TW200732496A - Method of manufacturing silicon-containing film and method of reducing number of particles - Google Patents

Method of manufacturing silicon-containing film and method of reducing number of particles

Info

Publication number
TW200732496A
TW200732496A TW095106262A TW95106262A TW200732496A TW 200732496 A TW200732496 A TW 200732496A TW 095106262 A TW095106262 A TW 095106262A TW 95106262 A TW95106262 A TW 95106262A TW 200732496 A TW200732496 A TW 200732496A
Authority
TW
Taiwan
Prior art keywords
containing film
particles
manufacturing silicon
reducing number
silicon
Prior art date
Application number
TW095106262A
Other languages
English (en)
Other versions
TWI304098B (en
Inventor
Che-Hung Liu
Po-Lun Cheng
Hwei-Lin Chuang
Chun-An Lin
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW95106262A priority Critical patent/TWI304098B/zh
Publication of TW200732496A publication Critical patent/TW200732496A/zh
Application granted granted Critical
Publication of TWI304098B publication Critical patent/TWI304098B/zh

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
TW95106262A 2006-02-24 2006-02-24 Method of manufacturing silicon-containing film and method of reducing number of particles TWI304098B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95106262A TWI304098B (en) 2006-02-24 2006-02-24 Method of manufacturing silicon-containing film and method of reducing number of particles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95106262A TWI304098B (en) 2006-02-24 2006-02-24 Method of manufacturing silicon-containing film and method of reducing number of particles

Publications (2)

Publication Number Publication Date
TW200732496A true TW200732496A (en) 2007-09-01
TWI304098B TWI304098B (en) 2008-12-11

Family

ID=45070864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95106262A TWI304098B (en) 2006-02-24 2006-02-24 Method of manufacturing silicon-containing film and method of reducing number of particles

Country Status (1)

Country Link
TW (1) TWI304098B (zh)

Also Published As

Publication number Publication date
TWI304098B (en) 2008-12-11

Similar Documents

Publication Publication Date Title
TW200729344A (en) Amine-free deposition of metal-nitride films
WO2007109491A3 (en) Selective deposition
TW200943419A (en) Low wet etch rate silicon nitride film
TW200605226A (en) Process for titanium nitride removal
TW200603225A (en) Method of manufacturing carbon nanotube and plasma cvd(chemical vapor deposition) apparatus for implementing thereof
WO2007092130A3 (en) Dry etch and epitaxial deposition process and apparatus
TW200505280A (en) Manufacturing method and manufacturing apparatus of organic thin film
TW200733196A (en) Vaporizer, semiconductor manufacturing apparatus and manufacturing method thereof
WO2006007313A3 (en) Improving water-barrier performance of an encapsulating film
TNSN07064A1 (en) Atmospheric pressure chemical vapor deposition
WO2012044622A3 (en) Low-temperature dielectric film formation by chemical vapor deposition
WO2008078502A1 (ja) 成膜装置および成膜方法
WO2010105585A8 (de) Substratbearbeitungsanlage und substratbearbeitungsverfahren
WO2010054184A3 (en) Chemical vapor deposition with elevated temperature gas injection
TW200743677A (en) Process for preparing a nano-carbon material
WO2008008098A3 (en) Plasma deposition apparatus and method for making polycrystalline silicon
TW200618066A (en) Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
WO2011029096A3 (en) Plasma enhanced chemical vapor deposition apparatus
MX336541B (es) Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.
WO2009122113A3 (fr) Procede de production de nanostructures sur un substrat d'oxyde metallique, et dispositif forme de couches minces
WO2012170511A3 (en) Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
TW200717619A (en) Method for passivating at least a part of a substrate surface
WO2004048258A8 (en) Method for forming carbon nanotubes
WO2007053553A3 (en) Method and system for forming a nitrided germanium-containing layer using plasma processing
JP2006519482A5 (zh)