TW200802817A - Self-aligned, embedded phase change ram and manufacturing method - Google Patents
Self-aligned, embedded phase change ram and manufacturing methodInfo
- Publication number
- TW200802817A TW200802817A TW95123683A TW95123683A TW200802817A TW 200802817 A TW200802817 A TW 200802817A TW 95123683 A TW95123683 A TW 95123683A TW 95123683 A TW95123683 A TW 95123683A TW 200802817 A TW200802817 A TW 200802817A
- Authority
- TW
- Taiwan
- Prior art keywords
- phase change
- electrode
- aligned
- self
- manufacturing
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
An integrated circuit with an embedded memory comprises a substrate and a plurality of conductor layers arranged for interconnecting components of the integrated circuit. An intermediate layer in the plurality of conductor layers includes a first electrode having a top surface, a second electrode having a top surface, and insulating member between the first electrode and the second electrode. A bridge overlies the intermediate layer between the first and second electrodes across the insulating member, wherein the bridge comprises a programmable resistive memory material, such as a phase change material. A conductor in at least one layer in the plurality of conductor layers over said intermediate layer is connected to said bridge.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/424,749 US8237140B2 (en) | 2005-06-17 | 2006-06-16 | Self-aligned, embedded phase change RAM |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802817A true TW200802817A (en) | 2008-01-01 |
| TWI347672B TWI347672B (en) | 2011-08-21 |
Family
ID=38943371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095123683A TWI347672B (en) | 2006-06-16 | 2006-06-29 | Self-aligned, embedded phase change ram and manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100573899C (en) |
| TW (1) | TWI347672B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8962411B2 (en) | 2012-08-09 | 2015-02-24 | Nanya Technology Corp. | Circuit pattern with high aspect ratio and method of manufacturing the same |
| TWI557777B (en) * | 2014-01-24 | 2016-11-11 | 台灣積體電路製造股份有限公司 | Semiconductor device and formation thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024839B (en) * | 2009-09-11 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | Phase change memory, isolation structure for memory unit and manufacturing method thereof |
-
2006
- 2006-06-29 TW TW095123683A patent/TWI347672B/en active
-
2007
- 2007-06-07 CN CNB2007101082899A patent/CN100573899C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8962411B2 (en) | 2012-08-09 | 2015-02-24 | Nanya Technology Corp. | Circuit pattern with high aspect ratio and method of manufacturing the same |
| TWI491026B (en) * | 2012-08-09 | 2015-07-01 | Nanya Technology Corp | Circuit pattern with high aspect ratio and method of manufacturing the same |
| TWI557777B (en) * | 2014-01-24 | 2016-11-11 | 台灣積體電路製造股份有限公司 | Semiconductor device and formation thereof |
| US9564357B2 (en) | 2014-01-24 | 2017-02-07 | Taiwan Semiconductor Manufacturing Company Limited | Method of forming semiconductor device using etch stop layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100573899C (en) | 2009-12-23 |
| CN101090130A (en) | 2007-12-19 |
| TWI347672B (en) | 2011-08-21 |
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