TW200739966A - Light-emitting diode and fabrication method thereof - Google Patents

Light-emitting diode and fabrication method thereof

Info

Publication number
TW200739966A
TW200739966A TW096104663A TW96104663A TW200739966A TW 200739966 A TW200739966 A TW 200739966A TW 096104663 A TW096104663 A TW 096104663A TW 96104663 A TW96104663 A TW 96104663A TW 200739966 A TW200739966 A TW 200739966A
Authority
TW
Taiwan
Prior art keywords
light
emitting
electrode
emitting diode
transparent substrate
Prior art date
Application number
TW096104663A
Other languages
Chinese (zh)
Other versions
TWI373863B (en
Inventor
Masao Arimitsu
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006030475A external-priority patent/JP5019755B2/en
Priority claimed from JP2006032028A external-priority patent/JP5019756B2/en
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200739966A publication Critical patent/TW200739966A/en
Application granted granted Critical
Publication of TWI373863B publication Critical patent/TWI373863B/en

Links

Abstract

A light-emitting diode (10) has a light-extracting surface and includes a transparent substrate (14), a compound semiconductor layer (13) bonded to the transparent substrate, a light-emitting part (12) contained in the compound semiconductor layer, a light-emitting layer (133) contained in the light-emitting part and formed of (AlXGa1-X)YIn1-YP (0 ≤ X ≤ 1, 0 < Y < 1), a first electrode (15) and a second electrode (16) of different polarities provided on a surface of the light-emitting diode opposite the light-extracting surface, and a reflecting metal film (17) formed on the first electrode. The transparent substrate has a first side face (142) virtually perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) oblique to the light-emitting surface on a side distant from the light-emitting layer. The first and second electrodes are mounted respectively on electrode terminals (43, 44).
TW96104663A 2006-02-08 2007-02-08 Method for the production of light-emitting diode TWI373863B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006030475A JP5019755B2 (en) 2006-02-08 2006-02-08 Light emitting diode and manufacturing method thereof
JP2006032028A JP5019756B2 (en) 2006-02-09 2006-02-09 Light emitting diode and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200739966A true TW200739966A (en) 2007-10-16
TWI373863B TWI373863B (en) 2012-10-01

Family

ID=40025373

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96104663A TWI373863B (en) 2006-02-08 2007-02-08 Method for the production of light-emitting diode

Country Status (2)

Country Link
KR (1) KR100983841B1 (en)
TW (1) TWI373863B (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3776824B2 (en) 2002-04-05 2006-05-17 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
DE10253911A1 (en) 2002-09-30 2004-04-08 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component and method for its production
US6784460B2 (en) 2002-10-10 2004-08-31 Agilent Technologies, Inc. Chip shaping for flip-chip light emitting diode
JP2006066518A (en) 2004-08-25 2006-03-09 Sharp Corp Semiconductor light-emitting element and method of manufacturing the same

Also Published As

Publication number Publication date
KR100983841B1 (en) 2010-09-27
TWI373863B (en) 2012-10-01
KR20080085919A (en) 2008-09-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees