TW200727483A - Methods for fabricating a polysilicon layer and a thin film transistor - Google Patents

Methods for fabricating a polysilicon layer and a thin film transistor

Info

Publication number
TW200727483A
TW200727483A TW095100430A TW95100430A TW200727483A TW 200727483 A TW200727483 A TW 200727483A TW 095100430 A TW095100430 A TW 095100430A TW 95100430 A TW95100430 A TW 95100430A TW 200727483 A TW200727483 A TW 200727483A
Authority
TW
Taiwan
Prior art keywords
layer
amorphous silicon
substrate
fabricating
polysilicon layer
Prior art date
Application number
TW095100430A
Other languages
English (en)
Other versions
TWI293511B (en
Inventor
Yun-Pei Yang
Te-Hua Teng
Chih-Jen Shih
Chia-Chien Lu
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to TW095100430A priority Critical patent/TWI293511B/zh
Priority to US11/306,899 priority patent/US20070155135A1/en
Publication of TW200727483A publication Critical patent/TW200727483A/zh
Application granted granted Critical
Publication of TWI293511B publication Critical patent/TWI293511B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
TW095100430A 2006-01-05 2006-01-05 Methods for fabricating a polysilicon layer and a thin film transistor TWI293511B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW095100430A TWI293511B (en) 2006-01-05 2006-01-05 Methods for fabricating a polysilicon layer and a thin film transistor
US11/306,899 US20070155135A1 (en) 2006-01-05 2006-01-16 Method of fabricating a polysilicon layer and a thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095100430A TWI293511B (en) 2006-01-05 2006-01-05 Methods for fabricating a polysilicon layer and a thin film transistor

Publications (2)

Publication Number Publication Date
TW200727483A true TW200727483A (en) 2007-07-16
TWI293511B TWI293511B (en) 2008-02-11

Family

ID=38224999

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100430A TWI293511B (en) 2006-01-05 2006-01-05 Methods for fabricating a polysilicon layer and a thin film transistor

Country Status (2)

Country Link
US (1) US20070155135A1 (zh)
TW (1) TWI293511B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2019199601A1 (en) * 2018-04-12 2019-10-17 Mattson Technology, Inc. Low thermal budget annealing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3917205B2 (ja) * 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5025057B2 (ja) * 2001-05-10 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
TWI293511B (en) 2008-02-11
US20070155135A1 (en) 2007-07-05

Similar Documents

Publication Publication Date Title
TWI227913B (en) Method of fabricating polysilicon film by excimer laser crystallization process
GB2456712A (en) Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region
TW200744212A (en) Thin film transistor and fabrication method thereof
TW200746446A (en) Method for fabricating an inorganic nanocomposite
JP2009088501A5 (zh)
JP2009076753A5 (zh)
GB0901604D0 (en) method for producing a contact, a contact and solar cell comprising a contact
TW200746441A (en) Manufacturing method of thin film transistor and thin film transistor, and display
JP2008270780A5 (zh)
TW200951592A (en) Array substrate for liquid crystal display device and method of fabricating the same
TW200708870A (en) Manufacturing method of liquid crystal display
TW200725897A (en) Thin film transistor, device electrode thereof and method of formong the same
TW200627642A (en) Methods of manufacturing a thin film transistor and a display
TW200611414A (en) Semiconductor device and method of fabricating a LTPS film
TW200717713A (en) Advanced forming method and structure of a semiconductor device
SG138446A1 (en) Thin film transistor and method for manufacturing same
TW200727483A (en) Methods for fabricating a polysilicon layer and a thin film transistor
EP2741314A3 (en) Method of manufacturing a poly-crystalline silicon layer, method of manufacturing an organic light-emitting display apparatus including the same, and organic light-emitting display apparatus manufactured by using the same
TW200629425A (en) Semiconductor device manufacturing method
TW200725900A (en) A method for manufacturing a bottom substrate of a liquid crystal display device with three mask processes
TW200518196A (en) Method for crystallizing amorphous silicon film
TW200709352A (en) A method for forming a thin film transistor, and a method for transforming an amorphous layer into a poly crystal layer or a single crystal layer
JP2009049143A5 (zh)
TW200733393A (en) Pixel structure and thin film transistor and fabrication methods thereof
TW200744164A (en) Method for fabricating thin film transistor

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees