TW200746576A - Optoelectronic device electrostatic discharge protection - Google Patents

Optoelectronic device electrostatic discharge protection

Info

Publication number
TW200746576A
TW200746576A TW096104803A TW96104803A TW200746576A TW 200746576 A TW200746576 A TW 200746576A TW 096104803 A TW096104803 A TW 096104803A TW 96104803 A TW96104803 A TW 96104803A TW 200746576 A TW200746576 A TW 200746576A
Authority
TW
Taiwan
Prior art keywords
electrostatic discharge
optoelectronic device
discharge protection
device electrostatic
link driver
Prior art date
Application number
TW096104803A
Other languages
English (en)
Other versions
TWI410013B (zh
Inventor
Darren Crews
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200746576A publication Critical patent/TW200746576A/zh
Application granted granted Critical
Publication of TWI410013B publication Critical patent/TWI410013B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Elimination Of Static Electricity (AREA)
  • Emergency Protection Circuit Devices (AREA)
TW096104803A 2006-02-10 2007-02-09 光電子裝置靜電放電保護技術 TWI410013B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/351,681 US20070188951A1 (en) 2006-02-10 2006-02-10 Optoelectronic device ESD protection

Publications (2)

Publication Number Publication Date
TW200746576A true TW200746576A (en) 2007-12-16
TWI410013B TWI410013B (zh) 2013-09-21

Family

ID=38198213

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096104803A TWI410013B (zh) 2006-02-10 2007-02-09 光電子裝置靜電放電保護技術

Country Status (3)

Country Link
US (1) US20070188951A1 (zh)
TW (1) TWI410013B (zh)
WO (1) WO2007095325A2 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7738517B2 (en) * 2007-10-29 2010-06-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Small form factor transmitter optical subassembly (TOSA) having functionality for controlling the temperature, and methods of making and using the TOSA
US8315287B1 (en) 2011-05-03 2012-11-20 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device
US8488645B2 (en) 2011-07-31 2013-07-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793591A (en) * 1980-12-03 1982-06-10 Hitachi Ltd Laser diode
JPH01214080A (ja) * 1988-02-22 1989-08-28 Seiko Epson Corp 半導体レーザ駆動回路
US5173755A (en) * 1989-05-12 1992-12-22 Western Digital Corporation Capacitively induced electrostatic discharge protection circuit
US5159518A (en) * 1990-01-17 1992-10-27 Vlsi Technology, Inc. Input protection circuit for CMOS devices
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
US5579328A (en) * 1995-08-10 1996-11-26 Northern Telecom Limited Digital control of laser diode power levels
US6185240B1 (en) * 1998-01-30 2001-02-06 Motorola, Inc. Semiconductor laser having electro-static discharge protection
US6496477B1 (en) * 1999-07-09 2002-12-17 Texas Instruments Incorporated Processes, articles, and packets for network path diversity in media over packet applications
DE19945134C2 (de) * 1999-09-21 2003-08-14 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung
JP2001156386A (ja) * 1999-11-26 2001-06-08 Sony Corp 半導体レーザ
JP2002050825A (ja) * 2000-08-01 2002-02-15 Sharp Corp 半導体レーザ装置の保護回路
JP2002164613A (ja) * 2000-11-27 2002-06-07 Sharp Corp 半導体レーザ装置
JP2003078486A (ja) * 2001-08-31 2003-03-14 Mitsubishi Electric Corp 光送受信器、多重化集積回路、多重分離集積回路、一体型多重化／多重分離集積回路及び光送受信器の評価・試験方法
KR100425477B1 (ko) * 2001-12-07 2004-03-30 삼성전자주식회사 발광 소자 보호 회로
US6941080B2 (en) * 2002-07-15 2005-09-06 Triquint Technology Holding Co. Method and apparatus for directly modulating a laser diode using multi-stage driver circuitry
US6990412B2 (en) * 2002-10-17 2006-01-24 Intel Corporation Techniques to manufacture optical signal transmitters
JP2004172237A (ja) * 2002-11-18 2004-06-17 Sharp Corp 光送信制御装置
US7339963B2 (en) * 2002-11-27 2008-03-04 International Business Machines Corporation High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver
US6931040B2 (en) * 2003-06-20 2005-08-16 Maxim Integrated Products, Inc. System and method for using an output transformer for laser diode drivers
TWI223900B (en) * 2003-07-31 2004-11-11 United Epitaxy Co Ltd ESD protection configuration and method for light emitting diodes
JP2005116796A (ja) * 2003-10-08 2005-04-28 Toshiba Corp 半導体装置
TWM245481U (en) * 2003-10-14 2004-10-01 Wistron Corp Extendable computer system
US7178992B2 (en) * 2003-11-18 2007-02-20 Broadcom Corporation Apparatus and method of signal detection in an optical transceiver
US7122843B2 (en) * 2004-05-28 2006-10-17 Eastman Kodak Company Display device using vertical cavity laser arrays
WO2006011766A1 (en) * 2004-07-28 2006-02-02 Epivalley Co., Ltd. Optical device with photo detector
US7660128B2 (en) * 2004-09-30 2010-02-09 Emcore Corporation Apparatus for electrical and optical interconnection
US7508047B2 (en) * 2004-12-03 2009-03-24 Finisar Corporation Vertical cavity surface emitting laser with integrated electrostatic discharge protection
US20070009267A1 (en) * 2005-06-22 2007-01-11 Crews Darren S Driving a laser using an electrical link driver

Also Published As

Publication number Publication date
US20070188951A1 (en) 2007-08-16
WO2007095325A2 (en) 2007-08-23
WO2007095325A3 (en) 2007-10-04
TWI410013B (zh) 2013-09-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees