TW200736375A - Compositions for chemical mechanical polishing silicon dioxide and silicon nitride - Google Patents
Compositions for chemical mechanical polishing silicon dioxide and silicon nitrideInfo
- Publication number
- TW200736375A TW200736375A TW096105646A TW96105646A TW200736375A TW 200736375 A TW200736375 A TW 200736375A TW 096105646 A TW096105646 A TW 096105646A TW 96105646 A TW96105646 A TW 96105646A TW 200736375 A TW200736375 A TW 200736375A
- Authority
- TW
- Taiwan
- Prior art keywords
- compositions
- silicon nitride
- mechanical polishing
- chemical mechanical
- silicon dioxide
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000000377 silicon dioxide Substances 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 abstract 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 abstract 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 abstract 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 1
- 150000001767 cationic compounds Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/372,321 US20070210278A1 (en) | 2006-03-08 | 2006-03-08 | Compositions for chemical mechanical polishing silicon dioxide and silicon nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200736375A true TW200736375A (en) | 2007-10-01 |
Family
ID=38336245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096105646A TW200736375A (en) | 2006-03-08 | 2007-02-15 | Compositions for chemical mechanical polishing silicon dioxide and silicon nitride |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20070210278A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2007273973A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20070092109A (cg-RX-API-DMAC7.html) |
| CN (1) | CN101054498A (cg-RX-API-DMAC7.html) |
| DE (1) | DE102007008997A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2898361A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW200736375A (cg-RX-API-DMAC7.html) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008182179A (ja) * | 2006-12-27 | 2008-08-07 | Hitachi Chem Co Ltd | 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品 |
| DE102006061891A1 (de) * | 2006-12-28 | 2008-07-03 | Basf Se | Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid |
| EP2329519B1 (en) * | 2008-09-26 | 2013-10-23 | Rhodia Opérations | Abrasive compositions for chemical mechanical polishing and methods for using same |
| EP2500929B1 (en) * | 2009-11-11 | 2018-06-20 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and polishing method for substrate using same |
| CN102464946B (zh) * | 2010-11-19 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| EP2858097B1 (en) | 2012-05-30 | 2019-02-27 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and chemical mechanical polishing method |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP6268069B2 (ja) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
| KR20170134963A (ko) * | 2015-03-30 | 2017-12-07 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 처리 조성물, 화학 기계 연마 방법 및 세정 방법 |
| JP6886469B2 (ja) * | 2015-12-22 | 2021-06-16 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | 化学機械研磨後の洗浄組成物 |
| CN108117840B (zh) * | 2016-11-29 | 2021-09-21 | 安集微电子科技（上海）股份有限公司 | 一种氮化硅化学机械抛光液 |
| US10954411B2 (en) * | 2019-05-16 | 2021-03-23 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide |
| CN120098551A (zh) * | 2023-11-29 | 2025-06-06 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光组合物 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3672493B2 (ja) * | 1998-02-24 | 2005-07-20 | 昭和電工株式会社 | 半導体装置研磨用研磨材組成物及びそれを用いた半導体装置の製造方法 |
| GB9924502D0 (en) * | 1999-10-15 | 1999-12-15 | Biocompatibles Ltd | Polymer blend materials |
| US6641632B1 (en) * | 2002-11-18 | 2003-11-04 | International Business Machines Corporation | Polishing compositions and use thereof |
| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
| JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| US20070176141A1 (en) * | 2006-01-30 | 2007-08-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
-
2006
- 2006-03-08 US US11/372,321 patent/US20070210278A1/en not_active Abandoned
-
2007
- 2007-02-15 TW TW096105646A patent/TW200736375A/zh unknown
- 2007-02-23 DE DE102007008997A patent/DE102007008997A1/de not_active Withdrawn
- 2007-03-02 KR KR1020070020879A patent/KR20070092109A/ko not_active Withdrawn
- 2007-03-07 CN CNA2007100877140A patent/CN101054498A/zh active Pending
- 2007-03-08 JP JP2007058028A patent/JP2007273973A/ja active Pending
- 2007-03-08 FR FR0753722A patent/FR2898361A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE102007008997A1 (de) | 2007-09-13 |
| JP2007273973A (ja) | 2007-10-18 |
| FR2898361A1 (fr) | 2007-09-14 |
| US20070210278A1 (en) | 2007-09-13 |
| CN101054498A (zh) | 2007-10-17 |
| KR20070092109A (ko) | 2007-09-12 |
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