TW200733411A - Optoelectronic device having Ohmic contact property - Google Patents

Optoelectronic device having Ohmic contact property

Info

Publication number
TW200733411A
TW200733411A TW095105453A TW95105453A TW200733411A TW 200733411 A TW200733411 A TW 200733411A TW 095105453 A TW095105453 A TW 095105453A TW 95105453 A TW95105453 A TW 95105453A TW 200733411 A TW200733411 A TW 200733411A
Authority
TW
Taiwan
Prior art keywords
ohmic contact
contact property
layer
type
optoelectronic device
Prior art date
Application number
TW095105453A
Other languages
Chinese (zh)
Other versions
TWI297218B (en
Inventor
Jun-Dar Hwang
kun-hong Xie
Original Assignee
Jun-Dar Hwang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jun-Dar Hwang filed Critical Jun-Dar Hwang
Priority to TW095105453A priority Critical patent/TW200733411A/en
Publication of TW200733411A publication Critical patent/TW200733411A/en
Application granted granted Critical
Publication of TWI297218B publication Critical patent/TWI297218B/zh

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Disclosed herein is an optoelectronic device having Ohmic contact property, which can be grown on a N-type silicon substrate in order to develop a single crystal p-type Si0.8Ge0.2 strain layer and an indium tin oxide (ITO) layer. The present invention discloses a good Ohmic contact property of low characteristic contact resistance between the single crystal p-type Si0.8Ge0.2 strain layer and the ITO layer. Moreover, annealing is not required during the entire manufacturing process so as to shorten the manufacturing time effectively. Therefore, the invention is well suited for fabricating highly efficient near infrared (NIR) optoelectronic devices when incorporated with silicon and germanium (SiGe) materials.
TW095105453A 2006-02-17 2006-02-17 Optoelectronic device having Ohmic contact property TW200733411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095105453A TW200733411A (en) 2006-02-17 2006-02-17 Optoelectronic device having Ohmic contact property

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095105453A TW200733411A (en) 2006-02-17 2006-02-17 Optoelectronic device having Ohmic contact property

Publications (2)

Publication Number Publication Date
TW200733411A true TW200733411A (en) 2007-09-01
TWI297218B TWI297218B (en) 2008-05-21

Family

ID=45069016

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105453A TW200733411A (en) 2006-02-17 2006-02-17 Optoelectronic device having Ohmic contact property

Country Status (1)

Country Link
TW (1) TW200733411A (en)

Also Published As

Publication number Publication date
TWI297218B (en) 2008-05-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees