TW200814099A - A chip resistor component and a manufacturing process thereof - Google Patents

Abstract

This invention is a chip resistor component and a manufacturing process thereof. The resistor component has a insulating substrate, two upper-electrodes forms on the up-side of the substrate, two bottom-electrodes forms on the back-side of the substrate, a resistance layer forms between the bottom-electrodes, a cover coat forms on top of resistive element, two side-electrodes formed on the sides of the substrate and electrically connects with the upper-electrodes and bottom-electrodes, and plating films forms above the surface of the upper-electrodes, bottom-electrodes, and side-electrodes, which has a Cu plating layer, Ni plating layer, and Sn plating layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a passive component and a method of fabricating the same, and more particularly to a chip resistor component having a micro-ohm (micro_Q) rating and a method of fabricating the same. [Prior Art] Referring to Fig. 1, a chip resistor element is a passive component soldered to a laminated circuit board (PCB) for providing a resistance value of a micro-ohmic scale. The chip resistive element 1 comprises a substrate u, two positive terminal electrodes 12, two back end electrodes 13, a resistive layer 14, a protective layer 15, two side electrodes 16, and a second plating layer 17. The substrate 11 is made of an insulating material and has a rectangular plate shape and has a moon surface 111, a side surface 112 extending upward from the side of the back surface lu, and a front surface connecting the top sides of the two side surfaces 112. . 'And the electrodes 12 are electrically conductive and spaced apart on the front side

113, and each of the positive electrode 12 is relatively far from the other side of the positive electrode and the side surface 112 of the substrate 11 is overlapped with 疋1V and is formed on the back surface m at intervals, and the back The side electrode 13 is relatively far from the other side of the back end electrode ^ and the side surface 112 of the secret material u is M, and the pole 12 and the back end electrode 13 are symmetrical to each other. The electric resistance layer 14 has a predetermined resistance value, and is disposed on a region of the back surface (1) between the two back end electrodes 13^v, and the opposite side edges thereof are regions respectively and the second back end Lei The 3 side regions overlap to form an electrical connection with the second back 200814099 terminal electrode 13. The protective layer 15 is insulated to insulate the resistive layer U from the outside to form a corresponding contact with the resistor. The two side electrodes 16 are electrically connected to the side surface 112 and are respectively in contact with each other. Electrical connection.] The side of the positive and the back end electrode 丨 2, 13 phase 5 hai - money ^ layer 17 respectively ϋ Α 正 upper positive end I * # 12 / 丨 to form the material formed on the same side of the electrode 12, side The electrode 16 and the back electrode 13 are biased. The wafer f resistance element 1 can be soldered to the laminated circuit board by the two back electrode 13 and the two side electrodes 16 and the second plating layer. 2(10), advance (4) self-stacking electricity pure _ _ 塾 塾 = 〇 through the resistive element side of the plating layer 17, the back end electrode η, the resistance layer 14, to the other side of the back electrode 13, to another weld The current path formed by the pad 2 provides a resistance value of the micro-ohmic scale in the f-path. However, since the chip resistive element 1 is soldered to the laminated circuit board 7, the protection 3515 directly contacts the laminated circuit board. 】 (9) and / or 疋 zinc pad 200 caused by two plating layers 17 relative to the welding pad to be moved into an overhead state 'not only It is easy to match the position of the welding 塾 & & & & & & & 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊 焊Another chip resistive element 2 which is easy to be soldered and fixed on the laminated circuit board 100 comprises a substrate 21, two positive terminal electrodes 22, two back end electrodes 23, a resistive layer 24, a protective layer 25, and two Side electricity 200814099 pole 26, two auxiliary filler 27, and two plating layers 28. b. The substrate 21 is made of an insulating material, has a rectangular plate shape and has a back surface 211, two side surfaces 212 extending upward from opposite sides of the back surface 211, and a front surface ZB connecting the top sides of the two side surfaces 212. . The two positive terminal electrodes 22 are electrically conductive and spaced apart from each other on the front surface 213, and each of the positive terminal electrodes 22 is opposite to a side surface 212 of the substrate 21 with respect to a side opposite to the other positive terminal electrode 22. The two back-end electrodes 23 are electrically conductive and spaced apart from each other on the back surface 211 and the side of each of the back-end electrodes 23 relatively away from the other back-end electrode u also coincides with the side surface 212 of the substrate 21 The second positive electrode 22 and the back electrode 23 are symmetrical to each other. The resistive layer 24 has a predetermined resistance value, and is disposed on a region of the back surface 2 ι between the two back end electrodes 1523, and opposite side portions of the two sides are respectively opposite to the side regions of the two back end electrodes 23 The electrodes are electrically connected to the two back electrodes 23 by lamination. The protective layer 25 is made of an insulating material, and the resistive layer 24 is shielded from the outside by correspondingly covering the resistive layer μ. The two side electrodes 26 are made of an electrically conductive material and are formed on the two side faces 212, respectively, and are electrically connected to the positive and back end electrodes 22, 23 of the same side. The two auxiliary fillers 27 are respectively formed downward from the surface of the two back end electrodes 23 with a conductive material and have a substantially trapezoidal cross section. The second mineral layer 28 is formed of tin as a main constituent material, and the surface of the positive electrode 22, the side electrode 26 and the auxiliary filler 27 are formed upward from the same side. 200814099 The above-mentioned chip resistor element 2 can be erroneously shaped by the shape of the second auxiliary filler 27, so that the solder layer 28 corresponds to the cross-sectional shape of the second back end electrode 23 obliquely extending toward the protective layer 25. Positioned on the multilayer circuit board of the Xueyu 200, and then the mineral layer 28 made of the material of the tin rabbit main body is well combined with the solder 300, and the phase is reinforced with the solder pad 200 of the laminated circuit board 100. on.

However, in order to form the auxiliary filler 27 having a trapezoidal cross section of the chip resistive element 2, at least one process step is added, and the second step is also to "perfectly form" the special shape in the actual mass production process. The state-like auxiliary filler 27, therefore, the wafer resistor element 2 having the auxiliary filler 27 is structurally sturdy and can be positioned to be soldered to the known mat 200, but is not actually available on the production line. Mass production implementation. In addition, since the resistance of the chip resistive element 2 in the circuit is to provide a resistance value of a micro-ohmic scale, that is, a rear end electrode 23, a resistive layer 24, and the like from one side of the element 2 The current path formed by the back electrode 23' on one side reaches the other-welding fan is relatively strict (4) to the actual resistance value in the circuit; and the US Patent No. 685623^2 "CHIP" continues to be assisted Since the wafer resistor element 3 of the filler 27 is added with the auxiliary filler 27, the resistance layer 24 is relatively thinner than the pad of the laminated circuit board, so that the current path length is increased and the chip resistance element is also made. 2 After the path length of fresh=200 heat conduction increases, the phase shape is difficult. Therefore, the power applied to the component 2 itself is not only small, but also provides the temperature and the value (4) temperature instability.杈Two 200814099 Therefore, the current wafer resistance is improved by 70 pieces, 1.2, so that the basin is not only positioned, but also welded to the same '%, ', can also be applied to high-power applications and provide Stable micro-ohm scale resistance value. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a wafer resistor element that is high-powered and easily positioned and soldered on a laminated circuit board.

Further, another object of the present invention is to provide a method of manufacturing a chip resistor element which is high in power and which is easy to be soldered to a laminated circuit board. Thus, a chip resistor element of the present invention comprises a US end electrode, a second back electrode, an electrical layer, a """"""" The substrate is insulated and formed into a plate shape, and has a back surface, two sides extending upward from opposite sides of the back surface, and a front surface connecting the top sides of the two sides. The two positive electrodes are electrically conductive and phased. The front surface is formed on the front surface at intervals, and each of the positive terminal electrodes is opposite to a side of the substrate opposite to the side of the other positive electrode. The two back end electrodes are electrically conductive and spaced apart on the back surface, and each of the back end electrodes is opposite to a side of the substrate opposite to the side of the other back end electrode. The resistive layer has a predetermined resistance value and is formed on a region of the back surface between the two back electrode portions, and opposite side edge regions are respectively connected to the back electrode portion side region. The protective film covers the surface of the resistive layer to isolate the resistive layer from the external phase 200814099. The two side electrodes are electrically conductive and are formed on the two sides and electrically connected to the positive and back end electrodes of the same side, respectively. The two coatings are respectively formed upward from the front side electrode and the side electrode end electrode surface of the same side, and each of the first ❹ and - the main electrode, the side electrode and the back end electrode surface are connected with nickel as a main component And a second shovel sound connected to the surface of the first ore layer: and a third plating layer mainly composed of tin and connected to the surface of the second plating layer: Furthermore, the invention provides a method for manufacturing a chip resistive element

Next step. s M firstly forms a plurality of longitudinally spaced longitudinal rupture grooves and laterally spaced transverse rupture grooves on the upper surface of the insulating substrate, and the two adjacent longitudinal rupture grooves and the transverse rupture grooves together define a component cell region.乂 _ further corresponding to each of the longitudinal rupture grooves on the lower surface of the substrate to electrically (four) form a back electrode strip on opposite sides of the longitudinal rupture groove. And then, corresponding to each of the longitudinal rupture grooves, a positive electrode strip on the opposite sides of the longitudinal rupture groove is formed on the upper surface of the substrate by a conductive material. And connecting a resistive layer strip respectively connected to the two back end electrodes on a side of each of the two adjacent back end electrodes of the lower surface of the substrate by a predetermined metal material. Further, an insulating sound bar is formed on the plurality of resistive layer strips by an insulating material.曰 户 继续 继续 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户 户. Then, on the surface of the insulating strip of the semi-finished product, a strip of the strip having the predetermined shape and shape of the resistive strip is isolated from the outside. Then continue to produce a semi-finished product of a plurality of strip-shaped semi-finished products along the majority of the longitudinal rupture grooves. Then, a side electrode strip electrically connected to the positive and negative electrode strips is formed by a conductive material on the two fracture faces of the strip-shaped semi-finished product. Then, along each of the strip-shaped semi-finished products obtained by rupturing the majority of the transverse rupture grooves, a plurality of wafer resistor element semi-finished monomers having two positive-end electrodes, two-f-terminal electrodes, two-side electrodes, a resistive layer and a protective film are respectively obtained. .

Finally, the surface of the two positive, back and side electrodes of the semi-finished monomer of the per-wafer resistive element is mainly composed of copper as the main material component, nickel as the main material component, and the main material component of tin is formed to include the first-plated layer, the first The coating of the second ore layer and the third plating layer produces a plurality of chip resistive elements. λ The effect of the invention lies in that the plating layer is formed by using steel, recording and tin as main materials in a simple process, and the components are easily positioned on the material by using liquid zinc tin, and the solder is bonded to the solder. Integral; and can reduce the electron flow path of the component to the pad and the length of the thermal conduction path to make the component more powerful and provide a more accurate micro-ohmic resistance value in the circuit. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 3 and FIG. 4, a preferred embodiment of a chip resistor element 3 of the present invention is easy to solder and fix on the soldering pad 2 on the laminated circuit board 1 and is easy to dissipate heat and is suitable for high power. The application comprises a substrate 31, two positive terminals 32, two back electrodes 33, a resistive layer 34, a protective film 35, two side electrodes 36, and a second film 37. The substrate 31 is made of an insulating material and has a rectangular plate shape and has a moon surface 311, two side surfaces 312' extending upward from opposite sides of the back surface 311, and a front surface connecting the top sides of the two side surfaces 312. The two positive terminals 32 are electrically conductive, and are respectively formed on the front surface 313 at intervals in a rectangular shape, and each side of the positive electrode is relatively away from the side of the other positive electrode and a side of the substrate. 312 coincides. The two back electrodes 33 are electrically conductive, and are respectively formed on the back surface 311 at intervals in a rectangular shape, and each of the back electrodes is opposite to the side of the other back electrode 33 and the substrate. One side surface 312 of 31 coincides such that the two positive terminal electrodes 32 and the back end electrodes 33 are symmetrical to each other. The resistive layer 34 is composed of an alloy of, for example, a button, chrome, nickel, aluminum, manganese, copper, silver, and metal bismuth, and has a predetermined geometrical state and has an accurate micro-ohmic scale resistance i Formed on a region of the back Φ 311 between the two back end electrodes 33, and opposite side portions of the two sides are respectively overlapped with the side regions of the two back end electrodes 33 and the north end electrodes 33 forms an electrical connection. The protective film 35 is made of an insulating material, has a shape similar to the layer 12 of the resistor 12 200814099 and is connected to the surface layer 35 of the surface of the resistor layer 34, and is bonded to the insulating layer 351 and coated. The resistive layer % is a cladding layer 352 that is isolated from the outside. The two side electrode % are respectively formed by electrically conductive materials such as silver paste, metal box, etc., respectively, formed on the two side faces 312 and respectively contacting the positive and back end electrodes 32, 33 of the same side. Electrical connection.

The second ore film 37 is formed upward from the surface of the positive electrode 32, the side electrode 36 and the back electrode 33 on the same side, and each film π has a copper-based component and the positive electrode 32, a first plating layer 371 having a side electrode % connected to the surface of the back end electrode 33, a second key layer 372 which is recorded as a main component and connected to the surface of the clock layer 371, and a tin-based composition a second (four) 372 surface-connected third money layer 373, and the thickness of the first ❹:2 is greater than the thickness of the second and third plating layers 372, 373, and §Hai, ^, and III plating 371, 372, 373 The thickness is greater than the distance from the back surface 311 of the substrate 31 to the surface of the protective film 35. The wafer resistive element 3 of the present invention is directly soldered to the third plating layer 373 which is tin-based as the outermost layer of the second plating film 37 during soldering to the I dry pad 200 of the laminated circuit board 1 The pad is in fine contact and is in contact with the molten solder in the molten state, and is automatically positioned correctly by the liquid-forming solder and the cohesive force to be solidified, and when the (4) 3 (8) is solidified, the normal stone t and the good shape can be welded. At the same time, the thickness of the second ore film 37 is relatively thin, and the main components of the first and second ore layers are still steel and nickel with excellent thermal conductivity, that is, (4) in the pad. After 2 几, a few 3 resistor layers 34 are not only closer to the two pads, but also pass through a 13 200814099 fresh 塾 2 〇 0 through the element 3 - side of the mineral film 37 , the back end electrode 33 , the resistance layer 34 to the other side The back electrode%, the clock film π, and the other soldering 塾 开 / 成 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ High power applications. "The above-mentioned embossed sheet resistor element 3 can be more clearly understood after passing through the process description as shown in Fig. 5. > READ® 5' f prepared above the wafer resistor element 3 of the present invention is a step ΓΓ', as shown in Fig. 6, the stomach 7 is formed on a surface of an insulating substrate to form a plurality of criss-crossing craters 602, which are defined by the adjacent two lateral and longitudinal «grooves 6G2. The monomer region 6 () 3; the insulating substrate A (four) 1 may be, for example, a glass substrate, a ceramic substrate, or a substrate composed of an epoxy resin, preferably, the depth of the broken (four) 6G2 is set to be micrometer. In the subsequent process, the predetermined semi-finished product can be physically ruptured in the subsequent process. More than FIG. 5 is followed by step 502, and corresponding to FIG. 8 and FIG. 9 矣 corresponds to each longitudinal rupture groove 602 in a printing manner. The substrate 6〇1 is printed with a conductive material to form two electrode strips corresponding to the phase 2 of the longitudinal rupture groove 6〇2. Further, for example, a metal H bonding method, a real money splashing method, and a surface fascination ', ^ plating method is a type that can form the back electrode strip 604. Since there are many ways of forming such a shape, and it is not the focus of the present invention, it will not be described in detail here. Referring to Figure 5, step 503 is followed, and the rupture groove 602 corresponding to each longitudinal direction is also printed in the same manner as the reference. The upper surface of the base 14 200814099 board 601 is printed with a conductive material to form two positive electrode strips 6〇5 on opposite sides of the longitudinal v-breaking groove 6〇2. Similarly, for example, a metal foil bonding method, a vacuum money mine The manners and the like are all ways of forming the positive electrode strips 6〇5, and since these forms are numerous, and are not the focus of the present invention, they will not be described in detail here. Referring to FIG. 5, step 504 is followed and cooperated. Referring to FIG. 12 and FIG. 13 , the two surfaces of the substrate 6 〇 ι are correspondingly printed in the same manner.

The resistive strips 6〇6 are formed by printing between the moons and the private strips 604, and the two sides are overlapped with the two back electrodes 604. Similarly, the manner in which the metal ruthenium bonding method, the vacuum splattering method, and the like are all possible to form the resistive layer strip _ is complicated by the manner in which these forms are formed, and will not be described in detail herein. Referring to Figure 5, the steps 5〇5 are followed, and an insulating layer strip 607 is printed on each of the strips of the resistive layer in a manner similar to that of Fig. 14 and Fig. 14 . 5) Next, the steps should be followed, and with reference to _ Μ, Η, and then, for example, a high-energy beam of laser corresponding to each of the element cell regions 603, the majority of the insulating layer strips 6〇7 and the resistive layer strips are accurately cut_ The precise geometry of the set, _ sure ^ has a pre-corresponding resistance value. The 19th member of the 乂 mother & early body area 603 performs step 5〇7' and cooperates with the reference _ 18, and the splicer of the semi-finished product obtained through the above steps is printed on the surface of the reed strip 6〇7 to form a package. Covering the insulating layer of the bar = the barrier layer 6〇6 and the resistance after the (4) (4)_enclosed cladding 15 200814099 layer strip 608. Referring to Fig. 5, step 508 is followed, and the majority of the longitudinal rupture grooves 6〇2 of the semi-finished product obtained by the 507 is directly physically ruptured with reference to Fig. 2, Fig. I1: a plurality of long semi-finished products. Referring to the figure, the process proceeds to step 5G9, and the second rupture® 609 of the finished product is formed with a conductive material to form a two-positive, back-end electrode strip 605 on the strip. 604 electrically connected side electrode strips _; in this example, the silver paste is applied directly to the bismuth surface of each _ semi-finished product, and is dried to form the two side electrode strips _ 〇 see FIG. 5, followed by Step 51 〇, and with reference to W 24, Figure 1 after the (4) of the surface electrode strip (10), that is, along the transverse step of each of the strip-shaped semi-finished products obtained through the above steps (four) 602 direct physical rupture 忒 each half-time' That is, the majority of the plurality of positive-electrode electrodes μ, the two-north-end electrode 33, the two-side retort y ^ ^ ^ , the electrode 36 , the resistive layer 34 , and the protective film 35 including the insulating layer 1 and the cladding layer 352 are respectively formed. The chip resistive element semi-finished monomer 〇n is shown in FIG. 5, and then step 511 is performed, and referring to FIG. 26 and FIG. 27 'finally, the two positive, back and side electrodes 32 33, 36 of the semi-finished monomer of the per-wafer resistive element. The surface is sequentially composed of copper as the main material component, recorded as the main material (four), and the main material composition of tin is plated. Is formed with two - of money layer 371, 372, and coating the second layer of the third recording layer 373 of the bell 37, i.e., complete: making the sheet resistance of the element 3. According to the above-mentioned brothers, the present invention mainly uses a simple plating process, 16 200814099 ”, copper recording, tin as a main material to form a mineral film 37 containing three plating layers 371, 372, 3曰73, and the wafer is made. The resistive element 3 can be directly adjusted on the pad 2 (10) after being directly fine-tuned by the inner force of the liquid helium, and is well bonded to the solder 3 when the solder 300 is solidified; at the same time, by the mineral film The relatively thin 37 can relatively reduce the electron flow path of the component 3 to the pad 200 and the long heat conduction path, so that the #3 has a higher power scoop application and provides a more accurate micro-ohmic scale resistance value in the circuit. The improved wafer resistive element 2 with auxiliary filling 27 proposed in U.S. Patent No. 6,856,234 B2 has a complicated process and is almost impossible to actually implement in mass production, and also improves its component 2 because of the boosting force: auxiliary filling 27, so the relative current path is increased, and the component 2 is difficult to apply to high-power applications, and the resistance provided is less stable due to the influence of temperature. Point, indeed achieve the creative purpose of the present invention. The above description of the present invention is only a preferred embodiment of the present invention, and does not: limit the scope of the practice of the present invention, that is, the simple equivalent of the application of the present invention: Li Ganwei and the description of the invention Variations and modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [1] is a cross-sectional view illustrating a conventional chip resistor component and illustrating its soldering on a pad of a laminated circuit board; Figure 2 is a cross-sectional view showing another conventional chip resistor FIG. 3 is a perspective view showing a preferred embodiment of a wafer resistor element of the present invention; FIG. 4 is a cross-sectional view. It is clear that it is freshly adhered to a laminated electric circuit. 5 is a flow chart; the description of the chip resistive component of FIG. 3 is applied to the pad of the circuit board; 'illustrating the fabrication of the chip of the chip of FIG. 3 is shown in FIG. 501; Is a perspective view that assists in explaining a step in the manufacturing process of Figure 5.

Figure 7 is a side view of the step 501; Figure 8 is a perspective view 502; with the accompanying Figure 6 to assist the description of the manufacturing process of Figure 5 to assist in the description of the manufacturing process of Figure 5 - steps Figure 9 is a side view, with the Figure 8 auxiliary explanatory diagram Step 502 of the manufacturing process of FIG. 5; FIG. 10 is a perspective view, which assists in explaining the manufacturing process of FIG. 5 - step 503;

Figure 11 is a side view, with reference to Figure 10, which assists in explaining step 503 of the manufacturing flow of Figure 5; Figure 12 is a perspective view of a step 504 of the manufacturing process of Figure s; Figure 13 is a side view, with the assistance of Figure 12 FIG. 14 is a perspective view, which is a perspective view of a manufacturing process of FIG. 5; FIG. 15 is a side view, and FIG. 14 is a supplementary view of the manufacturing flow 18 of FIG. Step 505; 'FIG. 16 is a perspective view, which assists in explaining a step 506 of the manufacturing flow of FIG. 5; FIG. 17 is a side view, with reference to FIG. 16 to assist step 506 of the manufacturing flow of FIG. 5; FIG. 18 is a perspective view. A step 507 of the manufacturing process of FIG. 5 is assisted; FIG. 19 is a side view, with reference to FIG. 18, which assists in explaining step 507 of the manufacturing flow of FIG. 5; 508; FIG. 20 is a perspective view, which assists in explaining one of the manufacturing processes of FIG. step

Figure 21 is a side view, with reference to Figure 2, which assists in explaining step 508 of the manufacturing flow of Figure 5; ;, L 509; Figure 22 is a perspective view, which is a step-by-step illustration of the manufacturing flow of Figure 5, Figure 23 is a side view, Step 509; Fig. 24 is a perspective view, 510; Fig. 25 is a side view, step 510 of the spear; and Fig. 22 is used to assist the manufacturing flow of Fig. 5 to explain the manufacturing process of Fig. 5 EMBODIMENT DESCRIPTION The manufacturing flow diagram 26 of Figure 5 is a perspective view that assists in the steps of the manufacturing process of Figure 5.

26 Auxiliary description of the manufacturing flow of Figure 5, 19 511; step 511 of 200814099.

20 200814099

[Main component symbol description] 100 laminated circuit board 34 resistance layer 200 fresh 塾 35 protective film 300 fresh tin 351 insulating layer 1 chip resistive element 352 cladding layer 11 substrate 36 side electrode 12 positive electrode 37 coating 13 back electrode 371 First ore layer 14 resistive layer 372 second plating layer 15 protective layer 373 third plating layer 16 side electrode 501 step 2 chip resistive element 502 step 21 substrate 503 step 22 positive terminal electrode 504 step 23 back end electrode 505 step 24 resistive layer 506 Step 25 Protective layer 507 Step 26 Side electrode. 508 Step 27 Auxiliary filler 509 Step 28 Mineral layer 510 Step 3 Chip resistive element 511 Step 31 Substrate 601 Substrate 32 Positive terminal electrode 602 Rupture groove 33 Back end electrode 603 Element cell area 21 200814099 604 Back end electrode strip 608 Cladding strip 605 Positive end electrode strip 609 Rupture surface 606 Resistance layer strip 610 Side electrode strip 607 Insulation strip 22

Claims (1)

