TW200804629A - Power supply for anodizing - Google Patents

Abstract

A method for anodically oxidizing an aluminum alloy is provided for forming an anodically oxidized film on the surface of the aluminum alloy by using pulse power. An anodically oxidizing anode and an anodically oxidizing cathode are short-circuited for a short-circuiting time of 15 μs or shorter when a pulse voltage is not applied after a positive pulse voltage is applied. Furthermore, the cycle of waveform of the pulse power has a pulse voltage application time (T+), a dead time (Td) and a short-circuiting time (Ts) in this order. Thus, a film forming speed and productivity are improved by suppressing a negative current or by preventing the negative current from flowing.

Description

200804629 九&quot;Invention: [Technical Field] The present invention relates to an alloy anode anodicization method and a galvanic anode power source. 5 [Prior Art] In the past, in order to improve the surface hardness and wear resistance, corrosion resistance and -= colorability of aluminum alloy, it was immersed in an aqueous solution such as sulfuric acid, oxalic acid or phosphoric acid, and was treated with anodized An oxide film is formed on the surface. The anodized film is composed of a fine barrier layer and a porous porous layer, and is made of aluminum. It has been disclosed in [Metal Surface Technology, p. 512 (Touch)], [Near Mingming Surface, Treatment Research H (10), P. 1 (1988)] and Japanese Patent Laid-Open Publication Nos. 2000-282294 and 2004-35930, A film for obtaining a desired characteristic, and a method of applying electric power include a direct current method, a current inversion method, a 15 AC/DC superposition method, and a pulse waveform method. • When a film is formed at a high speed by the direct current method, if a high voltage at which a large current can flow is applied, the amount of heat generated by the Joule heat generated in the barrier layer is increased, resulting in generation on the oxide film. The defect of burning money. Therefore, • The current contains a large amount of _, copper, iron, etc. The current is not easily circulated. The casting is made of 2〇 and Ming House. The DC method does not form a thick anodic oxide film in a short time. In contrast, in order to prevent the oxide film from forming a "film burn-in" defect, a desired oxide film is formed in a short time with good productivity. Generally, a pulse electrolysis method including a current inversion method is used. It is better than using DC method 5 200804629. For example, [Metal Surface Technology, I Yangchuan 988]] reveals that the anodic oxidation of the current reversal method in which 5 negatively applies a negative current in the sulfuric acid soaking solution can be performed at a lower oxidation voltage than the anodic oxidation by the direct current method. An oxide film is formed at a high speed. In addition, in [Near 畿! Lu surface treatment research, Ν〇 1334 ρ·1 (1988)] revealed that 'Input Α 1080 Ρ into 2 ° ° c, mixed with 20% by weight (wt%) sulfuric acid and 1 〇 g In the soaking solution of /L oxalic acid, after electrolysis for 65 minutes at a frequency of 13·3 Hz, a current density of 4 A/dm 2 , and a power of 95% under a current inversion method, % μηη can be obtained. Aluminum anodized film (film formation rate 1·4 μιη/πήη). However, these methods have a problem that the film formation speed cannot be accelerated at a frequency of several 10 Hz units, especially a negative pressure of the alloying element. Also, it is necessary to apply a positive voltage, a negative voltage, and a power source that is a complicated two-pole type. In the AC/DC superposition method in which an alternating current plus direct current is applied, the AC component does not contain a negative component, and in the case where the AC component contains a DC component of 5% or more under an electrolysis condition, the aluminum alloy can be used in aluminum. The surface of the alloy forms an anodized aluminum film having superior heat resistance and good corrosion resistance. However, the appropriate current density is very low, only 0.1 to 2 A/dm2, and the film formation speed at this current density is extremely slow, and there are problems of productivity and cost. Also, this method must use AC power and DC power, so it also has a problem of complicating the power system. Further, the 'Proc. Publication No. 2004_35930 discloses a method for improving the film formation speed of the anodic oxide film from the viewpoint of productivity, which is a high frequency of sine wave of 200 to 5000 Hz (preferably 600 to 2000 Hz) in an aqueous solution of sulfuric acid solution. A current energization method in which current and DC current overlap. In other words, 200804629, the Ming alloy ADC12 is placed at 17. 〇5 1〇% of the aqueous solution soaking solution, the high frequency of the sine wave with a frequency of 1000 Hz and a voltage of ±20 v is overlapped with the 乂DC voltage, and the electrolytic treatment time is 20 minutes, and an anodized film of 22 _ can be obtained. Speed U μπι/min). Also, it is disclosed in the document that the current density after 5 minutes from the start of electrolysis is 13.8 A/dm2, but the frequency is limited to between 200 and 5000 Hz. Further, since a sine wave is used in practice, there is a problem that a current input per unit time is smaller than a rectangular wave. Also, since the AC power source and the DC power source must be used, there is also a problem that the power system is complicated. In addition, Japanese Laid-Open Patent Publication No. 2006-83467 discloses that for the purpose of improving corrosion resistance and impact resistance, molecules of an anodized film are grown in a random direction on an aluminum or a gold surface to form an anode having no alignment. A method of oxidizing a film. The specific method is to repeat the procedure of applying a positive voltage and eliminating the charge using an alloy containing impurities such as ruthenium, and each time 15 positive voltages are applied for 25 to 100 ps (frequency 5 to 20 KHz). The procedure for eliminating the charge temporarily terminates the addition of the positive voltage and performs a pole or an applied negative voltage. Although the above-mentioned literature describes morphology such as the randomness of the molecular direction of the film, the growth rate of the film is not described, and thus it is not clear. In order to increase the film formation speed, the inventors propose to short-circuit the anode for anodizing and the cathode for anodizing, and input a negative current (for the purpose of increasing the film formation speed). The current in the opposite direction when the pulse voltage is applied) to alleviate the concentration of aluminum ions (Al3+) or oxygen ions (02·) in the barrier layer formed when the pulse voltage is applied, and the electric double layer at the interface of the solid liquid Discharge 5 and in the pulse private pressure $ 卜 加 9 can lose the large electric method. This method is 3 = then the way to short-circuit, _ can eliminate the external force of the electric force when the voltage is applied, the _ sex problem of the formula, but the other side has the pulse of 1 ^ positive H 2G A / dm2 ' while the negative current As described above, although it is known that the film forming speed is increased, it is preferable to use an anode for anodizing and a cathode for anodizing at a pulse voltage, but it may be generated in the case of a short circuit. The problem of extremely negative current. (4) The invention of the rabbit is aimed at the above problems, and the film forming method to be solved by the invention; the method of suppressing or inputting a negative current can provide an 18-alkaline anodizing method for improving the productivity of the film and improving productivity. And the Shaohua power supply. In addition, the other problem to be solved by the present invention is to increase the frequency of the maximum current input by the pulse, thereby providing a film forming speed and improving the productivity of the alloy anodizing method and the aluminum alloy anodizing power source. In order to achieve the purpose of masquerading, the present invention provides an alloy anodizing=, the ship system is as described in the scope of the patent scope of the f, which uses a pulse, and anodicizes the anode and the anode for anodizing without applying a pulse voltage. The cathode is used to treat the _ method towel, and the contact ray is set to be lower than Μ. The second item of the present invention is characterized by the anodizing method of the aluminum alloy described in the scope of the patent of No. 8 200804629. Among them, the road time can be less than 5 ps. 5 10 15 20 Further, the third item of the scope of the patent application of the present invention is characterized in that the patent application is as described in item 1 or item 2! In the g-alloy anodization method, the waveform of the pulse power is formed in the order of the pulse electromigration time (5), the standby guard (Td), and the short-circuit time (Ts). In addition, the fourth item of the scope of the patent application of the present invention is characterized by the scope of the patent application! Item or the anodizing method of the alloy described in item 2: The frequency of the aforementioned pulse power is between 8a35KHz. The fifth aspect of the patent application scope of the present invention is characterized in that the frequency of the pulsed electric power in the basin is between 10 and 30 KHz in the method of anodizing the gold received in the patent or the second item. /, the alloy anodizing power supply provided by the invention is characterized by the use of pulse electric anodizing in the anodizing power source of the pulverized electric anodizing, which is not used when the pulse is light. = The terminal of the anode oxygen anode and the short circuit time connected to the anode oxygen fairy are less than 15 μ8. The seventh item of the patent scope of the invention is the patent application =: Shao alloy anodizing power supply, wherein the short range of the aforementioned patent scope is characterized by the application of patent Hr _, or ¥ 7 The 35-alloy anodized power source, wherein the waveform of the second power is formed in the order of the pulse voltage application time (τ+), the standby time (Td), and the short-circuit time (Ts). 9 200804629 Further, the feature of claim 9 of the present invention is the anodic oxidation of the alloy described in item 6 or item 7: the frequency of the aforementioned pulse power is between 8 and 35 KHz. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; By implementing the present invention, it is possible to provide a method for improving the riding degree and the raw material _ alloy anodizing and the gold anodizing power supply with almost no need to carry a negative current. In addition, by implementing the present invention, it is also possible to provide a frequency that can be used to increase the frequency of the current when the pulse voltage is applied, and can increase the film formation speed and the alloy. . Port [Simplified description of the drawings] The first figure is a graph showing the relationship between the film growth rate and the effective current density of the present invention. The figure is a schematic diagram of the power supply and electrolytic cell architecture of the present invention. The third figure is a waveform diagram of the pulse setting and actual voltage of the present invention. The fourth figure is the film growth stability diagram of the anodizing method of the present invention. The fifth figure is a diagram showing the relationship between the current waveform and the frequency of the present invention. The sixth graph is a graph of the experimental results of the present invention. : Seven figures are the relationship between the short circuit time and the negative current of the present invention. The eighth figure is the relationship between the negative current and the negative current when the invention is short-circuited. [Invention] The inventors of the present invention have found that the anode for anodizing and the cathode for anodizing are short-circuited and a certain amount of negative current is flown in the method of anodizing the aluminum alloy using pulsed electric power. The film formation speed can be increased. Also, it was found that the film growth rate is proportional to the effective current density (different figure). The effective current rate here is the difference between the positive current density when the pulse voltage is applied and the negative current density when the pulse voltage is not applied (effective 1 〇 current density = positive current density - negative current density). However, it has been found that the negative current has a problem of excessive density. For example, when the positive current density under an anodizing condition is 18 A/dm 2 , the negative current density is 12 8 A/dm 2 . Therefore, the inventors of the present invention have continued to study a method for improving the growth rate of the film in order to improve productivity. 15 That is, the above negative current is reduced, and a large current flows from the next pulse. As a result, it was found that there is almost no need to flow a negative current as described below, and a pulse waveform and a frequency of a large current flow in the next pulse. According to this new discovery, the inventors of the present invention have developed the following invention. The second figure is intended to be a power source and an electrolytic cell architecture used in the present invention. The anodizing power source 10 is composed of a forward DC power source u, a reverse frequency generator 12, a forward pulse generating circuit 13, a short circuit pulse generating circuit 14, a forward wave breaker switch 15, a reverse current diode 16, and a short circuit. The current control circuit 17, the forward breaker body amplifier 25, and the short-circuit gate expander 26 are formed, and the output terminal 18 is connected to the anode 2200804629 and the cathode 21 in the electrolytic cell 19. Further, a forward output voltmeter (?) 22, an electrolytic cell voltmeter (EB) 23, and an electrolytic cell galvanometer (Ab) 24 are provided. Anodization was carried out using the anodizing power source 5 as shown in Fig. 2 under the following conditions. As the test piece, a representative material A11〇〇p which is excellent in conductivity is used. 5 At this time, the size of the test piece is 50 mm X 50 mm x le5 mm (()&amp; dm2). In addition, a representative material having poor conductivity uses an ADCl2 material. At this time, the size of the test piece was 50 mm X 50 mm X 3e 〇 mm (Q 56 dm ). The electrolytic cell has an electrolyte enthalpy of about 200 l. It is stirred by liquid circulation and micro-aeration, and is cooled by a plate heat exchanger. The cathode rod is made of lead material and the cathode plate is made of carbon. The composition of the soaking solution was a freezer 'IL acid having a concentration of 15 〇g/L, and the temperature of the secondary bubble was 1 Torr. (^. The change in the anodization current density is carried out to 20 A/dm2. In addition, after the anodizing treatment, it is rinsed with well water flowing water for about 2 minutes, forced drying by hot air. The third figure shows the pulse setting conditions and the actual I5 waveform diagram of voltage and current. In the figure, T+ is the pulse voltage application time, Td is the pulse current is zero, and the standby time required for short circuit between the operation electrodes (this period becomes the loop state), and Ts is the short circuit time. The voltage waveform rises according to the setting of T+, and Td decreases slightly between the two, and the display is zero between the two. 20 The current waveform increases sharply at the beginning of I, and drops after the maximum value. 'Td is zero, and enters Ts. Instantly injects a large current, and immediately returns to zero '1\ between almost no circulation. After a few minutes, the negative current increases, and after the maximum value, it begins to decrease. This waveform can be proved as follows: Press, Yongsan Zhengyi, Gaoqiao English 12 200804629 Ming, Jia Tianman's "!g film formation and dissolution of anodized film" [metal surface technology, V〇L3 (), N. 9, p438_456 (1979)], The failure state of the anode and the crucible is as shown in the fourth figure, (the fourth _ series is shown in the fourth diagram (4) of the anode oxygen tilting projection layer). That is, the anode alloy is provided through the electrolyte. And cathode carbon, the oxidation of the anode

10

Oxygenated her, Yin_hydrogen ion is _ silk. At this time, the length is as follows. Dry " _ two =:) connected to 1 genus, anodized to become

Al—A Yan+3e· (The formula produced by the formula , 2·, part of which diffuses inside the barrier layer and moves into the electrolyte (fourth figure (magic 2). 3·- aspect' above the barrier layer At the interface with the electrolyte, the composition of the barrier layer is oxidized, although l2〇3) is subjected to a strong electric field, and is decomposed into aluminum ions and oxygen ions (02-) (fourth figure (4) 3): 2 ΑΓ + + 3α Ζ) 闽, two触 The contact ions generated by the above are moved in the electrolysis (4) (Fig. 4 (8) 4), and the oxygen ions generated by the above are moved in the barrier layer (Fig. 4(a) 5). 6. Move within the barrier layer and reach the barrier layer (oxygen her) / Shao interface n' and the boundary of the gold private reaction, and produce 3 map (8) 6): ^ 2A1 + 30 ~> Al2〇3 + 6e* (Formula 3) 13 200804629 7. In addition, at the interface of the barrier layer (oxidation)/electrolyte above the resist layer, water (H2〇) is decomposed into a strong ion field 5 into a nitrogen ion field +) and oxygen ions (figure (a) 7): H20^2H+ + 0- (Formula 4) 5 15 This B, the generated oxygen ions, a part of which is related to the production of alumina through the above steps #6 and #6. As described above, the growth of the barrier layer allows the anode oxide film to continue to grow through this step. At this time, the electric charge in the barrier layer moves in the form of aluminum ions and oxygen ions, and the mobility of aluminum ions is about 40. /. The mobility of oxygen ions is approximately 60%. Further, the lower the temperature, the more the oxidation current density increases, and the mobility of the aluminum ions decreases. That is, the growth rate of the film will increase. At this time, it is assumed that the potential curve near the barrier layer is as shown in the fourth diagram (b). 1. The concentration of aluminum ions in the barrier layer is high at the barrier layer/aluminum interface end and low at the barrier layer/electrolyte interface end (Fig. 4(b) (曱)). 2. In addition, the oxygen ion concentration in the barrier layer is low at the barrier layer/A1 interface end and high at the barrier layer/electrolyte interface end (Fig. 4(b)(b)) . 3. Moreover, the diffusion rate of aluminum ions in alumina has its limit. Therefore, as the electrolysis proceeds, the aluminum ions will remain on the aluminum/alumina interface. Therefore, the concentration of aluminum ions in the interface will be higher (Fig. 4(b) (c)). 4. In the same way, there is a limit to the diffusion rate of gas ions in the oxidation, 20 200804629 (b) (D). The oxygen ions in the surface will have a higher concentration (the fourth figure is understood as above, the waveform and current waveform are as follows Γ β

10 15

…,wave? The reason why it is slightly reduced between ^ (the third picture 疋 big ... Ming / oxidation! Lu interface of the Ming ion and oxidation Ming / electrolyte interface oxygen ions spread to the metal side and the electrolyte side. 2 · charter waveform Between τ+, the reason why it rises sharply at the beginning (third figure 2) is that it progresses rapidly due to the reaction of the rising voltage (formula 1), (formula 2), and (formula 3). Then, after the current waveform has passed the maximum value, it is reduced to reduce (Fig. 3). As the electrolysis progresses, as shown in the fourth figure (9), the concentration curve of the barrier layer including the two interfaces (potential barrier) Increased relationship. 4. After the electric catch value is reduced, the applied voltage and potential obstruction tend to balance and exhibit a certain current value (Fig. 4). 5. Between Td, 'Because the applied voltage is zero, the current is also Presents a zero state (third figure 5). 6. The moment between the Ts' short circuit between the Ts electrodes, the imide ions (or holes) at the interface of the oxidation/oxidation interface, and the oxygen ions at the interface of the oxidation/electrolyte interface ( Or electronic) form of electrification 'due to the elimination of sister electricity, The current will flow between extreme times (Fig. 6). 7. Then, during the period of ττ, almost no current flows (third figure 7). 'The negative current increases after Ττ time. After the maximum, it is turned on. 20 200804629 Start subtraction: &gt;, (Figure 2, Figure 8). This negative current 9 is due to the inverse reaction caused by (Formula 1), (Formula 2), (Phase - Figure). In addition, the time for these inverse reactions ♦ Constant, depending on the type of alloy and the composition of the electrolyte.

From the above 5-way time, when it is set to 5 below the ruler, it can be almost 5 negative currents. ^//IL In the experimental alloy material, A11 (8) with good conductivity is taken as an example. If the short circuit date is 7 [set to about 2 μ8, almost no negative current flows. = Outside, in the alloy material, the poor conductivity of the ADC12 is taken as an example. If the short-circuit ¥Ts is set to about 15 μδ, it will hardly flow. 10 When the Ττ is at Α1100, it is about 2 ps. . At ADC12: approximately 15 calls. In addition, even before the 5 call, even if there is a negative current, it is also very small. In addition, when using A1100 as the material, the short-circuit time is before, even if there is a negative current, it is also very small when the ADC12 is short. When the short-circuit time exceeds 15, the negative current will rush. As mentioned above, the better short-circuit time will change with the material of the alloy as described above, and only need to eliminate the potential barrier axis _ / oxygen charm interface and oxidation Ming / electrolyte boundary _ part, by the next material Plus 20 can flow a large current. As described above, with the A1100 material, the short-circuit time is less than 5 叩, preferably about 1 to 3 μδ, and the formed oxidized film is not reduced by the negative current, so __ increases the oxidation__ growth rate. On the other hand, when the ADC12 material is used and the short-circuit time is set to ΐ5 μ or less, 16 200804629 can increase the growth rate of the aluminum oxide film. As shown in the first figure, it can be seen that the growth rate of the 9 film is proportional to the effective current density, and the negative current causes a decrease in the effective current. (A1〇〇 material is taken as an example) The short-circuit time is set to 5 (five) or less as described above. 5 is preferably set at about 1 to 3 shame, and the film growth rate can be greatly improved (about 2 times). However, it has been found that the optimization of the pulse frequency can increase the film growth rate. The fifth picture shows the detailed diagram of the current waveform of the second picture. The fifth diagram (a) shows the case where the frequency is low (the case where T+ is large), and the fifth diagram (b) shows the case where the frequency is high (the case where τ + 10 is small). However, in the fifth diagram (b), Ts is set to 2, that is, the case where the negative current hardly flows. The frequency of the pulse f: %)=l/(T+(i) + Td.Ts) -------- (Formula 5) The electric quantity Q' used for anodizing is the integral value of the current waveform of the fifth graph S 15 (〇, assuming that the frequency at this time is f(i), Q(i)=S(i)-f(i)--------------------- (Equation 6) The larger the Q(1) value is, the larger the film growth rate is. The τ+ (the range of 〇, which in the fifth figure can be regarded as the largest τ+〇η in the fifth figure) and the area with the large Q(1) (a) = area (8) between TV (6). 20 The current waveform obtained by the experiment is obtained. · T+(4)25 pis T+(e)= 90 |is corresponds to these frequencies, as shown in the fifth figure (b) $ 5叩, when it is A1100 material, ts = 2 (is 'when it is ADC12 material, when τ 2 17 200804629 is the best value, 9 will have fmax =1/(25+5+2)=313 KHz fmin = 1 / (90 + 5 + 15) = 9.1 KHz. In practice, it is experimentally between 8 and 35 KHz, and it is confirmed that there is no problem in the anodization of 5. The following is a detailed description of the present invention by way of examples. (Embodiment 1) As in the first embodiment of the sixth embodiment, Τ+=80 μδ, Td=5 ps, and Ivf are variously changed, and the result shows that 1+=20 A/dm2 can be stabilized. The anodic oxygen is 10. Therefore, this value is fixed (the same applies to the examples 2, 3, 4, 5, and 6), and when the Ts is changed to 2, 3, 4, 5, 10, 20, 40, the negative current changes. In addition, the test piece used Α1100 material. The negative current hardly circulates at Ts=2 μδ, and only a small amount flows at Ts &lt; 5 μδ, and increases sharply at 5 ps &lt; Ts. In order to increase the growth rate of the aluminum oxide film, it is necessary to set the short-circuit time Ts to 5 μδ or less. Optimum setting is about 2 Å, and it is possible to suppress or hardly flow a negative current. (Embodiment 2) Embodiment of Fig. 6 2, fixed τ+=8〇us, τ丁H id~5 ps, Ts 20 =5 ' and I+=20 A/dm2, and the result is 0, _2, -4 and -6 volts (V) when short circuit is obtained. The negative voltage is the result of a negative current change. In addition, the test piece uses A1100 material.

Under the condition of Ts=5 p, when the negative voltage increases from 〇 to v, the negative current density increases from 0.6 to 0·9 A/dm2, but η, and 14 increase to 18 200804629 positive current density 20 A/ For dm2, it is a small value. That is, σ is to reduce the short-circuit time Ts to about 5 μ3. 5 Even if a negative voltage is supplied during a short circuit, a large negative current does not flow. Thus, the short circuit time is short, in other words, the importance of Ττ can be understood. w (Example 3)

In the third embodiment of the sixth figure, it is fixed to T &gt; 80 ps, Td = 5 ps, T = 40 ps, and 1 + = 20 A/dm2, and the result is that 短路, _2 ^ -4, -6 V are first applied when short circuit is obtained. The negative voltage is the result of a negative current change. In addition, the test piece used A1100 material. As shown in Embodiment 2, there is only a small amount of negative current when Ts = 5^. However, in the present embodiment, when Ts = 40 设为, a large negative current having a positive current density of about 20 A/dm 2 - a half value is generated. From =, you can understand the importance of everything. (Example 4) In Example 4, the Τ+=40 mesh, Τ&gt;5 μ8, and 1+=20 A/dm2 were fixed, and Ts was changed to 2, 1〇, 2〇, 4〇 shame. , the result of the negative current change. In addition, the test piece was made of ΑΠ00 material. The f current hardly flows when the short circuit time is 2. However, the short-circuit a guard increases to 1〇, 2〇, 4〇μ and increases sharply. The value of the time is 40 deg", and the negative current will be as high as 15 A/dm2 with respect to the positive current density of 20 A/dm2. Angle test (Embodiment 5) = In the fifth embodiment of the sixth figure, the fixed Τ &gt; 40, Td = 5 叩, 5 μ: and i + = = 2 〇 A / dm2, external force 〇, _ Heart v * Negative voltage when 'negative current change results. In addition, the test piece makes) 20 200804629 A1100 material. In this example, it can be seen that when the short-circuit time is shortened to 5 b 8 in the same manner as in the example 2, even if the negative voltage is increased from 〇増 to _6 V, the reverse current does not change much, and continues. Maintain a small value. ^ 5 (Embodiment 6) In Embodiment 6 of the sixth figure, T +=40 us, τ - &lt; 丄d - 5 "s, Ts = 20 ps, and 1 + = 20 A/dm2 are fixed. When a negative voltage of 〇, _2, 4 ^ ^ was applied, the resulting negative current was changed. In addition, the test piece was made of Α1100 material. It can be seen that in Example 5 of Ts=5 ps, it is a low-value 10 reverse current. In the case of Ts=20 of the present embodiment, the increase is shown in ten-fold. The seventh figure is the relationship between the short-circuit time and the reverse current of Examples 1 and 4. From this figure, it can be known that the test piece uses Α1100 material. When the short-circuit time is 2 ps, the negative current will hardly flow. However, when 5 is 15, it will increase sharply. The eighth figure is the short circuit of the second, third, fifth, and sixth embodiments. The relationship between the negative voltage and the negative current added at the time. It can be seen that when the test piece uses A1100 material, no large negative current flows before Ts=5 ps regardless of the negative voltage. However, the large negative The current will flow with an increase of Ts=20 μ8 and Ts==4〇(4)20. (Example 7) The test piece uses a poorly conductive ADC12. Material, called fixed Jiro + D 'Td = 5 ps, and when l〇 I + = A / dm2, until Ts reaches 15, the negative current hardly flow. However, when more than 15, a negative current will 20,200,804,629

Irritable in circulation. Further, as a result of various changes in the current density, stable anodization can be obtained even under the condition of 1 + 10 A/dm 2 . Therefore, use this value as a representative. 21 200804629 [Simple description of the drawings] The first figure is a graph showing the relationship between the film growth rate and the effective current density of the present invention. '(1) Again, the diagram is a schematic diagram of the power supply and the electrolytic cell (four). The third figure is a diagram of the pulse setting and the actual voltage and i-flow of the present invention. The fourth figure is the film growth stability of the anodizing method of the present invention = the relationship between the current waveform and the frequency of the present invention. ^8 is a graph of the experimental results of the present invention. Figure ϊ t Ming's bribe (four) and negative current relationship diagram. The diagram is the relationship between the negative voltage and the negative current in the short circuit of the invention. 15 [Main component symbol description] 11 forward DC power supply 13 forward pulse generation circuit 15 forward wave breaker switch Η short circuit current control circuit 19 electrolytic cell cathode 23 Electrolyzer voltmeter 25 forward wave breaker gate expander 27 electrolyte 10 anodizing power supply 12 reverse frequency generator 14 short circuit end pulse generating circuit 16 prevent countercurrent diode 20 18 output creeper 20 anode 22 forward round Voltmeter 24 electrolytic cell galvanometer 26 short-circuit end gate expander 22

Claims (1)

200804629 X. Patent application scope: 1.: - An anodic oxidation method of ig alloy, which is characterized by the use of pulsed power: when the anode is not charged with a pulse charging pressure, the anode for anodizing and the cathode for anodizing are used in the anodizing method of the alloy. Short-circuit, the short-circuit time is set to be lower than 15 μβ 〇-, 5, 2. The aluminum alloy anodizing method as described in claim 1 wherein the short-circuit time is less than 5 μδ. Φ 3· The method of anodizing an aluminum alloy according to claim 1 or 2, wherein the pulse power waveform is in accordance with a pulse voltage application time (τ+), a standby time (Td), and a short circuit time (6). The order is composed. 4· * The anodic oxygen of the alloy described in item i or item 2 of the patent scope is applied, wherein the frequency of the pulse power is between 8 and 35 kHz. The anode of the aluminum alloy described in the first or second aspect of the patent scope of the application is in which the frequency of the pulse power is between 1 〇 and 3 〇 KHz. Aluminum alloy 1 two kinds of aluminum alloy anodizing power supply, in the use of pulsed power anode oxygen _ Yuan Luhe ^ aluminum alloy anodizing power supply, when the pulse voltage is not generated, 'mountain; 1% pole gasification anode terminal and connection The short circuit time of the dice for the cathode for anodizing is less than 15 邶. • The aluminum alloy anodized electric -2 〇 ' described in item 6 of the scope of the patent application, wherein the short circuit time is less than 5 ps. The source of the aluminum alloy anode oxygen gate according to the sixth or seventh aspect of the patent scope of the application, wherein the waveform of the pulse power is in accordance with the pulse voltage application time (+) standby time (Td), and the short circuit The order of time (ts) is made up. &lt; +9. The aluminum alloy anode oxygen private source according to claim 6 or 7, wherein the pulse power has a frequency of between 8 and 35 kHz. 23 200804629 ι〇β化电源 The aluminum alloy anode oxygen as described in claim 6 or 7, wherein the frequency of the pulsed power is between 10 and 30 KHz.