TWI304098B - Method of manufacturing silicon-containing film and method of reducing number of particles - Google Patents

Description

1304098 97-10-23 IX. Description of the invention: [Technical field to which Maoming belongs] The present invention relates to a method for forming a film, and more particularly to a method for forming a film containing a film and a method for reducing the number of particles. [Prior Art] Chemical Vapor Deposition (CVD) is a thin film deposition technique in which a reaction is formed in a solid state and deposited on a surface of a substrate by means of a chemical reaction. In recent years, chemical vapor deposition has become the most important and major thin film deposition tool in semiconductor manufacturing processes. For films prepared for semiconductor devices, whether it is a conductor, a semiconductor, or a dielectric material, chemical gas can be used. The phase deposition method is used for the preparation. Once in the entire semiconductor process, many commonly used materials, whether conductors, semi- & or dielectric materials, are inseparable from the element of r Shi Xi. No;,:: In order to form these materials by chemical vapor deposition, it is necessary to use a reaction gas containing ruthenium as a source of ruthenium. Among them, the most commonly used and most widely used helium-containing gas belongs to methane (seven) lane. However, the process of using decane as a source of ruthenium requires a higher temperature, and the uniformity (Unif〇rmity) of the film containing the ruthenium film is poor. When the semiconductor enters the deep sub-micron process, the reaction/dishness must be further reduced to achieve the purpose of reducing the thermal budget of the process, a month b can be dissociated below the lower reaction temperature. Shi Xi gas, such as disilane or trisiiane, gradually replaces the use of methane. Further, the ruthenium-containing gas such as disilane also has the advantage of increasing the uniformity of the deposited film. 4 1304098 97-10-23 However, in the case of second-hand B, it is easy to use particles such as propane, which are low in temperature. The reaction of the gas phase nucleation in the two reaction chambers causes a decrease in the quality of the film, and the uniformity of the deposited film is deteriorated, resulting in thinness, especially in the present case, which is liable to adhere to the reaction chamber (4). Less tolerance. 4 has entered the nano-scale process, for particle contamination [invention content]

In the method, the purpose of reducing the amount of ^vt is to provide a film containing a stone film, thereby obtaining a gas of good quality H in the reaction chamber.

Applicable to two:: J film supply - a method for reducing the number of particles, the probability of gas phase nucleation in the reaction chamber is proposed by the present invention - the cleanliness of the seed and the reaction chamber. The substrate is placed in a reaction chamber; the method is a method in which a chemical vapor deposition process is first introduced into a gas containing a helium gas to control the formation of an ethylene film on the reaction chamber, and the inclusion body includes, for example, The temperature at which the formation of the above-mentioned stone-containing film of Ershi Xi is substantially Na. ^^, the temperature of the other inner wall of the reaction chamber can be controlled to be substantially 3W. The temperature of the inner wall (and other inner walls) of the square half/twisting reaction chamber is substantially 30. (4) In the method for forming the above-mentioned rhyme-containing film for controlling the cooling device of the reaction chamber, the cut film includes, for example, an oxide 5 1304098 97-10-23 Shi Xi film, a tantalum nitride film, a preparation and a stone film and In the chemical vapor deposition process of metal film ^^溥 film, nitrogen carbonized film, polycrystalline and ashiit: thin, the process is more delicious, at least one of oxygen and fluoride is the reaction gas. In the method of forming the ruthenium film, the substrate can be heated under the enthalpy of heating. The temperature of the heater is controlled, for example, between _DC and 7 qing, and f is formed in the method of forming a thin ruthenium. For example, the type of low school vapor deposition process of the type of ΐ 增强 电 电 电 增强 沉 沉 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或,,: two to reduce the incidence of gas phase nucleation, reduce the number of particles, better film 'and increase the cleanliness of the reaction chamber. In addition, the winter containing bismuth gas, the uniformity of the yttrium-containing film T. Alkane* is proposed by the present invention to reduce the number of particles The method is applicable to a process towel of a film, and the cut film is formed by introducing a gas thickness in a reaction chamber: a gas=product process. The method is, for example, a chemical vapor deposition process to control the inner wall of the reaction chamber. The temperature is substantially 3 〇〇 C. In the above method for reducing the number of particles, the ruthenium-containing gas is, for example, ethane or trioxane. In the above method for reducing the number of particles, the ruthenium-containing film includes, for example, ^ One of the film, the tantalum nitride film, the yttrium oxynitride film, the yttrium carbonitride film, the bismuth film and the ruthenium-containing metal film. In the above method for reducing the number of particles, the other inside of the reaction chamber can be controlled. 1304098 97-10-23 The temperature of the wall is substantially 3 〇. (: The above method for reducing the number of particles, the method of controlling substantially (4) is, for example, controlling the temperature of the reaction chamber to 30 ° C. In the above method for reducing the number of particles, in the method of reducing the number of particles, the chemical product can be introduced into the ammonia gas, the oxygen gas, and the fluoride in the process.

Gas accumulation process, chemical vapor deposition Ϊ == Li chemical phase system or high density plasma chemical vapor deposition _ Cheng. The method for reducing the number of particles proposed by the present invention reduces the temperature of the interior wall of the reaction to reduce the probability of occurrence of nucleation, thereby reducing the number of particles, thereby not only Obtaining a better quality film can also increase the inverse = clarity. Furthermore, when the above-mentioned containing material, the second material, the three materials, the high-tree 曱 _ containing the Wei body, the (four) _ uniformity is compared.

The above and other objects, features and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A flow chart showing the steps of the method for forming a thin film of the present invention. The number of particles produced by this method is small. The following examples are in particular supplemented with a schematic cross-sectional view of the reaction chamber of Figure 2 to enable a sufficient understanding of the present invention. Referring to FIG. 1 and FIG. 2, the reaction chamber 200 includes, for example, a cooling device 21, a jet head 220, a susceptor 230, and a heater 25A. The cooling device 21 is, for example, disposed on the inner wall of the reaction chamber 200 or disposed around the inner wall of the entire reaction chamber, and the cooling device 210 is provided with cooling water or other cooling fluid for cooling. The function, and for example, includes a conduit in which a cooling fluid flows in the interior wall of the reaction chamber. The air jet head 220 is, for example, a face plate having a plurality of air holes 22〇a. A heater 250 is disposed beneath the susceptor 230 to provide the energy required to generate a chemical reaction on the surface of the substrate 240. Of course, the reaction chamber 22 can also be equipped with other components, and for the sake of convenience of description, only the foregoing components are shown. In addition, it is worth mentioning that the reaction chamber 220 illustrated in FIG. 2 is a single wafer design, and the present invention can also be applied to a reaction chamber designed in batch type. The ruthenium-containing film of the embodiment of the present invention is formed by placing the substrate 24 in the reaction chamber 200 (step 11A), for example, by placing the substrate 24 on the susceptor 230 of the reaction chamber 200. The material of the substrate 240 is, for example, a germanium substrate, a germanium substrate on the insulating layer, a ceramic material, glass, plastic (such as polycarbonate (pc), polystyrene (ps)), tantalum carbide, single crystal material, quartz, and the like. Diamond 竣 (DLC), gallium arsenide and metal oxides. For example, a film layer or component (not shown) has been formed on the substrate 240. Then, a gas containing gas is introduced into the reaction chamber 22 to perform a chemical vapor deposition process to form a "film" on the substrate 240, wherein at least the temperature of the inner wall of the reaction chamber 220 is controlled to be lower than 5 〇〇c ( Step 12:) The gas containing the gas is dispersed to the surface of the substrate 24 via the air jet head 220, and the substrate 24 is heated by the heater 250 to the desired temperature, and the chemical reaction of the gas is cut. The temperature of the upper wall of the 22 例如 is controlled, for example, by the temperature of the cooling water in the cooling device no. The temperature of the cooling water (or other cooling flow 8.1304098 97-10-23 body) in the cooling device is controlled, for example. At less than 50X, the vehicle crossover is, for example, lower than 3. If the cold unit 210 side is disposed around the reaction chamber mo, the temperature of the cooling unit 210 can be controlled, and the upper, lower, and inner walls of the reaction chamber 22 can be controlled. The chemical vapor deposition process described above may be an atmospheric pressure chemical vapor deposition process (APCVD), a chemical vapor deposition process (LpcVD), a nozzle chemical vapor deposition process (PECVD), and a power-assisted process. Gas phase ^ process (PACVD) or high density plasma chemical vapor deposition process (HDpc =

But it is not limited to this. Of course, depending on the type of film, the type of chemical vapor deposition process used will vary. The ruthenium-containing gas introduced in the reaction chamber 200 is, for example, dioxane ethane, tridecyl propyl hydride or the like, and since such a sulphide-containing body can be dissociated at a lower temperature, it seems to lower the thermal budget of the process. The ruthenium-containing film formed by the invention may be a ruthenium oxide film (including brain, PSG, BPSG, FSG), a nitrogen-cut film, a nitrogen oxide film, a nitrogen-carbonized film, a multi-sand film and a metal film containing 11 such as a crane film. .

Therefore, the reaction chamber contains a type of ruthenium-containing film formed by the inclusion of a Wei body, and at least one of oxygen, ammonia, and fluoride is introduced into the reaction chamber. The temperature of the heater 25A disposed under the susceptor 23 is controlled, for example, between 5 〇 °C. Of course, the temperature of the heater 25 turns also depends on the type of film formed. Taking the ^(4) film as an example, it is, for example, 1 (10) and ammonia gas. Although the two buckles (four) can be dissociated at a lower temperature, the temperature can not be lowered due to the fact that the crucible can be dissociated at a high temperature, so the temperature of the crucible 1304098 97-10-23 250 cannot be lowered, and needs to be controlled, for example. When the temperature of the cooling device 210 is c, the current time is 10 = the current capacity / the 彳Γ 丝 丝 财 魏 魏 魏 22 22 22 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Wide and low, near the reaction chamber wall, the energy provided by the chopping gas, large; s reduce the probability of gas phase nucleation, so that not only can the production of large particles, but also improve the cleanliness of the reaction chamber. - In summary, the method for forming a dream-containing film according to the embodiment of the present invention uses a two-stone gas or a three-press gas to cut the source, and the shape is preferably 5 stone, and the reaction chamber is lowered. The temperature of the wall causes the temperature increase above the money head to decrease, reducing the energy that can be supplied to the helium-containing gas to improve the problem of the gas phase nucleation of the gas containing ruthenium. 'Reducing' grain formation:: Not only can read and make better uniformity, better quality, but also improve the reaction (4) material, reduce the cleaning frequency of the reaction chamber, and thus improve the process quality and reduce the manufacturing cost. 3 gamma has been disclosed above in the preferred embodiment, but it is not intended to limit the work of the art. Anyone who is familiar with the art can make some changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing the steps of a thin film according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 2 is a cross-sectional view showing a reaction chamber of an embodiment of the present invention. 1304098 97-10-23 [Description of main component symbols] 110, 120 · · Step 200 : Reaction chamber 210 : Cooling device 220 : Air jet head 220a : Air vent 230 : Base 240 : Base 250 : Heater

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Claims (1)

1304098 97-10-23 X. Application for a patent garden: 1. A method for forming a ruthenium-containing film, the method comprising: placing a substrate in a reaction chamber; and dreaming to introduce a helium-containing gas for performing - The chemical vapor deposition chamber is internally 33 to form the (four) film, wherein at least the temperature for controlling the reaction to the upper inner wall is substantially 3 〇〇c. -4:: Please = the method of forming the cut film described in item 1, - Μ 4 reading includes Ermeng Yi or San 7 secret. 3. As described in the middle of the Lilang Dijon item 4: == he _ temperature substance ^^ where control ==? = its + the yttrium; film Si: two items: the formation method of the yttrium-containing film Membrane, Nitrogen Carbide Film, Multi-Stone Film, Membrane Film, Magnesia Oxide Film, Nitrogen Oxide Thin Film, such as the patented film and the stone-containing metal film, among which the chemical gas is integrated into the method, in the compound At least one of them is a reactive gas.匕栝 匕栝 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨 氨And the temperature of the heater is between L. 8 · For example, the scope of patent application, wherein the chemical vapor deposition system, the formation method of the film containing (4), ^ pressure chemical vapor deposition process, a 12 • 1304098 97 -10-23 Low-pressure chemical vapor deposition process, a plasma-enhanced chemical vapor deposition process for high-density plasma chemical vapor deposition. King 5 9.- Method for reducing the number of particles, suitable for formation - containing hair In the film step, the film containing the stone is formed in the reaction chamber, and the gas is formed by a chemical vapor deposition process. The method comprises: dipping the temperature in the chemical vapor deposition process substantially It is 30 ° C. At least 1 〇 of the inner wall of the reaction chamber is controlled. The method for reducing the number of particles according to Item 9, wherein the ruthenium-containing gas comprises dioxane or trioxane. The method for reducing the number of particles described in claim 9 of the patent application, further includes controlling the reaction (4) the temperature of the other inner walls is substantially qing. Fagan 2 hits like Shen. The method for reducing the number of particles described in item 9 of the monthly patent range wherein the temperature of the reaction chamber is controlled to be f, = include: the reverse, and then the temperature of the device is substantially: Μ. . /匕 method, j: the number of particles reduced in item 9 of Zhongwei The material wins ==” cutting film, nitriding Lu gas oxidation ~ flavoring Xi Taosheng, polycrystalline stone film and stone-containing metal film, among them, including the number of particles reduced by ^Lifan (4) 9 The chemical gas phase: _ Cheng-low pressure chemical vapor deposition process] two-phase clothing system and - high-density money chemical gas material; *; 7_ chemical vapor process 13 1304098 97-10-23 V. Chinese abstract: A method for forming a film containing a stone, wherein the substrate is placed in a reaction chamber, and then a helium-containing gas is introduced into the reaction chamber to perform a chemical vapor deposition process, and a germanium-containing film is formed on the substrate, wherein at least The temperature of the inner wall of the reaction chamber is controlled to be substantially 30. (6: The invention is a silicon-containing film is described in a reaction chamber, and then a silicon-containing gas Is introduced in the reaction • chamber to perform a chemical vapor deposition process and form a silicon-containing film on the substrate, at at the the temperature of The top inner surface of the reaction chamber is controlled substantially at 30 ° C. VII. Designated representative map: Lu (1) The designated representative figure of this case is shown in Fig. 1. (2) The symbol of the symbol of the representative figure is simple: 110, 120 : Step 8. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: