TW200746368A - Manufacturing method of non-volatile memory - Google Patents

Manufacturing method of non-volatile memory

Info

Publication number
TW200746368A
TW200746368A TW095120519A TW95120519A TW200746368A TW 200746368 A TW200746368 A TW 200746368A TW 095120519 A TW095120519 A TW 095120519A TW 95120519 A TW95120519 A TW 95120519A TW 200746368 A TW200746368 A TW 200746368A
Authority
TW
Taiwan
Prior art keywords
layer
stacked
substrate
manufacturing
volatile memory
Prior art date
Application number
TW095120519A
Other languages
Chinese (zh)
Inventor
Wen-Jen Chen
Liang-Chuan Lai
Rex Young
Pin-Yao Wang
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW095120519A priority Critical patent/TW200746368A/en
Publication of TW200746368A publication Critical patent/TW200746368A/en

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Manufacturing method of non-volatile memory is provided. A substrate having a stacked layer formed thereon is provided. The stacked layer is patterned, and then a plurality of first openings is formed in the stacked layer to expose the substrate. A dielectric layer is formed on the substrate. A plurality of conductive spacers is formed on the sidewalls of the stacked layer exposed by the first openings. A patterned mask layer is formed on the substrate to fill the first openings. The patterned mask layer has a plurality of second opening therein to expose a part of the stacked layer. A part of the stacked layer is removed to form a plurality of stacked gate structures by using the patterned mask layer as a mask. The stacked gate structures form a memory cell array between two conductive spacers.
TW095120519A 2006-06-09 2006-06-09 Manufacturing method of non-volatile memory TW200746368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095120519A TW200746368A (en) 2006-06-09 2006-06-09 Manufacturing method of non-volatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095120519A TW200746368A (en) 2006-06-09 2006-06-09 Manufacturing method of non-volatile memory

Publications (1)

Publication Number Publication Date
TW200746368A true TW200746368A (en) 2007-12-16

Family

ID=57914577

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120519A TW200746368A (en) 2006-06-09 2006-06-09 Manufacturing method of non-volatile memory

Country Status (1)

Country Link
TW (1) TW200746368A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697032B (en) * 2016-10-24 2020-06-21 聯華電子股份有限公司 Method of fabricating semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697032B (en) * 2016-10-24 2020-06-21 聯華電子股份有限公司 Method of fabricating semiconductor device

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