TW200744163A - Semiconductor device with L-shape spacer and method of fabricating the same - Google Patents
Semiconductor device with L-shape spacer and method of fabricating the sameInfo
- Publication number
- TW200744163A TW200744163A TW095118551A TW95118551A TW200744163A TW 200744163 A TW200744163 A TW 200744163A TW 095118551 A TW095118551 A TW 095118551A TW 95118551 A TW95118551 A TW 95118551A TW 200744163 A TW200744163 A TW 200744163A
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating layer
- semiconductor device
- substrate
- fabricating
- same
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 125000006850 spacer group Chemical group 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095118551A TWI299549B (en) | 2006-05-25 | 2006-05-25 | Semiconductor device with l-shape spacer and method of fabricating the same |
| US11/465,881 US7524732B2 (en) | 2006-05-25 | 2006-08-21 | Semiconductor device with L-shaped spacer and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095118551A TWI299549B (en) | 2006-05-25 | 2006-05-25 | Semiconductor device with l-shape spacer and method of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200744163A true TW200744163A (en) | 2007-12-01 |
| TWI299549B TWI299549B (en) | 2008-08-01 |
Family
ID=38748738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095118551A TWI299549B (en) | 2006-05-25 | 2006-05-25 | Semiconductor device with l-shape spacer and method of fabricating the same |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7524732B2 (zh) |
| TW (1) | TWI299549B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI499043B (zh) * | 2012-07-19 | 2015-09-01 | Winbond Electronics Corp | 快閃記憶體元件之製造方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7588982B2 (en) * | 2006-08-29 | 2009-09-15 | Micron Technology, Inc. | Methods of forming semiconductor constructions and flash memory cells |
| KR101831936B1 (ko) | 2011-12-22 | 2018-02-26 | 삼성전자주식회사 | 박막 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| CN103579122B (zh) * | 2012-08-09 | 2017-03-08 | 华邦电子股份有限公司 | 快闪存储器元件的制造方法 |
| CN104716099B (zh) * | 2013-12-13 | 2018-12-14 | 旺宏电子股份有限公司 | 非挥发性记忆体及其制造方法 |
| US9761662B1 (en) | 2017-02-03 | 2017-09-12 | Globalfoundries Inc. | Active area shapes reducing device size |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0862207A1 (de) * | 1997-02-27 | 1998-09-02 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines DRAM-Grabenkondensators |
| US20050006795A1 (en) * | 2003-07-09 | 2005-01-13 | Cheng-Ming Yih | Corner free structure of nonvolatile memory |
-
2006
- 2006-05-25 TW TW095118551A patent/TWI299549B/zh active
- 2006-08-21 US US11/465,881 patent/US7524732B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI499043B (zh) * | 2012-07-19 | 2015-09-01 | Winbond Electronics Corp | 快閃記憶體元件之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI299549B (en) | 2008-08-01 |
| US7524732B2 (en) | 2009-04-28 |
| US20070272962A1 (en) | 2007-11-29 |
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