TW200737385A - Inspection method of semiconductor doping process - Google Patents

Inspection method of semiconductor doping process

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Publication number
TW200737385A
TW200737385A TW095109641A TW95109641A TW200737385A TW 200737385 A TW200737385 A TW 200737385A TW 095109641 A TW095109641 A TW 095109641A TW 95109641 A TW95109641 A TW 95109641A TW 200737385 A TW200737385 A TW 200737385A
Authority
TW
Taiwan
Prior art keywords
doping process
semiconductor
semiconductor doping
inspection method
precipitation
Prior art date
Application number
TW095109641A
Other languages
Chinese (zh)
Other versions
TWI275155B (en
Inventor
Rong-Jun Huang
Hua-Shu Xu
Original Assignee
Univ Nat Cheng Kung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Cheng Kung filed Critical Univ Nat Cheng Kung
Priority to TW95109641A priority Critical patent/TWI275155B/en
Application granted granted Critical
Publication of TWI275155B publication Critical patent/TWI275155B/en
Publication of TW200737385A publication Critical patent/TW200737385A/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

The present invention provides an inspection method of semiconductor doping process, which is applied in inspecting whether there is precipitation of metal cluster or not in the semiconductor doping process. The inspection method comprises the following steps: (A) measure the impedance spectrum of semiconductors by a high-frequency complex impedance analyzer. (B) Pick the logarithm of the real part of the impedance spectrum as the horizontal axis, and pick the logarithm of the imaginary part of the impedance spectrum as the vertical axis, and find the characteristic slope. (C) If the characteristic slope is 0.5, then the semiconductor has only one kind of dielectric delay generated, i.e. there is no precipitation of metal cluster in the semiconductor doping process. Using the method provided by the present invention, it is simple, fast, and reliable to inspect whether there is precipitation of metal nanocluster or not in the semiconductor, so as to distinguish the quality of the semiconductor doping process.
TW95109641A 2006-03-21 2006-03-21 Inspection method of semiconductor doping process TWI275155B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95109641A TWI275155B (en) 2006-03-21 2006-03-21 Inspection method of semiconductor doping process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95109641A TWI275155B (en) 2006-03-21 2006-03-21 Inspection method of semiconductor doping process

Publications (2)

Publication Number Publication Date
TWI275155B TWI275155B (en) 2007-03-01
TW200737385A true TW200737385A (en) 2007-10-01

Family

ID=38624291

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95109641A TWI275155B (en) 2006-03-21 2006-03-21 Inspection method of semiconductor doping process

Country Status (1)

Country Link
TW (1) TWI275155B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI649959B (en) * 2018-01-16 2019-02-01 東海大學 Method for analyzing semiconductor components with multiple interfaces

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114720808B (en) * 2022-06-09 2022-09-02 国网江西省电力有限公司电力科学研究院 Nondestructive testing and positioning method for quality of conductor in middle section of cable

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI649959B (en) * 2018-01-16 2019-02-01 東海大學 Method for analyzing semiconductor components with multiple interfaces

Also Published As

Publication number Publication date
TWI275155B (en) 2007-03-01

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