TW200807020A - Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method - Google Patents

Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method Download PDF

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Publication number
TW200807020A
TW200807020A TW096120781A TW96120781A TW200807020A TW 200807020 A TW200807020 A TW 200807020A TW 096120781 A TW096120781 A TW 096120781A TW 96120781 A TW96120781 A TW 96120781A TW 200807020 A TW200807020 A TW 200807020A
Authority
TW
Taiwan
Prior art keywords
layer
substrate
multilayer mirror
pressure compensation
reflective layer
Prior art date
Application number
TW096120781A
Other languages
English (en)
Chinese (zh)
Inventor
Fumitaro Masaki
Akira Miyake
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200807020A publication Critical patent/TW200807020A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW096120781A 2006-06-09 2007-06-08 Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method TW200807020A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006160512A JP2007329368A (ja) 2006-06-09 2006-06-09 多層膜ミラー、評価方法、露光装置及びデバイス製造方法

Publications (1)

Publication Number Publication Date
TW200807020A true TW200807020A (en) 2008-02-01

Family

ID=38822379

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096120781A TW200807020A (en) 2006-06-09 2007-06-08 Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method

Country Status (4)

Country Link
US (1) US7771898B2 (https=)
JP (1) JP2007329368A (https=)
KR (1) KR100877639B1 (https=)
TW (1) TW200807020A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452440B (zh) * 2008-06-04 2014-09-11 Ａｓｍｌ荷蘭公司 多層鏡及微影裝置
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090252977A1 (en) * 2008-04-07 2009-10-08 Canon Kabushiki Kaisha Multilayer film reflector
DE102008042212A1 (de) 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009032779A1 (de) * 2009-07-10 2011-01-13 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2012041697A1 (en) * 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
JP6093753B2 (ja) * 2011-03-23 2017-03-08 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖミラー機構、ｅｕｖミラー機構を備えた光学系、及びｅｕｖミラー機構を備えた光学系を操作する方法
DE102011077983A1 (de) * 2011-06-22 2012-12-27 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines reflektiven optischen Elements für die EUV-Lithographie
KR20150066966A (ko) * 2013-12-09 2015-06-17 삼성전자주식회사 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법
DE102014201622A1 (de) * 2014-01-30 2015-08-20 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Spiegelelements
DE102015213253A1 (de) 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
JP5980388B2 (ja) * 2015-07-23 2016-08-31 キヤノン株式会社 電気機械変換装置
DE102016207307A1 (de) * 2016-04-28 2017-11-02 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102016209273A1 (de) * 2016-05-30 2017-11-30 Carl Zeiss Smt Gmbh Spiegel für den euv-wellenlängenbereich
DE102016212373A1 (de) * 2016-07-07 2018-01-11 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
JP6186055B2 (ja) * 2016-07-28 2017-08-23 キヤノン株式会社 電気機械変換装置
JP6597523B2 (ja) * 2016-08-29 2019-10-30 Ａｇｃ株式会社 多層膜付基板およびその製造方法
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
JP6438544B2 (ja) * 2017-07-31 2018-12-12 キヤノン株式会社 電気機械変換装置
US11397078B2 (en) * 2020-05-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film metrology
TW202144764A (zh) 2020-05-19 2021-12-01 台灣積體電路製造股份有限公司 用於評估基板上的薄膜厚度的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011646A (en) * 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
US6134049A (en) * 1998-09-25 2000-10-17 The Regents Of The University Of California Method to adjust multilayer film stress induced deformation of optics
KR20000024882A (ko) * 1998-10-02 2000-05-06 전주범 박막형 광로 조절 장치의 제조 방법
US6387572B1 (en) * 1999-09-13 2002-05-14 Intel Corporation Low CTE substrate for reflective EUV lithography
JP4320970B2 (ja) * 2001-04-11 2009-08-26 株式会社ニコン 多層膜反射鏡の製造方法
US6756163B2 (en) * 2002-06-27 2004-06-29 Intel Corporation Re-usable extreme ultraviolet lithography multilayer mask blank
US7056627B2 (en) * 2002-08-23 2006-06-06 Hoya Corporation Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask
US7326502B2 (en) * 2003-09-18 2008-02-05 Intel Corporation Multilayer coatings for EUV mask substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452440B (zh) * 2008-06-04 2014-09-11 Ａｓｍｌ荷蘭公司 多層鏡及微影裝置
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Also Published As

Publication number Publication date
US20070287076A1 (en) 2007-12-13
US7771898B2 (en) 2010-08-10
JP2007329368A (ja) 2007-12-20
KR20070118033A (ko) 2007-12-13
KR100877639B1 (ko) 2009-01-08

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