TW200731466A - Dielectric film having ABOx-type perovskite crystalline structure, capacitor using the dielectric film, and method and system for forming dielectric film having ABOx-type perovskite crystalline structure - Google Patents

Dielectric film having ABOx-type perovskite crystalline structure, capacitor using the dielectric film, and method and system for forming dielectric film having ABOx-type perovskite crystalline structure

Info

Publication number
TW200731466A
TW200731466A TW095131219A TW95131219A TW200731466A TW 200731466 A TW200731466 A TW 200731466A TW 095131219 A TW095131219 A TW 095131219A TW 95131219 A TW95131219 A TW 95131219A TW 200731466 A TW200731466 A TW 200731466A
Authority
TW
Taiwan
Prior art keywords
dielectric film
abox
crystalline structure
type perovskite
perovskite crystalline
Prior art date
Application number
TW095131219A
Other languages
English (en)
Chinese (zh)
Inventor
Katsuya Okumura
Kinji Yamada
Tomotaka Shinoda
Dao-Hai Wang
Takahiro Kitano
Yoshiki Yamanishi
Muneo Harada
Tatsuzo Kawaguchi
Yoshihiro Hirota
Kenji Matsuda
Original Assignee
Tokyo Electron Ltd
Octec Inc
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Octec Inc, Ibiden Co Ltd filed Critical Tokyo Electron Ltd
Publication of TW200731466A publication Critical patent/TW200731466A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW095131219A 2005-08-24 2006-08-24 Dielectric film having ABOx-type perovskite crystalline structure, capacitor using the dielectric film, and method and system for forming dielectric film having ABOx-type perovskite crystalline structure TW200731466A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005243286 2005-08-24
JP2006221998A JP4912081B2 (ja) 2005-08-24 2006-08-16 ＡＢＯｘ型ペロブスカイト結晶構造を有する誘電体膜の形成方法

Publications (1)

Publication Number Publication Date
TW200731466A true TW200731466A (en) 2007-08-16

Family

ID=37771652

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131219A TW200731466A (en) 2005-08-24 2006-08-24 Dielectric film having ABOx-type perovskite crystalline structure, capacitor using the dielectric film, and method and system for forming dielectric film having ABOx-type perovskite crystalline structure

Country Status (3)

Country Link
JP (1) JP4912081B2 (ja)
TW (1) TW200731466A (ja)
WO (1) WO2007023909A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179357A (ja) * 2011-07-01 2014-09-25 Sanyo Electric Co Ltd 積層構造体及びその製造方法
JP6411721B2 (ja) * 2013-09-24 2018-10-24 イビデン株式会社 保持シール材の製造方法
US10115527B2 (en) * 2015-03-09 2018-10-30 Blackberry Limited Thin film dielectric stack
US10896950B2 (en) 2017-02-27 2021-01-19 Nxp Usa, Inc. Method and apparatus for a thin film dielectric stack
US10923286B2 (en) 2018-02-21 2021-02-16 Nxp Usa, Inc. Method and apparatus for compensating for high thermal expansion coefficient mismatch of a stacked device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3012785B2 (ja) * 1995-07-14 2000-02-28 松下電子工業株式会社 容量素子
JP3991537B2 (ja) * 1999-12-02 2007-10-17 セイコーエプソン株式会社 酸化物薄膜の製造方法
JP4257485B2 (ja) * 2000-06-21 2009-04-22 セイコーエプソン株式会社 セラミックス膜およびその製造方法ならびに半導体装置および圧電素子
JP2003282560A (ja) * 2002-03-26 2003-10-03 Seiko Epson Corp 強誘電体層およびその製造方法ならびに強誘電体キャパシタおよび圧電素子
JP2005213105A (ja) * 2004-01-30 2005-08-11 Matsushita Electric Ind Co Ltd 多結晶金属酸化物薄膜とその製造方法及び不揮発性メモリ

Also Published As

Publication number Publication date
JP2007088437A (ja) 2007-04-05
JP4912081B2 (ja) 2012-04-04
WO2007023909A1 (ja) 2007-03-01

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