200814099 X. Patent Application Scope·· 1 · A chip resistor component, comprising: a substrate, insulated and plate-shaped, having a back surface and two sides extending upward from opposite sides of the back surface, and - connecting a front side of the top side of the two sides; - a positive terminal electrode 'is electrically conductive and spaced apart on the front side And the side of each of the positive-side electrodes is opposite to the side of the substrate, and the side of the substrate is electrically conductive and spaced apart on the back surface, and each of the (4) the electrode is relatively distant from one side of the other-f-terminal electrode substrate; ^: the resistive layer is a resistance having a predetermined micro-ohmic scale and is formed on the region of the lunar surface between the two back-end electrode portions And the opposite side regions are not connected to the side regions of the two back electrode portions; ...-protective film corresponding to the surface of the resistive layer to be separated from the outside The two side electrodes are electrically conductive and are respectively formed on the two sides and respectively, and the positive and back end electrodes of the same side are electrically connected; and the back end: =, respectively, the positive end electrode and the side of the same side The electrode and the ::: surface are formed upward, and the per-mineral film has - mainly composed of copper: a human first positive electrode, a side plating electrode and a back electrode surface connected to the first plating layer, a nickel-based composition and n The first layer of the plating surface of the zizi plate is _ and the tin is the main component and the third _. The wafer resistor element according to claim 1, wherein the sum of the thicknesses of the first and second 'three plating layers is greater than the back surface of the substrate to the surface of the protective film. distance. The wafer resistor element according to claim 2, wherein the thickness of the first mirror layer is greater than the thickness of the second and third plating layers. 4. The wafer resistive element according to claim 3, wherein the resistive layer has a predetermined geometry, and the protective film comprises an insulating layer having a shape similar to the resistive layer and connected to a surface of the resistive layer, And a cladding layer attached to the surface of the insulating layer. 5. The chip resistive element according to claim 4, wherein the resistive layer is formed of a material selected from the group consisting of: a button, chromium, nickel, aluminum, manganese, steel, silver, palladium, Platinum, and combinations of these. 6. A method of manufacturing a chip resistive element, comprising: (a) forming a plurality of staggered longitudinally and horizontally spaced rupture grooves on an upper surface of the insulating substrate, the two adjacent lateral and longitudinal rupture grooves collectively defining a component cell region (b) corresponding to each of the longitudinal rupture grooves, a conductive material is formed on the lower surface of the substrate to correspond to the back electrode strips on opposite sides of the longitudinal rupture groove; (c) corresponding to each longitudinal rupture groove on the upper surface of the substrate The conductive material forms two positive electrode strips on opposite sides of the longitudinal rupture groove; () forming a two-sided portion with a predetermined metal material on a region between each two adjacent back-end electrodes of the lower surface of the substrate a resistor strip connected to the second back electrode strip; 24 200814099 On the plurality of resistive layer strips, the w insulating material is respectively laminated; forming an insulation (1) (g) to precisely cut and modulate the geometry of the plurality of insulating strips and the resistive strips with a high energy beam corresponding to each of the element regions; To precisely modulate the corresponding resistance value of the monomer region of each component. The surface of the insulating layer strip of the semi-finished product obtained in the step (1) forms a cladding layer strip which isolates the resistance layer strip having the predetermined geometry from the outside; (1) rupturing the semi-finished product obtained in the step (g) along the plurality of longitudinal rupture grooves to obtain a plurality of strip-shaped semi-finished products; (1) forming a side electrode strip electrically connected to the δ hai positive and back electrode strips on the two rupture surfaces of each strip of the semi-finished product; (1) transverse direction of each strip-shaped semi-finished product obtained along the step (1) The rupture groove ruptures the plurality of strip-shaped semi-finished products, and obtains a plurality of wafer resistor element semi-finished monomers each having two i-terminal electrodes, two back-end electrodes, two-side electrodes, a resistive layer, and a protective film; and (1) from each of the wafers The second positive, back and side surface of the semi-finished monomer of the resistive element is mainly composed of copper as the main material component, nickel as the main material component, and the main material component of tin is formed to include a first plating layer, a second plating layer, and a first A three-plated coating produces a majority of chip resistive elements. According to the patent application scope f 6 , a method for manufacturing a wafer-transferring element received by a member, wherein the positive-end electrode strip is formed by printing. The manufacturer of the chip resistor element according to claim 6 of the patent application scope is disclosed. 9. The method according to claim 6, wherein the manufacturing of the back electrode 侔 〜 AS 件 疋 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属, ^t,,,, b _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ According to the > described in item 6 of the patent scope. The method, wherein the back electrode 侔 is a manufacturing method of #(四)卩70 pieces, wherein the manufacturing layer strip of the resistor layer strip 9 is formed by printing. - According to the scope of application of the patent No. 6_, wherein: the resistance layer is made of ... 々 resistance 兀 乂 if if if if 14. According to the scope of the patent application of the sixth 'form. Method, bean, 4 士 a, 斤述日日片片电阻元件 manufacturing method, wherein the resistance layer is based on the real exhibition 15. According to the scope of the patent application. The method, wherein the second step (7) = the manufacturing of the resistive element - according to the scope of the patent application 帛 6 = ^ beam is a misalignment. The method, wherein the side electrode strip is a melon of the ^^ / barrier member _ application phase I around the sixth item = core forming. The method, wherein the side electrode 侔 is a manufacturing element of the ...... resistance element, the patent _6 item _; The method further includes the step (1) of forming a plurality of packets for identifying the type of the chip-resistive component on the manufacturing layer of the :--resistive resistor element.