TW200727359A - Method and apparatus for controlling temperature of a substrate - Google Patents

Method and apparatus for controlling temperature of a substrate

Info

Publication number
TW200727359A
TW200727359A TW095107311A TW95107311A TW200727359A TW 200727359 A TW200727359 A TW 200727359A TW 095107311 A TW095107311 A TW 095107311A TW 95107311 A TW95107311 A TW 95107311A TW 200727359 A TW200727359 A TW 200727359A
Authority
TW
Taiwan
Prior art keywords
substrate
temperature
etching
substrate support
processing chamber
Prior art date
Application number
TW095107311A
Other languages
English (en)
Other versions
TWI323011B (en
Inventor
Thomas J Kropewnicki
Theodoros Panagopoulos
Nicolas Gani
Wilfred Pau
Mei-Hua Shen
John P Holland
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/246,012 external-priority patent/US8075729B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200727359A publication Critical patent/TW200727359A/zh
Application granted granted Critical
Publication of TWI323011B publication Critical patent/TWI323011B/zh

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW95107311A 2005-03-03 2006-03-03 Method for etching having a controlled distribution of process results TWI323011B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65869805P 2005-03-03 2005-03-03
US11/246,012 US8075729B2 (en) 2004-10-07 2005-10-07 Method and apparatus for controlling temperature of a substrate

Publications (2)

Publication Number Publication Date
TW200727359A true TW200727359A (en) 2007-07-16
TWI323011B TWI323011B (en) 2010-04-01

Family

ID=39129930

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95107311A TWI323011B (en) 2005-03-03 2006-03-03 Method for etching having a controlled distribution of process results

Country Status (3)

Country Link
JP (1) JP2008532324A (zh)
CN (1) CN101133682B (zh)
TW (1) TWI323011B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192664A (ja) 2010-03-11 2011-09-29 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
CN102386077B (zh) * 2010-09-03 2014-05-14 中芯国际集成电路制造(上海)有限公司 一种制作半导体器件的方法
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
CN112884302B (zh) * 2021-02-01 2024-01-30 杭州市电力设计院有限公司 一种电力物资管理方法
WO2024005047A1 (ja) * 2022-07-01 2024-01-04 東京エレクトロン株式会社 基板処理装置の制御方法及び基板処理システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4237317B2 (ja) * 1997-12-26 2009-03-11 株式会社日立製作所 プラズマ処理装置
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
JP2004247526A (ja) * 2003-02-14 2004-09-02 Hitachi High-Technologies Corp プラズマ処理装置及び方法

Also Published As

Publication number Publication date
JP2008532324A (ja) 2008-08-14
TWI323011B (en) 2010-04-01
CN101133682B (zh) 2011-07-20
CN101133682A (zh) 2008-02-27

Similar Documents

Publication Publication Date Title
TW200709278A (en) Method and apparatus to control semiconductor film deposition characteristics
TW200727359A (en) Method and apparatus for controlling temperature of a substrate
TW200943014A (en) Method of controlling semiconductor device fabrication
TW200741882A (en) Adaptive control method for rapid thermal processing of a substrate
TW200707556A (en) Methods and apparatus for adjusting ion implant parameters for improved process control
MX2017001740A (es) Metodo y sistema para el deposito localizado de metal sobre una superficie.
TW200610035A (en) Etch and deposition control for plasma implantation
TW200629400A (en) Iso/nested cascading trim control with model feedback updates
TW200802542A (en) Method and system for deposition tuning in an epitaxial film growth apparatus
WO2009155221A3 (en) Methods for controlling time scale of gas delivery into a processing chamber
TW200627513A (en) Control process, temperature control process, temperature regulator, heat treatment, program and recordable medium
WO2010062910A3 (en) Using optical metrology for feed back and feed forward process control
JP2007531054A5 (zh)
TW200629121A (en) ISO/nested control for soft mask processing
GB0207350D0 (en) Surface
SG171631A1 (en) A method for the manufacture of a coating
WO2005104217A3 (en) System and method for etching a mask
EP1944793A3 (en) Temperature measurement and control of wafer support in thermal processing chamber
TW200617201A (en) Formula-based run-to-run control
WO2009117565A3 (en) Method and apparatus of a substrate etching system and process
TW200739688A (en) Method for manufacturing epitaxial wafer and epitaxial wafer
WO2011085064A3 (en) N-channel flow ratio controller calibration
WO2005086204A3 (en) Modulating ion beam current
TW200943452A (en) Substrate processing apparatus and method of controlling substrate processing apparatus
WO2007035071A8 (en) Apparatus and method for treating substrate

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees