TW200732636A - EMI rejection for temperature sensing diodes - Google Patents

EMI rejection for temperature sensing diodes

Info

Publication number
TW200732636A
TW200732636A TW095132630A TW95132630A TW200732636A TW 200732636 A TW200732636 A TW 200732636A TW 095132630 A TW095132630 A TW 095132630A TW 95132630 A TW95132630 A TW 95132630A TW 200732636 A TW200732636 A TW 200732636A
Authority
TW
Taiwan
Prior art keywords
emi
semiconductor device
remotely located
terminals
located semiconductor
Prior art date
Application number
TW095132630A
Other languages
English (en)
Other versions
TWI394939B (zh
Inventor
Scott C Mcleod
Original Assignee
Standard Microsyst Smc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Microsyst Smc filed Critical Standard Microsyst Smc
Publication of TW200732636A publication Critical patent/TW200732636A/zh
Application granted granted Critical
Publication of TWI394939B publication Critical patent/TWI394939B/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00Details of thermometers not specially adapted for particular types of thermometer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/02Means for indicating or recording specially adapted for thermometers
    • G01K1/024Means for indicating or recording specially adapted for thermometers for remote indication
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Measurement Of Current Or Voltage (AREA)
TW095132630A 2005-09-02 2006-09-01 溫度量測系統及方法 TWI394939B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/219,151 US7622903B2 (en) 2005-09-02 2005-09-02 EMI rejection for temperature sensing diodes

Publications (2)

Publication Number Publication Date
TW200732636A true TW200732636A (en) 2007-09-01
TWI394939B TWI394939B (zh) 2013-05-01

Family

ID=37831039

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132630A TWI394939B (zh) 2005-09-02 2006-09-01 溫度量測系統及方法

Country Status (2)

Country Link
US (1) US7622903B2 (zh)
TW (1) TWI394939B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7429129B2 (en) * 2005-02-28 2008-09-30 Standard Microsystems Corporation Proportional settling time adjustment for diode voltage and temperature measurements dependent on forced level current
US7405552B2 (en) * 2006-01-04 2008-07-29 Micron Technology, Inc. Semiconductor temperature sensor with high sensitivity
US9335223B2 (en) * 2012-09-05 2016-05-10 Texas Instruments Incorporated Circuits and methods for determining the temperature of a transistor
DE112013006869B4 (de) * 2013-05-17 2019-05-23 Intel Corporation (N.D.Ges.D. Staates Delaware) Chipinterner Versorgungsgenerator unter Verwendung einer dynamischen Schaltungsreferenz
US9495049B2 (en) * 2014-05-18 2016-11-15 Himax Technologies Limited Electronic device with touch sensitive functionality

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016763A (en) * 1970-02-24 1977-04-12 Rosemount Inc. Two wire current transmitter responsive to a resistive temperature sensor input signal
US3672215A (en) 1969-09-08 1972-06-27 Worth Well Surveys Inc Apparatus employing diode junction means for measuring subterranean temperatures
US3679992A (en) 1971-06-01 1972-07-25 Gen Electric Tunnel diode oscillator fm temperature sensor
DE2256197C2 (de) * 1972-11-16 1974-03-07 Danfoss A/S, Nordborg (Daenemark) Meßwertumformer mit einem Kompensationsbrückenkreis
US4220041A (en) * 1977-04-07 1980-09-02 Potter Bronson M Alien liquid detector and control
US4228684A (en) 1979-06-04 1980-10-21 General Motors Corporation Remote temperature measuring system with semiconductor junction sensor
DD244112A1 (de) 1985-12-23 1987-03-25 Magdeburg Getraenkemasch Vorrichtung zum ueberfuehren von gegenstaenden
WO1991006839A1 (de) 1989-11-04 1991-05-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierbare temperatursensorschaltung
US5195827A (en) 1992-02-04 1993-03-23 Analog Devices, Inc. Multiple sequential excitation temperature sensing method and apparatus
US5419637A (en) 1993-11-03 1995-05-30 Santa Barbara Research Center Method and apparatus for measuring temperature using an inherently calibrated p-n junction-type temperature sensor
WO1995020751A1 (de) 1994-01-26 1995-08-03 Horst Ahlers Temperatursensor
GB2292221B (en) 1994-08-09 1998-05-27 Texas Instruments Ltd Hottest temperature sensor
US5859558A (en) * 1997-04-11 1999-01-12 Raytheon Company Low voltage analog front end
US5982221A (en) 1997-08-13 1999-11-09 Analog Devices, Inc. Switched current temperature sensor circuit with compounded ΔVBE
US6008685A (en) * 1998-03-25 1999-12-28 Mosaic Design Labs, Inc. Solid state temperature measurement
US6097239A (en) * 1999-02-10 2000-08-01 Analog Devices, Inc. Decoupled switched current temperature circuit with compounded ΔV be
US6169442B1 (en) 1999-04-13 2001-01-02 Analog Devices, Inc. IC monitoring chip and a method for monitoring temperature of a component in a computer
US6554470B2 (en) 2000-11-07 2003-04-29 Maxim Integrated Products, Inc. M-level diode junction temperature measurement method cancelling series and parallel parasitic influences
US6554469B1 (en) * 2001-04-17 2003-04-29 Analog Devices, Inc. Four current transistor temperature sensor and method
US6480127B1 (en) * 2001-09-27 2002-11-12 National Semiconductor Corporation Input sub-ranging converter system for sampling semiconductor temperature sensors
US6847319B1 (en) 2003-07-22 2005-01-25 Standard Microsystems Corporation Temperature-to-digital converter
JP2005134145A (ja) * 2003-10-28 2005-05-26 Seiko Instruments Inc 温度センサ回路
US7010440B1 (en) * 2003-11-25 2006-03-07 Analog Devices, Inc. Method and a measuring circuit for determining temperature from a PN junction temperature sensor, and a temperature sensing circuit comprising the measuring circuit and a PN junction
US7112948B2 (en) * 2004-01-30 2006-09-26 Analog Devices, Inc. Voltage source circuit with selectable temperature independent and temperature dependent voltage outputs
US7030793B2 (en) * 2004-02-18 2006-04-18 Standard Microsystems Corporation Accurate testing of temperature measurement unit
US7429129B2 (en) 2005-02-28 2008-09-30 Standard Microsystems Corporation Proportional settling time adjustment for diode voltage and temperature measurements dependent on forced level current

Also Published As

Publication number Publication date
US7622903B2 (en) 2009-11-24
US20070055473A1 (en) 2007-03-08
TWI394939B (zh) 2013-05-01

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