TW200731018A - Method and apparatus for photoelectrochemical etching - Google Patents

Method and apparatus for photoelectrochemical etching

Info

Publication number
TW200731018A
TW200731018A TW095104123A TW95104123A TW200731018A TW 200731018 A TW200731018 A TW 200731018A TW 095104123 A TW095104123 A TW 095104123A TW 95104123 A TW95104123 A TW 95104123A TW 200731018 A TW200731018 A TW 200731018A
Authority
TW
Taiwan
Prior art keywords
etching
substrate
photoelectrochemical etching
photoelectrochemical
immerse
Prior art date
Application number
TW095104123A
Other languages
English (en)
Inventor
Jung-Min Hwang
Huey-Liang Hwang
Original Assignee
Univ Tsing Hua
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Tsing Hua filed Critical Univ Tsing Hua
Priority to TW095104123A priority Critical patent/TW200731018A/zh
Publication of TW200731018A publication Critical patent/TW200731018A/zh

Links

TW095104123A 2006-02-07 2006-02-07 Method and apparatus for photoelectrochemical etching TW200731018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095104123A TW200731018A (en) 2006-02-07 2006-02-07 Method and apparatus for photoelectrochemical etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095104123A TW200731018A (en) 2006-02-07 2006-02-07 Method and apparatus for photoelectrochemical etching

Publications (1)

Publication Number Publication Date
TW200731018A true TW200731018A (en) 2007-08-16

Family

ID=57913094

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104123A TW200731018A (en) 2006-02-07 2006-02-07 Method and apparatus for photoelectrochemical etching

Country Status (1)

Country Link
TW (1) TW200731018A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449099B (zh) * 2011-03-14 2014-08-11 Fujitsu Ltd 蝕刻方法、半導體裝置的製造方法及蝕刻裝置
TWI479552B (zh) * 2008-09-05 2015-04-01 Kinik Co 表面平滑處理方法
CN112490122A (zh) * 2020-12-18 2021-03-12 璨隆科技发展有限公司 一种金属辅助光化学的n型碳化硅蚀刻方法
CN112490121A (zh) * 2020-12-18 2021-03-12 璨隆科技发展有限公司 一种金属辅助电化学的p型/绝缘型碳化硅蚀刻方法
CN114496768A (zh) * 2022-04-01 2022-05-13 浙江大学杭州国际科创中心 一种纳米柱阵列的制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479552B (zh) * 2008-09-05 2015-04-01 Kinik Co 表面平滑處理方法
TWI449099B (zh) * 2011-03-14 2014-08-11 Fujitsu Ltd 蝕刻方法、半導體裝置的製造方法及蝕刻裝置
US10508343B2 (en) 2011-03-14 2019-12-17 Fujitsu Limited Etching method for manufacturing semiconductor device
CN112490122A (zh) * 2020-12-18 2021-03-12 璨隆科技发展有限公司 一种金属辅助光化学的n型碳化硅蚀刻方法
CN112490121A (zh) * 2020-12-18 2021-03-12 璨隆科技发展有限公司 一种金属辅助电化学的p型/绝缘型碳化硅蚀刻方法
CN114496768A (zh) * 2022-04-01 2022-05-13 浙江大学杭州国际科创中心 一种纳米柱阵列的制备方法

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