TW200731389A - Cleaning agent and method of removing residue left after plasma process - Google Patents

Cleaning agent and method of removing residue left after plasma process

Info

Publication number
TW200731389A
TW200731389A TW095104507A TW95104507A TW200731389A TW 200731389 A TW200731389 A TW 200731389A TW 095104507 A TW095104507 A TW 095104507A TW 95104507 A TW95104507 A TW 95104507A TW 200731389 A TW200731389 A TW 200731389A
Authority
TW
Taiwan
Prior art keywords
cleaning agent
plasma process
residue left
removing residue
material layer
Prior art date
Application number
TW095104507A
Other languages
Chinese (zh)
Other versions
TWI315890B (en
Inventor
Cheng-Ming Weng
Miao-Chun Lin
Mei-Chi Wang
Jiunn-Hsiung Liao
Wei-Cheng Yang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW95104507A priority Critical patent/TWI315890B/en
Publication of TW200731389A publication Critical patent/TW200731389A/en
Application granted granted Critical
Publication of TWI315890B publication Critical patent/TWI315890B/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A method for removing residue left from plasma process. First, a substrate on which at least a material layer is formed is provided. The material layer includes a metal. Then, a fluorine-containing plasma is performed, and a residue including said metal is formed on the surface of the material layer. After that, a wet cleaning step is performed to remove the residue by using a cleaning agent which is composed of water, diluted hydrofluoric acid, and an acid solution.
TW95104507A 2006-02-10 2006-02-10 Cleaning agent and method of removing residue left after plasma process TWI315890B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95104507A TWI315890B (en) 2006-02-10 2006-02-10 Cleaning agent and method of removing residue left after plasma process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95104507A TWI315890B (en) 2006-02-10 2006-02-10 Cleaning agent and method of removing residue left after plasma process

Publications (2)

Publication Number Publication Date
TW200731389A true TW200731389A (en) 2007-08-16
TWI315890B TWI315890B (en) 2009-10-11

Family

ID=45073160

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95104507A TWI315890B (en) 2006-02-10 2006-02-10 Cleaning agent and method of removing residue left after plasma process

Country Status (1)

Country Link
TW (1) TWI315890B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603395B (en) * 2012-10-22 2017-10-21 Tokyo Electron Ltd Method of etching the copper layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603395B (en) * 2012-10-22 2017-10-21 Tokyo Electron Ltd Method of etching the copper layer

Also Published As

Publication number Publication date
TWI315890B (en) 2009-10-11

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