TW200816516A - Light emitting diode and method for making the same - Google Patents

Light emitting diode and method for making the same Download PDF

Info

Publication number
TW200816516A
TW200816516A TW95136383A TW95136383A TW200816516A TW 200816516 A TW200816516 A TW 200816516A TW 95136383 A TW95136383 A TW 95136383A TW 95136383 A TW95136383 A TW 95136383A TW 200816516 A TW200816516 A TW 200816516A
Authority
TW
Taiwan
Prior art keywords
light
top surface
guiding lens
light guiding
emitting diode
Prior art date
Application number
TW95136383A
Other languages
Chinese (zh)
Other versions
TWI311382B (en
Inventor
Shao-Han Chang
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW95136383A priority Critical patent/TWI311382B/en
Publication of TW200816516A publication Critical patent/TW200816516A/en
Application granted granted Critical
Publication of TWI311382B publication Critical patent/TWI311382B/en

Links

Abstract

The present invention relates to a light emitting diode used for a backlight module. The light emitting diode includes a light emitting semiconductor device, a lens and a coating layer. The lens includes a light incident surface facing the light emitting semiconductor device, a top surface opposite to the light incident surface, and a light emitting surface interconnecting the light incident surface and the top surface. The coating layer is located on the top surface. The coating layer is formed of transparent resin and aluminum flakes dispersed into the transparent resin. The present invention also provides methods for making the light emitting diode. The light emitting diode can reduce light emitting energy in an area of the top surface.

Description

200816516 九、發明說明: 【發明所屬之技術領域】 本發明涉及一種發光二極體及其製備方法,尤其涉及一 種側光式發光二極體及其製備方法。 【先前技術】 目前背光模組中之發光裝置一般爲冷陰極癸光燈(cold Cathode Fluorescent Lamp,CCFL)與發光二極體(Light200816516 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode and a method of fabricating the same, and more particularly to an edge-lighting light-emitting diode and a method of fabricating the same. [Prior Art] At present, the light-emitting device in the backlight module is generally a cold cathode fluorescent lamp (CCFL) and a light-emitting diode (Light).

Emitting Diode,LED)。其中,發光二極體係一種固態之半導 體發光裝置’其係利用二極體内分離之兩種載流子(帶負電 之電子與帶正電之電洞)相互結合而産生光。與冷陰極螢光 燈相比,發光二極體具有高色彩飽和度、不含采、壽命長及 可透過驅動電流調整色溫等優點。 請參見u采用習知發光二極體之背光模組示意圖。 該背光模組1〇包括反射罩u,於反射罩1:之上方依次包括Emitting Diode, LED). Among them, the light-emitting diode system is a solid-state semiconductor light-emitting device which combines two kinds of carriers (negatively charged electrons and positively charged holes) separated in a dipole to generate light. Compared with cold cathode fluorescent lamps, LEDs have the advantages of high color saturation, no mining, long life and adjustable color temperature through drive current. Please refer to the schematic diagram of a backlight module using a conventional light-emitting diode. The backlight module 1 includes a reflective cover u, which is sequentially included above the reflective cover 1:

之光線從入光面U21進入導光透鏡122 入射光反射至出光面1223而射出。 6 200816516 儘管導光透鏡122之頂面1222能使部分滿足全反射條 件之入射光線發生全反射,但仍存在較多不滿足全反射條件 之光線,會於與垂直方向成較小角度之範圍内出射至光學片 14;爲避免該部分入射光學片14之光線於發光二極體12正 上方形成亮點而影響背光模組10之發光效果,於光學片14 與光源之間需設有含有反射片131之透明塑膠板13,以減小 該部分可入射至光學片14之光線之強度。然,透明塑膠板 13之使用不僅容易使背光模組10成本增加,且於使用過程 中該透明塑膠板13還可能産生黃化現象而影響背光模組10 之質量;另,於組裝時還需考慮反射片131與發光二極體12 之對準問題。 因此,有必要提供一種可減少與垂直方向成較小角度範 圍内之出光量之發光二極體及其製備方法。 【發明内容】 鑒於上述狀況,有必要提供一種可減少與垂直方向成較 小角度範圍内之出光量之發光二極體及其製備方法。 一種發光二極體,其包括一半導體發光元件及一導光透 鏡,該導光透鏡包括一與該半導體發光元件相對之入光面、 一與該入光面相對之頂面及一位於該導光透鏡外側之出光 面,該發光二極體還包括一形成於該頂面之銘衆漆塗層,該 在呂衆漆塗層包括透明樹脂基材及分散於該透明樹脂基材之 複數鋁鱗片。 一種發光二極體之製備方法,其包括如下步驟:提供一 導光透鏡與一半導體發光元件,該導光透鏡包括一入光面、 7 200816516 一與該入光面相對之頂面及一位於該導光透鏡外側之出光 面;採用透明樹脂與鋁鱗片混合配置成鋁漿漆;塗佈該鋁漿 漆於該導光透鏡之頂面;固化該鋁漿漆,使其於該導光透鏡 之頂面形成鋁漿漆塗層;及將形成有鋁漿漆塗層之導光透鏡 與該半導體發光元件組裝成發光二極體。 又一種發光二極體之製備方法,其包括如下步驟:提供 一導光透鏡與一半導體發光元件,該導光透鏡包括一入光 #面、一與該入光面相對之頂面及一位於該導光透鏡外側之出 光面;將該導光透鏡與該半導體元件組裝於一起;採用透明 樹脂與鋁鱗片混合配置成鋁漿漆;塗佈該鋁漿漆於該導光透 鏡之頂面;及固化該鋁漿漆,使其於該導光透鏡之頂面形成 症呂裝漆塗層。 相對于習知技術,所述發光二極體之導光透鏡之頂面形 成包括透明樹脂基材與鋁鱗片之鋁漿漆塗層;使用時,由於 鋁漿漆塗層内包含有鋁鱗片,該鋁鱗片具有之反射功能,可 、將。I5刀未被頂面反射之光線再被該鋁鱗片反射至出光面而 出射;且部分從鋁漿漆塗層透射之光線,還可於鋁鱗片作用 下發生散射’進-步減小與垂直方向成較小角度範圍内之光 線之出射量。因此上述發光二極體具有可減少與垂直方向成 較小角度範圍内之出光量之優點。另外,由於銘祕塗層係 直接形成於導光透鏡之頂面,因此其不存在習知技術中組裝 反射片與發光二極體時之對準問題。 【實施方式】 8 200816516 下面將結合附圖及實施例對發光二極體及其製備方法 做進一步詳細說明。 九睛參見圖2’本發明發光二極體較佳實施例一之剖面示 =圖。該發光二極體包括有一半導體發光元件ι〇ι、一 =透鏡U)2及-紹漿漆塗層1〇3。導光透鏡撤包括一與 相=體發光兀件101相對之入光面搬1、1入光面順 相、查頂面1〇22及—位於導光透鏡102外側並與頂面1022 1之之出光面1023。紹漿漆塗層1〇3形成於上述頂面 麵鱗片^包括翻樹脂基材及分散於該基材之複數 根據不同之出光要求,導光透鏡1〇2可採用不同之带 爲鏡皿從出光面腦各處出射之光線較 :勺勾該V先透鏡102優選爲旋轉體;具體於本實施 =導光透鏡⑽爲中心對稱之旋轉體,其入光面咖 頂面爲近似“Π ”形’頂面繼爲漏斗形,且該漏斗敎 、面1022之橫截面之兩侧爲弧形。 銘漿漆塗層103覆蓋於頂面繼,其可充滿該整個頂 面1022所形成之凹槽,或僅覆蓋於頂面1()22並形成與該頂 面1022相對應之漏斗形凹槽;具體於本實施例中,銘裝漆 塗層103之形狀爲與頂面觀所形成之凹槽形狀相配合: 錐體。其中,鋁漿漆塗層103中之透明樹脂基材可爲固=透 明樹脂,例如紫外光固化透明樹脂。鋁漿漆塗層中之鋁 鱗片用於減少光線從鋁漿漆塗層1〇3之透射及^少量可透^ 之光線發生散射。 ' 9 200816516 工作時,半導體發光元件ιοί所發出之光線從入光面 1021進入導光透鏡102,由於頂面1022之反射作用,部分 光線被反射至出光面1023出射。另,由於鋁漿漆塗層103 内包含有鋁鱗片,該鋁鱗片具有之反射功能,可使未被頂面 1022反射之光線再被該鋁鱗片反射至出光面1023而出射; 且較小部分可以從鋁漿漆塗層103透射之光線,還可於該鋁 鱗片作用下發生散射,進一步減小與垂直方向成較小角度範 圍内之光線。因此藉由該鋁漿漆塗層103之作用可易於減少 以與垂直方向成較小角度之光線入射至光學片,繼而避免習 知技術中含有反射片之透明塑膠板之使用。且,由於鋁漿漆 塗層103係直接形成於導光透鏡102之頂面1022,因此不存 在習知技術組裝反射片與發光二極體時之對準問題。 請參見圖3,本發明發光二極體較佳實施例二之剖面示 意圖。該發光二極體200與實施例一之發光二極體100相 似,亦包括導光透鏡202與鋁漿漆塗層203,其不同點在於: 該導光透鏡202之頂面2022邊緣向上延伸形成一環形凸起 2024,該環形凸起2024可用於防止鋁漿漆塗層203於製備 過程中從頂面2022溢出。 請參見圖4,本發明發光二極體較佳實施例三之剖面示 意圖。該發光二極體300與實施例二之發光二極體200相 似,亦包括導光透鏡302、鋁漿漆塗層303與環形凸起3024, 其不同點在於:鋁漿漆塗層303各處之厚度基本相等,鋁漿 漆塗層303均勻覆蓋於導光透鏡302之頂面3022上。由於 該鋁漿漆塗層303各處之厚度基本相等,因此其所使用之鋁 10 200816516 漿漆材料可較少。 本發明實施例上述發光二極體之製備方法包括如下步 驟: 步驟一,提供導光透鏡與半導體發光元件,請參見圖 5,該導光透鏡402包括一入光面4021、一與該入光面4021 相對之頂面4022及一位於導光透鏡402外侧之出光面4023。 步驟二,採用透明樹脂與複數細小鋁鱗片配置鋁漿漆 4031。該步驟中,可先用溶劑溶解透明樹脂,爾後再把複數 細小鋁鱗片加入該溶解之透明樹脂中並攪拌均勻。該透明樹 脂材料可爲紫外光固化透明樹脂。 步驟三,塗佈該鋁漿漆4031於導光透鏡402之頂面 4022 ° 步驟四,固化鋁漿漆4031,使其於導光透鏡402之頂 面4022形成鋁漿漆塗層。該固化方法可採用熱固化或光固 化;當所採用之透明樹脂爲紫外光固化透明樹脂時,該固化 方法優選爲紫外光固化。 步驟五,將形成有鋁漿漆塗層之導光透鏡402與半導體 發光元件組裝成發光二極體。該步驟中可採用粘膠將導光透 鏡402固定於半導體發光元件上。 進一步,請參見圖6,爲使該銘漿漆塗層各處之厚度基 本相等,於固化鋁漿漆4031之前,包括使用治具404擠壓 滴入頂面4022上之鋁漿漆4031;治具404包括一與頂面4022 形狀相配合之錐形成型部4041,該錐形成型部4041用於與 鋁漿漆4031相作用。可以理解,如果於導光透鏡402之頂 11 200816516 面4022之邊緣形成一環形凸起4024,於採用治具404擠壓 鋁漿漆時,會更易於防止鋁漿漆4031從頂面4022溢出。 可以理解,如果適當控制製備條件,於步驟五中結合導 光透鏡402與半導體發光元件還可以提前到形成鋁漿漆塗層 之前。 綜上所述,本發明符合發明專利要件,爰依法提出專利 申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉 本案技藝之人士,在爰依本發明精神所作之等效修飾或變 化,皆應涵蓋於以下之申請專利範圍内。 【圖式簡單說明】 圖1係一種採用習知發光二極體之背光模組示意圖。 圖2係本發明發光二極體較佳實施例一之剖面示意圖。 圖3係本發明發光二極體較佳實施例二之剖面示意圖。 圖4係本發明發光二極體較佳實施例三之剖面示意圖。 圖5係充滿鋁漿漆之導光透鏡之剖面示意圖。 圖6係形成銘衆漆塗層之治具之剖面示意圖。 【主要元件符號說明】 (本發明) 發光二極體 100、200、300 半導體發光元件 101 導光透鏡 102、202 > 302、402 入光面 1021、4021 頂面 1022、2022、3022 > 4022 出光面 1023、2023、3023、4023 12 200816516 環形凸起 3024 銘漿漆塗層 103 、 203 、 303 銘漿漆 4031 治具 404 錐形成型部 4041 知) 背光模組 10 反射罩 11 發光二極體 12 半導體發光元件 121 發光區 1211 導光透鏡 122 入光面 1221 頂面 1222 出光面 1223 透明塑膠板 13 反射片 131 光學片 14 13The light enters the light guiding lens 122 from the light incident surface U21, and the incident light is reflected to the light emitting surface 1223 to be emitted. 6 200816516 Although the top surface 1222 of the light guiding lens 122 can totally reflect the incident light that satisfies the total reflection condition, there are still many rays that do not satisfy the total reflection condition, and will be in a range of a small angle from the vertical direction. The light sheet 14 is emitted to the optical sheet 14; in order to prevent the light incident on the optical sheet 14 from forming a bright spot directly above the light emitting diode 12 and affecting the light emitting effect of the backlight module 10, a reflective sheet is required between the optical sheet 14 and the light source. A transparent plastic plate 13 of 131 is used to reduce the intensity of light incident on the optical sheet 14 at the portion. However, the use of the transparent plastic plate 13 not only makes it easy to increase the cost of the backlight module 10, but also causes the yellow plastic phenomenon to affect the quality of the backlight module 10 during use; The problem of alignment between the reflection sheet 131 and the light-emitting diode 12 is considered. Therefore, it is necessary to provide a light-emitting diode which can reduce the amount of light emitted in a small angle range from the vertical direction and a method of manufacturing the same. SUMMARY OF THE INVENTION In view of the above circumstances, it is necessary to provide a light-emitting diode which can reduce the amount of light emitted in a smaller angle range from the vertical direction and a method of manufacturing the same. A light emitting diode includes a semiconductor light emitting element and a light guiding lens, the light guiding lens includes a light incident surface opposite to the semiconductor light emitting element, a top surface opposite to the light incident surface, and a guide a light-emitting surface on the outer side of the light lens, the light-emitting diode further comprising a lacquer coating formed on the top surface, the lacquer coating comprising a transparent resin substrate and a plurality of aluminum dispersed on the transparent resin substrate Scales. A method for fabricating a light emitting diode, comprising the steps of: providing a light guiding lens and a semiconductor light emitting element, wherein the light guiding lens comprises a light incident surface, 7 200816516, a top surface opposite to the light incident surface, and a a light-emitting surface outside the light guiding lens; a transparent resin and aluminum scales are mixed to form an aluminum paint; the aluminum paint is coated on the top surface of the light guiding lens; and the aluminum paint is cured to be applied to the light guiding lens The top surface forms an aluminum lacquer coating; and the light guiding lens formed with the aluminum lacquer coating layer and the semiconductor light emitting element are assembled into a light emitting diode. A method for fabricating a light emitting diode, comprising the steps of: providing a light guiding lens and a semiconductor light emitting element, wherein the light guiding lens comprises a light incident surface, a top surface opposite to the light incident surface, and a a light-emitting surface outside the light guiding lens; the light guiding lens and the semiconductor element are assembled together; the transparent resin is mixed with the aluminum flakes to form an aluminum paint; and the aluminum paint is applied on the top surface of the light guiding lens; And curing the aluminum lacquer to form a lacquer coating on the top surface of the light guiding lens. Compared with the prior art, the top surface of the light guiding lens of the light emitting diode forms an aluminum paint coating comprising a transparent resin substrate and an aluminum scale; in use, since the aluminum paint coating contains aluminum scales, The aluminum scale has a reflective function, which can be. The light that is not reflected by the top surface of the I5 knife is reflected by the aluminum scale to the light exit surface; and some of the light transmitted from the aluminum paint coating can also be scattered under the action of aluminum scales. The amount of light that is directed into a smaller range of angles. Therefore, the above-mentioned light-emitting diode has an advantage of reducing the amount of light emitted in a small angle range from the vertical direction. In addition, since the mysterious coating is formed directly on the top surface of the light guiding lens, there is no alignment problem in the conventional art in assembling the reflecting sheet and the light emitting diode. [Embodiment] 8 200816516 The light-emitting diode and its preparation method will be further described in detail below with reference to the accompanying drawings and embodiments. 9 is a cross-sectional view of the preferred embodiment 1 of the light-emitting diode of the present invention. The light-emitting diode comprises a semiconductor light-emitting element ι〇ι, a = lens U) 2 and a coating layer 1 〇 3 . The light guiding lens is removed from the light incident surface opposite to the phase light emitting element 101, the light incident surface is aligned, the top surface is aligned, and the top surface is located outside the light guiding lens 102 and is adjacent to the top surface 1022. The light surface 1023. The varnish coating 1 〇 3 is formed on the top surface scalar ^ including the resin substrate and the plurality of particles dispersed on the substrate according to different light-emitting requirements, the light guiding lens 1 〇 2 can be used as a mirror The light emitted from the surface of the light-emitting surface is better than that of the scintillation hook. The V-first lens 102 is preferably a rotating body; specifically, the rotating body of the light guiding lens (10) is symmetrical, and the top surface of the light-incident surface is approximately "Π". The top surface of the shape is funnel-shaped, and the sides of the cross section of the funnel raft and the face 1022 are curved. The paste coat layer 103 covers the top surface, which may fill the groove formed by the entire top surface 1022, or only cover the top surface 1 () 22 and form a funnel-shaped groove corresponding to the top surface 1022. Specifically, in the present embodiment, the shape of the lacquer coating 103 is matched with the shape of the groove formed by the top view: a cone. Among them, the transparent resin substrate in the aluminum paste paint layer 103 may be a solid = transparent resin such as an ultraviolet light curing transparent resin. The aluminum flakes in the aluminum lacquer coating are used to reduce the transmission of light from the aluminum lacquer coating 1 〇 3 and a small amount of permeable light. ' 9 200816516 During operation, the light emitted by the semiconductor light-emitting element ιοί enters the light guiding lens 102 from the light incident surface 1021. Due to the reflection of the top surface 1022, part of the light is reflected to the light exit surface 1023. In addition, since the aluminum lacquer coating 103 contains aluminum scales, the aluminum scales have a reflective function, so that the light not reflected by the top surface 1022 is reflected by the aluminum scales to the light exit surface 1023; and the smaller portion The light that can be transmitted from the aluminum lacquer coating 103 can also be scattered under the action of the aluminum scale to further reduce the light in a smaller angle range from the vertical direction. Therefore, by the action of the aluminum lacquer coating layer 103, it is possible to easily reduce the incidence of light incident at a small angle to the vertical direction to the optical sheet, thereby avoiding the use of the transparent plastic sheet containing the reflection sheet in the prior art. Moreover, since the aluminum lacquer coating layer 103 is directly formed on the top surface 1022 of the light guiding lens 102, there is no problem of alignment in the conventional art of assembling the reflecting sheet and the light emitting diode. Referring to Figure 3, a cross-sectional view of a preferred embodiment 2 of a light-emitting diode of the present invention is shown. The light-emitting diode 200 is similar to the light-emitting diode 100 of the first embodiment, and includes a light-guiding lens 202 and an aluminum paste coating 203, and the difference is that the top surface 2022 of the light guiding lens 202 extends upward. An annular projection 2024 can be used to prevent the aluminum paste coating 203 from escaping from the top surface 2022 during preparation. Referring to Figure 4, a cross-sectional view of a preferred embodiment 3 of the light-emitting diode of the present invention is shown. The light-emitting diode 300 is similar to the light-emitting diode 200 of the second embodiment, and includes a light guiding lens 302, an aluminum lacquer coating 303 and an annular protrusion 3024, which are different in that the aluminum lacquer coating 303 is everywhere. The thickness is substantially equal, and the aluminum lacquer coating 303 uniformly covers the top surface 3022 of the light guiding lens 302. Since the thickness of the aluminum lacquer coating 303 is substantially equal throughout, the aluminum 10 200816516 lacquer material used may be less. The method for fabricating the above-mentioned light-emitting diode according to the embodiment of the present invention includes the following steps: Step 1: providing a light guiding lens and a semiconductor light emitting element. Referring to FIG. 5, the light guiding lens 402 includes a light incident surface 4021, and the light entering the light. The surface 4021 is opposite to the top surface 4022 and a light exit surface 4023 located outside the light guiding lens 402. In the second step, the aluminum lacquer 4031 is disposed of a transparent resin and a plurality of small aluminum scales. In this step, the transparent resin may be dissolved in a solvent, and then a plurality of fine aluminum flakes are added to the dissolved transparent resin and stirred uniformly. The transparent resin material may be a UV curable transparent resin. Step 3, coating the aluminum lacquer 4031 on the top surface 4022 of the light guiding lens 402. Step 4, curing the aluminum lacquer 4031 to form an aluminum lacquer coating on the top surface 4022 of the light guiding lens 402. The curing method may be heat curing or photocuring; when the transparent resin used is an ultraviolet curing transparent resin, the curing method is preferably ultraviolet curing. In step five, the light guiding lens 402 formed with the aluminum paste coating and the semiconductor light emitting element are assembled into a light emitting diode. In this step, the light guiding lens 402 can be fixed to the semiconductor light emitting element by using an adhesive. Further, referring to FIG. 6, in order to make the thickness of the coating of the smear coating substantially equal, before the curing of the aluminum varnish 4031, the aluminum lacquer 4031 which is pressed onto the top surface 4022 by using the jig 404 is used; The 404 includes a tapered shaped portion 4041 that cooperates with the shape of the top surface 4022 for interacting with the aluminum lacquer 4031. It can be understood that if an annular projection 4024 is formed at the edge of the top surface 1010216516 of the light guiding lens 402, it is easier to prevent the aluminum paint 4031 from overflowing from the top surface 4022 when the aluminum lacquer is pressed by the jig 404. It will be appreciated that if the preparation conditions are properly controlled, the combination of the light directing lens 402 and the semiconductor light emitting element in step 5 may be advanced prior to the formation of the aluminum paste coating. In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a backlight module using a conventional light-emitting diode. 2 is a schematic cross-sectional view showing a preferred embodiment 1 of the light-emitting diode of the present invention. 3 is a schematic cross-sectional view showing a preferred embodiment 2 of the light-emitting diode of the present invention. 4 is a schematic cross-sectional view showing a preferred embodiment 3 of the light-emitting diode of the present invention. Figure 5 is a schematic cross-sectional view of a light guiding lens filled with an aluminum paste. Figure 6 is a schematic cross-sectional view of a jig forming a lacquer coating. [Description of main components] (Invention) LEDs 100, 200, 300 Semiconductor light-emitting elements 101 Light-guiding lenses 102, 202 > 302, 402 Light-incident surfaces 1021, 4021 Top surfaces 1022, 2022, 3022 > 4022 Light-emitting surface 1023, 2023, 3023, 4023 12 200816516 Ring protrusion 3024 Ming lacquer coating 103, 203, 303 Ming lacquer 4031 Fixture 404 Tapered forming part 4041 Known) Backlight module 10 Reflector 11 Light-emitting diode 12 semiconductor light emitting element 121 light emitting area 1211 light guiding lens 122 light incident surface 1221 top surface 1222 light emitting surface 1223 transparent plastic plate 13 reflective sheet 131 optical sheet 14 13

Claims (1)

200816516 十、申請專利範圍 1·一種發光二極體,其包括一半導體發光元件及一導光透 鏡,該導光透鏡包括一與該半導體發光元件相對之入光 面、一與該入光面相對之頂面及一位於該導光透鏡外侧之 出光面,其改良在於:該發光二極體還包括一形成於該頂 面之鋁漿漆塗層,該鋁漿漆塗層包括透明樹脂基材及分散 於該透明樹脂基材之複數銘鱗片。 2.如申請專利範圍第1項所述之發光二極體,其中該導光透 鏡還包括有一環形凸起,該環形凸起係從該頂面邊緣向上 延伸而成,其用於防止該鋁漿漆於塗佈過程中溢出。 3·如申請專利範圍第i項所述之發光二極體,其十該導光透 鏡爲中心對稱之旋轉體,該頂面爲漏斗形。 4. 如申凊專利_第3項所述之發光二極體,其中該銘裝漆 塗層覆蓋於該頂面並充滿該整個頂面所形成之凹槽。 5. 如申請專利範圍第3項所述之發光二極體,其中該铭浆漆 塗層覆蓋於該頂面並形成與該頂面相對應之漏斗形凹槽。 曰種發光二極體之製備方法,其包括如下步驟: 提供-導光透鏡與-半導體發光元件,該導光透鏡包括一 入光面、-與該入光面相對之頂面、及一位於該導光透 鏡外側之出光面; 塗佈該二配置成_ 固化該鋁漿漆 層;及 使其於該導光透鏡之頂面形成鋁漿漆塗 14 200816516 將形成有紹襞漆、舍>道止$ 導透鏡與該半導體發光元件組 裝成發光二極體。 7·如=專·_ 6賴述之製備方法,其中該導光透鏡 還匕括有一環形凸起,該環形凸起係從該頂面邊緣向上延 伸而成’其用於防止該紹漿漆於塗饰過程中溢出。 8. 如申請專利範圍第6項所述之製傷方法,其中,於塗佈該 漆㈣導光透鏡之頂面後’還包括使用治具調整該铭 漿漆於該頂面之厚度,其中該治具包括一與該導光透鏡之 頂面形狀相配合之成型部。 9. 如申請專利範圍第6項所述之製備方法,其中該固化步驟 採用熱固化與光固化之一。 10·如申請專利範圍第6項所述之製備方法,其中該導光透鏡 爲中心對稱之旋轉體,該頂面爲漏斗形。 η.如申請專利範圍第1G項所述之製備方法,其中該紹裝漆 塗層覆蓋於該頂面並充滿該整個頂面所形成之凹槽。 12. 如申請專利難第1Q項所述之製備方法,其中該紹裝漆 塗層覆蓋於該頂面並形成與該頂面相對應之漏斗形凹槽。 13. —種發光二極體之製備方法,其包括如下步驟: ㈢ 提供一導光透鏡與一半導體發光元件,該導光透鏡包括— 入光面、一與該入光面相對之頂面、及一位於該導光透 鏡外側之出光面; 將該導光透鏡與該半導體元件組裝於一起; 採用透明樹脂與鋁鱗片混合配置成鋁漿漆; 塗佈該銘漿漆於該導光透鏡之頂面;及 15 200816516 固化該紹襞漆,使其於該導光透鏡之頂面形成銘浆漆塗 層。 14. 如^青專利範圍f 13項所述之製備方法,其中該導光透 鏡還包括有一裱形凸起,該環形凸起係從該頂面邊緣向上 I伸而成,其用於防止該鋁漿漆於塗佈過程中溢出。 15. 如申睛專利範圍第13項所述之製備方法,其中,於塗佈 該紹漿漆於該導光透鏡之頂面後,還包括使用治具調整該 銘漿漆於該頂面之厚度,其中該治具包括一與該導光透鏡 之頂面形狀相配合之成型部。 16. 如申請專利範圍第13項所述之製備方法,其中該固化步 驟採用熱固化與光固化之一。 H·如申請專利範圍第13項所述之製備方法,其中該導光透 鏡爲中心對稱之旋轉體,該頂面爲漏斗形。 1δ·如申請專利範圍第17項所述之製備方法,其中該銘聚漆 塗層覆蓋於該頂面並充滿該整個頂面所形成之凹槽。 19.=申請專利範圍第17項所述之製備方法,其中該紹裝漆 塗層覆蓋於該頂面並形成與該頂面相對應之漏斗形凹槽。 16200816516 X. Patent Application No. 1. A light emitting diode comprising a semiconductor light emitting element and a light guiding lens, the light guiding lens comprising a light incident surface opposite to the semiconductor light emitting element, and a light incident surface The top surface and a light-emitting surface on the outer side of the light guiding lens are improved in that the light-emitting diode further comprises an aluminum paint coating layer formed on the top surface, the aluminum paint coating layer comprises a transparent resin substrate And a plurality of scales dispersed on the transparent resin substrate. 2. The light-emitting diode according to claim 1, wherein the light guiding lens further comprises an annular protrusion extending upward from the top surface edge for preventing the aluminum The lacquer overflows during the coating process. 3. The light-emitting diode according to claim i, wherein the light guide lens is a centrally symmetrical rotating body, and the top surface is funnel-shaped. 4. The illuminating diode of claim 3, wherein the lacquer coating covers the top surface and fills the recess formed by the entire top surface. 5. The light-emitting diode of claim 3, wherein the paste coating covers the top surface and forms a funnel-shaped recess corresponding to the top surface. A method for fabricating a light-emitting diode includes the steps of: providing a light guiding lens and a semiconductor light emitting element, the light guiding lens comprising a light incident surface, a top surface opposite to the light incident surface, and a a light-emitting surface outside the light guiding lens; coating the two to form the aluminum lacquer layer; and forming an aluminum varnish on the top surface of the light guiding lens 14 200816516 will be formed with Shao lacquer, shed The stop lens and the semiconductor light emitting element are assembled into a light emitting diode. The method for preparing a method according to the invention, wherein the light guiding lens further comprises an annular protrusion extending upward from the edge of the top surface to prevent the paint from being applied. Overflow during the finishing process. 