TW200744207A - Heterojunction bipolar transistor and fabrication method thereof - Google Patents

Heterojunction bipolar transistor and fabrication method thereof

Info

Publication number
TW200744207A
TW200744207A TW095119156A TW95119156A TW200744207A TW 200744207 A TW200744207 A TW 200744207A TW 095119156 A TW095119156 A TW 095119156A TW 95119156 A TW95119156 A TW 95119156A TW 200744207 A TW200744207 A TW 200744207A
Authority
TW
Taiwan
Prior art keywords
layer
base
bipolar transistor
heterojunction bipolar
fabrication method
Prior art date
Application number
TW095119156A
Other languages
English (en)
Chinese (zh)
Other versions
TWI298539B (enrdf_load_stackoverflow
Inventor
Wen-Chau Liu
Shiou-Ying Cheng
si-yi Fu
Original Assignee
Univ Nat Cheng Kung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Cheng Kung filed Critical Univ Nat Cheng Kung
Priority to TW095119156A priority Critical patent/TW200744207A/zh
Publication of TW200744207A publication Critical patent/TW200744207A/zh
Application granted granted Critical
Publication of TWI298539B publication Critical patent/TWI298539B/zh

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  • Bipolar Transistors (AREA)
TW095119156A 2006-05-30 2006-05-30 Heterojunction bipolar transistor and fabrication method thereof TW200744207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095119156A TW200744207A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095119156A TW200744207A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor and fabrication method thereof

Publications (2)

Publication Number Publication Date
TW200744207A true TW200744207A (en) 2007-12-01
TWI298539B TWI298539B (enrdf_load_stackoverflow) 2008-07-01

Family

ID=45069416

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119156A TW200744207A (en) 2006-05-30 2006-05-30 Heterojunction bipolar transistor and fabrication method thereof

Country Status (1)

Country Link
TW (1) TW200744207A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394217B (zh) * 2009-12-22 2013-04-21 Just Innovation Corp 雙極性電晶體的製造方法
TWI463540B (zh) * 2011-12-27 2014-12-01 Epitron Technology Inc 製造異質接面雙極性電晶體晶圓之磊晶製程

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582720B (zh) * 2022-02-08 2025-09-02 上海芯导电子科技股份有限公司 GaN HEMT器件的栅极刻蚀方法、器件制备方法、器件、设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394217B (zh) * 2009-12-22 2013-04-21 Just Innovation Corp 雙極性電晶體的製造方法
TWI463540B (zh) * 2011-12-27 2014-12-01 Epitron Technology Inc 製造異質接面雙極性電晶體晶圓之磊晶製程

Also Published As

Publication number Publication date
TWI298539B (enrdf_load_stackoverflow) 2008-07-01

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MM4A Annulment or lapse of patent due to non-payment of fees