TW200731525A - Pixel and CMOS image sensor including the same - Google Patents

Pixel and CMOS image sensor including the same

Info

Publication number
TW200731525A
TW200731525A TW095148818A TW95148818A TW200731525A TW 200731525 A TW200731525 A TW 200731525A TW 095148818 A TW095148818 A TW 095148818A TW 95148818 A TW95148818 A TW 95148818A TW 200731525 A TW200731525 A TW 200731525A
Authority
TW
Taiwan
Prior art keywords
diffusion region
floating diffusion
pixel
voltage
same
Prior art date
Application number
TW095148818A
Other languages
English (en)
Inventor
Yong-Jei Lee
Jung-Chak Ahn
Ju-Hyun Ko
Sung-In Hwang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200731525A publication Critical patent/TW200731525A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095148818A 2005-12-28 2006-12-25 Pixel and CMOS image sensor including the same TW200731525A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050131888A KR100660905B1 (ko) 2005-12-28 2005-12-28 Ｃｍｏｓ 이미지 센서

Publications (1)

Publication Number Publication Date
TW200731525A true TW200731525A (en) 2007-08-16

Family

ID=37815406

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095148818A TW200731525A (en) 2005-12-28 2006-12-25 Pixel and CMOS image sensor including the same

Country Status (3)

Country Link
US (1) US20070145447A1 (zh)
KR (1) KR100660905B1 (zh)
TW (1) TW200731525A (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4467542B2 (ja) * 2006-06-15 2010-05-26 日本テキサス・インスツルメンツ株式会社 固体撮像装置
US8896733B2 (en) * 2011-01-21 2014-11-25 Aptina Imaging Corporation Imaging system with automatic conversion gain selection
JP2014204364A (ja) * 2013-04-08 2014-10-27 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
US9277147B2 (en) 2013-08-23 2016-03-01 Semiconductor Components Industries, Llc Multimode pixel readout for enhanced dynamic range
US9456153B2 (en) * 2015-01-18 2016-09-27 Pixart Imaging (Penang) Sdn. Bhd. Pixel image non-uniformity compensation method based on capacitance trimming and image sensor having pixels with variable capacitors for non-uniformity compensation
TWI572023B (zh) * 2015-04-15 2017-02-21 力晶科技股份有限公司 Ｃｍｏｓ影像感測單元及其製造方法
US10347681B2 (en) * 2016-02-19 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Imaging device
KR102559953B1 (ko) 2016-06-13 2023-07-28 에스케이하이닉스 주식회사 플로팅 확산 영역의 전압 변동 리드아웃 장치 및 그 방법과 그를 이용한 씨모스 이미지 센서

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5952686A (en) * 1997-12-03 1999-09-14 Hewlett-Packard Company Salient integration mode active pixel sensor
US6046444A (en) * 1997-12-08 2000-04-04 Intel Corporation High sensitivity active pixel with electronic shutter
US7847847B2 (en) * 2005-01-27 2010-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for CMOS image sensor with a plurality of capacitors

Also Published As

Publication number Publication date
US20070145447A1 (en) 2007-06-28
KR100660905B1 (ko) 2006-12-26

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