TW200730658A - Ion implanter with contaminant collecting surface - Google Patents

Ion implanter with contaminant collecting surface

Info

Publication number
TW200730658A
TW200730658A TW095140721A TW95140721A TW200730658A TW 200730658 A TW200730658 A TW 200730658A TW 095140721 A TW095140721 A TW 095140721A TW 95140721 A TW95140721 A TW 95140721A TW 200730658 A TW200730658 A TW 200730658A
Authority
TW
Taiwan
Prior art keywords
ion
ion implanter
collecting surface
liner
workpiece
Prior art date
Application number
TW095140721A
Other languages
English (en)
Other versions
TWI396765B (zh
Inventor
Philip J Ring
Michael Graf
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of TW200730658A publication Critical patent/TW200730658A/zh
Application granted granted Critical
Publication of TWI396765B publication Critical patent/TWI396765B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/028—Particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW095140721A 2005-11-10 2006-11-03 具有污染物收集表面的離子植入器 TWI396765B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/272,529 US7358508B2 (en) 2005-11-10 2005-11-10 Ion implanter with contaminant collecting surface

Publications (2)

Publication Number Publication Date
TW200730658A true TW200730658A (en) 2007-08-16
TWI396765B TWI396765B (zh) 2013-05-21

Family

ID=37945849

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095140721A TWI396765B (zh) 2005-11-10 2006-11-03 具有污染物收集表面的離子植入器

Country Status (7)

Country Link
US (1) US7358508B2 (zh)
EP (1) EP1946351A2 (zh)
JP (1) JP5212820B2 (zh)
KR (1) KR101494017B1 (zh)
CN (1) CN101305443B (zh)
TW (1) TWI396765B (zh)
WO (1) WO2007058925A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI643232B (zh) * 2013-06-27 2018-12-01 美商瓦里安半導體設備公司 基板處理系統及離子植入系統

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7462845B2 (en) * 2005-12-09 2008-12-09 International Business Machines Corporation Removable liners for charged particle beam systems
US20080164427A1 (en) * 2007-01-09 2008-07-10 Applied Materials, Inc. Ion implanters
US7872247B2 (en) * 2007-10-11 2011-01-18 Applied Materials, Inc. Ion beam guide tube
US7838849B2 (en) * 2007-10-24 2010-11-23 Applied Materials, Inc. Ion implanters
WO2009076155A2 (en) * 2007-12-07 2009-06-18 Varian Semiconductor Equipment Associates, Inc. Particle trap
US7807984B2 (en) * 2008-01-02 2010-10-05 Applied Materials, Inc. Ion implanters
US8669517B2 (en) * 2011-05-24 2014-03-11 Axcelis Technologies, Inc. Mass analysis variable exit aperture
US8963107B2 (en) 2012-01-12 2015-02-24 Axcelis Technologies, Inc. Beam line design to reduce energy contamination
CN105097460A (zh) * 2014-05-09 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种解决离子注入机路径污染的方法
US9903016B2 (en) 2014-10-23 2018-02-27 E/G Electro-Graph, Inc. Device having preformed triple junctions to maintain electrode conductivity and a method for making and using the device
US20180237906A1 (en) * 2015-08-22 2018-08-23 Novena Tec Inc. Process chamber shielding system and method
JP6813048B2 (ja) * 2019-03-27 2021-01-13 日新イオン機器株式会社 質量分離器
CN114334592A (zh) * 2020-09-30 2022-04-12 中国科学院微电子研究所 污染物粒子收集板以及离子注入装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560879A (en) * 1983-09-16 1985-12-24 Rca Corporation Method and apparatus for implantation of doubly-charged ions
US5656092A (en) 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
US5903009A (en) * 1997-09-08 1999-05-11 Eaton Corporation Biased and serrated extension tube for ion implanter electron shower
US5909031A (en) * 1997-09-08 1999-06-01 Eaton Corporation Ion implanter electron shower having enhanced secondary electron emission
WO1999014788A1 (en) * 1997-09-16 1999-03-25 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6576909B2 (en) 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
US6734439B2 (en) * 2001-10-25 2004-05-11 Allan Weed Wafer pedestal tilt mechanism and cooling system
JP2005150223A (ja) * 2003-11-12 2005-06-09 Seiko Epson Corp ドライエッチング装置及び半導体装置の製造方法、Ｓｉリング
US7019314B1 (en) * 2004-10-18 2006-03-28 Axcelis Technologies, Inc. Systems and methods for ion beam focusing
KR100684105B1 (ko) * 2005-07-22 2007-02-16 삼성전자주식회사 누설 이온 빔 감지용 디텍터를 구비하는 애널라이징 챔버및 이를 구비하는 질량분석기

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI643232B (zh) * 2013-06-27 2018-12-01 美商瓦里安半導體設備公司 基板處理系統及離子植入系統

Also Published As

Publication number Publication date
CN101305443B (zh) 2013-03-13
JP2009516332A (ja) 2009-04-16
KR20080069238A (ko) 2008-07-25
US20070102652A1 (en) 2007-05-10
US7358508B2 (en) 2008-04-15
EP1946351A2 (en) 2008-07-23
KR101494017B1 (ko) 2015-02-16
WO2007058925A3 (en) 2007-07-19
WO2007058925A2 (en) 2007-05-24
TWI396765B (zh) 2013-05-21
CN101305443A (zh) 2008-11-12
JP5212820B2 (ja) 2013-06-19

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