160, the entire disclosure of which is incorporated herein by reference. Become part of this manual. As shown in Figure 3A, a payload 320 is added which is a thin film transistor. The payload 320 is designed to have a larger channel length (L) to minimize direct current (DC) current and reduce the kink effect. The output voltage Vout waveform is shown in Fig. 3B. Obviously, the output voltage vout is reduced by the non-saturated 200818103 P2005138 16232-op-twf.doc/n and phenomenon. As a result, the source with the payload, with the lighter, 300 has the characteristics of resistance to charging time. However, if the proposed source follower of FIG. 3A is directly applied to the analog buffer of the active matrix display, then for the application to consider changes in the LTPS thin film transistor (eg, threshold voltage or mobility, then, Please refer to Figure 3C''''''''''''''''''''''''' Huge change. = See Figure 4A, which is described as having an effective: household == rush 1 400 '. It is also proposed in the above patent application that the source 酼 coupler type analog buffer, payload 420, load capacitor Body 日, 日山 2 + 贞戟420 is the 溥膜电晶o body and ·& is constantly biased at voltage potential Vbias. Node N1 connected to Vin is connected to storage capacitor by N2 under the control of switch S3 One end

連接到炫、控制下進—步連接卿點N5。節點N3 連接到儲存電容器44〇的另 "P,,t51NJ 閘極端子,且在_丨的控體410的 節點⑽輕合到操作電㈣下進步連接到節點N4。 的漏極端子。節點N 、連铜驅動電晶體410 _的源極端子,且在門4 ^負载420和驅動電晶體 每千且在_S4的控制下進―步連接到節點 200818103 P2005138 16232-〇p-twf.doc/n ,節,N6連接到負載電容器43〇。節點N6的· 疋源極^輕器型類比緩衝器400的輸出電屋ν_。电位 在上述專利申請案_提議一種補 ^ =備特徵兩者的變化最小化且使充電 說’在圖4b和圓4c中纷示替代性提議= ίΓί Γ 的類比缓衝11 _來參看圖犯。在ί ( 二:ν:ί負載420的薄膜電晶體的閘剛在電' 壓电位vbias下恒定偏壓。在補償週期T1期間,mf电 和S2在從時間t0到時間u被接通,且” S1 si被斷開。在補償週期T1結尾(即,時間曰二:關 被斷開。因而’電壓降被儲存在館存電容哭姻U S2 在資料輸人職T2期間,輸人電壓v π電位且施加到節點奶,且開關S3和S4 ^軏 電晶體4U)的閘極端子被施加輸人電壓動 儲存電容器440中的電壓差。闲认 私1和保持在 存電容器440中的電壓補償。’雨出電壓由儲存在儲 Ο 如對於另-補償操作提議請連同圖4 ㈣0來參看圖4C。在時間t0處,斤^:員比緩衝 缚膜電晶體的閘極電壓在電壓電 4放負載420的 補償週期T1期間,開關定偏壓。在 接通。在補償週期T1結尾(即時^個_週期T1中被 斷開。因而,電壓降儲存在儲存和如皮 入週_間,輸入電壓二在資料輸 到節點m,且開關S3和S4 且施力口 ⑤動電晶體41〇的 200818103 P2005138 16232-op-twf.doc/n 閘極端子被施加輸入電壓Vi 梢中的電壓差。因此,輸_由料電哭容器 中的電壓補償。 省存電合為440 然而,考慮到誤差電壓(其為類 與輸出電壓之間的差值),本發 ^輸入電壓 參看圖5A,本文介紹—種具有右~種_結構。請 型類比緩衝器500,其為本發明的優選源= 遺耦器 器型類比緩衝請包含驅動電晶體5iG、^m麵 儲存電容器530和多個開關S1到S5。驅動^曰體、 晶體’例如低溫多晶石夕薄膜電晶;負= 疋缚=晶體’且閘極端子在電壓Vbias下偏之 制下_ 接 Ο 二的控制下進一步連接到節謂。節點=連= ^谷為530的另-個端子和驅動電晶體51〇的間極端 子^在開關S1的控制下進—步連接到節點Ν 作電壓Vdd且還連接到驅動電晶體51〇的漏極 源極^點N5連接到有效負載520和驅動電晶體510的 二_ +且在關%的控制下進—步連接到節點N6。 發明中所提議的補償操作方法《降低“ 电L、輸出電壓之間的誤差電壓,且使充電時間和設備特 12 200818103 P2005138 16232-op-twf.doc/n 徵兩者的變化最小化並使得輸入電壓範圍最大化。舉例 說’圖5Β中I會示對於操作原理的本發明實施例。首 伴隨圖5Α所示的類比緩衝器5〇〇來參看圖sB。在時間= 處,作為有效負載520的薄膜電晶體的閘極電壓在電壓· 位Vbms下恒定偏壓。在補償週期T1期間,開關 】 在從時間t〇到時間tl被接通,且在時間tl處,開關w :皮切斷。在補償週期T1結尾(即,時間t2),開關幻被 斷開。因而,電料被儲存在儲存電容器53〇中。 在資料輸入週期T2内從時間t2到時間β㈣ 間,輸入電壓Vin轉換成邏輯高電位且施加到節點m,且 ^^3^4^通°驅動電晶體510的閘極端子被施加 輸入縣vln電壓和保持在儲存電容器53〇中的電壓差。 因此,輸出電壓由儲存在儲存電容器53〇中的電壓 仏。在資料輸入週期T2内從時間t3到時間w的週期 Ο =和s:,且開關S5被接通,以將輪出電壓V⑽ I到輸Μ壓Vin。從時間t3科間t4的週細間中, 將輸出f壓Vout#合顺人電壓Vi =之編緩~== 隨』===::變 源極隨耦器型類比緩衝器500的類比輸 、曰 讀方法可使充電_和設備特徵兩者的變 13 200818103 P2005138 16232-op-twf.doc/n 化最小化,並使得輸人電壓_最大化。所提 耦器型類比緩衝器500的充電時間低於15叩秒= 習知源極隨撼㈣錢邮大於本發㈣充電)^ 圖6A中可見,充電時間約為8 。 《 另請參看圖6B,其缘示所提議的源極隨輕 衝器500的輸入電壓Vin與輸出電壓⑽之 入電壓Vin與輸出電壓Vout之間的線性關係得到=輸 ^入電麼Vin與輸出電壓Vout之間的電壓差顯著降低;· 思味者所提議的源極隨補型類比緩衝器和 作方法減小了誤差電壓。請再參相W,赌示所^的 源極隨—型類比緩衝器中的輸入電壓施轉 壓之,的關係。誤差電壓被降低到低於〇 〇5(5 〇〇e:〇2 - 其降低而並非像習知祕隨姆型類比Connect to the dazzle, control the next step - step to connect the point N5. The node N3 is connected to the other "P,, t51NJ gate terminal of the storage capacitor 44A, and is connected to the node N4 at the node (10) of the control body 410 of the _丨 to the operating power (4). Drain terminal. Node N, the source terminal of the copper drive transistor 410_, and the gate 4^ load 420 and the drive transistor per thousand and under the control of _S4 are further connected to the node 200818103 P2005138 16232-〇p-twf. Doc/n, section, N6 is connected to the load capacitor 43〇. The output of the node N6 is analogous to the output of the buffer 400. The potential is minimized in the above-mentioned patent application _ proposes a change in the complement feature and causes the charge to say 'in the figure 4b and the circle 4c, the alternative proposal = ίΓί Γ analog buffer 11 _ to see the figure . The gate of the thin film transistor of ί (2: ν: ί load 420 is just constantly biased under the electric 'voltage position vbias. During the compensation period T1, mf power and S2 are turned on from time t0 to time u, and S1 si is disconnected. At the end of the compensation period T1 (ie, time 曰2: off is disconnected. Thus 'the voltage drop is stored in the library capacitors and crying U S2 during the data input T2, the input voltage v The π potential and applied to the node milk, and the gate terminals of the switches S3 and S4 ^ 軏 transistors 4U) are applied with a voltage difference in the input voltage storage capacitor 440. The voltage 1 is idle and the voltage held in the capacitor 440 Compensation. 'The rain output voltage is stored in the storage. For other-compensation operation proposal, please refer to Figure 4C together with Figure 4 (4) 0. At time t0, the voltage is higher than the gate voltage of the buffered film transistor. 4 During the compensation period T1 of the load 420, the switch is biased. It is turned on. At the end of the compensation period T1 (in the instant ^ _ period T1 is disconnected. Therefore, the voltage drop is stored in the storage and between the weeks _ , the input voltage is two in the data input to the node m, and the switches S3 and S4 and the force application port 5 The voltage of the input voltage Vi tip is applied to the gate terminal of 200818103 P2005138 16232-op-twf.doc/n. Therefore, the voltage is compensated by the voltage in the crying container. The saving power is 440. Considering the error voltage (which is the difference between the class and the output voltage), the present input voltage is shown in FIG. 5A, and the present invention has a right-to-type structure. The analog-type buffer 500 is the present invention. Preferred source = the decoupler type analog buffer includes a drive transistor 5iG, a surface storage capacitor 530, and a plurality of switches S1 to S5. Driving a body, a crystal such as a low temperature polycrystalline slab film; = 疋 = = crystal 'and the gate terminal is biased under the voltage Vbias _ Ο 的 的 的 Ο 进一步 进一步 Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο 节点 节点 节点 节点 节点 节点 节点 节点 节点 节点 节点 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The intermediate terminal ^ is connected to the node voltage Vdd under the control of the switch S1 and is also connected to the drain source of the driving transistor 51A. The point N5 is connected to the payload 520 and the driving transistor 510. _ + and under the control of the % control step into the node N6. The compensation operation method of "reducing the error voltage between the electric L and the output voltage, and minimizing the charging time and the variation of the device and making the input voltage range For example, 'I will show an embodiment of the invention for the principle of operation. The first analog buffer 5' shown in Fig. 5A refers to Figure sB. At time =, the film as the payload 520 The gate voltage of the transistor is constantly biased at voltage · bit Vbms. During the compensation period T1, the switch is turned on from time t 〇 to time t1, and at time t1, the switch w is switched off. At the end of the compensation period T1 (i.e., time t2), the switch is turned off. Thus, the electric material is stored in the storage capacitor 53A. During the data input period T2, from time t2 to time β(4), the input voltage Vin is converted to a logic high level and applied to the node m, and the gate terminal of the driving transistor 510 is applied to the input county vln. The voltage and the voltage difference maintained in the storage capacitor 53A. Therefore, the output voltage is 仏 stored in the storage capacitor 53A. During the data input period T2, the period 时间 = and s: from time t3 to time w, and the switch S5 is turned on to turn the voltage V(10) I to the input voltage Vin. From the time t3 of the period t3, the output f voltage Vout# is matched with the human voltage Vi = slow === with 』===:: analogy of the variable source follower type analog buffer 500 The input and read-out methods can minimize the charging_and device characteristics and maximize the input voltage_. The charging time of the analog-type analog buffer 500 is less than 15 叩 seconds = the conventional source is 撼 (4) The money is larger than the current (4) charging) ^ As shown in Fig. 6A, the charging time is about 8. Please refer to FIG. 6B, which shows that the proposed source has a linear relationship between the input voltage Vin of the lighter 500 and the input voltage Vin of the output voltage (10) and the output voltage Vout = the input voltage Vin and the output The voltage difference between the voltages Vout is significantly reduced; the source-supplement analog buffer and method proposed by the thinker reduce the error voltage. Please refer to phase W again, and the relationship between the source voltage and the input voltage in the analog buffer is applied. The error voltage is reduced below 〇 〇 5 (5 〇〇e: 〇 2 - which is lower than the analogy of the analogy

决差電壓那樣。 T J ϋ 圖7A中緣示當輸入電壓為4V、w或6v時,圖5a 的源極隨輕11型類比緩脑喊地卡雜擬&果,其 f不源極_器型類比緩衝器500的模擬輸出電壓(ν_) f形與操作時間。為了研究設備變化對電路性能的影響, 帝^值巾執仃假設正態分佈的蒙地卡羅顯,且臨界值 电2,口移動率的偏差分別為1 V、1 V、77.1 cm2/vs和20 ⑽=。電路模擬中LTPS薄膜電晶體的每—者獨立變 ί魏Ϊ由比較圖2A的源極隨翻綱的結果,顯然源極 夕σ 00比圖5A的源極隨搞器型類比緩衝器5⑻受到 更多因LTPS薄膜電晶體變化導致的變化。 14 200818103 P2005138 16232-op-twf.doc/n 本發明的源極隨耦器型類比緩衝器具有對於多晶矽薄 膜電晶體特徵變化的高抗擾性特徵、簡單配置能力、低功 率消耗和信號定時變化(即非飽和現象)最小化的能力。 本赉明的源極隨|馬裔型類比緩衝器適合用於有效矩陣顯示 器中,例如主動矩陣液晶顯示器(AMLCD,active㈤血汶 liquid crystal display )或主動矩陣有機發光顯示器 (AMOLED, active matrix organic light emitting display ) 〇 更具體地說,本發明的源極隨耦器型類比緩衝器適合用於 〔、 AMLCD或AMOLED的“面板上系統,,應用。在使用多晶矽 薄膜電晶體的驅動電路中,所提議的類比緩衝器對於驅動 面板中資料匯流排的負載電容是不可缺少的。 在所屬領域中冒提出若干具有有效負載的習知源極隨 耦器型類比緩衝器。請參看圖8A,其繪示具有有效負載的 Chung的類比緩衝器和其操作原理(H j cj^g、s.w. Lee 和 C· Η· Han ’ IEE Electronics Letters,第 37 卷,第 1093 頁,2001年)的示意圖,且圖8B繪示輸出電壓變化的蒙 〇 地卡維模擬結果。请再參看圖9A,其纟會示具有有效負載的The same as the voltage difference. TJ ϋ Figure 7A shows that when the input voltage is 4V, w or 6v, the source of Figure 5a is similar to the light type 11 analogy, and its f is not a source _ type analog buffer. 500 analog output voltage (ν_) f shape and operating time. In order to study the influence of equipment changes on the performance of the circuit, the emperor value is assumed to be a normal distribution of Monte Carlo, and the critical value is 2, and the deviation of the port mobility is 1 V, 1 V, 77.1 cm2/vs. And 20 (10)=. In the circuit simulation, each of the LTPS thin film transistors is independently changed. By comparing the source of Fig. 2A with the result of the gradual change, it is apparent that the source σ σ 00 is more than the source hopper type analog buffer 5 (8) of Fig. 5A. More changes due to changes in the LTPS film transistor. 14 200818103 P2005138 16232-op-twf.doc/n The source follower type analog buffer of the present invention has high immunity characteristics, simple configuration capability, low power consumption and signal timing variation for polycrystalline germanium transistor crystal characteristics. The ability to minimize (ie, non-saturation). The source of the present invention is suitable for use in an effective matrix display, such as an active matrix liquid crystal display (AMLCD, active liquid crystal display) or an active matrix organic light display (AMOLED, active matrix organic light). In particular, the source follower type analog buffer of the present invention is suitable for "on-panel systems, applications of [AMLCD or AMOLED." In a driving circuit using a polycrystalline silicon film transistor, The proposed analog buffer is indispensable for the load capacitance of the data bus in the drive panel. Several conventional source follower type analog buffers with payloads are proposed in the art. Please refer to FIG. 8A, which has Chung's analog buffer of the payload and its principle of operation (H j cj^g, sw Lee and C. ' Han ' IEE Electronics Letters, Vol. 37, p. 1093, 2001), and Figure 8B The result of the Monte Carlo simulation of the output voltage change. Please refer to Figure 9A again, which will show the payload.

Kida 的類比緩衝态(γ· Kida、Y· Nakajima、M· Takatoku、 Μ· Minegishi、S· Nakamura、Υ· Maki 和 Τ· Maekawa, EURODISPLAY,第831頁,2002年),且其蒙地卡羅模 擬結果也在圖9B中繪示。 請參看圖10A,其比較習知源極隨耦器' chung的類 比緩衝器、K i da的雙偏移抵消類比缓衝器和本發明所提議 的類比緩衝器中根據蒙地卡羅模擬結果計算得到的輸出電 15 200818103 P2005138 16232-op-twf.doc/n 以示準偏i。所有電路包含有效負載以抵消非飽和行為。 /、現有技術概,本發_提議_比緩衝^ 操作範圍和較小偏差在内的優點而顯著。此外,偏差更+ 人電M ’這反映了所提議的電路的良好補償。圖 應情示與Vbias有_輸出電雜準偏差和功率消 耗’其展現Vbias應有恰當設計以使偏差最小化且同 率消耗最低。 树_源極_ ϋ型巍緩衝器具有對於多晶石夕薄 ( 冑電晶體特徵變化的高抗擾轉徵、簡單配置能力、低功 率消耗和信號定時變化(即,非飽和現象)最小化的能力, 其適於驅動主動矩陣顯示器中多個資料匯流排的負載。顯 示器具有多個源極隨麵器型類比緩衝器以用於驅動顯示器 中多個資料匯流排的負載電容’其在圖η情示。顯示器 1100包含面板1130、閘極驅動設備111〇和源極驅動設^ 1120。閘極驅動設備111G的多個閘極線(例如,η個間極 線 1112!、11122、11123、…、1112η)連接到面板 113〇,且 Ο 源極驅動設備1120的多個資料線(例如,m個資料線 .11221、11222、11223、...、U22m)連接到面板 113〇,且 閘極線和資料線以陣列方式互相連接。多個晝素被插入在 • 閘極線與資料線的互連點之間。 源極驅動没備1120可包含位移暫存器η】!、資料閂 鎖電路1123、電位移位器1125、數位/類比轉換器1127和 緩衝设備1129。缓衝設備1129包含m個緩衝單元ii29l、 11292、11293、…、1129m以耦合到相應的資料線1122ι、 16 200818103 P2005138 16232-op-twf.doc/n 11222、11223、···、和 1122m。缓衝單元 1129ι、η]%、 11293、…、1129m如本發明前述實施例中介紹的類比緩衝 為。本發明的源極隨耦器型類比缓衝器適合用於amlcd 或AMOLED的“面板上系統”(s〇p,System 〇n細⑴應 用。在使用多晶矽薄膜電晶體的驅動電路中,所提議的類 比緩衝器對於驅動面板中資料匯流排的負載電容是不可缺 少的。 、 雖然本發明已以較佳實施例揭露如上,铁 限定本刺’任何賴娜賴_ 識_ 脫離本發明之精神和範圍内,當可二不 ::本發明之保護範圍當視後附之一 【圖式簡單說明】 圖1A是主動矩陣顯示器中使 典型源極隨的電路圖。 賴電晶體的 Ο 圖1Β繪示圖1Α源極隨耦器的輪 圖1c繪示漏極電流(Id)和 ^ :的波形。 極與源極之間的電壓(Vgs)曲線。的缚膜電晶體的閘 圖2A繪示源極隨耦器。 :示圖2A源極隨耦器的輪出電壓波來 、會示具有有效負載的源極 波开广 和圖3C繪示施加到:;類比緩衝器。 緩衝益的個別補償操作。 的源極隨耦器型類比 圖4八繪子目+‘ 、、有效負載的源極隨輕器型類比緩衝器。 17 200818103 P2005138 16232-op-twf.doc/n .圖4B和圖4C繪示施加到圖4A的源極隨耦器型類比 緩衝器的個別補償操作。 心f 5A緣示本發明優選實施例的具有有效負載的源極 1^麵為型類比緩衝器。 個別施加卿5A的源極隨抑賴比緩衝器的 比缓變糾®5A㈣'極軸器型類 壓圖5A的源極隨給鶴比_11的輸入電 [Vln與輪出電壓V⑽之間的關係。 的輸入電器型類比缓衝器 源極i輕器型為4 v、5 v或6 v時圖3A的 結果。 員比綾衝裔的蒙地卡羅(MonteCarlo)模擬 Ο 類比緩衝器比緩衝器、恤的雙偏移消除 模擬的與Vh·二 如6義的類比緩衝器中根據蒙地卡羅 果。〃阳有關的輸出電壓標準偏差和功率消耗的結 圖8 A纟會干百r »_ 操作原理的示音/圖。效負载的chung的類比緩衝器和其 圖犯珍示固 變化的蒙地卡羅^擬的類比缓衝器的輪出電壓 圖9A、♦示ι、 /、 政負载的Kida的雙偏移抵消類比緩 18 200818103 P2005138 16232-〇p-twf.doc/n 衝器。 圖9 Β繪示具有有效負載的K i d a的雙偏移抵消類比緩 衝器的輸出電壓變化的蒙地卡羅模擬結果。 圖10A!會示習知源極隨轉器、、Chung㈣比緩衝器、 =的雙偏移抵義比緩衝器和本發明所提議的類比緩 =中根錄地卡祕擬計算得_輸出電壓標準偏差的 比較結果。 =_ !會示Chung的類比緩衝器、哪的雙偏移抵消 =緩衝ϋ和本發簡提議軸比緩衝財根據蒙地卡羅 =的與Vbias有關的輸出電壓標準偏差和功率消耗的結 果0 …圖11緣示與顯示器有關的本發明的—實施例,所述顯 =具有多個源極_H型類比緩衝器㈣於驅動 個賢料匯流排的負載電容。 / 【主要元件符號說明】 Ο 100 :源極隨耦器 110 :薄膜電晶體 200 :源極隨耦器 300 ·源極隨麵器 320 :有效負載 400、50G:源極隨編型類比緩衝器 410、510 ·•驅動電晶體 ϋ 420、520 :有效負載 430 ··負載電容器 19 200818103 P2005138 16232-op-twf.doc/n 440、530 ··儲存電容器 1100 :顯示器 1110 :閘極驅動設備 1112!、11122、11123、…、1112n :閘極線 1120 :源極驅動設備 1130 ··面板 1122i、11222、11223、…、1122m :資料線 1121 :位移暫存器 1123 :資料閂鎖電路 1125 ·•電位移位器 1127 :數位/類比轉換器 1129 :缓衝設備 1129〗、11292、11293、…、1129m ••緩衝單元 Ml、M2 :薄膜電晶體 C1 :電容器 S1〜S4 :開關Kida's analog buffer state (γ· Kida, Y·Nakajima, M. Takatoku, Μ·Mengegishi, S. Nakamura, Υ·Maki and Τ·Maekawa, EURODISPLAY, p. 831, 2002), and its Monte Carlo The simulation results are also shown in Figure 9B. Referring to FIG. 10A, the analog source follower 'chung's analog buffer, K i da's double offset cancellation analog buffer, and the proposed analog buffer are calculated according to Monte Carlo simulation results. The output power 15 200818103 P2005138 16232-op-twf.doc/n to show the deviation i. All circuits contain a payload to counteract the unsaturated behavior. /, the prior art, the present invention _ proposal _ more significant than the buffer ^ operating range and small deviation. In addition, the deviation is + the power M' which reflects the good compensation of the proposed circuit. The diagram should show that Vbias has _output electrical misalignment and power dissipation, which indicates that Vbias should be properly designed to minimize bias and minimize the same rate of consumption. The tree_source__-type buffer has minimized high-disturbance transitions, simple configuration capabilities, low power consumption, and signal timing variations (ie, non-saturation) for polycrystalline thin crystals. Capability of driving a load of multiple data busbars in an active matrix display. The display has a plurality of source-facer analog buffers for driving load capacitance of multiple data busbars in the display. The display 1100 includes a panel 1130, a gate driving device 111A, and a source driving device 1120. A plurality of gate lines of the gate driving device 111G (for example, n interpolar lines 1112!, 11122, 11123, ..., 1112η) is connected to the panel 113A, and a plurality of data lines (for example, m data lines. 11221, 11222, 11223, ..., U22m) of the source driving device 1120 are connected to the panel 113A, and the gate The polar lines and the data lines are connected to each other in an array. A plurality of elements are inserted between the interconnection points of the gate lines and the data lines. The source driver 1120 can include a displacement register η]! Lock circuit 1123, potential shifter 11 25. A digital/analog converter 1127 and a buffer device 1129. The buffer device 1129 includes m buffer units ii29l, 11292, 11293, ..., 1129m for coupling to respective data lines 1122ι, 16 200818103 P2005138 16232-op-twf. Doc/n 11222, 11223, ..., and 1122m. Buffering units 1129, η]%, 11293, ..., 1129m are analog buffers as described in the foregoing embodiments of the present invention. Source follower type of the present invention Analog buffers are suitable for "on-panel systems" (am〇p, System 〇n fine (1) applications for amlcd or AMOLED. In the driver circuit using polysilicon thin film transistors, the proposed analog buffer for the data in the driver panel The load capacitance of the bus bar is indispensable. Although the invention has been disclosed in the preferred embodiment as above, the iron defines the thorn 'any Ryna Lai _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The scope of protection of the present invention is as shown in the accompanying drawings [Simplified description of the drawings] Fig. 1A is a circuit diagram of a typical source in an active matrix display. Ο 电 Ο Figure 1 Β Figure 1 Α source follower wheel Figure 1c shows Waveforms of the pole currents (Id) and ^: The voltage (Vgs) between the pole and the source. The gate of the bonded transistor Figure 2A shows the source follower. : Figure 2A Source follower The turn-off voltage wave will show the source wave broadening with the payload and Figure 3C shows the application to: analog buffer. The individual compensation operation of the buffer benefit. The source follower type analogy is shown in Figure 4. Subhead +', the source of the payload follows the lighter type analog buffer. 17 200818103 P2005138 16232-op-twf.doc/n. Figures 4B and 4C illustrate individual compensation operations applied to the source follower type analog buffer of Figure 4A. The heart f 5A indicates that the source having the payload of the preferred embodiment of the present invention is a type analog buffer. The source of the individual application of the 5A is dependent on the ratio of the buffer to the voltage of the input voltage [Vln and the output voltage V(10) of the source of the pylon _11. Relationship. The input device analog buffer is the result of Figure 3A when the source i-light mode is 4 v, 5 v or 6 v. The Monte Carlo simulation of the 绫 绫 Ο analog 缓冲器 analog buffer is better than the double offset of the buffer, the shirt is simulated with the Vh·2 as the 6 sense analog buffer according to Monte Carlo. The correlation between the standard deviation of the output voltage and the power consumption of Fuyang Figure 8 A纟 will dry 100r »_ The sounding/figure of the operating principle. The chung's analog buffer of the payload and its analogy of the Monte Carlo simulation of the wheel-out voltage of the solid-state buffer Figure 9A, ♦ ι, /, political load of Kida double offset offset Analogy 18 200818103 P2005138 16232-〇p-twf.doc/n Punch. Figure 9 shows the Monte Carlo simulation of the output voltage variation of the double offset offset analog buffer with K i d a payload. FIG. 10A! shows a conventional source flip follower, a Chung (four) ratio buffer, a double offset ratio buffer of =, and an analogy of the present invention. Comparing results. =_ ! Shows Chung's analog buffer, which double offset offset = buffer ϋ and the current estimate of the axis is buffered according to Monte Carlo = Vbias related output voltage standard deviation and power consumption results 0 Fig. 11 shows an embodiment of the invention relating to a display, said display having a plurality of source-H type analog buffers (4) for driving the load capacitance of the bus. / [Main component symbol description] Ο 100 : Source follower 110 : Thin film transistor 200 : Source follower 300 · Source follower 320 : Payload 400, 50G: Source follow-up analog buffer 410, 510 ·• Drive transistor 420 420, 520: Payload 430 · Load capacitor 19 200818103 P2005138 16232-op-twf.doc/n 440, 530 · Storage capacitor 1100: Display 1110: Gate drive device 1112! , 11122, 11123, ..., 1112n: gate line 1120: source drive device 1130 · panel 1122i, 11222, 11223, ..., 1122m: data line 1121: shift register 1123: data latch circuit 1125 · potential Shifter 1127: Digital/analog converter 1129: buffer device 1129, 11292, 11293, ..., 1129m • Buffer unit M1, M2: thin film transistor C1: capacitor S1 to S4: switch

Nl、N2、N3、N4、N5、N6 ··節點 T1 :補償週期 T2 :資料輸入週期Nl, N2, N3, N4, N5, N6 ··Node T1: compensation period T2: data input period

Cload :負載電容器Cload: load capacitor

Id ·漏極電流Id ·Drain current

Vin :輸入電壓Vin : input voltage

Vdd :操作電壓Vdd: operating voltage

Vout :輸出電壓Vout: output voltage

Vbias ··偏壓 20Vbias ·· Bias 20

Claims (1)

200818103 P2005138 16232-〇p.twf.doc/n 十、申請專利範圍: 種源極隨耦器型類比緩衝器,兑 端子經由第=_ (二】,’所述儲存電容器的第二 驅動)連接到輸入電壓(Vin)源; 所述儲存:3:中所_動電晶體的閘極端子連接到 =ΐΓ 壓源,且所述驅動電晶體的源極端 端子;以及幵關(S2)連接到所述儲存電容器的所述第二 有效負載’其中所述有效負载的第 ”晶體的所述源極端子且經由第四開關(s4) 戶載Γί極==類比緩衝器的輸出端子,且所述有效負 到接地,所述有效負載由偏壓控制,其 Ο '^她圍第1項所述的源極隨細型類比緩 衝益’其中所述有效負载是低溫多晶石夕薄膜電晶體。每 “4·:觀比緩衝胃的補錢作料,所_比緩衝哭 電晶體和負载電容器,其帽存電容 關女置在所述驅動電晶體的_端子與源極端子之間 所述驅動電晶體的漏極端子連接到操作電麗源,所述負载 200818103 P2005138 16232-op-twf.doc/n 電 屯容器安置在所述開關和所述源極端子的接點與接地之 間’其中輸入電壓源經由第二開關連接到所述源極隨耦器 型類比緩衝器的輸出端子,其中所述補償操作方法包括: —α在補償週期期間,所述第一開關被接通且所述儲存電 容器耦合到所述操作電壓源,因而電壓降被儲存在所述二 存電容器中;以及 在資料輸入週期期間,在所述資料輪入週期的第一週 期,輸入電壓被施加到所述儲存電容器與所述第一開關之 點處’因而所述驅動電晶體的所述閘極端子被施加 所这輸入和鱗在所雜存電容器巾的電壓差,且所 的輸出電㈣儲存在所述儲存電容器中的電 s且在所述資料輸入週期的第二週期,所述第二 在停範圍第4項所㈣補償操作方法,其中 ϋ ί容_所述操作電壓源之後的預定 才間間隔所述弟一開關被斷開。 所述專利範圍第5項所述的補償操作方法,其中 /種低溫多晶料膜電晶體,且由偏壓控制。 以用其具有多個源極軸器_比緩衝器 述源極_器型類比緩衝器的每一者包j的負載电合’所 -門1=容器,其中所述儲存電容器的第-端子蝴 開關(81)物_鶴,_物容器的第ί 22 200818103 職138咖,购缝 端子經由第三開闕(S3)連接到輸入電壓源; 驅動電晶體,其中所述驅動電晶體的 所述儲存電容器的所述第一端子,所二 、1 端子i卓技ί丨ί挪、艇動電晶體的漏極 =由=_⑻)連接到所述儲存電容器的所述第二 〇 有效負載,其中所述有效負載的第 驅動電晶體的所述源極端子且經由第四 以 所述f爾綱型類比緩衝器的輸出端;上:4= 載的第二端子連接到接地’所述有效 立 中所述輸入電壓源經由第五開關(、^偏£控制,其 麵器型類比緩衝n的所述輸出端子。連接賴述源極隨 8. 如申請專利範圍第7項所述 動電晶體是低溫多晶矽薄膜電晶體。‘、不态,其中所述驅 9. 如申請專利範圍“的 效負載是低溫多晶石夕薄膜電晶體。♦、、、、不為,其中所述有 〇 23200818103 P2005138 16232-〇p.twf.doc/n X. Patent scope: A source-source follower type analog buffer, the terminal is connected via the == (2), 'the second drive of the storage capacitor') To the input voltage (Vin) source; the storage: 3: the gate terminal of the electro-transistor is connected to the = voltage source, and the source terminal of the driving transistor; and the gate (S2) is connected to The second effective load of the storage capacitor 'the source terminal of the first crystal of the payload and via the fourth switch (s4) is the output terminal of the =ί pole== analog buffer, and The effective negative to ground, the effective load is controlled by the bias voltage, and the source described in item 1 follows the fine analog buffering effect, wherein the effective load is a low temperature polycrystalline thin film transistor. Every "4:: the ratio of the stomach to the stomach of the money, the material is more than the buffering crying transistor and the load capacitor, the cap capacitor is placed between the _ terminal and the source terminal of the drive transistor. The drain terminal of the transistor is connected to the operating electric source, Load 200818103 P2005138 16232-op-twf.doc/n an electric raft container is disposed between the junction of the switch and the source terminal and ground] wherein an input voltage source is coupled to the source with a second switch An output terminal of the analog analog buffer, wherein the compensation operation method comprises: -α during a compensation period, the first switch is turned on and the storage capacitor is coupled to the operating voltage source, and thus the voltage drop is stored In the two-storage capacitor; and during a data input period, during a first period of the data round-in period, an input voltage is applied to a point of the storage capacitor and the first switch' The gate terminal of the transistor is applied with a voltage difference between the input and the scale of the capacitor, and the output power (4) is stored in the storage capacitor and is in the data input period In the second cycle, the second operation mode of the fourth (4) compensation range, wherein the predetermined switch interval after the operation voltage source is disconnected. The method of compensating operation described in claim 5, wherein the low temperature polycrystalline film transistor is controlled by a bias voltage. For the load of each of the packages j having a plurality of source shafts than the buffers, the gates are connected to the gates, wherein the first terminal of the storage capacitors Butterfly switch (81) _ crane, _ object container of the ί 22 200818103 job 138 coffee, the purchase of the terminal is connected to the input voltage source via a third opening (S3); drive transistor, wherein the drive transistor The first terminal of the storage capacitor, the second terminal, the first terminal, the drain of the marine electrodynamic transistor, and the second 〇 payload connected to the storage capacitor by ???(8) Wherein the source terminal of the first drive transistor of the payload is via the fourth output terminal of the analog buffer of the class; the upper: 4 = the second terminal of the load is connected to the ground. The input voltage source of the center is controlled by the fifth switch, and the output terminal of the buffer type analog buffer n is connected with the source of the source according to 8. The electro-op crystal is as described in claim 7 Low temperature polycrystalline germanium thin film transistor. ', not state, wherein the drive 9. If the application scope of the patent application is "a low-temperature polycrystalline slab film transistor. ♦,,,,,,,,,,,
TW096124495A 2006-10-10 2007-07-05 Analogue buffer, compensating operation method thereof, and display therewith TWI371023B (en)

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