8. The method of claim 6, wherein after applying the top surface of the illuminating lens, the method further comprises: using a jig to adjust the thickness of the lacquer on the top surface, wherein The fixture includes a shaped portion that cooperates with a top surface shape of the light guiding lens. 9. The preparation method of claim 6, wherein the curing step is one of heat curing and photo curing. 10. The preparation method according to claim 6, wherein the light guiding lens is a centrally symmetrical rotating body, and the top surface is funnel shaped. η. The method of preparation of claim 1 , wherein the lacquer coating covers the top surface and fills the recess formed by the entire top surface. 12. The method of preparation of claim 1, wherein the lacquer coating covers the top surface and forms a funnel-shaped recess corresponding to the top surface. 13. A method of fabricating a light-emitting diode, comprising the steps of: (iii) providing a light guiding lens and a semiconductor light emitting element, the light guiding lens comprising: a light incident surface, a top surface opposite to the light incident surface, And a light-emitting surface located outside the light guiding lens; the light guiding lens and the semiconductor component are assembled together; the transparent resin is mixed with the aluminum scale to be configured as an aluminum paint; and the paste is coated on the light guiding lens Top surface; and 15 200816516 The lacquer is cured to form a paste coating on the top surface of the light guiding lens. 14. The preparation method of claim 13, wherein the light guiding lens further comprises a dome-shaped protrusion extending upward from the top edge of the top surface for preventing the The aluminum paste overflows during the coating process. 15. The preparation method of claim 13, wherein after coating the top coat on the top surface of the light guiding lens, the method further comprises: adjusting the top coat to the top surface by using a jig The thickness, wherein the fixture comprises a shaped portion that cooperates with a top surface shape of the light guiding lens. 16. The preparation method according to claim 13, wherein the curing step is one of heat curing and photo curing. The preparation method according to claim 13, wherein the light guiding lens is a centrally symmetrical rotating body, and the top surface is funnel shaped. 1 δ. The preparation method of claim 17, wherein the lacquer coating covers the top surface and fills the groove formed by the entire top surface. 19. The method of preparation of claim 17, wherein the lacquer coating covers the top surface and forms a funnel-shaped recess corresponding to the top surface. 16
TW95136383A 2006-09-29 2006-09-29 Light emitting diode and method for making the same TWI311382B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95136383A TWI311382B (en) 2006-09-29 2006-09-29 Light emitting diode and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95136383A TWI311382B (en) 2006-09-29 2006-09-29 Light emitting diode and method for making the same

Publications (2)

Publication Number Publication Date
TW200816516A true TW200816516A (en) 2008-04-01
TWI311382B TWI311382B (en) 2009-06-21

Family

ID=44769115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95136383A TWI311382B (en) 2006-09-29 2006-09-29 Light emitting diode and method for making the same

Country Status (1)

Country Link
TW (1) TWI311382B (en)

Also Published As

Publication number Publication date
TWI311382B (en) 2009-06-21

Similar Documents

Publication Publication Date Title
CN1259732C (en) Optical device for optical element and equipment using the same
TWI493257B (en) Lighting device and liquid crystal display using the same
JP5598974B2 (en) Lighting device
KR20170135689A (en) Light emitting device and method for manufacturing the same
TW201033538A (en) LED with molded bi-directional optics
CN101145593A (en) Light emitting diode and its manufacturing method
TWI671574B (en) Light source module and display appartus
US20200233141A1 (en) Light source module and display device
WO2007108663A1 (en) Lentille de fresnel et del l'utilisant
EP2764292B1 (en) Lighting module
CN109814189B (en) Optical device and light source module including the same
JP2009193995A (en) Led light source and chromaticity adjustment method thereof
KR20120127077A (en) Color converting device and method for manufacturing the same
TWI515392B (en) Optical plate and illuminating member using the same
KR101641205B1 (en) The manufacturing method for LED light module contained adjustable Emitting angle
CN101150158A (en) LED and its making method
TW201425814A (en) LED module and method of manufacturing the same
JP2015523710A (en) Method for producing an optical module having a polymer optical system, optical module and use thereof
TW200816516A (en) Light emitting diode and method for making the same
WO2012139644A1 (en) Method for manufacturing a phosphor device and lighting apparatus comprising such phosphor device
KR101368852B1 (en) Illuminating device
WO2018180658A1 (en) Wavelength conversion element and light emitting device
TW200816513A (en) Light emitting diode and method for manufacturing the same
CN210568135U (en) LED light-emitting device for replacing halogen bulb
TW201514423A (en) Side view backlight module

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees