TW200723371A - Ion implantation method and device using thereof - Google Patents

Ion implantation method and device using thereof

Info

Publication number
TW200723371A
TW200723371A TW094143097A TW94143097A TW200723371A TW 200723371 A TW200723371 A TW 200723371A TW 094143097 A TW094143097 A TW 094143097A TW 94143097 A TW94143097 A TW 94143097A TW 200723371 A TW200723371 A TW 200723371A
Authority
TW
Taiwan
Prior art keywords
ion
ion implantation
cross
section
density distribution
Prior art date
Application number
TW094143097A
Other languages
Chinese (zh)
Other versions
TWI267910B (en
Inventor
Fu-Sheng Peng
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94143097A priority Critical patent/TWI267910B/en
Application granted granted Critical
Publication of TWI267910B publication Critical patent/TWI267910B/en
Publication of TW200723371A publication Critical patent/TW200723371A/en

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  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

An ion implantation method for forming an ion implantation area in a predetermined area of a substrate is provided. The method comprises the following steps. First, an ion beam is provided. Then, a first cross-section and a first ion density distribution of the ion beam are detected. Then, a second cross-section and a second ion density distribution of the ion beam along a predetermined scanning path of ion implantation are detected. Then, the predetermined scanning path of ion implantation is adjusted and optimized according to the first and second cross-section and the first and second ion density distribution. Thereafter, the ion beam is implanted along the optimized scanning path to form the ion implantation area in the predetermined area of the substrate.
TW94143097A 2005-12-07 2005-12-07 Ion implantation method and device using thereof TWI267910B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94143097A TWI267910B (en) 2005-12-07 2005-12-07 Ion implantation method and device using thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94143097A TWI267910B (en) 2005-12-07 2005-12-07 Ion implantation method and device using thereof

Publications (2)

Publication Number Publication Date
TWI267910B TWI267910B (en) 2006-12-01
TW200723371A true TW200723371A (en) 2007-06-16

Family

ID=38220487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94143097A TWI267910B (en) 2005-12-07 2005-12-07 Ion implantation method and device using thereof

Country Status (1)

Country Link
TW (1) TWI267910B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111146060B (en) * 2019-12-23 2022-04-01 上海集成电路研发中心有限公司 Adjusting device and adjusting method for high-energy ion implanter beam

Also Published As

Publication number Publication date
TWI267910B (en) 2006-12-01

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees