TW200805482A - Treating device and manufacturing method for substrate - Google Patents
Treating device and manufacturing method for substrate Download PDFInfo
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- TW200805482A TW200805482A TW96113890A TW96113890A TW200805482A TW 200805482 A TW200805482 A TW 200805482A TW 96113890 A TW96113890 A TW 96113890A TW 96113890 A TW96113890 A TW 96113890A TW 200805482 A TW200805482 A TW 200805482A
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- Prior art keywords
- gas
- ozone gas
- substrate
- humidified
- heating
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- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims abstract description 116
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000007788 liquid Substances 0.000 claims abstract description 52
- 239000011261 inert gas Substances 0.000 claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 241000266847 Mephitidae Species 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 44
- 150000002500 ions Chemical class 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000004380 ashing Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 15
- 238000005187 foaming Methods 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000008267 milk Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000006260 foam Substances 0.000 description 4
- 210000004080 milk Anatomy 0.000 description 4
- 235000013336 milk Nutrition 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- WGKMWBIFNQLOKM-UHFFFAOYSA-N [O].[Cl] Chemical compound [O].[Cl] WGKMWBIFNQLOKM-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
200805482 九、發明說明： 【發明所屬之技術領域】 本發明係關一種基板處理裝置及基板製造方法，用以去 除基板表面之光阻等被處理物。 【先前技術】 習知用以去除半導體機板等之表面上所附著之被處理 物（光阻等）的方法，係將濕潤後之濕潤臭氧氣體供應至被 處理物，以進行被處理物之氧化。 例如於日本專利公開第2001-223206號公報中，揭干 種基板處理裝置，包含一基板加熱裝置，使基:二:: 持尚於室溫；一濕潤裝置，利用處理液濕潤含有臭氧之氣 體以得到濕潤臭氧氣體；一供應裝置，將含有濕潤臭氧1 氣體供應至基板表面之被處理物；及一加熱裝置，分別將 濕潤裝置、供應裝置及送氣管之温度加熱至相等於或高於 基板之溫度。 ' 該基板處理裝置將含有濕潤臭氧之氣體溫度設定為高 於基板溫度5t〜15t，透過使水分子凝結於基板表面，2 臭氧分子全面地作用於被處理物之膜，接著以清洗液洗淨 氧化之後被處理物分子。 但是，為了完全地去除不要的被處理物，該基板處理裝 置必需反覆進行被處理物之氧化程序以及氧化後之被處理 物为子的洗淨程序，而具有操作程序複雜之問題。 此外，由於該基板處理裝置必須使含有濕潤臭氧之氣體 與基板溫度間之溫度差維持於5它〜15。〇，具有需要複雜的[Technical Field] The present invention relates to a substrate processing apparatus and a substrate manufacturing method for removing an object to be processed such as a photoresist on a surface of a substrate. [Prior Art] A method for removing a workpiece (photoresist or the like) attached to the surface of a semiconductor board or the like by supplying a wetted ozone gas after humidification to a workpiece to perform a processed object Oxidation. For example, in Japanese Patent Laid-Open Publication No. 2001-223206, a substrate processing apparatus is disclosed, comprising a substrate heating device, such that the substrate is kept at room temperature; and a humidifying device is used to wet the ozone-containing gas with the treatment liquid. To obtain a humidified ozone gas; a supply device for supplying the wet ozone 1 gas to the surface of the substrate; and a heating device for respectively heating the temperature of the humidifying device, the supplying device and the gas supply pipe to be equal to or higher than the substrate The temperature. The substrate processing apparatus sets the temperature of the gas containing humidified ozone to be higher than the substrate temperature by 5t to 15t, and causes the water molecules to condense on the surface of the substrate, and the ozone molecules act on the film of the object to be treated, and then are washed with the cleaning liquid. The substance to be treated after oxidation. However, in order to completely remove an unnecessary object to be processed, the substrate processing apparatus must repeatedly perform an oxidation process of the object to be processed and a cleaning process of the object to be treated after the oxidation, and has a problem that the operation procedure is complicated. Further, since the substrate processing apparatus must maintain the temperature difference between the gas containing the moist ozone and the substrate temperature at 5 -15. Oh, there is a need for complexity
01256-TW / RTNF-004TW 200805482 溫度管理之問題。 再者，利用該基板處理裝置所進行之灰化方法，具有無 法去除經過高劑量離子注入後硬化的光阻之問題。ς是由、 於該光阻受到離子注入時的㈣而硬化，形成難以=氧 產生反應之狀態。 、 【發明内容】 本發明之目的在提供一種基板處理裝置及基板製造方 法，其簡化被處理物之去除程序’且容易進行被處理物及 濕潤臭氧氣體之溫度管理，即使是經過高劑量離子注入之 光阻亦能夠予以去除。 ―本么月之第1方面在提供—種基板處理I置，包含一處 理室用以容納-基板；一基板加熱裝置加熱該處理室中所 谷納之該基板之—被處理物至溫度高& 18(TC ; U泰 ^體=熱裝置加熱含有處理液之濕潤臭氧氣體至溫度高 於120 c ’以及一濕潤臭氧氣體 # & ^ ^ ^ 虱虱體供應衣置將該濕潤臭氧氣 體加熱I置所加熱之該濕潤臭氧 處理物。 六虱虱骽供應至該基板之該被 本發明之第2方面在裎征 ^ I c . 在柃供一種基板處理裝置，其特徵在 置：人f t 土板處理裝置中，該濕潤臭氧氣體供應裝 二=一濕潤情性氣體產生部用以使惰性氣體通過該處理 二體=惰性氣體；及-氣體混合部用以混合該濕潤 w氣體及臭錢體，以產生該濕潤臭氧氣體。 本發明之第3方面在提 於該第i及第2方面之^理種處理襄置’其特徵在 之基板處理裝置中，包含一處理液加01256-TW / RTNF-004TW 200805482 Temperature management issues. Further, the ashing method performed by the substrate processing apparatus has a problem that the photoresist which is hardened by high-dose ion implantation cannot be removed. ς is caused by (4) when the photoresist is subjected to ion implantation, and it is difficult to form a state in which oxygen is generated. SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate manufacturing method which simplify a process for removing a processed object and facilitate temperature management of a processed object and a humidified ozone gas, even after high-dose ion implantation. The photoresist can also be removed. - The first aspect of the present month provides a substrate processing I, including a processing chamber for accommodating a substrate; and a substrate heating device for heating the substrate of the substrate in the processing chamber to a high temperature & 18 (TC; U Thai body = heat device to heat the humidified ozone gas containing the treatment liquid to a temperature higher than 120 c ' and a humid ozone gas # & ^ ^ ^ carcass supply clothing to place the humid ozone gas Heating the wetted ozone treatment heated by the I. The sixth aspect of the invention is supplied to the substrate. The second aspect of the invention is in the form of a substrate treatment device, characterized in that: In the ft earth plate processing device, the humidified ozone gas supply device 2 is a humid gas generating portion for passing the inert gas through the processing body = inert gas; and the - gas mixing portion is for mixing the wet gas and the smell The third aspect of the present invention is directed to the substrate processing apparatus of the first and second aspects, characterized in that the substrate processing apparatus includes a processing liquid plus
• 01256-TW / RTNF-004TW 200805482 熱裝置加熱該處理液至60°C至90°C之間。 本發明之第4方面在提供—縣板處縣置 至第3方面任一方面之基板處理裝置中，該』 六乳氣體之溼度係低於50%。 …本發明之帛5方面在提供—種基板處理裝置，其特徵在 於該第1至帛4方面任―方面之基板處理裝置中，該處理 液係為純水。• 01256-TW / RTNF-004TW 200805482 The heating unit heats the treatment solution to between 60 ° C and 90 ° C. According to a fourth aspect of the present invention, in the substrate processing apparatus according to any one of the third aspect of the present invention, the humidity of the six-milk gas is less than 50%. The substrate processing apparatus according to any one of the first to fourth aspects of the present invention, wherein the processing liquid is pure water.
本發明之第6方面在提供一種基板處理裝 1 ，該第i至第5方面任一方面之基板處理裝置中：= 虱體係為氮氣氣體、氧化亞氮氣體或氬氣氣體。 本發明之第7方面在提供一種基板製造方法，包含一基 板加熱程序，加熱容納於一處理室中之一基板之被處理物 至溫度高於180°C ; —濕潤臭氧氣體加熱程序，加熱含有 處理液之濕潤臭氧氣體至溫度高於l2〇〇c ;以及一濕潤臭 氧氣體供應程序，將該濕潤臭氧氣體加熱程序中所加熱之 該濕潤臭氧氣體，供應至該基板之該被處理物。 使用本發明能夠達成下列之效果。 本發明中，包含於濕潤臭氧氣體之處理液由於臭氧而具 有南親水性，因此當其附著於加熱至1 80艺以上之被處理 物時，於被處理物之表面擴散並瞬間蒸發，此時，被處理 物則被強力的灰化。此灰化是由於臭氧氣體到達被處理物 表面Bxf所形成的OH根之強氧化力所造成。當被處理物之 溫度高於180°C時，會促進此氧化反應。此外，由於濕潤 臭氧氣體之溫度被加熱至1201以上，濕潤臭氧氣體中所含 01256-TW / RTNF-004TW 7 200805482 有之臭氧氣體，係在未還原為氯氧 t ^、眾馬乳乱之狀態下供應至被處理 物。本毛明透過此等相乘效果 曰、 水政果即使破處理物為經過高劑 1離子注入而硬化之光阻，也可快速地予以去除。 此外，心本發明為—種將加熱後之濕潤臭氧氣體供應 至加熱後之被處理物之簡單裝置，可簡化處理程序’而且 被處理物及濕潤臭氧氣體之設定溫度範圍寬廣，可容易地 進行溫度管理。 β ^本發明係混合臭氧氣體與濕潤惰性氣體以產生濕潤臭 乳乳體、。亦即，由於並非使臭氧氣體於處理液中形成氣泡 以產生濕潤臭氧氣體，處理液中沒有溶解臭氧氣體，可將 高純度之臭氧氣體供應至被處理物，且即使處理液發生飛 濺的情形，亦安全無虞，其在安全面亦是有利的。 。本發明中，由於處理液加熱裝置係加熱處理液至 6(TC〜90t之間，可使濕潤惰性氣體含有大量的處理液。 本發明中，由於濕潤臭氧氣體之溼度係低於50%，水滴 不會覆蓋於被處理物之表面，可確實的將濕潤臭氧氣體供 應至被處理物之表面。 本發明中，由於處理液為純水，可降低成本並除去被處 理物。 【實施方式】 為了讓本發明之上述和其他目的、特徵、和優點能更明 頒，下文特舉本發明實施例，並配合所附圖示，作詳細說 明如下。According to a sixth aspect of the invention, there is provided a substrate processing apparatus according to any one of the first to fifth aspect, wherein the 虱 system is a nitrogen gas, a nitrous oxide gas or an argon gas. A seventh aspect of the present invention provides a substrate manufacturing method comprising: a substrate heating program for heating a workpiece contained in a substrate in a processing chamber to a temperature higher than 180 ° C; - a humidified ozone gas heating program, and heating comprises The humidified ozone gas of the treatment liquid is brought to a temperature higher than l2〇〇c; and a humidified ozone gas supply program is supplied to the object to be treated of the wetted ozone gas heated in the humidified ozone gas heating process. The following effects can be achieved by using the present invention. In the present invention, since the treatment liquid contained in the humidified ozone gas has south hydrophilicity due to ozone, when it is attached to the object to be treated heated to 180 Å or more, it spreads on the surface of the object to be treated and instantaneously evaporates. The treated object is strongly ashed. This ashing is caused by the strong oxidizing power of the OH radical formed by the ozone gas reaching the surface Bxf of the object to be treated. This oxidation reaction is promoted when the temperature of the object to be treated is higher than 180 °C. In addition, since the temperature of the humidified ozone gas is heated to 1201 or more, the ozone gas contained in the humidified ozone gas is 0256-TW / RTNF-004TW 7 200805482, which is in the state of not being reduced to chlorine oxygen t ^ Supply to the treated object. Through this multiplication effect, Ben Maoming can quickly remove the light-resistance even if the broken material is hardened by high-ion 1 ion implantation. In addition, the present invention is a simple device for supplying a heated humidified ozone gas to a heated object to be treated, which simplifies the processing procedure, and has a wide temperature range of the treated object and the humidified ozone gas, and can be easily performed. Temperature management. β ^ The present invention mixes ozone gas with a humid inert gas to produce a moisturized milk emulsion. In other words, since ozone gas is not formed in the treatment liquid to generate humidified ozone gas, ozone gas is not dissolved in the treatment liquid, and high-purity ozone gas can be supplied to the workpiece, and even if the treatment liquid splashes, It is also safe and safe, and it is also beneficial in terms of safety. . In the present invention, since the treatment liquid heating device heats the treatment liquid to between 6 (TC and 90 t, the humidified inert gas may contain a large amount of the treatment liquid. In the present invention, since the humidity of the humidified ozone gas is less than 50%, water droplets The surface of the object to be treated is not covered, and the humidified ozone gas can be surely supplied to the surface of the object to be treated. In the present invention, since the treatment liquid is pure water, the cost can be reduced and the object to be treated can be removed. The above and other objects, features, and advantages of the present invention will be apparent from the description and appended claims appended claims
01256-TW / RTNF-004TW 200805482 、本發^明之目的在提供一種基板處理裝置及基板製造方 法，其簡化被處理物之去除程序，且容易進行被處理物及 濕潤臭氧氣體之溫度管s，即冑是經㉟高劑量離子注入之 光阻亦能夠予以去除，透過使惰性氣體於處理液中形成氣 、產生濕潤惰性氣體，並混合濕潤惰性氣體與臭氧氣體 以產生濕潤臭氧氣體’接著將加熱後之㈣臭氧氣體供應 ^加熱後之光阻上，使附著於綠之處理㈣間蒸發以同 時進行光阻之灰化，來實現本發明之目的。 第1圖為本發明實施例之灰化裝置ι(基板處理裝置）之 i視圖第2圖為盍體33之内面示意圖（沿第j圖之n_n 線之剖視圖）。 灰化裴置1係用以將含有處理液3之濕潤臭氧氣 _ -，,、、、，•、八 丁n〜篮 〇 應主腔體3G内所容納之基板7(例如，外徑尺寸為3〇_ 之半導體晶圓），透過灰化(Ashing)以去除基板7表面之〉 阻7a(被處理物）。01256-TW / RTNF-004TW 200805482 The object of the present invention is to provide a substrate processing apparatus and a substrate manufacturing method which are capable of simplifying the removal process of a workpiece and facilitating the temperature of the workpiece and the humidified ozone gas s, that is,胄 is a high-dose ion-implanted photoresist that can also be removed by forming an inert gas into the treatment liquid to form a humidified inert gas, and mixing the humid inert gas with the ozone gas to produce a humidified ozone gas. (4) Ozone gas supply ^The photoresist after heating is used to evaporate between the green treatment (4) to simultaneously perform ashing of the photoresist to achieve the object of the present invention. Fig. 1 is a view showing an ashing apparatus ι (substrate processing apparatus) according to an embodiment of the present invention. Fig. 2 is a schematic view showing the inner surface of the boring body 33 (a cross-sectional view taken along line n_n of Fig. j). The ashing device 1 is for arranging the wetted ozone gas containing the treatment liquid 3 to the substrate 7 accommodated in the main cavity 3G (for example, the outer diameter is The semiconductor wafer of 3〇_ is etched to remove the resistance 7a (object to be processed) on the surface of the substrate 7.
如第1圖所不’灰化裝置i包含一濕潤惰性氣體產生裝 置1〇(濕潤惰性氣體產生部)、一臭氧氣體供給裝置用以 產生臭氧氣體5、一濕潤臭氧氣體供應裝置，其由配管 2 P4所構成，以及一腔體3〇(處理室），其連接至配管p4。 ,濕潤惰性氣體產生裝置10係用以使處理液3混合於惰 二氣體2以產生濕潤惰性氣14 4，其包含-惰性氣體供應 衣置11發泡容器12及一加熱器13(處理液加熱裝置）。 /月I氣體供應裝i 11係用以供應惰性氣體2(例如氧化 亞氮（AO)、氮氣⑽、氮氣（句等）。且第1圖中係以氮氣 -01256-TW/RTNF-004TW 9 200805482 氣體作例示性的說明。 發泡容器12中容納作為處理液3之純水（h2〇)，其為一 種使惰性氣體供應裝置U所送出之惰性氣體2形成泡沫之 密閉容器。發泡容器12中，連接於惰性氣體供應裝置i i 之配管P1之送入口 Pla設置於處理液3之液面下方，此 外，用以送出濕潤惰性氣體4之配管p2之送出口 p2a設置 於處理液3之液面上方。 _ 加熱器13係用以加熱發泡容器12内之處理液3。由於 加熱器13將處理液3加熱至6(rc〜9(rc之間，處理液3蒸 發，而使發泡容|§ 12内之上部空間12a形成含有大量氣化 後處理液3之狀態。 透過上述之結構，濕潤惰性氣體產生裝置1〇使惰性氣 體供應裝置11送入之惰性氣體2於發泡容器12内之處理 液3中形成氣泡，亦即，透過使惰性氣體2通過處理液3， 產生含有氣化後處理液3之濕潤惰性氣體4。濕潤惰性氣 • 體4從處理液3之液面到達上部空間12a，而混入上部空 間12a内之氣化後處理液3進而增加溼度後，再從配管μ 送出。 由臭氧氣體供應裝置20產生之臭氧氣體5與濕潤惰性 氣體4於配管Ρ2〜Ρ4之連接部ρ5(氣體混合部）混合後，產 生濕潤臭氧氣體6，其由惰性氣體2、處理液3及臭氧氣體 5所構成。As shown in Fig. 1, the ashing apparatus i includes a humidified inert gas generating device 1 (wet inert gas generating portion), an ozone gas supplying device for generating ozone gas 5, and a humidified ozone gas supplying device, which is provided by piping. 2 P4 is constructed, and a cavity 3〇 (processing chamber) is connected to the pipe p4. The humidified inert gas generating device 10 is configured to mix the processing liquid 3 with the inert gas 2 to generate a humidified inert gas 14 4, which comprises an inert gas supply coating 11 foaming vessel 12 and a heater 13 (heat treatment liquid Device). / month I gas supply device i 11 is used to supply inert gas 2 (such as nitrous oxide (AO), nitrogen (10), nitrogen (sentence, etc.) and in Figure 1 is nitrogen-01256-TW/RTNF-004TW 9 200805482 The gas is exemplified. The foaming container 12 contains pure water (h2〇) as the treatment liquid 3, which is a closed container in which the inert gas 2 sent from the inert gas supply device U forms a foam. In the case of 12, the inlet P1 of the pipe P1 connected to the inert gas supply device ii is disposed below the liquid surface of the treatment liquid 3, and the outlet p2a of the pipe p2 for feeding the humidified inert gas 4 is disposed in the liquid of the treatment liquid 3. Above the surface. _ The heater 13 is for heating the treatment liquid 3 in the foaming container 12. Since the heater 13 heats the treatment liquid 3 to 6 (rc~9 (rc, the treatment liquid 3 evaporates, so that foaming) The upper space 12a of the volume|§ 12 forms a state containing a large amount of the post-gasification treatment liquid 3. Through the above structure, the humid inert gas generating apparatus 1 causes the inert gas supply unit 11 to feed the inert gas 2 to the foaming vessel 12 Bubbles are formed in the treatment liquid 3, that is, through The inert gas 2 is passed through the treatment liquid 3 to produce a humidified inert gas 4 containing the post-gasification treatment liquid 3. The humidification inert gas body 4 reaches the upper space 12a from the liquid surface of the treatment liquid 3, and is vaporized into the upper space 12a. After the post-treatment liquid 3 is further increased in humidity, it is sent out from the pipe μ. The ozone gas 5 generated by the ozone gas supply device 20 is mixed with the wet inert gas 4 at the connection portion ρ5 (gas mixing portion) of the pipe Ρ2 to Ρ4, and then wetted. The ozone gas 6 is composed of an inert gas 2, a treatment liquid 3, and an ozone gas 5.
灰化裝置1中，由於連接部Ρ5設置於腔體ρ5旁，臭氧 氣體5可在尚未還原為氧氣（〇2)前，供應至腔體3〇。此外， 01256-TW / RTNF-004TW 10 200805482 灰化裝置1產生濕潤臭氧氣體6時並不使臭氧氣體5形成 氣泡，因此臭氧氣體5不會溶解於發泡容器丨2内之處理液 3中。藉此，灰化裝置丨可將高臭氧濃度之濕潤臭氧氣體6 供應至光阻7a。且由於發泡容器12内之處理液12中並無 溶解臭氧氣體5，即使泡沫四處飛散也沒有危險，該灰化 裝置1於安全面亦是有利的。 腔體30係為用以容納基板7之處理室，其包含基座3卜 間隔物32、蓋體33以及鹵素燈34。 基座31為圓盤狀構件，用以構成體3〇之基礎。 間隔物32於基板7與基座3丨間形成一間隙（例如lmm 左右），用以承载基板7以使其不會接觸到基座3 j表面。 基板7以如此懸浮方式設置之原因在於，使其不會受到基 座31表面溫度之影響。基板7承载於間隔物32上，且使 光阻7a之表面朝上。 為了於蓋體33中設置可容納基板7之空間，蓋體則 為上部封閉之筒狀構件。為了能夠容 内徑例如可為咖麵左右。為了允許基板7進；:體蓋^ β又置有啟閉裝置（切示）。蓋體33之内面設置有配管p4c 為了將濕潤臭氧氣體6噴向光阻7a，配管p4中設 :體33内面之部分設置有複數個噴出口叫。由於這些噴 出口 P4a與基板7之日、 先阻7a表面間之間隙dl例如可 二〜=右’濕潤臭氧氣體6可在新鮮的狀態下到達光 _素燈3 4加孰 基板7之光阻7a及濕潤臭氧氣體 6In the ashing apparatus 1, since the connecting portion Ρ5 is disposed beside the cavity ρ5, the ozone gas 5 can be supplied to the cavity 3〇 before it is reduced to oxygen (?2). Further, 01256-TW / RTNF-004TW 10 200805482 When the humidifying ozone gas 6 is generated by the ashing apparatus 1, the ozone gas 5 is not formed into bubbles, so that the ozone gas 5 is not dissolved in the processing liquid 3 in the foaming vessel 丨2. Thereby, the ashing apparatus 供应 can supply the humidified ozone gas 6 having a high ozone concentration to the photoresist 7a. Further, since the ozone liquid 5 is not dissolved in the treatment liquid 12 in the foaming container 12, there is no danger even if the foam is scattered around, and the ashing apparatus 1 is also advantageous on the safety surface. The cavity 30 is a processing chamber for accommodating the substrate 7, and includes a susceptor 3, a spacer 32, a cover 33, and a halogen lamp 34. The base 31 is a disk-shaped member for forming the basis of the body. The spacer 32 forms a gap (for example, about 1 mm) between the substrate 7 and the pedestal 3 to support the substrate 7 so as not to contact the surface of the pedestal 3 j. The reason why the substrate 7 is disposed in such a floating manner is that it is not affected by the surface temperature of the base 31. The substrate 7 is carried on the spacer 32 with the surface of the photoresist 7a facing upward. In order to provide a space in the lid body 33 for accommodating the substrate 7, the lid body is an upper closed cylindrical member. In order to be able to accommodate the inner diameter, for example, it can be about the coffee surface. In order to allow the substrate 7 to enter; the body cover ^ β is further provided with an opening and closing device (not shown). The inner surface of the lid body 33 is provided with a pipe p4c. In order to spray the wet ozone gas 6 to the photoresist 7a, a plurality of discharge ports are provided in the pipe p4 in the inner surface of the body 33. Since the gaps d1 between the discharge ports P4a and the surface of the substrate 7 and the surface of the first resistor 7a can be, for example, two to the right, the humidified ozone gas 6 can reach the light of the substrate 7 in a fresh state. 7a and humid ozone gas 6
01256-TW / RTNF-004TW 11 200805482 置以及濕潤臭氧氣體 即，齒素燈34同時用作為基板加熱裝 加熱裝置之熱源。 鹵素燈34為圓柱狀之構件，並設置於蓋體33之内面 ==34與光阻〜表面間之間隙们例如可為35mm 左右。i素燈34之軸向設置為水平方向，且由於光阻Μ 之表面朝上’處素燈34之光線垂直照射於光阻7&之表面， 可有效地加熱光阻7a。 此外，齒素燈34設置於配管以之正上方且平行於配管 P4,且由於其鄰近於配管p4 ’亦加熱配管p4。藉此，配管 P4内之澈潤臭氧氣體6被加熱後供應至光阻μ。 本實施例中，光阻7a被加熱至18(rc〜35〇t：之間，此外， 溼潤臭氧氣體6於供應至光心時，被加熱幻抓〜赠 之間。不將濕潤臭氧氣體6加熱至超過2⑽。c的理由為，避 免濕潤臭氧氣體6中所含有之臭氧氣體5還原為氧氣5。 如此，利用灰化裝置1所進行之基板處理方法中，光阻& 及濕潤臭氧氣體6之設定溫度範圍寬廣，可容易地進行溫 度管理。 ^ 蓋體33之内面33a上，如第2圖所示，配合蓋體33之 尺寸，設置有複數個互相平行且長度不等的鹵素燈34。此 外，如内面圖中所示，由於配管p4係搭配鹵素燈34之外 形而設置，鹵素燈34可有效且均勻地加熱配管p4。藉此， 鹵素燈34可均勻地加熱光阻7a，且配管p4可將加熱後之 濕✓閏臭氧氣體6均勻地供應至光阻7 a。 接著說明如上述結構之灰化裝置！之動作。 fll256-TW / RTNF-004TW 12 200805482 如第1圖所示，首先使用鹵素燈34加熱腔體3〇内所容 納基板7之光阻7a至溫度超過ι8〇χ：(基板加熱程序）。 接著’將惰性氣體供應裝置11所產生之惰性氣體2， 經由配管P1送入發泡容器12内。惰性氣體2於發泡容器 12内之處理液3中形成氣泡，以產生含有氣化後處理液3 之濕潤惰性氣體4,該濕潤惰性氣體4進而混合發泡容器 12之上部空間12a中氣化後處理液3後，自配管送出。 自配官P2送出之濕潤惰性氣體4與臭氧氣體供應裝置 20所供應之臭氧氣體5，於配f p2與”之連接部p5處混 。後，產生濕潤臭氧氣體6，且其於腔體30内之配管P4 内被加熱(濕潤臭氧氣體加熱程序)。加熱後之濕潤臭氧氣 體、6,從配管？4之噴出口仏被供應至腔體30内基板7 之光阻7a(濕潤臭氧氣體供應程序）。 包含於濕潤臭氧裔# a + 士 ]六虱虱體6之處理液3，由於 親水性，當附著於加埶後 、虱而/、有网 …、佼之九阻7a時，於光阻以之#； 擴散並瞬間蒸發。此時， - 3盥臭氯廣靜5，、# 门六虱祝體ό之處理液 —乳風㉟5 ’透過其強以 此外，由於光阻〜之…？化作用以灰化光阻73。 恤度為南於180。〇之高溫，促進此氲 化作用。而且，由於洚們自紅A 心延此乳01256-TW / RTNF-004TW 11 200805482 Setting and humidifying ozone gas That is, the tooth lamp 34 is simultaneously used as a heat source for the substrate heating device. The halogen lamp 34 is a cylindrical member, and the gap between the inner surface of the cover 33 == 34 and the photoresist to the surface may be, for example, about 35 mm. The axial direction of the i-lamp 34 is set to the horizontal direction, and since the light of the surface of the photoresist 朝 is directed upward to the surface of the photoresist 7&, the photoresist 7a can be efficiently heated. Further, the guillo lamp 34 is disposed directly above the pipe and parallel to the pipe P4, and also heats the pipe p4 adjacent to the pipe p4'. Thereby, the ozone gas 6 in the pipe P4 is heated and supplied to the photoresist μ. In this embodiment, the photoresist 7a is heated to between 18 (rc~35〇t: in addition, when the humidified ozone gas 6 is supplied to the optical center, it is heated between the magical capture and the donation. The humidified ozone gas 6 is not The reason for heating to more than 2 (10).c is to prevent the ozone gas 5 contained in the humidified ozone gas 6 from being reduced to oxygen 5. Thus, in the substrate treatment method by the ashing apparatus 1, the photoresist & The setting temperature range of 6 is wide, and temperature management can be easily performed. ^ On the inner surface 33a of the lid body 33, as shown in Fig. 2, a plurality of halogen lamps which are parallel to each other and have different lengths are provided in accordance with the size of the lid body 33. 34. Further, as shown in the inner drawing, since the pipe p4 is provided in a shape other than the halogen lamp 34, the halogen lamp 34 can efficiently and uniformly heat the pipe p4. Thereby, the halogen lamp 34 can uniformly heat the photoresist 7a. And the piping p4 can uniformly supply the heated wet ozone gas 6 to the photoresist 7a. Next, the operation of the ashing apparatus as described above will be described. fll256-TW / RTNF-004TW 12 200805482 As shown in Fig. 1 Show that first use halogen lamp 34 to heat The photoresist 7a of the substrate 7 accommodated in the body 3 has a temperature exceeding ι 8 〇χ: (substrate heating procedure). Next, the inert gas 2 generated by the inert gas supply device 11 is sent to the foam container 12 via the pipe P1. The inert gas 2 forms bubbles in the treatment liquid 3 in the foaming vessel 12 to produce a humidified inert gas 4 containing the post-gasification treatment liquid 3, which in turn mixes the gas in the upper space 12a of the foaming vessel 12. After the post-treatment liquid 3 is sent out from the pipe, the humidified inert gas 4 sent from the official P2 and the ozone gas 5 supplied from the ozone gas supply device 20 are mixed at the connection portion p5 of the f p2. The ozone gas 6 is wetted and heated in the pipe P4 in the cavity 30 (wet ozone gas heating process). The heated humidified ozone gas 6 is supplied into the cavity 30 from the discharge port of the pipe 4 Photoresist 7a of the substrate 7 (wet ozone gas supply program). The treatment liquid 3 contained in the wet ash-based genus #a + 士六六体6, due to hydrophilicity, is attached to the twisted, 虱, /, Net..., 佼之九阻7a, in the light resistance to #; Diffusion and instantaneous evaporation. At this time, - 3 盥 氯 氯 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广 广The photoresist is 73. The degree of the shirt is about 180. The high temperature of 〇 promotes this deuteration. Moreover, since we are red this heart, this milk is extended.
