TW200809901A - Arc quenching circuit to mitigate ion beam disruption - Google Patents

Abstract

The present invention is directed to a circuit for quenching an arc that may form between high voltage extraction or suppression electrodes associated with an ion source of an ion implantation system to mitigate an erratic ion beam current and avoid non-uniform ion implantations, for example. High voltage high speed switching circuits are added in series with the voltage supplies for the suppression and/or extraction electrodes to extinguish the harmful arcs which may nearly discharge the high voltage capacitors of such HV power supplies, which dramatically affects the ion beam current and takes considerable time thereafter to recover. The high voltage switches are controlled by trigger circuits which detect current or voltages changes in the HV switches that absorb excess energy from reactive components and clamp any overvoltages to protect the HV switches.

Description

200809901 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION [0002] The present invention relates generally to ion implantation systems, and more particularly to high voltage electrodes that are used to extinguish an ion implantation system and/or Arcing between ion sources to mitigate the erratic effects of ion beam currents in such systems subjected to such arcs, resulting in a more uniform separation; _ [Prior Art] Ion implantation systems are used to give The dopants of the dopant elements are generally referred to as within the semiconductor substrate or wafer of the workpiece. In these systems: the ion source frees the desired dopant element, and the free impurity is extracted from the ion source as an ion beam. The ion beam is directed (eg, stalked) across individual workpieces to implant free dopants into the workpiece. These: the heterogeneous ions change the composition of the workpiece so that the workpieces have the desired electrical special spring. This can be used to make special semiconductor devices such as transistors on the substrate toward a smaller electronic device. , a large number of:, more powerful and more energy efficient semiconductor process, and more special two also carefully control the uniformity of ions implanted into the wafer. Furthermore, semiconductor devices are now being manufactured Increasing the throughput of larger workpieces, such as using more than 300 millimeters (mm) and more devices on a single wafer. The two rounds make it possible to produce wafers that are expensive, and therefore It is hoped that the waste of the entire crystal 200809901 □ must be discarded due to the ion implantation of the non-homologous ° ° °, and: the larger wafer and high-density characteristics are challenging the uniform ion cloth to be straight. The beam must be scanned across a larger angle and distance to reach the perimeter of the wafer so that no implantation is allowed in any area. In addition, the high voltage required to supply the ion source of the ion beam will be encountered. Occasional arcing between the extraction electrode and the suppression electrode and other nearby components. The tendency of this arc is often completely discharged by one or more affected HV (high voltage) supplies until the arc naturally self-extinguishes to a very low supply. Repeatedly. When an arc occurs, the beam current will become severely irregular or interrupted until the supply voltage is restored. During this time, the ionization will be intermittently affected. Therefore, there is It is necessary to associate the ion source or electrode of the U sub-planter with # Ην and provide the H cloth L silver and the content at the large implantation angle of the ion beam and (4) to present a concise overview to provide the present invention. A basic understanding of the present invention. This summary does not extend the overview of the present invention and is not intended to be a key or important component of the present invention, nor is it intended to be::: =. The main purpose is to use a concise form of the text: Ming - some concepts 'to provide a more detailed description of the dilute: / The present invention relates to m 'used to extinguish, will form the high voltage associated with the separation of the system (Hv "ion Planting light, such as irregular ion beam currents and uneven arcs, to reduce the number of implants. Several high 8 200809901 = high-speed switching circuit settings revealed to be added in series to the high voltage associated with the suppression and / or extraction electrodes associated with the ion source a supply for extinguishing harmful arcs. The arcs that are opened in these areas have a HV power supply that is fully discharged, such as an ion source or extraction electrode supply voltage (Vext), or an electrode supply voltage (:suP). The tendency of the high voltage capacitors in the supply. So the beam current will be abruptly affected by these - faults in the beam current (1 beam), and therefore, it will take a considerable amount of time to recover the supply voltage and Beam Current. / According to one or more aspects of the present invention, an electrical 5-wire circuit for an ion source of an ion implantation system is disclosed that is adapted to be used to implant ions into - or a plurality of workpieces. In the present invention, the system includes one or more high voltage high speed (HS) switches in series with a power supply (HVPS) for ion sources (or one of several HV extraction or suppression electrodes). Connected, the high voltage high speed (HVHS) _ is operable to interrupt the Μ power supply current to the ion source or electrode to extinguish the arc and further operate to reestablish the power supply current. The number of ions that can be extracted from the ion source is in the form of an ion beam having a beam current. The system also includes a trigger control circuit that varies the current or voltage associated with the ion (four) HV electrode and controls one or more HVHS switches to open or close based on the detection of the current or voltage change. One or more protection circuits are also included

The HVHS is individually controlled and is operable to absorb the energy from the reactive components external to the individual HV switches and to clamp the excess voltage generated across the switch. In another aspect of the present invention, the system further includes a synchronization circuit, which can be used to synchronize the trigger control circuit of the arc extinguishing circuit on the two solids 1, k W Μ, and the special touch control system. A circuit for opening and closing more than two high voltage switches. In yet another aspect, the detection of a change in current or voltage associated with the ion source includes one of a decrease in the detection_hair source supply and a decrease in the extraction electrode voltage. In yet another aspect, the switches are connected in series.

One of these protection circuits is the HV to which it is protected

One of the circuits is the HV that it protects, and the other includes the extraction suppression power. In still another aspect, the protection switches are connected in parallel. In still another aspect of the invention, the pole is disposed adjacent to the ion source. Adjusted during another planting process. In the view, the detection of current or voltage is completed by the ion cloth to promote the feedback of the current or voltage of the difficult source or the closed circuit. =: 2; The current or electricity (4) is completed in the ion cloth. Open circuit or current adjustment. Process 2: In the middle, the current or voltage she completed in the ion implantation according to Tai Gong < feedback or closed-circuit adjustment of the ion beam current. The ionic cloth is not used for fine, and it is used for the electric=road associated with the implanter; the inclusion " is connected in series, and the high dust switch is operable to interrupt The electric, = power supply for the arc in the implant system is extinguished, and it is operable to re-establish the 200809901 vertical current to the electrode. The system also includes a trigger control circuit operative to detect a change in current or voltage associated with the electrode and to control one or more HV switches to open or close in accordance with the detection. Finally, the system includes one or more protection circuits, each associated with one of the high voltage switches, and operative to absorb energy from reactive components external to the individual HV switches, and to limit across the switches Excessive voltage. In order to achieve the above and related objects, the following description and the accompanying drawings are intended to illustrate the way. Other aspects, advantages and novel features of the invention are apparent from the description of the invention. DETAILED DESCRIPTION OF THE INVENTION The present invention will now be described with reference to the drawings, in which the same reference numerals are used to refer to the same elements. In fact, the drawings and the following description are merely representative and non-limiting; therefore, it will be understood that variations of the systems and methods depicted, as well as other implementations in addition to those described herein. The examples are considered to be within the scope of the invention and the scope of the patent application. The present invention relates to extinction forming an arc between, for example, a high voltage extraction or suppression electrode associated with an ion source of an ion implantation system. The arc extinguishing circuit in question will mitigate the irregular ion beam current that would occur during arcing and avoid, for example, uneven ion implantation. According to the present invention, a high voltage high speed π 200809901 (HVHS) switching circuit including a HVHs switch (65 KV, up to 200 MHz MOSFET switch) is added in series with a high voltage supply to, for example, a suppression and/or extraction electrode, or a ground electrode, to Extinguish harmful arcs. When this HV arc occurs, the high voltage capacitors of the hv power supplies can be discharged almost completely. 'This depth of discharge will abruptly affect the beam current and then require considerable time to recover the power supply voltage and ion beam current I. The beam 'the high-voltage high-beam switches have recently become a manufacturable item, and thus it is known that the application of the arc-extinguishing circuit in combination with the present invention is controlled by the trigger circuit in the application of the arc-extinguishing circuit in combination with the present invention. The circuit detects the change in current or voltage from the HV supply to the electrode. The arc extinguishing circuit also includes one or more protection circuits for the Hv switches for absorbing excess energy from reactive components surrounding the HVHS and clamping excess voltage from the HVHS switches. The protection circuits can be connected in parallel and/or in series with individual HVHSs (4). The arc extinguishing circuit of the present invention may further comprise a synchronizing circuit 1 for ordering and synchronizing the re-establishment of current and voltage of each of the three electrodes associated with the ion cloth (4) and the high voltage supply circuit. Although the HVHS arc quenching circuit of the present invention is described in terms of an ion source and an ion implanter, it will be understood by those skilled in the art that such high voltage and high speed arc extinguishing circuits can also be used for Hv and high speed arcing. For other applications that are extinguished, eg & x. X-ray equipment, accelerators, or other ion source applications. In this manner, 'an undesired arc that extinguishes the high voltage supply can be extinguished before the high voltage power supply has been largely discharged and has an opportunity to affect the output of the associated system (eg, the ion beam of the ion implanter) 12 200809901 First of all, referring to the first reference, the Fig. 1 diagram is a block diagram showing the representativeness of the high-pressure supply state for the ion source suitable for implementing one of the present inventions. The arc extinguishing circuit 丨 0 ^ φ 4 100. The circuit 1 〇〇 includes a high voltage power supply state 102; a south dust high speed HVHS switch 1 〇 4; a current transformer (ct) 106 for detecting the supplier 102 to a change in the current of the primary ion source 120 for generation of ions in the form of ion beam 130, such as the number of ions taken from the ion source 130. The supply current to the ion source 12 0 The change is also detected by CT 1〇6 and the trigger control circuit 1 0 8

I ‘Gua Dabo ’' The trigger control circuit 1 〇8 turns on the HVHS switch 1〇4. The HS 1 〇4 series are separately protected by the parallel and series protection circuits η 〇 曰5 to absorb the energy from the reactive components around the switch 104 and protect the switches from excessive power. The protection circuits ιι〇 and U5 also protect switch iQ4 and ion implants from other components by damping any vibration induced by the switched transient and 纟hvhsι4 external = reactance components. The electric fox extinguishing circuit (10) can be used in any ion implanted state, or other applications such as high voltage supplies that would use (iv) an arc discharge to the output of the supply. For example, the arc extinguishing circuit 100 can detect a current surge at the extraction electrode or at the output of the ion source, for example, in the ion beam current, in the CT 1〇6 when the arc occurs within the ion source 120. Operation, the trigger control circuit 108 receives the current surge detection from CT 1〇6 and sequentially controls the HVHS switch 104 to be turned on; when the HVHS switch 1〇4 is turned on, the arc current passing through ct 〇6 is Lowering to almost zero, and the arc will be destroyed or "extinguished," the inventors of the present invention have further discovered that after the HVHs switch 13 200809901 is closed again, or from the arc remains redundant in this area. The conductive gas by-product will cause the arc to re-generate before the arc, and the arc must remain extinguished B, J for a limited time gate or moon. Therefore, in the trigger control circuit or in synchronous power such as 74G of I 7 diagram The delay time within the ) can provide this - delay, discussed below. Alternatively, the switch can be repeated and closed until the arc is no longer regenerated. Figure 2 depicts that the invention can be used, for example, similar to The electric map of the ^

A representative ion implantation system of an arc extinguishing circuit of a shoulder path, for example, an 'ion implant system 200 includes an ion source 12A having a plurality of extraction electrodes 208 for providing ions The ion source of the ion beam 209 of the system 200. The ion in the ion beam is analyzed in the first region 21G by using a chemical analysis magnet for filtering the unwanted amount or energy of ions by using the bias, and the f-quantity magnet 212 is operated across The magnetic field of beam path #2G9 is such that ions from ion beam 209 are biased to different orbits depending on mass (e.g., electrical 2θ). The ions that travel away from it will encounter a force, causing the individual masses of the desired mass to point toward the beam path 2〇9 and deflect the unwanted mass ions away from the beam path. Then, the ions of the ion beam 209 having the desired mass and energy are decelerated and decelerated in the second region 22, and are focused by the decomposition aperture and 23 2 by Yu Fan, Tu &#; The cup 234 is measured and adjusted by the plasma shower 236 for space charge neutralization in the region 230. Finally, ions enter terminal station 240 for implantation in wafer 242 and for measurement by dish Faraday cup 244. 14 200809901 = During the ion implantation period, the electric 5 205 will occur between, for example, the ion source phase extraction, suppression, or ground electrode. In the conventional planting system ♦, this electric is a right-handed household 罨 arc /, there is a tendency to completely discharge the high-voltage supply before the arc self-extinguishes. For example, Zeng, brother 1's arc extinguishing circuit i is designed to avoid this problem. ° / For example, Figure 3 depicts the change in beam current caused when an electric orphan occurs in the high-voltage extraction and suppression voltages of the ion implant system of Figure 2, a similar ion implanter. The figure is 3〇〇.

For example, the graph 3 of Fig. 3 depicts that the arc discharges the voltage Η from about 2·2 κν in about 〇2 〇 315. To almost 〇 v. f is about the same time, the suppression voltage 320 drops from about _9·3 κν to almost 0 V ' and the beam current 1 beam 33G drops to almost G volts, the electricity 5 曰 self, 'off' These voltages can be repacked towards their original voltage level. As shown at 34〇, the extracted voltage overshoots the original voltage' and can undesirably delay the recovery of the beam current radiance beam until approximately (four) 345. It can be observed from Figure 3 (10) that the electrode privacy has a considerable and lasting effect on the beam current. Therefore, Figure 3 shows that the Hv supply has a considerable and long-lasting shadow: : This 'Fig. 3 shows that it is advantageous to have a large number of discharges in the HV supply, < high speed current path between the electrode for the ion beam and the high voltage supply for the electrode. The HVHS switch of the present invention accomplishes this goal. Fig. 4 depicts a generation having a high positive pressure extraction supply 403 to supply the extraction pocket 404, and a high negative pressure suppression supply 406 to supply the suppression electrode 4〇8 adjacent to the grounding electrode 200809901 pole 409. The HV suppression supply side has a == sub-planting system_one part and the current limiting resistor 412 is used to clamp or protect the circuit (4) Capacitor wave and stability supply::Electrical to limit the arc on/off cycle by ^ ^ ^ ^ The package is resistant to any of the pieces produced by = (4). However, in the context of the present invention, it is also possible to combine the HVHS switch of the present invention (e.g., 1-4 of Fig. 1) to protect the HVHS switch from damage. A representative arc extinguishing circuit 500 for use in association with a Μ supply $ between ion sources for use in an ion implant system can be used in accordance with the present invention. For example, the arc quenching circuit 5A includes: a high voltage negative supply (vb) 5〇3 connected in series with HVHS_5〇4 (eg, a series stacked MOSFET transistor); and a series switch protection circuit, Drive the load (eg ion source 12〇). The electrical orbital converter further includes a current transformer CT 506 that varies the current in the tilting supply 5〇3 to the ion source 12〇 to be used, for example, to generate an ion beam (eg, the ion beam of FIG. 1). 130) The number of ions to be extracted. The circuit 500 also includes a trigger control unit 5〇8 for detecting a change in current in the supply current (Iext) 509 to the ion source 12A. 'If the current spur of the second arc is detected by the CT 506 out of the supply current ("μ) 5〇9, the trigger control circuit 508 controls the HVHS switch 5〇4 to turn the arc on and off. The capacitance ci 518 in the load (eg ion source 12〇) and the voltage (Va) at the load are isolated from the high voltage supply 5〇3 by the HVHS switch 5〇4. Therefore, the load C1 518 The Va of 16200809901 will be discharged due to the occurrence of the arc, but the negative supply voltage vb will be substantially maintained at the appropriate voltage, which is isolated by the HVHS switch 5. Again, the HVHS switch 504 Separately protected by parallel and series spectral circuits 510 and 515 to absorb energy from the reactive components external to the switch, and thereby protect the switch from being subjected to excessive voltage damage. The arc extinguishing circuit 5 of the present invention Used in any ion implanter, or other applications such as high pressure suppliers that accept arc discharge to the output of the supply. Gates 6A and 6B depict, in association with the ion source Extraction of electricity During the arcing, the arc quenching effect of the arc extinguishing circuit #HVHS_ of the present invention, which is tested in air (for example, 600 of Figure 6) and vacuum (e.g., 65 of Figure 6B), is tested. What will be shown by the figures is that the arc tested in the air as shown in the graph 650 of Figure 6B is more easily extinguished in the actual vacuum environment because of the relative vacuum environment. In the arc, there will be: ^ = the heat is generated in the air around the arc generated by the air. :, and the pattern of the brother 6A is used to describe the HVHs switch circuit is difficult to maintain: Jb negative supply The stability effect on the voltage of the device, even in the environment where the more difficult and defensive gas is filled in. (Example: Figure 6A depicts the 20R and the image of the ion source in the air source. 〇) associated IGBT switches (eg, the second circuit (eg, during the arc, open and close (four) 500 arc of the invention) (eg, Figure 17 200809901 5〇1\Arc A graph 600 of the annihilation effect. For example, Figure 6A depicts when j port 6l〇a and the power across the HVHS switch 504 when turned on 610b [1〇 the high voltage supply Vb 630 in the supply state 503, and the high voltage Va62〇 observed, for example, at the load (eg 120). Before 0, the high voltage supply Vb 63〇 is about _6 κν, and the high voltage supply Va 620 at the load is also about 6 κν. At time 0 0, the arc occurs at the high voltage supply Va 62Ό at the load, and the voltage is fast. The ground is lowered from about 6 κν at 62〇a to about I·6 κν at 62〇fc. The response detected by the CT 506 is received by the trigger control circuit 5〇8 and is controlled by the HVHS switch 5〇4 as shown at 610b. After approximately 〇6 ms (ms), since the hvhS switch is turned on, the genset begins to extinguish and the supply voltage at the load begins to recover, as indicated by Va 620, and as indicated by the open voltage 61 〇e. Since the arc sub-aperture is not completely dissipated and the current HVHS open relationship is closed, the arc will self-rebuild and begin to draw enough current to re-open the switch 504, such as the switching voltage 610b between approximately 0. 7 and U milliseconds. And Va 620 • shown. Moreover, after about another 0.6 milliseconds, at 1.2 milliseconds, because the HVHS switch is turned on, the arc begins to extinguish and the supply voltage at the load begins to recover somewhat, as shown by Va 620b, and when switch 504 is reclosed. The switching voltage 610d is shown. However, at this point, the Va 620 did not have a chance to fully recover, so when the switch was reclosed at 6 1 0d, the Va 620 arc would discharge to approximately 〇 v. The arc extinguishing circuit is then turned on by the HVHS switch 504 at approximately 61 pm at approximately 61 pm, 18 200809901 and Va 620d is maintained at approximately 1 > 6 KVs 62 until approximately 175 seconds per second when the HVHS switch 5 〇 4 Reclose (not by switch voltage 6l〇a) and Va 620 recharge to approximately 6 κν at 62 〇. Since the high voltage Vb (4) of the HV supply H 503 is maintained relatively stable, the fast recovery of the Uv 62G by the fast switching action of the hvhs switch 5 〇 94 controlled by the arc extinguishing circuit 5 本 of the present invention is feasible.

Similarly, '帛6A' depicts an extraction electrode (eg, the flag of Figure 2) associated with an ion source such as an ion implanter (eg, the first and the figure (3)) as tested in an actual vacuum environment. During the arcing, a graph of the relative amplitude levels of the signals provided by the electrical 5-compilation circuit (e.g., 5GG of Figure 5) in accordance with the present invention (4). Figure 6b is a step-by-step description of the extraction electrode current M Vex 670 powered by a high positive supply voltage during the opening and closing of the HVHS switch (504 of the ^^ η λ \ I brother 5 diagram). And when the current in the Vex power supply (for example, triggered by the derived Vex trigger control signal _, and with the suppression of the power supplied by the high supply voltage, the measured Farrell current is programmed. 6B further depicts that the electric castle WO field across the HVHS switch 5〇4 when the open relationship is closed at _ and the open relationship is open at 67〇b, the Vb 630 is supplied to the high dust supply vh Μη 4 of the supplier 503, And, for example, at the load (for example, 120), the high pressure vb 62〇 of the burnt offering. Before the time 〇·〇, the person is Lei Yi and Yi Lei, the ancient TH rape, the field x raw%, the detected Faraday ^ positive / 66G is in the high level of 66Ga, the poetry electrode is repeatedly Vex670 ^ source supply of electricity in the high positive « level _, used for electricity. The high power supply voltage of the electric ridge is high in the positive power repeatedly 19 200809901 Quasi-690a, and the Vex trigger control signal 68 is at a high level "Μ. At time 0·0, the arc occurs, for example, The high voltage supply at the Vex electrode (eg Va 620) and the Vex 670 and Vsup 690 voltages are quickly lowered to a low level voltage, as shown at 670b and 690b, respectively. The response is, for example, detected by the CT 506. The current is received by the trigger control circuit 5〇8 and provides a low level 68〇b on the Vex trigger control signal 68〇 to control the HVHS switch 504 to turn on, such as 670b. In addition, the detected Faraday current I. Faraday 660 is lowered to a low current level of 66 〇 b. The HVHS switch is turned on before the head 10, and after about 〇·3 ms, the VR trigger control signal 680 returns to the 680a level to indicate that the arc has Off, and the Vex trigger control signal 680 controls the hvhs switch to reclose, and in response, the Vex 670 returns to level 670a. Thereafter, at approximately 0.6 milliseconds, and with the arc extinguished, the supply voltage at the load Beginning to fully recover for Vsup 69〇 to revert to the Vsup 690a level, and then quickly, at approximately 〇65 milliseconds to 〇7 milliseconds, beam current recovery is restored as shown in Faraday 66〇 To 660a Therefore, it is shown that the arc extinguishing circuit of the present invention can extinguish an arc in a high voltage electrode such as an ion implanter and minimize the length of the ion beam failure to about 〇7 msec. A simplified schematic diagram of a representative arc extinguishing circuit 700 for use in an ion implanter in accordance with several aspects of the present invention. The arc extinguishing circuit 700 is similar to the arc extinguishing circuit of Figures 4, 5 and 5 in a number of ways, and thus, For the sake of brevity, it is not necessary to fully describe it. Circuit 7〇〇

Use HVHS switches (a, b, and C) 704 (such as series stacked MOSFET 20 200809901 transistors) for three separate high voltage power supplies in the ion implanter (

In 7〇3, -Vsupl 731, and _Vsup2 732), the arc extinguishing circuit 7〇〇 also includes a current transformer (CT1, 2, and 3) for detecting current surges in each individual high voltage supply. And received by the trigger control circuit 7〇8, and when the current rush representing the arc 725 is detected, for example, the extraction electrode or the arc crack 720, the suppression electrodes 721 and 722, or the individual ion beam electrodes of the ground electrode 724 When the switches A, b, C 7〇4 are controlled to control the switches AB, C 704 are turned on. As illustrated and in accordance with one aspect of the present invention, individual electrode suppliers (e.g., Vext 703, -Vsupl 731, and _Vsup2 732) can independently arc to ground or to another electrode, and thus, each of the supplies can be Protected by one of the HVHS switches. The arc extinguishing circuit 700 further includes an arc protection circuit 715 having a current limiting resistor (4), 2, A3) 7 (1) crossing the wave (C1 '2' and 3) 714, and a flyback diode (D1) , 2, and 3) 716, to protect the HVHS „7〇4 from switching transients, and other excess voltage induced by the reactive components of the circuits associated with each HV supplier. The circuit 700 also uses the synchronization circuit 74A such that the supply power a to the respective individual horsepower electrodes m'721, and 722 is reordered and synchronized. For example, it can be determined that Synchronization circuit 74〇: Reclose switch B&c7()4 before newly closing switch A. The further one's 1 step circuit 740 can provide a delay between % for reapplying each individual. The relationship between the four or four switches of the number of HVHS switches 21 200809901 is re-applied and/or re-opened with respect to each other or in series or in parallel with the respective HV suppliers.

It will be appreciated that a 6 U custom adaptive switching and synchronization control can be used as a variation of the Synchronous Thunder 740 in the context of the present invention, wherein the changed current is monitored and used. , voltage έ k , electric & infrared or other wavelengths of light energy, or associated with the arc 7 2 5 or 矣 ^ rs 柳 : 3 3 3 3 3 3 3 3 3 3 3 表 表 表 表 725 725 725 725 725 725 725 725 725 725 725 725 725 725 725 725 / trampoline and sequence to supplement the staff or further alleviate these

A variation of the supply sensed by the arc. Moreover, it will be understood that the HVHS% switches can be switched to one or more particular frequency modulations or provide dynamic pulse width control of several electrode voltages and/or beam currents in response to arc detection. . In addition to the electrode arc's debt and: L-off, it is also possible to provide a total of Hv power supply modulation in response to the known non-uniformity of the charge (for example, the special beam current can be expected) Non-uniform sentence). (d) It is understandable that although this modulation is used to obtain a uniform dose on wafer i, it can also be used to obtain any silent contours in which the homogeneity is only a subset of the general conditions. Progressively, it will be appreciated that the arc extinguishing circuit of the present invention can be used prior to implantation and during implantation. Alternatively, the beam current can be monitored, and when the electrode is arcing, the arc is controlled to extinguish the circuit, or a relatively constant beam current is adjusted in response to changes in the HV supply. The representative protection according to one or more aspects of the present invention can be used in conjunction with the switch 8〇4 or with the HVHs 22 200809901 switch 804 to absorb the reactance from the outside of the individual HV switch 804. The energy of the component and the excess voltage across the switch. The protection circuit 810 can also dampen any ringing induced by the switching transient from the HVHS switch 804. The protection circuit 8 10 is similar to the protection circuit of FIG. 1 1 and FIG. 5 1 , and the protection circuit 8 10 includes a series capacitor cs.

This is connected in series with a parallel combination of the series one body Ds and the series resistor Rs. The protection circuit 810 is wired in parallel with the HVHS switch 804. The HVHS open 804 includes a HVHS switch (e.g., a MOSFET transistor stacked in series) and a diode Dp connected in parallel with the switch. For example, the HVHS switch 804 can be configured with a parallel diode Dp or can be provided without the parallel diode Dp. It will be understood that, in the context of the present invention, more than two of these HVHS switches may be connected to each other or in series or in parallel with the HV supply, "cannoning and disconnecting, ion implanters, or for example The arc generated by any other equipment using a high voltage power supply. It will be understood that the aspects described herein are equivalently applicable to the main beam current of the ion source, the RF or microwave power of the microwave ion source, and the application. No arc discharge power supply. It has been described and condensed in the above paragraphs with respect to several viewpoints and examples. However, it will be understood that the changes and corrections made by the cage to the w 4 will be generated when the skilled person learns and Understand the circumstances and the drawings. In particular, regarding various functions performed by the above components (combination, .... circuit, cymbal, etc.), HI ffl ^ ^ 迩Μ 4, and terms of the parts are used (including "Institution,, ' Unless otherwise stated, the terminology is intended to correspond to any component that can perform the specific functions of the component (ie, in the temple), even if any of these components The structure is not the same as the structure of the present invention: the function depicted in the representative embodiment of the present invention: the external characteristic, although the special characteristics of the present invention have been compared with a few real And when it is advantageous to any given or combined, the characteristics may be combined with one or more of the other embodiments. Further, the terms "including,", "including", :, '', The term "r η / 备" in '' ' is described in detail in the detailed description or in the scope of the patent, and is intended to cover such terms in a similar way to the term "its features include". The term "representative" used merely refers to the example rather than the most precise implementation. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic block diagram depicting a member of an ion-disintegrating device that extinguishes an arc associated with an ion source of an ion implanter in accordance with one or more aspects of the present invention; The figure is a simplified block diagram of a representative ion implantation system that can use the arc extinguishing circuit of the present invention; FIG. 3 is a beam current of the ion implanted during the arcing of the high voltage electrode of the ion implantation system of FIG. And a pattern for extracting and suppressing the change in voltage; FIG. 4 is a schematic illustration of a representative suppressor electrode high voltage supply circuit such as a conventional electric 5 melon suppression circuit that can be used in an ion implantation system. 200809901 5th Figure is a simplified block diagram of a representative arc extinguishing circuit for use in connection with a high voltage supply such as that which can be used in an ion implantation system; 6A and 6B are depicted in an ion source A graph of the arc extinguishing effect of the HVHS switch of the arc extinguishing circuit of the present invention tested in air and in vacuum during the arc period of the associated extraction electrode; Figure 7 A simplified schematic of a representative arc-extinguishing circuit used in an ion implanter, using a HVHS switch for the three benefits of the ion implanter' and using a synchronization circuit to enable the depiction and ion implantation The re-establishment of the current and voltage of each of the three electrodes and the high voltage supply circuit associated with the system is sequenced and synchronized; and Figure 8 is such that it can be used to bridge the HVHS switch in accordance with one or more aspects of the present invention. Or a schematic diagram of a representative protection circuit that is in series with the HVHS switch to absorb the energy from the reactive components external to the individual HV switches and to limit the excess voltage across the switch. [Key Symbol Description] 100, 500, 700 102 104, 504 , 610, 704, 804 106, 506 108, 508 arc extinguishing circuit high voltage power supply high electric high speed HVHS switching converter (CT) trigger control circuit 110, 115, 510, 515, 715, protection circuit 810 25 200809901 120 ion Source 130, 209 ion beam 200, 400 ion implantation system 205 arc 208 extraction electrode 210 first zone 212 mass analysis magnet 220 second zone 230 zone 232 decomposition hole And speed reducer 234 device method connected to cup 236 plasma shower 240 end point 242 wafer 244 dish Faraday cup 300, 600, 650 pattern 310 extraction voltage 315, 345 time 320 suppression voltage 330 beam current 403 high positive pressure Extraction supplier 404 extracts crack 406 high negative pressure suppression supply 408 suppression electrode 26 200809901

409 Grounding electrode 410 Conventional arc suppression or protection circuit 412, 712 Current limiting resistor 414, 714 Capacitor 416, 716 Returning diode 503 High voltage negative supply voltage (Vb) 509 Supply current (Iext) 518 Capacitance Cl 704 Switch 720, 721, 722 high voltage electrode 740 synchronization circuit

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Claims (1)

200809901 X. Patent application scope: 1 · An arc extinguishing circuit, which is used in combination with an ion source of an ion implantation system, and includes or a plurality of high voltage switches, which are connected in series with the ion source supplier; W 4〇, connected to make a current interruption in the high-voltage power supply and will be: A & i, extinguished; born in the ion implantation system, one arc combined == factory power The second system is operable to detect a 5 electrical refractory associated with the ion source, and control the one or more high switches to open or close according to the current or voltage; and one or more protection circuits, each The protection circuit is connected to the high voltage switches: z::: to absorb the excess voltage from the individual high voltage switches: the 'and the clamp across the switch'. 2. The circuit of the i-th item of the patent application is as follows: the circuit system is operable to synchronize the two or more arcs of the electric circuit to the U-circuit and to time the trigger control circuit to: and close more than two high-voltage switches 1 More than two high voltages: and in addition to the + you start w 1 relationship and use to make more than two individual high voltage power supplies in series. 3. As claimed in the scope of the circuit, the associated circuit The current or voltage change (4) includes the debt measurement of the high voltage device... current surge, 4 to one of the extraction or suppression electrodes = one of the 夂 beam currents is reduced, in a suppression electrode voltage: Among the electrode inks - the drop of _. 28 200809901 4·If the scope of the eye-catching range is the first, one of the hard-shell circuits from the t/丨木 is connected in series with the high-voltage switch that it protects. 5. The circuit of claim ii, wherein one of the protection circuits is connected in parallel with the high voltage switch to which it is protected. 6 · For example, in the scope of patent application, the home road of the first guide, the other includes an extraction suppressor, which is placed close to the ion source. Where the current or voltage is to promote the ion source, wherein the current or voltage 7. The circuit detection system of claim 1 is completed during the ion implantation process. Current or voltage feedback or closed circuit adjustment. 8. If the patent application scope is the first item, the τ路穴 hot turtle flow or voltage detection system is completed in the ion 拮 妒 妒 + a ^ & or open circuit adjustment. Wherein the current or voltage is used to facilitate the feedback or current closure of the ion beam during the ion implantation process, as in the circuit detection system of claim 1 of the invention. The utility model relates to an ion implantation system, which comprises: an arc extinguishing and an N voltage switch of a high voltage power supply of the system, and the system is connected in series with an electrode device for being associated with the implanter. 'The high-voltage open relationship is operable to cause an arc to be extinguished in the ion implantation system door even though one of the current is interrupted and reconstructed'; an h trigger control circuit is operable to detect The electrode associated with % "丨L or voltage change_, off or on; and detecting and controlling one or more high voltage on 29 200809901 one or more of the protection of the thunder & ^ ^ circuit' The combination of high voltage switches is operable to absorb the energy of reactive components external to the individual pressure switches from individual sections, and to limit excess voltage across one of the switches. The circuit of the 10th item of the patent scope of Shenyue includes a synchronization circuit, the synchronization circuit Sun A, and the 寻 触发 以 以 以 以 以 以 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个 两个The trigger control circuit is used to open and close the two high voltage switches for the turtle; 12 ·If applying for a patent||The circuit of the 10th item of the Fife J target, the current or the electric stagnation associated with the electrode, the detection of the change includes detecting the current to the electrode a surge, a current surge in the high voltage power supply, a decrease in one of the ion beam power/melon, a decrease in one of the suppression electrode voltages, and a drop in one of the extraction electrode voltages One. 13', as in the circuit of claim 1 (), wherein the protection circuits are connected in series with the high voltage switch to which they are protected. 14. The circuit of claim 1 () wherein one of the protection circuits is connected in parallel with the high voltage switch to which it is protected. 15. The circuit of claim 1 wherein the electrode comprises an extraction suppression circuit disposed adjacent to an ion source used in the ion implantation system. 16. A circuit as claimed in claim 15 further comprising a high voltage power supply for the ion source, and wherein the arc extinguishing circuit is operable to extinguish an arc associated with the ion source. β, as in the circuit of claim 1 (), wherein the current or voltage detection is completed during the ion implantation process to facilitate feedback or closed circuit adjustment of the current or voltage of the electrode 30 200809901. The circuit of claim 1 (), wherein the current or voltage detection is completed prior to the ion implantation process to facilitate open circuit adjustment of the current or voltage of the electrode. 19. An ion implantation system, comprising · an ion source for generating - a quantity of ions that can be extracted in the form of an ion beam having a beam current; a rolling switch connected in series with the high voltage power supply One of the current interruption and reconstruction is an electric isolation; For the electrode associated with the implanter, the open-press relationship is operable to cause the electrode to be associated with one or more high-voltage-trigger control circuits generated in the ion implantation system, a current or voltage change, the switch is turned on or off; and the system is operable to detect and control the circuit according to the detection One phase, the scholar, and the 'high-voltage switch's thunder production - from the seven ~ 曰 彳 old pressure switch external reactance 70 pieces of n, and limit the excess voltage across the switch. XI. Schema: as the next page 31