TW200815624A - Ceramic coating material for thermal spray on the parts of semiconductor processing devices and fabrication method and coating method thereof - Google Patents

Ceramic coating material for thermal spray on the parts of semiconductor processing devices and fabrication method and coating method thereof Download PDF

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TW200815624A
TW200815624A TW096122264A TW96122264A TW200815624A TW 200815624 A TW200815624 A TW 200815624A TW 096122264 A TW096122264 A TW 096122264A TW 96122264 A TW96122264 A TW 96122264A TW 200815624 A TW200815624 A TW 200815624A
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coating
powder
thermal spray
spray material
plasma
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TW096122264A
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Chinese (zh)
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TWI375734B (en
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Hyun-Kwang Seok
Hae-Won Lee
Kyeong-Ho Baik
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Korea Inst Sci & Tech
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/30Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
    • C01F17/32Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6 oxide or hydroxide being the only anion, e.g. NaCeO2 or MgxCayEuO
    • C01F17/34Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123Spraying molten metal
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

A thermal spray coating material for use in semiconductor equipment, its preparation method, and a coating method thereof are disclosed. The coating material may have a composition of (A1xY1-x)2O3 (x is within a range of 0.05 to 0.95), and be formed as a powder with a diameter of 1 [mu]m to 100 [mu]m. A coating film that is coated by using the powder according to the thermal spray method has an amorphous structure.

Description

200815624 九、發明說明: 【發明所屬之技術領域】 發明領域 本發明涉及一種用於半導體製造設備的部件之熱喷塗 5材料、用於半導體製造設備的熱喷塗材料及其製造方法及 塗布方法。 【先前技術】 發明背景BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal spray 5 material for a component of a semiconductor manufacturing apparatus, a thermal spray material for a semiconductor manufacturing apparatus, a method of manufacturing the same, and a coating method . [Prior Art] Background of the Invention

在半導體元件或者其他實現超微細構造的工程領域中 10廣泛使用真空專離子體設備。例如,透過利用等離子體的 化學蒸鍍法在基板上形成蒸鍍膜的PECVD(等離子體增強 化學氣相沉積)設備、透過物理方法形成驗膜的真空錢膜 4備、以及按所需圖案刻基板或基板上的被塗部件的幹 式蝕刻設備等均採用真空等離子體設備。 15 20 Ά等離子體S備彻高溫等離子體⑽j半導體元件 ^實現超微細構造。因此,真空㈣子肢備内部會產生 :溫等離子體’從科致腔室及内部部件受損1且,腔 至及其部件的表面上會產生特定元素及污染粒子,因此腔 至内部受污染的可能性較大。 特別是,由於在等離子體環境中注人包含氟、氣的反 應氣體,因此等離子體_設備的腔室内壁及内部部件處 =常嚴重的腐純環境之中。此類腐純象首先會損傷 种6内卩。卩件’其次會生成污染物質及粒子,致使經過 至内部工序而生產的產品不良率增加,並降低產品品質。 5 200815624 【^^明内容 發明概要 本發明雲於上述問題而作,其目的在於提供一種用於 真二等離子體工藝設備的腔室及其内部部件的塗布材料, 5以便在熱喷塗陶兗過程中,減少保護塗層的内部缺陷,從 而提高耐腐蝕性並延長部件壽命。 本發明還提供一種上述用於半導體製造設備的塗布材 料的製造方法。 另外,本發明還提供一種利用所述塗布材料,對用於 1〇半導體製造設備的部件進行塗布的方法。 本發明的熱噴塗材料是用於半導體製造設備的熱喷塗 材料,其組成成分為(Α1χΥ1-χ)2〇3(χ的範圍是〇·仍_〇·95),且 具有非晶態(amorphous)結構。 其中,X可以是0.5-0.95。 15 而且,熱喷塗材料可以包括粒徑為M00卜历的粉末。 本發明的用於半導體製造設備的熱噴塗材料的製造方 法包括以下步驟:i)混合粒徑為O.i-30 ^1„1的八12〇3粒子和 1〇3粒子,以製備組成成分為(AlxYi Aha的範圍是 0.05-0.95 )的物質;ii)對所述物質進行噴霧乾燥,以製備合 成粉末;iii)在800-1500°C的溫度下,煆燒所述合成粉末: 其中,混合所述物質的步驟可進—步包括施加靜電之 步驟’所述步驟誘導並使Al2〇3粒子和Υ2〇3粒子分別攜帶不 同極性的電荷。 而且’所述施加靜電之步驟包括以下步驟:υ在溶劑 6 200815624 中添加聚曱基丙浠酸甲銨鹽(Poly-methyl metacrylic ammonmm salt),使八12〇3粒子攜帶負電荷;2)在溶劑中添 加χκ&Ι醯亞胺(P〇ly-ethylen imide),使Y2〇3粒子攜帶正電 荷。 5 本發明的用於半導體製造設備的熱噴塗材料的塗布方 法包括以下步驟:i)準備組成成分為(八^_02〇3卜的範圍是 〇·〇5-0·95)的熱噴塗材料;⑴向等離子體火焰注入熱喷塗材 料,藉此加熱所述熱噴塗材料;出)將透過加熱處於完全熔 融或半溶融狀態的熱噴塗材料層積在用於半導體製造設備 10的部件之表面上,以形成非晶態塗層。 其中,形成塗層的步驟可進一步包括形成金屬中間層 的步驟。 而且,所述形成塗層的步驟可進一步包括,逐漸改變 所述熱喷塗材料的組成成分,以形成梯度塗層的步驟。 15 而且在進行塗布時,可利用將熱喷塗材料的組成從與 被塗基材相同或類似的組成,逐漸改變為(八^ \)2〇3以的 範圍疋0.05-0.95)的梯度塗層的形成方法,形成梯度塗層。 另外,在开> 成塗層的步驟中,部件可以是真空等離子 體设備的腔室或腔室内部部件。 20 本發明的塗布材料由八1203和γ2()3的粉末組成, 因而作 為半導體製造設備部件之材料被廣泛使用,且價格低廉。 而且所述塗布材料很早就在半導體工藝上所使用,其穩定 性已被驗證,因而在其他半導體工藝中不會引發問題。 利用本發明的塗布材料,在基材上形成熱喷塗陶究塗 7 200815624 層%,會形成非晶態的塗層。因此,在變為固體時所產生 的體積變化不大’從而可減少塗層的内部缺陷。 而且,由於塗層的内部缺陷減少,塗層保持較高的機 械強度,從而可提高在腐姓環境下的耐腐餘性。 5 另外,利用本發明的塗布粉末及塗布方法,可在真空 等離子體工藝設備的腔室及其内部部件上形成機械強度及 耐腐餘性咼的塗層。因此,可延長部件的使用壽命,無需 頻繁地更換製造設備的部件或經常維修製造設備,從而可 提高半導體的生產效率。 10 纟且,半導體製造工藝中,由於污染粒子的生成率降 低,從而可提高產品品質。 圖式簡單說明 第1圖係為半導體製造設備之一的等離子舰刻設備 的縱剖視圖。 15 帛2圖係為等離子體熱噴塗設備之等離子體搶的剖面 示意圖 第3圖係為利用外部形式的等離子體槍所形成之 YA(氧她)塗層剖面的電子掃描輸鏡照片。 第4圖係為利用内部形式的等離子體搶所形成之γ2〇3 20塗層剖面的電子掃描顯微鏡照片。 第5圖係為用以顯示液態炼融陶竟粒子在冷卻時產生 龜裂的電子掃描顯微鏡照片。 士第6圖係為液態物質經冷卻而變為固態時,根據溫度和 ^間產生結晶化現象的條件模式圖。 8 200815624 第7圖係為用以顯示液態物質經冷卻而變為固悲^所 產生的體積變化過程的模式圖。 第8圖係為用以顯示液態物質變為結晶態固體犄所產 生的缺陷切成原理模式圖。 _ 5 第9圖係為用以說明按材料的種類,冷卻時形成結晶態 " 目相的條件各異的模式圖。 w 第10圖係為用以說明液態物質經冷卻而形成非晶悲 ¥ ’所發生的體積收縮過程的模式圖。 • 第11圖係為用以說明液態物質成為非晶態時,阻止產 10生龜裂等缺陷的過程模式圖。 第12圖係為用以說明混合不同類型的粉末,以製備粉 末大小較大的熱噴塗用複合粉末過程的模式圖。 第13圖係為根據本發明合成的熱噴塗用陶瓷粉末的電 子掃描顯微鏡照片。 15 弟14圖係為純Al2〇3的X線分析結果(x=zj)。 第15圖係為(Α1χγι-χ)2〇3(Χ = 〇·9)的X線分析結果 _ (χ=0·9)。 第16圖係為(Α1χΥι-χ)2〇3(χ = 0.6)的X線分析結果 (χ=0·6) 〇 20 第17圖係為(Α1χΥι-χ)2〇3(χ = 0·1)的X線分析結果 (χ=0·1) 〇 第18圖係為高純度γ2〇4Χ線分析結果(χ=〇)。 第19圖係為在(aixy1x)2q3(x=g.6)粉末未完全溶融的狀 悲下’進行熱嘴塗而形成的塗層的义線分析結果(χ=〇·6)。 9 200815624 第20圖係為透過熱喷塗而形成的AU .56Υ0.44Ο3物質的非 晶態塗層的低倍率電子掃描顯微鏡照片(Χ200)。 第21圖係為透過熱噴塗而形成的AU.56Yo.4403物質的非 晶態塗層的低倍率電子掃描顯微鏡照片(Χ650)。 5 第22圖係為透過熱喷塗而形成的八11.56¥〇.4403物質的非 晶態塗層的高倍率電子掃描顯微鏡照片。 第23圖係為透過熱喷塗而形成的Ah.25Υ〇.75 03物質的非 晶態塗層的低倍率電子掃描顯微鏡照片。Vacuum ionizer equipment is widely used in semiconductor components or other fields of engineering that realize ultra-fine construction. For example, a PECVD (plasma enhanced chemical vapor deposition) device in which a vapor deposited film is formed on a substrate by a chemical vapor deposition method using plasma, a vacuum film formed by a physical method, and a substrate in a desired pattern are prepared. A vacuum plasma apparatus is used for the dry etching apparatus or the like of the coated member on the substrate. 15 20 Ά Plasma S is prepared for high-temperature plasma (10) j semiconductor components ^ Realize ultra-fine structure. Therefore, the inside of the vacuum (four) sub-parent will produce: the warm plasma 'damages from the chamber and internal components 1 and the specific elements and contaminated particles will be generated on the surface of the chamber to its parts, so the chamber is internally contaminated. The possibility is greater. In particular, since the reaction gas containing fluorine and gas is injected into the plasma environment, the inner wall of the chamber and the internal components of the plasma_equipment are often in a severely rotted environment. Such a pure image of rot will first damage the genus of the species. The latter will generate pollutants and particles, which will increase the defect rate of products produced through internal processes and reduce product quality. 5 200815624 [^^明明发明发明概要 The present invention has been made in view of the above problems, and an object thereof is to provide a coating material for a chamber of a true two plasma process apparatus and its internal components, 5 for thermal spraying of ceramics During the process, internal defects of the protective coating are reduced, thereby improving corrosion resistance and extending component life. The present invention also provides a method of producing the above-described coating material for a semiconductor manufacturing facility. Further, the present invention provides a method of coating a member for a semiconductor manufacturing apparatus using the coating material. The thermal spray material of the present invention is a thermal spray material for a semiconductor manufacturing apparatus, and has a composition of (Α1χΥ1-χ)2〇3 (the range of χ is still 仍·仍_95·), and has an amorphous state ( Amorphous) structure. Wherein X can be from 0.5 to 0.95. Further, the thermal spray material may include a powder having a particle diameter of M00. The method for producing a thermal spray material for a semiconductor manufacturing apparatus of the present invention comprises the steps of: i) mixing eight 12 〇 3 particles and 1 〇 3 particles having a particle diameter of Oi-30 ^1 „1 to prepare a composition ( AlxYi Aha ranges from 0.05 to 0.95); ii) spray drying the material to prepare a synthetic powder; iii) calcining the synthetic powder at a temperature of 800-1500 ° C: wherein, the mixing chamber The step of describing the substance may further comprise the step of applying static electricity. The step of inducing and causing the Al2〇3 particles and the Υ2〇3 particles to carry charges of different polarities, respectively. And the step of applying static electricity comprises the following steps: Solvent 6 200815624 is added with poly-methyl metacrylic ammonium salt, which makes the octa 12 〇 3 particles carry a negative charge; 2) adding χκ & Ι醯 Ι醯 imine in the solvent (P〇ly- The ethylenium imide) causes the Y2〇3 particles to carry a positive charge. 5 The coating method of the thermal spray material for a semiconductor manufacturing apparatus of the present invention comprises the following steps: i) preparing a composition of (eight^_02〇3b is a range) ·〇5-0·95) thermal spray material (1) injecting a thermal spray material into the plasma flame, thereby heating the thermal spray material; and discharging a thermal spray material that is in a fully molten or semi-melted state by heating on the surface of the component for the semiconductor manufacturing apparatus 10. Forming an amorphous coating. The step of forming a coating layer may further comprise the step of forming a metal intermediate layer. Moreover, the step of forming a coating layer may further comprise gradually changing the composition of the thermal spray material. Ingredients to form a gradient coating. 15 Also, when coating, the composition of the thermal spray material can be gradually changed from (the same as or similar to the composition of the substrate to be coated) to (eight^)2〇3 The method of forming a gradient coating of the range 疋0.05-0.95) forms a gradient coating. In addition, in the step of opening the coating, the component may be a chamber of a vacuum plasma apparatus or a component inside the chamber. The coating material of the present invention is composed of a powder of eight 1203 and γ 2 () 3, and thus is widely used as a material of a semiconductor manufacturing equipment component, and is inexpensive. Moreover, the coating material is very As used in semiconductor technology, its stability has been verified, so it does not cause problems in other semiconductor processes. Using the coating material of the present invention, thermal spray coating is formed on the substrate. An amorphous coating is formed. Therefore, the volume produced when it becomes a solid does not change much, thereby reducing the internal defects of the coating. Moreover, the coating maintains high mechanical strength due to the reduction of internal defects of the coating. Therefore, the corrosion resistance in the environment of the rot can be improved. 5 In addition, by using the coating powder and the coating method of the present invention, mechanical strength and corrosion resistance can be formed in the chamber of the vacuum plasma processing apparatus and its internal components. Sexual coating. Therefore, the life of the component can be extended, the components of the manufacturing equipment can be frequently replaced, or the manufacturing equipment can be frequently repaired, thereby improving the productivity of the semiconductor. 10 In addition, in the semiconductor manufacturing process, the production rate of contaminated particles is reduced, thereby improving product quality. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view of a plasma stencil apparatus which is one of semiconductor manufacturing equipment. 15 帛 2 is a plasma grab profile of a plasma thermal spray apparatus. Fig. 3 is an electronic scanning transmission photograph of a YA (oxygen) coating profile formed by an external plasma gun. Figure 4 is an electron scanning micrograph of a γ2〇3 20 coating profile formed by internal plasma capture. Fig. 5 is a scanning electron micrograph showing the cracking of the liquid smelting pottery particles upon cooling. Figure 6 is a conditional diagram showing the crystallization phenomenon depending on temperature and temperature when the liquid substance is solidified by cooling. 8 200815624 Figure 7 is a schematic diagram showing the volume change process produced by the liquid material being cooled and solidified. Fig. 8 is a schematic diagram showing the principle of defect formation by the liquid substance becoming a crystalline solid. _ 5 Fig. 9 is a pattern diagram for explaining the conditions under which the crystal form is formed by cooling according to the type of material. w Fig. 10 is a schematic diagram for explaining the volume shrinkage process that occurs when the liquid material is cooled to form an amorphous material. • Fig. 11 is a process pattern diagram for explaining defects such as cracking and cracking when the liquid material is in an amorphous state. Fig. 12 is a schematic view for explaining a process of mixing different types of powders to prepare a composite powder for thermal spraying having a larger powder size. Figure 13 is an electron scanning micrograph of a ceramic powder for thermal spraying synthesized in accordance with the present invention. 15 Brother 14 is the result of X-ray analysis of pure Al2〇3 (x=zj). Figure 15 is the result of X-ray analysis of (Α1χγι-χ)2〇3(Χ = 〇·9) _ (χ=0·9). Figure 16 is the X-ray analysis result of (Α1χΥι-χ)2〇3 (χ = 0.6) (χ=0·6) 〇20 The 17th figure is (Α1χΥι-χ)2〇3 (χ = 0· 1) X-ray analysis results (χ=0·1) 〇 Figure 18 shows the results of high-purity γ2〇4Χ line analysis (χ=〇). Fig. 19 is a result of a line analysis of a coating formed by hot mouth coating under (aixy1x) 2q3 (x = g. 6) powder is not completely melted (χ = 〇 · 6). 9 200815624 Figure 20 is a low-magnification electron-scan micrograph (Χ200) of an amorphous coating of AU.56Υ0.44Ο3 material formed by thermal spraying. Figure 21 is a low-magnification electron scanning micrograph (Χ650) of an amorphous coating of AU.56Yo.4403 material formed by thermal spraying. 5 Figure 22 is a high-magnification electron-scan micrograph of an amorphous coating of eight 11.56¥〇.4403 material formed by thermal spraying. Figure 23 is a low-magnification electron scanning micrograph of an amorphous coating of Ah.25Υ〇.75 03 material formed by thermal spraying.

第24圖係為透過使用靜電混合方法而形成的 10 AI1.25Y0.75O3物質的非晶態塗層之低倍率電子掃描顯微鏡照 片。 第25圖係為用以顯不ΑΙ2Ο3、Υ2Ο3的熱育塗塗層與本發 明實施例塗層的硬度比較結果之曲線圖。 弟26圖係為用以顯不ΑΙ2Ο3、Υ2Ο3的熱嘴塗塗層與本發 15 明實施例塗層的抗劃性能比較結果之曲線圖。 第27圖係為用以顯示丫203熱喷塗塗層與本發明實施例 塗層對鹽酸的抗腐钱性比較結果之曲線圖。 第28圖係為用以顯不ΑΙ2Ο3、Υ2Ο3熱喷塗塗層與本發明 實施例塗層對腐蝕環境(等離子體)的耐久性比較結果之曲 20 線圖。 第29圖係為用以顯示按照本發明的實驗例4的條件所 製造的塗層的X線分析結果之曲線圖。 第30圖係為用以顯示按照本發明的實驗例5的條件所 製造的塗層的X線分析結果之曲線圖。 10 200815624 製造=:=:__的_ 弟32圖係為用以顯示本發明實 顯微鏡照片。 層之包子知描 條件Ϊ,:!Γ以顯示在以300nm/分的速鄉 h仵下#本發明實Fig. 24 is a low-magnification electron scanning microscope photograph of an amorphous coating of 10 AI1.25Y0.75O3 substance formed by using an electrostatic mixing method. Fig. 25 is a graph showing the results of comparing the hardness of the coating of the coating of the embodiment of the present invention with the coating of the coating of the present invention. Figure 26 is a graph showing the results of comparison of the scratch resistance of the coatings of the examples of the present invention with respect to the coatings of the coatings of the present invention. Figure 27 is a graph showing the results of comparison of the anti-corrosion properties of the 丫203 thermal spray coating with the coating of the present invention on hydrochloric acid. Fig. 28 is a 20-line diagram showing the results of comparing the durability of the thermal spray coating of the present invention with the corrosion environment (plasma) of the coating of the embodiment of the present invention. Fig. 29 is a graph showing the results of X-ray analysis of the coating layer produced in accordance with the conditions of Experimental Example 4 of the present invention. Fig. 30 is a graph showing the results of X-ray analysis of the coating layer produced in accordance with the conditions of Experimental Example 5 of the present invention. 10 200815624 Manufacture of ===:__ The figure 32 is used to display a photo of the microscope of the present invention. Layer of the buns to understand the condition Ϊ, :! Γ to display at 300nm / min speed home h仵下# the invention

10 之電子掃描顯微鏡照片。胃如-個小時_結果 【货】 較佳實施例之詳細說明 下面參〜圖式詳細說明本發明的實施 域技術人員容易實施。本發明可具有各種不同的實施方 式,亚不局限於在此示出的實施例。 以第1圖所_等離子體幹式_讀為例,具體說明 真空等離子體腔室及其部件的腐姓問題。 15 料子齡式㈣設備祕_半導私片等基板或10 electron scanning micrographs. Stomach-hours_results [Goods] Detailed Description of Preferred Embodiments The following description of the embodiments of the present invention will be readily described by those skilled in the art. The invention may be embodied in a variety of different embodiments, and is not limited to the embodiments shown herein. Taking the plasma dry_read as shown in Fig. 1 as an example, the problem of the rot of the vacuum plasma chamber and its components will be specifically described. 15 material age type (four) equipment secret _ semi-conductive private film and other substrates or

基板上薄膜的特定位置,以便在基板上形成所需電路或構 造。 所述設備的部件及其工作原理如下。姓刻氣體透過設 置於氣體分散盤13上的孔14進入腔室内部。餘刻氣體進入 20以後,對上部電極2和下部電極9施加RF電流,使其產生等 離子癉,從而增加蝕刻氣體的反應性。此後,使增強反應 性的#刻氣體衝撞於放置在基板支架8上的基板15,從而蝕 刻基板戒覆蓋在其上面的部分膜層。 所述蝕刻氣體可選自c4F8、C5H8、CH2F2、CF、CF、 11 200815624 CF3、CF4、SF6、NF3、f2 ' ch2f2、CHF3、c2F6 等含有氟元 素F的氣體;C12、BC13、SiC14、HC1等含有氯元素〇1的氣體; HBr、Bn、CFsBr等含有溴元素Br的氣體;以及其他以队、 〇2、Ar、Η2等氣體中的一種或兩種以上混合氣體。 5 但疋,餘刻氣體不僅影響被钱刻物件即基板15,而且 還會影響其他部分。即,所述姓刻設備的腔室及其内部部 件也會由於製造工藝中腔室内部的極限環境而受到化學、 物理損傷。 蝕刻工藝是利用腐蝕性氣體及加速離子、等離子體 10專,對基板的整個表面或其局部施加物理_化學衝擊,從而 使其受損之後’去除受損部分的工藝,因此腔室内壁及内 部部件也會在此過程中遭受損傷。具體而言,腔室及内部 部件會受到化學反應性較高的蝕刻氣體之化學侵蝕 (chemical attack)。同時,還會由於在RF電磁場的作用下加 15速的離子化氣體粒子的轟擊(I〇n bombardment)而其表面 受:到物理侵触(phyical attack)。 如上所述,如果腔室及内部部件在上述過程中受損, 就需要更換或清洗/維修受損的部分蝕刻設備,自此需要额 外支出費用。而且,為更換或清洗/維修設備,需要停土生 20 產線,從而會延長產品的工期。 不僅如此,受損的腔室及内部部件之表面所產生的汚 染物質可能會污染被蝕刻物件_晶片*LCD玻璃基板,因此 會增加半導體及LCD的不良率。 因此,為提咼真空等離子體設備的腔室及内部部件的 12 200815624 而才久性,出現了各種方法。下 子驾知的防止眞空等離子 體腔室㈣及其㈣部件额的典型枝詳細說明。 通常,真空等離子體腔室的松 ^ A 刃材枓為不銹鋼合金、鋁(或 其合金)或鈦(或其合金)等金屬松 鸯材枓和Si〇2、Si或αι2ο3等陶 瓷材料。 vThe particular location of the film on the substrate to form the desired circuitry or structure on the substrate. The components of the device and its working principle are as follows. The gas of the last name enters the interior of the chamber through a hole 14 provided in the gas dispersion disk 13. After the residual gas enters 20, an RF current is applied to the upper electrode 2 and the lower electrode 9, causing plasma enthalpy to increase the reactivity of the etching gas. Thereafter, the enhanced reactive gas is impinged on the substrate 15 placed on the substrate holder 8, thereby etching the substrate or covering a portion of the film layer thereon. The etching gas may be selected from the group consisting of c4F8, C5H8, CH2F2, CF, CF, 11 200815624 CF3, CF4, SF6, NF3, f2 'ch2f2, CHF3, c2F6 and the like containing fluorine element F; C12, BC13, SiC14, HC1, etc. a gas containing a chlorine element 〇1; a gas containing a bromine element Br such as HBr, Bn, or CFsBr; and another mixed gas of one or more of gases such as a group, 〇2, Ar, and Η2. 5 However, the residual gas not only affects the substrate to be engraved, ie, the substrate 15, but also affects other parts. That is, the chamber of the surname device and its internal components are also subject to chemical and physical damage due to the extreme environment inside the chamber during the manufacturing process. The etching process is a process of removing the damaged portion by applying a physical-chemical impact to the entire surface of the substrate or a portion thereof by using a corrosive gas and an accelerating ion or plasma 10, so that the inner wall and the interior of the chamber are removed. Parts also suffer damage during this process. Specifically, the chamber and internal components are subject to chemical attack by highly chemically etched etching gases. At the same time, due to the bombardment of the 15th-speed ionized gas particles under the action of the RF electromagnetic field, the surface is subjected to: physical attack. As described above, if the chamber and internal components are damaged in the above process, it is necessary to replace or clean/repair the damaged partial etching equipment, and additional expenses are required therefrom. Moreover, in order to replace or clean/repair equipment, it is necessary to stop the production line, which will extend the product's construction period. Moreover, the contamination generated by the damaged chamber and the surface of the internal components may contaminate the etched object _ wafer * LCD glass substrate, thus increasing the defect rate of the semiconductor and LCD. Therefore, in order to improve the durability of the chamber and internal components of the vacuum plasma apparatus 12 200815624, various methods have appeared. A detailed description of the typical branches of the hollow space plasma chamber (4) and its (4) components. Generally, the loose-blade material of the vacuum plasma chamber is a metal loose material such as a stainless steel alloy, aluminum (or an alloy thereof) or titanium (or an alloy thereof), and a ceramic material such as Si〇2, Si or αι2ο3. v

由紹D金衣成的科,廣泛採用透過陽極化工藝在基 材表面上形㈣2〇3喊塗層的技術。但是透過這種方法所 形成的陶竟塗層内部存在諸多缺陷,因此不僅很難達到高 硬度和耐腐雜要求,而且還存在污染粒子生成率比較高 10的缺點。 另外,難以進行陽極化工藝的各種金屬材料及陶竟材 料,則採用透過耐腐紐較高、污染粒子生成率較低的外 部物質而形成保護膜的方法。 而且,眾所周知的還有單獨或混合使用所述塗布材料 來進行熱喷塗的技術。但是如果以這種方法塗布所述物 貝,則由於所產生的内部缺陷,會使塗層的特性極度惡化。 隶近’對可適用於陽極化技術的銘合金材料也採用利 用異型陶瓷材料形成保護膜的方法。利用異型陶甍材料形 成保護膜的最具代表性的方法就是熱喷塗法。 20 熱噴塗法是向高溫等離子體火焰注入金屬或陶兗粉 末,藉此加熱所述粉末之後,在完全熔融或半熔融的狀態 下’將其層積在基材表面上從而形成塗層的技術。 第2圖是熱噴塗設備的重要部分一等離子體搶的結構 示意圖。下面詳細說明等離子體槍20的工作原理。 13 200815624 首先,透過氣體注入口 21注入的等離子體氣體(八1·、 N2、H2、He等),在透過被施加高電力(通常為30_100 v, 400-1000A)的負極22和正極24之間的間隙的過程中,其中 一部分氣體被解理,從而形成5000_15000°C的高溫等離子 - 5 體火焰25。 ' 為防止等離子體生成部分一負極末端的腐蝕,負極22 v 通常使用鎢或鎢強化金屬材料,而正極24則由銅或銅合金 製成’且其内部設有冷卻通道23,其用於防止由於高溫等 離子體’正極壽命縮短。 10 透過等離子體熱喷塗法,可以在金屬、陶瓷等各種材 料表面上塗布相同或不同的材料,所述塗布材料使用粉末 或線型金屬或陶曼。 其次’將塗布材料製成粉末之後,透過粉末注入口 27 注入到咼溫等離子體火焰25之中。粉末注入口 27可透過支 一 15架26固定在等離子體搶(以下簡稱“外部形式,,(ExTERNal • TYPE))上,也可以設置在正極24(以下簡稱“内部形式,, (INTERNAL TYPE))上。 透過粉末注入口 27注入的粉末在被高溫等離子體火焰 完全炼融或部分熔融的狀態下,高速(200〜1〇〇〇 m/s)飛到 20被塗部件30,從而形成塗層29。 對氧化物陶瓷材料進行等離子體熱噴塗時,可在大氣 中進行作業。但是,在高溫條件下引起氧化反應或容易分 解的金屬材料或碳化物、氮化物等材料則要在真空或低壓 的腔室内進行等離子體熱喷塗。 14 200815624 但是,透過熱喷塗所形成的塗; 半導體製造4中所出現的各種叫。’仍然無法完全解決The technique of forming a (four) 2 〇 3 shouting coating on the surface of the substrate by an anodizing process is widely used in the section of the D. However, there are many defects in the interior of the ceramic coating formed by this method, so that it is difficult to achieve high hardness and corrosion resistance, and there is also a disadvantage that the generation rate of contaminated particles is relatively high. Further, in the case of various metal materials and ceramic materials which are difficult to be anodized, a protective film is formed by using an external material having a high corrosion resistance and a low generation rate of contaminating particles. Moreover, it is also known to use the coating material alone or in combination for thermal spraying. However, if the shell is coated in this way, the properties of the coating are extremely deteriorated due to internal defects generated. It is close to the method of forming a protective film using a special-shaped ceramic material for the alloy material that can be applied to the anodizing technology. The most representative method of forming a protective film using a shaped ceramic material is thermal spraying. 20 Thermal spraying method is a technique of injecting metal or ceramic powder into a high-temperature plasma flame, thereby heating the powder and then layering it on the surface of the substrate to form a coating in a completely molten or semi-molten state. . Figure 2 is a schematic diagram of the structure of a plasma grab in an important part of the thermal spray equipment. The operation of the plasma gun 20 will be described in detail below. 13 200815624 First, the plasma gas (eight-1, N2, H2, He, etc.) injected through the gas injection port 21 passes through the negative electrode 22 and the positive electrode 24 to which high electric power (usually 30_100 v, 400-1000 A) is applied. During the interstitial process, a portion of the gas is cleaved to form a high temperature plasma-5 body flame 25 of 5000 to 15000 °C. In order to prevent corrosion of the plasma generating portion and the negative electrode terminal, the negative electrode 22 v is usually made of tungsten or tungsten reinforced metal material, and the positive electrode 24 is made of copper or copper alloy and has a cooling passage 23 inside thereof for preventing Due to the high temperature plasma, the positive electrode life is shortened. 10 Through plasma thermal spraying, the same or different materials can be coated on the surface of various materials such as metal and ceramic. The coating material uses powder or linear metal or Tauman. Next, the coating material is made into a powder, and then injected into the enthalpy plasma flame 25 through the powder injection port 27. The powder injection port 27 can be fixed to the plasma blast by a support frame 26 (hereinafter referred to as "external form, (External TYPE)), or can be disposed on the positive electrode 24 (hereinafter referred to as "internal form, (INTERNAL TYPE)" )on. The powder injected through the powder injection port 27 is flown to the 20-coated member 30 at a high speed (200 to 1 〇〇〇 m/s) in a state of being completely fused or partially melted by the high-temperature plasma flame, thereby forming a coating layer 29. When plasma thermal spraying of an oxide ceramic material, it can be operated in the atmosphere. However, materials such as metal materials or carbides and nitrides which cause an oxidation reaction or are easily decomposed under high temperature conditions are subjected to plasma thermal spraying in a vacuum or low pressure chamber. 14 200815624 However, the coating formed by thermal spraying; various types appearing in semiconductor manufacturing 4. ‘ still can’t completely solve

=圖及第4圖是用電子掃描顯微 塗倘而形成的塗制面之"。 制、、工U 5 l〇 15 2〇 製造設傷料的㈣,㈣㈣#,灿作為半導體 Θ 又侍廣泛的應用。 弟3圖疋利用所述外部形式的等 u ^ ^ 寺離子體槍塗布的保護 艨的"面^片,其存在多個不規則缺陷。 在所述條件下形成的塗層,其 ^ 異’但是所述特性對等離子體搶、性(如硬度)相對優 出、辦氣體的注入量,所施加的的距離,沿、 化#常敏感。而且,進行塗布的=熱喷塗條件的變 力,所以存在能效降低的缺點。而要施加過大的電 外的姑粗,强你田士 且,為熔融陶瓷等高熔 广而此時⑽利於提高等離子體溫度的氫氣等氣 體而此%Y2〇3塗層上會形成黑點。 第4圖是利用所述内部形 _面的口。從離子體搶所形成的塗 成的制(SPLAT)内部,㈣^液滴與基材衝突所形 間的介面上也產生了縫^向個龜裂’而且在攤片之 不俨,而I,I::成的塗層不僅其機械特性(如硬度) U 龜裂和其介面的縫隙會成為反應 神子的形成。而且的腐·最終加 戶斤施加的機械衝擊會使塗層料=造過程或清洗過程中 並且,透過熱噴塗法塗布所述=材料時,會形成所 15 200815624 述攤片的内部龜裂及 陷,而第5圖是的縫隙。第5圖示出了上述缺 在基材表面而形成攤/Γ被等離子體火焰炼融之後層積 u 〇 4,用電子掃描顯微鏡拍攝其表面 的…片㈣的缺陷在透過 5製造的實際工程時會引發諸多問題後 其次,參照第5圖至 習知喊在利賴倾法來塗布= Figure and Figure 4 are the coated surfaces formed by electron scanning microscopy. System, work U 5 l〇 15 2〇 Manufacturing (4), (4) (4) #, can be used as a semiconductor Θ and a wide range of applications. Figure 3 illustrates the use of the externally-formed u ^ ^ Temple ion gun to protect the 艨's "face, which has multiple irregularities. The coating formed under the conditions is different, but the characteristics are relatively excellent for plasma grazing, the sex (such as hardness), the amount of gas injected, the distance applied, and the sensitivity . Further, since the application of the coating = thermal spraying conditions is variable, there is a disadvantage that the energy efficiency is lowered. In addition, it is necessary to apply an excessively large electric power, and it is strong for you, and it is a high-melting molten ceramic, and at this time (10) a gas such as hydrogen which is advantageous for increasing the plasma temperature, a black dot is formed on the %Y2〇3 coating. Figure 4 is a port utilizing the inner shape. From the inside of the coated system (SPLAT) formed by the ionic body, the interface between the (4)^ droplet and the substrate conflict also produces a crack to the crack, and it is not in the booth, and I , I:: The coating is not only mechanical properties (such as hardness) U crack and its interface gap will become the formation of the reaction god. Moreover, the mechanical impact exerted by the rot-final jin will cause the coating material to be inside the manufacturing process or the cleaning process, and when the material is coated by the thermal spraying method, the internal crack of the slab of It is trapped, and Figure 5 is the gap. Fig. 5 is a view showing the actual engineering of the defect of the sheet (4) which is formed by the above-mentioned film (4) which is immersed in the surface of the substrate and which is formed by the plasma flame, and which is laminated with a scanning electron microscope. When it will cause a lot of problems, secondly, refer to Figure 5 to Xizhi, shouting in the Lilai method.

如第5圖所示,2=41^介__因° 融陶竟粉末層積於義材夺多個龜裂。熱喷塗時,溶 H)面對此進行詳細·面,並經過冷卻而產生攤片。下 成夜I、陶兗的兀素(如他中的Y和〇)間結合得比較 Λ ^且元素的排列順序也保持不規則的狀態 。這樣的 =是如果冷卻到溶點(Τ-)以下,就會變成固態,並且 …组Ά素之間的結合也會變得緊密,且變為元素排列有 15 規則的結晶態。 如上所述’進行熱喷塗時,在炫融陶竟粉末層積在基 材表$並經冷卻的過程中,溶融陶究粉末經過相變轉移到 結晶態,而所述結晶態致使攤片形成龜裂。 第6圖顯不將陶兗材料冷卻到熔點以下時,根據時間和 20 溫度形成結晶態的條件。 陶瓷在特定溫度附近(如第6圖中Tm)具有最快的相變 速度’其在此溫度下迅速變為結晶態。從液態變為固態的 過程中,如果冷卻時間短於在此溫度下進行結晶化所需的 時間(第6圖中示為t〇*),就無法形成結晶態。因此,陶瓷材 16 200815624 料如同在液態狀態下,轉變為組成元素間的排列不規則的 固體非晶態。 第7圖表示液態物質經過冷卻而變為結晶態固體時的 體積變化。 5 當溫度下降時,陶瓷物質因其組成元素之相鄰原子間 的距離縮短而收縮,而當形成組成元素有序排列的結晶態 時,其體積會陡然變小(如第7圖中的Λν)。體積如此的急 劇變小,是熱噴塗工藝中,產生攤片的内部龜裂和介面缝 隙的原因。第8圖表示這種缺陷的形成過程。 10 為使液態的熔融陶瓷經冷卻而相變為固體,需要其組 成元素均排列到規定位置上。因此,組成元素的種類越多, 結晶態的原子排列結構越複雜,諸多種類的元素需要移動 到各自規定的位置上,因此排列需要較長的時間。 因此,如第9圖所示,如果組成元素的種類增加,與一 15 般的情況相比,AmorM(表示非晶態材料(amorphous materials),是組成成分為(ΑΐχΥι_χ)2〇3 (X的範圍是0·05_〇 95) 的非晶態塗布材料的統稱,以下將這種非晶態材料稱為 “AmorM”)在相同的溫度下,形成結晶態所需時間更長。因 此,AmorM更容易形成為非晶態。 20 本發明實施例的塗布材料包括多組分陶瓷,如第9圖所 示,形成結晶悲時所需要的時間較長。即,熱喷塗時,容 易形成非晶態。 而且,本發明實施例的塗層利用本發明實施例的多組 分陶瓷,使大部分塗層成為非晶態。此時,所述塗層至少 17 200815624 - 5 包括50%以上的非晶態為佳,而最好形成1〇〇%的非晶態。 塗層中的非晶態少於50%,就等同於包含50%以上的結 晶態。因此如上所述,其由液態轉變為結晶態固體的過程 中,其體積會產生很大的變化,從而會在塗層產生缺陷。 第10圖表示從液態相變為非晶態時的體積變化。如第 10圖所示,從液態變為非晶態時,其體積不會有急劇的變 化。其原因是非晶態固體的原子排列與液體狀態下的原子 排列幾乎相同。因此,利用本發明的多組分陶瓷塗布材料 形成塗層,就會形成非晶態結構的固體,所以在特定溫度 10 下其體積不會有急劇的縮小。因此,不會產生從液態相變 為結晶態固體時的體積收縮而引起的攤片内部縱向龜裂及 介面縫隙等内部缺陷。第11爵表示從液態相變為非晶態固 態的過程。 _ 15 • 下面,詳細說明形成本發明實施例的塗層的塗布材料。 為了容易形成非晶態的塗層,本實施例的塗布材料包 括多組分陶瓷材料,而這一多組分陶瓷材料含有3種以上元 素。 20 所述多組分陶瓷材料可使用包含Al2〇3及Y2〇3的組成 元素即Al、Υ、〇的多組分陶瓷材料。 所述多組分陶瓷材料的組成元素比例最好要滿足化學 式(A1xY“x)2〇3(x為〇·〇5-〇·95)。如果X值小於0.05或大於 〇·95 ’就會在利用已製成的粉末形成塗層的工藝中無法形 成百分之百的非晶態的塗層。從而會導致抗腐蝕性下降等 物理、化學特性的變劣。其中,氧元素的含量可根據熱噴 18 200815624 塗過程中火焰的溫度、喷射距離等而改變。 其次,說明製備本發明實施例的多組分陶瓷材料的方 法。 本發明的多組分陶瓷材料可透過以下幾種陶瓷合成方 - 5 法來製成粉末狀。 ; 陶瓷合成方法的一種方法是,將含有A1和Y的化學物質 - 混合之後,經過熱處理去除不必要的元素,從而最終製備 由元素A卜Y、〇組成的粉末。其中,含有A1的化學物質有 _ Al(OH)3、ai(c3h5o3)3、A1(C18H3302)3、A1(C15H31C00)3、 10 A12(S〇4)3等,含有Y的化學物質有Y2(C03)33H20、y2(s〇4)3 8H20 等。 下面進一步詳細說明陶兗粉末的製備方法。 第一種方法:首先將所述含有A1和Y的化學物質混合形 成(AlxYkhC^x為0·05-0·95)。其次,將其用高溫加熱,以 - I5 使除Α1-Υ-0以外的不穩定物質分解並去除,從而去除c、 - Η、0等雜質。 W 第二種方法:將所述化學物質溶解于水或乙醇等溶劑 之後進行加熱,以製備具有(AlxYkMMx為0.05-0.95)組成 的Α1-Υ-0粉末。 2〇 第三種方法:首先製備粒徑為Μ00 μηι的Α1金屬及Υ 金屬的混合粉末,或者Α1和Υ的合金粉末之後,對所述混合 粉末進行氧化處理而合成所述粉末。其中,Α1金屬在常溫 下若與氧氣接觸,其表面也會被氧化而形成ΑΙ2Ο3陶贫’ {一 是為了易於進行氧化反應,可提高溫度加快氧化反應速 19 200815624 度。而且,還可以將A1金屬製成粉末,以加大其反應面積。 不僅是A1金屬粉末,Y金屬粉末及Ai和γ的合金粉末也 可透過與A1金屬粉末的高溫氧化法相同的方法進行氧化, 從而製備(A1203)x(Y2〇3)1-x陶瓷。 5 第四種方法:混合A1金屬和Y金屬粉末之後,對所述混 合粉末進行氧化處理’以製備bulk狀陶瓷,然後將其粉碎 製成粒徑等於或小於100 μπι的粉末。此合成法與上述高溫 氧化法相同,都是在高溫下氧化金屬元素而形成氧化物的 方法。前面所述的高溫氧化法是對粉末進行氧化,而本方 1〇法則對粒徑為幾毫米(mm)或幾釐米(cm)的塊狀物進行氧 化0 製備金屬粉末將存在工藝複雜,製造成本增高的問 題,但是不管金屬合金的大小或形狀如何,若在bulk狀態 下進行氧化,就可用低廉的價袼製造陶瓷材料。 第五種方法·混合粒徑為〇1_3〇粒子和ίο; 粒子,以製備組成成分為(Α1χΥΐχ)2〇3(4〇•㈣·95)的物 質,並進行喷霧乾燥,製備含有Α1、γ、〇元素且粒徑為Η00 的乾燥的合成粉末。 第五種方法巾’將Αΐ2〇3、γ2()3粉末製備成組成成分為 ^^203(χ為〇.〇5_G 95)的物f之後,與溶劑、結合劑、 ί散劑等-故合。職,利用7請。c的空氣等氣體噴 務,或者在高速旋轉的圓盤上形成微細的槽,並透過此槽 贺灑從而製造粒徑為1-200 μπι的粉末。 透過本方法所製造的粉末由於其強度較弱’因此還需 20 200815624 要在900-1500°C溫度下加熱。經過這種加熱工序,溶劑、 結合劑、分散劑等物質汽化,最終只乘j下陶究粉末,由於 剩餘陶瓷粉末被燒結,所以粉末強度會提高。 第六種方法:透過以下步驟製備多組分混合粉末:誘 5導並使粒徑為0.1-3〇 μ_Α12〇#Υ2〇3粒子攜帶極性互不 相同的電荷;混合帶不同靜電的粒子以製成組成成分為 (AlxY^C^x的範圍是0.05_〇·95)的物質。僅僅以機械方式 混合Al2〇3粉末和γ2〇3粉末時,Al2〇3粉末和γ2〇.末混合 得不夠均勻。但是在第六種方法中,如第12圖所示,兩種 1〇粒子在特定酸鹼度(例如pH值為6)的溶劑中由於靜電作用 而形成塊,因而Α1ζ〇3和ΙΟ3可以混合得非常均勻。因此, 可製備品質優異的粉末。 其中,使粉末帶電的方法如下:為了使Αΐ2〇3帶負電 荷,在所述溶劑中添加聚甲基丙烯酸甲銨鹽(p〇ly_methyl 15 metacrylic am〇nium salt),而為了使Y203帶正電荷,在所述 洛劑中添加聚_醯亞胺(P〇ly_ethylen imide)。 所述製造方法的後序工序與噴霧乾燥法相同,只改變 了為進行噴霧乾燥的粉末之準備過程,因此本發明省略了 對後序工序的詳細說明。 20 將透過上述多種製造方法所合成的陶瓷粉末在 9〇(M50〇t的溫度下進行煆燒處理,以製備具有適當強度 的熱喷塗粉末。 另外’本發明實施例的陶瓷粉末合成方法中,當混合 Al2〇3粉末和Υ2〇3粉末時,為了使粉末比較容易混合,並使 21 200815624 混合的粒子均勻地分散,可使用溶劑和分散劑。而且,在 煆燒工序等後處理過程中,為保持其形狀,可使用錶合劑。 陶瓷合成過程中使用的溶劑是選自水、丙酮或異丙醇 (Isopmphylalchole)中的一種以上的混合液,而分散劑使用 5 咼分子聚合物(high molefcular polymer),結合劑可使用高分 子化合物(PVB76)或鄰苯二甲酸丁基苯曱醋(benZyi butyl phthalate)等。 第13圖表示用電子掃描顯微鏡觀察混合粉末的外形之 結果,所述混合粉末為利用本發明實施例的粉末製備方法 10製成的包含Al、Y、0元素的多組分混合粉末。 下面,詳細說明利用本發明實施例的粉末製備方法製 成的陶瓷粉末,形成塗層之方法。 本發明實施例的塗布方法包括熱噴塗法。熱喷塗法包 括以下步驟:向等離子體火焰注入陶瓷粉末進行加熱;將 15完全熔融或半熔融狀態的粉末層積在等離子體腔室部件 (以下簡稱“基材”)之表面上,以形成塗層。 首先,準備用於塗布的粉末。用於熱喷塗的陶瓷粉末 為本發明實施例的粉末,可使用粒徑為1-100 μιη的單一粉 末。而且,也可使用將幾十納米及幾微米(μιη)的一次微細 20 粉末凝聚成1]〇〇μηι大小的粉末。 其次,向等離子體火焰注入所述的單一粉末或凝聚粉 末。被注入的粉末被火焰加熱飛散,並層積在基材表面上。 之後,被層積的粉末急劇冷卻,而形成塗層。 為穩定地進行塗布作業,並為了提高塗布材料的特 22 200815624 性’可設定不同的作業條件。所述作業條件可根據使用設 備和所使用的塗布粉末的大小及種類而異。 實驗例 下面’透過實驗例進-步詳細說明本發明。本發明的 5實驗例中使帛了瑞士Plazmatek公司生產的“ρτ_8〇〇”電力施 加系統和美國Sulzer-Metco公司生產的“F4_HBS,,型等離子 體搶。而且’為形成等離子體使用了氮氣和氣氣,其使用 量分別控制在36L/分、礼/分。另外,將施加功率設定為 36Kw(600A,60V),將塗布粉末的注入速度設定為1〇g/分。 10並將等離子體槍和被塗部件之間的距離設定為約12〇mm左 右0 而且,本發明的實驗例中還使用了瑞士piazmatek公司 生產的“PT-800”電力施加系統和美國pmxair公司生產的 “SG-100”型等離子體槍,並將氬氣使用量設定為4〇L/分, -15將氦氣使用量設定為20L/分,將施加功率設定為25Kw,將 - 噴射距離設定為120mm。 B 首先,參照第13圖至第17圖,說明使用本發明實施例 的塗布粉末與使用純金屬氧化物(指Α1&γ氧化物)之間的 區別。 20 為了觀察在不同組成的粉末條件下,塗層中所形成的 非晶態程度,調節(Α1χγι·χ)2〇3中的X值而製備粉末,並使用 所生成的粉末透過熱喷塗法在腔室用基材上形成塗層。 第14圖表示透過等離子體熱喷塗法塗布純八丨2〇3粉末 而形成的塗層的X線衍射值。為了與本發明實施例的陶瓷粉 23 200815624 末進行比較,透過熱噴塗法塗布純……3粉末之後,對其χ 線衍射狀態進行了檢測。 如第14圖所示,當使用純A〗"3粉末時,在特定衍射角 度(第14圖表示為▽)下可觀察到高強度的峰值(peak)。這種 5高強度的峰值存在—定的反復結構時才能出現,由此可 見’當使用純ΑΙΑ粉末時,塗層内部將存在結晶態。 第15圖表示用成分為(Α1χΥ ι _χ)2〇3的塗布用粉末來進行 熱噴塗時,所形成的塗層之χ線分析結果,其中1為〇 9。 如第15圖所示,與比較物件第13圖不同,在特定衍射 角度下,J1不存在南強度的峰i。由此可見,(Αΐ〇9γ〇ι)2〇3 粉末適合形成本發明實施例的非晶態塗層。 、其次,將X值調整為〇·6,製備組成成分為(a1^YG4)2〇3 、私末之後,進行等離子體噴塗而形成塗層,並對該塗層 進行了X線分析。 第16圖疋組成成分為(Α1〇δΥ〇4)2〇3的塗層的X線分析結 可見,當X為0.6時,塗層仍是非晶態結構。 然後,將X值調整為(U,製備組成成分為(AkiY(>9)2〇3 的塗布粉末之後,進行了熱噴塗。 第Η圖疋組成成分為(AU^ 9)2。3的塗層之又線分析結 20 果 ^护 。如第17圖所示,在X轴的角度(2θ)3〇。和4〇。之間出現微 ^的峰值。由此可見,用(A1(uY()9)2〇3粉末所形成的塗層大 P刀开>成為非晶態,但是一部分形成為結晶態。 “另外,第18圖表示透過等離子體熱噴塗法塗布純¥2〇3 r束而形成的塗層的X線衍射值。為了與本發明實施例的陶 24 200815624 £粉末進行比較,透過等粒子體熱喷塗法塗布純y2〇3粉末 之後,利用X線分析設備測定其衍射狀態。 由第18圖可見,在特定角度下出現較強的峰值。由此 可見,如上述說明,利用純他塗布時,A部分都形成為 5 結晶態。 另外’透過由純Α1Λ形成的塗層與由純ΥΛ形成的塗 層的X線衍射之比較結果可知,不僅結晶態峰值的位置不 同,而且由純Α1203形成塗層時,整體上衍射峰值的強度 低,與此相反,由純Υ2〇3形成塗層時,在3〇。_4〇。之間可檢 10 測到更大的值。 這說明,由純Α1203形成的塗層並不會形成完整的結晶 態,而會形成與其混雜在-起的一部分非晶態態結構。由 此可見,與Υ2〇3相比,Α12〇3更容易形成非晶態。即,為了 更容易形成非晶態,優選將兀的範圍設定為MW,在此情 15 況下,Α1成分多於γ。 從上述實驗例可知,(Α1χΥι χ)2〇3中,當χ值在〇 Μ.9的 可變範圍内時,可形成優質的非晶態塗層。 其次,參照第19圖說明,在熱噴塗i程中,根據塗布 條件的變化可能會產生的缺陷。 2〇 帛19圖表示利用本發明實施例的粉末進行等離子體熱 噴塗所形成的塗層之X線分析結果。在此,所使㈣是具有 (A10.6YG.4)2Q3組成的粉末,該組簡合本發明祕件,但是 其在低的等離子體溫度條件下,或者在粉末未完全溶融的 狀態下進行了熱喷塗。 25 200815624 如第19圖所示,整體上看,在部分角度下形成峰值。 因此可以看出,在非晶態結構中混雜一些結晶態。這是因 為熱喷塗時,由於等離子體溫度低或者粉末未完全熔融等 原因’粉末中的結晶態直接傳到塗層的結果。 5 另外,在塗布過程中,當基材或塗布表面的溫度高到 可使非晶態經過相變而轉移到結晶態時,一部分非結晶態 也會經過相變而轉移到結晶態,從而形成非晶態與結晶態 相混合的結構。 在上述條件下所形成的塗層中大部分為非晶態,並在 10其中为散有一部分結晶態,且塗層内部未形成氣孔及攤片 的介面間隙。可見,即使形成塗層時條件不夠充分,但是 與使用純A1或純γ氧化物的塗層相比,在上述條件下形成的 塗層更具有優異的特性。 下面,參照第20圖至第22圖,說明本發明第一實驗例 15的塗層。在第一實驗例中,先製備組成成分為(A1〇 78Yq 2士〇3 的多組分粉末後,使用内部形式的等離子體搶形成非晶態 塗層。以下,將本發明第一實驗例的非晶態塗層稱為 AmorMl 〇 第20圖及第21圖是對AmorMl塗層的剖面進行鏡面處 20理之後,透過電子掃描顯微鏡觀察的結果。第20圖及第21 圖中雖然發現了少許龜裂現象,但是並沒有觀察到通常的 熱喷塗結晶態塗層中常見的攤片内部的縱向龜裂及攤片間 缝隙。 第22圖為用高倍率投射電子顯微鏡觀察AmorMl非晶 26 200815624 悲塗層的結果。從第22圖中可以確認,AmorM1塗層具有非 結晶結構。 下面,透過第23圖說明本發明第二實驗例的塗層。 第二實驗例中,製備了組成成分為(八1() 625¥() 375)2〇3的 - 5多組分粉末,並使用内部形式的等離子體槍形成非晶態塗 - 層。以下,將本發明第二實驗例的非晶態塗層稱為AmorM2。 - 第23圖是對所述AmorM2塗層的剖面進行鏡面處理之 後’拍攝到的電子掃描顯微鏡照片。如第23圖所示,AmorM2 0 具有與第22圖的A讀Ml塗層類似的形狀。#,並未產生攤 10片内部的縱向龜裂及攤片間的縫隙。 另外’本發明第三實驗例的塗層雖然與Am〇rM2組成成 为相同,但採用的是為使Al2〇3粉末和Y203粉末均勻分散, 誘$並使其分別攜帶負電荷及正電荷之後混合的方法。 第24圖表不用電子掃描顯微鏡觀察第三實驗例的塗層 15』面之結果。從圖中可見,由於採用了靜電混合的方法, • 倾用粉末在所有的部分都保持均勻的組成 ,所以沒有形 _ 祕片介面,從而形成了優質的塗層。 而且,從第24圖中可知,部分結晶態粒子分散在被塗 部件的表面(照片中的下部)。這是由於等離子體火焰的溫度 20低,未完全炼融粉末中的結晶態,或者由於被塗部件表面 及基材的溫度過而,從而導致非晶態物質經過相變轉移到 結晶態的結果。 下面,參第25圖至第28圖,說明AmorMmmorM2 塗層的機械、化學特性。第圖至第Μ圖表示八丽⑽和 27 200815624As shown in Figure 5, 2 = 41 ^ __ because of the melting of the powder, the powder is layered in the material to capture multiple cracks. In the case of thermal spraying, the surface of the dissolved H) surface is detailed and cooled to produce a sheet. The combination of the night I, the pottery of the pottery (such as Y and 〇 in him) is compared Λ ^ and the order of the elements is also kept irregular. Such a = if it cools below the melting point (Τ-), it becomes solid, and the bond between the groups of the elements becomes tight, and the element is arranged in a 15 regular crystal state. As described above, when performing thermal spraying, in the process of cooling and disintegrating the powder on the substrate table and cooling, the molten ceramic powder is transferred to a crystalline state by phase transformation, and the crystalline state causes the wafer to be spread. Form a crack. Figure 6 shows the conditions for crystallization based on time and 20 temperatures when the pottery material is cooled below the melting point. The ceramic has the fastest phase transition velocity near a certain temperature (e.g., Tm in Fig. 6), which rapidly changes to a crystalline state at this temperature. In the process from liquid to solid, if the cooling time is shorter than the time required for crystallization at this temperature (shown as t〇* in Fig. 6), the crystalline state cannot be formed. Therefore, the ceramic material 16 200815624 is converted into an irregular solid amorphous state between the constituent elements as in the liquid state. Fig. 7 shows the change in volume when the liquid substance is cooled to become a crystalline solid. 5 When the temperature drops, the ceramic material shrinks due to the shortening of the distance between adjacent atoms of its constituent elements, and when the crystalline state of the constituent elements is formed, the volume will suddenly become smaller (such as Λν in Fig. 7). ). The volume is so small that it is the cause of the internal cracks and interface gaps in the thermal spray process. Figure 8 shows the formation of such a defect. 10 In order for the liquid molten ceramic to be solidified by cooling, it is necessary to arrange the constituent elements to a predetermined position. Therefore, the more the types of constituent elements, the more complicated the atomic arrangement of the crystalline state, and the various types of elements need to be moved to their respective positions, so the arrangement takes a long time. Therefore, as shown in Fig. 9, if the type of constituent elements is increased, AmorM (representing amorphous materials) is composed of (ΑΐχΥι_χ) 2〇3 (X). The general term for the amorphous coating material in the range of 0·05_〇95), hereinafter referred to as "AmorM" as the amorphous material, takes a longer time to form a crystalline state at the same temperature. Therefore, AmorM is more likely to be formed into an amorphous state. The coating material of the embodiment of the present invention includes a multi-component ceramic, and as shown in Fig. 9, it takes a long time to form crystal sorrow. That is, it is easy to form an amorphous state during thermal spraying. Moreover, the coating of the embodiment of the present invention utilizes the multi-component ceramic of the embodiment of the present invention to make most of the coating amorphous. At this time, the coating layer at least 17 200815624 - 5 preferably comprises more than 50% of the amorphous state, and preferably forms an amorphous state of 1%. The amorphous state in the coating is less than 50%, which is equivalent to containing more than 50% of the crystalline state. Therefore, as described above, in the process of converting from a liquid state to a crystalline solid, the volume thereof is greatly changed, and defects are generated in the coating. Fig. 10 shows the change in volume when changing from a liquid phase to an amorphous state. As shown in Fig. 10, when it changes from a liquid state to an amorphous state, its volume does not change drastically. The reason for this is that the atomic arrangement of the amorphous solid is almost the same as the arrangement of atoms in the liquid state. Therefore, by forming the coating layer using the multi-component ceramic coating material of the present invention, an amorphous structure solid is formed, so that the volume does not drastically shrink at a specific temperature of 10. Therefore, internal defects such as longitudinal cracks and interface gaps in the sheet due to volume shrinkage when the liquid phase changes to a crystalline solid are not generated. The 11th Hall represents the process of changing from a liquid phase to an amorphous solid state. _ 15 • Next, the coating material forming the coating layer of the embodiment of the present invention will be described in detail. In order to easily form an amorphous coating layer, the coating material of the present embodiment includes a multi-component ceramic material, and this multi-component ceramic material contains three or more elements. 20 The multi-component ceramic material may use a multi-component ceramic material comprising Al, Υ, and 〇, which are constituent elements of Al2〇3 and Y2〇3. The compositional element ratio of the multi-component ceramic material preferably satisfies the chemical formula (A1xY "x) 2 〇 3 (x is 〇·〇5-〇·95). If the X value is less than 0.05 or greater than 〇·95 ' In the process of forming a coating layer using the prepared powder, a 100% amorphous coating layer cannot be formed, thereby causing deterioration of physical and chemical properties such as deterioration in corrosion resistance, wherein the content of oxygen element can be based on thermal spray. 18 200815624 Change in temperature, spray distance, etc. of the flame during coating. Next, a method of preparing the multi-component ceramic material of the embodiment of the present invention is explained. The multi-component ceramic material of the present invention can be permeable to the following ceramics - 5 The method is made into a powder. One method of the ceramic synthesis method is to remove the unnecessary elements by heat treatment after mixing the chemicals containing A1 and Y, thereby finally preparing a powder composed of the elements A, Y, and yttrium. Among them, the chemical substance containing A1 is _Al(OH)3, ai(c3h5o3)3, A1(C18H3302)3, A1(C15H31C00)3, 10A12(S〇4)3, etc., and the chemical substance containing Y is Y2. (C03) 33H20, y2 (s〇4) 3 8H20, etc. The method for preparing the ceramic powder is described in detail in one step. The first method: firstly, the chemical substance containing A1 and Y is mixed to form (AlxYkhC^x is 0.05-0.95). Secondly, it is heated at a high temperature. The unstable substance other than Α1-Υ-0 is decomposed and removed by -15 to remove impurities such as c, -Η, 0, etc. W The second method: after dissolving the chemical substance in a solvent such as water or ethanol Heating to prepare a Α1-Υ-0 powder having a composition of (AlxYkMMx of 0.05-0.95). 2〇 The third method: first preparing a mixed powder of ruthenium metal and ruthenium metal having a particle diameter of Μ00 μηι, or Α1 and Υ After the alloy powder, the mixed powder is subjected to an oxidation treatment to synthesize the powder. Among them, when the ruthenium metal is in contact with oxygen at a normal temperature, the surface thereof is also oxidized to form ΑΙ2Ο3, which is for the purpose of facilitating oxidation reaction. It can increase the temperature and accelerate the oxidation reaction rate of 19 200815624 degrees. Moreover, it is also possible to make A1 metal powder to increase the reaction area. Not only A1 metal powder, Y metal powder and Ai and γ alloy powder can also pass through A1 The high-temperature oxidation method of the metal powder is oxidized in the same manner to prepare (A1203)x(Y2〇3)1-x ceramic. 5 Fourth method: After mixing the A1 metal and Y metal powder, the mixed powder is oxidized The treatment is carried out to prepare a bulk-like ceramic, which is then pulverized to obtain a powder having a particle diameter of 100 μm or less. This synthesis method is the same as the above-described high-temperature oxidation method, and is a method of oxidizing a metal element at a high temperature to form an oxide. The high-temperature oxidation method described above oxidizes the powder, and the one-step method oxidizes agglomerates having a particle diameter of several millimeters (mm) or several centimeters (cm). The problem of increased cost, but regardless of the size or shape of the metal alloy, if oxidation is performed in the bulk state, the ceramic material can be produced at a low price. The fifth method comprises mixing 粒径1_3〇 particles and ίο; particles to prepare a substance having a composition of (Α1χΥΐχ)2〇3 (4〇•(4)·95), and spray-drying to prepare Α1. A dry synthetic powder of γ, 〇 element and particle size Η00. The fifth method towel is prepared by preparing Αΐ2〇3, γ2()3 powder into a component f of ^^203 (χ 〇.〇5_G 95), and then combining with a solvent, a binder, a granule, etc. . Job, use 7 please. c is a gas jet such as air, or a fine groove is formed in a disk that rotates at a high speed, and is sprinkled through the groove to produce a powder having a particle diameter of 1 to 200 μm. The powder produced by this method is also required to be heated at a temperature of 900-1500 ° C due to its weak strength. After this heating process, the solvent, the binder, the dispersant and the like are vaporized, and finally the powder is simply taken up by j, and since the remaining ceramic powder is sintered, the powder strength is improved. The sixth method: preparing a multi-component mixed powder by the following steps: inducing a 5-lead and making a particle size of 0.1-3 〇μ_Α12〇#Υ2〇3 particles carrying different charges of different polarities; mixing particles with different static electricity to make The composition is a substance (the range of AlxY^C^x is 0.05_〇·95). When the Al2〇3 powder and the γ2〇3 powder were merely mechanically mixed, the Al2〇3 powder and the γ2〇 powder were not uniformly mixed. However, in the sixth method, as shown in Fig. 12, the two 1 〇 particles form a block due to static electricity in a solvent having a specific pH (for example, pH 6), so Α1ζ〇3 and ΙΟ3 can be mixed very much. Evenly. Therefore, a powder of excellent quality can be prepared. Wherein, the method of charging the powder is as follows: in order to make Αΐ2〇3 negatively charged, polymethylammonium salt (p〇ly_methyl 15 metacrylic ammonium salt) is added to the solvent, and in order to make Y203 positively charged Adding polypyridinium (P〇ly_ethylen imide) to the agent. The subsequent step of the production method is the same as the spray drying method, and only the preparation process for the powder for spray drying is changed. Therefore, the detailed description of the subsequent steps is omitted in the present invention. 20 The ceramic powder synthesized by the above various manufacturing methods is subjected to calcination treatment at a temperature of 9 Torr (M50 〇t) to prepare a thermal spray powder having an appropriate strength. Further, in the ceramic powder synthesis method of the embodiment of the present invention When the Al 2 〇 3 powder and the Υ 2 〇 3 powder are mixed, a solvent and a dispersing agent may be used in order to make the powder relatively easy to mix and uniformly disperse the particles mixed in 21 200815624. Moreover, in the post-treatment process such as a simmering process In order to maintain its shape, a surface agent can be used. The solvent used in the ceramic synthesis process is a mixture of one or more selected from the group consisting of water, acetone or isopropoxide (Isopmphylalchole), and the dispersant uses 5 咼 molecular polymer (high For the binder, a polymer compound (PVB76) or benzyi butyl phthalate or the like can be used. Fig. 13 shows the result of observing the appearance of the mixed powder by an electron scanning microscope, the mixing The powder is a multi-component mixed powder containing Al, Y, and 0 elements produced by the powder preparation method 10 of the embodiment of the present invention. The method for forming a coating by using the ceramic powder prepared by the powder preparation method of the embodiment of the invention. The coating method of the embodiment of the invention comprises a thermal spraying method. The thermal spraying method comprises the steps of: injecting ceramic powder into a plasma flame for heating. A powder of 15 completely molten or semi-molten state is laminated on the surface of a plasma chamber member (hereinafter referred to as "substrate") to form a coating. First, a powder for coating is prepared. For thermal spraying The ceramic powder is a powder of the embodiment of the present invention, and a single powder having a particle diameter of 1-100 μm can be used. Further, it is also possible to use a primary fine 20 powder of several tens of nanometers and several micrometers (μιη) to be condensed into 1] 〇〇μηι. Next, the single powder or agglomerated powder is injected into the plasma flame. The injected powder is heated by the flame to be scattered and laminated on the surface of the substrate. Then, the laminated powder is rapidly cooled to form Coating. In order to carry out the coating work stably, and to improve the properties of the coating material, different working conditions can be set. Depending on the size and type of the equipment to be used and the coating powder to be used, the present invention will be described in detail below by way of an experimental example. In the fifth experimental example of the present invention, "ρτ_8" produced by the company Plazmatek of Switzerland was used. 〇” Power application system and “F4_HBS, type plasma grab” produced by Sulzer-Metco, USA. “The use of nitrogen and gas for the formation of plasma is controlled at 36L/min, rit/min. The applied power was set to 36 Kw (600 A, 60 V), and the injection speed of the coating powder was set to 1 〇g/min. 10 The distance between the plasma gun and the member to be coated was set to about 12 〇mm or so. In the experimental example of the present invention, the "PT-800" power application system produced by the Swiss piazmatek company and the "SG-100" type plasma gun manufactured by the US pmxair company were also used, and the argon gas usage amount was set to 4 〇L/ Minutes, -15 set the helium usage to 20 L/min, the applied power to 25 Kw, and the -spray distance to 120 mm. B First, the difference between the coating powder using the embodiment of the present invention and the use of a pure metal oxide (finger 1 & gamma oxide) will be described with reference to Figs. 13 to 17 . 20 In order to observe the degree of amorphous state formed in the coating under different powder conditions, the powder was prepared by adjusting the X value in (Α1χγι·χ)2〇3, and the generated powder was passed through the thermal spraying method. A coating is formed on the substrate for the chamber. Fig. 14 is a view showing X-ray diffraction values of a coating layer formed by coating a pure erbium 2 〇 3 powder by plasma thermal spraying. In order to compare with the ceramic powder 23 200815624 of the embodiment of the present invention, the pure ... 3 powder was applied by thermal spraying, and the enthalpy diffraction state was examined. As shown in Fig. 14, when a pure A "3 powder was used, a high intensity peak was observed at a specific diffraction angle (shown as ▽ in Fig. 14). This peak of 5 high intensities can occur in the presence of a repeating structure, whereby it can be seen that when a pure tantalum powder is used, there will be a crystalline state inside the coating. Fig. 15 is a view showing the result of the crepe analysis of the coating layer formed by thermal spraying using a coating powder having a composition of (Α1χΥ ι _χ) 2〇3, wherein 1 is 〇 9. As shown in Fig. 15, unlike the comparative object Fig. 13, at a certain diffraction angle, J1 does not have a peak i of the south intensity. Thus, it can be seen that the (Αΐ〇9γ〇ι) 2〇3 powder is suitable for forming the amorphous coating of the embodiment of the present invention. Next, the X value was adjusted to 〇·6, and the composition was (a1^YG4)2〇3, and after blistering, plasma spraying was performed to form a coating, and the coating was subjected to X-ray analysis. Figure 16 X-ray analysis of a coating composition of (Α1〇δΥ〇4)2〇3 It can be seen that when X is 0.6, the coating is still amorphous. Then, the X value was adjusted to (U, and a coating powder having a composition of (AkiY (> 9) 2 〇 3 was prepared, and then thermal spraying was performed. The composition of the figure 为 is (AU^ 9) 2. 3 The parallel analysis of the coating is carried out. As shown in Fig. 17, the peak of the micro-^ appears between the angle of the X-axis (2θ) 3〇 and 4〇. It can be seen that (A1( uY()9) The coating formed by the powder of 2〇3 powder is large and becomes amorphous, but a part thereof is formed into a crystalline state. "In addition, Fig. 18 shows that pure PET is applied by plasma thermal spraying. The X-ray diffraction value of the coating formed by the 3 r beam. For comparison with the ceramic 24 200815624 £ powder of the embodiment of the present invention, the pure y2〇3 powder was coated by the isotherm thermal spraying method, and the X-ray analysis apparatus was used. The diffraction state was measured. It can be seen from Fig. 18 that a strong peak appears at a specific angle. Thus, as described above, when it is coated by pure coating, part A is formed into a 5 crystal state. The comparison between the formed coating and the X-ray diffraction of the coating formed of pure tantalum shows that not only the position of the peak of the crystalline state is not Similarly, when the coating is formed from pure ruthenium 1203, the intensity of the diffraction peak as a whole is low. On the contrary, when the coating is formed from pure ruthenium 2〇3, it can be detected at a ratio of 3 〇. 〇4 〇. This indicates that the coating formed by pure ruthenium 1203 does not form a complete crystalline state, but forms a part of the amorphous state structure mixed with it. It can be seen that Α12〇3 is compared with Υ2〇3. It is easier to form an amorphous state. That is, in order to more easily form an amorphous state, it is preferable to set the range of 兀 to MW, and in this case, the Α1 component is more than γ. From the above experimental example, (Α1χΥι χ) 2 In 〇3, when the χ value is within the variable range of 〇Μ.9, a high-quality amorphous coating can be formed. Next, referring to Fig. 19, in the thermal spraying process, depending on the coating conditions, it is possible Defects that may occur. Figure 2 is a graph showing the results of X-ray analysis of a coating formed by plasma thermal spraying using the powder of the embodiment of the present invention. Here, (4) is (A10.6YG.4) 2Q3 a composition of powders, the set is simple with the secrets of the invention, but at low plasma temperatures Under the conditions, or in the state where the powder is not completely melted, it is thermally sprayed. 25 200815624 As shown in Fig. 19, as a whole, a peak is formed at a partial angle. Therefore, it can be seen that the mixture is mixed in the amorphous structure. Some crystalline states. This is because the thermal state of the plasma is directly transmitted to the coating due to low plasma temperature or incomplete melting of the powder. 5 In addition, during the coating process, when the substrate or When the temperature of the coated surface is so high that the amorphous state undergoes a phase transition and is transferred to a crystalline state, a part of the amorphous state undergoes a phase transition and is transferred to a crystalline state, thereby forming a structure in which the amorphous state and the crystalline state are mixed. Most of the coating layer formed under the above conditions is amorphous, and in 10 is a part of the crystalline state, and the interstitial space of the pores and the tabs is not formed inside the coating. It can be seen that even if the conditions for forming the coating are insufficient, the coating formed under the above conditions has more excellent characteristics than the coating using pure Al or pure γ oxide. Next, the coating of the first experimental example 15 of the present invention will be described with reference to Figs. 20 to 22. In the first experimental example, after preparing a multi-component powder having a composition of (A1〇78Yq 2士〇3, an internal coating was used to form an amorphous coating. Hereinafter, the first experimental example of the present invention will be employed. The amorphous coating is called AmorMl. Fig. 20 and Fig. 21 are the results of observation by electron scanning microscopy after the cross section of the AmorMl coating is mirrored. Although it is found in Fig. 20 and Fig. 21 A little cracking phenomenon, but the longitudinal cracks and gaps between the sheets in the common thermal sprayed crystalline coatings were not observed. Figure 22 is a high-magnification projection electron microscope to observe AmorMl amorphous 26 200815624 Results of the sad coating. It can be confirmed from Fig. 22 that the AmorM1 coating has an amorphous structure. Next, the coating of the second experimental example of the present invention will be described through Fig. 23. In the second experimental example, the constituents were prepared. It is (8: 1) 625 ¥ () 375) 2 〇 3 - 5 multi-component powder, and an amorphous coating layer is formed using an internal plasma gun. Hereinafter, the second experimental example of the present invention The crystalline coating is called AmorM2. - Figure 23 is A photograph of the electron scanning micrograph taken after mirroring the cross section of the AmorM2 coating. As shown in Fig. 23, AmorM20 has a shape similar to the A reading M1 coating of Fig. 22. #, does not produce 10 pieces of internal longitudinal cracks and gaps between the sheets are spread. Further, the coating of the third experimental example of the present invention is the same as the composition of Am〇rM2, but is used to uniformly disperse Al2〇3 powder and Y203 powder. , a method of absorbing $ and carrying a negative charge and a positive charge, respectively. The 24th chart does not use an electron scanning microscope to observe the result of the coating of the third experimental example. It can be seen from the figure that due to electrostatic mixing Method, • The powder is kept in a uniform composition in all parts, so there is no shape interface, which forms a high-quality coating. Moreover, as shown in Fig. 24, partially crystalline particles are dispersed in the coated part. Surface (lower part of the photo). This is due to the low temperature of the plasma flame 20, the incompletely condensed crystalline state in the powder, or due to the temperature of the surface of the coated part and the substrate. The result of the phase transition of the amorphous material to the crystalline state. The following is a description of the mechanical and chemical properties of the AmorMmmor M2 coating, as shown in Figures 25 to 28. The figures to the figure show Ba Li (10) and 27 200815624

AmorM2塗層與使用常規的γ2〇3、a12〇3粉末所製成的塗層 的機械、化學特性之比較結果。 第25圖表示本發明實施例的塗層和利用八〗及丫氧化物 所形成的塗層之機械強度的測定結果。以下,將利用义氧 5 化物製成的塗層稱為比較例1,利用Υ氧化物製成的塗層稱 為比較例2。 如弟25圖所示,AmorMI和AmorM2非晶態塗層與比較 例2相比’其硬度值提高75〇%·1〇〇%,並具有與機械強度 優秀的比較例1類似的硬度值。 1〇 第26圖表示本發明實施例的塗層和比較例塗層的抗劃 性測定結果。 如第26圖所示,AmorMl和AmorM2非晶態塗層與比較 例2相比’具有高達1〇倍以上的抗劃性。測定抗劃性時,透 過尖銳的鑽石尖端施加30N的力量劃傷塗層表面之後,測定 15 劃痕的深度。 第27圖表示本發明實施例的塗層和比較例的塗層之耐 腐蝕性測定結果。 如第27圖所示,AmorMl和AmorM2非晶態塗層對HC1 等酸性化學物質也具有很好的耐腐蝕性。曲線圖的Y軸表示 2〇腐餘後的品質減少。本發明實施例的塗層與比較例2相比, 其品質減少了 1/5。因此可見,其腐蝕反應速度為比較例2 的1/5左右。耐腐蝕性的測定,採用了在常温條件下,將被 、塗部件浸潰在濃度為2N的HC1溶液中24小時,取出之後测 定品質減少量的方法。 28 200815624 第28圖表示本發明實施例的等離子體真空腔室的财久 性測定結果。 參照第28圖,本發明實施例的塗層對等離子體環境的 耐久性,與比較例1相比優異5倍以上。對耐久性的評價, 5採用了透過半導體製造設備之一,即等離子體钕刻設備, 並使用CF4+〇2氣體來蝕刻被塗部件之後,測定姓刻深度的 方法。 耐久性測定條件具體說明如下。 以Si〇2每分鐘被蝕刻100nm的條件為基準,即將(^心氣 10 體注入速度设》為 3〇sccni(standard cubic centimeters per minute),02氣體注入速度設定為6sccm,對主電極的輸入功 率設定為900W,偏置功率設定為90W,钕刻腔室壓力設定 為5mtorr,並將腔室内部溫度保持在25°C。 表1中比較了比較例1及比較例2的塗層和本發明實施 15 例的塗層的特性。表1中的資料是在上述耐久性測定條件下 進行測定的結果。 表1 試料特性 比較例1(Α12〇3) 比較例2(Υ2〇3) 實施例 (AmorM) 硬度(Hv.200g) 800-850 300(1)-500⑹ 700-750 劃痕深度 (Scratch Depth, μηι) 1 10(E)-22(I) 1.2 耐腐#性(g/g) — 0.55 0.09-0.11 ICP等離子體耐腐d 性(nm/min) 9.5 1.7-1.8 1.6-1.9 缺陷(攤片介面縫 隙,氣孔) 有 有 良好 如表1所示,本發明實施例的塗層硬度與比較例1相 29 200815624 似,耐腐蝕性與比較例2相似或者比它優異,因而本發明實 =例的塗層不僅具有—般塗層的優點,而且不會容易產生 其他缺陷。因此,本發明實施例的塗層與比較例相比,具 有優異的物理、化學特性。 另外,為了更詳細地說明本發明的優異特性,在腐蝕 性較強的條件下進行了等離子體真空腔室的耐久性實驗。 表2 • 塗布 變數 例4 D (mm) —— Ar (Psi) --- 30 He (psi) 115 粉末 供給 速度 (RPM) 3 載氣 供給 速度 _(psi) 20 電流 ㈧ ΟΠΑ 電壓 (V) 39.5 ^離子體搶 >描速度 (mm/sec) 實驗 yuu 例5 150 40 65 3 20 37.3 1000 40 85 3.5 50 40.8 用於本實驗的組成成分與AmorM2的組成成分相同,且 /、衣備成粒徑大小為1〇_ 6〇 μηι的粉末。而且,根據所述表2 10的比較例及實驗例的條件製造塗層。 ^第29圖表示本發明實驗例3的塗層的X線分析結果。從 第29圖中可以觀察到多個峰值,塗層整體上是非晶態,但 是也存在部分結晶態。 第30圖及第31圖分別表示按照本發明實驗例4及實驗 15例5的條件製成的塗層之X線分析結果。從第30圖及第31圖 中可以觀察到,實驗例4及實驗例5與實驗例3不同,在該條 件下形成幾乎100%的非晶態。 在测試抗腐蝕性之前,首先對各實驗例的塗層進行了 硬度测試。塗層硬度透過將負重設定為200g的維氏硬度計 2〇進行了測定。其測試結果如表3所示。 30 200815624 表3 條件_ 實驗例4 實驗例5 實驗例6 硬度值(Hv) 645 593 750 表3的結果顯示,產生部分結晶悲的實驗例4的硬度與 實驗例5及實驗例6相似,塗層在整體上形成非晶態時,即 - 使包含部分結晶態,也不會對硬度產生太大的影響。 „ 5 另外,塗層由100%的非晶態構成·,即塗層内部未形成 氣孔而緊密構成時,硬度值會增加。因此,如同實驗例5及 • 實驗例6所示,由100%的非晶態構成的塗層,其硬度值也 會根據塗布條件發生變化。 其次,如上所述,在易於發生腐#的條件下,測定了 10 各塗層的耐腐蝕性。 該實驗是在Si〇2以300nm/分的速度被蝕刻的條件下進 行的。具體而言,將CF4氣體的注入速度設定為40sccm, 〇2的注入速度設定為lOsccm,主電極的輸入功率設定為 1000W ’偏置功率設定為150W,餘刻腔室内的壓力設定為 _ 15 5mton·,並將腔室内部溫度保持在25°C。而且,將暴露於等 離子體環境中的時間設定為1小時。 比較例1 比較例2 實驗例4 實驗例5 實驗例6 平均蝕刻速度 (nm/min) 77.2 20.22 15.83 10.5 3.58 第32圖及第33圖表示透過電子掃描顯微鏡觀察蝕刻_ 驗前後的塗層表面的結果。第32圖表示蝕刻前的塗層表 面,第33圖表示蚀刻後的塗層表面。觀察結果如表4所示。 20 表 4 ____ 31 200815624 從表4的平均#刻速度來看’本發明實驗例的蝕刻速度 大大慢於比較例。由此可見,本發明實施例的塗層在強氧 化條件下,也具有很強的耐久性。實驗例4是形成部分結晶 態的實驗例’其與由100%的非晶態構成的實驗例$及實驗 5例6相比,顯示出較快的蝕刻(腐蝕)速度。可見,只有在塗 層構成100%的非晶態的情況下,才能最有效地防止腐蝕。 而且,對表1和表4的結果進行比較可以得出,在較弱 的腐钱環境(以Si〇2為基準時,腐钮速度為1〇〇nm/分)下,本 發明實施例的塗層與比較例2相比時,其腐蝕速度相差無 1〇幾,但是在較強的腐蝕環境(以Si〇2為基準時,腐蝕速度為 300nm/分)下,本發明實施例的塗層表現出遠遠慢於比較例 2的腐蝕速度。可見,本發明實施例的塗層在強腐蝕性環境 下’仍然具有非常優異的耐腐姓性。 另外,本發明可進一步包括形成金屬中間層的步驟, 15其目的在於提高熱噴塗的粘結強度。本發明還可進一步包 括透過逐次改變基材和被塗部件的組成成分,形成多個塗 層的步驟(梯度塗層的形成方法)。 在基材上形成金屬中間層,從而在塗布與基材的物理 化學特性不同的材料時,也能夠解決塗層因其介面脆弱而 2〇 容易剝離的問題。 在本發明實施例的塗層及被塗部件之間,可透過下述 方法形成中間層之後,塗布本發明的非晶態材料。丨)在鋁 基材上塗布Zr〇2時,可使用熱膨脹係數小的NiCrAiγ等物質 來形成中間層。2)在鋁金屬上可使用強度高、耐腐蝕性優 32 200815624 秀的FeCr類非晶態金屬來形成中間層。在金屬基材上, 可使用Cr、Ni、Fe或包括所述金屬的合金來形成中間層。 4)在Al2〇3、Si、Si〇2等基材上,可以使用相同物質來形成 中間層之後,塗布本發明的非晶態材料。 5 如此,透過本發明的金屬中間層的形成方法,可防止 塗層的剝離,並可進一步提高耐腐蝕性。 另外,本發明實施例的塗層及部件之間可以不具備斷 續的第二塗層(中間層),而是採用梯度塗層,具體而言,準 備與基材相同或類似的物質粉末之後,在塗布過程中逐漸 10增加本發明非晶態塗布材料的含量。利用此種方法可提高 塗層的财久性。 而且,可採用與其它的塗層形成技術聯用,或者在部 分熱噴塗塗層上使用本發明的非晶態塗層等方式的改良技 術0 15 上面對本發明的優選實施例進行了說明,但是本發明 並不局限於此,在本發明的申請專利範圍、發明内容及圖 示範圍内所作的各種修飾及變更,均屬於本發明的保護範 圍。 L圖式簡翠明;3 20 第1圖係為半導體製造設備之一的等離子體蝕刻設備 的縱剖視圖。 第2圖係為等離子體熱喷塗設備之等離子體搶的剖面 不意圖 第3圖係為利用外部形式的等離子體槍所形成之 33 200815624 YA(氣伙)轉邮㈣诗描賴鏡照片。 塗等_⑽成之桃 塗曰σ面的电子掃描顯微鏡照片。 弟5圖係為用以顯示液離 〜奋融陶究粒子在冷卻時產生 龜雀的包子掃描顯微鏡照片。 弟6圖係為液態物質纟 時間產生結晶化現象^t 曰化見象的條件模式圖。Comparison of mechanical and chemical properties of AmorM2 coatings with coatings made using conventional γ2〇3, a12〇3 powders. Fig. 25 is a view showing the measurement results of the mechanical strength of the coating layer formed by the embodiment of the present invention and the coating layer formed by using the yttrium oxide and the cerium oxide. Hereinafter, a coating layer made of a sulfoxide compound is referred to as Comparative Example 1, and a coating layer made of cerium oxide is referred to as Comparative Example 2. As shown in the figure of Fig. 25, the AmorMI and AmorM2 amorphous coatings were improved in hardness value by 75 % by % to 1% by comparison with Comparative Example 2, and had hardness values similar to those of Comparative Example 1 excellent in mechanical strength. Fig. 26 is a graph showing the results of the scratch resistance measurement of the coating of the examples of the present invention and the coating of the comparative example. As shown in Fig. 26, the AmorMl and AmorM2 amorphous coatings had a scratch resistance of up to 1 〇 or more as compared with Comparative Example 2. When the scratch resistance was measured, the depth of the scratch was measured after applying a 30 N force to the surface of the coated surface by a sharp diamond tip. Fig. 27 is a graph showing the results of measurement of corrosion resistance of the coating layers of the examples of the present invention and the coatings of Comparative Examples. As shown in Figure 27, AmorMl and AmorM2 amorphous coatings also have good corrosion resistance to acidic chemicals such as HC1. The Y-axis of the graph indicates the reduction in quality after 2 〇. The coating of the examples of the present invention was reduced in quality by 1/5 compared with Comparative Example 2. Therefore, it can be seen that the corrosion reaction rate is about 1/5 of Comparative Example 2. The corrosion resistance was measured by immersing the coated member in an HCl solution having a concentration of 2 N for 24 hours under normal temperature conditions, and measuring the amount of quality reduction after taking out. 28 200815624 Figure 28 shows the results of the long-term measurement of the plasma vacuum chamber of the embodiment of the present invention. Referring to Fig. 28, the durability of the coating layer of the embodiment of the present invention to the plasma environment was 5 times or more superior to that of Comparative Example 1. For the evaluation of durability, 5 is a method of measuring the depth of a surname after etching a coated member by using one of semiconductor manufacturing equipment, that is, a plasma engraving apparatus, and using CF4 + 〇2 gas. The durability measurement conditions are specifically described below. Based on the condition that Si〇2 is etched by 100 nm per minute, the (injection speed of 10) is 3〇sccni (standard cubic centimeters per minute), the gas injection rate of 02 is set to 6sccm, and the input power to the main electrode. Set to 900 W, the bias power was set to 90 W, the squeezing chamber pressure was set to 5 mtorr, and the chamber interior temperature was maintained at 25 ° C. The coatings of Comparative Example 1 and Comparative Example 2 and the present invention were compared in Table 1. The characteristics of the coating of 15 examples were carried out. The data in Table 1 are the results of the measurement under the above-described durability measurement conditions. Table 1 Sample Characteristics Comparative Example 1 (Α12〇3) Comparative Example 2 (Υ2〇3) Example ( AmorM) Hardness (Hv.200g) 800-850 300(1)-500(6) 700-750 Scratch Depth, μηι 1 10(E)-22(I) 1.2 Corrosion resistance#(g/g) — 0.55 0.09-0.11 ICP plasma corrosion resistance d (nm / min) 9.5 1.7-1.8 1.6-1.9 defects (wrap interface gap, pores) There are good as shown in Table 1, the hardness of the coating of the examples of the present invention Comparative Example 1 Phase 29 200815624, the corrosion resistance is similar to or superior to that of Comparative Example 2, and thus the coating of the present invention Not only does it have the advantages of a general coating, but it does not easily cause other defects. Therefore, the coating of the embodiment of the present invention has excellent physical and chemical characteristics as compared with the comparative example. Further, in order to explain the present invention in more detail Excellent characteristics, durability test of plasma vacuum chamber under corrosive conditions. Table 2 • Coating variable example 4 D (mm) —— Ar (Psi) --- 30 He (psi) 115 powder Supply speed (RPM) 3 Carrier gas supply speed _ (psi) 20 Current (eight) 电压 Voltage (V) 39.5 ^Ion body grab > tracing speed (mm/sec) Experiment yuu Example 5 150 40 65 3 20 37.3 1000 40 85 3.5 50 40.8 The composition of the components used in this experiment was the same as that of AmorM2, and /, the powder was prepared to have a particle size of 1 〇 6 〇 μηι. Moreover, according to the comparative example and the experimental example of Table 2 10 Conditions were used to produce a coating. ^ Figure 29 shows the results of X-ray analysis of the coating of Experimental Example 3 of the present invention. From Fig. 29, a plurality of peaks can be observed, the coating as a whole is amorphous, but also partially crystalline. Figure 30 and Figure 31 Denote results by X-ray analysis of a coating made according to the present invention in Experimental Example 4 and Experimental Example 5 for 15. It can be observed from Fig. 30 and Fig. 31 that Experimental Example 4 and Experimental Example 5 differ from Experimental Example 3 in that almost 100% of an amorphous state is formed under the conditions. Prior to testing for corrosion resistance, the coatings of the respective experimental examples were first tested for hardness. The hardness of the coating was measured by a Vickers hardness tester with a load of 200 g. The test results are shown in Table 3. 30 200815624 Table 3 Conditions_Experimental Example 4 Experimental Example 5 Experimental Example 6 Hardness Value (Hv) 645 593 750 The results of Table 3 show that the hardness of Experimental Example 4 which produces partial crystal sorrow is similar to that of Experimental Example 5 and Experimental Example 6, When the layer is formed into an amorphous state as a whole, that is, it contains a partially crystalline state, and does not have a too large influence on the hardness. „ 5 In addition, when the coating consists of 100% amorphous state, that is, when the inside of the coating is not formed with pores, the hardness value increases. Therefore, as shown in Experimental Example 5 and • Experimental Example 6, 100% The hardness of the amorphous coating is also changed according to the coating conditions. Secondly, as described above, the corrosion resistance of each of the 10 coatings was measured under conditions prone to rot #. Si〇2 was carried out under the conditions of being etched at a rate of 300 nm/min. Specifically, the injection rate of CF4 gas was set to 40 sccm, the injection speed of 〇2 was set to 10 sccm, and the input power of the main electrode was set to 1000 W. The set power was set to 150 W, the pressure in the chamber was set to _ 15 5 mton·, and the temperature inside the chamber was maintained at 25 ° C. Moreover, the time to be exposed to the plasma environment was set to 1 hour. Comparative Example 2 Experimental Example 4 Experimental Example 5 Experimental Example 6 Average etching rate (nm/min) 77.2 20.22 15.83 10.5 3.58 Figures 32 and 33 show the results of observing the surface of the coating before and after the etching by an electron scanning microscope. 32 figure representation The surface of the coating before engraving, the surface of the coating after etching is shown in Fig. 3. The observation results are shown in Table 4. 20 Table 4 ____ 31 200815624 The etching rate of the experimental example of the present invention is shown from the average etch rate of Table 4. It is much slower than the comparative example. It can be seen that the coating of the embodiment of the present invention also has strong durability under strong oxidizing conditions. Experimental Example 4 is an experimental example of forming a partially crystalline state, which is associated with 100% non- The experimental example of the crystalline state shows a faster etching (corrosion) speed compared to the experimental example 5 of 6. It can be seen that the corrosion can be most effectively prevented only when the coating constitutes 100% amorphous. Moreover, comparing the results of Table 1 and Table 4, it can be concluded that in a weaker rot environment (the rotatory button speed is 1 〇〇nm/min based on Si 〇 2), the embodiment of the present invention When the coating was compared with Comparative Example 2, the corrosion rate was not different, but in a strong corrosive environment (corrosion rate of 300 nm/min based on Si〇2), the coating of the embodiment of the present invention The layer exhibited a much slower rate of corrosion than Comparative Example 2. It can be seen that the embodiment of the present invention The layer still has a very excellent resistance to corrosion in a highly corrosive environment. In addition, the invention may further comprise the step of forming a metallic intermediate layer, 15 which is intended to increase the bond strength of the thermal spray. The invention may further comprise a step of forming a plurality of coating layers by successively changing the composition of the substrate and the member to be coated (formation method of gradient coating). A metal intermediate layer is formed on the substrate to be different in physical and chemical properties of the coating from the substrate. In the case of a material, the problem that the coating layer is easily peeled off due to the fragility of the interface can also be solved. Between the coating layer and the coated member of the embodiment of the present invention, the intermediate layer can be formed by the following method, and the non-inventive of the present invention is applied. Crystalline material.丨) When Zr〇2 is coated on an aluminum substrate, an intermediate layer may be formed using a material such as NiCrAiγ having a small thermal expansion coefficient. 2) On the aluminum metal, the FeCr-based amorphous metal with high strength and excellent corrosion resistance can be used to form the intermediate layer. On the metal substrate, an intermediate layer may be formed using Cr, Ni, Fe, or an alloy including the metal. 4) On the substrate of Al2〇3, Si, Si〇2 or the like, the amorphous material of the present invention may be applied after the intermediate layer is formed using the same substance. 5 Thus, by the method of forming the metal intermediate layer of the present invention, peeling of the coating layer can be prevented, and corrosion resistance can be further improved. In addition, the coating and the component of the embodiment of the present invention may not have an intermittent second coating layer (intermediate layer), but a gradient coating layer, specifically, after preparing a powder of the same or similar substance as the substrate. The content of the amorphous coating material of the present invention is gradually increased by 10 during the coating process. This method can improve the durability of the coating. Moreover, preferred embodiments of the invention may be employed in conjunction with other coating forming techniques, or in the use of the amorphous coating of the present invention on a portion of the thermally sprayed coating. The present invention is not limited thereto, and various modifications and changes made within the scope of the invention, the scope of the invention, and the scope of the invention are all within the scope of the invention. L. Fig. Cui Cuiming; 3 20 Fig. 1 is a longitudinal sectional view of a plasma etching apparatus which is one of semiconductor manufacturing equipment. Figure 2 is a plasma grabbing profile of a plasma thermal spraying device. Not intended. Figure 3 is a plasma gun formed by an external form. 33 200815624 YA (People) Transfer (4) Photographs of poems. Painted _ (10) into the peach 曰 曰 的 surface of the electron scanning micrograph. The picture of the 5th is used to show the detachment of the sputum. Brother 6 is a liquid material 纟 time crystallization phenomenon ^t 条件 见 的 的 condition pattern diagram.

10 弟7圖係為用以顯示液態物質經冷卻而變為固態時所 產生的體積變化過程的模式圖。 弟8圖係為用以顯示液態物質變為結晶態固體時所產 生的缺陷之形成原理模式圖。 第9圖係為用以說明按材料的種類,冷卻時形成結晶態 固相的條件各異的模式圖。 第H)圖係為用以說明液態物質經冷卻而形成非晶態 15時,所發生的體積收縮過程的模式圖。The 10th figure is a pattern diagram showing the volume change process produced when the liquid substance is solidified by cooling. Figure 8 is a schematic diagram showing the principle of formation of defects generated when a liquid substance becomes a crystalline solid. Fig. 9 is a schematic view for explaining the conditions for forming a crystalline solid phase upon cooling depending on the type of material. The figure H) is a schematic diagram for explaining the volume contraction process which occurs when the liquid substance is cooled to form the amorphous state 15.

弟11圖係為用以說明液態物質成為非晶態時,阻止產 生龜裂等缺陷的過程模式圖。 弟12圖係為用以說明混合不同類型的粉末,以製備粉 末大小較大的熱噴塗用複合粉末過程的模式圖。 20 弟13圖係為根據本發明合成的熱噴塗用陶曼粉末的電 子掃描顯微鏡照片。 第14圖係為純Al2〇3的X線分析結果(x=1)。 第15圖係為(AIxYkhOXx = 〇·9)的X線分析結果 (χ=0·9)。 34 200815624 第16圖係為(ΑΙχΥ,-ΑίΜχ = 0.6)的X線分析結果 (χ=0·6) 〇 第17圖係為(AIxYhMMx = 0.1)的X線分析結果 (χ=0·1) 〇 5 第18圖係為高純度Υ203的X線分析結果(χ=0)。 第19圖係為在(AlxY^hG^xiA)粉末未完全熔融的狀 態下,進行熱噴塗而形成的塗層的X線分析結果(x=0.6)。 第20圖係為透過熱噴塗而形成的A1! .56YG.4403物質的非 晶態塗層的低倍率電子掃描顯微鏡照片(X200)。 10 第2 1圖係為透過熱喷塗而形成的All.56Y〇.44〇3物質的非 晶態塗層的低倍率電子掃描顯微鏡照片(X650)。 第22圖係為透過熱喷塗而形成的Ah.56Yo.4403物質的非 晶態塗層的高倍率電子掃描顯微鏡照片。 第23圖係為透過熱喷塗而形成的Ah.25Y0.75O3物質的非 15 晶態塗層的低倍率電子掃描顯微鏡照片。 第24圖係為透過使用靜電混合方法而形成的 AI1.25Y0.75O3物質的非晶態塗層之低倍率電子掃描顯微鏡照 片。 第25圖係為用以顯示Al2〇3、Y203的熱喷塗塗層與本發 20 明實施例塗層的硬度比較結果之曲線圖。 第26圖係為用以顯不ΑΙ2Ο3、Υ2Ο3的熱喷塗塗層與本發 明實施例塗層的抗劃性能比較結果之曲線圖。 第27圖係為用以顯示Υ203熱喷塗塗層與本發明實施例 塗層對鹽酸的抗腐姓性比較結果之曲線圖。 35 200815624 第28圖係為用以顯示AI2O3、Y2O3熱喷塗塗層與本發明 實施例塗層對腐蝕環境(等離子體)的耐久性比較結果之曲 線圖。 第2 9圖係為用.以顯示按照本發明的實驗例4的條件所 乂 5 製造的塗層的X線分析結果之曲線圖。 ; 第3 0圖係為用以顯示按照本發明的實驗例5的條件所 - 製造的塗層的X線分析結果之曲線圖。 第31圖係為用以顯示按照本發明的實驗例6的條件所 • 製造的塗層的X線分析結果之曲線圖。 10 第32圖係為用以顯示本發明實施例的塗層之電子掃描 顯微鏡照片。 第33圖係為用以顯示在以300nm/分的速度蝕刻Si02的 條件下,對本發明實施例的塗層,進行一個小時蝕刻結果 之電子掃描顯微鏡照片。 15 【主要元件符號說明】 2···上部電極 22…負極 8···基板支架 23…冷卻通道 9···下部電極 24···正極 13…氣體分散盤 25…等粒子體火焰 14…孔 26…支架 15…基板 27…粉末注入口 20…等離子體槍 29…塗層 21…氣體注入口 30…被塗部件 36The figure 11 is a process pattern for explaining the occurrence of defects such as cracks when the liquid substance is in an amorphous state. Figure 12 is a schematic diagram for explaining the process of mixing different types of powders to prepare a composite powder for thermal spraying having a larger powder size. 20 is a photomicrograph of an electron scanning micrograph of a ceramic powder for thermal spraying synthesized in accordance with the present invention. Figure 14 is the X-ray analysis result of pure Al2〇3 (x=1). Figure 15 shows the results of X-ray analysis (χ=0·9) of (AIxYkhOXx = 〇·9). 34 200815624 Figure 16 is the X-ray analysis result of (ΑΙχΥ, -ΑίΜχ = 0.6) (χ=0·6) 〇 Figure 17 is the X-ray analysis result of (AIxYhMMx = 0.1) (χ=0·1) 〇5 Figure 18 is the X-ray analysis result of high purity Υ203 (χ=0). Fig. 19 is a X-ray analysis result (x = 0.6) of a coating layer formed by thermal spraying in a state where (AlxY^hG^xiA) powder is not completely melted. Figure 20 is a low-magnification electron scanning micrograph (X200) of an amorphous coating of A1!.56YG.4403 material formed by thermal spraying. 10 Figure 2 is a low-magnification electron-scan micrograph (X650) of an amorphous coating of All.56Y〇.44〇3 material formed by thermal spraying. Figure 22 is a high-magnification electron scanning micrograph of an amorphous coating of Ah.56Yo.4403 material formed by thermal spraying. Figure 23 is a low-magnification electron scanning micrograph of a non-15 crystalline coating of Ah.25Y0.75O3 material formed by thermal spraying. Fig. 24 is a low-magnification electron scanning microscope photograph of an amorphous coating of an AI1.25Y0.75O3 substance formed by using an electrostatic mixing method. Fig. 25 is a graph showing the results of comparing the hardness of the thermal spray coating of Al2〇3, Y203 with the coating of the embodiment of the present invention. Fig. 26 is a graph showing the results of comparison of the scratch resistance of the thermal spray coatings of the examples of the present invention for exhibiting the coatings of the examples of the present invention. Figure 27 is a graph showing the results of comparison of the corrosion resistance of the Υ203 thermal spray coating with the coating of the embodiment of the present invention on hydrochloric acid. 35 200815624 Figure 28 is a graph showing the results of comparing the durability of the AI2O3, Y2O3 thermal spray coating with the corrosion environment (plasma) of the coating of the embodiment of the present invention. Fig. 29 is a graph showing the results of X-ray analysis of the coating layer produced in accordance with the conditions of Experimental Example 4 of the present invention. Fig. 30 is a graph showing the results of X-ray analysis of the coating produced by the conditions of Experimental Example 5 according to the present invention. Fig. 31 is a graph showing the results of X-ray analysis of the coating layer produced by the conditions of Experimental Example 6 according to the present invention. 10 Fig. 32 is an electron scanning micrograph showing a coating of an embodiment of the present invention. Fig. 33 is an electron scanning micrograph showing the results of etching for one hour of the coating of the embodiment of the present invention under the condition that SiO 2 was etched at a rate of 300 nm / min. 15 [Description of main component symbols] 2···Upper electrode 22...Negative electrode 8···Substrate holder 23...Cooling channel 9···Lower electrode 24···Positive electrode 13...Gas dispersion disk 25...Particle body flame 14... Hole 26...bracket 15...substrate 27...powder injection port 20...plasma gun 29...coating 21...gas injection port 30...coated member 36

Claims (1)

200815624 十、申請專利範圍: 1· 一種用於半導體製造設備的熱噴塗材料,其 /、了,所述教 贺塗材料為具有(Α1χΥι_χ)2〇3組成的非晶態結構,1中、、 為 0.05-0.95。 ’、 Χ 2·如申請專利範圍第〗項所述之熱噴塗材料,其 Τ,所述X 的範圍是0.5-0.95。 3·如申明專利範圍第1項所述之熱噴塗材料, + Τ,所述 熱贺塗材料包括粒徑為1-100 4瓜的粉末。 4· 一種用於半導體製造設備的熱噴塗材料的製傷方法,其 中’所述方法包括以下步驟: 、 混合粒徑為〇·1-30 μπ^ΜΟ3粒子和Ah教子,製 備具有(八1乂_士〇3組成的物質,其中 | χ槐圍是 0.05-0.95 ; 喷務乾燥所述物質,製備合成粉末; 在800-1500。(:溫度下煆燒所述粉末。 5·如申請專利範圍第4項所述之熱喷塗材料的製備方法, 其中, ' 混合製備所述物質的步驟進一步包括靜電施加步 驟,所述步驟誘導並使所述八丨2〇3粒子及AO3粒子攜帶 不同極性的電荷。 6·如申請專利範圍第5項所述之熱喷塗材料的製備方法, 其中所述靜電施加步驟包括: 在所述溶劑中添加聚甲基丙烯酸甲銨鹽 (Poly-methyl metacrylic ammonium salt),使所述Α12〇3 37 200815624 粒子帶負電荷;以及 在所述溶劑中添加聚趟酿亞胺(pQiy_e_n imide),使所述Y2〇3粒子帶正電荷。 7. -種服半導體製造設備㈣魅材料的塗布方法,其 包括以下步驟·· 準備具有(八1义士〇3組成的物質,其中X為 0.05-0.95 ; 向等離子體火焰注入所述熱噴塗材料,並進行加 埶; 將透過所述加熱過程處於完全熔融或半熔融狀態 的所述熱喷塗材料層積在所述用於半導體製造設備的 部件的表面上,以形成非晶態結構的塗層。 8·如申請專利範圍第7項所述之熱噴塗材料的塗布方法, 其中: 所述形成塗層的步驟進一步包括形成金屬中間層 的步驟。 9·如申請專利範圍第7項所述之熱喷塗材料的塗布方法, 其中: 所述形成塗層的步驟進一步包括,逐漸改變所述熱 噴塗材料的組成成分,以形成梯度塗層的步驟。 10·如申請專利範圍第9項所述之熱噴塗材料的塗布方法, 其中: 在塗布過程中,將所述熱喷塗材料的組成成分從與 被塗基材相同或類似的組成,逐漸改變為(Α1χΥι·χ)2〇3, 38 200815624 其中X的範圍是0.05-0.95。 11.如申請專利範圍第7項所述之熱喷塗材料的塗布方法, 其中: 所述形成塗層的步驟中,所述部件是真空等離子體 設備的腔室或所述腔室内部的部件。200815624 X. Patent application scope: 1. A thermal spray material for semiconductor manufacturing equipment, wherein the teaching material is an amorphous structure having a composition of (Α1χΥι_χ) 2〇3, 1 medium, It is 0.05-0.95. </ br> Χ 2 · The thermal spray material as described in the scope of the patent application, wherein X ranges from 0.5 to 0.95. 3. The thermal spray material of claim 1, wherein the thermal coating material comprises a powder having a particle size of 1-100 4 melon. 4. A method of injuring a thermal spray material for use in a semiconductor manufacturing apparatus, wherein the method comprises the steps of: mixing a particle size of 〇·1-30 μπ^ΜΟ3 particles and an Ah godson, and preparing the product (eight 乂1乂) _ 〇 〇 3 composed of substances, wherein | χ槐 is 0.05-0.95; spray drying the substance to prepare a synthetic powder; at 800-1500. (: temperature simmering the powder. 5 · as claimed The method for producing a thermal spray material according to Item 4, wherein the step of -mixing the substance further comprises an electrostatic application step of inducing and carrying the erbium 2 〇 3 particles and the AO 3 particles with different polarities 6. The method of preparing a thermal spray material according to claim 5, wherein the electrostatic application step comprises: adding a poly-methyl metacrylic ammonium salt to the solvent. a salt that causes the Α12〇3 37 200815624 particle to be negatively charged; and a poly-birth imine (pQiy_e_n imide) added to the solvent to cause the Y2〇3 particle to be positively charged. guide Manufacturing apparatus (4) a coating method of the glare material, comprising the following steps: preparing a substance having a composition of (1:1 士士〇3, wherein X is 0.05-0.95; injecting the thermal spray material into a plasma flame and performing twisting; The thermal spray material in a fully molten or semi-molten state through the heating process is laminated on the surface of the component for the semiconductor manufacturing apparatus to form a coating of an amorphous structure. The method for coating a thermal spray material according to Item 7, wherein: the step of forming a coating further comprises the step of forming a metal intermediate layer. 9. The thermal spray material according to claim 7 a coating method, wherein: the step of forming a coating further comprises the step of gradually changing the composition of the thermal spray material to form a gradient coating. 10. The thermal spray material according to claim 9 a coating method, wherein: during the coating process, the composition of the thermal spray material is gradually changed from the same or similar composition to the substrate to be coated ( 1 χΥ χ χ 〇 , , , , 2008 2008 2008 2008 2008 2008 2008 2008 2008 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热The component is a chamber of a vacuum plasma device or a component inside the chamber. 3939
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