潤臭乳氣體6之溫度介於i2(rc〜2〇n： 之間，包含於濕潤臭梟廣# < ^ ^ -UU C m ^ή ^ 乳體6令之臭氧氣體5處於未# # 原至氧氣之狀態，而維持有強氧化力。 处於未被通 濕潤臭氧氣體6由於该此 、§二相乘效果而具有強轰 處理物即使為經過高劑量離子 有強乳化力，被 夠快速進行灰化。此苎損# 貝穷之光阻7a仍能 之光阻，由於離子注入而硬化，The temperature of the odorous milk gas 6 is between i2 (rc~2〇n:, contained in the wet skunk 枭 wide # < ^ ^ -UU C m ^ ή ^ The milk body 6 makes the ozone gas 5 in the ### From the original to the state of oxygen, while maintaining a strong oxidizing power. In the case of the un-wet humidified ozone gas 6 due to this, § two multiplication effect, the strong bombardment treatment is sufficient even if it has strong emulsifying power through high-dose ions. Rapid ashing. This 苎 # # Be poor light resistance 7a can still resist light, hardened by ion implantation,
01256-TW / RTNF-004TW 13 200805482 難以與臭氧產生反應，利用習知灰化裝置則難以將其去除。 此外，利用灰化裝置1所進行之基板處理方法，為一種 將加熱後之濕潤臭氧氣體6供應至加熱後之光阻7a的簡單 方法，其簡化了操作程序，而且由於光阻7a及濕潤臭氧氣 體6之設定溫度範圍寬廣，可容易地進行其溫度管理。01256-TW / RTNF-004TW 13 200805482 It is difficult to react with ozone, which is difficult to remove using conventional ashing devices. Further, the substrate processing method by the ashing apparatus 1 is a simple method of supplying the heated humidified ozone gas 6 to the heated photoresist 7a, which simplifies the operation procedure, and is due to the photoresist 7a and the wetted ozone. The gas 6 has a wide temperature range and can be easily temperature managed.
再者’由於濕潤臭氧氣體6所含有之惰性氣體2防止光 阻7a於氧化反應時產生副產物，可防止腔體3〇的污染。 有機物之分解除了產生副產物（例如碳、氫等）以外，還會 產生揮發物質（例如惰性氣體（氮等）、與臭氧氣體還原狀 氧氣反應產生之二氧化碳、水蒸氣及氨氣等），為了將副產 物與揮發物質等一起排放至腔體3()外。 此外本貝施例中，濕潤臭氧氣體6之溼度設定為5〇0/ 以下，且其溫度係設定低於光阻7a之表面溫度。這是為了 要防止濕潤臭氧氣體6到達光.阻〜之表面時，濕潤臭氧氣 體6中所含有之處理液3發生凝結等，換句話說，為了防 止光阻7a之表面形成水膜，而使得濕潤臭氧氣體6中所含 有之臭氧氣體確實地供應至光阻^之表面。 濕潤臭氧氣體6被供應至腔體3 〇咖 从 ^ “紅餸30内之後，從腔體30之 排氣口（未繪示）等排放至腔體3〇外 1 亚經由觸媒、分解裝 置（未繪示）回收，最後分解成盖宝私 ^ 刀肝肷…、告物質。此外，經過灰化 後之基板7上會產生光阻7a之殘铪 欠馀物，此殘餘物經由其後 之洗淨程序予以洗淨。 、 別工尸逆 % a 1，迻過將被 以 120 C以上之濕潤臭氧氣體，供瘫 遐供應至破加熱至。Further, since the inert gas 2 contained in the humidified ozone gas 6 prevents the light-resistance 7a from generating by-products during the oxidation reaction, contamination of the cavity 3〇 can be prevented. In addition to the production of by-products (such as carbon, hydrogen, etc.), decomposition of organic matter also produces volatile substances (such as inert gases (nitrogen, etc.), carbon dioxide generated by reaction with ozone-reduced oxygen, water vapor, ammonia, etc.), in order to The by-product is discharged together with the volatile matter or the like to the outside of the cavity 3 (). Further, in the present embodiment, the humidity of the humidified ozone gas 6 is set to 5 〇 0 / or less, and the temperature is set lower than the surface temperature of the photoresist 7a. This is to prevent the wetted ozone gas 6 from reaching the surface of the light-blocking surface, and the treatment liquid 3 contained in the wet ozone gas 6 is condensed, etc., in other words, in order to prevent the formation of a water film on the surface of the photoresist 7a. The ozone gas contained in the humidified ozone gas 6 is surely supplied to the surface of the photoresist. The humidified ozone gas 6 is supplied to the cavity 3, and after being discharged from the inside of the red crucible 30, it is discharged from the exhaust port (not shown) of the cavity 30 to the cavity 3, and the sub-channel is passed through the catalyst and the decomposition device. (not shown) recovery, and finally decomposed into Gaibao private ^ knife liver 肷 ..., sue material. In addition, after the ashing of the substrate 7 will produce the residue of the photoresist 7a owe, the residue through which The cleaning procedure is to be cleaned. The other work is reversed. A1, the wet ozone gas that will be used above 120 C will be supplied to the heat supply.
01256-TW / RTNF-004TW 14 200805482 先阻7a(被處理物），即使光阻 入而硬 a經過兩劑量離子注 化，仍能過快速地予以去除。 & 而 且，由於灰化裝置1所使 低成本並可去除光阻 用之處理液3為純水， 可降 除時間之測 量結接果著說明以灰化裝置1進行灰化時，光阻去 將測里條件5又疋為’臭氧氣體流量ΐ5υ—η 流量一而.臭氧氣體濃度則：二 ⑽广以及卿w兩者。此外，作為被處理物2 :且為經過〶劑量(劑量高於1〇lw)離子注入者，其厚度為 / 3圖純用本實施例之灰化裝置ι進行灰化時，改綠 臭乳氣體5之濃度時，光阻去除時間之測量結果表。欠 如第3圖所示，光阻之去除時間於1〇〇_瓜3時為2八 3〇秒，於150g/Nm3時則為〗分3〇秒。 刀 習知離子灰化法之處理時間上，雖然光阻之去除時間約 為30秒左右，但由於必須使真空狀態之腔體恢復到常壓， 總處理時間仍需要3分鐘左右。因此，即使與離子灰化法 相較，使用灰化裝置〗之方法仍具有足夠的性能。 / 此外，若光阻溫度為100t：以下，則供應至光阻之處理 液不會洛發而會完全覆蓋於光阻之表面，確認了會使得光 阻、臭氧氣體及濕潤臭氧氣體間無法充分產生反應。 雖然本發明已以前述較佳實施例揭示，然其並非用以限 01256-TW / RTNF-004TW 15 20080548201256-TW / RTNF-004TW 14 200805482 First resistance 7a (object to be treated), even if the light is blocked and hard a, after two doses of ion implantation, it can be removed too quickly. & Moreover, since the treatment liquid 3 for low-cost and removal of the photoresist is pure water by the ashing apparatus 1, the measurement of the reduction time can be described as a result of the ashing by the ashing apparatus 1 To measure the condition 5 as 'ozone gas flow ΐ5υ-η flow rate. The ozone gas concentration is: two (10) wide and clear w. In addition, as the object to be treated 2: and the ion implanter having a strontium dose (dosage higher than 1 〇lw), the thickness of the film is 3-5, and when the ashing device of the present embodiment is used for ashing, the green odor is changed. The measurement result of the photoresist removal time when the concentration of the gas 5 is used. As shown in Figure 3, the removal time of the photoresist is 2,8 3 seconds at 1 〇〇 _ 3, and 3 〇 at 150 g/Nm 3 . In the processing time of the conventional ion ashing method, although the removal time of the photoresist is about 30 seconds, the total processing time still takes about 3 minutes because the cavity in the vacuum state must be restored to normal pressure. Therefore, even with the ion ashing method, the method using the ashing apparatus has sufficient performance. / In addition, if the photoresist temperature is 100t: or less, the treatment liquid supplied to the photoresist will not completely cover the surface of the photoresist, which confirms that the photoresist, ozone gas and humid ozone gas are insufficient. Produce a reaction. Although the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to limit the number of 01256-TW / RTNF-004TW 15 200805482
定本發明，任何熟習此技藝者，在不脫離本發明之精神和 範圍内，當可作各種之更動與修改。因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。 01256-TW / RTNF-004TW 16 200805482 【圖式簡單說明】 第1圖：本發明實施例之灰化裝置之剖視圖。 第2圖：本發明實施例之蓋體内面之示意圖。 第3圖：顯示本發明實施例之灰化裝置杏 尤I且去除時間 之測量結果表。Various modifications and changes can be made without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention is defined by the scope of the appended claims. 01256-TW / RTNF-004TW 16 200805482 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an ashing apparatus according to an embodiment of the present invention. Fig. 2 is a schematic view showing the inner surface of the cover of the embodiment of the present invention. Fig. 3 is a table showing measurement results of apricot I and removal time of the ashing apparatus of the embodiment of the present invention.
【主要元件符號說明】 1灰化裝置 3 處理液 5 臭氧氣體 7 基板 10濕潤惰性氣體產生裝置 12發泡容器 13加熱器 30腔體 32間隔物 3 3 a蓋體内面 P1〜P4配管[Main component symbol description] 1 Ashing device 3 Processing liquid 5 Ozone gas 7 Substrate 10 Wet inert gas generating device 12 Foaming container 13 Heater 30 cavity 32 spacer 3 3 a cover inner surface P1 to P4 piping
Pla送入口 P4a噴出口 d2鹵素燈與光阻間距離 2惰性氣體 4濕潤惰性氣體 6屬潤臭氧氣體 7a光阻 N丨生氣體供應裝置 12a發泡容器内之上部空間 六氣氣體供應裳置 31基座 33蓋體 34 _素燈 P5連接部 P2a送出〇 dl嗔出口與光阻間距離 01256-TW / RTNF-004TW 17Pla feed port P4a discharge port d2 distance between halogen lamp and photoresist 2 inert gas 4 humidified inert gas 6 is ozone gas 7a photoresist N gas supply device 12a foam container upper space six gas supply slot Base 33 cover 34 _ prime lamp P5 connection P2a send 〇 dl 嗔 exit and photoresist distance 01256-TW / RTNF-004TW 17
Claims (1)
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