TW200805362A - High capacity optical storage media comprising organometallic ion pairs - Google Patents

High capacity optical storage media comprising organometallic ion pairs Download PDF

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Publication number
TW200805362A
TW200805362A TW096104615A TW96104615A TW200805362A TW 200805362 A TW200805362 A TW 200805362A TW 096104615 A TW096104615 A TW 096104615A TW 96104615 A TW96104615 A TW 96104615A TW 200805362 A TW200805362 A TW 200805362A
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Taiwan
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alkyl
unsubstituted
substituted
halogen
independently
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TW096104615A
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Chinese (zh)
Inventor
Frederique Wendeborn
Jean-Marie Adam
Jean-Pierre Bacher
Gisele Baudin
Jean-Luc Birbaum
Jean-Luc Budry
Tobias Hintermann
Yuichi Nishimae
Jitka Brynjolffssen
Suyou Liu
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Ciba Sc Holding Ag
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Publication of TW200805362A publication Critical patent/TW200805362A/en

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
    • G11B7/2498Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds as cations
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00Dyes not provided for by a single group of this subclass
    • C09B69/02Dyestuff salts, e.g. salts of acid dyes with basic dyes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00Dyes not provided for by a single group of this subclass
    • C09B69/02Dyestuff salts, e.g. salts of acid dyes with basic dyes
    • C09B69/04Dyestuff salts, e.g. salts of acid dyes with basic dyes of anionic dyes with nitrogen containing compounds
    • C09B69/045Dyestuff salts, e.g. salts of acid dyes with basic dyes of anionic dyes with nitrogen containing compounds of anionic azo dyes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
    • G11B7/2495Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds as anions
    • GPHYSICS
    • G11INFORMATION STORAGE
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    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
    • G11B7/2467Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes azo-dyes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2531Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G11B7/2534Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G11B7/2535Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polyesters, e.g. PET, PETG or PEN
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
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    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/256Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers improving adhesion between layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2572Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
    • G11B7/2575Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials resins

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

The invention, wherein the recording track comprises a compound of formula or a mesomeric or tautomeric form thereof and are each independently of the other or; is or C2-C8heteroaryl unsubstituted or mono-or poly-substituted by R47, R48, R49, and/or R50; Q1 and Q6 are each independently of the other O or S; Q2 and Q4 are each independently of the other O, S or NR51; Q3 is N or CR52; Q5 is N, or is CR14 when Q4 is O or S; Q7 is O, S, CR22R23 or NR35; Q8 and Q10 are each independently of the other CR53R54, O, S or NR55; Q9 is CR43 or N; Q11 is CR56 or N; Q12, Q14 and Q16 are each independently of the other CR57R58, O, S or NR51; Q13 and Q15 are each independently of the other CR59 or N. The structures of the cations and the substituents are defined in the description. The invention also pertains to the use of compounds of the formula (I) in optical recording with a blue laser as well as to optical recording processes wherein pits of either lower or higher reflecticity are written on a track comprising compounds of the formula (I). Hence, the invention finally also relates to an optical recording medium comprising a recording dye which is bathochromic as compared with the laser wavelength, on which medium pits of lower reflectivity are written on a higher reflectivity track.

Description

200805362 九、發明說明: 【發明所屬之技術領域】 本發明係相關於一種新穎之光學記錄材料,其具有良 好之紀錄與播放品質,尤其是在雷射波長350_50()11111下(如 5 HD DVD-R™或Bhi-rayDiscTM標準)。記錄與播放可占優勢 地具有高感度,可達到的儲存密度明顯較高於較高波長之 可紀錄材料,如約658土5nm(DVD-R或DVD+R標準)。 此外,本發明之材料具有非常好之儲存特性,在紀錄 10前後,甚至在非常嚴苛之條件下,如暴露於陽光或螢光、 熱及/或南濕度下。其製造相當簡单且立即可複製,使用一 般塗佈方法,如旋轉塗佈。 WO 04/088 649係揭示一種光學紀錄媒體,包含一廣範 圍選擇之金屬錯合物染料,並以波長約658±5 nm之雷射紀 15錄。然而,示範之染料並不適合使用於短波長雷射光束, 如 405士5 nm。200805362 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a novel optical recording material having good recording and playback quality, especially at a laser wavelength of 350_50() 11111 (eg, 5 HD DVD) -RTM or Bhi-rayDiscTM standard). Recording and playback can be dominated by high sensitivity, and the achievable storage density is significantly higher than that of higher wavelength recordable materials, such as about 658 um 5 nm (DVD-R or DVD+R standard). In addition, the materials of the present invention have very good storage characteristics, both before and after record 10, even under very severe conditions, such as exposure to sunlight or fluorescent, heat and/or south humidity. It is relatively simple to manufacture and can be replicated immediately, using a general coating method such as spin coating. WO 04/088 649 discloses an optical recording medium comprising a wide range of selected metal complex dyes and recorded at a laser scale of about 658 ± 5 nm. However, the exemplary dyes are not suitable for use with short-wavelength laser beams, such as 405 ± 5 nm.

WO 06/018 352為依據Art· 54(3) EPC與Rule 64.3 PCT 申請之專利申請案,其相關於一種光學紀錄媒體,可以波 長約658土5 nm之雷射讀取(DVD-R或DVD+R)。 20 目前已發現,某些經選擇之染料廣泛地被包含於%〇 04/088 649或WO 06/018 352中,特別適合使用於短波長, 當光碟以不同方式建構時。 EP-1 265 233係揭示一種光學資訊媒體,適用於在4〇5 nm紀錄,其使用兩種染料混合物,其中一種於紀錄波長時 200805362 之吸收為0·07。範例1使用酞氰與蒽醌染料之混合物。 US-2002/0 034 605係揭示一種光學紀錄媒體,其中該 染料係於較寫入光線更高之波長下吸收。氰染料於390-450 nm下紀錄。US-2004/0 058 274與WO 02/102 598依循相同概 5 念’具有三次曱氰(trimethinecyanine)染料。 EP-1 587 092與EP-1 587 093揭示低至高之紀錄媒體, 適用於405 nm,使用如顏色成分C (請見第1圖1,化學式1), 具下式WO 06/018 352 is a patent application filed in accordance with the PCT Application No. 54(3) EPC and Rule 64.3 PCT, which is related to an optical recording medium and can be read by a laser having a wavelength of about 658 m 5 nm (DVD-R or DVD). +R). 20 It has now been found that certain selected dyes are widely included in % 〇 04/088 649 or WO 06/018 352, and are particularly suitable for use in short wavelengths when the disc is constructed differently. EP-1 265 233 discloses an optical information medium suitable for use in the 4〇5 nm record, which uses a mixture of two dyes, one of which absorbs 0.007 at 200805362 at the recorded wavelength. Example 1 uses a mixture of cyanogen and anthraquinone dyes. US-2002/0 034 605 discloses an optical recording medium in which the dye is absorbed at a higher wavelength than the written light. The cyanide dye was recorded at 390-450 nm. US-2004/0 058 274 and WO 02/102 598 follow the same general idea as having a trimethinecyanine dye. EP-1 587 092 and EP-1 587 093 disclose low to high recording media for 405 nm, using color component C (see Figure 1, Figure 1), with the following formula

,其最 大吸收波長為542 nm,於曱醇中。 10 WO 2005/123 842係揭示使用特定具有無機陰離子之 半氰類(hemicyanine)染料於光學紀錄媒體中,其適用於藍 光雷射範圍。 然而,仍然無先前技術可有令人完全滿意之結果。此 外’同一紀錄染料並無法達到所有藍光雷射標準,其為吾 15 人高度希望的,由於由一紀錄染料轉換至另一紀錄染料, 代表需要相當多之顯影工作,以及清潔生產線之時間,且 母一種染料必須經註冊(registered)並符合每一標準。亦不希 望於同一機台中同時平行生產兩種染料。 目前發現了令人驚訝的明顯進步,使用WO 04/088 649 7 200805362 所揭示之陰離子與雜環陽離子,其較至今假設的更淺色Its maximum absorption wavelength is 542 nm in sterols. 10 WO 2005/123 842 discloses the use of specific hemicynin dyes having inorganic anions in optical recording media, which are suitable for use in the blue laser range. However, there are still no prior art techniques that can be completely satisfactory. In addition, 'the same recording dye does not meet all the blue laser standards, which is highly desirable for 15 people. Because of the conversion from one recording dye to another, it represents a considerable amount of development work, and the time to clean the production line, and A parent dye must be registered and meet each standard. It is also not desirable to produce two dyes simultaneously in parallel in the same machine. A surprisingly significant improvement has been found, using the anionic and heterocyclic cations disclosed in WO 04/088 649 7 200805362, which is lighter than previously assumed.

Hs9 .CH (hypsochromical)(如Hs9 .CH (hypsochromical) (eg

其UV/VIS最大 I CH 吸收係位於555 nm,於乙醇中)。由於範例化合物之獨特光 學特性,由高至低,以及由低至高之紀錄模式,皆令人驚 5 訝地可使用相同之紀錄染料,因而可符合二種標準。 【發明内容】 因此,本發明係相關於一種光學紀錄媒體,適用於以 波長低於600 nm,較佳350至500 nm之雷射進行光學紀錄, 包含一有溝槽之基板、一反射層,以及一記錄執道,寬度 10 自100至400 nm,較佳自150至250 nm,深度自10至200 nm, 較佳自20至90 nm,執距自250至430 nm,較佳自310至399.9 nm,其中該記錄執道包含一具下式之化合物Its UV/VIS maximum I CH absorption is at 555 nm in ethanol). Due to the unique optical properties of the sample compounds, high to low, and low to high recording modes, it is surprising that the same recording dye can be used, thus meeting the two criteria. SUMMARY OF THE INVENTION Accordingly, the present invention is directed to an optical recording medium suitable for optical recording with a laser having a wavelength of less than 600 nm, preferably 350 to 500 nm, comprising a grooved substrate and a reflective layer. And a recording pass, width 10 from 100 to 400 nm, preferably from 150 to 250 nm, depth from 10 to 200 nm, preferably from 20 to 90 nm, distance from 250 to 430 nm, preferably from 310 to 399.9 nm, where the record contains a compound of the formula

3 R Z; (I), 或其内消旋物或互變物形式,其中 15 Mi為一氧化態為+3之金屬陽離子、羥基或鹵素金屬基 團,其中該金屬之氧化態為+4,或氧合金屬基團,其中該 金屬之氧化態為+5 ; Z!為具η個正電之陽離子,其碘鹽具有UV-A或可見光 8 200805362 範圍之吸收帶,其吸收最大值係位於波長350至550 nm處, 其中該陽離子係選自於由下式陽離子組成之族群:3 RZ; (I), or its meso or tautomeric form, wherein 15 Mi is a metal cation, hydroxyl or halogen metal group in the oxidation state of +3, wherein the metal has an oxidation state of +4, Or an oxygenated metal group, wherein the metal has an oxidation state of +5; Z! is a cation having n positive charges, and the iodide salt has an absorption band of UV-A or visible light 8 200805362, and the absorption maximum is located at At a wavelength of 350 to 550 nm, wherein the cation is selected from the group consisting of cations of the formula:

9 2008053629 200805362

N^N-N^N-

I /C_- G3u| d 43I /C_- G3u| d 43

3、心為R3, the heart is R

Q R 45Q R 45

R 46R 46

QQ

In: 13 ^46N^i: 或、〇Γ4ν_ <丨In: 13 ^46N^i: or, 〇Γ4ν_ <丨

R C 14 G4R C 14 G4

RR

R 16 為R18 ~或c2-ca經取代,或經R47、R48、R49及娜 單-或多取代之雜芳基;R 16 is R18 ~ or c2-ca substituted, or R47, R48, R49 and na- or polysubstituted heteroaryl;

Ql與Q6每一者皆獨立地為〇或s; (^與仏每一者皆獨, 地為Ο S或NR51,Q4N或Cr52 ; q^n,或為CR14,‘ Q4為0或3時;Q7為0、S、CR22R23或nr35,· Q^Q10每一; 皆獨立地為CR53R54、Ο、S或nr55 ; q9為Cr4^n ; qih CR5dN ’ Ql2、Qi4與Q16每一者皆獨立地為CR57R58、〇、 10 10 200805362 或NR51 ; Ql3與Ql5每一者皆獨立地為CR59或N ; R!、R3、R4、R5、117與118每一者皆獨立地為Η、鹵素、 OR6〇、SR60、NR41R55、NR55COR61、〇SiR55R61R62、c〇R55、 CR55OR6i〇R62、N〇2、CN、COOR60、CONR63R64、so2r55、 5 S02NR63R64、S03R63 ; CrQ烧基、c2_c6稀基、c2_c6炔基、 C3-C6環院基、哀細基’或C2-C5雜環烧基,每一者皆 未經取代或經鹵素單或多取代;或C7_Cn芳烷基、c6_c10芳 基,或CrC8雜芳基,每一者皆未經取代,或經烷基、 鹵素、OR60、SR60、NR41R55、COR55、N02、CN及/或COOCi-C^ 10 烷基單-或多-取代; R2及/或1為〇、S或NR65 ; R9、Rio、Rll、R12、Rl4、Rl5、Rl6、Rl7、Rl8、R38、 R39、R40、R44、R45、R46、R47、R48、R49、R50、R52與R59, 每一者皆獨立地為Η、i素、OR66、SR66、NR51R67、 15 NR51COR68 ^ NR5iCOOR69 ^ NR5iCONR69R7〇 ' NR51CN ^ OSiR51R68R71、C0R51、CR51OR68OR71、N02、CN、COOR66、 CONR69R70、SO2R51、SO2NR69R70、SO3R69,Ci_C6烧基、 c2-c6烯基、c2-c6炔基、〇:3名6環烷基、〇3<6環烯基或c2_c5 雜環烷基,每一者皆未經取代,或經i素、OR66、SR66、 20 NR5iR67 ' NR5iCOR68 ' NR51COOR66 ' NR51CONR69R70 ^ NR51CN、C0R51、CR51OR68OR71、N02、CN、coor66、 CONR69R7〇及/或S02R69單或多-取代;或者,CVCu芳烷 基、c6-c1G芳基或crc8雜芳基,每一者皆未經取代’或經 crc4烧基、鹵素、OR66、SR66、NR51R67、C0R51、N02、 11 200805362 CN及/或COOCrC4烷基單-或多-取代;Each of Ql and Q6 is independently 〇 or s; (^ and 仏 are each unique, the ground is Ο S or NR51, Q4N or Cr52; q^n, or CR14, 'Q4 is 0 or 3 ; Q7 is 0, S, CR22R23 or nr35, · Q^Q10 each; are independently CR53R54, Ο, S or nr55; q9 is Cr4^n; qih CR5dN 'Ql2, Qi4 and Q16 are each independently Is CR57R58, 〇, 10 10 200805362 or NR51; each of Ql3 and Ql5 is independently CR59 or N; R!, R3, R4, R5, 117 and 118 are each independently Η, halogen, OR6〇 , SR60, NR41R55, NR55COR61, 〇SiR55R61R62, c〇R55, CR55OR6i〇R62, N〇2, CN, COOR60, CONR63R64, so2r55, 5 S02NR63R64, S03R63; CrQ base, c2_c6 base, c2_c6 alkynyl, C3-C6 a ring-based group, a succinyl group or a C2-C5 heterocyclic group, each unsubstituted or mono- or polysubstituted by halogen; or a C7_Cn aralkyl group, a c6_c10 aryl group, or a CrC8 heteroaryl group, each They are unsubstituted or mono- or poly-substituted by alkyl, halogen, OR60, SR60, NR41R55, COR55, N02, CN and/or COOCi-C^10 alkyl; R2 and/or 1 are 〇, S Or NR65; R9, Rio, Rll, R12, Rl4, Rl 5. Rl6, Rl7, Rl8, R38, R39, R40, R44, R45, R46, R47, R48, R49, R50, R52 and R59, each of which is independently Η, i, OR66, SR66, NR51R67, 15 NR51COR68 ^ NR5iCOOR69 ^ NR5iCONR69R7〇' NR51CN ^ OSiR51R68R71, C0R51, CR51OR68OR71, N02, CN, COOR66, CONR69R70, SO2R51, SO2NR69R70, SO3R69, Ci_C6 alkyl, c2-c6 alkenyl, c2-c6 alkynyl, 〇: 3 6 cycloalkyl, 〇3 <6 cycloalkenyl or c2_c5 heterocycloalkyl, each unsubstituted, or via i, OR66, SR66, 20 NR5iR67 ' NR5iCOR68 ' NR51COOR66 ' NR51CONR69R70 ^ NR51CN, C0R51, CR51OR68OR71 , N02, CN, coor66, CONR69R7 and/or S02R69 mono- or poly-substituted; or, CVCu aralkyl, c6-c1G aryl or crc8 heteroaryl, each unsubstituted or crc4 alkyl , halogen, OR66, SR66, NR51R67, C0R51, N02, 11 200805362 CN and/or COOCrC4 alkyl mono- or poly-substituted;

Rl3與尺35每一者皆獨立地為CrC2〇烷基、C3-C12環烷 基、CrC12雜環烷基、C2-C2G烯基、(:3-(:12環烯基、c4_c12 雜環烯基、C2-C20炔基、C7_Ci8芳烧基、Q-C9雜芳基、C2-C17 5 雜芳烧基、C6-Cn芳基’或CrC12烧基,插入一至五個不連 續之氧及/或硫原子,及/或插入一至五個與nr51相等或不同 之基團,每一者皆未經取代或經鹵素、OR66、SR66、 NR5iR67 ^ NR51COR68 ^ NR5iCOOR69 > NR51CONR69R70 ^ NR51CN、OSiR51R68R71、COR51、CR51OR68OR71、N02、CN、 10 coor66、conr69r7〇、so2r51、so2nr69r7〇、S03R69單-或 多-取代; R19、R2〇與R21每一者皆獨立地為Η、鹵素、OR66、SR66、 OSiR51R68R71、CR51OR68OR71 ; CrQ烷基、C2-C6烯基、CVC6 炔基、(:3<6環烷基、〇3<6環烯基或c2-c5雜環烷基,每一 15者皆未經取代,或經鹵素、OR66、SR66、NR51R67、 NR51COR68 λ NR5iCOOR66 ' NR5iCONR69R7〇 ^ NR51CN - COR51、CH51〇R68〇R71、n〇2、CN、COOR66、conr69r70 及/或s〇2R6單·或多_取代;或c7_Cll芳烷基、c6_Cl0芳基或 Q-C8雜芳基,每一者皆未經取代,或經Cl-c4烷基、鹵素、 20 OR66、SR66、NR51R67、(:01151及/或COOCrQ烷基單-或多· 取代; R22與R23每一者皆獨立地為CrCl2烷基、c2-c12烯基、 c2-c12快基、c7_Ci2芳烷基、c3_Ci2環烷基、c3-Cl2環烯基, 或C^Cu雜環烷基,每一者皆未經取代,或經鹵素、〇r66、 12 200805362 SR66 ^ NR5iR67 > NR5iCOR68 ^ NR5iCOOR66 ^ NR5iCONR69R7〇 ^ nr51cn、COR51、CR51OR68OR71、N02、CN、COOR66、 CONR69R70及/或s〇2R69單-或多-取代; 或者,R22與R23共同為C2_C12亞烷基、(:2-(:12亞烯基、 5 C2_cn環亞烷基,或c2-c12環亞烯基,其中一至五個不連續 碳原子可被氧及/或硫原子,及/或與NR51、c2-c12亞烷基、 CVCn亞烯基、c2-C12環亞烷基,或c2-c12環亞烯基相同或 不同之基團取代,每一者皆未經取代,或經鹵素、〇R66、 SR66> NR51R67- NR5iCOR68^ NR5iCOOR66> NR5iCONR69R7〇 ^ 10 NR51CN、COR51、CR51OR68OR71、N02、CN、COOR66、 CONR69R70及/或S02R69單-或多-取代; R24、R25、R27、尺28、尺29、R30、R31 與R32,每一者皆獨 立地為11、鹵素、(:01151、:^02、0^、3031169;或(:1-(:6烷基、 C6_C12芳基、C7-C12芳烧基’每一者皆未經取代,或經鹵素、 15 crc8烷基,及/或so3r69單-或多-取代; 尺26為鹵素、0:〇〇1166、(:€^11691170;或(:1-(:20烧基、(37-0:18 芳烷基,每一者皆未經取代,或經鹵素、CrC8烷基、COR51、 COOR66、CONR69R7〇、OR66、CN,及/或s〇3R69單-或多-取 代; 20 知為^^烧基、C2-C12烯基、(:2-(:12炔基、C7-C12# 烷基、CrCi2環烷基、Cs-Cn環烯基,或C2-Cn雜環烷基, 每一者皆未經取代,或經鹵素、〇R66、sr66、nr51r67、 NR5iCOR68 - NR51COOR66 - NR51CONR69R70 > NR51CN -COR51、CRmORmOR^、N02、CN、COOR66、CONR69R70, 13 200805362 及/或S02R69單-或多·取代; 或者,Ri4與R33共同與氮及碳原子結合,形成一5-或6-元環; R34為Η、CH3或C2H5,每一者皆未經取代,或經鹵素、 5 〇R60、SR60或NR41R55單-或多-取代; 化6與R37每一者皆獨立地為Η ; CrC12烷基、〇2<12烯 基、基、CrCi2環烧基、C3_C12環稀基,或C2-Cu 雜環烧基,每一者皆未經取代,或經鹵素、〇r6〇、§化6〇或 nr41r55單-或多取代·,或c7-cu芳烷基、c6_Cl0芳基或Cl_C8 10 雜芳基,每一者皆未經取代,或經CrC4烧基、鹵素、〇R60、 SR6〇、NR41R55、COR55、N02、CN,及/或C00CrC4院基單 -或多-取代; R4I、尺63、R64、R67、R69與R70每一者皆獨立地為Η ; C广C6院基、C2_C6烯基、C2-C6炔基、C3-C6環烧基、C3-C6 15 環烯基,或C2-C5雜環烧基,每一者皆未經取代,或經鹵素、 OR72、SR72、NR55R62、CN及/或COOR55單-或多-取代;或 C6-CiQ芳基、C7-C11芳烧基或C1-C5雜芳基,每一者皆未經取 代,或經CrC4烷基、鹵素、OR72、sr72、nr55r61、COR55、 CR55OR61OR62、N02、CN及/或COORd-或多-取代; 20 或NR63R64及/或NR69R7G為五-或六-元雜環,其更可包含 一N或Ο原子,且其可經由甲基及/或乙基單-或多-取代; R42、R43與R56每一者皆獨立地為Η、鹵素、OR60、SR60、 NR41R55、NR55COR61、NR55COOR63、NR55CONR63R64、 NR55CN、OSiR55R61R62、COR55、CR55OR61OR62、N02、CN、 14 200805362 COOR6。、C〇NR63R64、SO2R55、s〇2NR63R64、so3r63、 PO(OR55)(OR61) ; CrC6统基、CVc6稀基、C2-C6炔基、Crc6 環烧基、CVC6環浠基,或CrC5雜環烧基,每一者皆未經取 代,或經鹵素、〇r60、sr60、NR41R55、NR55COR61、 5 NR55COOR60、NR55CONR63R64、NR55CN > COR55、 CR55OR61OR62、n〇2、CN、coor60、conr63r64,及/或 so2r63 單-或多-取代;或C7-Cn芳烷基、CVCh)芳基或(^-(:8雜芳 基,每一者皆未經取代,或經CrC4烷基、鹵素、OR60、SR6()、 nr41r55、con55、N02、CN及/或COOCrC4烷基單-或多-10 取代; 或一或更多配對R9與R10、R10與Ru、Rn與R12、尺14與 R15、Rh與R2G、R14與R21、R15與R16、1115與1119、Rl^R2〇、 1116與1117、R16與r52、r17與ri8、Rl7與r2〇、r17與、r〗8 與R33、R18與R52、R2。與R52、R2^Rs2、R2々r25、汉”與心、 15 R29與 R3〇、R30與R31、R3^r32、―與“、R42與‘、心 與R56、R44與R59,及/或尺47與R48,這些配對互相獨立,且 與下式二價基團結合 R74 x77/' x73Rl3 and ruler 35 are each independently CrC2 alkyl, C3-C12 cycloalkyl, CrC12 heterocycloalkyl, C2-C2G alkenyl, (: 3-(:12cycloalkenyl, c4_c12 heterocycloalkenyl) a C2-C20 alkynyl group, a C7_Ci8 aryl group, a Q-C9 heteroaryl group, a C2-C17 5 heteroaryl group, a C6-Cn aryl group or a CrC12 alkyl group, and one to five discontinuous oxygen and/or Or a sulfur atom, and/or one to five groups identical or different from nr51, each unsubstituted or via halogen, OR66, SR66, NR5iR67^NR51COR68^NR5iCOOR69 > NR51CONR69R70^NR51CN, OSiR51R68R71, COR51, CR51OR68OR71, N02, CN, 10 coor66, conr69r7〇, so2r51, so2nr69r7〇, S03R69 mono- or poly-substituted; R19, R2〇 and R21 are each independently Η, halogen, OR66, SR66, OSiR51R68R71, CR51OR68OR71; CrQ alkyl, C2-C6 alkenyl, CVC6 alkynyl, (: 3 < 6 cycloalkyl, 〇 3 < 6 cycloalkenyl or c2-c5 heterocycloalkyl, each of which is unsubstituted, or Halogen, OR66, SR66, NR51R67, NR51COR68 λ NR5iCOOR66 ' NR5iCONR69R7〇^ NR51CN - COR51, CH51〇R68〇R71, n〇2, CN, COOR66, conr69r7 0 and / or s 〇 2R6 single or more _ substitution; or c7_Cll aralkyl, c6_Cl0 aryl or Q-C8 heteroaryl, each unsubstituted, or by Cl-c4 alkyl, halogen, 20 OR66, SR66, NR51R67, (:01151 and / or COOCrQ alkyl single- or poly-substituted; R22 and R23 are each independently CrCl2 alkyl, c2-c12 alkenyl, c2-c12 fast radical, c7_Ci2 aromatic Alkyl, c3_Ci2 cycloalkyl, c3-Cl2 cycloalkenyl, or C^Cu heterocycloalkyl, each unsubstituted, or via halogen, 〇r66, 12 200805362 SR66 ^ NR5iR67 > NR5iCOR68 ^ NR5iCOOR66 ^ NR5iCONR69R7〇^nr51cn, COR51, CR51OR68OR71, N02, CN, COOR66, CONR69R70 and/or s〇2R69 mono- or poly-substituted; or R22 and R23 together are C2_C12 alkylene, (: 2-(:12-eneene) a 5 C 2 —cn cycloalkylene group or a c 2−12 12 cycloalkenylene group in which one to five discontinuous carbon atoms may be bonded to oxygen and/or sulfur atoms, and/or to NR 51 , c 2 -c 12 alkylene groups, CVC n ia Alkenyl, c2-C12 cycloalkylene, or c2-c12 cycloalkenylene substituted with the same or different groups, each unsubstituted, or via halogen, hydrazine R66, SR66> NR51R67-NR5iCOR68^ NR5iCOOR66> NR5iCONR69R7〇^ 10 NR51CN, COR51, CR51OR68OR71, N02, CN, COOR66, CONR69R70 and/or S02R69 single- or multi-substituted; R24, R25, R27, ruler 28, ruler 29, R30, R31 and R32, each All independently are 11, halogen, (: 01151, :^02, 0^, 3031169; or (: 1-(:6 alkyl, C6_C12 aryl, C7-C12 arylalkyl) each without Substituted, or mono- or poly-substituted by halogen, 15 crc8 alkyl, and/or so3r69; rule 26 is halogen, 0: 〇〇1166, (: €^11691170; or (: 1-(:20 alkyl, (37-0:18 aralkyl, each unsubstituted or mono- or poly-substituted by halogen, CrC8 alkyl, COR51, COOR66, CONR69R7, OR66, CN, and/or s〇3R69; 20 is known as a ^2, C2-C12 alkenyl, (: 2-(: 12 alkynyl, C7-C12# alkyl, CrCi2 cycloalkyl, Cs-Cn cycloalkenyl, or C2-Cn heterocycloalkane) Base, each unsubstituted, or via halogen, hydrazine, R66, sr66, nr51r67, NR5iCOR68 - NR51COOR66 - NR51CONR69R70 > NR51CN -COR51, CRmORmOR^, N02, CN, COOR66, CONR69R70, 13 200805362 and / or S02R69 - or more · replaced; or Ri4 and R33 together with nitrogen and carbon atoms form a 5- or 6-membered ring; R34 is Η, CH3 or C2H5, each unsubstituted, or halogen, 5 〇R60, SR60 or NR41R55 Mono- or poly-substituted; each of R6 and R37 is independently Η; CrC12 alkyl, 〇2 <12 alkenyl, yl, CrCi2 cycloalkyl, C3_C12 cycloaliphatic, or C2-Cu heterocyclic Bases, each unsubstituted, or mono- or polysubstituted by halogen, 〇r6〇, §6〇 or nr41r55, or c7-cu aralkyl, c6_Cl0 aryl or Cl_C8 10 heteroaryl, each Neither unsubstituted or mono- or poly-substituted by CrC4 alkyl, halogen, hydrazine R60, SR6, NR41R55, COR55, N02, CN, and/or C00CrC4; R4I, 63, R64, R67 Each of R69 and R70 is independently Η; C-C6, C2_C6 alkenyl, C2-C6 alkynyl, C3-C6 cycloalkyl, C3-C6 15 cycloalkenyl, or C2-C5 heterocycle Alkyl groups, each unsubstituted, or mono- or poly-substituted with halogen, OR72, SR72, NR55R62, CN and/or COOR55; or C6-CiQ aryl, C7-C11 aryl or C1-C5 Heteroaryl, each unsubstituted, or via CrC4 alkyl, halogen, OR72, sr72, nr55r61, COR55, CR55OR61OR62, N02, CN and/or COORd- or poly-substituted; 20 or NR63R64 and/or NR69R7G are five- or six-membered heterocyclic rings, which may further comprise an N or a ruthenium atom, And it may be mono- or poly-substituted via methyl and/or ethyl; each of R42, R43 and R56 is independently hydrazine, halogen, OR60, SR60, NR41R55, NR55COR61, NR55COOR63, NR55CONR63R64, NR55CN, OSiR55R61R62, COR55, CR55OR61OR62, N02, CN, 14 200805362 COOR6. , C〇NR63R64, SO2R55, s〇2NR63R64, so3r63, PO(OR55)(OR61); CrC6 radical, CVc6 dilute, C2-C6 alkynyl, Crc6 cycloalkyl, CVC6 cyclodecyl, or CrC5 heterocyclic Base, each unsubstituted, or via halogen, 〇r60, sr60, NR41R55, NR55COR61, 5 NR55COOR60, NR55CONR63R64, NR55CN > COR55, CR55OR61OR62, n〇2, CN, coor60, conr63r64, and/or so2r63 - or poly-substituted; or C7-Cn aralkyl, CVCh) aryl or (^-(:8 heteroaryl, each unsubstituted, or via CrC4 alkyl, halogen, OR60, SR6() , nr41r55, con55, N02, CN and/or COOCrC4 alkyl mono- or poly-10 substituted; or one or more pairs R9 and R10, R10 and Ru, Rn and R12, ruler 14 and R15, Rh and R2G, R14 And R21, R15 and R16, 1115 and 1119, Rl^R2〇, 1116 and 1117, R16 and r52, r17 and ri8, Rl7 and r2〇, r17 and r8 and R33, R18 and R52, R2 and R52. , R2^Rs2, R2々r25, Han" and heart, 15 R29 and R3〇, R30 and R31, R3^r32, "and", R42 and ', heart and R56, R44 and R59, and / or ruler 47 R48, these pairs are independent of each other and are bivalent with the following formula Group combination R74 x77/' x73

R 75 ^80^76 '74R 75 ^80^76 '74

R. 或R. or

77/^73 7477/^73 74

7878

R79R75,因此與其鍵結 —相鄰石炭 原子形成苯、環己烯、環己二烯、環戊二烯,或環戊烯产 R51、R55、R6i、R62、R68與R71每一者皆獨立地知 15 20 200805362 苄基;或CrC4烷基、c2-C4烯基、c2-c4炔基、[c2-c3亞烷基 CHk-Rw,或[c2-c3亞烷基-NR82-]k-R81,每一者皆未經取 代,或經鹵素單-或多-取代; 或 NR51R67、概51r68、NR41R55,及/或 NR55R61為五或六 5元雜環,其更包含一N或Ο原子,其可經甲基及/或乙基單-或多-取代; R53、R54、R57與r58每一者皆獨立地為CrC12烧基、C2-C12 烯基、C2-C12炔基、c7-C12# 烷基、c3_c12環烷基、c3-c12 環烯基或c2-cn雜環烷基,每一者皆未經取代,或經鹵素、 10 OR60、sr60、nr41r55、NR55COR61、NR55COOR60、 NR55CONR63R64、NR55CN、COR55、CR55OR61OR62、N02、 CN、COOR60、CONR63R64及/或S02R63單或多-取代; 或R53與R54,及/或R57與R58共同形成(:2-(:12亞烷基、 〇2-(:12亞烯基、c2_c12環亞烷基或c2-c12環亞烯基配對,一 15 至五個未連續碳原子可經氧及/或硫原子取代,及/或與 NR55、(:2-(:12亞烷基、(:2-(:12亞烯基、(:2-(:12環亞烷基,或 c2-c12環亞烯基相同或不同之基團取代,每一者皆未經取 代’或經鹵素、OR60、SR60、NR41R55、NR55COR6I、 NR55COOR6〇 、NR55CONR63R64 、NR55CN 、 COR55 、 20 CR55OR61OR62、N02、CN、COOR60、CONR63R64&/或 so2r63單-或多取代; 每一 R60或R*66,獨立於任一其他尺60或化66 ’為R41或尺65 ; r65為 cor41、coor41、CONR63H64、CN、so2nr63r64 或 S02R63 ; 16 200805362 R72 ’獨立於任一其他r72,每一者皆獨立地為Ci-C6烧 基、C2-C6烯基、C2-C6炔基、C3-C6環烷基、C3-C6環烯基, 或C2_C5雜環烧基,每一者皆未經取代,或經鹵素、NR55R62、 CN及/或CO〇R55單-或多-取代;或C6-C10芳基、C7-Cu芳烷 5 基或CrC5雜芳基,每一者皆未經取代,或經CrC4烧基、鹵 素、NR55R61、COR55、CR55OR61OR62、N〇2、CN及/或 COOR62 單-或多-取代; R73、R74、R75與R76每一者皆獨立地為Η、CrC4烷基、 鹵素、〇R66、SR66、NR51R67、COR51、N02、CN,或 COOCrC^ 10 烧基; 或R73與R74、R74與R75,及/或R75與R76之一或多配對皆 ^83 R84〆、、 獨立地與R79R75, thus bonding with it - adjacent carbon atoms form benzene, cyclohexene, cyclohexadiene, cyclopentadiene, or cyclopentene, R51, R55, R6i, R62, R68 and R71 are each independently知15 20 200805362 benzyl; or CrC4 alkyl, c2-C4 alkenyl, c2-c4 alkynyl, [c2-c3 alkylene CHk-Rw, or [c2-c3 alkylene-NR82-]k-R81 , each unsubstituted, or mono- or poly-substituted by halogen; or NR51R67, 51r68, NR41R55, and/or NR55R61 is a five or six 5-membered heterocyclic ring, which further comprises an N or a ruthenium atom, It may be mono- or poly-substituted by methyl and/or ethyl; each of R53, R54, R57 and r58 is independently CrC12 alkyl, C2-C12 alkenyl, C2-C12 alkynyl, c7-C12# Alkyl, c3_c12 cycloalkyl, c3-c12 cycloalkenyl or c2-cn heterocycloalkyl, each unsubstituted, or halogen, 10 OR60, sr60, nr41r55, NR55COR61, NR55COOR60, NR55CONR63R64, NR55CN, COR55, CR55OR61OR62, N02, CN, COOR60, CONR63R64 and/or S02R63 mono- or poly-substituted; or R53 and R54, and/or R57 and R58 together (: 2-(:12 alkylene, 〇2-(: 12 alkenylene, c2_c12 cycloalkylene Or a c2-c12 cycloalkenylene pair, one to five non-contiguous carbon atoms may be substituted by an oxygen and/or sulfur atom, and/or with NR55, (:2-(:12 alkylene, (:2- (: 12 alkenylene, (: 2-(: 12-cycloalkylene, or c2-c12 cycloalkenylene substituted with the same or different groups, each unsubstituted) or halogen, OR60, SR60 , NR41R55, NR55COR6I, NR55COOR6〇, NR55CONR63R64, NR55CN, COR55, 20 CR55OR61OR62, N02, CN, COOR60, CONR63R64&/ or so2r63 single- or multi-substituted; each R60 or R*66, independent of any other ruler 60 or 66' is R41 or 65; r65 is cor41, coor41, CONR63H64, CN, so2nr63r64 or S02R63; 16 200805362 R72 'is independent of any other r72, each independently Ci-C6 alkyl, C2-C6 Alkenyl, C2-C6 alkynyl, C3-C6 cycloalkyl, C3-C6 cycloalkenyl, or C2_C5 heterocycloalkyl, each unsubstituted, or halogen, NR55R62, CN and/or CO〇 R55 mono- or poly-substituted; or C6-C10 aryl, C7-Cu aralkyl 5- or CrC5 heteroaryl, each unsubstituted, or via CrC4 alkyl, halogen, NR55R61, COR55, CR55OR61OR62, N〇2, CN and/or COOR62 mono- or poly-substituted; R73, R74, R75 and R76 are each independently Η, CrC4 alkyl, halogen, 〇R66, SR66, NR51R67, COR51, N02 , CN, or COOCrC^ 10 alkyl; or R73 and R74, R74 and R75, and/or one or more of R75 and R76 are ^83 R84〆, independently

86或 、結合,因此與 其上鍵結之二相鄰碳原子形成苯或部分或完全飽和卜元 環; R77、R78、R79與R8〇每一者皆獨立地為I·!、CVC4烧基、 鹵素、0R66或SR66, R73可與R77形成一3一4_、5_或6_元環, R74可與R%形成3-、4-、5-或6-元環,R?5可與R8G形成3_、心、 5_或6-元環,或r76可與‘形成3_、4_、5诚&元環;或^ 與〜、R74與r78、r75與r79,或r76與R8〇共同為胤51、〇或§ ; 汉^與化2每一者皆獨立地為甲基 '乙基、乙烯基,及/ 或烯丙基; 尺83、R84、R85與R86每一者皆獨立地為Η、Ci_C4院基、 17 200805362 鹵素、OR66、SR66、取5爪7、c〇R5、N〇2、CN,或 C〇〇Ci-C4 烷基; 可為相同或不同取代基之—或多個自由基,每一者皆 選自於*Ri、R3、r4、R5、R7、R8、r9、Ri。、86 or, bonded, thus forming a benzene or a partially or fully saturated Bu ring with two adjacent carbon atoms bonded thereto; R77, R78, R79 and R8 are each independently I·!, CVC4 alkyl, halogen, 0R66 or SR66, R73 can form a 3-4, 5 or 6-membered ring with R77, R74 can form a 3-, 4-, 5- or 6-membered ring with R%, and R?5 can form 3_ with R8G. , heart, 5_ or 6-membered ring, or r76 can be combined with 'form 3_, 4_, 5 Cheng & element ring; or ^ and ~, R74 and r78, r75 and r79, or r76 and R8〇 together for 胤51 , 〇 or § ; each of the two is independently methyl 'ethyl, vinyl, and / or allyl; each of the feet 83, R84, R85 and R86 is independently Η, Ci_C4 Institute, 17 200805362 Halogen, OR66, SR66, 5 paws 7, c〇R5, N〇2, CN, or C〇〇Ci-C4 alkyl; may be the same or different substituents - or multiple free Bases, each selected from *Ri, R3, r4, R5, R7, R8, r9, Ri. ,

Rll、R12 5 R13 R24 尺38 R49 ^63 10 Rsi 、Rl4 、Rl5 '16、 R17、 Rl8、 R19 、R20、 r21、 R22、 R23、 、R25 、R26 ' R27、 R28、 R29、 R30 、R31、 R32、 R34、 R35、 、R39 、R40 ' R41、 R42、 R43、 R44 、R45、 R46、 R47、 R48、 、R5O 、尺51 ' R53、 R55、 尺56、 R57 、R59、 尺60、 R61、 尺62、 、R65 、尺66 ^67 Λ 尺68、 尺69、 R72 、R73、 R74、 R75、 R76、 、R83、 尺84、 與R86組成之族群, 可與另 一者鍵結成對, 藉由直接鍵結或經由_〇_ 、-S-或-N(R82)·橋鍵,選擇性地形 成-化合物,其包含式(1)之二或三個相同或不同片段; k為1、2、3或4之整數;n為整數丨、2或3。 該紀錄雷射較佳具有波長370至450 nm。尤佳位於 UV-A範圍中,波長為37〇至 nm,尤其是約38〇腿,或 在可見光範圍邊緣390至43〇nm,更佳約405土5nm。 UV-A範圍為315至4〇〇 nm,可見光範圍為4〇〇至7〇〇 nm。陽離子Zl碘鹽之最大吸收波長至多為545 rnn,更佳為 350至520 nm,尤其是42〇至520 nm。315至700 nm之光譜為 20最佳’係於濃度2.10_4mol/l測量,於乙醇中,或二氣甲烷中, 若在乙醇中之溶解度不夠時,或N,N-二甲基甲醯胺中,若 於乙醇與二氯甲烷中之溶解度皆不夠時。 取代基,包括多個具有相同標記之取代基,一般係互 相獨立。較佳為式⑴化合物,其中η為1,或者,式⑴化合 18 200805362 物’其中η為2,且z,—係由二相同或不同之陽離子Z/組成, 其以直接鍵結或_〇_、-S-或氺(r82)_橋聯方式結合。 Μι為一陽離子,氧化態為+3,一經基或鹵素金屬陽離 子,其中該金屬氧化態為+4,或氧合金屬陽離子,其中金 5屬氧化態為+5,為至少第3族至15族之三價金屬(IIIA至VB 族),較佳為Al3+、As3+、Au3+、Bi3+、Ce3+、Co3+、Cr3+、Rll, R12 5 R13 R24 Ruler 38 R49 ^63 10 Rsi , Rl4 , Rl5 '16, R17, Rl8, R19, R20, r21, R22, R23, R25, R26 ' R27, R28, R29, R30, R31, R32 , R34, R35, R39, R40 ' R41, R42, R43, R44, R45, R46, R47, R48, R5O, Ruler 51 ' R53, R55, Ruler 56, R57, R59, Ruler 60, R61, Ruler 62 , R65, Ruler 66 ^ 67 Λ 68, Rule 69, R72, R73, R74, R75, R76, R83, Ruler 84, and R86, can be paired with the other by direct key A compound is selectively formed via a _〇_, -S- or -N(R82) bridge, which comprises two or three identical or different fragments of formula (1); k is 1, 2, 3 Or an integer of 4; n is an integer 丨, 2 or 3. The recorded laser preferably has a wavelength of 370 to 450 nm. It is particularly preferred to be in the UV-A range with a wavelength of 37 Å to nm, especially about 38 angstroms, or 390 to 43 〇 nm at the edge of the visible range, more preferably about 405 Å to 5 nm. The UV-A range is 315 to 4 〇〇 nm and the visible range is 4 〇〇 to 7 〇〇 nm. The maximum absorption wavelength of the cationic Zl iodide salt is at most 545 rnn, more preferably 350 to 520 nm, especially 42 to 520 nm. The spectrum of 315 to 700 nm is 20 optimal 'measured at a concentration of 2.10_4 mol/l, in ethanol, or in di-methane, if the solubility in ethanol is insufficient, or N,N-dimethylformamide In the case, if the solubility in ethanol and dichloromethane is insufficient. Substituents, including a plurality of substituents having the same label, are generally independent of one another. Preferred is a compound of the formula (1), wherein η is 1, or the compound of the formula (1) is 18 200805362, wherein η is 2, and z, is composed of two identical or different cations Z/, which are directly bonded or 〇 _, -S- or 氺 (r82)_ bridge mode combination. Μι is a cation, the oxidation state is +3, a radical or a halogen metal cation, wherein the metal oxidation state is +4, or an oxygenated metal cation, wherein the gold 5 is in an oxidation state of +5, and is at least a 3rd to 15th a trivalent metal of the family (IIIA to VB), preferably Al3+, As3+, Au3+, Bi3+, Ce3+, Co3+, Cr3+,

Dy3+、Er3+、Eu3+、Fe3+、Gd3+、Ho3+、Ir3+、La3+、Lu3+、 Mn3+、Mo3+、Nb3+、Nd3+、Pm3+、Pr3+、Rh3+、RU3+、Sb3+、 Sc3+、Sm3+、Ta3+、Tb3+,Ti3+,[TiCl]3+,[Ti〇H]3+,Tm3+,V3+, 10 [V〇]3+,W3+,Y3' Yb,[ZrC1]3+或[Zr0H严,最佳為以十或Dy3+, Er3+, Eu3+, Fe3+, Gd3+, Ho3+, Ir3+, La3+, Lu3+, Mn3+, Mo3+, Nb3+, Nd3+, Pm3+, Pr3+, Rh3+, RU3+, Sb3+, Sc3+, Sm3+, Ta3+, Tb3+, Ti3+, [TiCl]3 +,[Ti〇H]3+, Tm3+, V3+, 10 [V〇]3+, W3+, Y3' Yb, [ZrC1]3+ or [Zr0H strict, best in ten or

Cr3+。 烷基、烯基或炔基可為直鏈或分支。烯基為單_或多_ 不飽和烧基,其中含有分離或共輛之二或多個雙鍵。炔基 為具有一或多個雙不飽和之烧基或稀基,其中該三鍵可分 15 離或與另一三鍵或雙鍵共輛。環烷基或環浠基分別為單環 或多環院基或烯基。 C〗-Ci2烧基可為,例如曱基、乙基、n_丙基、異丙基、 η-丁基、第二-丁基、異丁基、第三-丁基、2-曱基-丁基、n_ 戊基、2-戊基、3-戊基、2,2-二甲基丙基、己基、庚基、 2〇 n_辛基、1,1,3,3-四甲基丁基、2-乙基己基、壬基、癸基、 十一基或十二基。 因此’ C^-C^2環院基可為例如’環丙基、環丙基_甲基、 環丁基、環戊基、環己基、環己基-曱基、三曱基環己基、 側柏基(thujyl)、原冰片基、冰片基、原ΐ|烷基(n〇rcaryl)、 19 200805362 菩烧基(caryl)、薄荷基、原松油基(n〇rpinyl)、松油騎—^、 1- 金剛烷基或2-金剛烷基。 C2-CW基為’例如’乙烯基、烯丙基、2_丙埽基、 2- 丁稀-1-基' 3-丁烯小基、u_丁二烯_2_基、2_戊 、 3- 戊烯-2-基、2-曱基小丁烯各基、2_曱基_3_丁烯基^_ 甲基-2-丁烯小基、ls4•戊二料基,或己浠基、辛職、 壬稀基、癸烯基或十二烯基之任_異構物。 10 15 20 C3_Cl2環烯基為,例如,環丁烯-1-基、2_環戊烯小 基、2-環己烯]•基、3·環己稀]•基、2,4環己二私基、 ¥薄荷"·基、4叫側柏烯_1G_基、2_原冰片烯·丄·基、 2,5_原冰片二稀+基、口·二甲基从原楷烧二稀 (露讓dien)·3-基或!^基(camphenyi)。 c2-c12炔基為,例如丙块_3_基、i•丁炔斗基、卜 戊龄基、 :=、1-己块-6-基、順_3_甲基·2切小…^ ^ , 丞I3·己一炔j基、b辛炔_8_基、卜壬 炔冬基、1_癸块-10-基,或1-十二块_12_基。 c7-c -辛二甲基节基、苯基_ 丁基、…苯基_ 十二基,或甲基四甲基_丁 二美片=1咖基_代時,峨基之編段 ”方基m皆可經取代,後者取代較佳。 基。*基為’例如’苯基、蔡基或雙苯基,較佳為苯 20 200805362 鹵素為氯、漠、氟或埃,較佳為氯或演於芳基或雜芳 基上,氟於烧基上。 CVC9雜芳基為不飽和或芳基自由基,具有如+2個共輪 π-電子,例如2-嗟嗯基、2-吱喃基、丨_吡唑基、2^比咬基、 5 2_噻唑基、2_噁唑基、2_咪唑基、異噻唑基、三唑基、四唑 基’或任一其他環糸統’係由η塞吩、ϋ夫喃、嗟σ坐、嚼唾、 咪唑、異噻唑、噻二唑、三唑、吡啶、吡嗪、嘧啶、噠嗪 與苯環組成,以及未經取代,或經1至6個取代基取代,例 如,甲基、乙基、乙烯基,及/或曱烯基取代基。 10 此外,芳基與芳烷基亦可為鍵結至金屬之芳香基團,Cr3+. The alkyl, alkenyl or alkynyl group can be straight or branched. The alkenyl group is a mono- or poly-unsaturated alkyl group containing two or more double bonds separated or in common. An alkynyl group is an alkyl or a dilute group having one or more diunsaturated groups wherein the triple bond can be separated or shared with another triple bond or double bond. The cycloalkyl or cyclodecyl group is a monocyclic or polycyclic pendant or alkenyl group, respectively. C--Ci2 alkyl may be, for example, anthracenyl, ethyl, n-propyl, isopropyl, η-butyl, second-butyl, isobutyl, tert-butyl, 2-fluorenyl -butyl, n-pentyl, 2-pentyl, 3-pentyl, 2,2-dimethylpropyl, hexyl, heptyl, 2〇n-octyl, 1,1,3,3-tetra Butyl, 2-ethylhexyl, anthracenyl, fluorenyl, undecyl or dodecyl. Thus, the 'C^-C^2 ring-based group can be, for example, 'cyclopropyl, cyclopropyl-methyl, cyclobutyl, cyclopentyl, cyclohexyl, cyclohexyl-fluorenyl, trimethylcyclohexyl, side Thujyl, borneol, borneol, orthoquinone | n〇rcaryl, 19 200805362 cararyl, menthyl, n〇rpinyl, pine oil riding — ^, 1-adamantyl or 2-adamantyl. The C2-CW group is 'for example' vinyl, allyl, 2-propenyl, 2-butan-1-yl' 3-butene small group, u-butadiene_2-yl, 2-pentyl , 3-penten-2-yl, 2-indenyl-butenyl, 2-hydrazino-3-butenyl-methyl-2-butene, ls4•pentane, or Any of the isomers of hexyl, octyl, sulfhydryl, decenyl or dodecenyl. 10 15 20 C3_Cl2 cycloalkenyl is, for example, cyclobuten-1-yl, 2-cyclopentene small group, 2-cyclohexene] group, 3·cyclohexylene] group, 2,4 ring Two private base, ¥ mint " · base, 4 called cedarene _1G_ base, 2 _ original borneol 丄 · base, 2, 5 _ original borneol dilute + base, mouth · dimethyl from the original 楷Burn the second thin (deep let dien) · 3- base or! ^Base (camphenyi). The c2-c12 alkynyl group is, for example, a c-block _3_ group, an i-butynyl group, a b-butyl group, a :=, a 1-hexyl-6-yl group, a cis_3_methyl·2 dice... ^ ^ , 丞I3·hexyne alkyl group, b octyne _8_ group, azuldinyl winter group, 1_癸 block-10-yl group, or 1-tine block _12_ group. C7-c-octyl dimethylation group, phenyl-butyl group, phenyl group _ twelve group, or methyltetramethyl _ butyl bismuth =1 咖 基 代 代 代 代 代 代The square group m may be substituted, and the latter is preferably substituted. The base is 'for example, 'phenyl, zeoliyl or bisphenyl, preferably benzene 20 200805362 halogen is chlorine, desert, fluorine or angstrom, preferably Chlorine or on an aryl or heteroaryl group, fluorine on a burnt group. CVC9 heteroaryl is an unsaturated or aryl radical having, for example, +2 co-rotating π-electrons, such as 2-mercapto, 2 - mercapto, 丨-pyrazolyl, 2^ butyl, 5.2-thiazolyl, 2-oxazolyl, 2-imidazolyl, isothiazolyl, triazolyl, tetrazolyl' or any other Cyclosporin ' consists of η 塞 phen, ϋ 喃 嗟, 嗟 坐 sit, chew saliva, imidazole, isothiazole, thiadiazole, triazole, pyridine, pyrazine, pyrimidine, pyridazine and benzene ring, and Substituted, or substituted with 1 to 6 substituents, for example, methyl, ethyl, vinyl, and/or nonenyl substituents. 10 In addition, aryl and aralkyl groups may also be bonded to the aroma of the metal. Group,

Fe2+ 例如為過渡金屬之茂金屬形式,更佳為 <> 、Fe2+ is, for example, a metallocene form of a transition metal, more preferably <>

Fe2+ pe2+ Fe + 其中 R87為 CH2〇H、CH2OR41 或 COOR41。 ^/^雜環烷基為不飽和或部分不飽和環系統自由 15 基’如環氧基、氧雜環丁烧(oxetan)、氮丙^(aziridine);四 唑基(tetrazolyl)、吡咯烷基、旅啶基、哌嗪基、咪唑琳基、 °比0坐燒基、吼唑琳基、嗎琳基、喹淋環基;或某些其他單· 或多-氫化之(^-0:12雜芳基。 t至12-元環為,例如,環戊基、環己基、環庚基與環 20辛基’較佳為環戊基,尤佳為環己基。 21 200805362Fe2+ pe2+ Fe + wherein R87 is CH2〇H, CH2OR41 or COOR41. ^/^ Heterocycloalkyl is an unsaturated or partially unsaturated ring system free of 15 groups such as epoxy, oxetan, aziridine; tetrazolyl, pyrrolidine Base, benzylidene, piperazinyl, imidazolinyl, ° ratio of 0, oxazolidinyl, morphinyl, quinolidine; or some other mono- or poly-hydrogenated (^-0 : 12heteroaryl. The t to 12-membered ring is, for example, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group and a cyclo 20 octyl group, preferably a cyclopentyl group, and more preferably a cyclohexyl group. 21 200805362

/C:: .0-- 0 <ι N…及/或 N—較佳係獨立地為/C:: .0-- 0 <ι N... and/or N-better is independently

。G!與G2最佳為相等。較. G! is best equal to G2. More

G3^?+ R4T<\ X VN R4T<f^f 佳為,I代表Ql3 、 b或 <,其中 CR^R54較佳為CrC6亞烷基,或CrC6環亞烷基,更佳為卜 5 環亞己基,尤其是2-亞丁基一即,其中R53與R54共同=1,5_ 亞戊基,或R53=甲基/R54=乙基)。Q8較佳為S。 在R2與R6上具有雙鍵之醌(quinoid)結構,當然為式⑴ 化合物僅有之内消旋形式,其為光譜資料上顯示之最類似 結構。此外,112或116上亦可吸引一具有單鍵之苯基偶氮基, 10 以及R2或R6上之一負電荷,其可進一步經由互變化而質子 化。然而,經由内消旋化使電子非區域化,為本發明之一 必要特徵,優點為可經由與金屬之額外鍵結穩定陰離子。 因此,R2及/或R6較佳為0、S、N-CN,或N-S02CF3,尤佳 為Ο。 15 不論是與較佳之R2及/或116組合,或是獨立,R3及/或R7 較佳為H、自素、N〇2、CN、cor55、coor6〇、so3r60、 NCO或SCN ’更佳為η。獨立於相反離子(c〇unter丨⑽)之結 構’這些較佳取代基,令人意外地,會產生增進之光與多 次讀取穩定性’當使用於光學紀錄媒體中時,不論是作為 22 200805362 主要紀錄染料,或是其他紀錄染料之添加物。 尤佳為,當與較佳之R2、R3、R6,及/或反7組合,或獨 立時,較佳在雜環中包含〇1或〇2 ’ R42與R56之至少一者,尤 其是 R42,為 CF3、N02、CN、COR55、COOR6〇、CR55〇R61〇R62、 5 CONR63R64、S02R55、SO3R6G、S02NR63R64,最佳為cf3、 N〇2、CN、cor55、coor6〇、so2r55及/或 s〇3r60。雖然 r4, 與R56二者為此類較佳基團,較佳僅有一者為此類較佳基 團,而另一者為氫或Ci-C:4烷基,或是1^2與尺56共同為亞丁 二烯基(butadienylen),不論是未經取代或經取代,較佳為 10 未經取代,或經CF3、N02、CN、COR55、C00R6G,及/或 S03R6G取代。 較佳為,不論是與較佳之R2、Rs、R6、R7、R42,及/ 或R56組合,或是獨立,尤其是在包含^之雜環中,心8為11 或F,或與R44結合為亞丁二烯基,不論是未經取代或經取 15代,較佳為未經取代,或經一或多個。_〇4烷基、函素、 OR60、SR6G、NR55R61、CF3、n〇2、CN、c〇R55、C〇〇R60、 S02R55,及/或s〇3R6G取代。 較佳為,每一r6〇係獨立地為R6〇烧基或H,且每一‘ _立地為氫,或CrC6烧基、c2_c6烯基、c2_c6块基、c3_c6 20 %烷基c3-c6%烯基、c2-c5雜環烧基,或c7_Cii芳烧基, 每一者皆未經取代,或經ORdR72、nr55r62,及/或COOR55 單·或多-取代。 數字η較佳為1或2。 式⑴中所含之陽離子性與陰離子性次結構係互相獨 23 200805362 立。然而,較佳為結合較佳之陽離子與較佳之陰離子。 更佳為,可結合上述較佳物之任一者或全部,係提供 式(I)化合物,其中R4為氫、羥基、CrC4烷氧基,或Q-C4 烷基;R42為硝基或氰基,較佳為硝基;及/或R55或R41為甲 5 基、乙基、η-丙基、異丙基、η-丁基、2-丁基、異丁基、第 三-丁基、3-戊基、η-戊基、第三-戊基、新戊基、2,2-二甲 基-丁-4-基、環丙基、環丙基曱基、環丁基、環丁基甲基、 環戊基、環戊基甲基,或環己基,每一者皆未經取代,或 經氟單-或多-取代。R53與Rm較佳二者皆為甲基、二者皆為 10 乙基,或R53為乙基與R54為曱基,或二者結合為1,5-戊烯 基。烷基、烯基、炔基、環烷基與雜環烷基,一般較佳分 別為crc4烷基、c2-c4烯基、c2-c4炔基與環氧基烷基。所 有這些較佳物皆可應用,並具有特定優點,較佳為R2、r3、 c:: R6、R7、R42、R43、R56、R60 ’ 及 / 或 R66 ’ 以及 N 及/或 c:: 15 N—、Q8與n也是。 當R55、R61與R62與另一者配對鍵結時,以直接鍵結或 -0-、-S-或-NR82-橋聯方式’較佳為鍵結形成五或六元壞。 本發明之另一觀點為式(I)化合物,其中該二陽離子或 陰離子之二配位基係橋聯,例如在式(I)取代基間以直接鍵 20 結或_0-、-S-或-NR82-橋聯方式,該橋聯之配位基可能與相 同金屬陽離子,或選擇性地與不同金屬陽離子錯合,後者 形成之募合物,當然,亦可視為本發明之一目的。以陽離 24 200805362 子或陰離子上之0或N原子橋聯,不論是在發光團或取代基 上,皆具特別優點。 包含2或3個不同片段之式(I)化合物,以鍵結及/或橋聯 結合,可為對稱,較佳為不對稱,可以已知方法之類似方 5 法製備。 在下列範例中(其並非用於限制),X可為,如-CH2-、 -CH2-CH2-、-CH2-0-CH2·,或-CH2-NH-CH2-:G3^?+ R4T<\ X VN R4T<f^f preferably, I represents Ql3, b or <, wherein CR^R54 is preferably CrC6 alkylene, or CrC6 cycloalkylene, more preferably Cyclohexylene, especially 2-butylene, wherein R53 and R54 are together = 1,5-pentylene, or R53 = methyl / R54 = ethyl). Q8 is preferably S. The quinoid structure having a double bond on R2 and R6 is, of course, the only racemic form of the compound of formula (1), which is the most similar structure shown on the spectral data. Further, 112 or 116 may also attract a phenyl azo group having a single bond, 10 and a negative charge on R2 or R6, which may be further protonated by mutual change. However, the non-regionalization of electrons via meso-isolation is an essential feature of the invention, with the advantage that the anions can be stabilized via additional bonding to the metal. Therefore, R2 and/or R6 are preferably 0, S, N-CN, or N-S02CF3, and particularly preferably Ο. 15 Whether combined with the preferred R2 and/or 116, or independent, R3 and/or R7 are preferably H, self, N〇2, CN, cor55, coor6〇, so3r60, NCO or SCN 'better η. Independent of the structure of the opposite ion (c〇unter丨(10)), these preferred substituents, surprisingly, produce enhanced light and multiple read stability' when used in optical recording media, whether 22 200805362 Mainly recorded dyes, or other additives for recording dyes. More preferably, when combined with preferred R2, R3, R6, and/or trans7, or independently, it is preferred to include at least one of 〇1 or 〇2' R42 and R56 in the heterocycle, especially R42, For CF3, N02, CN, COR55, COOR6〇, CR55〇R61〇R62, 5 CONR63R64, S02R55, SO3R6G, S02NR63R64, preferably cf3, N〇2, CN, cor55, coor6〇, so2r55 and/or s〇3r60 . Although both r4 and R56 are such preferred groups, preferably only one is such a preferred group, and the other is hydrogen or Ci-C: 4 alkyl, or 1^2 and ruler. 56 is a butadienylen, whether unsubstituted or substituted, preferably 10 unsubstituted, or substituted with CF3, N02, CN, COR55, C00R6G, and/or S03R6G. Preferably, whether in combination with the preferred R2, Rs, R6, R7, R42, and/or R56, or independently, especially in the heterocycle containing ^, the core 8 is 11 or F, or is bonded to R44. It is a butadienyl group, whether unsubstituted or taken for 15 generations, preferably unsubstituted, or one or more. _〇4 alkyl, cyclin, OR60, SR6G, NR55R61, CF3, n〇2, CN, c〇R55, C〇〇R60, S02R55, and/or s〇3R6G are substituted. Preferably, each r6 oxime is independently R6 decyl or H, and each ' _ is hydrogen, or CrC6 alkyl, c2_c6 alkenyl, c2_c6, c3_c6 20% alkyl c3-c6% Alkenyl, c2-c5 heterocycloalkyl, or c7-Cii aryl, each unsubstituted or mono- or poly-substituted by ORdR72, nr55r62, and/or COOR55. The number η is preferably 1 or 2. The cationic and anionic secondary structures contained in formula (1) are independent of each other. However, it is preferred to combine a preferred cation with a preferred anion. More preferably, a compound of formula (I) wherein R4 is hydrogen, hydroxy, CrC4 alkoxy, or Q-C4 alkyl; R42 is nitro or cyanide may be combined with any or all of the above preferences. a group, preferably a nitro group; and/or R55 or R41 is a methyl group, an ethyl group, an η-propyl group, an isopropyl group, an η-butyl group, a 2-butyl group, an isobutyl group, a third-butyl group. , 3-pentyl, η-pentyl, tri-pentyl, neopentyl, 2,2-dimethyl-butan-4-yl, cyclopropyl, cyclopropylindenyl, cyclobutyl, ring Butylmethyl, cyclopentyl, cyclopentylmethyl, or cyclohexyl, each unsubstituted or mono- or poly-substituted by fluorine. Preferably, both R53 and Rm are methyl, both of which are 10 ethyl, or R53 is ethyl and R54 is a fluorenyl group, or a combination of the two is a 1,5-pentenyl group. The alkyl group, the alkenyl group, the alkynyl group, the cycloalkyl group and the heterocycloalkyl group are generally preferably a crc4 alkyl group, a c2-c4 alkenyl group, a c2-c4 alkynyl group and an epoxyalkyl group. All of these preferred applications are applicable and have particular advantages, preferably R2, r3, c:: R6, R7, R42, R43, R56, R60' and / or R66' and N and / or c:: 15 N—, Q8 and n are also. When R55, R61 and R62 are paired with the other, the bonding is preferably a direct bond or a -0-, -S- or -NR82-bridged mode to form a five or six-member defect. Another aspect of the invention is a compound of formula (I), wherein the dication of the dication or anion is bridged, for example, by a direct bond 20 or a _0-, -S- substituent between the substituents of formula (I) Or -NR82-bridged mode, the bridged ligand may be mismatched with the same metal cation, or selectively with a different metal cation, the latter forming a composition, of course, may also be considered as an object of the present invention. It is a special advantage whether it is a luminescent group or a substituent on the bridge of 200805362 or anion on the 0 or N atom. The compound of formula (I) comprising 2 or 3 different fragments, which may be symmetrical, preferably asymmetric, by bonding and/or bridging, may be prepared by a similar method of the known method. In the following examples (which are not intended to be limiting), X may be, for example, -CH2-, -CH2-CH2-, -CH2-0-CH2, or -CH2-NH-CH2-:

本發明之紀錄媒體,除了包含式(I)化合物者,可額外 10 包含鹽類,如氯化銨、五癸基氣化鈉、碘化鈉、硫酸氳鈉、 曱基硫酸鈉、甲基磺酸鈉、甲苯磺酸鈉、醋酸鈉、六氟磷 酸鈉、醋酸鈷(II),或氯化鈷(II),其離子產生自,如,所 使用之成分。 式(I)之有興趣陰離子為具下式者(皆有六個鍵結連結 15 於金屬上,具有類似之長度,依據X-光資料): 25 200805362The recording medium of the present invention may contain, in addition to the compound of the formula (I), an additional salt such as ammonium chloride, sodium decyl carbonate, sodium iodide, sodium sulphate, sodium decyl sulfate or methyl sulfonate. Sodium, sodium toluene sulfonate, sodium acetate, sodium hexafluorophosphate, cobalt (II) acetate, or cobalt (II) chloride, the ions of which are derived, for example, from the ingredients used. The anion of formula (I) is of the following formula (all have six bond junctions 15 on the metal, with similar length, according to X-ray data): 25 200805362

26 20080536226 200805362

27 20080536227 200805362

55

•有趣的疋,式(I)化合物,其中心至尺4之一或多者,不 同於相對應之尺5至尺8,及/或其中G1不同於仏,可簡易地由 ^個混合合成步驟製備,二不同之配位基可同時被金屬 /、有不對稱配位基之式⑴化合物,可以一般方法分離 出,如層析法,較佳使用於具有二相同配位基之式(I)化合 物之預混合物中。 0 式⑴有興趣之_子為具下式者(U: 28 200805362• Interestingly, a compound of formula (I), one or more of its center to the ruler 4, different from the corresponding ruler 5 to 8 and/or wherein G1 is different from 仏, can be easily synthesized by mixing In the preparation of the steps, two different ligands can be simultaneously separated by a metal/a compound having the asymmetric formula (1), and can be isolated by a general method, such as chromatography, preferably using a formula having two identical ligands ( I) In a premix of the compound. 0 (1) interested in the _ sub is the following (U: 28 200805362

h3c-nH3c-n

N-N (366 nm), CH,N-N (366 nm), CH,

(418 nm),(418 nm),

h5c2 (438 nm),H5c2 (438 nm),

HH

(440 nm),(440 nm),

〇^: OH N-N CHQ〇^: OH N-N CHQ

HqC H5C2 CHq 〇-CH0 (449 nm)5 (462 nm), =\ CH,HqC H5C2 CHq 〇-CH0 (449 nm) 5 (462 nm), =\ CH,

HX-NHX-N

◦九(492nm), O-CH (466 nm),◦九(492nm), O-CH (466 nm),

(506 nm),(506 nm),

(499 nm)9 9h3 -N \>-N. 'N N CH. NH0 (507 nm), 9h3 -N \>-N. 'N N CH0(499 nm)9 9h3 -N \>-N. 'N N CH. NH0 (507 nm), 9h3 -N \>-N. 'N N CH0

HX-N (516 nm), \V^n-C4H9 c2h5 (548 nm), 29 200805362 以及HX-N (516 nm), \V^n-C4H9 c2h5 (548 nm), 29 200805362 and

Η3ς +Η3ς +

h3c (542 nm) ο 陰離子與陽離子二者皆可以類似於一般已知方法製 備,如揭示於 CH-390250、CH-560270、CH-577998、 CH-608027、CH-1098125、DE-1083000、DE-2262780、 EP-0029003 、 GB-1111014 、 US-3,014,041 、 5 US-2004/018723卜 WO95/01772與WO04/088649者,或依 據下列範例類似者。亦適用於式⑴之鹽類,某些例子並 非用於限制本發明,H3c (542 nm) o Both anions and cations can be prepared analogously to generally known methods, as disclosed in CH-390250, CH-560270, CH-577998, CH-608027, CH-1098125, DE-1083000, DE- 2262780, EP-0029003, GB-1111014, US-3,014,041, 5 US-2004/018723, WO95/01772 and WO04/088649, or similar to the following examples. Also applicable to the salts of formula (1), some examples are not intended to limit the invention,

30 20080536230 200805362

c 3 Fc 3 F

ss

〇 -C4H〇 -C4H

〇 cl〇 cl

F 〇F 〇

c 3 Hc 3 H

CHCH

〇 31 200805362〇 31 200805362

32 20080536232 200805362

33 20080536233 200805362

HH

5 H2 f-C-N H 2 c hqc-n5 H2 f-C-N H 2 c hqc-n

h3ctH3ct

FXO.S.FXO.S.

QH3 -N 'N NbhLQH3 -N 'N NbhL

FF

F H,F H,

SS

N N=< >-〇N N=<>-〇

X%N 〇=(^{X%N 〇=(^{

BrBr

S0oCFoS0oCFo

BrBr

SS

-N 以及 34 200805362-N and 34 200805362

某些式(i)化合物為新穎的。因此,本發明亦相關於一 種式(I)化合物,其中該陽離子冗!包含下式之基團:Certain compounds of formula (i) are novel. Accordingly, the invention is also related to a compound of formula (I) wherein the cation is redundant and comprises a group of the formula:

35 20080536235 200805362

本發明亦相關於使用式(I)化合物,於以波長低於6〇〇 nm ’較佳350至500 nm,尤其是350至450 nm之雷射進行光 5 學紀錄中之用途,及相關於一種光學紀錄或資訊播放之方 法’其中波長低於600 nm,較佳350至500 nm,尤其是35〇 至450 nm之雷射光,係聚焦於包含式⑴化合物之之記錄媒 體之記錄執道上。 該紀錄層較佳包含式(I)化合物,或此化合物之混合 10 物,作為主成分,例如至少30%重,較佳至少60%重,尤其 疋至少、80 重。亦可包含其他一般组成’例如其他發色團 (chromophores)(如描述於WO 01/75873者,或其他具有最大 吸收波長300至1000 nm者)、穩定劑、、三重_或冷光泮 滅劑(luminescence-quenchers)、熔點降低劑、分解加速劑, 15或任何其他已描述用於光學紀錄媒體之添加物。較佳為, 添加穩定劑或冷光淬滅劑,若希望的話。 當紀錄層包含更多發色團時,此發色團之量較佳應為 小量,使得其於整個固體層之最短波長側(flank)之轉換點 之吸收,為在相同波長下,該整個固體層中純式(1)化合物 36 200805362 吸收之部分,較佳最大值為1/3,更佳最大值為i/5,尤佳最 大值為1/10。吸收最大值較佳位於高於425 nm處,尤佳位 於高於500 nm。 穩疋劑、Or、三重-或冷光淬滅劑為,例如,含或 5 S_之烯醇鹽、酚鹽、雙酚鹽、硫醇鹽,或雙硫醇鹽,或偶The invention is also related to the use of a compound of formula (I) for light recording at a wavelength of less than 6 〇〇 nm ', preferably 350 to 500 nm, especially 350 to 450 nm, and related A method of optical recording or information playback wherein laser light having a wavelength of less than 600 nm, preferably 350 to 500 nm, especially 35 to 450 nm, is focused on the recording medium of a recording medium containing the compound of the formula (1). The recording layer preferably comprises a compound of the formula (I), or a mixture of the compounds, as a main component, for example at least 30% by weight, preferably at least 60% by weight, especially at least 80% by weight. Other general compositions can also be included, such as other chromophores (as described in WO 01/75873, or others having a maximum absorption wavelength of 300 to 1000 nm), stabilizers, triple or cold light quenchers ( Luminescence-quenchers), melting point depressants, decomposition accelerators, 15 or any other additive already described for optical recording media. Preferably, a stabilizer or a cold light quencher is added, if desired. When the recording layer contains more chromophores, the amount of the chromophore should preferably be a small amount such that its absorption at the transition point of the shortest wavelength side of the entire solid layer is at the same wavelength. The portion of the solid (1) compound 36 200805362 absorbed in the entire solid layer preferably has a maximum of 1/3, more preferably a maximum of i/5, and particularly preferably a maximum of 1/10. The absorption maximum is preferably above 425 nm, and more preferably above 500 nm. The stabilizer, Or, triple- or cold-light quencher is, for example, an enolate, a phenate, a bisphenolate, a thiolate or a dithiolate containing or 5 S_, or

氮次甲亞胺,或甲犧(formazan)染料之金屬錯合物,如雙(4-二甲基胺基二硫基苄基)鎳[CAS N。38465-55-3]、⑧Irgalan Bordeaux EL·、®Cibafast N或類似之化合物,受阻酚類 (hindered phenols)與其衍生物,如®Cibafast AO、〇-羥基苯 10 基·三唑,或-三嗪,或其他UV吸收劑,如®Cibafast W,或 ⑧Cibafast P,或受阻胺類(TEMPO或HALS,亦稱之為氮氧 化物或NOR-HALS),以及二亞胺鹽、Paraquat™或 Orthoquat™鹽類,如⑧Kayasorb IRG 022、®Kayasorb IRG 040,選擇性地,亦可為自由基離子鹽類,如N,N,N,,Nt_四 15 二丁基胺基苯基)-p-亞苯基胺-六氟鱗酸銨、六氟銻酸鹽或 過氯酸鹽。後者可得自Organica (Wolfen/DE);⑧Kayasorb 品牌可得自Nippon Kayaku Co· Ltd·,以及㊣Irgalan與 ^Cibafast品牌可得自 Ciba Specialty Chemicals Inc。 許多此類結構為已知,某些與光學紀錄媒體相關, 20 如 US-5 219 707、JP-A-06/199045、JP-A-07/76169、 JP-A-07/262604或JP-A-2000/272241 所揭示者。他們可為, 如,上述揭示之金屬錯合物陰離子與所希望陽離子形成之 鹽類,如上述揭示之陽離子,或是如圖所示之金屬錯合物, 37 200805362 如具有下式之化合物A metal complex of a nitrogen sub-imine, or a formazan dye, such as bis(4-dimethylaminodithiobenzyl)nickel [CAS N. 38465-55-3], 8Irgalan Bordeaux EL·,® Cibafast N or similar compounds, hindered phenols and their derivatives, such as ® Cibafast AO, 〇-hydroxybenzene 10 yl triazole, or -triazine , or other UV absorbers such as ® Cibafast W, or 8 Cibafast P, or hindered amines (TEMPO or HALS, also known as nitrogen oxides or NOR-HALS), and diimine salts, ParaquatTM or OrthoquatTM salts Classes such as 8Kayasorb IRG 022, ® Kayasorb IRG 040, alternatively, may also be free radical ionic salts such as N, N, N, Nt_tetradecyldibutylaminophenyl)-p-phenylene Amine-ammonium hexafluorophosphate, hexafluoroantimonate or perchlorate. The latter is available from Organica (Wolfen/DE); the 8Kayasorb brand is available from Nippon Kayaku Co. Ltd., and the positive Irgalan and ^Cibafast brands are available from Ciba Specialty Chemicals Inc. Many such structures are known and some are associated with optical recording media, such as US-5 219 707, JP-A-06/199045, JP-A-07/76169, JP-A-07/262604 or JP- Rev. A-2000/272241. They may, for example, be a salt of a metal complex anion formed as described above and a desired cation, such as the cation disclosed above, or a metal complex as shown, 37 200805362, a compound having the formula

ΝΪ---ΝΗ c4h9ΝΪ---ΝΗ c4h9

Ο 此技術領域者應由其他光學資訊媒體瞭解,或輕易辨 識出,特別適用於某目的之添加物濃度。是用之添加物濃 5 度為,例如,0.001至1000%重,較佳1至50%重,以式(I)紀 錄媒體之重量為基準。 本發明之光學紀錄材料具有絕佳之固體非晶形紀錄層 光譜特性。此類化合物之固體堆積傾向出奇得低。不希望 有結晶出現,幸運的是,並未形成結晶或僅形成可忽略之 10 量。各層於寫入與讀取波長範圍之反射度適用於由低至 高,以及由高至低系統。 由於各層之良好特性,因此可獲得具有高感度、高重 複性與空間精確標記邊界之快速光學紀錄-以及非常短 (2T)之標記-,錯合物折射率與反射率會大幅改變,提供了 15 高度對比。標記長度與間隔距離(“抖動(jitter)”)之差異相當 小,此可允許獲得高儲存密度,使用具有窄執道空間(“執 距”)之相對薄之紀錄通道。染料層品質相當好,產生高訊 號-雜訊比(CNR,PRSNR),及令人驚訝的低錯誤率(bER或 SbER),在播放時。 38 200805362 由於良好之溶解度,包括於質子性溶劑中,溶液可於 高濃度下使用,而不會有沈殿問題,例如在儲存時,使得 旋轉塗佈時會遇到的問題大幅減少。此特別適用於含有分 支€3-08烷基之化合物。 5 紀錄與播放可於同一波長下進行,因此較佳需要一簡 單之光學系統,具有單一雷射光源,較佳自350至500 nm, 更佳自370至450 nm。尤佳為UV範圍,自370至390 nm, 尤其是約380 nm,或在可見光範圍邊緣,自390至430 nm, 更佳約405士5 nm。在壓縮區域内,具有高孔徑光學系統之 10 監或紫光雷射二極體(如Nichia GaN 405 nm),可達到在120 mm碟片上,標記相當地小,且軌道窄至約2〇至25 Gb每紀 錄層。於380 nm,可使用銦添補UV-VCSELs (垂直腔面發 光雷射 ’ Yertical-£_avity Surface-旦mitting leaser),其中雷射 光源已以原型存在[jung Han以α/·,請見MRS Internet J. 15 Nitride Semicond· Res· 5S1,W6.2 (2000)]。 因此,本發明亦相關於一種紀錄或播放資料之方法, 其中本發明光學紀錄媒體上之資料,係於波長低於6〇〇 nm ’較佳自350至5〇〇腿下被紀錄或播放。 該紀錄媒體係以已知之紀錄媒體為基礎,且為,例如, 20上述之類似者。可由,如透明基板、含有至少一式(I)化合 物之紀錄層、一反射層,以及_覆蓋層組成,該寫入與讀 取會受到基板影響。 適當之基板為,如,玻璃、礦物、陶瓷,以及熱固性 與熱塑性塑膠。較佳之支撐物為破璃,以及同-或共聚合塑 39 200805362 膠。適虽之塑膠為’如,熱塑性聚碳酸酯、聚醯胺、聚酯、 聚丙稀酯,以及聚甲基㈣酯、聚胺基甲酸酉旨、聚烯烴、 聚氣化乙烯、聚氟化亞乙烯、聚亞醯胺、熱固性聚酿,以 及㈣樹脂。特佳為聚碳酸酉旨基板,其可由,如,射出塑 5型方式衣備1¾基板可為純形式,或可包含一般添加物, 如預6又之UV吸收劑或染料,如Jp_A_〇4/167239中所述者, 作為紀錄層之光穩定劑。在後者情況下,在寫入之波長範 圍中(雷射之發光波長),加人支撐基板之染料不具有或僅具 有非常低之吸收,較佳至多約2 G %之雷射光聚焦於紀錄層。 10 该基板較佳為透明,至少在350至500 nm範圍中,因此 可允許,至少80%之入射光,在寫入或讀取波長下。該基 板較佳為10 μηι至2 mm後,更佳為1〇0至12〇〇 μιιυ^,尤其 是600至1100 μηι厚,較佳具有螺旋引導溝槽(執道)於塗覆 層,溝槽深度為10至20〇nm,較佳2〇至9〇11111,溝槽寬度為 15 100至400 nm ’較佳150至250 nm,二轉彎間之空間為2〇〇 至600 nm,較佳300至450 nm。不同橫截面之溝槽為已知, 例如,二角形、梯型或V-形。類似於已知之CD-R與dvd_r 媒體,該引導溝槽可額外地進行小週期或類週期之側偏斜 (搖无)’使付^轉速度與讀取頭(Pidup)絕對定位之同步化 20為可能。此外,或除了偏斜之外,相同之功能可藉由在鄰 近溝槽間(pre-pits)標記而進行。具有此種空間分佈,較可 能符合HDDVD-R™規範。 該紀錄媒體可藉由如旋轉塗佈一溶液而施加,目的為 製造一盡量非晶形之層,該層之厚度較佳為〇至4〇 nm,更 40 200805362 佳為1至20 nm,尤佳為2至10 nm,於基板(“陸地,,)上,並取 決於溝槽之幾何分佈,較佳20至150 nm,更佳30至100 nm, 尤佳40至80 nm,在溝槽中。 適用於反射層之反射材料特別包括金屬,其提供使用 5 於紀錄與播放之雷射光之良好反射,例如元素週期表上主 要族群13-15族之金屬,以及次要族群3-12族之金屬。A1、Ο This area of technology should be understood by other optical information media or easily identified as additive concentrations that are particularly suitable for a purpose. The additive is used at a concentration of 5 degrees, for example, 0.001 to 1000% by weight, preferably 1 to 50% by weight, based on the weight of the recording medium of the formula (I). The optical recording material of the present invention has an excellent solid amorphous recording layer spectral characteristic. The solids accumulation tendency of such compounds is surprisingly low. It is not desirable to have crystals, and fortunately, no crystals are formed or only negligible amounts are formed. The reflectance of each layer in the write and read wavelength ranges is suitable for low to high, and high to low systems. Due to the good properties of the layers, a fast optical record with high sensitivity, high repeatability and spatially accurate mark boundaries - and very short (2T) marks - can be obtained, and the refractive index and reflectivity of the complex will vary greatly, providing 15 height contrast. The difference between the mark length and the separation distance ("jitter") is quite small, which allows for a high storage density, using a relatively thin recording path with a narrow track space ("distance"). The dye layer is quite good in quality, producing high signal-to-noise ratio (CNR, PRSNR) and surprisingly low error rate (bER or SbER) during playback. 38 200805362 Due to good solubility, including in protic solvents, the solution can be used at high concentrations without problems with the stagnation, such as when storage, the problems encountered in spin coating are greatly reduced. This applies in particular to compounds containing a branch of €3-08. 5 Recording and playback can be performed at the same wavelength, so a simple optical system is preferred, with a single laser source, preferably from 350 to 500 nm, more preferably from 370 to 450 nm. It is especially preferred for the UV range, from 370 to 390 nm, especially about 380 nm, or at the edge of the visible range, from 390 to 430 nm, more preferably about 405 ± 5 nm. In the compression zone, a 10 gauge or violet laser diode with a high aperture optical system (such as Nichia GaN 405 nm) can be found on a 120 mm disc with a fairly small mark and a narrow track of about 2 〇 to 25 Gb per record layer. At 380 nm, indium-filled UV-VCSELs (Yertical-£_avity Surface-making partner) can be used, where the laser source has been prototyped [jung Han with α/·, see MRS Internet J. 15 Nitride Semicond· Res· 5S1, W6.2 (2000)]. Accordingly, the present invention is also related to a method of recording or playing back data in which the data on the optical recording medium of the present invention is recorded or played at a wavelength of less than 6 〇〇 nm', preferably from 350 to 5 feet. The recording medium is based on known recording media and is, for example, 20 similar to the above. It may be composed of, for example, a transparent substrate, a recording layer containing at least one compound of the formula (I), a reflective layer, and a cover layer, which may be affected by the substrate. Suitable substrates are, for example, glass, minerals, ceramics, and thermosets and thermoplastics. Preferred supports are glass, and homo- or copolymerized plastic 39 200805362. Suitable plastics are ', for example, thermoplastic polycarbonate, polyamide, polyester, polypropylene ester, and polymethyl (tetra) ester, polycarbazide, polyolefin, polyglycolated ethylene, polyfluorinated Ethylene, polyamidamine, thermoset polymer, and (iv) resin. Particularly preferred is a polycarbonate substrate, which may be, for example, an injection molding type 5 substrate. The substrate may be in a pure form, or may comprise a general additive such as a pre-6 UV absorber or dye such as Jp_A_〇. As described in 4/167239, it acts as a light stabilizer for the recording layer. In the latter case, in the wavelength range of the writing (laser emission wavelength), the dye added to the support substrate does not have or has only very low absorption, preferably up to about 2 G% of the laser light is focused on the recording layer. . 10 The substrate is preferably transparent, at least in the range of 350 to 500 nm, thus allowing at least 80% of the incident light to be at the write or read wavelength. The substrate is preferably 10 μηι to 2 mm, more preferably 1〇0 to 12〇〇μιιυ^, especially 600 to 1100 μηι thick, preferably having a spiral guiding groove (obedient) in the coating layer, the groove The groove depth is 10 to 20 〇 nm, preferably 2 〇 to 9 〇 11111, the groove width is 15 100 to 400 nm 'preferably 150 to 250 nm, and the space between the two turns is 2 〇〇 to 600 nm, preferably 300 to 450 nm. Grooves of different cross sections are known, for example, hexagonal, ladder or V-shaped. Similar to the known CD-R and dvd_r media, the guiding groove can additionally perform small-cycle or cycle-like side skewing (shake-free) to synchronize the speed of the transfer with the absolute positioning of the read head (Pidup). 20 is possible. In addition, or in addition to skewing, the same function can be performed by marking adjacent to the pre-pits. With this spatial distribution, it is more likely to comply with the HDDVD-RTM specification. The recording medium can be applied by, for example, spin-coating a solution for the purpose of producing a layer which is as amorphous as possible. The thickness of the layer is preferably 〇 to 4 〇 nm, and more preferably 40 200805362 is preferably 1 to 20 nm. 2 to 10 nm on the substrate ("land", depending on the geometry of the trench, preferably 20 to 150 nm, more preferably 30 to 100 nm, especially 40 to 80 nm, in the trench Reflective materials suitable for the reflective layer include, in particular, metals which provide good reflection of the laser light used for recording and playback, such as metals of the 13-15 family of major groups on the periodic table, and groups 3-12 of the minor groups. Metal. A1

In、Sn、Pb、Sb、Bi、Cu、Ag、Au、Zn、Cd、Hg、Sc、Y、 La、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Fe、Co、Ni、In, Sn, Pb, Sb, Bi, Cu, Ag, Au, Zn, Cd, Hg, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni,

Ru、Rh、Pd、Os、Ir、Pt,以及·系金屬 Ce、Pr、Nd、Pm、 10 Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb與Lu,以及其合 金,特別適用。由於其高反射性,以及容易製造,較佳為 鋁、銀、金或其合金(如白金合金)之反射層,尤其是鋁,基 於經濟與生態學考量。反射層較佳5至200 nm厚,更佳10 至150 nm厚,尤佳50至120 nm厚,但更厚之反射層,例如1 15 或更多,亦可行。 適用於覆蓋層之材料,主要包括塑膠,其可以薄層方 式施加於反射層上,不論是直接或以黏著促進劑幫助。較 乜選擇機械性與熱穩定之塑膠,具有良好之表面特性,其 可經更進一步修飾,如寫入。該塑膠可為熱固性塑膠與熱 20塑性塑膠。直接施加覆蓋層,較佳以輻射固化(如使用UV 照射)包覆,其特別簡單且可經濟製造。廣範圍之輻射可固 化材料為已知。輻射可固化單體與寡合物之範例為二醇、 三醇與四醇之丙烯酸酯與甲基丙烯酸酯、芳香族四羧酸與 芳曰無一胺,其具有Ci_C4烧基於胺基之至少二鄰位置上, 41 200805362 之聚亞醯胺,以及具有二燒基馬來醯亞胺基團之募合物, 如二曱基馬來醯亞胺基團。就使用黏著促進劑施加之覆蓋 層而s,較佳使用與基板層相同之材料,尤其是聚碳酸酯。 所使用之黏著促進劑較佳類似於輻射可固化單體與募合 5物。除了使用黏著促進劑施加之覆蓋層之外,亦可使用— 第-基板,纟包含一紀錄與反射|,使得該紀錄媒體可於 二面上播放。較佳為對稱結構,該二部分之反射側結合在 起藉由直接使用黏著促進劑,或是經由一中間層。 在此結構中,覆蓋層,或覆蓋材料之光學特性,實際 10上不重要,只要可施加,如藉由UV照射固化。該覆蓋層之 功用為確保紀錄媒體整體之機械強度,若有需要,以及薄 反射層之機械強度。若紀錄媒體足夠強勃,例如當厚反射 層存在日t ’可省略覆蓋層。該覆蓋層之厚度取決於紀錄媒 一 _尽度較仏隶大為約2 mm厚。該覆蓋層較佳為1〇 15 μηι 至 1 mm 厚。 本發明之紀錄媒體亦具有額外層,例如干擾層或屏障 層可建構具有多紀錄層(如二至十層)之紀錄媒體 。此材料 °構一用途為此技術領域者已知。干擾層所在處較佳安 排於紀錄層與反射層之間,及/或紀錄層與基板之間,並由 20 ;丨電材料組成,例如,描述於ΕΡ-Α-0 353 393之Ti02、Si3N4、 ZnS或矽膠樹脂。 亦可建構具有多紀錄層(例如2、3、4、5、6、7、8、9 或⑼之紀錄媒體。尤其是,可使用雙層光碟,其中二紀錄 層白可自同一側紀錄與讀取:例如雙層HDDVD-Rtm,特徵 42 200805362 為30GB/側。 衣仏此夕層媒體之一方法稱之為“2p法,,,使用下列實 施例:透明基板/紀錄材料/半反射層/隔板層,施以旋轉塗 佈,並經由透明壓模(stamper)固化/第二紀錄層/反射層/黏 5著層/第二半光碟。亦可引人中間保護層,若需要的話。 另一製造雙層媒體之方法稱之為“反向堆疊”,或是‘‘逆 向堆$’係由下列不範半光碟之一側組成:透明基板/紀錄 層/半反射層,與另一半-光碟,具有相反層向順序:基板/ 反射層/紀錄層。該二半·光碟之後以黏著層連結在一起,使 10得該二基板形成最終光碟之二面。巾間保護層可引入各 處,當有需要時,例如介於紀錄層與黏著層之間。此技術, 係描述於,如WO 04/021 336以及wo 04/042 717。該溝槽 之幾何分佈與層厚度必須在上述之相同範圍内,差異為該 紀錄用逆向堆疊半光碟係於溝槽上製造。後者之紀錄層厚 15度較佳為20至150 nm,更佳30至1〇〇 nm,尤佳為40至80 nm ’於溝槽上’取決於溝槽之幾何分佈,較佳為%至 nm,更佳為4〇至15〇 nm,尤其是5〇至1〇〇 nm,於溝槽内。 因此’本發明亦相關於一種光學紀錄媒體,適用於以 低於600 nm,較佳35〇至5〇〇 nm之雷射進行光學紀錄,包含 20 一具溝槽之基板,一反射層,以及至少二紀錄執道,其中 該紀錄執道包含一下式化合物 43Ru, Rh, Pd, Os, Ir, Pt, and · metals Ce, Pr, Nd, Pm, 10 Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and alloys thereof, especially Be applicable. Reflective layers of aluminum, silver, gold or alloys thereof (e.g., platinum alloys), especially aluminum, are based on economic and ecological considerations due to their high reflectivity and ease of fabrication. The reflective layer is preferably 5 to 200 nm thick, more preferably 10 to 150 nm thick, and particularly preferably 50 to 120 nm thick, but a thicker reflective layer such as 1 15 or more may be used. Suitable materials for the cover layer, mainly including plastic, which can be applied to the reflective layer in a thin layer, either directly or with an adhesion promoter. The choice of mechanically and thermally stable plastics has good surface properties and can be further modified, such as writing. The plastic can be thermosetting plastic and hot 20 plastic. The cover layer is applied directly, preferably by radiation curing (e.g., using UV irradiation), which is particularly simple and economical to manufacture. A wide range of radiation curable materials are known. Examples of radiation curable monomers and oligomers are acrylates and methacrylates of diols, triols and tetraols, aromatic tetracarboxylic acids and aryl fluorene without amines, which have at least two of Ci_C4 based on amine groups. Adjacent to, 41 200805362 poly-liminamide, and a composition having a dicalcium-maleimine group, such as a dimercapto-maleimine group. For the use of the cover layer applied by the adhesion promoter, it is preferred to use the same material as the substrate layer, especially polycarbonate. The adhesion promoter used is preferably similar to the radiation curable monomer and the chelating agent. In addition to the use of an overlay applied by an adhesion promoter, a first substrate can be used, which includes a record and reflection | so that the recording medium can be played on both sides. Preferably, the symmetrical structure is bonded to the reflective side of the two portions by direct use of an adhesion promoter or via an intermediate layer. In this configuration, the optical properties of the cover layer, or cover material, are practically unimportant as long as they can be applied, such as by UV radiation. The function of the cover layer is to ensure the overall mechanical strength of the recording medium, if necessary, and the mechanical strength of the thin reflective layer. If the recording medium is strong enough, for example, when the thick reflective layer is present, the cover layer may be omitted. The thickness of the cover layer is about 2 mm thick depending on the recording medium. The cover layer is preferably from 1 〇 15 μηι to 1 mm thick. The recording medium of the present invention also has an additional layer. For example, the interference layer or the barrier layer can construct a recording medium having a plurality of recording layers (e.g., two to ten layers). The use of this material is known to those skilled in the art. Preferably, the interference layer is disposed between the recording layer and the reflective layer, and/or between the recording layer and the substrate, and is composed of 20 丨 electrically materials, for example, Ti02, Si3N4 described in ΕΡ-Α-0 353 393. , ZnS or silicone resin. It is also possible to construct a recording medium with multiple recording layers (for example, 2, 3, 4, 5, 6, 7, 8, 9, or (9). In particular, a double-layer disc can be used, of which two recording layers can be recorded from the same side. Read: for example, double-layer HDDVD-Rtm, feature 42 200805362 is 30GB/side. One method of lining layer media is called "2p method,", using the following examples: transparent substrate / recording material / semi-reflective layer / separator layer, applied by spin coating, and cured via a transparent stamper / second recording layer / reflective layer / sticky layer / second half of the disc. Can also introduce an intermediate protective layer, if necessary Another method of making double-layer media is called "reverse stacking", or ''reverse stack $' is made up of one side of the following non-panel: transparent substrate / recording layer / semi-reflective layer, and another Half-disc, with the opposite layer sequence: substrate / reflective layer / recording layer. The two halves are bonded together with an adhesive layer, so that the two substrates form the two sides of the final optical disc. Everywhere, when needed, such as between the recording layer and the adhesive layer. , as described in WO 04/021 336 and wo 04/042 717. The geometrical distribution of the groove and the layer thickness must be within the same range as described above, with the difference that the recording is performed on the groove by retro-disposing the semi-disc. The latter recording layer thickness of 15 degrees is preferably 20 to 150 nm, more preferably 30 to 1 〇〇 nm, and particularly preferably 40 to 80 nm 'on the groove' depending on the geometric distribution of the groove, preferably % To the nm, more preferably 4 〇 to 15 〇 nm, especially 5 〇 to 1 〇〇 nm, in the trench. Therefore, the present invention is also related to an optical recording medium suitable for use below 600 nm, preferably An optical record of 35 to 5 〇〇 laser, comprising 20 a grooved substrate, a reflective layer, and at least two record obstructions, wherein the record contains a compound of the formula 43

p Gp G

R〇 ' —〇 本么明之紀錄媒體 , ⑴, 佈方法,取決於所 [知方法製造,可使用各種塗 5 15 適當之塗佈方法為之持料及其,能。 ^ 刮刀-施加,以及旋轉、涂】士 /又入、傾倒、刷-塗佈、 下進行。f,例如,使=,以及蒸汽沈積法,在高真空 之溶液。當使用溶”,:倒法時,—般使用有機容劑中 些溶劑不敏感。二,:、注意所使用之支撑物應,於這 eP-A-_791。 H佈方法與溶劑係揭示於,如 n 旋轉塗佈施加染财式施加,已知可使 ::劑特別為醇類,如”氧基乙醇、™:醇使 &丁醇'«嗣,例如二丙酮醇或3俩 -3-甲基-2-丁_、經基酿,例如乳酸甲酉旨,或丁酸甲醋,或 較佳為氟化之醇類,如,2,2,3,3_四氟]_丙醇,或似三 氟乙醇’及其混合物。更適用之溶劑為技術上已知,且揭 示於,如ΕΡ-Α·0 483 387者。 金屬反射層之施加較佳受到濺鍍或真空蒸汽沈積影 響。此技術為已知,且描述於專業文獻中(如j丄.v〇ssen and 20 W. Kern,“Thin Film Processes”,Academic Press,1978)。該 44 200805362 操作較佳玎連續進行,並達到良好之反射性,以及金屬反 射層之高度黏著性。 紀錄係依據已知方法進行,藉由寫入固定或可變長度 之訊洞(標記),以經調整、聚焦之雷射光,以固定或可變速 5 度引導至紀錄層之表面。資訊之讀取係依據已知方法進 行,藉由標示反射度之改變,使用雷射照光,如描述於 “CD-Player und R-DAT Recorder”(Claus Biaesch-Wiepke,R〇 ' —〇 The recording medium of this Ming, (1), cloth method, depending on the method of manufacture, can be used to support materials and materials. ^ Scraper-applied, as well as rotating, coating, re-entry, pouring, brush-coating, and lowering. f, for example, by =, and by vapor deposition, a solution under high vacuum. When using the "dissolving":: when the method is reversed, the solvents used in the organic solvent are not sensitive. Second,: Note that the support used should be in this eP-A-_791. The H cloth method and the solvent system are disclosed in For example, n spin coating is applied by dyeing, and it is known that: the agent is particularly an alcohol such as "oxyethanol, TM: alcohol, &butanol", such as diacetone alcohol or 3 - 3-methyl-2-butyl-, base-based, for example, lactic acid, or methyl butyrate, or preferably fluorinated alcohol, such as 2,2,3,3_tetrafluoro] Propanol, or like trifluoroethanol' and mixtures thereof. More suitable solvents are known in the art and are disclosed, for example, in ΕΡ-Α·0 483 387. The application of the metallic reflective layer is preferably affected by sputtering or vacuum vapor deposition. This technique is known and described in the specialist literature (e.g., J. V〇ssen and 20 W. Kern, "Thin Film Processes", Academic Press, 1978). The 44 200805362 operation is preferably continuous and achieves good reflectivity and high adhesion of the metal reflective layer. The recording is performed according to known methods by writing fixed or variable length holes (markers) to the surface of the recording layer with fixed or variable speed laser light at a fixed or variable speed of 5 degrees. The reading of the information is carried out according to known methods, using laser illumination by indicating a change in reflectance, as described in "CD-Player und R-DAT Recorder" (Claus Biaesch-Wiepke,

Vogel Buchverlag,Wtirzburg 1992)者。此技術領域者應熟習 這些裝置。 10 本發明之包含資訊媒體特別為WORM形式之光學資訊 材料。可用於,如,類似電腦中之CD-R (壓縮光碟-可讀取, compact逛sc - lecordable)或DVD-R (數位影像光碟-可讀 取,红igital yideo出sc - recordable),亦可作為辨識與密碼卡 之儲存材料,或用於產生繞射光學元件,如全像術。 15 此外,然而,亦有實質上不同於CD-R與DVD-R之紀錄 媒體’其中紀錄與播放並非發生於基板上,而是在覆蓋層 (溝槽内或溝槽上紀錄)。因此,覆蓋層與基板之個別角色, 尤其是幾何分佈與光學特性,為可逆,與上述結構相較。 類似概念係多次描述於Proceedings SHE-Int.Soc Opt Eng 2〇 i^3864中,描述數位影像紀錄與雷光GaN雷射二極體結 合。就此種紀錄媒體而言,其特別適用於高儲存密度,並 具有相對小之標記(“訊洞”),而精準之對焦相當重要,使得 製造流程,當實質上類似時,便相當難操作。 然而,本發明之式(I)化合物,亦出奇地符合逆向層結 45 200805362 構曰益增加之要求。因此較佳為具有層順序為基板、反射 層、紀錄層與覆蓋層之逆向層結構。因此,紀錄層位於反 射層與覆蓋層之間。薄覆蓋層之厚度特佳為約50至400 μιη (一般紀錄與讀取為100 μιη,具有孔徑值0.85)。 5 逆向層結構中,紀錄與反射層原則上具有相同之結 構,如上所述。由於溝槽之幾何分佈,因此其通常具有上 述範圍之尺寸。 該逆向層結構需要特別高之標準,而所使用之本發明 化合物可良好地滿足此標準,例如,當紀錄層施加至金屬 10 反射層時,特別是當需要覆蓋層時,以提供適當保護對抗 磨損、光氧化、指紋、濕氣與其他環境影響,較佳具有厚 度範圍為0.01至0.5 mm,更佳範圍為0.05至0.2 mm,尤佳範 圍為 0.08至0.13 mm。 覆蓋層較佳係由具有穿透率80%或更高之材料組成, 15 於雷射寫入或讀取之波長下。適用於覆蓋層之材料包括, 如,上述材料,尤其是碳酸酯(如Pure Ace®或Panlite®,Teijin Ltd),纖維素三酷酸酯(如Fujitac®,Fuji Photo Film),或聚 乙稀對苯二甲酸酯(如Lumirror®,Toray Industry),特佳為聚 碳酸酯。尤其是在直接施加於覆蓋層之情況下,輻射固化 20 覆蓋,如上述者,為較佳,如SD347™ (Dainippon Ink)。 該覆蓋層可直接施加至固體紀錄層上,藉由適當之黏 著促進劑。在另一實施例中,施加至固體紀錄層一額外的 金屬、經交聯有機金屬,或較佳介電無機材料之分離薄層, 如厚度為0.001至10 μιη,較佳0.005至1 μιη,尤佳0.01至0.1 46 200805362 ‘ _,如〇.05至〇·08 _,在介電分離層中,以及0.001至0 02 μπ^,在金屬分離料。分離層與_應之方法係揭示於. 麵2 438,該份參考資料特別附於此。若希望,此覆蓋可 以相同厚度施加,介於支撐材料與金屬反射層之間,或介 5於金屬反射層與光學紀錄層之間。此在某些情況下相當且 有優勢,如使用銀反射物與含硫添加物之組合於紀錄層中。 在-特定變化中,施加一額外的金屬、經交聯有機金 屬,或較佳介電無機材料之分離薄層,如厚度為0.001至10 ㈣,較佳請5至1陶,尤恤1至0.1㈣,至該固體紀 10錄層。由於其高反射性,金屬分離層較佳厚度最大值為〇 〇2 μηι厚。分離層與相對應之方法係揭示於w〇 〇纖2极, 該份參考資料特別附於此。 除了含有-或多種式⑴化合物與選擇性地一般添加物 之外,本發明之光學紀錄媒體亦可包含其他發色團,較佳 15為不含金屬之發色團。其他發色團,若希望的話,可加入工 至200%重,以式(I)化合物總重量為基準,尤其是⑺至观 重’以式(I)化合物總重量為基準。 包含式(I)化合物之光學紀錄光碟,會產生絕佳之結 果,當於405 nm紀錄與播放時,特別是就反射性、調製、 2〇抖動卬tter)、PRSNR,及/或bER或SbER方面。如上所述, 可使用其於南至低紀錄’以及低至高紀錄。 因此’本發明亦包含-示範紀錄媒體,其中該記錄執 道之照光後最大反射度為14至28%,其上軌道訊洞可以功 率為7±5mW之405土5 nm雷射光寫入,訊洞調製係以功率為 47 200805362 0.4土0.2 mW之405土5 nm雷射測量,為至少〇·30,較佳為0.38 至0.60。 該調製(modulation)係如一般技術定義’為訊洞標記資 訊前後改變之反射比例(R):調製KRmax - Rmin)/Rmax。 5 本發明亦包含一種示範紀錄媒體,其中該記錄執道之 照光前反射度為10至30%,較佳12至25%,其上轨道訊洞可 以功率為5土4 mW之405土5 nm雷射光寫入,訊洞調製係以功 率為0.35土0.15 mW之405土5 nm雷射測量,為至少〇·3〇,較 佳為0.38至0.60。 10 在以波長為350-500 nm之雷射照射後,該示範化合物 之光學特性會以完全出乎預料之方式改變。折射率複數之 虛數部分(k)會隨著高感度很快地降低,而折射率複數之實 數部分(η)則維持,無明顯改變。令人驚訝地,此獨特之組 合會產生光學紀錄媒體,其中該反射度會降低,當以功率 15 為5士4 mW,波長350-500 nm之雷射照射後。極佳之情況 為,可使用標準之溝槽幾何分布,較佳該幾何分布符合 Blu-ray Disc™標準,如上所述。由於有光干擾現象,光碟 可製備為適用於高至低紀錄極性,或顯示增進之表現度, 當使用低至向紀錄極性時。 20 因此,本發明最終亦相關於一種光學紀錄媒體,包含 一紀錄染料,其為長波長,與雷射波長相較時,其上低反 射度之媒體訊洞係寫入於具較高反射度之執道上。 此種高至低光學紀錄媒體較佳具有照光前反射度為1〇 至30%,較佳12至25%,照光後反射度為〇至20%,較佳1至 48 200805362 15%,其上執道訊洞可以功率為5±4 mW之350-500 nm雷射 光照射。較佳為,使用於此種媒體中之式(I)化合物具有折 射率(η) 1·5±〇·4,尤其是1·5±0·25,最佳為1·5±〇·15,具有消 光係數(extinction coefficient)(k)大於〇·2〇,一般為 〇·25至 5 〇·60,尤其是0.25至0·50,最佳為0.30至0.40,於雷射寫入 及/或讀取波長下。 令人驚§牙的是,本發明係提供一種光學紀錄媒體,其 可與Bhi-ray DiscTM標準相容,可使用現有之讀取機。此目 標在先前技藝中從未達成。 1〇 【實施方式】 下列範例係用於說明本發明,而非限制(“%,,為重量百 分比,除非另有指出): ΙΑ!: 60.0g之97% 2-胺基-5-硝基噻唑,係攪拌溶於 880 ml之50% (體積)硫酸中,於23t。淡棕色溶液冷卻至_ι〇 15 0。在40分鐘内,加入1〇〇 ml之4N亞硝酸鈉。暗藍綠色溶 液係於-10至繼續攪拌15分鐘。48§間本二酚係溶於4〇〇 ml乙醇中,並冷卻至_10至-15t:。所得溶液之後緩慢加入該 重氮離子溶液中。隨即形成一厚、暗紅色沈澱,溫度升高 至約〇t。之後反應混合物於〇至5t:下繼續攪拌2小時,以 20 500 ml水稀釋,並抽氣過濾。經抽氣過濾之物質係以4公升 水清洗,並於60〇c/103Pa下乾燥24小時,產 座玍/8g之紅棕色 產物,具下式: 49 200805362 ΗVogel Buchverlag, Wtirzburg 1992). Those skilled in the art should be familiar with these devices. 10 The information medium of the present invention is specifically an optical information material in the form of WORM. Can be used, for example, in a computer-like CD-R (compressed disc - readable, compact st-lecordable) or DVD-R (digital video disc - readable, red igi yideo sc - recordable), Used as a storage material for identification and cryptographic cards, or for generating diffractive optical elements such as holograms. 15 In addition, however, there are also recording media that are substantially different from CD-R and DVD-R. Where recording and playback do not occur on the substrate, but in the overlay (recorded in the trench or on the trench). Therefore, the individual roles of the cover layer and the substrate, especially the geometric distribution and optical properties, are reversible compared to the above structure. A similar concept is described in Proceedings SHE-Int. Soc Opt Eng 2〇 i^3864, which describes the combination of digital image recording with a Rayleigh GaN laser diode. For this type of recording medium, it is particularly suitable for high storage density and has a relatively small mark ("hole"), and precise focus is so important that the manufacturing process, when substantially similar, is quite difficult to operate. However, the compound of the formula (I) of the present invention is also surprisingly consistent with the requirement of an increase in the reverse layering. Therefore, it is preferable to have a reverse layer structure in which the layer order is a substrate, a reflective layer, a recording layer, and a cover layer. Therefore, the recording layer is located between the reflective layer and the cover layer. The thickness of the thin cover layer is particularly preferably about 50 to 400 μm (typically recorded and read as 100 μm, having an aperture value of 0.85). 5 In the reverse layer structure, the recording and reflection layers have in principle the same structure, as described above. Due to the geometrical distribution of the grooves, they typically have the dimensions of the above range. The reverse layer structure requires a particularly high standard, and the compound of the invention used satisfies this criterion well, for example, when a recording layer is applied to the metal 10 reflective layer, particularly when a cover layer is required, to provide adequate protection against Wear, photo-oxidation, fingerprints, moisture and other environmental influences preferably have a thickness in the range of 0.01 to 0.5 mm, more preferably in the range of 0.05 to 0.2 mm, and particularly preferably in the range of 0.08 to 0.13 mm. The cover layer is preferably composed of a material having a transmittance of 80% or higher, 15 at a wavelength at which the laser is written or read. Suitable materials for the cover layer include, for example, the above materials, especially carbonates (such as Pure Ace® or Panlite®, Teijin Ltd), cellulose tristearate (such as Fujitac®, Fuji Photo Film), or polyethylene. Terephthalate (such as Lumirror®, Toray Industry), especially polycarbonate. Especially in the case of direct application to the cover layer, radiation curing 20 covers, as described above, preferably, such as SD347TM (Dainippon Ink). The cover layer can be applied directly to the solid record layer by means of a suitable adhesion promoter. In another embodiment, the solid recording layer is applied to an additional layer of a metal, a crosslinked organometallic, or preferably a dielectric inorganic material, such as a thickness of 0.001 to 10 μm, preferably 0.005 to 1 μm. More preferably 0.01 to 0.1 46 200805362 ' _, such as 〇.05 to 〇·08 _, in the dielectric separation layer, and 0.001 to 0 02 μπ^, in the metal separation material. The separation layer and the method of the method are disclosed in Fig. 2 438, which is specifically attached hereto. If desired, the cover can be applied at the same thickness between the support material and the metallic reflective layer or between the metallic reflective layer and the optical recording layer. This is quite advantageous in some cases, such as the use of a combination of a silver reflector and a sulfur-containing additive in the recording layer. In a particular variation, an additional layer of metal, crosslinked organometallic, or preferably a dielectric inorganic material is applied, such as a thickness of 0.001 to 10 (four), preferably 5 to 1 ceramic, and 1 to 1 0.1 (four), to the 10th layer of the solid record. Due to its high reflectivity, the metal separation layer preferably has a maximum thickness of 〇 2 μηι thick. The separation layer and the corresponding method are disclosed in the 〇 〇 fiber 2 pole, which is specifically attached hereto. In addition to containing - or a plurality of compounds of formula (1) and optionally general additives, the optical recording medium of the present invention may comprise other chromophores, preferably 15 being a metal-free chromophore. Other chromophores, if desired, may be added to a weight of 200% based on the total weight of the compound of formula (I), especially (7) to weight, based on the total weight of the compound of formula (I). An optical recording disc containing a compound of formula (I) will produce excellent results when recorded and played at 405 nm, especially for reflectivity, modulation, jitter, PRSNR, and/or bER or SbER aspect. As mentioned above, it can be used in the south to record low and low to high. Therefore, the present invention also includes an exemplary recording medium in which the maximum reflectance of the recorded light is 14 to 28%, and the upper orbital tunnel can be written with a power of 7±5 mW of 405 soil 5 nm laser light, and the hole is written. The modulation is measured at a power of 47 200805362 0.4 soil 0.2 mW 405 soil 5 nm laser, at least 〇·30, preferably 0.38 to 0.60. The modulation is as defined by the general art 'reflection ratio (R) before and after the cell tag information change: modulation KRmax - Rmin) / Rmax. 5 The present invention also includes an exemplary recording medium in which the pre-illumination reflectance of the recording is 10 to 30%, preferably 12 to 25%, and the upper orbital tunnel can have a power of 5 soils, 4 mW, 405 soils, 5 nm mines. For the ray writing, the hole modulation is measured by a 405-earth 5 nm laser with a power of 0.35 ft. 0.15 mW, which is at least 〇·3 〇, preferably 0.38 to 0.60. 10 After exposure to a laser with a wavelength of 350-500 nm, the optical properties of the exemplary compound will change in a completely unexpected manner. The imaginary part (k) of the complex index of refraction quickly decreases with high sensitivity, while the real part (η) of the complex index of the refractive index is maintained without significant change. Surprisingly, this unique combination produces an optical recording medium in which the reflectance is reduced when illuminated at a power of 15 ± 4 mW and a wavelength of 350-500 nm. An excellent case is that a standard groove geometry can be used, preferably in accordance with the Blu-ray DiscTM standard, as described above. Due to light interference, the disc can be prepared for high to low recording polarity, or for improved performance, when using low to record polarity. 20 Therefore, the present invention is ultimately also related to an optical recording medium comprising a recording dye which is a long wavelength, and the medium reflection channel having a low reflectance is written with a higher reflectance when compared with the laser wavelength. On the road. Preferably, the high-to-low optical recording medium has a pre-illumination reflectance of 1〇 to 30%, preferably 12 to 25%, and a post-illumination reflectance of 〇 to 20%, preferably 1 to 48 200805362 15%, on which The tunnel can be illuminated by 350-500 nm laser light with a power of 5 ± 4 mW. Preferably, the compound of formula (I) used in such a medium has a refractive index (η) of 1·5±〇·4, especially 1·5±0·25, and most preferably 1. 5±〇·15. , having an extinction coefficient (k) greater than 〇·2〇, generally 〇·25 to 5 〇·60, especially 0.25 to 0·50, optimally 0.30 to 0.40, written in laser and/or Or read at the wavelength. Surprisingly, the present invention provides an optical recording medium that is compatible with the Bhi-ray DiscTM standard and that can be used with existing readers. This goal has never been achieved in prior art. 1 〇 [Embodiment] The following examples are intended to illustrate the invention, but not to limit ("%, as a percentage by weight unless otherwise indicated": ΙΑ!: 60.0g of 97% 2-amino-5-nitro The thiazole is stirred and dissolved in 880 ml of 50% by volume sulfuric acid at 23t. The light brown solution is cooled to _ι〇15 0. Within 40 minutes, 1 〇〇ml of 4N sodium nitrite is added. Dark blue green The solution was stirred at -10 to continue stirring for 15 minutes. The 48 sec was dissolved in 4 ml of ethanol and cooled to _10 to -15 t: The resulting solution was slowly added to the diazonium ion solution. A thick, dark red precipitate formed and the temperature was raised to about 〇t. The reaction mixture was then stirred for 2 hours at 〇 to 5t: diluted with 20 500 ml of water and filtered by suction. The material filtered by suction was 4 liters of water is washed and dried at 60 ° C / 103 Pa for 24 hours, producing a red/brown product of 玍 / 8 g, with the following formula: 49 200805362 Η

OH 10 h-NMR [ppm]: 8·87 (s,Ha); 6·46 (s,Hb); 6·49/6 52 (d, Hc);7.71/7.74(d,Hd)。 龜魁1: 25g之範例1化合物係加入1〇〇ml二甲基乙醯胺 中,並於23°C攪拌。之後加入l2jg醋酸鈷(π)四水合物。二 起始物係緩慢溶解,並形成近乎黑色之溶液,其餘於室溫 下攪拌3 Μ夺之後冰紅色沈殿形成,經的也贈過滤器 抽氣過濾、,独2Gml二甲基乙_清洗。_氣過渡之物 質係授拌料於1.2升甲醇中。加人_酸鈉(無水)後,反 應混合物係加熱至6〇-机,並於該溫度下過渡澄清。減液 使用迴旋濃縮儀濃縮至· ml,並冷卻至5㈣。C,開紗 甜。沈殿物經抽氣過濾,並以甲醇清洗,溫度杯宂。於 ㈣據Pa下乾燥,得l5g之近乎黑色產物,具下式:' 〇2VsOH 10 h-NMR [ppm]: 8·87 (s, Ha); 6.46 (s, Hb); 6·49/6 52 (d, Hc); 7.71/7.74 (d, Hd). Turtle 1:25 g of the compound of Example 1 was added to 1 ml of dimethylacetamide and stirred at 23 °C. Thereafter, l2jg of cobalt (π) acetate tetrahydrate was added. The starting material slowly dissolves and forms a nearly black solution. The rest is stirred at room temperature. After 3 smashes, the ice red sag forms, and the filter is also filtered by suction, and 2Gml dimethyl b _ is washed. _ Gas transition material The broth is in 1.2 liters of methanol. After addition of sodium hydride (anhydrous), the reaction mixture was heated to 6 Torr and clarified at this temperature. Reduce the liquid Concentrate to · ml using a cyclotron concentrator and cool to 5 (four). C, the opening is sweet. The sediments were filtered by suction and washed with methanol. (4) Drying according to Pa, obtaining a nearly black product of l5g, with the following formula: ' 〇 2Vs

X=NX=N

Hd hi Ha \ ;N Hb 〇 〜C〇:Hd hi Ha \ ;N Hb 〇 ~C〇:

〇 〇〇 〇

Hc HHc H

Hr NOHr NO

Hb Na4 ]H-NMR [ppm]: 7.99 (s? H )· 5 / THW85(d,Hd)。 3),5.32 (S,HW.25 (d,趣(°塞嗤離子之合成):4g之2,5•二甲 與3.48g之碘化甲烷,係攪拌 土 &15ml之丙酮中。溶液於62 50 15 200805362 。◦加熱攪拌5小時,冷卻至室溫,並於i〇3Pa與6〇°C下揮發, 得大量產率之1,2,5-三曱基苯並噻唑碘,為灰白色粉末,具 下式:Hb Na4 ]H-NMR [ppm]: 7.99 (s? H )· 5 / THW85 (d, Hd). 3), 5.32 (S, HW.25 (d, interesting (the synthesis of sputum ion): 4g of 2,5 • dimethyl and 3.48g of methyl iodide, stirred soil & 15ml of acetone. At 62 50 15 200805362. The mixture was heated and stirred for 5 hours, cooled to room temperature, and volatilized at i〇3Pa and 6 °C to obtain a large amount of 1,2,5-trimercaptobenzothiazole iodine. It is an off-white powder with the following formula:

CH, ICH, I

UlMI (笨乙烯基噻唑離子之合成):lg之範例3產物, 與0.58g之4-二乙基胺基·苯曱醛,係攪拌溶於15 ml氯仿 中。溶液係於62°C加熱5小時,冷卻至10°C並過濾。每次以 10 ml冰冷之甲醇清洗二次,得產物為深紫色固體,具下式:UlMI (synthesis of stupid vinyl thiazole ion): Example 3 of lg, with 0.58 g of 4-diethylaminobenzofural, dissolved in 15 ml of chloroform. The solution was heated at 62 ° C for 5 hours, cooled to 10 ° C and filtered. Each time it was washed twice with 10 ml of ice-cold methanol, the product was obtained as a dark purple solid with the following formula:

10 H (鹽類之合成):0.66g範例2之產物係於23°C加入 10 ml之曱氧基丙醇中。〇 50g範例4之產物係加入1〇 ml甲醇 中,所得溶液係於23°C攪拌15h,因此得紫色懸浮液。產物 經Biichner過濾器抽氣過濾,並以甲醇清洗,之後以丨:ι甲醇 與水之混合物清洗,最終以曱醇清洗。於40°C/103 Pa下乾 15燥,得0·67§近乎黑色之產物,具下式:10 H (synthesis of salts): 0.66 g of the product of Example 2 was added to 10 ml of decyloxypropanol at 23 °C. 50 g of the product of Example 4 was added to 1 ml of methanol, and the resulting solution was stirred at 23 ° C for 15 h, thus obtaining a purple suspension. The product was suction filtered through a Biichner filter and washed with methanol, then washed with a mixture of methanol and water, and finally washed with methanol. Dry at 40 ° C / 103 Pa 15 dry, get 0. 67 § near black product, with the following formula:

51 200805362 'H-NMR [ppm]:8.77 (m? 1 H); 8.33.7.80 (m? 7 H); 7.64-7.48 (m,4 H); 7.32 (m,1 H); 6.81 (m,1 H); 6.22 (d,2 H); 5.30 (s? 2 H); 4.15 (s? 3 H); 3.37 (m? 4 H); 3.13 (s, 3 H); 1.15 (t,6 H)。 5 人max (乙 Sf*〉谷液):523 nrn (£=: 113900)。 範魁6: 之範例5化合物係溶於98.5g之2,2,3,3-四氟 丙醇中,並經0·2μιη Teflon™過濾器過濾。染料溶液之後以 250 r.p.m·速度加至ι·2 mm厚之平面聚碳酸醋光碟上(直徑 120 mm),旋轉速率增加至^㈨^㈤,使得過量之溶液可 10旋轉出,並形成均勻固體層。於70°C乾燥20分鐘後,係測 量層厚度與固體層之複合折射率,使用光譜傳送與反射測 量法’使用光學測量系統(ETA-RT™, Steag ETA-Optik51 200805362 'H-NMR [ppm]: 8.77 (m? 1 H); 8.33.7.80 (m? 7 H); 7.64-7.48 (m, 4 H); 7.32 (m, 1 H); 6.81 (m, 1 H); 6.22 (d, 2 H); 5.30 (s? 2 H); 4.15 (s? 3 H); 3.37 (m? 4 H); 3.13 (s, 3 H); 1.15 (t, 6 H ). 5 person max (B Sf*> valley solution): 523 nrn (£=: 113900). Fan Kui 6: The compound of Example 5 was dissolved in 98.5 g of 2,2,3,3-tetrafluoropropanol and filtered through a 0. 2 μιη TeflonTM filter. The dye solution is then applied to a flat polycarbonate plate (120 mm diameter) at a speed of 250 rpm. The rotation rate is increased to ^(9)^(5) so that the excess solution can be rotated 10 and a uniform solid is formed. Floor. After drying at 70 ° C for 20 minutes, the measured layer thickness and the composite refractive index of the solid layer were measured using spectral transmission and reflection measurements using an optical measurement system (ETA-RTTM, Steag ETA-Optik).

GmbH,Germany)。於405 nm,染料層具有折射率n為1.52, 以及消光係數k為0.24。 15 範U 〇 6·:下列化合物係以類似於範例丨_ 6之方式製備 與測量: 52 200805362 化合物 n k 7 °2Νγ8^Ν 印-〇^, 〇《:Ν=Ρ^0 ό。幾 s^no2 1.46 0.415 8 H3CN^0 〇2\nS>=N r-Y^N 0^=0=° 2 s^no2 1.40 0.39 9 J於。 H5C2、nXJ〇I〇 0H3 乂0 ‘ 〇ΗΓβ\〇2 1.41 0.37 10 〇2NyS °^:;〇 Χΐρ° h3c CH3 s n〇2 1.47 0.37 11 O3^: ch3 och3 sAno2 1.28 0.35 53 200805362 化合物 n k 12 H3C〇^H〇 h3c h5c2 ch3 0=〇=^n=<n. S n〇2 1.26 0.33 13 H3,HACH3 〇九' 1.33 0.30 14 nPH3 〇2\SM 〇^w=\nch3 〇Λ〇Ν=<^0 s^no2 1.29 0.33 15 OCH3 °2HyS HsC H5C2CH3 〇=ONn=<N S n〇2 1.24 0.33 16 ,Λ 〇2V HX-N+ y^x /=\ C2H5 L^N /=x V° n、\o2 1.34 0.25 17 s^no2 1.27 0.24 54 200805362 化合物 η k 18 〇2n s s^no2 19 Qh3 〇2n C^N 分 NH2 IV=P=0 CH3 。趟; s从n〇2 1.30 0.38 20 / 〇2N W、 〔n:Nn 普叫。:\:心。 3 令'巧 Μ n=< 1 ch3 S人〇2 1.25 0.29 21 ςΗ3 〇2Νγδ 〔Η 八⑷ ίΝ\1=Ρ- 3 s^no2 1.35 0.38 22 9Hs °2nys h3c 〔Vn 心 TN心〇 CH3 S 乂 ν〇2 1.36 0.25 55 200805362 化合物 n k 23 9h3 r-N ί >-N, N ch3 -〇-n-(ch2)3-n^Q- 「〇2nys 一 Im>=N /= Nx N=( )=〇 0=C^N \ N=U — ^ N〇2 — h3c + ,Ν-^ 1 - N h3c 2 1.25 0.30 24 一 〇2NtVn H3C_N^M>nC2H5 〇:2N=0〇 s八n〇2 1.53 0.20 25 〇2\ns>=n ηα A=CM^O oV^0 h3c h5c2CH3 s^no2 1.28 0.20 26 i>V^, —>H>。] 〇=CW \0 —」 o: ch3 2 1.50 0.46 56 200805362 化合物 n k 27 ,CHs ιίΝ^Ν^ _/=\ 〇^>Nn.\ sAcf3 1.30 0.38 28 Q^^nPHs VNn5>〇 ch3 ^ ch3 〇Λ。- V CH3 S N〇2 1.42 0.32 29 02NyS H3C 0^CH3 I 办。 h3c CHs ch3 s νο2 1.51 0.34 30 QH3 〔\>-N ch3 分K 卜 —。2\% _ Α〇ΐί>° — s^no2 _ h3c + ,N^ 1 J N; h3c 2 1.22 0.33 31 H5C2/CH3 2 Y^N 〇V^° _s no2 1.24 0.34 57 200805362 化合物 n k 32 Η°^α Ί。 —ν、\〇2 33 n H3C °2NvS H0^>° 52CH3 〇^H;N s 乂 n〇2 34 H3c °2NvS 52Ch3 0=C^ s^no2 1.24 0.36 35 >H>。 n、\o2 1.46 0.44 36 N=< s n〇2 1.35 0.32 58 200805362 化合物 n k 37 N、\〇2 1.35 0.43 38 -4¾¾ %=(>〇 ohh2v 〇<^7\°~ 1.25 0.38 39 H3C0^N s 乂 n〇2 1.35 0.32 40 。你。CH;%仆 〇c^5f 一s n〇2 1.36 0.32 41 H r CH3 02NVS /h55^〇CH3 —,N V w c(、〇 0=0^ s^no2 1.21 0.31 59 200805362 化合物 η k 42 °2Νγ8 h5〇, /^°crCH3 〇V^° s^no2 1.32 0.28 43 Η5〇2\ H5C2、+ 〇2NVS η5〇/ν-^» 0幾\ s ν〇2 1.33 0.29 44 ^0CH3h5c2 〇2n s Vnn=〇〇 n、\o2 1.32 0.59 45 八 °^NvS c. 〇vO TV^<>0 H5C2\ /=( /T^ J X /°^C〇'^n^"^ H5C2 H3C 、N=< s 乂 n〇2 46 och3 门 J^N 只 ¥ 印5 0 甘 ΆΝ,3 1.36 0.28 60 200805362 化合物 n k 47 0Ά'0 ν、\〇2 1.61 0.33 48 CP^^nC2Hs 〇2N^Nn^>〇 C2H5 C域 f s n〇2 1.41 0.19 49 。'加。 0娜; s n〇2 1.48 0.18 50 €^^η5 2S"H>〇 c2h5 c2h5 /°-Co^〇>^ s^ho2 1.45 0.21 51 ^νν=〇,0 一s n〇2 1.42 0.38 61 200805362 化合物 n k 52 〇2n s H3C_N:K-b--3 〇Λ〇^ί>° s〜〇2 1.50 0.46 53 HsC'Na^VC 〇2Ν?5=ς>〇 C2H5 W〇、C〇_、nH n、\o2 1.38 0.28 54 ch3 w c2h5 w〇、\〇〇、尸 n、\02 1.37 0.31 55 0CH3 〇K>Nn=<' s^no2 1.60 0.35 56 3 ^5f s^no2 1.41 0.26 62 200805362 化合物 n k 57 +-\ h3co ch 〇2nvs s n〇2 1.40 0.25 58 °>H>。 d - 0=o=-sn\02 1.60 0.32 59 ::>^^二%>。 〇=<>nn>1 s 乂 n〇2 1.49 0.24 60 |_J Q 〇2^N^-3 HsCS^^〇 hAch3 s n〇2 1.51 0.29 61 H5C2n /T-^v H3C\ + 〇2NYSV_ 〇娜; s n〇2 63 200805362 化合物 n k 62 HX? ^ H3C 〇K^N V° n、\o2 1.50 0.19 63 h3c ch3 02n s °K=A^ N. N、\o2 1.25 0.37 64 0幾\ s n〇2 1.52 0.24 65 c4~ch3 rH=〇。 N:N ί^Ί) Ρ-ο〇^ί}=Λ / CH, S」 h3c 3 1.47 0.33 66 〇CH3 s 00ΗαΛΤ 〇<^/v° -N%J 1.27 0.32 64 200805362 化合物 n k 67 ch3 y rcN^ h3c〇 ^r〇^0_q 一〇2nys — Vnn=q,0 〇^0>=^ 〇〇N,\〇 N%1 b n〇2 ,Hs9 + 〇ch3 2 68 Η5〇2ΪΗ3 〇CH3 〇Λο^ 0=〇^.\ s n〇2 1.43 0.19 69 H5C2k Η3^ + 02N. 〇 ha/N^K^ X,N 〇 h5c2^h3 °^3〇-〇〇.〇>^ 0=〇νν>χ s n〇2 1.40 0.21 70 och3 ~cc2H5 n=/=^M'c《、〇 0甘nn《,f3 1.36 0.28 71 〇CHa °2NyS 〇V^° 0=〇Λ)卫 s^no2 1.39 0.22 65 200805362 化合物 n k 72 h3cs s h3c + °2n¥s HACH3 〇οΝΐί SAN〇2 1.43 0.23 73 h3c CH3 〇2N^S sJsno2 1.44 0.31 74 rs OCH, L^N 。叫 1.27 0.32 75 P。夕 Ή〇。 W5x) 〇^° ^ -s\〇2 1.39 0.23 76 02N s OCH3 T >N /= h39+ N\ ν=^Λ=〇 0=〇nn;n h3c c2h5 3 1.34 0.30 66 200805362 化合物 n k 77 och3 〇2Ν^ν γ=ν 0〇νν.\ s ν〇2 1.33 0.28 78 气 1.40 0.22 79 〇2N^q OCH X^N /=\ h3co<K;nV, 〇=CH^ H3CCH3L^J SAN〇2 1.39 0.27 80 OCH. 〇 n 〇 h3c chX) 0=0=^^ SAN〇2 1.40 0.28 81 H3Cp2H5 pj η3〇〇4^γ η d °2NSh>〇 r ◦讀; Η3°°·^^ΛΝγ^ L N〇2 0CV^CI 1.37 0.28 67 200805362 化合物 n kGmbH, Germany). At 405 nm, the dye layer has a refractive index n of 1.52 and an extinction coefficient k of 0.24. 15 Fan U 〇 6·: The following compounds were prepared and measured in a manner similar to the example 丨 -6: 52 200805362 Compound n k 7 °2 Ν γ8^Ν 〇-〇^, 〇 ": Ν = Ρ ^ 0 ό. A few s^no2 1.46 0.415 8 H3CN^0 〇2\nS>=N r-Y^N 0^=0=° 2 s^no2 1.40 0.39 9 J. H5C2, nXJ〇I〇0H3 乂0 ' 〇ΗΓβ\〇2 1.41 0.37 10 〇2NyS °^:;〇Χΐρ° h3c CH3 sn〇2 1.47 0.37 11 O3^: ch3 och3 sAno2 1.28 0.35 53 200805362 Compound nk 12 H3C〇 ^H〇h3c h5c2 ch3 0=〇=^n=<n. S n〇2 1.26 0.33 13 H3,HACH3 〇九' 1.33 0.30 14 nPH3 〇2\SM 〇^w=\nch3 〇Λ〇Ν=&lt ;^0 s^no2 1.29 0.33 15 OCH3 °2HyS HsC H5C2CH3 〇=ONn=<NS n〇2 1.24 0.33 16 ,Λ 〇2V HX-N+ y^x /=\ C2H5 L^N /=x V° n , \o2 1.34 0.25 17 s^no2 1.27 0.24 54 200805362 Compound η k 18 〇2n ss^no2 19 Qh3 〇2n C^N min NH2 IV=P=0 CH3.趟; s from n〇2 1.30 0.38 20 / 〇2N W, [n: Nn general. :\:heart. 3 Order '巧Μ n=< 1 ch3 S人〇2 1.25 0.29 21 ςΗ3 〇2Νγδ [Η 八(4) Ν 1 1 1 3 3 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1.乂ν〇2 1.36 0.25 55 200805362 Compound nk 23 9h3 rN ί >-N, N ch3 -〇-n-(ch2)3-n^Q- "〇2nys-Im>=N /= Nx N=( ) =〇0=C^N \ N=U — ^ N〇2 — h3c + ,Ν-^ 1 - N h3c 2 1.25 0.30 24 一〇2NtVn H3C_N^M>nC2H5 〇:2N=0〇s8n〇2 1.53 0.20 25 〇2\ns>=n ηα A=CM^O oV^0 h3c h5c2CH3 s^no2 1.28 0.20 26 i>V^, —>H>.] 〇=CW \0 —” o: ch3 2 1.50 0.46 56 200805362 Compound nk 27 ,CHs ιίΝ^Ν^ _/=\ 〇^>Nn.\ sAcf3 1.30 0.38 28 Q^^nPHs VNn5>〇ch3 ^ ch3 〇Λ. - V CH3 S N〇2 1.42 0.32 29 02NyS H3C 0^CH3 I. H3c CHs ch3 s νο2 1.51 0.34 30 QH3 [\>-N ch3 points K 卜 —. 2\% _ Α〇ΐί>° — s^no2 _ h3c + , N^ 1 JN; h3c 2 1.22 0.33 31 H5C2/CH3 2 Y^N 〇V^° _s no2 1.24 0.34 57 200805362 Compound nk 32 Η°^ α Ί. —ν, \〇2 33 n H3C °2NvS H0^>° 52CH3 〇^H;N s 乂 n〇2 34 H3c °2NvS 52Ch3 0=C^ s^no2 1.24 0.36 35 >H>. n, \o2 1.46 0.44 36 N=< sn〇2 1.35 0.32 58 200805362 Compound nk 37 N, \〇2 1.35 0.43 38 -43⁄43⁄4 %=(>〇ohh2v 〇<^7\°~ 1.25 0.38 39 H3C0 ^N s 乂n〇2 1.35 0.32 40. You.CH;% servant c^5f a sn〇2 1.36 0.32 41 H r CH3 02NVS /h55^〇CH3 —,NV wc(,〇0=0^ s^ No2 1.21 0.31 59 200805362 Compound η k 42 °2Νγ8 h5〇, /^°crCH3 〇V^° s^no2 1.32 0.28 43 Η5〇2\ H5C2, + 〇2NVS η5〇/ν-^» 0 s s ν〇 2 1.33 0.29 44 ^0CH3h5c2 〇2n s Vnn=〇〇n, \o2 1.32 0.59 45 八v^NvS c. 〇vO TV^<>0 H5C2\ /=( /T^ JX /°^C〇' ^n^"^ H5C2 H3C, N=< s 乂n〇2 46 och3 Door J^N Only ¥ 5 0 Ganzi, 3 1.36 0.28 60 200805362 Compound nk 47 0Ά'0 ν, \〇2 1.61 0.33 48 CP^^nC2Hs 〇2N^Nn^>〇C2H5 C domain fsn〇2 1.41 0.19 49. 'Plus. 0 Na; sn〇2 1.48 0.18 50 €^^η5 2S"H>〇c2h5 c2h5 /°-Co ^〇>^ s^ho2 1.45 0.21 51 ^νν=〇,0 a sn〇2 1.42 0.38 61 200805362 Compound nk 52 〇2n s H3C_N:Kb--3 〇Λ〇^ί≫° s~〇2 1.50 0.46 53 HsC'Na^VC 〇2Ν?5=ς>〇C2H5 W〇, C〇_, nH n, \o2 1.38 0.28 54 ch3 w c2h5 w〇, \〇〇, corpse n, \02 1.37 0.31 55 0CH3 〇K>Nn=<' s^no2 1.60 0.35 56 3 ^5f s^no2 1.41 0.26 62 200805362 Compound nk 57 +-\ h3co ch 〇2nvs sn〇2 1.40 0.25 58 °&gt ;H>. d - 0=o=-sn\02 1.60 0.32 59 ::>^^2%>. 〇=<>nn>1 s 乂n〇2 1.49 0.24 60 |_J Q 〇2^N^-3 HsCS^^〇hAch3 sn〇2 1.51 0.29 61 H5C2n /T-^v H3C\ + 〇2NYSV_ 〇 ;; sn〇2 63 200805362 Compound nk 62 HX? ^ H3C 〇K^NV° n, \o2 1.50 0.19 63 h3c ch3 02n s °K=A^ N. N, \o2 1.25 0.37 64 0 \ \ sn〇2 1.52 0.24 65 c4~ch3 rH=〇. N:N ί^Ί) Ρ-ο〇^ί}=Λ / CH, S” h3c 3 1.47 0.33 66 〇CH3 s 00ΗαΛΤ 〇<^/v° -N%J 1.27 0.32 64 200805362 Compound nk 67 ch3 y rcN^ h3c〇^r〇^0_q 一〇2nys — Vnn=q,0 〇^0>=^ 〇〇N,\〇N%1 bn〇2 ,Hs9 + 〇ch3 2 68 Η5〇2ΪΗ3 〇CH3 〇Λο ^ 0=〇^.\ sn〇2 1.43 0.19 69 H5C2k Η3^ + 02N. 〇ha/N^K^ X,N 〇h5c2^h3 °^3〇-〇〇.〇>^ 0=〇νν> χ sn〇2 1.40 0.21 70 och3 ~cc2H5 n=/=^M'c", 〇0甘nn", f3 1.36 0.28 71 〇CHa °2NyS 〇V^° 0=〇Λ)Wei s^no2 1.39 0.22 65 200805362 Compound nk 72 h3cs s h3c + °2n¥s HACH3 〇οΝΐί SAN〇2 1.43 0.23 73 h3c CH3 〇2N^S sJsno2 1.44 0.31 74 rs OCH, L^N . Called 1.27 0.32 75 P. Xi Xi. W5x) 〇^° ^ -s\〇2 1.39 0.23 76 02N s OCH3 T >N /= h39+ N\ ν=^Λ=〇0=〇nn;n h3c c2h5 3 1.34 0.30 66 200805362 Compound nk 77 och3 〇 2Ν^ν γ=ν 0〇νν.\ s ν〇2 1.33 0.28 78 Gas 1.40 0.22 79 〇2N^q OCH X^N /=\ h3co<K;nV, 〇=CH^ H3CCH3L^J SAN〇2 1.39 0.27 80 OCH. 〇n 〇h3c chX) 0=0=^^ SAN〇2 1.40 0.28 81 H3Cp2H5 pj η3〇〇4^γ η d °2NSh> 〇r ◦ reading; Η3°°·^^ΛΝγ^ LN〇 2 0CV^CI 1.37 0.28 67 200805362 Compound nk

〇 1.41 0.28 83〇 1.41 0.28 83

H,C C2H5 OCH0 HoC0 HXOH,C C2H5 OCH0 HoC0 HXO

〇CH ^cc2h5〇CH ^cc2h5

0oN0oN

N0o 1.41 0.30N0o 1.41 0.30

0oN 84 〇CH HoC00oN 84 〇CH HoC0

〇 7 'Π h5〇2ch, Cl °<>=v>x SAN〇。 〇 1.43 0.26 OCH, h3c〇 h3c〇〇 7 'Π h5〇2ch, Cl °<>=v>x SAN〇. 〇 1.43 0.26 OCH, h3c〇 h3c〇

〇2\nS>=n 〇现\ 〇CH H3CCH3 S-〇2\nS>=n \ \ H CH H3CCH3 S-

NO 2 1.37 0.28 68 200805362 化合物 n k 86 h5c2^Pci 0=Onn=<n SAN〇2 87 〇2NTSvn °k>nnv SAN〇2 1.32 0.24 88 :5>^r) 5〇- 〇^nn>! SAN〇2 1.32 0.21 89 〇ch3 〇2Nys>_N -4¾ A〇n^0 Cl h2^ci s n〇2 1.37 0.37 90 o2n s ^i0CV idO0 hAch3 N"s^n〇2 1.40 0.36 91 h3c h3c + °2nts /n'nM/N^ n"/Nv=^〇 0=〇N)l s n〇2 1.44 0.41 69 200805362 化合物 n k 92 H3c、 h3c+ °2nysv 0〜t〇」妙。 H3C〇 0=ONn 气、 SAN〇2 1.43 0.35 93 €rx^^: 3〇· h3〇nJ s n〇2 1.53 0.20 94 0^CH3 [S>-.N η3γ:〇η3 0=c=nn=<snj 1.47 0.33 95 〇^CH3 H3C CH3 tH3N=<S^ 1.46 0.33 96 〕餘。 CH3 S^N〇2 1.40 0.32 97 HsCr^vV h3^ + 〇2N々nn=〇0 hAch3 n\>no2 1.46 0.19 70 200805362 化合物 η k 98 PH3 rN+ Π V-N^N ch3 N- 02ν〇=ν 〇Ν\ ,Ν=〇"0 _ O^N〇l 、^\ h3c + νη(^ν 3ν+ Η W ΝΚ,1 h3c 2 1.39 0.30 99 F3C-N^>NH3CN; 、〕 〇:\coNi>0 h3c ~O^N02 1.36 0.31 100 h2n 普 n、、h3Cn+ 〇心 ΝΛ^ ρΛ〇-ΐ>° h3c 〇Κ>ν^Χν^ Ν"Ο~Ν02 1.33 0.34 101 Η 0^ch3 02ν-〇^ν Ν\ J〇 〇Λ〇Ν^° 〇 幾κ h3c ch3 νΧ>νο2 1.46 0.33 102 H3C、 H3P+ 02Ν Μ'ΝΗΧί 〇\〇Ν^>° W H3C^^ ,\心。 — ^ ΝΧ>Ν〇2 1.39 0.34 71 200805362 化合物 n k 103 fV\\ ch3 〇2N〇=n CnC^-Nch3 1.36 0.33 104 〇2Nib^>〇 "Ο^Ν〇2 1.37 0.25 105 ^-νΛνη3Ρ+ nc^\n ηΛ=Λ 匕.'❸0 h3c 0=<^νΡ^ nO^cn 1.41 0.29 106 H3Vd Ν0^ν (i MX) oV^0 M H3CCH3 XN° 1.46 0.32 第1圖顯示範例10化合物固體層複合折射率之實數部 分(η)。第2圖顯示範例10化合物固體層複合折射率之虛數部 分(k)。第3圖顯示範例10化合物固體層之吸收光譜。 光穩定性係以經校正之氤燈(Hanau)決定。範例7至106 之所有化合物之lmax吸收相對降低值-D24,在UV照光24小 時後,皆相當低。 氣教: 0.95g之範例41化合物係溶於99g之2,2,3,3-四敦内醇中,並經0·2 pmTeflonTM過濾器過濾。染料溶液之 72 200805362 後以400 r.p.m•速度施加至〇.6mm厚,具溝槽之聚碳酸酯光 碟表面上(溝槽深度49 nm,溝槽寬度215 nm,執距4〇〇 nm) ’具有直徑120 mm。過量之溶液係以增加旋轉速率至 4()()〇Γ·ρ·ηι·而旋轉出。當溶劑揮發後,染料維持均勻、非晶 5 i固體層形式,特徵為光學密度為0.60。乾燥係於7〇。〇空 氣循環烘箱中進行20分鐘。在真空塗佈裝置中,12〇 nm厚 之銀層以濺鍍塗佈施加至記錄層上。UV-可固化光聚合物 (XD4760™,Huntsman)之黏著層係以旋轉塗佈方式施加於 其上,第二聚碳酸酯光碟(0.6 mm厚,直徑120 mm)係黏附 10 鍵結於其上。於市售測試裝置上(ODU-100〇tm,puistec Japan),使用雷射二極體,波長為405 nm,孔徑值為0.65, 標記係寫入活化層,速度為6.61 m.s-1。之後於同一裝置上 進行讀取,藉由施加讀取功率0.4 mW,之後決定動力學參 數:最佳紀錄功率、反射度、I11/I11H調製、2T-11T訊號不 15 對稱性、CNR訊號對雜訊比、多執道PRSNR (Partial Response Signal to Noise Ratio)。 範例108-115 :係使用如範例107之相同流程,不同處 為範例10、12、13、15、37、38與63 (同時較佳為範例65、 66、73、74、76、83、89、90、91、92、94、95、96、98、 20 99、1〇〇、1〇1、1〇2、103與106)之化合物,係用於取代範 例41之化合物。範例1〇7至115之所有測試結果係摘錄於下 表: 73 200805362 域 荽 Φ ί 壤 鵰 ♦ 翁 屢 ffl S Z u -——^ § 00 107 41 0.60 9.0 17.4 27.5 0.37 0.02 45.6 12.89 108 10 0.53 7.0 11.6 21.6 0.47 0.09 37.4 109 12 0.53 8.0 13.1 24.0 0.45 -0.11 45.4 16.51 110 13 0.53 9.0 16.3 26.3 0.38 -0.01 49.1 17.24 111 15 0.59 8.0 15.1 27.8 0.46 0.02 46.2 18.14 112 35 0.52 8.0 9.7 21.3 0.54 -0.01 49.4 — , 31.60 113 37 0.49 8.0 13.1 24.4 0.46 0.02 48.3 ----- 28.35 114 38 0.58 9.0 15.5 26.4 0.41 0.03 47.1 15.30 115 63 0.54 8.0 14.4 24.0 0.40 0.02 46.7 15.08 该記錄特性十分良好,且完全符合HD DVD_RTM格式之 規範。最小標記(2T)可精準地寫入與偵測,產生特佳(近乎 零)之不對稱性。 5 細116 :在真空塗佈裝置中(CDF™,Balzers),5〇 厚之銀反射層係施加於1.1 mm厚之具溝槽聚碳酸酯光碟上 (直徑120 mm,溝槽執距320 nm,溝槽深度21 rnn,溝槽寬 度150 nm)。2g之範例10化合物係溶於100g之2,2,3,3,氣丙 醇中,並經0.2 μπι Teflon過濾器過濾。染料溶液係以旋轉 10 塗佈法施加至反射層上,以形成均勻之固體薄膜,於7〇。 烘箱中乾燥15分鐘後,於560 nm波長下具備有效ϋ及收 〇·59,減去銀層本身之吸收後。40 nm厚之介電層(Si〇N)係 於真空塗佈裝置(SDS131™,Balzers)中,以RF-濺鍍連續施 74 200805362 加。最後,以壓力感應黏著劑(Lintec,100 μχη總厚度)覆蓋 於一側之聚碳酸酯薄膜,係連結於介電層上。使用市售光 碟測試裝置(ODU_1〇〇〇tm 加 Blu-ray® Disc,Pulstec, Japan),具有407 nm雷射二極體,以及物鏡孔徑值〇·85,標 5 6己係冗錄於光碟上’具有線性速度5.28 m/s,以及雷射功率 7_1 mW。未經紀錄與經紀錄面積之後讀取,以〇.35 mW雷 射功率,並測量訊號參數:讀取前反射度=14% ;紀錄標記 上測量之反射度(8T長度)= 2.9%,顯示高至低之訊號極性; 調製I8pp/I8H = 0.78; CNR = 52.8 dB;串訊(crosstalk) = 28·3 10 dB。 範例117 :以類似於範例107之流程進行,不同處為範 例15 (n4〇5nm=1.24 / k4〇5nm= 0.33)之化合物,係用於取代範例 41之化合物’且溝槽深度為6〇 nm,而非49 nm。 翻_118 : 0·Μ之範例15化合物係溶於99.2 g之2,2,3,3-15四氟丙醇中,並經〇·2 μηι Teflon™過濾器過濾。之後以400 r.p.m.速率施加染料溶液至具〇·58 mm厚之溝槽之聚碳酸酯 光碟(溝槽深度75 nm,溝槽寬度i87mn,執距400 nm),直 徑為120 mm之表面上。過量溶液係旋轉出,藉由增加旋轉 速率至4000 r.p.m.。當溶劑揮發後,染料維持於第一均勻、 20非晶形固體層中,特徵為518 nm之光學密度為0.58。乾燥 係於70°C空氣循環烘箱中進行20分鐘。在真空-塗佈裝置中 (Twister™,Balzers Unaxis),7 nm厚之半透明銀層係施加至 該紀錄層上,以濺鍍塗佈方式。透明之UV-可固化光聚合物 (573TM,Eques)之後以旋轉塗佈方式施加於其上,第二具溝 75 200805362 槽光碟(得自 Zeonor™ (Nippon Zeon),厚度0.6 mm,直徑 120 mm’溝槽深度81nm,溝槽寬度233 nm,執距400 nm)係鍵 結於其上,具溝槽表面係面向該光聚合物。該光聚合物於 1^^光下固化,形成25 μπι厚之固體透明層。ZeonorTM基板 5 之後機械式地自原光碟上分離出並丟棄。第二染料溶液係 使用範例37之化合物製備,lg之該化合物係溶於99g之 2,2,3,3-四氟丙醇中。在新生成之聚合物具溝槽表面上,第 二染料溶液係以旋轉塗佈方式施加,因而獲得一第二均 勻、非晶形固體層,於551 nm具有光學密度0.45,在空氣 10 循環烘箱中乾燥後,如同第一層。120 nm厚之銀層之後以 濺度塗佈方式施加至該第二紀錄層上,於半透明層所使用 之相同真空塗佈裝置中。UV-可固化光聚合物黏著層 (XD482〇tm,Huntsman)之後以旋轉塗佈方式施加於其上,第 二仿製聚碳酸自旨光碟(厚度0.6 mm,直徑120 mm)係黏附於 15 其上。 在市售光碟測試裝置(ODU-1000™,puistec Japan)上, 使用波長為405 nm,孔徑為0.65之雷射二極體,標記係寫 入第一與第二活化層,速度為6.61 mi1。之後於同一裝置 上進行讀取,藉由施加讀取功率0.6 mW,之後決定動力學 2〇 參數··最佳紀錄功率、讀取後反射度、II1/111H調製、2T-11T 訊號不對稱性、CNR訊號對雜訊比、多軌道PRSNR。測試 結果摘錄於下表中: 76 200805362 普 νέιΙΙΓ ϋ r-H HH r-H ST HSl RK- 1 u g 00 PM 碎N 1 15 0.58 8.0 2.4 4.5 0.47 0.01 44.8 5.3 2 37 0.45 12.0 3.4 5.2 0.35 0.10 44.0 3.0 二層之紀錄特性皆相當良好。在此二染料組中,可使 雙層光碟達到反射度與敏感度皆符合雙層HDDVD-RTM格 式之規範。 範例119 (比較例):如同範例117所進行,為一不同處 為範例15之化合物係以具下式之化合物取代(EP-1587092 與 EP-1587093 之式 1 化合物;n4〇5nm= 1.48 / k4〇5nm= 0.29):NO 2 1.37 0.28 68 200805362 Compound nk 86 h5c2^Pci 0=Onn=<n SAN〇2 87 〇2NTSvn °k>nnv SAN〇2 1.32 0.24 88 :5>^r) 5〇- 〇^nn>! SAN 〇2 1.32 0.21 89 〇ch3 〇2Nys>_N -43⁄4 A〇n^0 Cl h2^ci sn〇2 1.37 0.37 90 o2n s ^i0CV idO0 hAch3 N"s^n〇2 1.40 0.36 91 h3c h3c + °2nts / n'nM/N^ n"/Nv=^〇0=〇N)lsn〇2 1.44 0.41 69 200805362 Compound nk 92 H3c, h3c+ °2nysv 0~t〇” Wonderful. H3C〇0=ONn gas, SAN〇2 1.43 0.35 93 €rx^^: 3〇· h3〇nJ sn〇2 1.53 0.20 94 0^CH3 [S>-.N η3γ:〇η3 0=c=nn=&lt ;snj 1.47 0.33 95 〇^CH3 H3C CH3 tH3N=<S^ 1.46 0.33 96 〕 remaining. CH3 S^N〇2 1.40 0.32 97 HsCr^vV h3^ + 〇2N々nn=〇0 hAch3 n\>no2 1.46 0.19 70 200805362 Compound η k 98 PH3 rN+ Π VN^N ch3 N- 02ν〇=ν 〇 Ν\ ,Ν=〇"0 _ O^N〇l , ^\ h3c + νη(^ν 3ν+ Η W ΝΚ,1 h3c 2 1.39 0.30 99 F3C-N^>NH3CN; ,] 〇:\coNi&gt ;0 h3c ~O^N02 1.36 0.31 100 h2n general n,, h3Cn+ 〇心ΝΛ^ ρΛ〇-ΐ>° h3c 〇Κ>ν^Χν^ Ν"Ο~Ν02 1.33 0.34 101 Η 0^ch3 02ν-〇^ ν Ν\ J〇〇Λ〇Ν^° 〇 κ h3c ch3 νΧ>νο2 1.46 0.33 102 H3C, H3P+ 02Ν Μ'ΝΗΧί 〇\〇Ν^>° W H3C^^ ,\心. — ^ ΝΧ>Ν 〇2 1.39 0.34 71 200805362 Compound nk 103 fV\\ ch3 〇2N〇=n CnC^-Nch3 1.36 0.33 104 〇2Nib^>〇"Ο^Ν〇2 1.37 0.25 105 ^-νΛνη3Ρ+ nc^\n ηΛ =Λ 匕.'❸0 h3c 0=<^νΡ^ nO^cn 1.41 0.29 106 H3Vd Ν0^ν (i MX) oV^0 M H3CCH3 XN° 1.46 0.32 Figure 1 shows the composite refractive index of the solid layer of the compound of Example 10. Real part (η). Figure 2 shows the imaginary part of the composite refractive index of the solid layer of the compound of Example 10 (k) Figure 3 shows the absorption spectrum of the solid layer of the compound of Example 10. The light stability is determined by a calibrated xenon lamp (Hanau). The relative decrease in lmax absorption of all compounds of Examples 7 to 106 - D24, after 24 hours of UV illumination It is quite low. Qijiao: 0.95g of the compound of Example 41 is dissolved in 99g of 2,2,3,3-tetradungol and filtered through a 0.22 pm TeflonTM filter. The dye solution is 72 200805362 400 rpm • Velocity applied to a 〇.6mm thick, grooved polycarbonate disc surface (groove depth 49 nm, groove width 215 nm, distance 4 〇〇 nm) 'has a diameter of 120 mm. The excess solution is rotated by increasing the rate of rotation to 4 () () 〇Γ · ρ · ηι·. When the solvent evaporates, the dye maintains a uniform, amorphous 5 i solid layer form characterized by an optical density of 0.60. Drying is at 7 〇. The air circulation oven was operated for 20 minutes. In the vacuum coating apparatus, a 12 Å thick silver layer was applied to the recording layer by sputtering coating. The adhesive layer of the UV-curable photopolymer (XD4760TM, Huntsman) is applied to it by spin coating, and the second polycarbonate disc (0.6 mm thick, 120 mm in diameter) is adhered to the 10 bond. . On a commercially available test apparatus (ODU-100〇tm, puistec Japan), a laser diode was used, the wavelength was 405 nm, the aperture value was 0.65, and the mark was written into the active layer at a speed of 6.61 m.s-1. Then read on the same device, by applying a reading power of 0.4 mW, and then determine the kinetic parameters: optimal recording power, reflectivity, I11/I11H modulation, 2T-11T signal not 15 symmetry, CNR signal pairing Multi-channel PRSNR (Partial Response Signal to Noise Ratio). Examples 108-115: The same procedure as in Example 107 is used, with the exceptions of Examples 10, 12, 13, 15, 37, 38, and 63 (simultaneously preferred Examples 65, 66, 73, 74, 76, 83, 89) Compounds of 90, 91, 92, 94, 95, 96, 98, 20 99, 1 〇〇, 1 〇 1, 1 〇 2, 103 and 106) are used to replace the compound of Example 41. All test results of Examples 1〇7 to 115 are extracted from the following table: 73 200805362 Domain 荽Φ ί Soil Carving ♦ Weng Duan ffl SZ u -——^ § 00 107 41 0.60 9.0 17.4 27.5 0.37 0.02 45.6 12.89 108 10 0.53 7.0 11.6 21.6 0.47 0.09 37.4 109 12 0.53 8.0 13.1 24.0 0.45 -0.11 45.4 16.51 110 13 0.53 9.0 16.3 26.3 0.38 -0.01 49.1 17.24 111 15 0.59 8.0 15.1 27.8 0.46 0.02 46.2 18.14 112 35 0.52 8.0 9.7 21.3 0.54 -0.01 49.4 — , 31.60 113 37 0.49 8.0 13.1 24.4 0.46 0.02 48.3 ----- 28.35 114 38 0.58 9.0 15.5 26.4 0.41 0.03 47.1 15.30 115 63 0.54 8.0 14.4 24.0 0.40 0.02 46.7 15.08 The recording characteristics are very good and fully comply with the specifications of the HD DVD_RTM format. The minimum mark (2T) is accurately written and detected, resulting in a very good (nearly zero) asymmetry. 5 Thin 116: In a vacuum coating unit (CDFTM, Balzers), a 5 〇 thick silver reflective layer is applied to a 1.1 mm thick grooved polycarbonate disc (120 mm diameter, grooved distance 320 nm) , groove depth 21 rnn, groove width 150 nm). 2 g of the Example 10 compound was dissolved in 100 g of 2, 2, 3, 3, air-propanol and filtered through a 0.2 μm Teflon filter. The dye solution was applied to the reflective layer by a spin coating method to form a uniform solid film at 7 Torr. After drying in an oven for 15 minutes, it has an effective enthalpy and hydration at 560 nm, minus the absorption of the silver layer itself. A 40 nm thick dielectric layer (Si〇N) was applied in a vacuum coating unit (SDS131TM, Balzers) with continuous application of RF-sputtering 74 200805362. Finally, a polycarbonate film covering one side with a pressure-sensitive adhesive (Lintec, 100 μχη total thickness) was attached to the dielectric layer. Using a commercially available optical disc tester (ODU_1〇〇〇tm plus Blu-ray® Disc, Pulstec, Japan) with a 407 nm laser diode and an objective lens aperture value of 8585, the standard is fully recorded on the disc. The upper 'has a linear speed of 5.28 m/s and a laser power of 7_1 mW. After reading and unrecorded area, read 雷.35 mW laser power and measure signal parameters: pre-reading reflectance = 14%; reflectance measured on record mark (8T length) = 2.9%, display High to low signal polarity; modulation I8pp/I8H = 0.78; CNR = 52.8 dB; crosstalk = 28·3 10 dB. Example 117: A procedure similar to that of Example 107 was carried out, except that the compound of Example 15 (n4 〇 5 nm = 1.24 / k4 〇 5 nm = 0.33) was used to replace the compound of Example 41 and the groove depth was 6 〇 nm. , not 49 nm. The compound of Example 15 was dissolved in 99.2 g of 2,2,3,3-15 tetrafluoropropanol and filtered through a 〇·2 μηι TeflonTM filter. The dye solution was then applied at a rate of 400 r.p.m. to a polycarbonate disc with a groove of 58 mm thick (groove depth 75 nm, groove width i87mn, distance 400 nm) on a 120 mm diameter surface. The excess solution was spun out by increasing the rate of rotation to 4000 r.p.m. After evaporation of the solvent, the dye was maintained in a first uniform, 20 amorphous solid layer characterized by an optical density of 0.58 at 518 nm. Drying was carried out in a 70 ° C air circulating oven for 20 minutes. In a vacuum-coated apparatus (TwisterTM, Balzers Unaxis), a 7 nm thick translucent silver layer was applied to the recording layer in a sputter coating manner. Transparent UV-curable photopolymer (573TM, Eques) is applied to it by spin coating, second groove 75 200805362 grooved disc (from ZeonorTM (Nippon Zeon), thickness 0.6 mm, diameter 120 mm A 'trench depth of 81 nm, a groove width of 233 nm, a pitch of 400 nm) is bonded thereto, with a grooved surface facing the photopolymer. The photopolymer is cured under light to form a solid transparent layer of 25 μm thick. The ZeonorTM substrate 5 is then mechanically separated from the original disc and discarded. The second dye solution was prepared using the compound of Example 37, and the compound of lg was dissolved in 99 g of 2,2,3,3-tetrafluoropropanol. On the newly formed polymer grooved surface, the second dye solution was applied by spin coating, thereby obtaining a second uniform, amorphous solid layer having an optical density of 0.45 at 551 nm in an air 10 cycle oven. After drying, it is like the first layer. A 120 nm thick layer of silver is then applied to the second recording layer by smear coating in the same vacuum coating apparatus used for the translucent layer. The UV-curable photopolymer adhesive layer (XD482〇tm, Huntsman) is applied to it by spin coating, and the second imitation polycarbonate is adhered to 15 from the optical disc (thickness 0.6 mm, diameter 120 mm). . On a commercially available optical disc tester (ODU-1000TM, puistec Japan), a laser diode having a wavelength of 405 nm and a pore diameter of 0.65 was used, and the marks were written into the first and second active layers at a speed of 6.61 mi1. Then read on the same device, by applying a reading power of 0.6 mW, and then determining the dynamics 2〇 parameter··the best recording power, the post-reading reflectance, the II1/111H modulation, and the 2T-11T signal asymmetry. , CNR signal to noise ratio, multi-track PRSNR. The test results are summarized in the following table: 76 200805362 普νέιΙΙΓ ϋ rH HH rH ST HSl RK- 1 ug 00 PM Broken N 1 15 0.58 8.0 2.4 4.5 0.47 0.01 44.8 5.3 2 37 0.45 12.0 3.4 5.2 0.35 0.10 44.0 3.0 Second floor record The features are quite good. In this two dye set, the reflectivity and sensitivity of the two-layer disc can be adjusted to the specifications of the dual-layer HDDVD-RTM format. Example 119 (Comparative Example): As in Example 117, a compound of Example 15 is substituted with a compound of the formula (EP-1587092 and EP-1587093, compound 1; n4〇5nm = 1.48 / k4) 〇5nm= 0.29):

範例117與119之測試結果摘錄於下表: 1 铷S 翁 Κ HH w Hid Λ ^ SK- 1 u 00 Ph 从N Pi w 117 15 0.60 8.0 14.5 26.6 0.45 0.03 48.7 19.84 6·10-6 119 (Π) 0.59 9.0 11.9 17.5 0.32 -0.04 43.4 8.74 5.1〇-3 77 200805362 含有式(II)比較化合物之紀錄媒體具有過低之調製、 PRSNR與SbER,皆不符合HD DVD-Rtm規範,即使是經過 溝槽幾何最佳化之後。 IL例120 (比較例):以類似於範例117之流程進行,不 5同處為式(11)化合物係經下式化合物取代(11405^ = 1·30/ ^405ηηι ^ 0.25) ·The test results of Examples 117 and 119 are summarized in the following table: 1 铷S 翁Κ HH w Hid Λ ^ SK- 1 u 00 Ph from N Pi w 117 15 0.60 8.0 14.5 26.6 0.45 0.03 48.7 19.84 6·10-6 119 (Π ) 0.59 9.0 11.9 17.5 0.32 -0.04 43.4 8.74 5.1〇-3 77 200805362 The recording medium containing the comparative compound of formula (II) has too low modulation, PRSNR and SbER, which are not in compliance with the HD DVD-Rtm specification, even if it is grooved. After the geometry is optimized. IL Example 120 (Comparative Example): A procedure similar to that of Example 117 was carried out, except that the compound of the formula (11) was substituted with a compound of the formula (11405^ = 1·30/^405ηηι ^ 0.25).

(III) 〇(III) 〇

10 該紀錄媒體具有非常低之調製,以及非常強之訊號不 對稱性,導致無法測量之CNR、PRSN_SbE]m號。 比較範例119與120清楚地顯示陽離子之選擇如同陰離 =般重要。良好之結果僅獲得於式⑴化合物之示範性陽 離子與陰離子之組合。 【闺式簡單說明】 15 第1圖顯示範例10化合物固體層複合折射率之實數部分⑻。 ^2圖顯示範例10化合物固體層複合折射率之虛數部分⑻。 第3圖顯示範例10化合物固體層之吸收光譜。 【主要元件符號說明】 (無) 7810 The recording medium has very low modulation and very strong signal asymmetry, resulting in unmeasurable CNR, PRSN_SbE]m. Comparative Examples 119 and 120 clearly show that the choice of cations is as important as the yin =. A good result is obtained only from the combination of exemplary cations and anions of the compound of formula (1). [Simple description] 15 Figure 1 shows the real part (8) of the composite refractive index of the solid layer of the compound of Example 10. The ^2 plot shows the imaginary part of the composite refractive index of the solid layer of the compound of Example 10 (8). Figure 3 shows the absorption spectra of the solid layer of the compound of Example 10. [Main component symbol description] (none) 78

Claims (1)

200805362 十、申請專利範圍· 1· 一種光學紀錄媒體’適用於以低於600 nm,較佳自350 至500 nm之雷射進行光學紀錄,包含一有溝槽之基板、 一反射層’以及一纟己錄軌道,寬度為1⑻至400 nm,較 5 佳自150至250 nm,深度為10至200 nm,較佳自20至90 nm,軌距(pitch)為 250至430 nm,較佳自 310至 399.9 nm,其中該記錄執道包含一具下式之化合物200805362 X. Patent application scope · 1· An optical recording medium 'for optical recording with lasers below 600 nm, preferably from 350 to 500 nm, including a grooved substrate, a reflective layer' and a纟 recorded track, width 1 (8) to 400 nm, better than 5 from 150 to 250 nm, depth 10 to 200 nm, preferably from 20 to 90 nm, pitch is 250 to 430 nm, preferably from 310 to 399.9 nm, wherein the record contains a compound of the formula 或其内消旋物或互變物形式,其中 10 Mi為一氧化態為+3之金屬陽離子、羥基或鹵素金屬 基團,其中該金屬之氧化態為+4,或氧合金屬基團,其 中該金屬之氧化態為+5 ; Zi為具η個正電之陽離子,其碘鹽具有UV-Α或可見 光範圍之吸收帶,其吸收最大值係位於波長350至550 15 nm處,其中該陽離子係選自於由下式陽離子組成之族 群: R1。 R〇 Λ R17 Rl0rf Λ ^22 闩21 % R11 ^12 尺13 H Rl4 ^R16 Rl5 -r R12 R*I3 Rl9 ^~R2〇 Rl5 79 200805362Or a meso or tautomer thereof, wherein 10 Mi is a metal cation, hydroxyl or halogen metal group having an oxidation state of +3, wherein the metal has an oxidation state of +4, or an oxygenated metal group, Wherein the oxidation state of the metal is +5; Zi is a cation having n positive charges, and the iodide salt has an absorption band in the range of UV-Α or visible light, and the absorption maximum is at a wavelength of 350 to 550 15 nm, wherein The cation is selected from the group consisting of cations of the formula: R1. R〇 Λ R17 Rl0rf Λ ^22 Latch 21 % R11 ^12 Ruler 13 H Rl4 ^R16 Rl5 -r R12 R*I3 Rl9 ^~R2〇 Rl5 79 200805362 13 R13 R 4 及 R 14 ; 80 2008053624 and R 14 ; 80 200805362 N NyN-- Q R R 46 R 46 R, 14 45 , R45 Q N 。,或 b「4N: ·-<^Ί C G. R14 R15N NyN-- Q R R 46 R 46 R, 14 45 , R45 Q N . , or b "4N: ·-<^Ί C G. R14 R15 ?17或C2-C8未經取代,或經R47、r48、r49及 心〇單-或多取代之雜芳基; Ql與Q6每—者皆獨立地為〇或S ; q^q4每-者g 獨立地為〇、S_R51;Q3為N或CR52;Q^N,或為CRi4 當Q4為0或S時;Q7為〇、s、⑶如或皿35 ; 每一者皆獨立地為CR*、0、S或撤55 ; q9為CRJ 10 N,Qu為CR56或N,Qi2、q14與Q16每一者皆獨立地為 CR57R58、〇、s或nrs1 ; (^^與仏5每一者皆獨立地為CR5 4N; Ri ' R3、R4、R5、117與乂8每一者皆獨立地為H、齒 素、OR6〇、SR6〇、NR41R55、NR55COR61、〇SiR55R61R62、 COR55、CR55〇R61〇R62、n〇2、CN、COOR60、CONR63R64、 so2r55、so2nr63r64、so3R63; CrC6烷基、C2-C6烯基、 C2-C6块基、C3-C6環燒基、C3-C6環烯基,或C2-C5雜環 81 15 200805362 烧基,每-者皆未經取代或經卣素單或多取代;或C7_Cn 芳烷基、C6-C1G芳基,或Cl_c8雜芳基,每一者皆未經取 代’或經(^-(:4烷基、鹵素、〇R6〇、SR6〇、NR4iR55、c〇R55、 N〇2、CN及/或COOCVC4燒基單·或多_取代; R2及 / 或R6為 〇、S 或NR65 ; K9' n1()' Hu ' n12' R14、Ri5、Ri6、Ri7、Ri8、R38、 R39、R4〇、R44、R45、R46、r47、r48、r49、R5〇、r52 與 r59, 每一者皆獨立地為H、鹵素、〇R66、Sr66、NR5iR67、 NR51COR68、NR51COOR69、NR5lCONR69R7G、Nr5iCN、 〇SiR51R68R71、COR51、CR51〇R68〇R71、N02、CN、 coor66、CONR69R70、S02R51、s〇2NR69R70、S03R69 ; CrC6烷基、C2-C6烯基、CVC6炔基、c3-c6環烷基、c3-c6 環烯基或C2_C5雜環烧基,每一者皆未經取代,或經鹵 素、OR66、SR66、nr51r67、nr51cor68、NR51CO〇R66、 nr51conr69r70、NR51CN、COR51、CR51OR68OR71、no2、 CN、COOR66、CONR69R70及/或SO2R69單-或多-取代; 或者’ C7-C11方烧基、C6_Ci〇芳基或Ci_Cs雜芳基,每一 者皆未經取代’或經C1-C4烧基、鹵素、〇R66、sr66、 nr51r67、cor51、N〇2、CN及/或COOCVC4烷基單或多 -取代; R13與R35每一者皆獨立地為Ci_C2〇烧基、C3-C12環燒 基、CVC12雜環烷基、c2-c20烯基、〇3-0:12環烯基、C4-CI2 雜環烯基、CVCm炔基、CVC】8芳烷基、crc9雜芳基、 c2-c17雜芳烷基、c6-c12芳基,或crc12烷基,插入一至 82 200805362 五個不連續之氧及/或硫原子,及/或插入一至五個與 nr51相等或不同之基團,每一者皆未經取代或經鹵素、 OR%、SR66、NR51R67、NR51COR68、NR51COOR69、 NR51CONR69R70 x NR51CN x OS1R51R68R71 ^ COR$i λ 5 CR510R680R71、Ν02、CN、COOR66、CONR69R70、S02R51、 SO2NR69R70、S03R69單或多取代; Ri9、R20與R21每一者皆獨立地為Η、鹵素、〇R66、 SR66、OSiR51R68R71、CR51OR68OR71 ; Crc6烷基、C2-C6 烯基、C2-C6炔基、C3-C6環烷基、〇3-(:6環烯基或c2-c5 10 雜環烷基,每一者皆未經取代,或經i素、OR66、SR66、 NR51R67、NR5iCOR68、NR51COOR66、NR51CONR69R7〇、 NR51CN、COR51、CR51OR68OR71、N02、CN、COOR66、 CONR69R70及/或S02R6單或多-取代;或c7-cn芳烷基、 C6-C1G芳基或Ci-Cs雜芳基,每一者皆未經取代,或經 15 C1-C4烧基、_ 素、OR66、SR66、NR51R67、COR51 及/或 COOC1-C4烧基單-或多-取代; R22與R23每一者皆獨立地為CrC12烧基、c2-C12浠 基、c2-c12:^ 基、〇7-(:12芳烧基、(:3-€12環烧基、c3-c12 環烯基,或C2-Cu雜環烷基,每一者皆未經取代,或經 2〇 鹵素、〇以66、SR%、NR51R67、NR51COR68、NR51COOR66、 NR51CONR69R70、NR51CN、COR51、CR51OR68〇R71、N02、 CN、COORm、CONR69R70及/或 SO2R69 單-或多-取代; 或者’ R22與R23共同為C2-Ci2亞烧基、C2-C12亞稀 基、C2_Ci2環亞烷基,或〇2-〇:12環亞烯基,其中一至五 83 200805362 個不連續碳原子可被氧及/或硫原子,及/或與nr51、 。2-〇12亞烧基、〇2-〇:12亞稀基、〇2<12環亞烧基,或C2-C12 環亞烯基相同或不同之基團取代,每一者皆未經取代, 或經鹵素、OR66、SR66、NR51R67、NR51COR68、 5 NR51COOR66、NR51CONR69R7〇、NR51CN、COR51、 cr51or68or71、N02、CN、COOR66、conr69r70及 /或 S〇2R69單·或多-取代; R24、R25、R27、R28、R29、R30、R31 與 R32 ’ 每一者 皆獨立地為Η、鹵素、COR51、N02、CN、S03R69 ;或 10 Crc6烷基、c6-c12芳基、c7-c12芳烷基,每一者皆未經 取代,或經鹵素、CrCs烷基,及/或S03R69單·或多-取代; R26 為鹵素、COOR66、CONR69R70 ;或 C1-C20烧基、 C7-Ci8芳烧基,每一者皆未經取代,或經_素、CrC8 烷基、COR51、COOR66、CONR69R70、OR66、CN,及/ 15 或so3r69單-或多-取代; R33 為 Ci_Ci2 烧基、C2-C12 稀基、C2-C12:fe^基、C7-C12 芳烧基、C^-Ci2環烧基、CVCu環稀基,或C2-Cu雜環烧 基,每一者皆未經取代,或經鹵素、〇R66、SR66、NR51R67、 nr51cor68、nr51coor66、nr51conr69r70、nr51cn、 20 cor51、CR51OR68OR71、N02、CN、C〇OR66、conr69r70, 及/或S02R69單-或多-取代; 或者,Rh與R33共同與氮及碳原子結合,形成一5-或6-元環; R34為Η、CH3或,每一者皆未經取代,或經_ 84 200805362 素、OR60、SR60或NR41R55早-或多-取代; R36與R37每一者皆獨立地為Η ; CrC12烷基、c2-c12 烯基、C2-C12炔基、0:3<12環烷基、C3-C12環烯基,或CVCn 雜環烷基,每一者皆未經取代,或經鹵素、〇R6Q、SR6Q 5 或NR41R55單-或多-取代;或CVCid烷基、c6-c10芳基 或Crc8雜芳基,每一者皆未經取代,或經crc4烷基、 鹵素、OR60、SR60、NR41R55、COR55、N02、CN,及/ 或C00CrC4烷基單-或多-取代; R4I、R63、尺64、R67、R69與R70每一者皆獨立地為Η ; ίο Ci-c6烧基、C2-C6烯基、C2-C6快基、C3-C6 環烧基、C3-C6 %細基’或C2-C5雜環烧基’每一者皆未經取代,或經 鹵素、OR72、SR72、NR55R62、CN及/或 COOR55單-或多-取代;或(36<1()芳基、C7-Cu芳烷基或^-匕雜芳基,每 一者皆未經取代,或經CrC4烷基、鹵素、OR72、sr72、 15 nr55r61、cor55、CR55OR61OR62、N02、CN及/或 COOR62 單-或多-取代; 或NR63R64及/或NR69R7G為五-或六-元雜環’其更可 包含一N或Ο原子,且其可經由甲基及/或乙基單-或多-取代; 20 R42、R43與R56每一者皆獨立地為η、鹵素、OR60、 SR6〇 、NR41R55 、NR55COR6i 、NR55COOR63 、 NR55CONR63R64、NR55CN、OSiR55R61R62、COR55、 CR55OR61OR62、N02、CN、COOR60、CONR63R64、S02R55、 S02NR63R64、S03R63、PO(OR55)(OR61); cvc6烷基、c2-c6 85 200805362 晞基、CrC6炔基、CrC6環烧基、crC6環烯基,或c2_c5 雜環烷基,每一者皆未經取代,或經IS素、0R6Q、SR6Q、 NR41R55、NR55COR61、NR55COOR60、NR55CONR63R64、 nr55cn、COR55、CR55OR61OR62、N02、CN、COOR60、 5 CONR63R64,及/或S02R63單-或多-取代;4C7-Cu芳烧 基、C6-C1()芳基或CrC8雜芳基,每一I皆未經取代’或 經(^-(:4烧基、鹵素、〇R60、SR60、NR4iR55、cor55、 N〇2、CN及/或C〇OCrC4烷基單-或多-取代; 或一或更多配對R9與Ri〇、Rw與Ru、R"與R12、R14 10 與尺15、Rm與 R20、R14與 R21、R15與 Rl6、R15與 Rl9、Rl5 與 R20、Rl6與 Rl7、R16與 R52、R17與 Rl8、Rn與 R20、Rl7 與R21、Ri8與R33、R18與R52、R2〇與R52、R21 與R52、R24 與 R25、R27與 R28、R29 與 R30、R3〇與 H31、R31 與 R32、R39 與 R4G、R42與 R43、R42與 R56、R44與 R59 ’ 及/或 R47與 R48 ’17 or C2-C8 unsubstituted, or heteroaryl which is mono- or polysubstituted by R47, r48, r49 and palpitations; Ql and Q6 are each independently 〇 or S; q^q4 per- g is independently 〇, S_R51; Q3 is N or CR52; Q^N, or CRi4 when Q4 is 0 or S; Q7 is 〇, s, (3) such as or dish 35; each is independently CR* , 0, S or withdraw 55; q9 is CRJ 10 N, Qu is CR56 or N, and Qi2, q14 and Q16 are each independently CR57R58, 〇, s or nrs1; (^^ and 仏5 each Independently CR5 4N; Ri ' R3, R4, R5, 117 and 乂8 are each independently H, dentate, OR6〇, SR6〇, NR41R55, NR55COR61, 〇SiR55R61R62, COR55, CR55〇R61〇R62 , n〇2, CN, COOR60, CONR63R64, so2r55, so2nr63r64, so3R63; CrC6 alkyl, C2-C6 alkenyl, C2-C6 block, C3-C6 cycloalkyl, C3-C6 cycloalkenyl, or C2- C5 heterocyclic ring 81 15 200805362 alkyl, each unsubstituted or mono- or polysubstituted by alizarin; or C7_Cn aralkyl, C6-C1G aryl, or Cl_c8 heteroaryl, each unsubstituted 'or by (^-(:4 alkyl, halogen, 〇R6〇, SR6〇, NR4iR55, c〇R55, N〇2, C N and / or COOCVC4 alkyl group or more _ substitution; R2 and / or R6 is 〇, S or NR65; K9' n1 () ' Hu ' n12' R14, Ri5, Ri6, Ri7, Ri8, R38, R39, R4〇, R44, R45, R46, r47, r48, r49, R5〇, r52 and r59, each independently H, halogen, 〇R66, Sr66, NR5iR67, NR51COR68, NR51COOR69, NR5lCONR69R7G, Nr5iCN, 〇SiR51R68R71 , COR51, CR51〇R68〇R71, N02, CN, coor66, CONR69R70, S02R51, s〇2NR69R70, S03R69; CrC6 alkyl, C2-C6 alkenyl, CVC6 alkynyl, c3-c6 cycloalkyl, c3-c6 ring Alkenyl or C2_C5 heterocycloalkyl, each unsubstituted, or halogen, OR66, SR66, nr51r67, nr51cor68, NR51CO〇R66, nr51conr69r70, NR51CN, COR51, CR51OR68OR71, no2, CN, COOR66, CONR69R70 and / Or SO2R69 mono- or poly-substituted; or 'C7-C11 aryl, C6_Ci aryl or Ci_Cs heteroaryl, each unsubstituted' or via C1-C4 alkyl, halogen, hydrazine R66, sr66 , nr51r67, cor51, N〇2, CN and/or COOCVC4 alkyl single or multiple-substituted; R13 and R35 are each independently Ci_C2 fluorenyl, C3- C12 cycloalkyl, CVC12 heterocycloalkyl, c2-c20 alkenyl, 〇3-0:12 cycloalkenyl, C4-CI2 heterocycloalkenyl, CVCm alkynyl, CVC]8 aralkyl, crc9 heteroaryl , c2-c17 heteroarylalkyl, c6-c12 aryl, or crc12 alkyl, inserted one to 82 200805362 five discontinuous oxygen and/or sulfur atoms, and/or one to five inserted or equal to nr51 Groups, each unsubstituted or halogenated, OR%, SR66, NR51R67, NR51COR68, NR51COOR69, NR51CONR69R70 x NR51CN x OS1R51R68R71 ^ COR$i λ 5 CR510R680R71, Ν02, CN, COOR66, CONR69R70, S02R51, SO2NR69R70, S03R69 Single or multiple substitution; Ri9, R20 and R21 are each independently hydrazine, halogen, hydrazine R66, SR66, OSiR51R68R71, CR51OR68OR71; Crc6 alkyl, C2-C6 alkenyl, C2-C6 alkynyl, C3-C6 ring Alkyl, 〇3-(:6-cycloalkenyl or c2-c5 10 heterocycloalkyl, each unsubstituted, or via i, OR66, SR66, NR51R67, NR5iCOR68, NR51COOR66, NR51CONR69R7〇, NR51CN, COR51, CR51OR68OR71, N02, CN, COOR66, CONR69R70 and/or S02R6 single or multiple-substituted; or c7-cn aralkyl, C6-C1G Aryl or Ci-Cs heteroaryl, each unsubstituted, or mono- or poly- to 15 C1-C4 alkyl, _, OR66, SR66, NR51R67, COR51 and/or COOC1-C4 Substituting; R22 and R23 are each independently CrC12 alkyl, c2-C12 fluorenyl, c2-c12:^, 〇7-(:12 aryl, (: 3-€12 cyclyl, c3 a -c12 cycloalkenyl group, or a C2-Cu heterocycloalkyl group, each unsubstituted, or 2 〇 halogen, 〇 66, SR%, NR51R67, NR51COR68, NR51COOR66, NR51CONR69R70, NR51CN, COR51, CR51OR68〇 R71, N02, CN, COORm, CONR69R70 and/or SO2R69 mono- or poly-substituted; or 'R22 and R23 together are C2-Ci2 alkylene, C2-C12 sub-base, C2_Ci2 cycloalkylene, or 〇2 - 〇: 12 ring alkenylene, one to five 83 200805362 discontinuous carbon atoms can be oxygen and / or sulfur atoms, and / or with nr51,. 2-〇12 alkylene group, 〇2-〇: 12 linoleylene, 〇2<12 ring alkylene group, or C2-C12 cycloalkenylene group substituted with the same or different groups, each of which is unsubstituted , or mono- or poly-substituted by halogen, OR66, SR66, NR51R67, NR51COR68, 5 NR51COOR66, NR51CONR69R7〇, NR51CN, COR51, cr51or68or71, N02, CN, COOR66, conr69r70 and/or S〇2R69; R24, R25, R27 , R28, R29, R30, R31 and R32' are each independently hydrazine, halogen, COR51, N02, CN, S03R69; or 10 Crc6 alkyl, c6-c12 aryl, c7-c12 aralkyl, each Neither is unsubstituted or mono- or poly-substituted with halogen, CrCs alkyl, and/or S03R69; R26 is halogen, COOR66, CONR69R70; or C1-C20 alkyl, C7-Ci8 aryl, each They are unsubstituted or mono- or poly-substituted by _, CrC8 alkyl, COR51, COOR66, CONR69R70, OR66, CN, and / 15 or so3r69; R33 is Ci_Ci2 alkyl, C2-C12 dilute, C2 -C12: Fe^, C7-C12 aryl, C^-Ci2 cycloalkyl, CVCu ring, or C2-Cu heterocycloalkyl, each unsubstituted, or halogen, 〇R66 , SR 66, NR51R67, nr51cor68, nr51coor66, nr51conr69r70, nr51cn, 20 cor51, CR51OR68OR71, N02, CN, C〇OR66, conr69r70, and / or S02R69 mono- or poly-substituted; or, Rh and R33 together with nitrogen and carbon atoms Forming a 5- or 6-membered ring; R34 is deuterium, CH3 or each, unsubstituted, or early- or poly-substituted by _84 200805362, OR60, SR60 or NR41R55; each of R36 and R37 All of them are independently Cr; CrC12 alkyl, c2-c12 alkenyl, C2-C12 alkynyl, 0:3 <12 cycloalkyl, C3-C12 cycloalkenyl, or CVCn heterocycloalkyl, each Unsubstituted, or mono- or poly-substituted by halogen, hydrazine, R6Q, SR6Q 5 or NR41R55; or CVCid alkyl, c6-c10 aryl or Crc8 heteroaryl, each unsubstituted, or crc4 alkane a group of halogen, OR60, SR60, NR41R55, COR55, N02, CN, and/or C00CrC4 alkyl mono- or poly-substituted; R4I, R63, 64, R67, R69 and R70 are each independently hydrazine; Ίο Ci-c6 alkyl, C2-C6 alkenyl, C2-C6 fast radical, C3-C6 cycloalkyl, C3-C6 % fine radical or C2-C5 heterocyclic alkyl radical, each unsubstituted, Or halogen OR72, SR72, NR55R62, CN and/or COOR55 mono- or poly-substituted; or (36<1() aryl, C7-Cu aralkyl or ^-indole aryl, each unsubstituted, Or a mono- or poly-substituted group of CrC4 alkyl, halogen, OR72, sr72, 15 nr55r61, cor55, CR55OR61OR62, N02, CN and/or COOR62; or NR63R64 and/or NR69R7G is a five- or six-membered heterocyclic ring More preferably, it may contain an N or a ruthenium atom, and it may be mono- or poly-substituted via a methyl group and/or an ethyl group; 20 R42, R43 and R56 are each independently η, halogen, OR60, SR6〇, NR41R55 , NR55COR6i, NR55COOR63, NR55CONR63R64, NR55CN, OSiR55R61R62, COR55, CR55OR61OR62, N02, CN, COOR60, CONR63R64, S02R55, S02NR63R64, S03R63, PO(OR55)(OR61); cvc6 alkyl, c2-c6 85 200805362 sulfhydryl, CrC6 Alkynyl, CrC6 cycloalkyl, crC6 cycloalkenyl, or c2_c5 heterocycloalkyl, each unsubstituted, or via IS, 0R6Q, SR6Q, NR41R55, NR55COR61, NR55COOR60, NR55CONR63R64, nr55cn, COR55, CR55OR61OR62 , N02, CN, COOR60, 5 CONR63R64, and / or S02R63 single- or multi-substituted; 4C7-Cu Fang An alkyl group, a C6-C1()aryl group or a CrC8 heteroaryl group, each of which is unsubstituted or has a (^-(:4 alkyl group, halogen, hydrazine R60, SR60, NR4iR55, cor55, N〇2) CN and/or C〇OCrC4 alkyl mono- or poly-substituted; or one or more pairs R9 and Ri〇, Rw and Ru, R" and R12, R14 10 and rule 15, Rm and R20, R14 and R21, R15 and Rl6, R15 and Rl9, Rl5 and R20, Rl6 and Rl7, R16 and R52, R17 and Rl8, Rn and R20, Rl7 and R21, Ri8 and R33, R18 and R52, R2〇 and R52, R21 and R52, R24 And R25, R27 and R28, R29 and R30, R3〇 and H31, R31 and R32, R39 and R4G, R42 and R43, R42 and R56, R44 and R59' and/or R47 and R48' 這些配對互相獨立地與下式 價基團結合These pairs are independently linked to the lower valence group 因此與其鍵結之二相鄰碳原子形成苯、環己烯、環己二 烯、環戊二烯,或環戊烯環; Rsl、Rs5、‘、汉62、‘與r71每〆者皆獨立地為氫、 苄基;或口七4垸基、cvc4烯基、crc4炔基、[c2-c3亞 86 20 200805362 烧基_〇ϋ81,或[C2-C3亞烷基-NR82-]k_R81,每一者皆 未經取代’或經!|素單_或多_取代; 或nr51r67、Nr51r68、Nr41r55,及/或NR55R61 為五 或六兀雜環,其更包含一N或Ο原子,其可經甲基及/或 5 乙基單-或多-取代; R53、R54、H57與知每—者皆獨立地為Ci_Ci2烧基、 c2-c12烯基、c2_c12炔基、C7-Ci2芳烧基、C3-Ci^烷基、 C3-Cl2環烯基或C2-Cn雜環烷基,每一者皆未經取代, 或經 lS 素、〇r6。、Sr6。、NR41R55、NR55COR61、 10 NR55COOR6〇、NR55CONR63R64、NR55CN、COR55、 CR55〇R61〇R62、N02、CN、COOR6〇、CONR63R64及/或 S02R63單-或多-取代; 或R53與R54,及/或R57與R58共同形成C2_Cl2亞烷 基、CVC〗2亞烯基、c2_Cl2環亞烷基或C2-Ci2環亞烯基配 15 對,一至五個未連續碳原子可經氧及/或硫原子取代, 及/或與服55、CVC12S烧基、C2-C12S烯基、c2-c12環 亞烷基,或C2_C12環亞烯基相同或不同之基團取代,每 一者皆未經取代,或經鹵素、〇R60、SR60、NR41R55、 NR55COR61、NR55COOR60、NR55CONR63R64、NR55CN、 20 COR55、CR55OR61〇R62、N02、CN、coor60、conr63r64 及/或so2r63單-或多取代; 每一R6G或R66,獨立於任一其他r6G或r66,為R41或 R65 ; r65 為⑶r41、coor41、conr63r64、cn、so2nr63r64 87 200805362 或 SO2R63 ; R72,獨立於任一其他R72,每一者皆獨立地為CVC6 烷基、c2-6烯基、c2-c6炔基、c3-c6環烷基、c3-c6環烯 基,或c2-c5雜環烷基,每一者皆未經取代,或經鹵素、 5 nr55r62、cn及/或COOR55單-或多-取代;或c6-c10芳基、 c7-cu芳烷基或crc5雜芳基,每一者皆未經取代,或經 CrC4烷基、鹵素、NR55R61、COR55、CR55OR61OR62、 N02、CN及/或(:001162單-或多-取代; R73、R74、R75與R76每一者皆獨立地為Η、CrC4烷 10 基、鹵素、OR66、SR66、NR51R67、COR51、N〇2、CN, 或COOCVC4烷基; 或R73與R74、R74與R75 ’及/或R75與R76之一或多配Therefore, two adjacent carbon atoms bonded thereto form benzene, cyclohexene, cyclohexadiene, cyclopentadiene, or cyclopentene ring; Rsl, Rs5, ', Han 62, 'and r71 are independent of each other. The ground is hydrogen, benzyl; or sulphate, cvc4 alkenyl, crc4 alkynyl, [c2-c3 sub 86 20 200805362 alkyl 〇ϋ 81, or [C2-C3 alkylene-NR82-] k_R81, Each of which is unsubstituted or substituted with a single or multiple _; or nr51r67, Nr51r68, Nr41r55, and/or NR55R61 is a five or six fluorene heterocycle, which further comprises an N or a ruthenium atom, which may Methyl and/or 5 ethyl mono- or poly-substituted; R53, R54, H57 and each of them are independently Ci_Ci2 alkyl, c2-c12 alkenyl, c2_c12 alkynyl, C7-Ci2 arylalkyl , C3-Ci^alkyl, C3-Cl2 cycloalkenyl or C2-Cn heterocycloalkyl, each unsubstituted, or via lS, 〇r6. , Sr6. , NR41R55, NR55COR61, 10 NR55COOR6〇, NR55CONR63R64, NR55CN, COR55, CR55〇R61〇R62, N02, CN, COOR6〇, CONR63R64 and/or S02R63 single- or multi-substituted; or R53 and R54, and/or R57 R58 together form C2_Cl2 alkylene, CVC 2 alkenylene, c2_Cl2 cycloalkylene or C2-Ci2 cycloalkenylene with 15 pairs, one to five discontinuous carbon atoms may be substituted by oxygen and/or sulfur atoms, and / or substituted with the same or different groups of the service 55, CVC12S alkyl, C2-C12S alkenyl, c2-c12 cycloalkylene, or C2_C12 cycloalkenylene, each unsubstituted, or halogen, 〇R60, SR60, NR41R55, NR55COR61, NR55COOR60, NR55CONR63R64, NR55CN, 20 COR55, CR55OR61〇R62, N02, CN, coor60, conr63r64 and/or so2r63 single- or multi-substituted; each R6G or R66, independent of any other R6G or r66, R41 or R65; r65 is (3)r41, coor41, conr63r64, cn, so2nr63r64 87 200805362 or SO2R63; R72, independent of any other R72, each independently CVC6 alkyl, c2-6 alkenyl , c2-c6 alkynyl, c3-c6 cycloalkyl, c3-c6 cycloalkenyl, or c2-c5 Alkyl groups, each unsubstituted, or mono- or poly-substituted with halogen, 5 nr55r62, cn and/or COOR55; or c6-c10 aryl, c7-cu aralkyl or crc5 heteroaryl, each Neither is unsubstituted or independently by CrC4 alkyl, halogen, NR55R61, COR55, CR55OR61OR62, N02, CN and/or (: 001162 mono- or poly-substituted; R73, R74, R75 and R76 are each independently Is hydrazine, CrC4 alkane 10, halogen, OR66, SR66, NR51R67, COR51, N〇2, CN, or COOCVC4 alkyl; or R73 and R74, R74 and R75 ' and/or one or more of R75 and R76 對皆獨立地與 R86, R86, R86或 R86 結合,因此與其上鍵結之二相鄰碳原子形成苯,或部分 15 或完全飽和6-元環; R77、R78、1179與1180每一者皆獨立地為Η、CrC4烷 基、鹵素、OR66或 SR66,R73可與 R77形成一 3-、4-、5-或6-元環,R74可與R78形成3-、4-、5·或6-元環,R75可與 Rso形成3-、4-、5-或6-元壞’或R76可與R79形成3-、4-、 20 5-或 6-元 ί哀,或 R73 與 R77、R74與 R78、R75與 R79 ’ 或 R76 與118(),可與NR51、0或S結合; 尺81與1182每一者皆獨立地為曱基、乙基、乙烯基, 88 200805362 及/或烯丙基; R83、R84、R85與R86每—者皆獨立地為H、C1_C4烧 基、鹵素、OR66、SR66、NR51R67、c〇R5、N〇2、CN, 或COOCVC4烷基; 選自於由l、R3、R4、R5、r7、r8、R9、、Rn、 、R13、R14、R15、R16、Ri7、Ri8、Ri9、R2。、R21、 R22、R23、R24、R25、R26、R27、R28、R29、R3G、R3、 R32、R34、R35、R38、r39、R4〇、R41、R42、R43、R44、 R45、R46、R47、R48、r49、Rs。、Rsi、R53、R55、R56、 10 15 、R59、R6G、R61、r62、R63、R65、R66、R67、R68、 R69、R72、R73、r74、R75、R76、Rsi、Rs3 ϋ與 Rs6組成族群之每一相同或不同取代基,可具有一或多 们自由基’可與另-者鐽結成對,藉由直接鍵結,或經 由U-或-N(R82)橋鍵,選擇性地形成一化合物,其 包含式(I)之二或三個相同或不同片段; k為1、2、3或4之整數;4整數卜2或3。 2·如申請專利範圍第丨項之光學紀 /C::<1 錄媒體,其中 N_•及/ 或 二-c—N GThe pair is independently bonded to R86, R86, R86 or R86, so that two adjacent carbon atoms bonded to it form a benzene, or a partially 15 or fully saturated 6-membered ring; R77, R78, 1179 and 1180 each Independently ruthenium, CrC4 alkyl, halogen, OR66 or SR66, R73 can form a 3-, 4-, 5- or 6-membered ring with R77, and R74 can form 3-, 4-, 5- or 6 with R78. - a ring, R75 can form a 3-, 4-, 5- or 6-membered bad with Rso or R76 can form a 3-, 4-, 20 5- or 6-member with R79, or R73 and R77, R74 and R78, R75 and R79' or R76 and 118() may be combined with NR51, 0 or S; each of feet 81 and 1182 is independently fluorenyl, ethyl, vinyl, 88 200805362 and/or alkene Propyl; R83, R84, R85 and R86 are each independently H, C1_C4 alkyl, halogen, OR66, SR66, NR51R67, c〇R5, N〇2, CN, or COOCVC4 alkyl; l, R3, R4, R5, r7, r8, R9, Rn, R13, R14, R15, R16, Ri7, Ri8, Ri9, R2. , R21, R22, R23, R24, R25, R26, R27, R28, R29, R3G, R3, R32, R34, R35, R38, r39, R4〇, R41, R42, R43, R44, R45, R46, R47, R48, r49, Rs. , Rsi, R53, R55, R56, 10 15 , R59, R6G, R61, r62, R63, R65, R66, R67, R68, R69, R72, R73, r74, R75, R76, Rsi, Rs3 ϋ and Rs6 Each of the same or different substituents may have one or more radicals that may be paired with the other, selectively bonded by direct bonding, or via U- or -N(R82) bridges. a compound comprising two or three identical or different fragments of formula (I); k being an integer of 1, 2, 3 or 4; 4 integers 2 or 3. 2. For example, the optical disc /C::<1 recording media of the scope of the patent application, where N_• and / or di-c-N G 係獨立地為Independently 或R43 ,較佳為Or R43, preferably 89 200805362 3·如申請專利範圍第1或2項之光學紀錄媒體,其中R2及/ 或R6為Ο、S、N-CN或N_S02CF3,較佳為Ο。 4·如申請專利範圍第1、2或3項之光學紀錄媒體,其中R3 及/或R7為 Η、鹵素、N02、CN、COR55、COOR60、SO3R60、 5 NCO或SCN,較佳為Η。 5·如申請專利範圍第1、2、3或4項之光學紀錄媒體,其中 該雜環包含G14G2,至少一R42與R56,尤其是R42為CF3、 N02、CN、COR55、coor6〇、CR55OR61OR62、CONR63R64、 so2r55、so3r6〇、so2nr63r64,最佳為CF3、N02、CN、 10 COR55、coor60、so2r55,及/或 SO3R60,或R42與R56共 同為未經取代或經取代之丁二亞烯,較佳為未經取代, 或經CF3、N02、CN、COR55、COOR60,及/或 SO3R60取 代。 6·如申請專利範圍第1、2、3、4或5項之光學紀錄媒體, 15 其中該雜環包含G3,R58為Η或F,或與R44共同形成未經 取代或經取代之丁二亞烯,較佳為未經取代,或經一或 多個 Ci-C*烧基、鹵素、〇尺6〇、sr60、NR55R61、CF3、 N02、CN、cor55、coor6〇、so2r55,及/或 S03R6〇取代。 7.如申請專利範圍第卜2、3、4、5或6項之光學紀錄媒體, 20 其中 、As3+、Au3+、Bi3+、Ce3+、Co3+、Cr3+、 Dy3+、Er3+、Eu3+、Fe3+、Gd3+、Ho3+、Ir3+、La3+、Lu3+、 Mn3+、Mo3+、Nb3+、Nd3+、Pm3+、Pr3+、Rh3+、Ru3+、 Sb3+、Sc3+、Sm3+、Ta3+、Tb3+、Ti3+、[TiCl]3+、[TiOH]3+、 Tm3+、V3+、[VO]3+、W3+、Y3+、Yb3+、[ZrCl]3+或[ZrOH]3+, 90 200805362 較佳為Co3+或Cr3+,以及η為1或2。 8· —種如式(I)之化合物,其中陽離子Ζ!包含下列之一基團89 200805362 3. An optical recording medium according to claim 1 or 2, wherein R2 and/or R6 are Ο, S, N-CN or N_S02CF3, preferably Ο. 4. An optical recording medium as claimed in claim 1, 2 or 3, wherein R3 and/or R7 are hydrazine, halogen, N02, CN, COR55, COOR60, SO3R60, 5 NCO or SCN, preferably Η. 5. The optical recording medium of claim 1, 2, 3 or 4, wherein the heterocyclic ring comprises G14G2, at least one R42 and R56, especially R42 is CF3, N02, CN, COR55, coor6〇, CR55OR61OR62, CONR63R64, so2r55, so3r6〇, so2nr63r64, preferably CF3, N02, CN, 10 COR55, coor60, so2r55, and/or SO3R60, or R42 and R56 together are unsubstituted or substituted butadiene, preferably It is unsubstituted or substituted by CF3, N02, CN, COR55, COOR60, and/or SO3R60. 6. The optical recording medium of claim 1, 2, 3, 4 or 5, wherein the heterocyclic ring comprises G3, R58 is Η or F, or together with R44 forms an unsubstituted or substituted diced An alkene, preferably unsubstituted, or via one or more Ci-C* alkyl, halogen, 〇6〇, sr60, NR55R61, CF3, N02, CN, cor55, coor6〇, so2r55, and/or S03R6〇 replaced. 7. For optical recording media of the scope of patent application No. 2, 3, 4, 5 or 6, 20 of which are As3+, Au3+, Bi3+, Ce3+, Co3+, Cr3+, Dy3+, Er3+, Eu3+, Fe3+, Gd3+, Ho3+, Ir3+, La3+, Lu3+, Mn3+, Mo3+, Nb3+, Nd3+, Pm3+, Pr3+, Rh3+, Ru3+, Sb3+, Sc3+, Sm3+, Ta3+, Tb3+, Ti3+, [TiCl]3+, [TiOH]3+, Tm3+, V3+, [VO]3+, W3+, Y3+, Yb3+, [ZrCl]3+ or [ZrOH]3+, 90 200805362 is preferably Co3+ or Cr3+, and η is 1 or 2. 8. A compound of formula (I) wherein the cation Ζ! comprises one of the following groups 91 20080536291 200805362 9·使用如申請專利範圍第1、2、3、4、5、6、7或8項任一 項之式(I)化合物於光學紀錄之用途,該紀錄係以波長低 於600 nm,較佳350至500 nm之雷射進行。 5 10· —種光學記錄或播放資訊之方法,其中波長小於600 nm,較佳自350至500 nm之雷射光束,係聚焦於如申請 專利範圍第1、2、3、4、5、6或7項任一項之記錄媒體 之記錄執道上。 11·如申請專利範圍第10項之方法,其中調製訊洞(pits 〇f 10 modulation)之至少0·30,較佳0.38至0.60被寫入。 12·如申請專利範圍第1、2、3、4、5、6或7項之光學紀錄 媒體,其中該記錄執道之照光後最大反射為14至28%, 其上執道訊洞(track pits)可以功率為7土5 mW之405士5 nm雷射光寫入,以及訊洞調製係以功率為〇.4±〇2 mW 15 之405士5 nm雷射測量,為至少〇.30,較佳為0.38至0.60。 13·如申請專利範圍第1、2、3、4、5、6或7項之光學紀錄 媒體’其中該記錄執道之照光前反射為10至30%,較佳 12至25%’其上執道訊洞可以功率為5土4 mW之405±5 nm之雷射光寫入,訊洞調製係以功率為0.35 土 0.15 mW 20 之405士5麵雷射測量,為至少0.30,較佳為0.38至0.60。 R如申請專利範圍第1、2、3、4、5、6或7項之光學紀錄 媒體’具有照光前反射為10至30%,較佳12至25%,照 92 200805362 光後反射為0至20%,較佳1至15%,使用功率為5±4 mW 之350-500 nm之雷射光照射,照光後之反射度低於照光 前0 939. The use of a compound of formula (I) according to any one of claims 1, 2, 3, 4, 5, 6, 7 or 8 for optical recording, the record being at a wavelength below 600 nm, A laser from 350 to 500 nm is performed. 5 10·—A method of optically recording or broadcasting information, wherein a laser beam having a wavelength of less than 600 nm, preferably from 350 to 500 nm, is focused on, for example, patent claims 1, 2, 3, 4, 5, 6 Or the recording of any of the seven recording media. 11. The method of claim 10, wherein at least 0.30, preferably 0.38 to 0.60, of the modulation channel (pits 〇f 10 modulation) is written. 12. If the optical recording medium of the patent scope 1, 2, 3, 4, 5, 6 or 7 is applied, the maximum reflection after the illumination of the record is 14 to 28%, and the track is on the track. Pits) can be written with a power of 7 ohms and 5 mW of 405 士 5 nm laser light, and a cavity modulation system with a power of 〇.4 ± 〇 2 mW 15 of 405 ± 5 nm laser measurement, at least 〇.30, It is preferably from 0.38 to 0.60. 13. If the optical recording medium of claim 1, 2, 3, 4, 5, 6 or 7 is applied for, the reflection before the illumination of the record is 10 to 30%, preferably 12 to 25%. The tunnel can be written with a laser of 405±5 nm with a power of 5 m 4 mW. The cavity modulation is measured with a power of 0.35 m 0.15 mW 20 405 士 5 laser, at least 0.30, preferably 0.38 to 0.60. R. For example, the optical recording medium of the first, second, third, fourth, fifth, sixth or seventh aspect of the patent application has a pre-reflection of 10 to 30%, preferably 12 to 25%, and 92. Up to 20%, preferably 1 to 15%, using a laser light of 350-500 nm with a power of 5 ± 4 mW, the reflectance after illumination is lower than 0 93 before illumination
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