TW200739966A - Light-emitting diode and fabrication method thereof - Google Patents
Light-emitting diode and fabrication method thereofInfo
- Publication number
- TW200739966A TW200739966A TW096104663A TW96104663A TW200739966A TW 200739966 A TW200739966 A TW 200739966A TW 096104663 A TW096104663 A TW 096104663A TW 96104663 A TW96104663 A TW 96104663A TW 200739966 A TW200739966 A TW 200739966A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- emitting
- electrode
- emitting diode
- transparent substrate
- Prior art date
Links
Abstract
A light-emitting diode (10) has a light-extracting surface and includes a transparent substrate (14), a compound semiconductor layer (13) bonded to the transparent substrate, a light-emitting part (12) contained in the compound semiconductor layer, a light-emitting layer (133) contained in the light-emitting part and formed of (AlXGa1-X)YIn1-YP (0 ≤ X ≤ 1, 0 < Y < 1), a first electrode (15) and a second electrode (16) of different polarities provided on a surface of the light-emitting diode opposite the light-extracting surface, and a reflecting metal film (17) formed on the first electrode. The transparent substrate has a first side face (142) virtually perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) oblique to the light-emitting surface on a side distant from the light-emitting layer. The first and second electrodes are mounted respectively on electrode terminals (43, 44).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006030475A JP5019755B2 (en) | 2006-02-08 | 2006-02-08 | Light emitting diode and manufacturing method thereof |
JP2006032028A JP5019756B2 (en) | 2006-02-09 | 2006-02-09 | Light emitting diode and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200739966A true TW200739966A (en) | 2007-10-16 |
TWI373863B TWI373863B (en) | 2012-10-01 |
Family
ID=40025373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96104663A TWI373863B (en) | 2006-02-08 | 2007-02-08 | Method for the production of light-emitting diode |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100983841B1 (en) |
TW (1) | TWI373863B (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3776824B2 (en) | 2002-04-05 | 2006-05-17 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
DE10253911A1 (en) | 2002-09-30 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component and method for its production |
US6784460B2 (en) | 2002-10-10 | 2004-08-31 | Agilent Technologies, Inc. | Chip shaping for flip-chip light emitting diode |
JP2006066518A (en) | 2004-08-25 | 2006-03-09 | Sharp Corp | Semiconductor light-emitting element and method of manufacturing the same |
-
2007
- 2007-02-06 KR KR1020087020027A patent/KR100983841B1/en active IP Right Grant
- 2007-02-08 TW TW96104663A patent/TWI373863B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100983841B1 (en) | 2010-09-27 |
TWI373863B (en) | 2012-10-01 |
KR20080085919A (en) | 2008-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |