TW200746270A - Device and method for measuring ion beam, and ion beam irradiation device - Google Patents

Device and method for measuring ion beam, and ion beam irradiation device

Info

Publication number
TW200746270A
TW200746270A TW096111782A TW96111782A TW200746270A TW 200746270 A TW200746270 A TW 200746270A TW 096111782 A TW096111782 A TW 096111782A TW 96111782 A TW96111782 A TW 96111782A TW 200746270 A TW200746270 A TW 200746270A
Authority
TW
Taiwan
Prior art keywords
ion beam
detector
ion
porous electrode
measuring
Prior art date
Application number
TW096111782A
Other languages
Chinese (zh)
Other versions
TWI329892B (en
Inventor
Takeshi Matsumoto
Yasunori Ando
Original Assignee
Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Publication of TW200746270A publication Critical patent/TW200746270A/en
Application granted granted Critical
Publication of TWI329892B publication Critical patent/TWI329892B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

To provide a device and method capable of measuring characteristics carried by an ion beam when being emitted from an ion extraction hole of an ion source having a porous electrode, without requiring complicated operation processing. The device 40a for measuring the ion beam includes a shielding plate 12 having an opening 14 to be passed by a part of an ion beam 10 extracted from the porous electrode 6 of the ion source 2, a detector 18 for detecting a beam current of the ion beam 10 passing the opening 14, and a detector driving device 24 for moving it in the x-direction. Assuming that the distance between the porous electrode 6 and the detector 18 is L, the distance between the shielding plate 12 and the detector 18 is d, a dimension of each ion extraction hole 8 of the porous electrode 6 in the x-direction is a, a gap thereof is p, a dimension of the opening 14 is b, and a dimension of the detector 18 is w, the relation expressed by the formula is satisfied: w(L-d)+bL}/d < (p-a).
TW096111782A 2006-04-04 2007-04-03 Device and method for measuring ion beam, and ion beam irradiation device TW200746270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006103185A JP4151703B2 (en) 2006-04-04 2006-04-04 Ion beam measuring apparatus, measuring method, and ion beam irradiation apparatus

Publications (2)

Publication Number Publication Date
TW200746270A true TW200746270A (en) 2007-12-16
TWI329892B TWI329892B (en) 2010-09-01

Family

ID=38680352

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111782A TW200746270A (en) 2006-04-04 2007-04-03 Device and method for measuring ion beam, and ion beam irradiation device

Country Status (4)

Country Link
JP (1) JP4151703B2 (en)
KR (1) KR100865507B1 (en)
CN (1) CN100565246C (en)
TW (1) TW200746270A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009217980A (en) * 2008-03-07 2009-09-24 Nissin Ion Equipment Co Ltd Voltage determination method of ion source
KR100978793B1 (en) 2008-11-19 2010-08-30 한국원자력연구원 Low energy, high current and large beam extraction and transport device using multiple accel-decel electrodes
CN103576468B (en) * 2012-08-10 2016-03-09 北京京东方光电科技有限公司 A kind of exposure sources and baffle plate control method thereof
JP6253524B2 (en) 2014-06-13 2017-12-27 住友重機械イオンテクノロジー株式会社 Beam irradiation apparatus and beam irradiation method
JP6581520B2 (en) * 2016-02-09 2019-09-25 株式会社ニューフレアテクノロジー Charged particle beam lithography system
JP6579985B2 (en) * 2016-03-18 2019-09-25 住友重機械イオンテクノロジー株式会社 Ion implantation apparatus and measurement apparatus
JP6720861B2 (en) 2016-12-28 2020-07-08 株式会社ニューフレアテクノロジー Multi-beam aperture set and multi-charged particle beam drawing device
CN111769030A (en) * 2019-04-02 2020-10-13 北京中科信电子装备有限公司 Device and method for measuring density distribution of beam in vertical direction
CN111769027B (en) * 2019-04-02 2024-07-30 北京中科信电子装备有限公司 Device and method for measuring angle of beam in vertical direction
CN110694186B (en) * 2019-09-20 2020-11-17 华中科技大学 Computer readable storage medium for fitting particle beam spot position based on hardware gauss
CN111403251A (en) * 2020-04-13 2020-07-10 中国兵器科学研究院宁波分院 Radio frequency ion source ion beam diameter restraint device, beam diameter control device and method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246298A (en) 2001-02-20 2002-08-30 Nikon Corp Method for evaluating imaging performance of charged particle beam exposure apparatus and charged particle beam exposure apparatus
WO2004053943A2 (en) 2002-12-11 2004-06-24 Purser Kenneth H Emittance measuring device for ion beams
JP2004205223A (en) 2002-12-20 2004-07-22 Chi Mei Electronics Corp Ion beam distribution detection apparatus and ion beam orientation processing apparatus using the same
JP2005056698A (en) 2003-08-05 2005-03-03 Seiko Epson Corp Manufacturing method of ion implanting device and ion beam emittance measuring instrument, and semiconductor device
JP2005197335A (en) 2004-01-05 2005-07-21 Nikon Corp Measuring method and adjusting method of image formation performance of charged particle beam aligner, and charged particle beam aligner
JP2005317412A (en) 2004-04-30 2005-11-10 Riipuru:Kk Measuring method for intensity distribution of electron beams and intensity distribution measuring device

Also Published As

Publication number Publication date
TWI329892B (en) 2010-09-01
CN101051086A (en) 2007-10-10
KR20070099480A (en) 2007-10-09
JP2007278755A (en) 2007-10-25
KR100865507B1 (en) 2008-10-29
JP4151703B2 (en) 2008-09-17
CN100565246C (en) 2009-12-02

Similar Documents

Publication Publication Date Title
TW200746270A (en) Device and method for measuring ion beam, and ion beam irradiation device
WO2003067244A3 (en) Faims with non-destructive detection of selectively transmitted ions
WO2004027808A3 (en) Particle-optical device and detection means
DK1733213T3 (en) Eliminating cross-talk in a multi-source retransmission inspection portal by ensuring that only one source emits radiation at a time
EP2508903A3 (en) Inspection device using secondary charged particle detection
WO2007097920A3 (en) High sensitivity slitless ion source mass spectrometer for trace gas leak detection
EP2343546A3 (en) Ion mobility spectrometer
MY142150A (en) Apparatus for measuring a set of electrical characteristics in a plasma
JP2013115047A5 (en) Plasma source as electron beam source for spectroscopic analysis.
TW200723338A (en) Method of operating ion source and ion implanting apparatus
WO2009144727A3 (en) Charged particle detection system and method
TW200739058A (en) Chamber particle detection system
WO2005096342A3 (en) Method and apparatus for ion fragmentation by electron capture
GB2418018B (en) A method of analysing a sample including fluorescent labels and apparatus therefor
WO2014154941A1 (en) Method and device for ionizing particles of a sample gas flow
WO2014086674A3 (en) Device for monitoring an electron beam via an electrical sensor with multiple conductors
WO2008090600A1 (en) Mass analyzer
DE502007006321D1 (en) DEVICE AND METHOD FOR DETECTING PARTICLES WITH PIPETTE AND NANOPORE
EP2112680A3 (en) Mass spectrometry substrate and mass spectrometry method
TW200702644A (en) Ion beam measurement apparatus and method
SE0200782D0 (en) Method of analyzing a pharmaceutical sample
WO2009114932A8 (en) Systems and methods for analyzing substances using a mass spectrometer
Gunzer et al. Investigation of dimethyl methylphosphonate (DMMP) with an Ion mobility spectrometer using a pulsed electron source
WO2011130097A3 (en) Ion beam sample preparation apparatus and methods
TW200746273A (en) Ion beam irradiating apparatus, and method of producing semiconductor device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees