TW200735349A - Semiconductor devices having plated contacts, and methods of manufacturing the same - Google Patents
Semiconductor devices having plated contacts, and methods of manufacturing the sameInfo
- Publication number
- TW200735349A TW200735349A TW095105977A TW95105977A TW200735349A TW 200735349 A TW200735349 A TW 200735349A TW 095105977 A TW095105977 A TW 095105977A TW 95105977 A TW95105977 A TW 95105977A TW 200735349 A TW200735349 A TW 200735349A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- contact
- semiconductor structure
- mask
- manufacturing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/064,535 US7563713B2 (en) | 2005-02-23 | 2005-02-23 | Semiconductor devices having plated contacts, and methods of manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200735349A true TW200735349A (en) | 2007-09-16 |
Family
ID=36295448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095105977A TW200735349A (en) | 2005-02-23 | 2006-02-22 | Semiconductor devices having plated contacts, and methods of manufacturing the same |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7563713B2 (zh) |
| TW (1) | TW200735349A (zh) |
| WO (1) | WO2006091698A1 (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060267146A1 (en) * | 2005-05-19 | 2006-11-30 | Polar Semiconductor, Inc. | Multilayered emitter window for bipolar junction transistor |
| EP1950326A1 (en) * | 2007-01-29 | 2008-07-30 | Interuniversitair Microelektronica Centrum | Method for removal of bulk metal contamination from III-V semiconductor substrates |
| US8372744B2 (en) * | 2007-04-20 | 2013-02-12 | International Business Machines Corporation | Fabricating a contact rhodium structure by electroplating and electroplating composition |
| JP5759091B2 (ja) * | 2009-01-30 | 2015-08-05 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体記憶装置及び半導体記憶装置の製造方法 |
| US8679969B2 (en) | 2011-08-02 | 2014-03-25 | Teledyne Scientific & Imaging, Llc | System for self-aligned contacts |
| US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
| KR101944337B1 (ko) | 2012-06-14 | 2019-02-01 | 스카이워크스 솔루션즈, 인코포레이티드 | 공정 보상된 hbt 전력 증폭기 바이어스 회로 및 방법 |
| KR20190058711A (ko) | 2012-06-14 | 2019-05-29 | 스카이워크스 솔루션즈, 인코포레이티드 | 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법 |
| US11410928B2 (en) * | 2018-06-07 | 2022-08-09 | Intel Corporation | Device layer interconnects |
| US11276641B1 (en) * | 2020-01-06 | 2022-03-15 | Rockwell Collins, Inc. | Conformal multi-plane material deposition |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4586988A (en) * | 1983-08-19 | 1986-05-06 | Energy Conversion Devices, Inc. | Method of forming an electrically conductive member |
| US4624749A (en) * | 1985-09-03 | 1986-11-25 | Harris Corporation | Electrodeposition of submicrometer metallic interconnect for integrated circuits |
| US5147740A (en) * | 1990-08-09 | 1992-09-15 | Rockwell International Corporation | Structure and process for fabricating conductive patterns having sub-half micron dimensions |
| US5151168A (en) | 1990-09-24 | 1992-09-29 | Micron Technology, Inc. | Process for metallizing integrated circuits with electrolytically-deposited copper |
| US6288442B1 (en) | 1998-09-10 | 2001-09-11 | Micron Technology, Inc. | Integrated circuit with oxidation-resistant polymeric layer |
| JP2002033484A (ja) * | 2000-07-18 | 2002-01-31 | Mitsubishi Electric Corp | 半導体装置 |
-
2005
- 2005-02-23 US US11/064,535 patent/US7563713B2/en active Active
-
2006
- 2006-02-21 WO PCT/US2006/006340 patent/WO2006091698A1/en active Application Filing
- 2006-02-22 TW TW095105977A patent/TW200735349A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20060186543A1 (en) | 2006-08-24 |
| WO2006091698A1 (en) | 2006-08-31 |
| US7563713B2 (en) | 2009-07-21 |
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