TW200739891A - Phase-changeable memory device and method for fabricating the same - Google Patents

Phase-changeable memory device and method for fabricating the same

Info

Publication number
TW200739891A
TW200739891A TW096102495A TW96102495A TW200739891A TW 200739891 A TW200739891 A TW 200739891A TW 096102495 A TW096102495 A TW 096102495A TW 96102495 A TW96102495 A TW 96102495A TW 200739891 A TW200739891 A TW 200739891A
Authority
TW
Taiwan
Prior art keywords
phase
changeable
memory device
fabricating
layer
Prior art date
Application number
TW096102495A
Other languages
Chinese (zh)
Other versions
TWI344691B (en
Inventor
Jeong-Hee Park
Ju-Chul Park
Jun-Soo Bae
Bong-Jin Kuh
Yong-Ho Ha
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200739891A publication Critical patent/TW200739891A/en
Application granted granted Critical
Publication of TWI344691B publication Critical patent/TWI344691B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides

Landscapes

  • Semiconductor Memories (AREA)

Abstract

A phase-changeable memory device and a method for fabricating the same are provided. The phase-changeable memory device includes a first phase-changeable layer and a second phase-changeable layer on the first phase-changeable layer. The first phase-changeable layer is doped with nitrogen at a first concentration and the second phase-changeable layer is doped with nitrogen at a second concentration higher than the first concentration. An adhesive layer is formed on the second phase-changeable layer. The second phase-changeable layer prevents the elements of the adhesive layer from diffusing into the first phase-changeable layer.
TW096102495A 2006-01-27 2007-01-23 Phase-changeable memory device and method for fabricating the same TWI344691B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060008674A KR100706805B1 (en) 2006-01-27 2006-01-27 Phase-changeable memory device and method for fabricating the same

Publications (2)

Publication Number Publication Date
TW200739891A true TW200739891A (en) 2007-10-16
TWI344691B TWI344691B (en) 2011-07-01

Family

ID=38161685

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102495A TWI344691B (en) 2006-01-27 2007-01-23 Phase-changeable memory device and method for fabricating the same

Country Status (2)

Country Link
KR (1) KR100706805B1 (en)
TW (1) TWI344691B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101604041B1 (en) 2009-08-27 2016-03-16 삼성전자주식회사 Non-volatile memory device having phase-change material
KR101436924B1 (en) 2013-04-11 2014-09-03 한국과학기술연구원 Ovonic threshold switch device having n-doped chalcogenide material and manufacture method thereof
KR102371295B1 (en) 2015-02-16 2022-03-07 삼성전자주식회사 Layer structure comprising diffusion barrier layer and method of manufacturing the same
KR102395814B1 (en) * 2020-09-10 2022-05-06 연세대학교 산학협력단 Selection device and memory device comprising the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4025527B2 (en) 2000-10-27 2007-12-19 松下電器産業株式会社 Memory, writing device, reading device and method thereof
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
KR100543445B1 (en) * 2003-03-04 2006-01-23 삼성전자주식회사 Phase change memory device and method of forming the same

Also Published As

Publication number Publication date
KR100706805B1 (en) 2007-04-12
TWI344691B (en) 2011-07-01

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