200815904 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種光學投影機° 【先前技術】 文件U S 5 6 3 3 7 5 5描述一種光學投影機。 【發明內容】 本發明之目的是另外提供一種光學投影機，其中可特別 有效地使用該投影機中之光源的光。 依據該光學投影機之至少一實施形式’該光學投影機包 括一光源，其包含至少二個發光二極體晶片。該光源較佳 是包括多個發光二極體晶片，例如，四個以上。因此，該 光學投影機可包括二個以上之光源。 該光學投影機之光源具有一發光面。該光源之發光面是 藉由該光源操作時流有電流的發光二極體晶片之輻射發射 面和各流有電流的發光二極體晶片之輻射發> 面之間的距 離來形成。 即，該發光面是由光源之發光二極體之多個面（經由這些 面可使該光源操作時的電磁輻射離開該發光二極體晶片） 以及該發光二極體晶片之各輻射發射面之間的面（其例如 藉由各發光二極體晶片相互之間的距離所形成）所組成。於 是，該光源之多個發光二極體晶片亦可劃分成多個群組， 其中該發光二極體晶片之每一群組都設有一主透鏡。 在該光源操作時由發光二極體晶片所發出的電磁輻射 可由主透鏡來引導’使發光二極體晶片之各群組之間的光 200815904 學距離可有效地等於零，當各群組的發光二極體之發 極體晶片之間的實際距離較大時亦如此。即，各主透 合用來使由各群組所發出的輻射相聚合，以使相聚合 磁輻射就像來自唯一的發光面一樣而顯示出來，此唯 發光面是由二個群組之發光面以無距離的方式所組成 光源的發光面較佳是具有長方形的形式，即，發光 括一種長度和一種寬度。發光面顯示一種第一邊長比 由該發光面的長度和寬度之比所形成。 依據上述光學投影機之至少一實施形式，該光學投 用來顯示一種圖像。此圖像較佳是具有長方形的形式 示出一種長度和一種寬度。例如，該圖像由光學投影 影至一投影面上。該圖像顯示一種第二邊長比，其由 像的長度相對於寬度之比所形成。 依據上述光學投影機之至少一實施形式，該第一和 邊長比（即，該光源之發光面之邊長比和由該投影機所 的圖像之邊長比）可互相調整。所謂”互相調整”較佳是 第一和第二邊長比大約相等。 依據上述光學投影機之至少一實施形式，該光學投 具有一光源，其包括至少二個發光二極體晶片，其中 源具有一發光面，該發光面由該光源操作時流有電流 光二極體晶片之輻射發射面和各流有電流的發光二極 片之輻射發射面之間的光學距離來組成，且該發光面 出一種由發光面之長度相對於寬度之比所形成的第一 比。該光學投影機是用來顯示一種圖像，其具有一種 光二 鏡適 的電 一的 〇 面包 ，其 影機 且顯 機投 該圖 第二 顯示 :指， 影機 該光 的發 體晶 顯示 邊長 :由圖 200815904 像之長度相對於寬度之比所形成的第二邊長比。第一和第 二邊長比可互相調整。 依據上述光學投影機之至少一實施形式，另一方式是該 光源恰巧只包含一發光二極體晶片，此處該光源具有一發 光面，其由該一發光二極體晶片之輻射發射面所形成且該 發光面具有一種由該發光面之長度相對於寬度之比所形成 的第一邊長比，此時該光學投影機是用來顯示一種圖像， 其具有一種由該圖像之長度相對於該圖像的寬度之比所形 成的第二邊長比，且第一和第二邊長比可互相調整。 依據上述光學投影機之至少一實施形式，第一邊長比大 致上等於第二邊長比。”大致上等於”之意義例如是指，第 一邊長比與第一邊長比之差最多是2.5%，較佳是1.5%，特 別佳時是0.5%。此外，”大致上等於”之意義例如是指，在 該光源之製程容許度之範圍內，即，在該光源之發光二極 體晶片之製程容許度和各發光二極體晶片相互之間的調整 準確度之範圍內，第一邊長比等於第二邊長比。 依據上述光學投影機之至少一實施形式，第二邊長比， 即，已投射的圖像的邊長比是1 6 : 9。第一邊長比，即， 光源的發光面的邊長比，較佳是大約等於16: 9。 依據上述光學投影機之至少一實施形式，第二邊長比， 即，已投射的圖像的邊長比是3 ·· 2。第一邊長比，即，光 源的發光面的邊長比，較佳是亦大約等於3 : 2。 依據上述光學投影機之至少一實施形式，該光學投影機 具有一種由微鏡所形成的陣列。此陣列的微鏡一起形成一 200815904 種數位鏡面裝置（DMD)。微鏡所形成的此陣列在光學投影 機中是一種光調變器。微鏡所形成的此陣列較佳是受到該 光學投影機之光源之儘可能均勻的照明且將該光源之光之 至少一部份反射至投影面。 微鏡所形成的此陣列具有一種鏡面，其由此陣列的微鏡 之多個鏡面所組成。 微鏡所形成的此陣列之鏡面較佳是長方形者且此鏡面 具有一種長度和寬度。此鏡面具有一種第三邊長比，其由 • 鏡面之長度相對於寬度之比所形成。 第三邊長比和上述之第一邊長比較佳是可互相調整。 即，第三邊長比例如大致上等於第一邊長比。”大致上等於” 之意義例如是指，第三邊長比與第一邊長比之差最多是 2.5 %，較佳是1 . 5 %，特別佳時是0.5 %。此外，”大致上等 於”之意義例如是指，在該光源之製程容許度之範圍內和各 發光二極體晶片相互之間的調整準確度之範圍內，第一邊 長比等於第三邊長比。 ^ 依據上述光學投影機之至少一實施形式，微鏡所形成的 該陣列之至少一微鏡可圍繞一傾斜軸而傾斜。該陣列之每 一微鏡較佳是可圍繞一傾斜軸而傾斜。微鏡可在二個方向 中以一傾斜角圍繞該傾斜軸而傾斜。若該傾斜角是α，則微 鏡可以角度-α和+α以圍繞該傾斜軸而傾斜。該陣列的每一 微鏡較佳是可在二個方向中以該傾斜角圍繞該傾斜軸而傾 斜0 依據上述光學投影機之至少一實施形式，該光源之發光 200815904 面和該陣列之鏡面之間適合以下的關係：該 L 1較佳是大致上等於該鏡面之長度L3乘以 之傾斜角α之正弦値。該發光面的寬度B1較 於該鏡面之寬度Β3乘以該陣列之微鏡之傾 値。 即，理想情況下適合以下的關係式： L 1 =L3 * sin(a) B 1 =B 3 * sin(a) ® 此處所描述的光學投影機另外使用以下的 光源的發光面須依據微鏡所形成的陣列之鏡 該發光面對應於該陣列的光學幾何面。 依據上述光學投影機之至少一實施形式， 一發光二極體晶片具有一種長方形之輻射發 方形之輻射發射面。即，該發光二極體晶片 之長度較佳是不等於輻射發射面之寬度。藉 之形式的調整，則可特別良好地使該發光面 ^ 該圖像之邊長比及/或該陣列的鏡面之邊長tt 光源之每一發光二極體晶片較佳是具有一種 發射面，而非正方形之輻射發射面。 此處所描述的發光二極體晶片亦與光學 而具有優點且因此亦可與光學投影裝置相組 影裝置的型式無關。 依據上述光學投影機之至少一實施形式， 一發光二極體晶片具有一第一主面。此第一 發光面之長度 該陣列之微鏡 佳是大致上等 丨斜角a之正弦 槪念，即，該 面來調整，使 該光源之至少 射面，而非正 之輻射發射面 由輻射發射面 之邊長比來對 i進行調整。該 長方形的輻射 投影裝置無關 合而與光學投 該光源之至少 主面包括該發 • 1 0 - 200815904 光二極體晶片之輻射發射面和一非發射面，該發光二極體 .晶片在操作時電磁輻射未經由該非發射面而發出。第一主 面較佳是恰巧由上述二個面所組成。這對該光源之全部的 發光二極體晶片都一樣。例如，在該發光二極體晶片中在 該非發射面之區域中未產生電磁輻射。這例如可藉由下述 方式來達成，即，在該發光二極體晶片之產生輻射的活性 區之相對應的區域中未產生電磁輻射。此外，該發光二極 體晶片之輻射發射面亦可形成在該非發射面之區域中且不 • 能使輻射透過。 該非發射面較佳是包括該發光二極體晶片之一接觸位 置，經由此一接觸位置可在電性上接觸該發光二極體晶 片。例如，該接觸位置可以是一種接合墊。此外，該非發 射湎亦可由該接觸位置所形成。 依據上述光學投影機之至少一實施形式，至少在該光源 之一發光二極體晶片中該非發射面是經由第一主面之整個 寬度而延伸。該非發射面例如形成一種條片，其寬度小於 — 該發光二極體晶片之第一主面的長度。該條片經由該發光 二極體晶片之第一主面之整個寬度而延伸。該非發射面因 此可包含該發光二極體晶片之一接觸位置或由該接觸位置 所形成。 依據上述光學投影機之至少一實施形式，至少在該光源 之一發光二極體晶片中該非發射面是經由第一主面之整個 長度而延伸。該非發射面例如形成一種條片，其寬度小於 該發光二極體晶片之第一主面的寬度。該條片經由該發光 -11- 200815904 二極體晶片之第一主面之整個長度而延伸。該非發射面因 此可包含該發光二極體晶片之一接觸位置或由該接觸位置 所形成 依據上述光學投影機之至少一實施形式，該光源之至少 一發光二極體晶片是薄膜發光二極體晶片。該光源之每一 發光二極體晶片較佳是一種薄膜發光二極體晶片。 即，各發光二極體晶片包含一種磊晶生長的層序列，其 中一種生長基板已薄化或已完全去除。磊晶生長的層以其 ® 遠離原來的生長基板之該表面施加至一載體上或直接施加 在一電路板上。以薄膜方式構成的光電半導體晶片例如已 描述在文件WO 02/13281或EP 0905797中，其已揭示的有 關光電半導體晶片之薄膜構造方式的內容藉由參考而收納 於此處。薄膜發光二極體晶片很類似於一種藍伯 (Lambertian)表面輻射器且因此特別適合用於光學投影機 中。 依據上述光學投影機之至少一實施形式，該光學投影機 m — 包括一控制裝置。此控制裝置適合用來調整該第一邊長 比，即，該光源之發光面之邊長比。於此，該控制裝置較 佳是適合用來對該光源操作時流有電流的發光二極體晶片 之數目進行調整。例如，在該光學投影裝置之第一操作狀 態中，該光源之全部的發光二極體晶片都流有電流。由發 光二極體晶片之輻射發射面和各發光二極體晶片之間的光 學距離所組成的發光面可具有一種例如1 6 : 9之邊長比。 在該光學投影裝置之可由該控制裝置來調整的第二操作狀 -12- 200815904 態中，該發光二極體晶片之一小部份有電流流過， 面變小。此發光面於是具有另一種邊長比，例如， 以此種方式，則第一邊長比可依據第二邊長比來調; 本發明上述之光學投影裝置以下將依據各實施 關的圖式來詳述。 【實施方式】 各圖式和實施例中相同或作用相同的各組件分 相同的參考符號。所示的各元件和各元件之間的比 ® 依比例繪出。反之，爲了清楚之故有些元件的一些 予放大地顯示出。 第1圖顯示本發明第一實施例之光學投影裝置 圖。 此光學投影裝置10包括一光源1、一由微鏡3所 陣列以及一控制裝置5，其用來控制該光源1。 此光學投影裝置1 0藉由微鏡3所形成的該陣列 光源1所發出的光投射至一投影面（未圖示），以形 W 圖像200。此圖像200具有一種長度L2和一種寬虔 第2圖顯示微鏡3所形成的陣列之透視圖，其可 此處所述之光學投影裝置之一實施例中 微鏡3所形成的陣列包括多個微鏡3 1。這些微i 起形成一種所謂數位鏡面裝置（DMD)。此種DMD例 述在US 5,63 3,7 5 5和US 6,323,982中，其已揭示 DMD之構造和功能的內容藉由參考而收納於此處。 微鏡3所形成的陣列在此光學投影裝置1 〇中是 使發光 3:2° 整。 例和相 別設有 例未必 細節已 之透視 形成的 而將該 成一種 [B2 〇 應用在 竟3 1 — 丨如已描 :的有關 :一種光 -13- 200815904 調變器。該光源1較佳是均勻地對此陣列3進行照明。此 陣列3對入射的光進行調變，此時每一微鏡3 1使入射至其 上的光選擇性地由該投影機1 0中發出而偏向至一投影面 上，或使該光進入至該投影機中而偏向至一吸收器上。該 陣列3之每一微鏡3 1於是具有一種正方形或長方形之鏡表 面。微鏡31之鏡表面之面積較佳是介於12和25平方μιη 之間。陣列3含有數十萬至數百萬個微鏡3 1。微鏡3 1之 鏡表面共同形成由微鏡3所形成的該陣列之鏡面3 3。此鏡 面33具有寬度Β3和長度L3。每個微鏡形成該已投射的圖 像之一個畫素（像素）。 每一微鏡31可在二個方向中圍繞一軸30而傾斜，該軸 作爲微鏡3 1之中軸以經由該微鏡3 1而延伸。微鏡3 1可在 二個方向中以一傾斜角α來圍繞所屬的傾斜軸3 0而傾斜。 即，微鏡31可以角度+α和來圍繞該傾斜軸30而傾斜。 典型的傾斜角例如α等於12度，α等於14度或α等於23.6 度。 第3圖顯示此處所述之光學投影裝置之一實施例用的一 光源1的俯視圖。光源1包括一種由2 X 4個發光二極體晶 片20所形成的陣列。每一發光二極體晶片20具有一第一 主面2 1。第一主面2 1包括一輻射發射面2和一非發射面3。 發光二極體晶片20之輻射發射面2較佳是長方形而不 是正方形的形式。該輻射發射面2具有寬度Β4和長度L4。 該非發射面3如第3圖之實施例所示是以接觸位置4來 構成。此接觸位置4 1例如形成一種接合墊以與發光二極體 -14- 200815904 晶片2 0形成一種接觸作用。該非發射面3經由第一主面 21之整個長度而延伸。該非發射面3以條片的形式而配置 在第一主面21之邊緣上。該發光二極體晶片20之接觸位 置4因此由光學活性晶片表面（即，該發光二極體晶片2 0 之輻射發射面2)伸出。該接觸位置4之寬度較佳是小於 25 0μιη，特別佳時是小於150μπι，例如，小於138μπι。 在第3圖之實施例中，該非發射面3是由該接觸位置4 所形成。即，該接觸位置4形成一種條片，其經由該發光 ^ 二極體晶片20之第一主面之整個寬度而延伸。 該光源1劃分成兩個群組201和202。每一群組被附屬 於各別的主透鏡（未圖示）。由各群組201，202之發光二極 體晶片20所發出的光由所屬的主透鏡來引導，使各群組 201和202形成一發光面，其顯示出該兩個群組2 01和202 之配置在邊緣側且互相面對的發光二極體晶片20相互之 間是否具有零距離。 另一方式是，該光源1之發光二極體晶片20亦可未劃 — 分成不同的群組。輻射發射面2和各別的發光二極體晶片 20之間的距離D 1、D2須設定一種尺寸，以形成該光源1 之一發光面22，其具有所期望的長度L1和所期望的寬度 Β1 〇 一個群組之各發光二極體晶片20在水平方向中相互之 間具有一種距離D 1。一群組之各發光二極體晶片2 0在垂 直方向中相互之間具有一種距離D2。該光源1之發光面 2 2是由輻射發射面2和各別的發光二極體晶片2 0之間的 -15- 200815904 距離D1、D2所組成。 該發光面22具有一種寬度B1，其在第3圖之實施例中 等於該輻射發射面之寬度B4的二倍加上該發光二極體晶 片20在垂直方向中相互間之距離D2。該光源1之發光面 22具有一種長度L1，其在第3圖之實施例中等於該輻射發 射面之長度L4的四倍加上各發光二極體晶片20在水平方 向中相互間之距離D 1的二倍。 例如，該光學投影機具有一種由微鏡3所形成的陣列， 其具有一種鏡面33，其長度L3是18.68mm且其寬度B3 是1 0.5 1 mm。該鏡面因此具有一種L3對B 3之邊長比，其 大約是1 6比9。此例子中，該傾斜角α等於1 2度。 該光源1之發光面22較佳是可依據微鏡3所形成的該 陣列之鏡面33來調整，使發光面之長度1^1=[3*以11(〇〇大約 是3.88111111。該發光面之寬度81=83*3丨11(〇；)較佳是大約等於 2.19mm。具有此種尺寸之發光面的光源具有一種發光面， 其對應於微鏡3所形成之陣列的鏡面3 3之光學幾何面。此 種尺寸例如可藉由選取各距離Dl、D2使等於0.075mm， 輻射發射面2之長度L4等於0.93 3mm且寬度B4等於 1.0 5 7mm來達成。該發光面之邊長比（L1相對於B1)因此大 約是16比9。 與此相比較下，就具有2x4個發光二極體晶片之光源而 言，可使該發光面22之長度L1是4.3mm且寬度B1是 2.1mm，各發光二極體晶片之輻射發射面2之寬度B4分別 是1mm且輻射發射面2之長度L4是1mm，且各發光二極 •200815904 體晶片之間的距離D 1、D 2是0 · 1 mm。就此種光源而言， 沿著第一軸的方向中該光源1之發光面只有90%使用在鏡 面33上。在垂直於第一軸的第二軸之方向中少5%。 第4圖顯示此處所述之光學投影裝置之另一實施例用的 一光源的俯視圖。相較於第3圖所示的實施例而言，發光 二極體晶片20之非發射面3具有一接觸位置4,其未經由 該發光二極體晶片20之整個長度而延伸。該接觸位置4所 具有的範圍因此小於該非發射面3之範圍。該光源1是由 ® 2x6個發光二極體.晶片20所構成之陣列所形成。各發光二 極體晶片20劃分成二群組201和202，其相互之間具有一 種零距離。 在另一實施例中，該光學投影機具有一種由微鏡3所構 成的陣列，其具有鏡面3 3，鏡面3 3之長度L3是1 1 · 1 4mm 且寬度B3是7.43mm。此鏡面因此具有一種L3對B3之邊 長比’其大約是3比2。本例子中，該傾斜角α是2 3.6度。 該光源1之發光面22較佳是可依據微鏡3所構成的該 ^ 陣列之鏡面33來調整，使發光面之長度是 Ll=L3*sin(a) = 4.46 mm 發光面之寬度B1較佳是 Bl=B3*sin(a) = 2.97 mm 具有上述尺寸之發光面的一種光源具有一發光面，其對 應於微鏡3所構成的陣列之鏡面3 3之光學幾何面。此種尺 寸例如可藉由發光二極體晶片20之下述配置方式來達成： 兩個群組各別具有3列x2行之發光二極體晶片20，其 -17- 200815904 中： D1 =02 = 0.075 mm B4 = 0.9 4 mm L4 = 1.0775 mm 兩個群組各別具有2列x2行之發光二極體晶片20，其 中： D1=D2 = 0.075 mm B4=1.447 mm • L4 = 1.0775 mm 六個各別的發光二極體晶片20配置成2列x 3行之形 式，其中每一發光二極體晶片20之後配置一個主透鏡，使 各發光二極體晶片20之間的光學距離等於零，其中： B 4 = 1.4 8 5 mm L4=1.486 mm 第5圖顯示此處所述之光學投影裝置之另一實施例用的 一光源1和一控制裝置5的俯視圖。此控制裝置5較佳是 ® ,用來在該光源操作時對該光源之全部的發光二極體晶片20 一起進行控制和操作。此外，該控制裝置5在該光源1操 作時只用來驅動各發光二極體晶片20之一部份。在此種情 況下，該控制裝置5例如只使該群組203之八個發光二極 體晶片20流有電流。該群組204之四個發光二極體晶片 20保持著無電流的狀態。以此種方式，則可藉由該控制裝 置來使該光源1之發光面22之尺寸減小。因此’可在第一 邊長比L1對B 1等於1 6比9以及第二邊長比L1對B 1等 -18- 200815904 於3比2之間轉換。 爲了將該光源1之發光二極體晶片20與該控制裝置5 相連接，則發光二極體晶片20和該控制裝置5例如可施加 在一種共用的終端載體5 0上。此終端載體5 0例如以具有 傳導路徑之金屬核心電路板來構成，其將該控制裝置5與 發光二極體晶片20相連接。 第6圖顯示沿著第5圖所示的光學投影裝置之線A-A ’ 所形成的切面圖。 • 發光二極體晶片20之每一群組201和202之後配置一 個主透鏡400。主透鏡400之輻射發射面401互相聚合， 使各群組201、202之間的光學距離成爲零。 主透鏡400至少依據位置而由下述之光學基本元件所形 成：組合式拋物面聚光器（CPC- Compound Parabolic Concentrator)，組合式橢圓面聚光器（CEC- Compound Elliptic Concentrator)，組合式雙曲面聚光器（CHC-Compound Hyperbolic Concentrator)。主透鏡 400 之側面 ^ 402至少依據位置而由上述之光學基本元件所形成。 此外，該主透鏡400至少依據位置而以截錐體或平截頭 稜錐體之形式來形成，其朝向光源而變細。 以上的各種形式中，主透鏡400可以實心體來形成。在 此種情況下，電磁輻射之至少一部份藉由在該側面402上 的全反射而傳送至該主透鏡4 00中。此外，該實心體之表 面至少依據位置而塗佈一種反射材料。 又，該主透鏡400亦可以中空體來形成，其內面具有反 200815904 射性。例如，該主透鏡400之內面可塗佈一種具有反射性 的金屬。 本發明當然不限於依據各實施例中所作的描述。反之， 本發明包含每一新的特徵和各特徵的每一種組合，特別是 包含各申請專利範圍或不同實施例之各別特徵之每一種組 合’當相關的特徵或相關的組合本身未明顯地顯示在各申 請專利範圍中或各實施例中時亦同。 本專利申請案主張德國專利申請案 1 0 2006 045 440.5 ^ 之優先權，其已揭示的整個內容在此一倂作爲參考。 【圖式簡單說明】 第1圖 本發明第一實施例之光學投影裝置之透視 圖。 第2圖 微鏡3所形成的陣列之透視圖，其可應用在 此處所述之光學投影裝置之一實施例中。 第3圖 此處所述之光學投影裝置之一實施例用的一 光源1的俯視圖。 ® 第4圖 此處所述之光學投影裝置之另一實施例用的 一光源的俯視圖。 第5圖 此處所述之光學投影裝置之另一實施例用的 一光源1和一控制裝置5的俯視圖。 第6圖 沿著第5圖所示的光學投影裝置之線A-A’所 形成的切面圖。 【主要元件符號說明】 1 光源 -20- 200815904 2 輻射發射面 3 非發射面 4 接觸位置 5 控制裝置 2 0 發光二極體晶片 2 1 第一主面 22 發光面 3 1 微鏡 33 鏡面 200 圖像 201 、 202 群組 B 1 〜B4 寬度 LI 〜L4 長度 D1、D2 光學距離 -2 1 -200815904 IX. Description of the Invention: [Technical Field] The present invention relates to an optical projector. [Prior Art] Document U S 5 6 3 3 7 5 5 describes an optical projector. SUMMARY OF THE INVENTION It is an object of the present invention to additionally provide an optical projector in which light of a light source in the projector can be used particularly effectively. According to at least one embodiment of the optical projector, the optical projector comprises a light source comprising at least two light emitting diode wafers. The light source preferably includes a plurality of light emitting diode chips, for example, four or more. Therefore, the optical projector can include more than two light sources. The light source of the optical projector has a light emitting surface. The light-emitting surface of the light source is formed by the distance between the radiation emitting surface of the light-emitting diode chip in which the current flows while the light source is operating and the radiation emitting surface of the light-emitting diode wafer in which the current flows. That is, the light emitting surface is a plurality of surfaces of the light emitting diode of the light source (the electromagnetic radiation when the light source is operated to leave the light emitting diode wafer via the surfaces) and the radiation emitting surfaces of the light emitting diode chip The faces between them (which are formed, for example, by the distance between the respective light-emitting diode wafers). Therefore, the plurality of light emitting diode chips of the light source may also be divided into a plurality of groups, wherein each group of the light emitting diode chips is provided with a main lens. The electromagnetic radiation emitted by the light-emitting diode wafer during operation of the light source can be guided by the main lens 'so that the distance between the groups of light-emitting diode chips 200815904 can effectively be equal to zero, when the groups emit light The same is true when the actual distance between the emitter and body wafers of the diode is large. That is, each main transmissive is used to polymerize the radiation emitted by each group so that the phase-polymerized magnetic radiation is displayed as if it were from a single light-emitting surface, which is composed of two groups of light-emitting surfaces. The light-emitting surface of the light source which is formed in a distance-free manner preferably has a rectangular form, that is, the light-emitting includes a length and a width. The illuminating surface exhibits a first side length ratio formed by the ratio of the length to the width of the illuminating surface. According to at least one embodiment of the optical projector described above, the optical projection displays an image. The image preferably has a rectangular form showing a length and a width. For example, the image is optically projected onto a projection surface. The image shows a second side length ratio formed by the ratio of the length of the image to the width. According to at least one embodiment of the optical projector described above, the first side to side ratio (i.e., the side length ratio of the light emitting surface of the light source and the side length ratio of the image of the projector) can be adjusted to each other. The so-called "mutual adjustment" is preferably such that the first and second side length ratios are approximately equal. In accordance with at least one embodiment of the optical projector described above, the optical projection has a light source including at least two light emitting diode wafers, wherein the source has a light emitting surface, and the light emitting surface is operated by the light source to flow a current photodiode wafer The radiation emitting surface is formed by an optical distance between the radiation emitting surface of each of the current-emitting diodes, and the light-emitting surface has a first ratio formed by the ratio of the length of the light-emitting surface to the width. The optical projector is used for displaying an image, which has a light-mirror-shaped electric one-shaped bread, and the camera and the display machine cast the second display of the figure: that the light-emitting crystal display side of the light of the camera Length: The ratio of the second side length formed by the ratio of the length of the image to the width of Fig. 200815904. The first and second side length ratios can be adjusted to each other. According to at least one embodiment of the above optical projector, the light source happens to include only one light emitting diode chip, wherein the light source has a light emitting surface, and the radiation emitting surface of the light emitting diode chip is Forming and having a light emitting surface having a first side length ratio formed by a ratio of a length of the light emitting surface to a width, wherein the optical projector is used to display an image having a length from the image The second side length ratio formed by the ratio of the widths of the images, and the first and second side length ratios are mutually adjustable. According to at least one embodiment of the optical projector described above, the first side length ratio is substantially equal to the second side length ratio. The meaning of "substantially equal" means, for example, that the difference between the first side length ratio and the first side length ratio is at most 2.5%, preferably 1.5%, and particularly preferably 0.5%. In addition, the meaning of "substantially equal" means, for example, within the range of the process tolerance of the light source, that is, the process tolerance of the light-emitting diode chip of the light source and the mutual light-emitting diode wafers. Within the range of adjustment accuracy, the first side length ratio is equal to the second side length ratio. According to at least one embodiment of the optical projector described above, the second side length ratio, that is, the side length ratio of the projected image is 1 6:9. The first side length ratio, that is, the side length ratio of the light emitting surface of the light source is preferably approximately equal to 16:9. According to at least one embodiment of the optical projector described above, the second side length ratio, that is, the side length ratio of the projected image is 3··2. The first side length ratio, i.e., the side length ratio of the light emitting surface of the light source, is preferably also approximately equal to 3:2. According to at least one embodiment of the optical projector described above, the optical projector has an array formed by micromirrors. The micromirrors of this array together form a 200815904 digital mirror device (DMD). This array formed by a micromirror is a light modulator in an optical projector. Preferably, the array formed by the micromirror is illuminated as uniformly as possible by the source of the optical projector and reflects at least a portion of the light from the source to the projection surface. The array formed by the micromirrors has a mirror surface which is composed of a plurality of mirror faces of the micromirrors of the array. The mirror of the array formed by the micromirrors is preferably rectangular and has a length and width. The mirror has a third aspect ratio which is formed by the ratio of the length of the mirror to the width. The third side length ratio and the first side length described above are preferably mutually adjustable. That is, the third side length ratio is, for example, substantially equal to the first side length ratio. The meaning of "substantially equal" means, for example, that the difference between the third side length ratio and the first side length ratio is at most 2.5 %, preferably 1.5%, and particularly preferably 0.5%. In addition, the meaning of "substantially equal" means, for example, that the first side length ratio is equal to the third side within the range of the process tolerance of the light source and the adjustment accuracy of each of the light emitting diode wafers relative to each other. Longer than. ^ According to at least one embodiment of the optical projector described above, at least one of the micromirrors of the array formed by the micromirrors can be tilted about an oblique axis. Each of the micromirrors of the array is preferably tiltable about an oblique axis. The micromirror can be tilted about the tilt axis at an oblique angle in two directions. If the tilt angle is α, the micromirrors can be tilted around the tilt axis by angles -α and +α. Preferably, each micromirror of the array is tiltable about the tilt axis in the two directions at the tilt angle. According to at least one embodiment of the optical projector, the light emitting light of the light source 200815904 and the mirror of the array The relationship is suitable for the following: the L 1 is preferably a sine 値 substantially equal to the length L3 of the mirror multiplied by the inclination angle α. The width B1 of the light-emitting surface is multiplied by the width 该3 of the mirror surface by the tilt of the micromirrors of the array. That is, it is ideally suitable for the following relationship: L 1 =L3 * sin(a) B 1 =B 3 * sin(a) ® The optical projector described here additionally uses the following light source to be illuminated according to the micromirror The mirror of the formed array has a light emitting surface corresponding to the optical geometry of the array. In accordance with at least one embodiment of the optical projector described above, a light-emitting diode wafer has a rectangular radiating square radiating surface. That is, the length of the light-emitting diode wafer is preferably not equal to the width of the radiation emitting surface. By means of the adjustment of the form, the side length ratio of the light emitting surface and/or the side of the mirror surface of the array can be particularly well tt. Each of the light emitting diode chips of the light source preferably has an emitting surface. , rather than the radiating surface of the square. The light-emitting diode wafers described herein are also optically advantageous and therefore can also be independent of the type of optical projection device. In accordance with at least one embodiment of the optical projector described above, a light emitting diode wafer has a first major surface. The length of the first illuminating surface is preferably a sinusoidal sinus of a substantially equal slant angle a, that is, the surface is adjusted such that at least the emitting surface of the light source, rather than the positive radiation emitting surface, is emitted by the radiation The side length of the face is adjusted to i. The rectangular radiation projection device is incompatible with the optical projection. The at least one main surface of the light source includes a radiation emitting surface and a non-emitting surface of the photodiode wafer, and the LED is in operation. Electromagnetic radiation is not emitted via the non-emissive surface. Preferably, the first major surface is composed of the two faces described above. This is the same for all of the light-emitting diode wafers of the source. For example, no electromagnetic radiation is generated in the region of the non-emitting surface in the light-emitting diode wafer. This can be achieved, for example, by the fact that no electromagnetic radiation is generated in the corresponding region of the radiation-generating active region of the light-emitting diode wafer. In addition, the radiation emitting surface of the light emitting diode chip may also be formed in the region of the non-emitting surface and may not transmit radiation. The non-emissive surface preferably includes a contact position of the light-emitting diode wafer via which the light-emitting diode wafer can be electrically contacted. For example, the contact location can be a bond pad. Furthermore, the non-emitting pupil can also be formed by the contact location. In accordance with at least one embodiment of the optical projector described above, the non-emissive surface extends through at least the entire width of the first major surface in at least one of the light-emitting diode wafers of the light source. The non-emissive surface, for example, forms a strip having a width less than - the length of the first major face of the light emitting diode chip. The strip extends through the entire width of the first major face of the light emitting diode chip. The non-emissive surface may thus comprise or be formed by one of the contact locations of the light-emitting diode wafer. In accordance with at least one embodiment of the optical projector described above, the non-emitting surface extends through the entire length of the first major surface, at least in one of the light-emitting diode wafers of the light source. The non-emissive surface, for example, forms a strip having a width that is less than the width of the first major face of the light emitting diode chip. The strip extends through the entire length of the first major face of the illuminating -11-200815904 diode wafer. The non-emissive surface of the light-emitting diode wafer is a thin film light-emitting diode according to at least one embodiment of the optical projector. Wafer. Each of the light emitting diode chips of the light source is preferably a thin film light emitting diode chip. That is, each of the light-emitting diode wafers contains an epitaxially grown layer sequence in which one of the growth substrates has been thinned or completely removed. The epitaxially grown layer is applied to a carrier by its surface remote from the original growth substrate or directly applied to a circuit board. The optoelectronic semiconductor wafers which are formed in the form of a film are described, for example, in the document WO 02/13281 or EP 0 905 797, the disclosure of which is hereby incorporated herein by reference in its entirety in its entirety in its entirety in its entirety in its entirety. Thin film light emitting diode wafers are very similar to a Lambertian surface radiator and are therefore particularly suitable for use in optical projectors. According to at least one embodiment of the optical projector described above, the optical projector m comprises a control device. The control device is adapted to adjust the first side length ratio, i.e., the side length ratio of the light emitting face of the light source. Here, the control device is preferably adapted to adjust the number of light-emitting diode chips that flow current when the light source is operated. For example, in the first operational state of the optical projection device, current is present in all of the light-emitting diode wafers of the source. The light-emitting surface composed of the radiation emitting surface of the light-emitting diode wafer and the optical distance between the respective light-emitting diode wafers may have a side length ratio of, for example, 1 6:9. In the second operation state of the optical projection device which can be adjusted by the control device, a small portion of the light-emitting diode chip has a current flowing therethrough, and the surface becomes small. The light emitting surface then has another side length ratio. For example, in this manner, the first side length ratio can be adjusted according to the second side length ratio. The optical projection device of the present invention will be based on the following embodiments. To elaborate. [Embodiment] Each component in the drawings or the embodiments having the same or the same functions is denoted by the same reference numerals. The ratios between the components shown and the components are shown in scale. On the contrary, some of the elements are shown enlarged for the sake of clarity. Fig. 1 is a view showing an optical projection apparatus of a first embodiment of the present invention. The optical projection device 10 includes a light source 1, an array of micromirrors 3, and a control device 5 for controlling the light source 1. The optical projection device 10 projects light emitted from the array light source 1 formed by the micromirror 3 onto a projection surface (not shown) to shape the image 200. This image 200 has a length L2 and a width 虔 Figure 2 shows a perspective view of an array formed by the micromirrors 3, which may comprise an array formed by the micromirrors 3 in one embodiment of the optical projection device described herein. A plurality of micromirrors 3 1 . These micro-forms form a so-called digital mirror device (DMD). Such a DMD is exemplified in U.S. Patent Nos. 5,63,357, and U.S. Patent No. 6,323,982, the disclosure of which is incorporated herein by reference. The array formed by the micromirrors 3 is illuminating 3:2° in this optical projection device 1 . The examples and the different examples are not necessarily formed by the perspective of the details. [B2 〇 is applied to the actual 3 1 - as already described: a light -13- 200815904 modulator. The light source 1 preferably illuminates the array 3 uniformly. The array 3 modulates the incident light, and each micromirror 3 1 selectively causes light incident thereon to be selectively emitted from the projector 10 to be biased to a projection surface, or to cause the light to enter. To the projector and biased to an absorber. Each of the micromirrors 3 1 of the array 3 then has a square or rectangular mirror surface. The area of the mirror surface of the micromirror 31 is preferably between 12 and 25 square μm. Array 3 contains hundreds of thousands to millions of micromirrors 31. The mirror surfaces of the micromirrors 3 1 collectively form the mirror face 3 of the array formed by the micromirrors 3. This mirror 33 has a width Β3 and a length L3. Each micromirror forms a pixel (pixel) of the projected image. Each of the micromirrors 31 can be tilted about an axis 30 in two directions as an axis of the micromirrors 3 1 to extend through the micromirrors 31. The micromirror 3 1 can be tilted around the associated tilting axis 30 at an oblique angle α in both directions. That is, the micromirror 31 can be tilted around the tilt axis 30 at an angle +α and. A typical tilt angle such as a is equal to 12 degrees, a is equal to 14 degrees, or a is equal to 23.6 degrees. Figure 3 shows a top view of a light source 1 for an embodiment of the optical projection device described herein. Light source 1 includes an array of 2 x 4 LED arrays 20. Each of the light emitting diode chips 20 has a first major surface 21. The first major surface 2 1 includes a radiation emitting surface 2 and a non-emitting surface 3. The radiation emitting surface 2 of the light emitting diode chip 20 is preferably in the form of a rectangle rather than a square. The radiation emitting surface 2 has a width Β4 and a length L4. The non-emission surface 3 is formed by the contact position 4 as shown in the embodiment of Fig. 3. This contact position 4 1 forms, for example, a bond pad to form a contact with the light-emitting diode -14-200815904 wafer 20. The non-emitting surface 3 extends through the entire length of the first major surface 21. The non-emitting surface 3 is arranged on the edge of the first main surface 21 in the form of a strip. The contact position 4 of the light-emitting diode wafer 20 thus protrudes from the surface of the optically active wafer (i.e., the radiation emitting surface 2 of the light-emitting diode wafer 20). The width of the contact position 4 is preferably less than 25 μm, particularly preferably less than 150 μm, for example, less than 138 μm. In the embodiment of Fig. 3, the non-emitting surface 3 is formed by the contact position 4. That is, the contact location 4 forms a strip that extends through the entire width of the first major face of the luminescent diode wafer 20. The light source 1 is divided into two groups 201 and 202. Each group is attached to a respective main lens (not shown). The light emitted by the LED array 20 of each of the groups 201, 202 is guided by the associated main lens such that each group 201 and 202 forms a light emitting surface that displays the two groups 2 01 and 202 The light-emitting diode chips 20 disposed on the edge side and facing each other have a zero distance from each other. Alternatively, the light-emitting diode chips 20 of the light source 1 may also be undivided into different groups. The distance D 1 , D2 between the radiation emitting surface 2 and the respective light emitting diode wafer 20 must be set to a size to form a light emitting surface 22 of the light source 1 having a desired length L1 and a desired width. Each of the light-emitting diode chips 20 of one group has a distance D 1 from each other in the horizontal direction. Each of the groups of light-emitting diode wafers 20 has a distance D2 from each other in the vertical direction. The light-emitting surface 22 of the light source 1 is composed of a distance D1, D2 between -15 - 200815904 between the radiation emitting surface 2 and the respective light-emitting diode wafers 20. The light-emitting surface 22 has a width B1 which, in the embodiment of Fig. 3, is equal to twice the width B4 of the radiation-emitting surface plus the distance D2 between the light-emitting diode sheets 20 in the vertical direction. The light-emitting surface 22 of the light source 1 has a length L1 which, in the embodiment of Fig. 3, is equal to four times the length L4 of the radiation-emitting surface plus the distance D 1 of each of the light-emitting diode wafers 20 in the horizontal direction. Doubled. For example, the optical projector has an array formed by a micromirror 3 having a mirror surface 33 having a length L3 of 18.68 mm and a width B3 of 1 0.5 1 mm. The mirror thus has a side to side ratio of L3 to B3 which is approximately 16 to 9. In this example, the tilt angle α is equal to 12 degrees. The light-emitting surface 22 of the light source 1 is preferably adjusted according to the mirror surface 33 of the array formed by the micromirror 3, so that the length of the light-emitting surface is 1^1=[3* to 11 (〇〇 is approximately 3.881111111. The light-emitting surface) The width 81 = 83 * 3 丨 11 (〇;) is preferably approximately 2.19 mm. A light source having a light-emitting surface of such size has a light-emitting surface corresponding to the mirror surface 3 of the array formed by the micro mirror 3. Optical geometry. Such a dimension can be achieved, for example, by selecting each distance D1, D2 to be equal to 0.075 mm, and the length L4 of the radiation emitting surface 2 is equal to 0.93 3 mm and the width B4 is equal to 1.0 5 7 mm. L1 is thus approximately 16 to 9 with respect to B1). In comparison with this, in the case of a light source having 2 x 4 light-emitting diode chips, the length L1 of the light-emitting surface 22 can be 4.3 mm and the width B1 is 2.1 mm. The width B4 of the radiation emitting surface 2 of each of the light emitting diode chips is 1 mm and the length L4 of the radiation emitting surface 2 is 1 mm, and the distances D 1 and D 2 between the respective light emitting diodes and the 200815904 body wafer are 0. 1 mm. For such a light source, only 90% of the light-emitting surface of the light source 1 in the direction along the first axis is used in the mirror On face 33. 5% less in the direction perpendicular to the second axis of the first axis. Figure 4 shows a top view of a light source for another embodiment of the optical projection device described herein. In the embodiment shown, the non-emissive surface 3 of the LED wafer 20 has a contact location 4 that does not extend through the entire length of the LED wafer 20. The contact location 4 has a range Therefore, it is smaller than the range of the non-emission surface 3. The light source 1 is formed by an array of 2 x 6 light-emitting diodes and wafers 20. Each of the light-emitting diode chips 20 is divided into two groups 201 and 202, which are mutually There is a zero distance between them. In another embodiment, the optical projector has an array of micromirrors 3 having a mirror surface 33, the length L3 of the mirror surface 3 is 1 1 · 14 mm and the width B3 is 7.43 mm. The mirror thus has a side length ratio of L3 to B3 which is approximately 3 to 2. In this example, the tilt angle α is 2 3.6 degrees. The light emitting surface 22 of the light source 1 is preferably micromirror. The mirror surface 33 of the array of 3 is adjusted so that the length of the light-emitting surface is L1=L3*sin(a) = The width B1 of the 4.46 mm light-emitting surface is preferably B1=B3*sin(a) = 2.97 mm. A light source having a light-emitting surface of the above-mentioned size has a light-emitting surface corresponding to the mirror surface 3 of the array of micromirrors 3 Optical geometry. Such a size can be achieved, for example, by the following arrangement of the LED substrate 20: two groups each having three columns x 2 rows of LED chips 20, -17-200815904 : D1 =02 = 0.075 mm B4 = 0.9 4 mm L4 = 1.0775 mm Two groups each have 2 columns x 2 rows of LEDs 20, where: D1=D2 = 0.075 mm B4=1.447 mm • L4 = 1.0775 mm The six individual light-emitting diode chips 20 are arranged in the form of 2 columns x 3 rows, wherein each of the light-emitting diode wafers 20 is followed by a main lens to make the optical between the light-emitting diode wafers 20 The distance is equal to zero, where: B 4 = 1.4 8 5 mm L4 = 1.486 mm Figure 5 shows a top view of a light source 1 and a control device 5 for another embodiment of the optical projection device described herein. The control device 5 is preferably ® for controlling and operating all of the light-emitting diode chips 20 of the light source during operation of the light source. Further, the control device 5 is only used to drive a portion of each of the LED chips 20 when the light source 1 is operated. In this case, the control device 5, for example, only causes current to flow through the eight light-emitting diode chips 20 of the group 203. The four light emitting diode chips 20 of the group 204 remain in a currentless state. In this manner, the size of the light-emitting surface 22 of the light source 1 can be reduced by the control means. Therefore, the ratio of the first side length ratio L1 to B1 is equal to 16 to 9 and the second side length ratio L1 to B1 or the like -18-200815904 is converted between 3 and 2. In order to connect the light-emitting diode wafer 20 of the light source 1 to the control device 5, the light-emitting diode wafer 20 and the control device 5 can be applied, for example, to a common terminal carrier 50. The terminal carrier 50 is constituted, for example, by a metal core circuit board having a conduction path, which connects the control device 5 to the light-emitting diode chip 20. Fig. 6 is a cross-sectional view showing the line A-A' along the optical projection device shown in Fig. 5. • A main lens 400 is disposed after each of the groups 201 and 202 of the LED array 20. The radiation emitting faces 401 of the main lens 400 are mutually polymerized such that the optical distance between the groups 201, 202 becomes zero. The main lens 400 is formed of at least the optical basic components described below depending on the position: a CPC- Compound Parabolic Concentrator, a CEC- Compound Elliptic Concentrator, a combined hyperboloid CHC-Compound Hyperbolic Concentrator. The side surface 402 of the main lens 400 is formed of the above-described optical basic element at least depending on the position. Further, the main lens 400 is formed at least in the form of a truncated cone or a frustum pyramid depending on the position, which is tapered toward the light source. In the above various forms, the main lens 400 can be formed in a solid body. In this case, at least a portion of the electromagnetic radiation is transmitted to the main lens 400 by total reflection on the side 402. Further, the surface of the solid body is coated with a reflective material at least depending on the position. Further, the main lens 400 may be formed of a hollow body having an inner surface having an anti-200815904 radiation property. For example, the inner surface of the main lens 400 may be coated with a reflective metal. The invention is of course not limited to the description made in accordance with the various embodiments. Conversely, the invention encompasses each novel feature and each combination of features, and in particular each of the various features of the various claims or the various embodiments of the various embodiments. The same is true for the scope of each patent application or the embodiments. The present patent application claims the priority of the German Patent Application Serial No. PCT Application No. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of an optical projection apparatus according to a first embodiment of the present invention. Figure 2 is a perspective view of an array formed by micromirrors 3, which may be used in one embodiment of the optical projection device described herein. Figure 3 is a plan view of a light source 1 for use in one embodiment of the optical projection device described herein. ® Figure 4 is a top plan view of a light source for use in another embodiment of the optical projection device described herein. Figure 5 is a plan view of a light source 1 and a control device 5 for another embodiment of the optical projection device described herein. Fig. 6 is a cross-sectional view taken along line A-A' of the optical projection device shown in Fig. 5. [Main component symbol description] 1 Light source -20- 200815904 2 Radiation emission surface 3 Non-emissive surface 4 Contact position 5 Control device 2 0 Light-emitting diode chip 2 1 First main surface 22 Light-emitting surface 3 1 Micro mirror 33 Mirror surface 200 Like 201, 202 Group B 1 ~ B4 Width LI ~ L4 Length D1, D2 Optical Distance - 2 1 -