TW200731389A - Cleaning agent and method of removing residue left after plasma process - Google Patents
Cleaning agent and method of removing residue left after plasma processInfo
- Publication number
- TW200731389A TW200731389A TW095104507A TW95104507A TW200731389A TW 200731389 A TW200731389 A TW 200731389A TW 095104507 A TW095104507 A TW 095104507A TW 95104507 A TW95104507 A TW 95104507A TW 200731389 A TW200731389 A TW 200731389A
- Authority
- TW
- Taiwan
- Prior art keywords
- cleaning agent
- plasma process
- residue left
- removing residue
- material layer
- Prior art date
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A method for removing residue left from plasma process. First, a substrate on which at least a material layer is formed is provided. The material layer includes a metal. Then, a fluorine-containing plasma is performed, and a residue including said metal is formed on the surface of the material layer. After that, a wet cleaning step is performed to remove the residue by using a cleaning agent which is composed of water, diluted hydrofluoric acid, and an acid solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95104507A TWI315890B (en) | 2006-02-10 | 2006-02-10 | Cleaning agent and method of removing residue left after plasma process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95104507A TWI315890B (en) | 2006-02-10 | 2006-02-10 | Cleaning agent and method of removing residue left after plasma process |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200731389A true TW200731389A (en) | 2007-08-16 |
TWI315890B TWI315890B (en) | 2009-10-11 |
Family
ID=45073160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95104507A TWI315890B (en) | 2006-02-10 | 2006-02-10 | Cleaning agent and method of removing residue left after plasma process |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI315890B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI603395B (en) * | 2012-10-22 | 2017-10-21 | Tokyo Electron Ltd | Method of etching the copper layer |
-
2006
- 2006-02-10 TW TW95104507A patent/TWI315890B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI603395B (en) * | 2012-10-22 | 2017-10-21 | Tokyo Electron Ltd | Method of etching the copper layer |
Also Published As
Publication number | Publication date |
---|---|
TWI315890B (en) | 2009-10-11 |
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