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Priority claimed from US11/550,602external-prioritypatent/US20070178634A1/en
Application filed by Samsung Electronics Co LtdfiledCriticalSamsung Electronics Co Ltd
Publication of TW200731540ApublicationCriticalpatent/TW200731540A/en
CMOS semiconductor devices having dual work function metal gate structures that are formed using fabrication techniques that enable independent work function control for PMOS and NMOS device and which significantly reduce or otherwise eliminate impact on gate dielectric reliability.
TW096103481A2006-01-312007-01-31CMOS semiconductor devices having dual work function metal gate stacks
TW200731540A
(en)