TW200736845A - Mask and exposure method for producing high depth photoresist - Google Patents

Mask and exposure method for producing high depth photoresist

Info

Publication number
TW200736845A
TW200736845A TW095109931A TW95109931A TW200736845A TW 200736845 A TW200736845 A TW 200736845A TW 095109931 A TW095109931 A TW 095109931A TW 95109931 A TW95109931 A TW 95109931A TW 200736845 A TW200736845 A TW 200736845A
Authority
TW
Taiwan
Prior art keywords
mask
photoresist
exposure method
high depth
producing high
Prior art date
Application number
TW095109931A
Other languages
Chinese (zh)
Other versions
TWI326003B (en
Inventor
Chao-Heng Chien
Hui-Min You
Original Assignee
Kuender & Co Ltd
Lenghways Technology Co Ltd
Tatung Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuender & Co Ltd, Lenghways Technology Co Ltd, Tatung Co filed Critical Kuender & Co Ltd
Priority to TW095109931A priority Critical patent/TW200736845A/en
Publication of TW200736845A publication Critical patent/TW200736845A/en
Application granted granted Critical
Publication of TWI326003B publication Critical patent/TWI326003B/zh

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

This invention provides a mask and its exposure method, in which the mask comprises a mask main body and a protrusion section. The protrusion section is formed at one side of the mask main body. When the mask covers a structure substrate coated with a photoresist thereon, the protrusion section inscribes a photoresist patter with depth. A high depth photoresist pattern is formed after carrying out an exposure and then the residual photoresist is removed by using a chemical method.
TW095109931A 2006-03-22 2006-03-22 Mask and exposure method for producing high depth photoresist TW200736845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095109931A TW200736845A (en) 2006-03-22 2006-03-22 Mask and exposure method for producing high depth photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095109931A TW200736845A (en) 2006-03-22 2006-03-22 Mask and exposure method for producing high depth photoresist

Publications (2)

Publication Number Publication Date
TW200736845A true TW200736845A (en) 2007-10-01
TWI326003B TWI326003B (en) 2010-06-11

Family

ID=45074302

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109931A TW200736845A (en) 2006-03-22 2006-03-22 Mask and exposure method for producing high depth photoresist

Country Status (1)

Country Link
TW (1) TW200736845A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014153889A1 (en) * 2013-03-26 2014-10-02 北京京东方光电科技有限公司 Ultraviolet mask plate and preparation method therefor, and curing method for sealant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014153889A1 (en) * 2013-03-26 2014-10-02 北京京东方光电科技有限公司 Ultraviolet mask plate and preparation method therefor, and curing method for sealant

Also Published As

Publication number Publication date
TWI326003B (en) 2010-06-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees