TW200733273A - Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of frabricating the same - Google Patents

Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of frabricating the same

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Publication number
TW200733273A
TW200733273A TW095140824A TW95140824A TW200733273A TW 200733273 A TW200733273 A TW 200733273A TW 095140824 A TW095140824 A TW 095140824A TW 95140824 A TW95140824 A TW 95140824A TW 200733273 A TW200733273 A TW 200733273A
Authority
TW
Taiwan
Prior art keywords
solder bump
semiconductor chip
inter
metallic compound
same
Prior art date
Application number
TW095140824A
Other languages
Chinese (zh)
Other versions
TWI338344B (en
Inventor
In-Soo Kang
Joon-Young Choi
Original Assignee
Nepes Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nepes Corp filed Critical Nepes Corp
Publication of TW200733273A publication Critical patent/TW200733273A/en
Application granted granted Critical
Publication of TWI338344B publication Critical patent/TWI338344B/en

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Abstract

A semiconductor chip having a solder bump and a method of fabricating the same are provided. Conventionally, an inter-metallic compound (IMC) unexpectedly grows at an interface of the solder bump by means of heat generated during operation of the semiconductor chip, thereby weakening mechanical property of the semiconductor chip. To solve this drawback, the semiconductor chip includes at least one metal adhesion layer formed on an electrode pad of the semiconductor chip, an interlayer isolation layer formed on the metal adhesion layer, at least one penetration layer formed on the interlayer isolation layer and penetrating into the solder bump, and the solder bump formed on the penetration layer. Thereby, materials of the penetration layer penetrate into the solder bump to change the solder bump into a multi-component solder bump, so that the growth of the IMC is suppressed, and the reliability of the semiconductor chip can be improved.
TW095140824A 2006-02-20 2006-11-03 Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of frabricating the same TWI338344B (en)

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TWI466204B (en) * 2011-11-08 2014-12-21 Taiwan Semiconductor Mfg Co Ltd Semiconductor device and method for fabricating the same

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US7868453B2 (en) * 2008-02-15 2011-01-11 International Business Machines Corporation Solder interconnect pads with current spreading layers
US9035459B2 (en) * 2009-04-10 2015-05-19 International Business Machines Corporation Structures for improving current carrying capability of interconnects and methods of fabricating the same
TWI430377B (en) 2011-08-09 2014-03-11 Univ Nat Chiao Tung Method for inhibiting growth of intermetallic compounds
KR102307062B1 (en) 2014-11-10 2021-10-05 삼성전자주식회사 Semiconductor device, semiconductor device package and lighting apparatus
TWI572436B (en) * 2014-12-19 2017-03-01 中原大學 A soldering structure and process of making the same
WO2016137452A1 (en) * 2015-02-25 2016-09-01 Intel Corporation Surface finishes for interconnection pads in microelectronic structures
US11302537B2 (en) 2020-04-01 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure with conductive adhesive layer and method for forming the same

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KR20000019151A (en) * 1998-09-09 2000-04-06 윤종용 Semiconductor chip having solder bump and fabrication method for the same
KR20010061775A (en) * 1999-12-29 2001-07-07 이수남 wafer level package and method of fabricating the same
TW471146B (en) * 2000-12-29 2002-01-01 Apack Technologies Inc Bump fabrication method
JP4656275B2 (en) * 2001-01-15 2011-03-23 日本電気株式会社 Manufacturing method of semiconductor device
JP2003037129A (en) * 2001-07-25 2003-02-07 Rohm Co Ltd Semiconductor device and method of manufacturing the same
CN100382262C (en) * 2002-06-21 2008-04-16 富士通株式会社 Semiconductor device and its producing method
JP2004207685A (en) * 2002-12-23 2004-07-22 Samsung Electronics Co Ltd Manufacturing method for unleaded solder bump
KR100534108B1 (en) * 2002-12-23 2005-12-08 삼성전자주식회사 Method of fabricating Pb-free solder bumps
JP4066952B2 (en) * 2004-01-09 2008-03-26 株式会社村田製作所 Electronic component element, electronic component, and communication device
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TWI466204B (en) * 2011-11-08 2014-12-21 Taiwan Semiconductor Mfg Co Ltd Semiconductor device and method for fabricating the same
US9099396B2 (en) 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
US9953891B2 (en) 2011-11-08 2018-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming post-passivation interconnect structure
TWI452142B (en) * 2011-11-22 2014-09-11 中原大學 Tin and antimony ternary compounds and their application and form

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